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1.
离子注入硅片经高温退火后晶体结构缺陷会被修复,其在可见光波段下的光学性质趋于单晶硅,常规的可见光椭偏光谱法对掺杂影响的测量不再有效.本研究将测量波段扩展到红外区域(2—20μm),报道了利用红外椭偏光谱法测量经离子注入掺杂并高温退火的硅片掺杂层光学和电学性质的方法和结果.通过建立基于Drude自由载流子吸收的等效光学模型,得到了杂质激活后掺杂层的杂质浓度分布、电阻率和载流子迁移率等电学参数,以及掺杂层的红外光学常数色散关系,分析了这些参数随注入剂量的关系并对其物理机理给予了解释.研究表明,中远红外椭偏测量是表征退火硅片的有效方法,且测量波长越长,所能分辨的掺杂浓度越低. 相似文献
2.
G.L.N. Reddy 《Applied Surface Science》2007,253(17):7230-7237
The thermal oxidation of dc magnetron sputter deposited thin ZrN films in air in the temperature range of 100-475 °C has been studied by depth profiling N using nuclear reaction analysis (NRA) involving 15N(1H,αγ)12C resonance reaction and O using 3.05 MeV 16O(α,α)16O resonant scattering. The structural and morphological changes accompanying the process have also been investigated. NRA/backscattering spectrometry measurements show that oxidation results in the formation of ZrO1.8±0.1 at the surface. An interface consisting of Zr, O and N is also formed underneath the surface oxide. For an isothermal annealing, oxide layer as well as interface exhibits parabolic growth with the duration of annealing. The diffusion of oxygen through the already grown oxide layer (D = 5.6 × 10−14 cm2 s−1 at 475 °C) forms the rate-controlling step of oxidation. The diffusion may be facilitated by the high concentration of oxygen vacancies in the oxide layer. Glancing incidence X-ray diffraction (GIXRD) measurements indicate that zirconia films formed are phase-singular (monoclinic) and are textured in (2 0 0) and (3 1 1) orientations. Examination by scanning electron microscopy (SEM) reveals the formation of blisters on sample surfaces on prolonged oxidation. The blistering can be attributed to intrinsic growth stress arising due to the larger molar volume of zirconium oxide in comparison to zirconium nitride, a fact demonstrated by the depth profile measurements as well. 相似文献
3.
Polymer inclusion membranes (PIMs) composed of a homogeneous mixture of cellulose triacetate matrix, 2-nitro-phenyl-octyl-ether as plasticizer and tri-octyl-phosphine-oxyde as carrier were synthesized by the spin coating method. Synthesized membranes were doped with molybdenum metal ions and then characterized by four experimental techniques: thermo gravimetric and differential analyses, scanning electron microscopy (SEM), attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy and Rutherford backscattering (RBS) spectrometry using a 3.2 MeV He+ ion beam. The RBS analysis has established both the elemental composition as well as the Mo+ metal profiling of the studied PIMs. The experimental irradiation conditions were optimized in order to determine the ion fluence thresholds resulting in measurable changes in elemental composition of membranes. Changes in physico-chemical properties of the irradiated PIMs vs He+ ion fluence were observed with the ATR-FTIR analysis. Also, the SEM analysis of PIMs surfaces has revealed a porous texture, while the thermal analysis of annealed PIMs at 105°C has showed no significant changes of mass (~1%) of the studied samples. 相似文献
4.
利用离子注入掺杂技术设计、制作半导体集成器件时,了解离子注入半导体材料的射程分布、射程离散和横向离散规律等是很重要的.用400 keV能量的铒(Er)离子分别与样品表面法线方向成0°,45°和 60°倾角注入碳化硅(6H-SiC)晶体中,利用卢瑟福背散射技术研究了剂量为5×1015 cm-2 的400 keV Er离子注入6H-SiC晶体的横向离散.测出的实验值与TRIM98和SRIM 2006得到的理论模拟值进行了比较,发现实验值跟TRIM98和SRIM
关键词:
离子注入
6H-SiC
卢瑟福背散射技术
横向离散 相似文献
5.
