CaS∶Eu,Sm及其在农用转光膜上的应用原理

利用稀土直接掺杂工艺合成了一种“常光充能”型电子陷获材料CaS∶Eu,Sm,它不仅具有CaS∶Eu无机发光材料的荧光光谱特性,而且具有红外升频转换特性,可将0.8～ 1.6μm的红外光直接转换为～672nm的红光、量子效率高达76%,是一种优于CaS∶Eu的光转换农膜添加剂.而共掺Eu2＋、Sm3＋和Cu＋的CaS荧光粉有望成为一种性能优于光转换农膜添加剂CaS∶Eu2＋,Cu＋、可人工模拟叶绿素吸收光谱的新型农用转光膜材料.     

CaS:Eu,Sm及其在农用转光膜上的应用原理

利用稀土直接掺杂工艺合成了一种“常光充能”型电子陷获材料CaS:Eu,Sm,它不仅具有CaS:Eu无机发光材料的荧光光谱特性,而且具有红外升频转换特性,可将0.8～1.6μm的红外光直接转换为～672nm的红光、量子效率高达76%,是一种优于CaS:Eu的光转换农膜添加剂.而共掺Eu²⁺、Sm³⁺和Cu⁺的CaS荧光粉有望成为一种性能优于光转换农膜添加剂CaS:Eu²⁺,Cu⁺、可人工模拟叶绿素吸收光谱的新型农用转光膜材料.     

微波场作用下CaS:Eu~(2+)的快速合成及其荧光光谱特性

在微波场作用下快速合成了CaS :Eu2 +红色荧光体 ,用X射线粉末衍射 (XRD)分析证实它们是立方晶相 ,用扫描电镜 (SEM )观察了Eu2 +各种掺杂浓度下CaS :Eu2 +微晶的形貌及其粒径 ,测定了它们的荧光光谱和荧光衰减曲线。系统地探讨了Eu2 +离子浓度对晶体形貌和粒径以及荧光光谱性质之间的影响关系     

CaS·Cu+,Eu2+的光致发光及其在农业生产中的应用

研究了Cu+,Eu2+共激活的CaS的发光性质及激活剂浓度与荧光性质的关系.Cu+和Eu2+的发射光谱分别在430 nm附近及630 nm附近,它们是由Cu''Ca-Vs2+中心的离子发射和Eu2+的5d-4f跃迁发射产生的.实验结果表明,Cu+对Eu2+荧光发射有较强的敏化作用,Eu2+对Cu+发射峰值波长和强度也有显著影响;单掺Eu2+或Cu+的荧光粉是良好的农用薄膜红,蓝光转换剂,共掺Eu2+和Cu+的CaS荧光粉作光转换农膜添加剂可望人工模拟叶绿素的吸收光谱,使作物在植物最佳生长作用光谱环境中生长,促使作物早熟或提高作物产量.     

CaS:Ce和ZnS:Mn,Cu粉末DCEL包铜化学反应过程

本文研究了CaS:Ce和ZnS:Mn,Cu粉末DCEL材料的包铜化学反应过程,发现了一些包铜量随包铜温度、包铜时间、铜盐浓度等因素的变化规律和电导率随包铜量的变化规律,并对这些规律进行了探讨,同时根据一些补助实验和化学的反应基本原理提出了包铜化学反应过程的初步模型。     

CaS:Ce和ZnS:Mn,Cu粉末DCEL包铜化学反应过程

本文研究了CaS:Ce和ZnS:Mn,Cu粉末DCEL材料的包铜化学反应过程,发现了一些包铜量随包铜温度、包铜时间、铜盐浓度等因素的变化规律和电导率随包铜量的变化规律,并对这些规律进行了探讨,同时根据一些补助实验和化学的反应基本原理提出了包铜化学反应过程的初步模型。     

Mn掺杂的碱土金属硫化物红外光激励发光及光存储性能的比较

采用硫化助熔剂法制备了SrS：Eu,Mn和CaS：Eu,Mn荧光粉。与CaS相比,SrS基质材料的光激励发光峰位于610 nm,比前者更接近视觉敏感区。比较了不同基质材料的存储光和量,SrS基质材料存储能力强于CaS。同时Mn2+掺杂增大了碱土金属硫化物被存储的光子数量,有利于提高材料的存储性能。     

