Multilevel read-only optical recording methods

The advantages of read-only storage is the predominance of optical recording relative to magnetic and other rewritable methods. Multilevel (ML) read-only technology has been a trend to improve the data capacity and transfer rate. Based on the principle and coding method of ML, this paper demonstrates some ML read-only recording methods, of which a new ML read-only recording is developed. This recording method integrates amplitude modulation achieved by the reaction mechanism of physics and chemistry of photoresist with the run-length-limited technology. The discs can be achieved using standard photoresist mastering and replication techniques with great compatibility to conventional binary read-only discs.     

相变光盘膜系计算和设计

本文提出一种计算相变型光盘膜系光学特性的方法.并以TeSbSe光记录介质为例,讨论了三层膜相变光盘的优化设计.     

Theoretical analysis of nanosecond crystallization kinetics of phase-change optical recording films

A theoretical investigation of nanosecond crystallization kinetics of the phase-change optical recording films is presented. An extended Kissinger equation for the square-root heating is derived, which properly describes the temperature evolution of the films by nanosecond laser heating. The extended Kissinger equation was used to explain our previous experimental results.     

多阶光存储原理分析及其读写系统前端信号处理研究

运用矢量衍射理论的计算方法(耦合波方法，时域有限差分法)，对两种多阶光存储方案(坑深调制，坑形调制)进行了原理性分析，并简略分析了利用相变材料的幅值调制实现多阶存储的原理.由此得出多阶光存储技术的实现是利用了光与物质之间的相互作用，使光对记录介质产生作用，同时介质也对光的某些特性进行调制，而这些特征的改变一般都不止两个状态0或1，用数字方式将这多个状态记录下来便实现了多阶数字存储.此外,还提出了多阶光盘前端信号处理系统的设计与开发.该系统是多阶光存储实验系统的重要组成部分，可输出RF,TE,FE等伺服与误差信号，并将信号反馈给多阶处理芯片；同时系统还可对光学头的激光读写功率及写入时间进行控制，并能使其实现自动调焦和道跟踪. 关键词： 多阶光存储 矢量衍射理论 时域有限差分法     

A study on the short—wavelength and high—numerical—aperture phase—change recording

In this paper, we discuss the phase-change recording at a short-wavelength (514nm) and a high numerical aperture (0.85). Effects of recording power and pulse width on the size of the recording marks are studied. The minimum recording mark with a length of approximately 220nm has been observed. The capacity of about 17GB for a single-layer disc of a 12cm diameter can be obtained. The maximum carrier-to-noise ratio reaches 45dB at a writing power of 13--14mW.     

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage

The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods, which constitute an insurmountable challenge for existing data centers. At present, computing devices use the von Neumann architecture with separate computing and memory units, which exposes the shortcomings of “memory bottleneck”. Nonvolatile memristor can realize data storage and in-memory computing at the same time and promises to overcome this bottleneck. Phase-change random access memory (PCRAM) is called one of the best solutions for next generation non-volatile memory. Due to its high speed, good data retention, high density, low power consumption, PCRAM has the broad commercial prospects in the in-memory computing application. In this review, the research progress of phase-change materials and device structures for PCRAM, as well as the most critical performances for a universal memory, such as speed, capacity, and power consumption, are reviewed. By comparing the advantages and disadvantages of phase-change optical disk and PCRAM, a new concept of optoelectronic hybrid storage based on phase-change material is proposed. Furthermore, its feasibility to replace existing memory technologies as a universal memory is also discussed as well.     

多阶光存储研究进展

多阶光存储是一种在不改变原有光路和机械系统的情况下,利用先进的信号处理与调制编码技术,显著提高存储容量和数据传输率的新型技术。综述了多阶光存储的发展历史及研究现状,并针对多阶光存储的两种类型(信号多阶和介质多阶),列举了几种典型的多阶光存储方案。从本质上分析了信号多阶技术和介质多阶技术的不同,展望了其发展方向。     

多阶光存储的调制原理分析与编码设计研究

根据编码理论的状态切分算法，提出一种新型的8阶(1,3)游程长度受限码，在最小记录符上能够存储3.0比特的用户数据，并且编码与译码逻辑简明，可用于未来高密度多阶游程长度调制光盘系统.     

基于纳米孔径激光器的近场光存储的最新发展

近几年发展起来的近场光学原理和方法为实现超高密度光学数据存储开辟了新的技术途径。基于近扬光学方法的最小信息记录单元尺寸突破了经典光学分辨率的衍射极限 ,理论存储密度高达 1 0 0 0Gb/平方英寸 ,受到了研究人员和工业界的广泛关注。着重介绍了用于近场光学存储的纳米孔径激光器的原理、结构、优点 ,对它的实现方法和发展状况作了详细的阐述 ,并对其在近场光存储领域未来的发展趋势进行了展望     

Polarization readout analysis for multilevel phase change recording by crystallization degree modulation

Four different states of Si15Sb85 and Ge2Sb2Te5 phase change memory thin films are obtained by crystallization degree modulation through laser initialization at different powers or annealing at different temperatures. The polarization characteristics of these two four-level phase change recording media are analyzed systematically. A simple and effective readout scheme is then proposed, and the readout signal is numerically simulated. The results show that a high-contrast polarization readout can be obtained in an extensive wavelength range for the four-level phase change recording media using common phase change materials. This study will help in-depth understanding of the physical mechanisms and provide technical approaches to multilevel phase change recording.     