Due to the need to reduce electronic device sizes,it is very important to consider the depth and lateral distribution of ions implanted into a crystalline target.This paper reports that Nd ions with energies of 200 keV to 500 keV and dose of 5×10 15 ions/cm 2 are implanted into Si single crystals at room temperature under the angles of 0,30,and 45,respectively.The lateral spreads of 200 keV-500 keV Nd ions implanted in Si sample are measured by Rutherford backscattering technique.The results show that the measured values are in good agreement with those obtained from the prediction of SRIM2010 codes. 相似文献
6.
The erbium ions at energy of 400 keV and dose of 5×10 15 ions/cm 2 were implanted into silicon single crystals at room temperature at the angles of 0,45 and 60.The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique.The results show that the measured values were in good agreement with those obtained from the prediction of TRIM’98 (Transport of Ions in Matter) and SRIM2006 (Stopping and Range of Ions in Matter) codes. 相似文献
7.
We report on the structural and optical characterization of waveguides formed in YbVO4 crystals by Cu2+-ion implantation with an energy of 3.0 MeV and doses of 3.0×1014-1.0×1015 ions/cm2. The damage properties are determined by RBS/Channeling measurements with the help of simulation code RUMP. The m-line method is used to characterize the dark-mode spectroscopy in the planar waveguides. According to the reconstructed refractive index profile of the waveguide cross section, a numerical simulation is carried out to investigate the confinement of the light in the waveguides based on the beam propagation method. 相似文献
8.
Characterization of tetragonal distortion in a thick Al0.2Ga0.8N epilayer with an AIN interlayer by Rutherford backscattering/channeling
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An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire (0001) substrate with a thick (〉 1 μm) GaN intermediate layer. The Al composition was determined by Rutherford backscattering (RBS). Using the channeling scan around an off-normal [1213] axis in the (1010) plane of the Al0.2Ga0.8N layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is investigated. The results show that eT in the high-quality Al0.2Ga0.8N layer is dramatically released by the AIN interlayer from 0.66% to 0.27%. 相似文献
9.
利用离子注入掺杂技术设计、制作半导体集成器件时,了解离子注入半导体材料的射程分布和横向离散规律等是很重要的.用200—500 keV能量的铒(Er)离子注入SOI(silicon-on-insulator,绝缘体上的硅)样品中,利用卢瑟福背散射(RBS)技术研究了剂量为2×1015cm-2的Er离子注入SOI的平均投影射程Rp和射程离散△Rp,把测出的实验值和SRIM软件得到的理论计算值进行了比较,发现平均投影射程Rp的实验值跟理论计算值符合较好,射程离散△Rp的实验值和理论计算值差别大一些. 相似文献
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12.
Characterization of tetragonal distortion in a thick Al_(0.2)Ga_(0.8)N epilayer with an AlN interlayer by Rutherford backscattering/channeling
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An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire(0001) substrate with a thick(> 1 μm) GaN intermediate layer. The Al composition was determined by Rutherford backscattering(RBS). Using the channeling scan around an off-normal [1213] axis in the(1010) plane of the Al0.2Ga0.8N layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is investigated. The results show that eTin the high-quality Al0.2Ga0.8N layer is dramatically released by the AlN interlayer from 0.66% to 0.27%. 相似文献
13.
采用金属有机化合物气相淀积法在(0001)取向的蓝宝石衬底上生长一层 大约20 nm厚的AlN缓冲层, 在缓冲层上生长大约2 μm厚、 晶体质量良好的AlxGa1-xN外延层, 通过深紫外光致发光法测量发光峰的能量Eg 判断外延层中铝含量的均匀性, 取样品均匀性良好的氮铝镓外延片进行卢瑟福背散射(RBS)实验, 通过两个高能离子束实验室分别进行RBS随机谱分析, 每个实验室测量六个样品, 由分析软件拟合随机谱获得外延层中的xAl. 并对样品的均匀性、堆积校准、计数统计、散射角、离子束能量与阻止截面 等影响测量结果准确性的不确定度来源进行分析. 结果表明, 采用入射离子4He, 能量为2000 keV, 散射角为165° 时, 氮铝镓外延片中铝含量(x=0.8) 的测量不确定度为2.0%, 包含扩展因子k=2.