CaS∶Eu,Sm红外上转换薄膜光谱性能分析

为研究红外上转换材料CaS∶Eu,Sm的光谱性能,搭建了实验平台,对其荧光谱、红外激励发光谱(上转换发光谱)、红外激励谱、荧光余辉衰减曲线、红外激励发光衰减曲线进行了测试.实验结果表明:CaS∶Eu,Sm可被450~550nm的光激发,荧光激发波峰位于470nm,红外响应波段为800~1 600nm,红外激励波峰为1 200nm.     

电子俘获材料CaS∶Eu,Sm光谱特性研究

研究了电子俘获材料CaS∶Eu,Sm多晶粉末的紫外-可见-红外吸收光谱及红外激励光谱.研究结果表明,CaS∶Eu,Sm中主激活剂Eu和辅助激活剂Sm分别以Eu2 离子和Sm3 离子的形式存在;ETM的吸收差谱及红外激励光谱所反映的光谱特性是不同的.紫外-可见光区的吸收差谱给出了ETM光谱存储灵敏度的信息,而红外光谱区的吸收差谱给出了ETM所俘获电子数量的信息及电子陷阱能级的特征(深度和宽度)信息.红外激励光谱则反映了ETM将不同波长的红外激励光的能量转换为特定波长处的红外辐射光能量的光谱转换灵敏度.二者结合起来可以更完整地描述ETM的光谱特性.     

电子俘获材料CaS∶Eu,Sm光谱特性研究

研究了电子俘获材料CaS∶Eu,Sm多晶粉末的紫外-可见-红外吸收光谱及红外激励光谱.研究结果表明,CaS∶Eu,Sm中主激活剂Eu和辅助激活剂Sm分别以Eu2+离子和Sm3+离子的形式存在；ETM的吸收差谱及红外激励光谱所反映的光谱特性是不同的.紫外-可见光区的吸收差谱给出了ETM光谱存储灵敏度的信息,而红外光谱区的吸收差谱给出了ETM所俘获电子数量的信息及电子陷阱能级的特征（深度和宽度）信息.红外激励光谱则反映了ETM将不同波长的红外激励光的能量转换为特定波长处的红外辐射光能量的光谱转换灵敏度.二者结合起来可以更完整地描述ETM的光谱特性.     

Pb2+离子在CaS中的发光特性与应用

研究了单掺Pb^2 和共掺Pb^2 、Eu^2 离子的CaS 发光材料的荧光性质。Pb^2 的发射光谱位于蓝区，Eu^2 的发射光谱位于红区，实验结果表明，Pb^2 对Eu^2 荧光发射有很强的敏化作用。Pb^2在紫区有较强的吸收，说明Pb^2 、Eu^2 共激活的CsS材料是一种适用于高原寒冷地区的农用薄膜转光剂。     

微波场作用下CaS：Eu^2＋的快速合成及其荧光光谱特性

在微波场作用下快速合成了CaS：Eu^2 红色荧光体,用X射线粉末衍射（XRD）分析证实它们是立方晶相,用扫描电镜（SEM）观察了Eu^2 各种掺杂浓度下CaS：Eu^2 微晶的形貌及其粒径,测定了它们的荧光光谱和荧光衰减曲线。系统地探讨了Eu^2 离子浓度对晶体形貌和粒径以及荧光光谱性质之间的影响关系。     

Effect of the growth conditions on infrared upconversion efficiency of CaS: Eu, Sm thin films

