金属有机分解法制备的SrTiO3薄膜的光学特性

采用金属有机分解法（MOD）在石英衬底上沉积了SrTiO3薄膜。所制备的薄膜是晶格常数为a=b=c=3.90?的多晶结构。通过测量190—1100nm波段内的透射光谱，采用包络方法计算了薄膜的光学常数（折射率n和消光系数k）。结果表明，采用MOD方法制备的薄膜的折射率大于采用射频磁控溅射、溶胶—凝胶和化学气相沉积方法制备的薄膜的折射率；薄膜的折射率色散关系满足单振子模型，其中振子强度S0为0.88′1014m-2，振子能量E0为6.40eV；薄膜的禁带宽度为3.68eV。     

钛酸锶钡薄膜的室温光学性能研究

采用溶胶-凝胶法制备了(Ba0.75Sr0.25)TiO3薄膜,研究了不同退火温度下样品的物相结构、薄膜的光致发光性能和光学透过率。结果表明:室温下非晶钛酸锶钡薄膜在蓝光激发下具有明显的发光现象,发光波长范围是500～650 nm,峰值在525 nm附近。延长非晶态薄膜的退火时间能够显著提高样品的发光强度,且发光强度随薄膜厚度增加而增大。晶态薄膜有微弱的发光现象。透射谱测试结果表明,钛酸锶钡薄膜在可见光范围内具有良好的光学透过率。     

杂质分布设计对钛酸锶钡薄膜结构和性能的影响

用溶胶-凝胶方法在Pt/Ti/SiO₂/Si衬底上制备了Na⁺的不同浓度均匀掺杂和成分梯度掺杂(上梯度)钛酸锶钡(Ba_0.25Sr_0.75TiO₃)薄膜.电性能测试表明随着均匀掺杂浓度的增加，薄膜介电常数和损耗都减小，而漏电流先减小(掺杂浓度小于2.5mol%时)后又逐渐增加.场发射扫描电镜分析表明，均匀掺杂浓度增加到2.5mol%后薄膜表面呈疏松多孔状结构，这可能是导致漏电流又逐渐增大的原因.Na⁺的上梯度掺杂避免了掺杂浓度增加到2.5mol%后薄膜生长过程中出现的孔洞现象，于是薄膜的综合电性能得到了进一步提高.深入、系统地分析了杂质不同分布方式对薄膜结构和性能有不同影响的原因.     

钛酸锶钡纳米管的制备及其红外吸收性能研究

首次采用溶胶凝胶法结合通孔阳极氧化铝模板, 成功制备出了钛酸锶钡纳米管. 该制备工艺简单、易实现而且成本低. 首先制备通孔阳极氧化铝模板和钛酸锶钡溶胶, 然后通过浸渍加上匀胶的方法将钛酸锶钡溶胶引入到通孔阳极氧化铝模板的纳米孔洞中, 最后在650℃下煅烧1 h形成钛酸锶钡纳米管. X射线衍射(XRD)证明, 制得的钛酸锶钡纳米管为立方钙钛矿相, 主要沿(110)晶向生长. 扫描电子显微镜(SEM)显示, 钛酸锶钡纳米管外径、内径和管长分别为75 nm, 50 nm, 16 μm. 傅里叶变换显微红外光谱仪(FTIR)测试结果表明在波数为1350-1650 cm^-1红外波段, 阳极氧化铝/钛酸锶钡纳米管复合结构较钛酸锶钡薄膜有两处明显的吸收峰, 吸收峰位于1470和1550 cm^-1处, 与通孔阳极氧化铝模板相比其吸收峰强度高出一倍, 最后分析了出现这一现象的可能原因.     

镀膜法改善有机薄膜太阳能电池光学性能

有机活性材料的低载流子迁移率使得有机光伏电池的电极收集到的电荷较少。增加活性层光吸收能够增加激子的产生数从而增加电极收集到的电荷,提升器件的性能。通过对器件模拟的方法,研究以P3HT：PCBM为活性层的薄膜太阳能电池的光学性能。 在此基础上,提出采用镀多层高反射膜的方法改善电池器件的光学性能。结果表明：活性层厚度对电池器件的光吸收起到主导作用;镀多层高反射膜在活性层厚度小于160 nm、Ag厚度小于20 nm时能大幅度改善电池器件的光学性能,光生激子总数随活性层厚度的增加而迅速增多,并且在活性层厚度约为150 nm时为一个最佳值。     

溅射制备非晶氮化镓薄膜的光学性能

采用直流磁控溅射方法在不同的氩气-氮气（Ar-N₂）气氛中制备了非晶氮化镓（a-GaN）薄膜. X射线衍射分析（XRD）和拉曼光谱（Raman）表明薄膜具有非晶结构. 通过椭偏光谱（SE）得到薄膜的折射率和厚度都随着氩气分量的增多而增大. 紫外—可见光谱（UV-Vis）的测量得到,当氩气分量R,即Ar/（Ar+N₂）,为0%时,薄膜的光学带隙为3.90eV,比晶体GaN （c-GaN） 的较大,这主要是由非晶结构中原子无序性造成的;而当R关键词： 非晶氮化镓 溅射 光学带隙 带尾态     

