Thermo-optic coefficients of monoclinic KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

The three thermo-optic coefficients of the biaxial laser host KLu(WO₄)₂ are measured at 633 nm by a deflection method. Their values at 300 K amount to ∂ n _g /∂ T=−7.4×10⁻⁶ K⁻¹; ∂ n _m /∂ T=−1.6×10⁻⁶ K⁻¹ and ∂ n _p /∂ T=−10.8×10⁻⁶ K⁻¹. Nearly athermal propagation directions are found for polarizations along the N _m and N _p dielectric axes.     

Optical absorption in layered MnGaInS<Subscript>4</Subscript> single crystals

Optical absorption in MnGaInS₄ single crystals has been studied. Direct and indirect optical transitions are found to occur in the range of photon energies of 2.37–2.74 eV and in the temperature range of 83–270 K. The temperature dependence of the band gap has been determined; its temperature coefficients E _gd and E _gi are −5.06 × 10⁻⁴ and −5.35 × 10⁻⁴ eV/K, respectively. MnGaInS4 single crystals exhibit anisotropy in polarized light at the absorption edge; the nature of this anisotropy is explained.     

The dependence of the Fe <Emphasis Type="Italic">K</Emphasis><Subscript><Emphasis Type="BoldItalic">α</Emphasis></Subscript> yield on the chirp of the femtosecond exciting laser pulse

The hard X-ray yield generated with femtosecond laser pulses is studied for differently chirped irradiating laser pulses. The radiation of a Ti:sapphire CPA laser system (29 fs, 750 μJ, 1 kHz) is focused onto an iron containing solid state target producing incoherent hard X-ray radiation, Bremsstrahlung as well as target-specific K_α and K_β lines. The hard X-ray yield has been optimized by introducing negative and positive group delay dispersion (GDD) and third order dispersion (TOD) to the femtosecond laser pulse. The K_α yield could be enhanced by a factor of 1.7 and reached 1.9×10⁸ Fe K_α photons/s in 4π with the laser pulse positively chirped, and 1.5×10⁸ Fe K_α photons/s with the pulse negatively chirped. When the pulse energy is lowered to about 400 μJ the yield maximum at negative chirp vanishes and only the maximum at positive chirp remains. We explain this behavior with an increased electron temperature caused by the induced GDD and TOD in the pulse. PACS 42.65.Re; 52.38.Ph; 52.50.Jm     

Microstructure of Cu<Subscript>60</Subscript>Zr<Subscript>20</Subscript>Ti<Subscript>20</Subscript> bulk metallic glass rolled at different strain rates

The structural evolution of Cu₆₀Zr₂₀Ti₂₀ bulk metallic glass during rolling at different strain rates and cryogenic temperature was investigated by X-ray diffraction (XRD), differential scanning calorimetry (DSC) and high-resolution transmission electron microscopy (HRTEM). It is revealed that the deformation-induced transformation is strongly dependent on the strain rate. At the lowest experimental strain rate of 1.0×10⁻⁴ s⁻¹, no phase transformation occurs until the highest deformation degree reaches 95%. In a strain rate range of 5.0×10⁻⁴−5.0×10⁻² s⁻¹, phase separation occurs in a high deformation degree. As the strain rate reaches 5.0×10⁻¹ s⁻¹, phase separation and nanocrystallization concur. The critical deformation degree for occurrence of phase transformation decreases with the strain rate increasing. Supported by the National Natural Science Foundation of China (Grant No. 50471016)     

Solid polymeric electrolyte of PVC–ENR–LiClO<Subscript>4</Subscript>

The ionic conductivity of PVC–ENR–LiClO₄ (PVC, polyvinyl chloride; ENR, epoxidized natural rubber) as a function of LiClO₄ concentration, ENR concentration, temperature, and radiation dose of electron beam cross-linking has been studied. The electrolyte samples were prepared by solution casting technique. Their ionic conductivities were measured using the impedance spectroscopy technique. It was observed that the relationship between the concentration of salt, as well as temperature, and conductivity were linear. The electrolyte conductivity increases with ENR concentration. This relationship was discussed using the number of charge carrier theory. The conductivity–temperature behaviour of the electrolyte is Arrhenian. The conductivity also varies with the radiation dose of the electron beam cross-linking. The highest room temperature conductivity of the electrolyte of 8.5 × 10⁻⁷ S/cm was obtained at 30% by weight of LiClO₄. The activation energy, E _a and pre-exponential factor, σ _o, are 1.4 × 10⁻² eV and 1.5 × 10⁻¹¹ S/cm, respectively.     

