基于4H-SiC的高能量分辨率α粒子探测器

为突破传统半导体核探测器耐高温与抗辐照性能不足的瓶颈,采用4H-SiC宽禁带半导体材料研制了4H-SiC探测器,并研究其构成的探测系统对α粒子的能量分辨率和能量线性度。所研制4H-SiC探测器漏电流低,当外加反向偏压为200V时,其漏电流仅14.92nA/cm2。采用具有5种主要能量α粒子的226 Ra源研究其构成的探测系统对α粒子的能量分辨率,获得4H-SiC探测系统对4.8~7.7 MeV能量范围内α粒子的能量分辨率为0.61%~0.90%,与国际上报道的高分辨4H-SiC探测系统能量分辨率一致。同时,实验结果表明:4H-SiC探测系统对该能量范围内α粒子的能量线性度十分优异,线性相关系数为0.999 99。     

基于4H-SiC的高能量分辨率α粒子探测器

为突破传统半导体核探测器耐高温与抗辐照性能不足的瓶颈,采用4H-SiC宽禁带半导体材料研制了4H-SiC探测器,并研究其构成的探测系统对粒子的能量分辨率和能量线性度。所研制4H-SiC探测器漏电流低,当外加反向偏压为200 V时,其漏电流仅14.92 nA/cm2。采用具有5种主要能量粒子的226Ra源研究其构成的探测系统对粒子的能量分辨率,获得4H-SiC探测系统对4.8~7.7 MeV能量范围内粒子的能量分辨率为0.61%~0.90%,与国际上报道的高分辨4H-SiC探测系统能量分辨率一致。同时,实验结果表明：4H-SiC探测系统对该能量范围内粒子的能量线性度十分优异,线性相关系数为0.999 99。     

High-resolution analytical electron microscopy of catalytically etched silicon nanowires

We report on the characterization of hexagonally ordered, vertically aligned silicon nanowires (SiNW) by means of analytical transmission electron microscopy. Combining colloidal lithography, plasma etching, and catalytic wet etching arrays of SiNW of a sub-50 nm diameter with an aspect ratio of up to 10 could be fabricated. Scanning transmission electron microscopy has been applied in order to investigate the morphology, the internal structure, and the composition of the catalytically etched SiNW. The analysis yielded a single-crystalline porous structure composed of crystalline silicon, amorphous silicon, and SiO _x with x≤2.     

Atomic surface diffusion on Pt nanoparticles quantified by high-resolution transmission electron microscopy

Aberration-corrected high-resolution transmission electron microscopy allows for the delocalization-free observation of atomic motions on metallic surfaces and thus enables measurements of the diffusion of single atoms on the surfaces of nanoscopic objects such as nanoparticles. Using this recently introduced method, the diffusion coefficient for surface self-diffusion of Pt nanoparticles is determined through the fluctuating occupation of the particle's atomic columns. This diffusion coefficient is determined to lie in the range D ∼ (10⁻¹⁷ … 10⁻¹⁶) cm²/s.     

Preparation of ion-implanted silicon for transmission electron microscopy

This paper deals with the preparation technique of thin foils (below 5000 Å) for the transmission electron microscopy from silicon implanted by N⁺ ions. Mechanical and chemical thinning and anodic oxidation techniques are discussed and selective etching of the surface of silicon for the purposes of the replica technique is noted. Compositions of etching solutions and other experimental parameters are mentioned. The results are demonstrated on electron micrographs showing the radiation damage due to ion implantation in silicon.     

High-resolution transmission and scanning electron microscopy of boride-nitride nanostructured films

The results of electron-microscopic studies of grain boundaries and the structure of fractures of titanium boride-and nitride-based films obtained by nonreactive magnetron sputtering are considered. The chemical and phase composition of the films is analyzed with the help of Auger electron spectroscopy and microscopic electron diffraction analysis. The structure of boundaries and the presence of amorphous inclusions, dislocations, and other structural distortions are discussed and the nature of the deformation under indentation is considered.     