钛酸锶钡材料应用于超高密度动态随机存储器的研究

铁电钛酸锶钡材料具有十分优越的介电性能：高的介电常数,较低的介电损耗,好的绝缘漏电性能;而且,通过调节材料中的Ba/Sr成分比,可改变材料的居里相变温度TC,以满足特定应用环境的温度需要,在超高密度集成的动态随机存储器(DRAM)方面表现出广阔的应用前景.文章概括介绍了BaxSr1-xTiO3薄膜材料在DRAM应用中已取得的最新研究进展,并对这一应用所面临的问题也进行了详细讨论.     

钛酸锶钡材料应用于超高密度动态随机存储器的研究

铁电钛酸锶钡材料具有十分优越的介电性能 :高的介电常数 ,较低的介电损耗 ,好的绝缘漏电性能 ;而且 ,通过调节材料中的Ba/Sr成分比 ,可改变材料的居里相变温度TC,以满足特定应用环境的温度需要 ,在超高密度集成的动态随机存储器 (DRAM)方面表现出广阔的应用前景 .文章概括介绍了BaxSr1-xTiO3 薄膜材料在DRAM应用中已取得的最新研究进展 ,并对这一应用所面临的问题也进行了详细讨论     

氮化钛薄膜的光学性能分析

利用磁控溅射法，在不同的工艺条件下制备氮化钛薄膜。详细分析了不同工艺条件下薄膜的光谱选择特性以及相应的光学常数，通过俄歇电子能谱对薄膜的不同深度的元素成分进行了分析，由原子力显微镜测量并处理得到氮化钛薄膜的表面形貌图。结果表明，氮化钛薄膜的光学性能严格依赖于氮和钛原子数比，符合化学计量比的TiN薄膜具有良好的光谱选择性。基底加负偏压溅射可进一步改善薄膜的性能。     

火焰原子吸收法研究纳米钛酸锶钡粉体对铅的吸附性能

以氯化钡、氯化锶和四氯化钛为原料,以草酸作共沉淀剂,采用化学共沉淀法制备了纳米复盐吸附剂——钛酸锶钡粉体,并利用TEM,XRD和FTIR进行了表征。以火焰原子吸收为检测手段,详细考察了该纳米吸附剂对水中铅的吸附性能。结果表明：该法合成的钛酸锶钡粉体外形以棒状为主,平均粒径为36 nm,为纯净的钙钛矿纳米粉体。该纳米粉体对水中的铅具有较强的吸附能力,吸附量受介质的pH值影响较大,当pH值为6.0时,该吸附剂对水中铅的吸附容量可达13 mg·g-1。吸附于纳米钛酸锶钡上的铅可用0.5 mol·L-1的硝酸完全解脱。建立了纳米钛酸锶钡粉体吸附富集,火焰原子吸收法测定水中痕量铅的新方法,该法检出限为11 μg·L-1,相对标准偏差为2.6%。用于地表水中铅的测定,结果满意。     

Relaxor properties of Nb-modified (Ba0.8Sr0.2)TiO3 ceramics

Nb-doped (Ba_0.8Sr_0.2)TiO₃ ceramics were prepared using conventional mixed-oxide processing technique. Permittivity and loss factor were investigated as a function of temperature for various frequencies of the measuring field. The obtained results confirmed the relaxor ferroelectric behaviour of the studied ceramics, i.e. a strong frequency dispersion of the permittivity maximum and a visible shift of its temperature with frequency. Analysis of real part of permittivity allowed us to determine the value of the freezing temperature characterising the relaxor ferroelectrics. The physical processes, responsible for the relaxor behaviour of the studied ceramics are discussed.     

Structural,photoluminescent, and dielectric properties of Eu3+-doped Ba0.7Sr0.3TiO3 thin films

Eu³⁺-doped Ba_0.7Sr_0.3TiO₃ thin films were prepared by a chemical solution deposition method and characterized by X-ray diffraction, field emission scanning electron microscopy, photoluminescence and dielectric measurements. The thin films were well crystallized with a pure perovskite structure. A contraction of the unit cell was observed upon incorporation of Eu³⁺ ions below 2 mol%, while an expansion occurred as the Eu³⁺ concentration was further increased above 2 mol%, indicating that Eu³⁺ ions with different concentrations occupied different lattice sites. Photoluminescence spectra showed two prominent transitions of Eu³⁺ ions at 594 nm (⁵D₀ → ⁷F₁) and 618 nm (⁵D₀ → ⁷F₂) upon excitation at 395 nm (⁷F₀ → ⁵L₆). There existed two quenching concentrations at 2 mol% and 4 mol% due to different lattice sites of the Eu³⁺ ions. We also investigated the dielectric properties of the thin films. Our study suggests that Eu³⁺-doped Ba_0.7Sr_0.3TiO₃ thin films have potential applications in multifunctional optoelectronic devices.     