Direct calculation of transition intensities in LiYF<Subscript>4</Subscript>: Nd<Superscript>3+</Superscript>

Duan’s simple model is extended to analyze the mixing of the 4f ^{N − 1}5d configuration with the 4f ^N states. The explicit static coupling and traditional dynamic coupling are considered, and the parameters are fitted according to the absorption spectrum in LiYF₄: Nd³⁺. The parameter values obtained are as follows: T ₃₂ = −28i × 10⁻⁷, T ₅₂ = −1151i × 10⁻⁷, A ₃₂² = 192i × 10⁻¹² cm, A ₅₂⁴ = i × 10⁻¹² cm, A ₇₂⁶ = 54i × 10⁻¹² cm, and A ₇₆⁶ = −680i × 10⁻¹² cm. Compared to the experimental measurements, the present model yields better results than those obtained from the Judd-Ofelt theory. The text was submitted by the authors in English.     

Spectroscopic properties of Nd<Superscript>3+</Superscript>:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> crystal

The absorption spectra, fluorescence spectrum and fluorescence decay curve of Nd³⁺ ions in CaNb₂O₆ crystal were measured at room temperature. The peak absorption cross section was calculated to be 6.202×10⁻²⁰ cm² with a broad FWHM of 7 nm at 808 nm for E//a light polarization. The spectroscopic parameters of Nd³⁺ ions in CaNb₂O₆ crystal have been investigated based on Judd-Ofelt theory. The parameters of the line strengths Ω _t are Ω ₂=5.321×10⁻²⁰ cm²,Ω ₄=1.734×10⁻²⁰ cm²,Ω ₆=2.889×10⁻²⁰ cm². The radiative lifetime, the fluorescence lifetime and the quantum efficiency are 167 μs, 152 μs and 91%, respectively. The fluorescence branch ratios are calculated to be β ₁=36.03%,β ₂=52.29%,β ₃=11.15%,β ₄=0.533%. The emission cross section at 1062 nm is 9.87×10⁻²⁰ cm².     

Large optical nonlinearity in CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> thin films

CaCu₃Ti₄O₁₂ (CCTO) thin films were successfully prepared on LaAlO₃ substrates by pulsed laser deposition technique. We measured the nonlinear optical susceptibility of the thin films using Z-scan method at a wavelength of 532 nm with pulse durations of 25 ps and 7 ns. The large values of the third-order nonlinear optical susceptibility, χ ⁽³⁾, of the CCTO film were obtained to be 2.79×10⁻⁸ esu and 3.30×10⁻⁶ esu in picosecond and nanosecond time regimes, respectively, which are among the best results of some representative nonlinear optical materials. The origin of optical nonlinearity of CCTO films was discussed. The results indicate that the CCTO films on LaAlO₃ substrates are promising candidate materials for applications in nonlinear optical devices.     

Structure,thermal properties,conductivity and electrochemical stability of di-urethanesil hybrids doped with LiCF<Subscript>3</Subscript>SO<Subscript>3</Subscript>

Variable chain length di-urethane cross-linked poly(oxyethylene) (POE)/siloxane hybrid networks were prepared by application of a sol-gel strategy. These materials, designated as di-urethanesils (represented as d-Ut(Y′), where Y′ indicates the average molecular weight of the polymer segment), were doped with lithium triflate (LiCF₃SO₃). The two host hybrid matrices used, d-Ut(300) and d-Ut(600), incorporate POE chains with approximately 6 and 13 (OCH₂CH₂) repeat units, respectively. All the samples studied, with compositions ∞ > n ≥ 1 (where n is the molar ratio of (OCH₂CH₂) repeat units per Li⁺), are entirely amorphous. The di-urethanesils are thermally stable up to at least 200 °C. At room temperature the conductivity maxima of the d-Ut(300)- and d-Ut(600)-based di-urethanesil families are located at n = 1 (approximately 2.0 × 10⁻⁶ and 7.4 × 10⁻⁵ Scm⁻¹, respectively). At about 100 °C, both these samples also exhibit the highest conductivity of the two electrolyte systems (approximately 1.6 × 10⁻⁴ and 1.0 × 10⁻³ Scm⁻¹, respectively). The d-Ut(600)-based xerogel with n = 1 displays excellent redox stability.     

