Supersensitive electronic transition in impurity Nd-Nd nanoclusters in CaF<Subscript>2</Subscript> crystal

A comparison of the theoretical calculations with the results of experiments on high-resolution laser spectroscopy made it possible to reveal the fine structure that arises in the supersensitive ⁴I_9/2? ⁴G_5/2 transition as a result of a strong coherent interaction in the Nd³⁺ ion pair in the CaF₂ crystal and construct the level splitting diagram for the ground and excited states of impurity Nd-Nd nanoclusters.     

Phosphorescence of CaF<Subscript>2</Subscript>-Dy crystals

The decay kinetics of phosphorescence excited by x-rays in a CaF₂-Dy crystal is investigated. It is found that localized charge carriers recombine through tunneling. The conclusion is drawn that, in the initial stages of x-ray irradiation, the accumulation of charge carriers occurs in pairs. This process is caused by the formation of excimer-like molecular states during excitation of the crystal.     

Frequency conversion of CO laser radiation in the ZnGeP<Subscript>2</Subscript> nonlinear crystal

The experimental results of the study of CO laser frequency doubling in ZnGeP₂ and GaSe nonlinear crystals of high optical quality are presented. A multifrequency low-pressure Q-switched CO laser and a selective pulsed electroionization mode-locked CO laser with cryogenic cooling were used in the experiments. The highest external factor of radiation conversion into the second harmonic of the pulse-periodic Q-switched CO laser and pulsed mode-locked CO laser was 1% and 3.5%, respectively. Theoretical calculations showed the possibility of obtaining far IR and terahertz radiation using difference frequency generation of CO laser lines in these crystals.     

Comparative spectroscopic and laser properties of Yb<Superscript>3+</Superscript>-doped CaF<Subscript>2</Subscript>, SrF<Subscript>2</Subscript> and BaF<Subscript>2</Subscript> single crystals

We present the spectroscopic properties and room-temperature cw tunable laser operation of Yb³⁺-doped CaF₂, SrF₂ and BaF₂ single crystals grown and studied in the same conditions. Emission cross sections, lifetimes, laser thresholds, laser slope efficiencies and laser wavelength tuning ranges are compared. It appears that Yb³⁺-doped BaF₂ might be more promising for diode-pumped high power laser operation. PACS 42.55.Rz; 42.70.Hj     

Additive coloring of CaF<Subscript>2</Subscript> optical ceramic

The specificity of additive coloring of CaF₂ optical ceramic (formation of color centers in it and photothermochemical transformation of these centers in colored ceramic samples) has been considered. Under the same coloring conditions, this process occurs more slowly in ceramics rather than in crystals; at the same time, the limiting concentration of color centers that can be introduced into ceramics is much higher. The photothermochemical transformations of color centers in crystals and ceramics, which occur under illumination at different wavelengths and upon heating, have been studied. The specific features of introduction of color centers into ceramic and their transformation under illumination and heating are likely to be related to the mass twinning of ceramic grains.     

CW and tunable laser operation of Yb<Superscript>3+</Superscript> doped CaF<Subscript>2</Subscript>

We present the spectroscopic properties and room temperature of a cw tunable laser operation with Yb³⁺ doped CaF₂ single crystals grown in our laboratory. A laser slope efficiency of 50% with respect to the absorbed 920 nm pump power was obtained, and the laser wavelength could be tuned between 1000 and 1060 nm. PACS 42.55R; 42.70An erratum to this article can be found at     

Coplanar three-beam X-ray diffraction study in TeO<Subscript>2</Subscript> single crystal using synchrotron radiation

The results of the first experimental study of coplanar three-beam X-ray diffraction in a paratellurite (TeO₂) single crystal using synchrotron radiation on a Kurchatov synchrotron radiation source are presented. Four cases with (220, 371), (220, 464), (220, 370), and (110, 557) indices have been investigated. In all cases the change of the rocking curve shape of the weak reflection has been observed due to the multibeam interaction resulting in the appearance of two peaks in the reflection curve corresponding to two scattering mechanisms: amplitude and resonance. The origin of the insufficient resolution in the experiments has been considered. It has been shown that the obtained data correspond to the results of the computer simulation.     

Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF<Subscript>2</Subscript>/Si/CaF<Subscript>2</Subscript> structures

The results of analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF₂/Si(111) structures in a wide temperature range from 100 to 600°С are presented. It is shown that the preliminary formation of a 2D Si buffer layer provides the two-dimensional growth of CaF₂ layers. Possible reasons which for the disruption of 2D growth at high substrate temperatures are discussed.     

Stationary generation of diode-pumped self-Raman Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> composite crystal laser

Output power dependences of composite Nd³⁺:YVO₄ Raman laser stationary generation on the longitudinal diode pump power are measured at different transmissions of the output mirror at the Stokes radiation frequency. The deviation of the measured dependences from linear is explained by the influence of thermal effects on both the overlap of the beams and diffraction losses. A method to estimate the laser and Stokes losses in the cavity and the parameters characterizing the overlap of the laser radiation with the pump and Stokes beams is proposed. A Stokes-component of power 2.1 W is obtained and corresponds to 12% diode-to-Stokes efficiency.     

Laser spectroscopy of Eu<Superscript>3+</Superscript> cubic centers in the CaF<Subscript>2</Subscript> bulk single crystal

The optical transitions ⁵ D _{0, 1} → ⁷ F _J (J = 0, 1, ..., 6) of Eu³⁺ cubic centers in the CaF₂ single crystal are investigated using combined excitation and emission spectroscopy at different time delays after the excitation pulse. The energies of the Stark sublevels of the ⁷ F _J ground states are determined.     