Magnetism of hydrogen-irradiated silicon carbide

Spin-polarized density functional theory is used to study two-hydrogen defect complexes in silicon carbide. We find that the magnetism depends on the distances of the two hydrogen atoms. Magnetism appears when the two hydrogen defects are distant from each other, and magnetism cancels out if they are close to each other. The critical distance between the two hydrogen defects is determined.     

High-resolution transmission electron microscopy of phase formation and growth in metal-Si-Ge systems

High-resolution transmission electron microscopy (HRTEM) in conjunction with nano-beam (NB) analysis as well as energy dispersive spectrometry analysis have been fruitfully utilized to study the interfacial reactions in the metal-Si-Ge systems. In this paper we report the results of TEM study of the phase formation and growth in Ti-Si-Ge, Cu-Si-Ge and Ni-Si-Ge systems.     

High-resolution transmission electron microscopy of heteroepitaxial barium strontium titanate films grown on MgO substrates

Nanoscale (5–100 nm) ferroelectric heteroepitaxial Ba_0.8Sr_0.2TiO₃ films on MgO(001) substrates were studied by methods of high-resolution transmission electron microscopy using Tecnai G² and FEI Titan 80–300 microscopes. Misfit dislocations resulting from stress relaxation in films and insignificant local misorientation of film regions (block structure) were detected. The heterostructure was numerically simulated, which allowed the detection of the formation of oxygen (substrate)-titanium (film) bonds or the oxygen (substrate)-barium (film) bond at the film-substrate interface.     

直拉硅单晶中原生氧沉淀的透射电镜研究

利用透射电镜对掺氮(NCZ) 和普通 (CZ) 直拉硅单晶中的原生氧沉淀进行研究. 研究表明，在NCZ样品中，有高密度的粒径为5nm的氧沉淀生成，而在CZ样品中，没有观察到这种氧沉淀. 初步认为，这种细小的氧沉淀是以650℃低温下形成的N-O复合体为核心在随后的冷却过程中形成. 关键词： 直拉硅 透射电镜 氧沉淀     

High-resolution electron microscopy of grain boundaries

Our ability to observe atomic-scale features of grain boundaries has tremendously improved during the past decade. In this paper we give, aided by a number of examples, a select overview, on progress in the field of grain boundary research directly related to the advent of modern high-resolution electron microscopy (HREM) instruments (point-to-point resolution better than 0.2 nm). Examples of grain boundary issues addressed by atomic structure observations of grain boundaries in oxides and metals will be given with emphasis on systematic investigations of the role of macroscopic and microscopic grain boundary parameters. Since comparisons between observed interface structures and atomistic computer modeling results are quite important, considerable efforts towards quantification have been undertaken recently by a number of authors. Most valuable insights have been obtained by the systematic examination of a range of grain boundary structures, using a combination of experimental observations and computer modeling results. In this manner HREM observations have been invaluable not only as a test of theoretical models, but also by exposing common atomic-scale features of high-angle grain boundaries. This has brought us closer to the goal of generating a general understanding of the interface structure and its connection to properties. Such studies have given valuable insights regarding the correlations between macroscopic grain boundary geometry, interfacial energy, and atomic relaxation modes.Work supported by the U.S. Department of Energy, Basic Energy Sciences, under contract W-31-109-Eng-38.     

High resolution transmission electron microscopy (HRTEM) and image analysis of uPVC thin films

The current model for the fine scale microstructure of unplasticized PVC (uPVC) has been built up using various quantitative techniques, such aa wide and small angle X-ray diffraction. The use of transmission electron microscopy (TEM) as a more qualitative technique has been previously attempted (Meyer et al., 1978), revealing only amorphous detail on the scale of the expected crystallinity. For this study, a combination of high resolution TEM (HRTEM) and digital image processing techniques was utilized in order to verify the ‘micro-domain’ model proposed by Summers (1981). The techniques utilized here are particularly applicable in examining the fine-scale texture of oriented polymers.     