Near IR laser light visualizators using nonlinear GaSe and other layered crystallites

Two methods of preparation of the devices for visualization of pulsed and continuous near-IR (near infrared) are described and the results of conversion of pulsed and continuous IR (800–1360 nm) laser radiation into the visible range of spectra (400–680 nm) by using a transparent substrate covered with the particles (including nanoparticles) of effective nonlinear materials of GaSe _x S_{1 − x} (0.2 ≤ x ≤ 0.8) are presented. Converted light can be detected in transmission or reflection geometry as a visible spot corresponding to the real size of the incident laser beam. Developed device structures can be used for checking if the laser is working or not, for optical adjustment, for visualization of distribution of laser radiation over the cross of the beam and for investigation of the content of the laser radiation. Low energy (power density) limit for visualization of the IR laser pulses with 2–3 ps duration for these device structures are: between 4.6–2.1 μJ (3 × 10⁻⁴−1 × 10⁻⁴ W/cm²) at 1200 nm; between 8.4–2.6 μJ (4.7 × 10⁻⁴−1.5 × 10⁻⁴ W/cm²) at 1300 nm; between 14.4–8.1 μJ (8.2 × 10⁻⁴–4.6 × 10⁻⁴ W/cm²) at 1360 nm. Threshold damage density is more than 10 MW/cm² at λ = 1060 nm, pulse duration τ = 35 ps. The results are compared with commercially existing laser light visualizators.     

X-ray spectra induced by <Superscript>129</Superscript>Xe<Superscript><Emphasis Type="Italic">q</Emphasis>+</Superscript> impacting the metal surface

Using the slow highly charged ions ¹²⁹Xe ^q+ (q = 25, 26, 27; initial kinetic T ₀⩽4.65 keV/a.u.) to impact Au surface, the Au atomic Mα characteristic X-ray spectrum is induced. The result shows that as long as the charge state of projectile is high enough, the heavy atomic characteristic X-ray can be effectively excited even though the incident beam is very weak (nA magnitude), and the X-ray yield per ion is in the order of 10⁻⁸ and increases with the kinetic energy and potential energy of projectile. By measuring the Au Mα-X-ray spectra, Au atomic N-level lifetime is estimated at about 1.33×10⁻¹⁸ s based on Heisenberg uncertainty relation. Supported by the National Natural Science Foundation of China (Grant Nos. 10574132, 10274088 and 10405025), the Talent Introduction Project of Xianyang Normal University (Grant No. 05XSYK103) and the Education Commission Foundation of Shaanxi Province (Grant No. 04JK300)     

Effect of ionizing irradiation on the mechanism of current passage in TlInSe<Subscript>2</Subscript> single crystals

The temperature dependence of the electrical conductivity and current-voltage characteristics of γ-irradiated TlInSe₂ single crystals with an electrical resistivity of ∼10⁸ Ω cm have been investigated. It has been established that the anomalies of the conductivity observed in weak electric fields and at low dozes of irradiation are related to the decomposition of neutral complexes containing an interstitial cation atom. In strong electric fields, a thermal-field ionization of traps occurs. The main mechanism of radiation defect formation is the formation of complexes [V _In⁻In _i ⁺], [V _Se⁻Se _i ⁻], and others with the structural defects characteristic of unirradiated crystals. The activation energy, trap concentrations, and the potential well shape near the traps have been determined.     

Crystal growth,electrical and photophysical properties of Tl<Subscript>2</Subscript>S layered single crystals

The Tl₂S compound was prepared in a single crystal form using a special local technique, and the obtained crystals were analysed by X-ray diffraction. For the resultant crystals, the electrical properties (electrical conductivity and Hall effect) and steady-state photoconductivity were elucidated in this work. The electrical measurements extend from 170 to 430 K, where it was found that σ _⊥ = 8.82 × 10⁻⁵ Sm⁻¹ when current flow direction makes right angle to the cleavage plane of the crystals. In the same range of temperatures, it was found that σ _‖ = 4.73 × 10⁻⁵ Sm⁻¹ when the current flow is parallel to the cleavage plane. In line with the investigated range of temperatures, the widths of the band gaps were calculated and discussed as also the results of the electrical conductivity and Hall effect measurements. In addition, the anisotropy of the electrical conductivity (σ _⊥/σ _‖) for the obtained crystals was also studied in this work. Finally the photosensitivity was calculated for different levels of illumination as a result of the photoconductivity measurements, which showed that the recombination process in Tl₂S single crystals is a monomolecular process.      