Femtosecond laser pulse filamentation versus optical breakdown in H<Subscript>2</Subscript>O

The competition between femtosecond laser pulse induced optical breakdown and femtosecond laser pulse filamentation in condensed matter is studied both experimentally and numerically using water as an example. The coexistence of filamentation and breakdown is observed under tight focusing conditions. The development of the filamentation process from the creation of a single filament to the formation of many filaments at higher pulse energy is characterized systematically. In addition, strong deflection and modulation of the supercontinuum is observed. They manifest themselves at the beginning of the filamentation process, near the highly disordered plasma created by optical breakdown at the geometrical focus. Received: 9 July 2002 / Revised version: 15 November 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +1-418/6562-623, E-mail: wliu@phy.ulaval.ca     

Broad-band regenerative laser amplification in ytterbium-doped calcium fluoride (Yb:CaF<Subscript>2</Subscript>)

An output pulse energy of 17.3 mJ has been achieved with a diode-pumped Yb:CaF₂ regenerative laser amplifier. The bandwidth of the output pulse spectrum was 7.3 nm, being seeded with femtosecond pulses stretched to 2.2 ns. In cw operation a tuning range of 80 nm has been observed. A maximum pulse energy of 44 mJ at a repetition rate of 1 Hz has been obtained in Q-switched mode. The laser damage threshold of a Yb:CaF₂ crystal has been determined at a wavelength of 1064 nm and a pulse duration of 10 ns. PACS 42.55.Ah; 42.55.Xi; 42.70.Hj     

Nonlinear optical properties of Li<Subscript>2</Subscript>B<Subscript>4</Subscript>O<Subscript>7</Subscript> (LB4) crystal for the generation of tunable ultra-fast laser radiation by optical parametric amplification

Using a very simple and straightforward approach we derive the condition to be satisfied for achieving wavelength-insensitive broadband phase matching in a type-I noncollinear optical parametric amplifier (NOPA), required for the generation of ultra-fast laser radiation. Nonlinear optical properties of a relatively newly grown crystal Li₂B₄O₇ (LB4) have also been studied and we found that this crystal satisfies the condition required to realize the broadband phase matching and is suited for the generation of tunable visible–near-infrared ultra-fast laser radiation employed in a 395-nm-pumped type-I NOPA. The phase-matching bandwidths of type-I NOPAs in different borate-group crystals, such as BBO, CLBO, and KABO, are also numerically estimated. The values are 157, 164, 152, and 174 THz for 1-mm-thick BBO, CLBO, KABO, and LB4 crystals, with the noncollinear angles between the input pump and the signal beams 3.7°, 3.0°, 3.4°, and 2.9°, respectively, for the signal wavelengths centered at 630 nm. In addition to the largest bandwidth, LB4 crystal has several other attractive properties to be used in optical parametric applications, such as high laser damage threshold, wide optical transmission, easy crystal growth to excellent optical quality with large sizes, easy treatment of cutting and polishing, and nonhygroscopicity. PACS 42.65.Yj; 42.65.Re; 42.70.Mp     

Self-assembling of Ge quantum dots in the CaF<Subscript>2</Subscript>/Ge/CaF<Subscript>2</Subscript>/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis

A CaF₂/Ge/CaF₂/Si(111) heteroepitaxial structure with Ge quantum dots was grown by molecular-beam epitaxy. A negative differential conductivity and conductivity oscillations caused by resonant hole tunneling were observed at room temperature. The energy spacing between the levels in quantum dots, as determined from the oscillation period, is 40–50 meV depending on the Ge dot size.     

Effect of an electron beam on CaF<Subscript>2</Subscript> and BaF<Subscript>2</Subscript> epitaxial layers on Si

Atomically smooth CaF₂ and BaF₂ layers have been sequentially grown on Si(111) substrates by molecular beam epitaxy. Pore macrodefects have been revealed at the points of the action of an electron beam from a diffractometer when analyzing the crystal structure of the surface during the growth with the subsequent observation using atomic force microscopy. The formation of these macrodefects is associated with the decomposition of fluorides by high-energy electrons, which is accompanied by the desorption of fluorine and the drift current of positive ions from the electron charge drains.     

Al<Subscript>2</Subscript>O<Subscript>3</Subscript> plasma production during pulsed laser deposition

A Nd:YAG laser operating in second harmonic (532 nm), 3 ns pulse duration, 150 mJ pulse energy, and 10 Hz repetition rate, is employed to irradiate Al₂O₃ target placed in high vacuum. The produced plasma is investigated by an ion collector used in time-of-flight configuration and by a mass quadrupole spectrometer, in order to determine the equivalent plasma temperature and the atomic and molecular composition. Pulsed laser deposition technique has been used to produce thin films on different substrates placed close to the target. Different surface analyses, such as energy dispersive X-ray fluorescence (EDXRF), X-ray photoelectron spectroscopy (XPS) and surface profilometry are employed to characterize the produced films. Measurements of ablation yield, plasma equivalent temperature, acceleration voltage and characterization of grown thin films are presented and discussed.     

Spectral and generation properties of a new laser crystal (Cr<Superscript>3+</Superscript>,Li): Mg<Subscript>2</Subscript>SiO<Subscript>4</Subscript>

Based on the results of a comparative analysis of luminescence spectroscopy and EPR spectroscopy data, it was found for the first time that the wide-band luminescence of Cr³⁺ ions in a forsterite crystal is due to the Cr³⁺-V_Mg center or, in a crystal additionally doped with lithium, to a Cr³⁺-Li⁺ center. For the first time, tunable laser action was obtained with Cr³⁺-Li⁺ centers responsible for the wide-band luminescence.