关键词:
氮铝镓
卢瑟福背散射
测量不确定度
金属有机化合物气相淀积法 相似文献
14.
用金属蒸汽真空弧源,以40kV加速电压对纯锆样品分别进行了1016—1017/cm2的钇、镧离子注入,注入温度约为130℃.然后对注入样品进行表面分析.x射线光电子能谱分析表明,注入的钇以Y2O3形式存在,镧以La2O3形式存在.俄歇电子能谱表明,纯锆基体表面的氧化膜厚度随着离子注入剂量的增加而增加,当离子注入剂量达到1017/cm2时,氧化膜的厚度达到了最大值.卢瑟福背散射显示镧层的厚度约为30nm,同时直接观察到当离子注入剂量为(La+Y)1017/cm2时,纯锆样品表面发生了严重的溅射.
关键词:
纯锆
钇和镧离子共注入
卢瑟福背散射
x射线光电子能谱 相似文献
15.
F. ChengTao Fa Shude Yao Chen-Jun WuHao-Hsiung Lin Zhe Chuan Feng 《Physica B: Condensed Matter》2011,406(17):3219-3221
Rutherford backscattering/channeling spectrometry and synchrotron X-ray diffraction are employed to characterize the structural properties of the InAsPSb epilayer grown on the InAs substrate. The results indicate that a 975-nm thick InAs0.668P0.219Sb0.113 layer has a quite good crystalline quality (χmin=6.1%). The channeling angular scan around an off-normal 〈1 1 1〉 axis in the (0 1? 1) plane of the sample is used to determine the tetragonal distortion eT, which is caused by elastic strain in the layer. The results show that the InAsPSb layer is subjected to an elastic strain at the interfacial layer, and the strain decreases gradually moving towards the near-surface layer. It is expected that an epitaxial InAsPSb layer with the thickness of around 1700 nm will be fully relaxed (eT=0). The magnitude difference of eT deduced from angular scans and X-ray diffraction implies some structure (like dislocations) may play a role. 相似文献
16.
报导了在镍薄膜中掺入少量Mo提高了镍硅化物的热稳定性.结果表明,经650— 800℃快速热 退火形成的Ni(Mo)Si硅化物薄膜电阻值较低,约为2.4(Ω/□).XRD分析表明薄膜中只存在 NiSi相,而没有NiSi2生成.由吉布斯自由能理论分析表明在Ni薄膜中掺人5.9 %Mo对改善 Ni硅化物热稳定性起到至关重要的作用.经650—800℃快速热退火后的 Ni(Mo)Si/Si肖特基 二极管电学特性良好,势垒高度ΦB为0.64—0.66eV,理想因子接近于1,更 进一步证明掺少量的Mo能够改善NiSi薄膜的热稳定性.
关键词:
镍硅化物
快速热退火
x射线衍射分析
卢瑟福背散射 相似文献
17.
Muscovite mica detectors were irradiated with the ions: 19F of 47.5 MeV, 24Mg of 57 MeV, 28Si of 28 and 74 MeV, 32S of 32 and 74 MeV, 63Cu of 78.75 MeV and with neutron induced uranium fission fragments. Using optical microscopy, after an appropriate chemical etching, two characteristic etched track structure patterns were observed: a rhombic pyramid terrace structure for the Mg, Si and S ions, and a rhombic prism structure for the Cu ions and fission fragments. The use of these etched track patterns to discriminate two groups of ions between them, for the energy range covered in this work, is proposed. 相似文献
18.
