TiN/TiB2异结构纳米多层膜的共格生长与力学性能

采用多靶磁控溅射法制备了一系列具有不同TiB₂调制层厚度的TiN/TiB_{2纳米多层膜.利用x射线衍射仪、高分辨电子显微镜和微力学探针研究了TiB2层厚变化对多层膜生长结构和力学性能的影响.结果表明，在fcc-TiN层(111)生长面的模板 作用下，原为非晶态的TiB2层在厚度小于2.9nm时形成hcp晶体态，并与fcc-TiN 形成共格外延生长；其界面共格关系为{111}TiN//{0001}TiB2，〈110〉TiN//〈1120〉TiB2.由于共格界面存在晶格失配 度，多层膜中形成拉、压交变的应力场，导致多层膜产生硬度和弹性模量升高的超硬效应， 最高硬度和弹性模量分别达到46.9GPa和465GPa.继续增加TiB2层的厚度，TiB2形成非晶态并破坏了与TiN层的共格外延生长，多层膜形成非晶TiN层和非晶TiB< sub>2层交替的调制结构，其硬度和弹性模量相应降低. 关键词： 2}纳米多层膜')" href="#">TiN/TiB₂纳米多层膜 共格生长 晶体化 力学性能     

高掺镁铌酸锂晶体的生长和倍频性能

我们通过测定MgO在同成分LiNbO₃中的有效分凝系数、相位匹配温度与MgO浓度之间的关系,找到了使Mg:LiNbO₃晶体的相位匹配温度达到最高的掺MgO配方,并克服了Mg:LiNbO₃晶体在高掺杂生长时易出现生长条纹和脱溶等问题,从而生长出了抗光折变能力强,光学均匀性良好的Mg:LiNbO₃晶体。用于连续泵浦Nd:YAG声-光调Q腔内倍频时,获得了平均功率最高达2瓦的二次谐波输出。 关键词：     

LiNbO3晶体中缺陷的X射线形貌研究

用X射线透射扫描形貌方法观察了直拉法生长LiNbO₃晶体中各种类型点阵缺陷,诸如铁电畴壁、生长层、位错、亚晶界和胞状组织等;用不同衍射矢量对[001]和[210]方向生长的晶体的形貌消象规律,结合X射线铁电异常散射效应和光学显微观察,讨论了晶体中180°铁电畴和生长层的衬度及其分布,并研究了LiNbO₃晶体中180°畴壁形成及其相互关系。 关键词：     

Si3N4在h-AlN上的晶体化与AlN/Si3N4纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列具有不同Si₃N₄层厚度的AlN/Si₃N₄纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能.研究了Si₃N₄层在AlN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜生长结构与力学性能的影响.结果表明,在六方纤锌矿结构的晶体AlN调制层的模板作用下,通常溅射条件下以非晶态存在的Si₃N₄层在其厚度小于约1nm时被强制晶化为结构与AlN相同的赝形晶体,AlN/Si₃N₄纳米多层膜形成共格外延生长的结构,相应地,多层膜产生硬度升高的超硬效应.Si₃N₄随层厚的进一步增加又转变为非晶态,多层膜的共格生长结构因而受到破坏,其硬度也随之降低.分析认为,AlN/Si₃N₄纳米多层膜超硬效应的产生与多层膜共格外延生长所形成的拉压交变应力场导致的两调制层模量差的增大有关. 关键词： 3N₄纳米多层膜')" href="#">AlN/Si₃N₄纳米多层膜 外延生长 赝晶体 超硬效应     

异质单周期内对称光子晶体的光子带隙特性

利用传输矩阵法,理论上对由TIO₂和SiO₂构成的异质单周期内对称光子晶体的透射谱进行仿真,分别改变入射光的角度、光子晶体介质层数和BA两层的厚度比,观察其透射谱,研究发现该结构形成的光子带隙的位置大小对介质层数的变化不敏感,但对入射角和BA两层厚度比的变化很敏感,这一研究对于光子晶体的设计具有重要意义.     