Effect of ZnO nanoparticles filler concentration on the properties of PEO-ENR50-LiCF<Subscript>3</Subscript>SO<Subscript>3</Subscript> solid polymeric electrolyte

A solid polymer electrolyte comprising blend of poly(ethylene oxide) and 50% epoxidized natural rubber (ENR50) as a polymer host, LiCF₃SO₃ as a salt and nanoparticle ZnO as an inorganic filler was prepared by solution-casting technique. The effect of filler on the electrolyte properties was characterized and analysed. FESEM analysis showed that the filler was well distributed in the polymer matrix, while the effective interaction between the salt and the polymer host was reduced by the addition of filler. As evidenced by FTIR analysis, which showed the formation of triplet peak at C-O-C stretching region. Ionic conductivity was found to decrease from 1.4 × 10⁻⁴ Scm⁻¹ to 2.5 × 10⁻⁶ Scm⁻¹ upon the addition of filler, due to the blocking effect of filler into the electrolyte conduction pathways. The temperature dependence on the electrolyte conductivity obeys Arrhenius rule in two temperature regions.     

Table-top kHz hard X-ray source with ultrashort pulse duration for time-resolved X-ray diffraction

The interaction of ultrashort laser pulses with solid state targets is studied concerning the production of short X-ray pulses with photon energies up to about 10 keV. The influence of various parameters such as pulse energy, repetition rate of the laser system, focusing conditions, the application of prepulses, and the chirp of the laser pulses on the efficiency of this highly nonlinear process is examined. In order to increase the X-ray flux, the laser pulse energy is increased by a 2nd multipass amplifier from 750 μJ to 5 mJ. By applying up to 4 mJ of the pulse energy a X-ray flux of 4×10¹⁰ Fe K _α photons/s or 2.75×10¹⁰ Cu K _α photons/s are generated. The energy conversion efficiency is therefore calculated to η _Fe≈1.4×10⁻⁵ and η _Cu≈1.0×10⁻⁵. The X-ray source size is determined to 15×25 μm². By focusing the produced X-rays using a toroidally bent crystal a quasi-monochromatic X-ray point source with a diameter of 56 μm×70μm is produced containing ≈10⁴ Fe K _α1 photons/s which permits the investigation of lattice dynamics on a picosecond or even sub-picosecond time scale. The lattice movement of a GaAs(111) crystal is shown as a typical application.     

Crystal growth,spectroscopic characterization and laser performance of Nd:Lu<Subscript>0.33</Subscript>Y<Subscript>0.36</Subscript>Gd<Subscript>0.3</Subscript>VO<Subscript>4</Subscript> crystal

A new three-matrix mixed vanadate crystal Nd:Lu_0.33Y_0.36Gd_0.3VO₄ (Nd:LuYGdVO₄) crystal was grown by the Czochralski method. Room temperature absorption and fluorescence spectra of the Nd:LuYGdVO₄ crystals were measured and the spectroscopic parameters were calculated by the Judd-Ofelt theory. The intensity parameters of the Nd:LuYGdVO₄ crystal were Ω₂ = 9.736 × 10⁻²⁰ cm², Ω₄ = 4.179 × 10⁻²⁰ cm², Ω₆ = 8.020 × 10⁻²⁰ cm² and the stimulate emission cross section was 5.3 × 10⁻¹⁹ cm². Diodepumped actively Q-switched and passively Q-switched Nd:LuYGdVO₄ and Nd:Lu_0.14Y_0.86VO₄ lasers at 1.06 μm were demonstrated. The results indicate that, for both actively and passively Q-switched lasers, the Nd:LuYGdVO₄ lasers can generate shorter pulse width with higher peak power than the Nd:Lu_0.14Y_0.86VO₄ lasers at the same cavity conditions.     

Optical spectra and excited state relaxation dynamics of Sm<Superscript>3+</Superscript> in Gd<Subscript>2</Subscript>SiO<Subscript>5</Subscript> single crystal