TeSeIn相变记录薄膜及其可逆光存贮特性

本文报道了从理论和实验上对相变记录薄膜Te_x(In_ySe_(1-y))_(1-x)系统的研究结果.当记录薄膜TeSeIn的组成对应共晶区域(x=0.7,y=0.2～0.5)时,TeSeIn膜具有稳定的光致可逆相变循环过程,擦除时间10μs,读出信号对比度0.23,擦写循环次数达10~5以上.     

记录薄膜Te—In—Sb光学性质的研究

采用高频溅射方法制成Te-In-Sb系统的非晶态薄膜.系统的研究了不同组分薄膜的透射、反射谱,及其在结晶过程中的变化.用透射电镜研究了Te-In-Sb薄膜的结构和晶化过程.分析了组分对薄膜的吸收系数、介电常数、光学能隙等光学性质的影响.并由此综合评价了Te-In—Sb系统中比较适合作为光盘介质的组成.     

多阶光盘系统中帧同步信号的自适应检测

多阶光存储是提高光盘存储容量和数据传输率的重要途径。帧同步信号在多阶光盘的重放系统中起着很重要的作用。分析了实际多阶存储系统中帧同步信号的特征和信号检测的特点,提出了一种自适应检测帧同步码的方法。实验结果表明,该方法的精度可以满足系统的需求。     

Ultrashort-laser-pulse-driven rewritable phase-change optical recording in Sb-based films

This paper reviews the work we have carried out over the last years on the development of ultrashort-laser-pulse-driven, rewritable, phase-change optical memories. The materials we have tailored for this application are non-stoichiometric, Sb-rich amorphous thin films, which can be crystallized upon irradiation with ultrashort laser pulses, showing a large optical contrast upon transformation. This result makes them very promising for the development of rewritable phase-change optical memories under ultrashort pulses, since the reversibility of the process has also been demonstrated. Adequate control of the heat-flow conditions has allowed us to achieve a full transformation time faster than 400 ps for crystallization/amorphization using 30-ps pulses. The crystallization threshold fluence has been found to decrease upon irradiation with pulses shorter than 800 fs, thus suggesting the relevance of high-electronic-excitation-induced processes in the amorphous-to-crystalline phase transition. This has been confirmed by the observation of an ultrafast, non-thermal phase transition occurring 200–300 fs after the arrival of the laser pulse at the surface, for fluences above the crystallization threshold. The presence of this transient phase conditions the final state induced therefore enabling the applicability of this material as a rewritable recording medium using femtosecond pulses. Received: 11 October 2001 / Accepted: 9 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +34-91/564-5557, E-mail: J.Solis@io.cfmac.csic.es     

相变光存储研究的新进展

光存储朝着高密度、大容量、高数据传输速率、多功能方向发展。可擦重写相变光存储介质和技术吸引着越来越多研究者的兴趣。本文主要综述了相变光存储原理、材料性能改进和高密度相变存储技术方面的现状和新进展。     

相变光存储研究的新进展

光存储朝着高密度、大容量、高数据传输速率、多功能方向发展。可擦重写相变光存储介质和技术吸引着越来越多研究者的兴趣。本文主要综述了相变光存储原理、材料性能改进和高密度相变存储技术方面的现状和新进展     

Design of broadband achromatic metasurface device based on phase-change material Ge2Sb2Te5

Based on the phase-change material Ge₂Sb₂Te₅ (GST), achromatic metasurface optical device in the longer-infrared wavelength is designed. With the combination of the linear phase gradient GST nanopillar and the adjustment of the crystalline fraction m value of GST, the polarization insensitive achromic metalenses and beam deflector metasurface within the longer-infrared wavelength 9.5 μm to 13 μm are realized. The design results show that the achromatic metalenses can be focused on the same focal plane within the working waveband. The simulation calculation results show that the full-width at half-maximum (FWHM) of the focusing spot reaches the diffraction limit at each wavelength. In addition, the same method is also used to design a broadband achromatic beam deflector metasurface with the same deflection angle of 19°. The method proposed in this article not only provides new ideas for the design of achromatic metasurfaces, but also provides new possibilities for the integration of optical imaging, optical coding and other related optical systems.     

Surface plasmon polariton coupling between nano recording marks and their effect on optical read-out signal

We use the three-dimensional finite-difference time-domain method to investigate surface plasmon polariton coupling between two nano-recording marks which are of different shapes. The different coupling characteristics and the influence of these coupling effects on the read-out reflection signal will be discussed.     

Study on heat-storage and release characteristics of multi-cavity-structured phase-change microcapsules

Based on the solutions of apparent heat capacity method for phase-change problems, numerical simulations were performed to study the heat-storage and release processes for the multi-cavity-structured phase-change microcapsules in this paper. Moreover, the influence of the cavity structures of the phase-change microcapsules on the heat-storage and release capacity was analyzed. The results show that the rate of heat-storage and release will be accelerated by increasing the number of cavities in microcapsules, and cavity interlayer is the key factor to enhance the heat transfer.     

基于菌紫质F态的永久光存储研究

在线偏振飞秒激光激发下, 菌紫质通过双光子光化学反应可以生成具有永久光致各向异性的蓝移产物F₅₄₀态. 基于F₅₄₀态的永久光致各向异性, 通过调控飞秒激光空间光场分布, 可以在菌紫质薄膜中实现永久光信息存储. 本文使用纯相位型空间光调制器调制飞秒激光光场, 在物镜焦平面上生成光学点阵图案, 可以将信息快速记录在菌紫质薄膜中. 同时, 通过改变入射激光偏振方向, 可以实现偏振复用光存储, 这在高密度光存储和数据加密领域具有潜在应用.