熔盐生长KTiOPO4晶体的层绵成因与克服方法

本文用光学显微术观察了在多磷酸钾盐熔盐中生长的KTiOPO₄(KTP)晶体的表面形态和内部疵病,并借助扫描电子显微镜和能谱分析得到了横贯层绵结构的体过饱和度变化规律。基于上述结果,阐明了在不适当的生长条件下,由于晶面上熔质分布高度不均匀而形成宏观包藏——层绵的原因与过程。当熔液浓度位于稳定生长所需的临界过饱和度区域内,即各处σ均大于该区的下限(～1.3)时,重复长出了无层绵透明的KTP晶体。 关键词：     

原子级控制的约瑟夫森结中Al2O3势垒层制备工艺

传统热氧化方式制备约瑟夫森结中AlO_X势垒层是将高纯度氧气扩散到Al表面进行,但该方式制备的势垒层氧化不完全,厚度难以精准控制.本文采用原子层沉积方式在金属Ti表面逐层生长Al₂O₃势垒层,并制备出三明治结构的Ti/Al₂O₃/Ti约瑟夫森结.通过调节Al₂O₃势垒层的沉积厚度和约瑟夫森结的面积研究了其相应的微观结构及电学性质.实验结果表明,原子层沉积方式生长的单层Al₂O₃薄膜厚度约为1.17?(1?=10^-10 m),达到原子级控制势垒层厚度,通过调节势垒层厚度实现了对结室温电阻值的控制,并通过优化结面积获得了室温电阻均匀性良好的约瑟夫森结.     

SiO2的赝晶化及AlN/SiO2纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列不同SiO₂层厚度的AlN/SiO₂纳米多层膜，利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能，研究了SiO₂层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响. 结果表明，由于受AlN六方晶体结构的模板作用，溅射条件下以非晶态存在的SiO₂层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长. 由于不同模量的两调制层存在晶格错配度，多层膜中产生了拉、压交变的应力场，使得多层膜产生硬度升高的超硬效应. SiO₂随层厚的进一步增加又转变为以非晶态生长，多层膜的外延生长结构受到破坏，其硬度也随之降低. 关键词： 2纳米多层膜')" href="#">AlN/SiO₂纳米多层膜 赝晶化 应力场 超硬效应     

AlxGa1-xN晶体薄膜中铝含量的卢瑟福背散射精确测定

采用金属有机化合物气相淀积法在(0001)取向的蓝宝石衬底上生长一层 大约20 nm厚的AlN缓冲层, 在缓冲层上生长大约2 μm厚、 晶体质量良好的Al_xGa_1-xN外延层, 通过深紫外光致发光法测量发光峰的能量E_g 判断外延层中铝含量的均匀性, 取样品均匀性良好的氮铝镓外延片进行卢瑟福背散射(RBS)实验, 通过两个高能离子束实验室分别进行RBS随机谱分析, 每个实验室测量六个样品, 由分析软件拟合随机谱获得外延层中的x_Al. 并对样品的均匀性、堆积校准、计数统计、散射角、离子束能量与阻止截面 等影响测量结果准确性的不确定度来源进行分析. 结果表明, 采用入射离子⁴He, 能量为2000 keV, 散射角为165° 时, 氮铝镓外延片中铝含量(x=0.8) 的测量不确定度为2.0%, 包含扩展因子k=2. 关键词： 氮铝镓 卢瑟福背散射 测量不确定度 金属有机化合物气相淀积法     

α-LiIO3单晶体在静电场作用下点阵常数的变化

本文用X射线双晶衍射平行排列(n,-n)的方法,观察了α-LiIO₃单晶体生长过程点阵常数a与c不规则的不均匀性以及在静电场作用下c的起伏现象。观测出在静电场作用下a与c的变化和沿电场方向晶体表面层存在点阵常数的梯度。从而,证明了l≠0的晶面在静电场作用下,中子衍射的增强是由于在z轴向点阵常数c存在梯度的观点。同时,(010)晶面中子衍射强度在同样静电场作用下不增强的实验事实,从本实验结果,可以认为是点阵常数a原有的不均匀性较大,掩盖了a的梯度所致。 关键词：     

Metalorganic chemical vapor phase epitaxy and structural properties of Ga1-xPxN on GaN/Si(111) substrates

GaPN-layers with phosphorus concentrations up to 4.4% were grown on GaN/Si(111) substrates by metal organic vapour phase epitaxy. The growth temperature and phosphine flows were varied in order to investigate the growth characteristics of the GaPN layers. The layers were investigated by X-ray diffraction, transmission electron diffraction, energy dispersive X-ray measurements, scanning electron microscopy, transmission electron microscopy, and photoluminescence. Singlecrystalline wurtzite-type epitaxial GaPN(0001) layers were obtained for x<0.05. For such layers X-ray and transmission electron diffraction measurements show a reduction of both the c- and a-latticeparameters without a change of the wurtzite-type crystal structure, thus indicating that phosphorus is incorporated as P³⁺ or P⁵⁺ likely substituting the Gallium lattice sites of the GaN-crystal, i.e. the formation of Ga_1-xP_xN and not GaN_1-xP_x as might be expected. For higher phosphorous contents phase separation effects and a variety of different phases were observed. PACS 61.43.Dq; 68.55.Jk; 81.15.Gh; 81.05.Ea     