Single crystals of gadolinium orthosilicate Gd₂SiO₅ containing 0.5 at% and 5 at% of Sm³⁺ were grown by the Czochralski method. Optical absorption spectra, luminescence spectra and luminescence decay curves were recorded for these systems at 10 K and at room temperature. Comparison of optical spectra recorded in polarized light revealed that the anisotropy of this optically biaxial host affects the intensity distribution within absorption and emission bands related to transitions between multiplets rather than the overall band intensity. It has been found that among four bands of luminescence related to the ⁴G_5/2→⁶H_J (J=5/2–11/2) transitions of Sm³⁺ in the visible and near infrared region the ⁴G_5/2 →⁶H_7/2 one has the highest intensity with a peak emission cross section of 3.54×10⁻²¹ cm² at 601 nm for light polarized parallel to the crystallographic axis c of the crystal. The luminescence decay curve recorded for Gd₂SiO₅:0.5 at% Sm³⁺ follows a single exponential time dependence with a lifetime 1.74 ms, in good agreement with the ⁴G_5/2 radiative lifetime τ _rad=1.78 ms calculated in the framework of Judd-Ofelt theory. Considerably faster and non-exponential luminescence decay recorded for Gd₂SiO₅:5 at% Sm³⁺ sample was fitted to that predicted by the Inokuti-Hirayama theory yielding the microparameter of Sm³⁺–Sm³⁺ energy transfer C _da=1.264×10⁻⁵² cm⁶×s⁻¹.     

Possible manifestation of spin fluctuations in the temperature behavior of the resistivity of Sm<Subscript>1.85</Subscript>Ce<Subscript>0.15</Subscript>CuO<Subscript>4</Subscript> thin films

A pronounced step-like (kink) behavior in the temperature dependence of resistivity ρ(T) is observed in the optimally doped Sm_1.85Ce_0.15CuO₄ thin films around T _sf = 87 K and attributed to the manifestation of strong-spin fluctuations induced by Sm³⁺ moments with the energy ħω_sf = k _B T _sf ≃ 7 meV. The experimental data are found to be well fitted by the residual (zero-temperature) ρ_res, electron-phonon ρ_e-ph(T) = AT, and electron-electron ρ_e-e(T) = BT ² contributions in addition to the fluctuation-induced contribution ρ_sf(T) due to thermal broadening effects (of the width ω_sf). According to the best fit, the plasmon frequency, impurity scattering rate, electron-phonon coupling constant, and Fermi energy are estimated as ω_p = 2.1 meV, τ ₀ ⁻¹ = 9.5 × 10⁻¹⁴ s⁻¹, λ = 1.2, and E _F = 0.2 eV, respectively. The text was submitted by the authors in English.     

Effect of gamma irradiation on the dielectric properties and electrical conductivity of the TlInS<Subscript>2</Subscript> single crystal

The effect of gamma irradiation on the dielectric properties and ac conductivity of a TlInS₂ single crystal with a layered structure has been investigated in the frequency range from 5 × 10⁴ to 3.5 × 10⁷Hz. It has been shown that gamma irradiation of the TlInS₂ single crystal with a dose of 10⁴–2.25 × 10⁶ rad leads to a considerable increase in the dielectric loss tangent tanδ, the real part ɛ′ and imaginary part ɛ″ of the complex permittivity, and the ac conductivity σ _ac across the layers. It has been established that, for all gamma irradiation doses, the TlInS₂ single crystal is characterized by the dielectric loss due to electrical conduction up to a frequency of 10⁷ Hz and by the relaxation loss at a higher frequency. Irradiation of the TlInS₂ single crystal results in an increase in the dispersion of tan δ, ɛ′, and ɛ″. It has been demonstrated that, as the gamma irradiation dose is accumulated in the TlInS₂ single crystal, the density of localized states near the Fermi level N _F increases (from 5.2 × 10¹⁸ to 1.9 × 10¹⁹ eV⁻¹ cm⁻³).     

Thulium doped monoclinic KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript> single crystals: growth and spectroscopy

This paper presents the crystal growth and optical characterization of thulium-doped KLu(WO₄)₂ (KLuW). Thulium-doped KLuW macrodefect-free monoclinic single crystals (a^*×b×c≈10×7×15 mm³) were grown by the top seeded solution growth slow cooling method with dopant concentrations of 0.5%, 1%, 3% and 5% atomic in solution. The evolution of unit cell parameters in relation with thulium doping was studied by X-ray powder patterns. Thulium energy levels in the KLuW host were determined by 6 K polarized optical absorption. The Judd–Ofelt parameters determined were Ω₂=9.01×10^-20 cm², Ω₄=1.36×10^-20 cm² and Ω₆=1.43×10^-20 cm². The maximum emission cross section for the 1.9 μm emission, calculated by Füchtbauer–Ladenburg method, is 1.75×10^-20 cm², at 1845 nm with E//N_m. The intensity decay time from the emitting levels ¹ G ₄ and ³ H ₄ levels in relation to the concentration were studied. For the lowest thulium concentration, the measured decay times from ¹ G ₄ and ³ H ₄ emitting levels are 140 μs and 230 μs, respectively. PACS 42.55.Rz; 78.20.-e; 78.55.-m