High-quality electron-trapping thin films CaS: Eu, Sm with red light output have been successfully deposited on quartz and single-crystal silicon substrates by electron beam evaporation (EBE) and radio frequency (RF) magnetron sputtering in vacuum and H₂S partial pressures. Infrared upconversion efficiency of CaS: Eu, Sm thin films under different growth conditions has been investigated by using ultrashort infrared (IR) laser pulse with 20 ps (full width at half-maximum (FWHM)). The results show that upconversion efficiency of CaS: Eu, Sm thin films depends strongly on growth conditions in spite of the existence of “exhaustion” phenomena. Microstructures identified by X-ray diffraction (XRD) indicate that crystallinity of CaS films relies on both substrate materials and growth conditions. The stoichiometric composition of CaS films was measured by secondary-ion mass spectrometry (SIMS). The post-annealing process was found to promote grain growth and activate strong luminescence so that it could obviously improve upconversion efficiency of CaS: Eu, Sm films, even though it had negative influence on transmittance and spatial resolution of these films. Received: 5 June 2000 / Accepted: 7 June 2000 / Published online: 23 August 2000     

Different Eu-centres in CaS:Eu, Cl

The EPR and luminescence properties of CaS:Eu,Cl-luminophors with different Cl and Eu concentrations are studied. The Mössbauer effect on ¹⁵¹Eu is measured. Eu as a dopant is shown to form mainly Eu³⁺-centres rather than Eu²⁺-centres. Eu oxidation to Eu³⁺ is due to the formation of V_CaCl_S-associates in the CaS lattice. Besides the Eu²⁺-centres of high symmetry various Eu²⁺-Eu²⁺ pairs are formed and are responsible for a broad structureless EPR spectrum and for an infrared shift of the Eu²⁺ luminescence band.     

CaS∶Eu,Sm光存储材料的光谱特性

CaS∶Eu, Sm是一种典型的电子俘获型光存储材料,文章采用湿法在还原气氛中制备了CaS∶Eu, Sm粉末样品。测量了这种光存储材料的XRD、激发光谱、发射光谱、光激励发光光谱、热释光谱以及光激励发光衰减曲线。XRD结果表明样品在1 050 ℃晶格已经形成。光谱测试结果说明紫外光可激发该材料,作为信息写入光源。样品被紫外光源饱和激发后,用980 nm红外激光激励,发射出峰值位于635 nm的红光。光激励发光起初衰减较快,随后有一个较长的平缓期。且样品具有合适深度的陷阱能级,能够稳定存储信息。对CaS∶Eu, Sm的光存储机理进行了探讨。     

稀土无机发光材料Ca1—nMgnS：Cu^＋,Eu^2＋的合成与光谱特征

报道了Ｃｕ＾＋，Ｅｕ＾２＋共激活的Ｃａ１－ｘＭｇｎＳ的发光性质，基质组分变化与荧光性质的关系，Ｃｕ＾＋和Ｅｕ＾２＋在纯ＣａＳ基质中的发射光谱分别位于４３０ｎｍ及６３０ｎｍ附近，随着基质中Ｍｇ含量的增加，红，蓝区发射峰值波长基本不变，但强度发生明显改变，当ｎ为０．２５时，红区发射强度最强。     

Excitation-energy transfer in infrared -stimulable CaS doubly doped with Eu and Sm

The photoluminescence emission (PLE) mapping and infrared-stimulated luminescence (ISL) spectra of CaS:Eu,Sm demonstrated that Eu is formed in Eu²⁺ as a luminescent centre, whereas Sm is formed in Sm³⁺ as an electron-trapping centre by replacing Ca²⁺ in the CaS host lattice. It was found that electron trapping occurred in the photoluminescence excitation (PLX) process. A series of concentrations of Eu with a fixed Sm concentration and a series of concentrations of Sm with a fixed Eu concentration in doubly doped CaS:Eu,Sm were studied by the time-related PLE of Eu²⁺ in the PLX process. According to the electronic energy level(s) of Eu²⁺ and Sm³⁺, excitation-energy transfer is realized by translocation of excited electrons from Eu²⁺ to Sm³⁺, causing simultaneous ionization of Eu²⁺ (leaving Eu³⁺) and capture of excited electrons at Sm³⁺ (forming Sm²⁺). ISL is then produced due to the energy released from recombination of de-trapped electrons from the occupied electron-trapping sites (Sm²⁺) and the previously ionized luminescent centres (Eu³⁺) under infrared irradiation. PACS 78.55.-m; 78.45.+h; 78.55.Et