磷酸铝(AlPO4)晶体中缺陷的X射线形貌研究

用X射线衍射形貌法研究了AlPO₄晶体中的微观缺陷。在所研究的晶体中,主要晶体缺陷是生长层,沉淀物和位错。位错密度在晶体表面附近最大,晶体中部较低。位错主要起源于热应力和由沉淀物或生长层所造成的晶格畸变。多数位错的柏氏矢量是b=(a+c)<1123>型,部分的是b=a[2110]。分析了晶体缺陷与生长条件之间的关系。控制生长过程中的温度波动,特别是晶体出炉时的冷却速度,对提高晶体完美性是重要的。 关键词：     

OH-吸收带作为铌酸锂晶体缺陷结构的探针

本文报道了一组不同Li/Nb比和另一组不同掺Mg浓度的LiNbO₃晶体室温OH^-吸收带的实验结果,观察到OH^-吸收带的三峰结构及其随Li/Nb比的变化,以及重掺Mg晶体中(6mol％MgO)OH^-吸收带转变为双峰结构,并向高能端移动54cm^-1。根据LiNbO₃的晶体结构以及Abrahams和Smyth的缺陷结构模型,对化学计量晶体、一致熔化晶体和掺Mg晶体分别进行讨论。并提出重掺Mg晶体中OH^-吸收带向高能端的移动可能是由于当掺Mg浓度超过阈值后Mg²⁺离子开始进入Nb位而引起的。 关键词：     

Metal–insulator transition induced by non-stoichiometry of surface layer and molecular reactions on single crystal KTaO3

In the study we present results on topography, morphology, chemical composition, electronic structure and electrical properties of the (100) surface layer of KTaO₃ single crystal caused by sputtering with Ar⁺ ion beam with energy of 1 keV. Several surface sensitive techniques, i.e. X-ray photoelectron spectroscopy (XPS), local conductivity of atomic force microscopy (LC-AFM), and Kelvin Probe Force Microscopy (KPFM) were used. The observed changes in the electronic structure were explained as a result of the chemical decomposition of the surface layer. A correlation between the electronic states which appeared in the energy gap and the changes in charge state of Ta ions was found. The activation energy related to averaged local conductivity temperature dependence was estimated from Arrhenius plot. It was also found, that variations in the local contact potential difference (LCPD) indicated changes in the chemical composition in nano-scale. The chemical reconstruction of the KTaO₃ surface modified by Ar⁺ ion beam was deduced. This non-homogeneity corresponded to 2-D non-homogeneity of the local electric conduction (LC-AFM), which occurred within nano-areas after sputtering. Chemical reactivity of the modified surface with CO₂ and O₂ was observed. The reversibility of the Ar⁺ induced loss of oxygen non-stoichiometry was observed after the sample was exposed to various doses of O₂. The successful reversibility occurred after oxidation process at high temperature, i.e. 300 °C.     

Crystallization behaviour of Ge17Sb23Se60 thin films

The crystallization behaviour of as-prepared and nucleated Ge₁₇Sb₂₃Se₆₀ thin films was studied by means of differential scanning calorimetry, X-ray diffraction analysis and scanning electron microscopy. Detailed analysis of the non-isothermal crystal growth kinetics was performed; the apparent activation energy, kinetic model and value of the pre-exponential factor were determined. The kinetic behaviour was found to be surprisingly close to the ideal Johnson–Mehl–Avrami nucleation-growth process, with the only non-ideality being the prolonged peak end tail (which may be a specificity associated with certain thicknesses of thin layers). This corresponds to the initiation of crystal growth in agreement with the classical nucleation theory, with the amount of mechanical defects and strains being negligible. The value of the kinetic parameter suggests two-dimensional crystal growth, which is consistent with the idea of macroscopic crystallites growing in a sterically restricted thin layer. A similar conclusion can be made on the basis of direct microscopic observation of the crystallites’ morphology.     