Investigation of the low-and infralow-frequency dielectric response of Ba0.7Sr0.3TiO3 thin films

The low-and infralow-frequency dielectric properties of Ba_0.7Sr_0.3TiO₃ thin films annealed at temperatures of 750 and 900°C are investigated over wide ranges of temperatures (from ?180 to +100°C), frequencies (from 0.1 Hz to 10.0 kHz), and amplitudes of the measuring electric field (from 15 to 255 kV/cm). The samples are found to undergo giant relaxation characteristic of layered heterogeneous structures. It is noted that, at a higher annealing temperature (900°C), the relaxation region is shifted toward lower temperatures (higher frequencies).     

溶胶-凝胶法制备(Ba0.7Sr0.3)TiO3/LaNiO3异质薄膜及其结构和介电性质研究

采用改进的溶胶-凝胶方法在单晶Si(100)衬底上制备了介电性能优异的(Ba0.7Sr0.3)TiO3/LaNiO3 异质薄膜.实验发现,在750 ℃下、O2气氛中晶化的LaNiO3薄膜的电阻率最小.C-V与I-V特性测量表明(Ba0.7Sr0.3)TiO3薄膜具有优异的介电性能,在频率为50 kHz、零偏压下的相对介电常数εr>300,偏压为6 V时漏电流密度JL<1.2×10-6 A/cm2.     

The optical properties of thin erbium films

The effective dielectric constant, ε′₂, of very thin films of erbium on sodium chloride substrates was determined from measurements of normal incidence reflectance and transmittance in the visible spectrum. ε′₂ showed a maximum which moved to longer wavelengths as the film thickness increased. Electron microscopy revealed that the film islands grew flatter and more irregular with thickness. The shape factor of the islands, F, was calculated by a modified Maxwell-Garnett method and became smaller as the film thickness increased.     

Structural and optoelectronic properties of amorphous GaN thin films

Amorphous gallium nitride (a-GaN) thin films were deposited on glass substrate by electron beam evaporation technique at room temperature and high vacuum using N ₂ as carrier gas. The structural properties of the films was studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). It was clear from XRD spectra and SEM study that the GaN thin films were amorphous. The absorbance, transmittance and reflectance spectra of these films were measured in the wavelength range of 300–2200 nm. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct band gap of E _g = 3:1 eV. The data analysis allowed the determination of the dispersive optical parameters by calculating the refractive index. The oscillator energy E ₀ and the dispersion energy E _d, which is a measure of the average strength of inter-band optical transition or the oscillator strength, were determined. Electrical conductivity of a-GaN was measured in a different range of temperatures. Then, activation energy of a-GaN thin films was calculated which equalled E _a = 0:434 eV.     

Excimer laser deposition of thin amorphous carbon films

A new carbon film deposition technique, based upon excimer laser vaporization of graphite in a flowing gas system has been developed. The low temperature vapor (LTV) technique alleviates high temperatures occurring in most other deposition methods. In this technique the UV laser ablation occurs in an inert flowing gas atmosphere. Atoms and molecules evaporated from graphite are cooled by gas entrainment before condensing on a substrate. The resulting films of amorphous carbon or hydrogenated amorphous carbon are free from strain. Measurement of the optical band gap of these films shows that E_g can be controlled by the hydrogen content of the carrier gas.     

In-plane structural order of domain engineered La0.7Sr0.3MnO3 thin films

We present a detailed structural study of tensile-strained La_0.7Sr_0.3MnO₃ thin films. We use the substrate miscut to control the number of rhombohedral variants in the films and study the in-plane order and structural distortions. Using high-resolution X-ray diffraction, we demonstrate that step-edge induced lattice modulations occur in 4-variant films, whereas periodic twinning is the dominant in-plane order for 2-variant films. We show that the in-plane twinning angle is almost completely relaxed. However, the relaxation of shear strain by the out-of-plane twinning angle and the monoclinic distortion is only partial. Furthermore, the film thickness dependence of the domain width reveals that domain formation is a universal mechanism for shear strain relaxation. Finally, we show that the structural response to the transition from the paramagnetic to the ferromagnetic phase of La_0.7Sr_0.3MnO₃ at 345?K is smaller in 4-variant films compared to 2-variant films.     

近距离升华沉积CdTe掺Cd薄膜的微结构和电学、光学特性

采用近距离升华技术制备了掺杂Cd元素的CdTe多晶薄膜.利用X射线衍射仪和扫描电子显微镜表征其微结构,用霍尔效应测试仪和紫外可见分光光度计分析其电学、光学特性.结果显示,适量的掺杂Cd元素可改善CdTe薄膜晶形,显著提高薄膜的电导特性,由弱的p型电导转变为导电性能良好的n型电导,但对光能隙影响不大. 关键词： 近距离升华 CdTe薄膜 掺杂Cd 电学和光学特性