A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide

A self-powered graphene-based photodetector with high performance is particularly useful for device miniaturization and to save energy.Here,we report a graphene/silicon carbide(SiC)-based self-powered ultraviolet photodetector that exhibits a current responsivity of 7.4 m A/W with a response frequency of over a megahertz under 325-nm laser irradiation.The built-in photovoltage of the photodetector is about four orders of magnitude higher than previously reported results for similar devices.These favorable properties are ascribed to the ingenious device design using the combined advantages of graphene and SiC,two terminal electrodes,and asymmetric light irradiation on one of the electrodes.Importantly,the photon energy is larger than the band gap of SiC.This self-powered photodetector is compatible with modern semiconductor technology and shows potential for applications in ultraviolet imaging and graphene-based integrated circuits.     

Ab initio study of palladium and silicon carbide

Ab initio methods have been used to investigate the properties of Pd as impurity in bulk SiC at five charged states within the framework of density functional theory using the local spin density approximation. It was found that Pd interstitials and substitutionals have similar energy to their intrinsic counterparts. In addition, Pd substitutes for a vacancy, di-vacancy, and tri-vacancy with similar energies. Pd diffuses through SiC via an interstitial mechanism employing the tetrahedral sites and Pd can substitute for Si and C at positive charged states. Removing electrons (p-type doping) from SiC lowers the formation and migration energies of Pd defects in SiC for most configurations.     

反应烧结碳化硅平面反射镜的光学加工

介绍了100mm口径反应烧结碳化硅平面反射镜的光学加工工艺流程。按照流程依次介绍了在粗磨成形、细磨抛光和精磨抛光过程中使用的机床、磨具和磨料以及采用的工艺参数和检测方法。介绍了在光学加工各个步骤中应注意的问题。展示了加工后反应烧结碳化硅平面反射镜的实物照片。给出了面形精度和表面粗糙度的检测结果:面形精度(95%孔径)均方根值(RMS)为0.030λ(λ=632.8nm),表面粗糙度RMS值达到了1.14nm(测量区域大小为603 6μmⅹ448 4μm)。     

High-resolution electron microscopy of heterostructures and interfaces

High-resolution transmission electron microscopy (HREM) allows to study a wide range of device-relevant topics in heteroepitaxial layer structures. Quantitative HREM may be used to obtain chemical information on a near-atomic scale from interfacial transition zones. The physical background is described and demonstrated on several examples in the Al _x Gal_1–x As/GaAs system. The HREM contrast of antiphase boundaries in InP grown on Si was studied by image simulations and has been compared to experimental images. Silicon carbide precipitates were identified by HREM at the homoepitaxial Si/Si interface. They stem from carbon contamination prior to Si layer growth.     

Scanning tunneling microscopy investigations of silicon carbide nanowires

Scanning tunneling microscopy (STM) images have been obtained from the surfaces of silicon carbide nanowires produced in the thermolysis-induced carbonization of halocarbons (combustion synthesis). The morphology of the nanowires shows trench-like features perpendicular to the fibres’ axis, which is assigned to the existence of microfacets on their sidewalls. For the first time high-resolution STM images of the SiC nanowires are presented. The results are in agreement with the previous reports suggesting the presence of microfacets on the SiC whiskers’ surface.     

High-resolution electron microscopy study of SiGeC thin films grown on Si(1 0 0) by laser-assisted techniques

PLIE was used for rapid crystallisation of a-SiGeC films deposited by LCVD on Si(1 0 0) substrates. HRTEM study of thin films grown with several laser energies shows that the combination of the two laser techniques gives an almost completely crystallised alloy, even for the lowest laser fluence. Island formation is observed below a certain threshold of fluence (about 450 mJ/cm²). In the case of the lowest energy (100 mJ/cm²) the material was partially crystallised (with the crystalline material being the predominant state), to a nanocrystalline alloy with a considerable amount of epitaxialy grown grains and with grain sizes of several tens of nanometers. Above the threshold of 450 mJ/cm² a rather smooth thin film is grown. The crystallisation is almost complete and the alloy is grown in an almost perfect epitaxial way.