In situ observation and simulation of growth process of faceted RE123 crystals

To clarify the growth mechanism of faceted REBa₂Cu₃O_7−δ (RE123, RE = Sm, Y) crystals, the growth process of the crystals was observed in situ by using a high temperature microscope. The growth rate of each faceted interface of a crystal growing from the liquid + 211 phases under an undercooling was obtained from the relationship between the position of each interface and growth time. It was observed that some of the faceted interfaces of a growing crystal stopped growing after a period of time, while other interfaces continued to grow with a growth rate approximated by a function of the undercooling. The above stoppage of the growth was observed in situ for the first time, and this fact could give powerful support to the mechanism for a similar phenomenon in REBCO films which were fabricated by the trifluoroacetates metal organic deposition method: growing microstructures of RE123 crystals in the film were revealed by transmission electron microscopy (TEM) for quenched specimens. Some very thin a-axis grains were formed by a change in c-axis growth rate. Furthermore, we showed the above growth and stop phenomena of faceted interfaces of REBCO crystal grains using numerical simulations.     

Evolution of micro-arc oxidation behaviors of the hot-dipping aluminum coatings on Q235 steel substrate

Micro-arc oxidation (MAO) is not applicable to prepare ceramic coatings on the surface of steel directly. In this work, hybrid method of MAO and hot-dipping aluminum (HDA) were employed to fabricate composite ceramic coatings on the surface of Q235 steel. The evolution of MAO coatings, such as growth rate, thickness of the total coatings, ingrown and outgrown coatings, cross section and surface morphologies and phase composition of the ceramic coatings were studied. The results indicate that both the current density and the processing time can affect the total thickness, the growth rate and the ratio of ingrown and outgrown thickness of the ceramic coatings. The total thickness, outgrown thickness and growth rate have maximum values with the processing time prolonged. The time when the maximum value appears decreases and the ingrown dominant turns to outgrown dominant little by little with the current density increasing. The composite coatings obtained by this hybrid method consists of three layers from inside to outside, i.e. Fe-Al alloy layer next to the substrate, aluminum layer between the Fe-Al layer and the ceramic coatings which is as the top exterior layer. Metallurgical bonding was observed between every of the two layers. There are many micro-pores and micro-cracks, which act as discharge channels and result of quick and non-uniform cooling of melted sections in the MAO coatings. The phase composition of the ceramic coatings is mainly composed of amorphous phase and crystal Al₂O₃ oxides. The crystal Al₂O₃ phase includes κ-Al₂O₃, θ-Al₂O₃ and β-Al₂O₃. Compared with the others, the β-Al₂O₃ content is the least. The MAO process can be divided into three periods, namely the common anodic oxidation stage, the stable MAO stage and the ceramic coatings destroyed stage. The exterior loose part of the ceramic coatings was destroyed badly in the last period which should be avoided during the MAO process.     

Sb2Te3 纳米结构的制备与表征

以室温热电性能优异的传统热电材料Sb₂Te₃为研究对象,利用化学气相沉积法制备Sb₂Te₃单晶纳米结构,并研究其生长机理.实验结果表明,不加催化剂时Sb₂Te₃易生长成六方纳米盘,在金催化剂条件下定向生长成纳米线.Sb₂Te₃的形貌与其晶体结构和生长机理有关.Sb₂Te₃为三角结构,Sb和     

Effect of lead doping in the system Bi-Sr-Ca-Cu-O on the formation of 2212 crystals, grown from a KCl flux using pre-synthesized compounds (precursors)

A combination of the solution-melt method and solid-phase synthesis of complex oxides has been used to obtain crystals of Bi₂Sr₂CaCu₂O₈ (2212). Partial substitution of bismuth by lead leads to a change in the orientation of the growth layers in the (001) plane of the 2212 crystal which has an orthorhombic lattice. An increase in the dimensions is noted along with an enhancement of the quality of the crystals when lead is introduced into the composition of the precursors. Fiz. Tverd. Tela (St. Petersburg) 39, 219–221 (February 1997)     

INFLUENCE OF SEED CRYSTAL DIMENSION ON CRYSTAL GROWTH FROM SOLUTION UNDER MICROGRAVITY

The influence of the dimension of seed crystal on the characteristics of crystal growth from solution under microgravity is studied. The dimensionless average velocity of fluid V_av, the dimensionless maximum velocity of fluid V_max, the temperature distribution index S_θ, the concentration distribution index S_φ and the dimensionless average growth rate of crystal \overline{V}_cg are calculated by only taking into account the variation of the solution density caused by the temperature change, that caused by the concentration change being neglected. In certain regions of the parameter (Ra, Pr,Sc and μ) space, some scaling laws are generated: the scales of S_φ and \overline{V}_cg are given by power functions of μ with negative exponents. It is shown that the characteristics of crystal growth for small seed crystal are different from those for large seed crystal.