This report describes the amino functionalisation of the surface of plasma enhanced chemically vapour deposited silica films (PECVD-SiO2), which were coated onto titanium substrates. Amino groups were linked to PECVD-SiO2 via 3-aminpropyl triethoxysilane (APTES). We showed that the APTES functionalised PECVD-SiO2 surfaces contained a high packing density of amino groups (67-92 NH2 groups per nm2), indicative of a multilayered and highly cross-linked APTES film. 65-66% of the original surface concentration of APTES was retained on the PECVD-SiO2 surface after incubation under physiological conditions, indicating that APTES films are relatively stable on PECVD-SiO2 in these environments. The stability of the amino groups obtained on PECVD-SiO2 in this study is much higher compared to other hydroxyl-bearing materials, such as titanium. Therefore, PECVD-SiO2 films may find use as functional biomaterial coatings and as intermediate adhesion layers in silanisation processes. 相似文献
19.
InFeP layers are prepared by ion implantation of InP with 100-keV Fe+ ions to a dose of 5 ×10^16 cm-2 and investigated by optical, magnetic, and ion beam analysis measurements. Photoluminescence measurements show a deep-level peak at 1.035 eV due to Fe in InP and two exciton-related luminescences at 1.426 eV and 1.376 eV in the implanted samples annealed at 400℃. Conversion electron Mossbauer spectroscopy reveals a doublet corresponding to Fe3+ ions in the indium sites. Atomic force microscopy and magnetic force microscopy show that magnetic clusters are formed in the annealing process. The magnetization-field hysteresis loops show ferromagnetic properties persisting up to room temperature with a coercive field of 100 0e (10e = 79.5775 A-m-1), saturation magnetization of 4.35 × 10-5 emu, and remnant magnetization of 4.4× 10 6 emu. 相似文献
20.
The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced
chemical vapour deposition and the fabrication of solar cells
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This paper reports that the intrinsic microcrystalline silicon ($\mu
$c-Si:H) films are prepared with plasma enhanced chemical vapour
deposition from silane/hydrogen mixtures at 200\du\ with the aim to
increase the deposition rate. An increase of the deposition rate to
0.88\,nm/s is obtained by using a plasma excitation frequency of
75\,MHz. This increase is obtained by the combination of a higher
deposition pressure, an increased silane concentration, and higher
discharge powers. In addition, the transient behaviour, which can
decrease the film crystallinity, could be prevented by filling the
background gas with Hchemical vapour deposition,
plasma deposition, solar cells, crystallinity Program supported by the State Key
Development Program for Basic Research of China (Grant No
2006CB202601), and Basic Research Project of Henan Province in China
(Grant No 072300410140). 7280N, 7830G, 8115H This paper reports that the intrinsic microcrystalline silicon ($\mu
$c-Si:H) films are prepared with plasma enhanced chemical vapour
deposition from silane/hydrogen mixtures at 200\du\ with the aim to
increase the deposition rate. An increase of the deposition rate to
0.88\,nm/s is obtained by using a plasma excitation frequency of
75\,MHz. This increase is obtained by the combination of a higher
deposition pressure, an increased silane concentration, and higher
discharge powers. In addition, the transient behaviour, which can
decrease the film crystallinity, could be prevented by filling the
background gas with Hchemical vapour deposition,
plasma deposition, solar cells, crystallinity Program supported by the State Key
Development Program for Basic Research of China (Grant No
2006CB202601), and Basic Research Project of Henan Province in China
(Grant No 072300410140). 7280N, 7830G, 8115H This paper reports that the intrinsic microcrystalline silicon ($\mu
$c-Si:H) films are prepared with plasma enhanced chemical vapour
deposition from silane/hydrogen mixtures at 200\du\ with the aim to
increase the deposition rate. An increase of the deposition rate to
0.88\,nm/s is obtained by using a plasma excitation frequency of
75\,MHz. This increase is obtained by the combination of a higher
deposition pressure, an increased silane concentration, and higher
discharge powers. In addition, the transient behaviour, which can
decrease the film crystallinity, could be prevented by filling the
background gas with Hchemical vapour deposition,
plasma deposition, solar cells, crystallinity Program supported by the State Key
Development Program for Basic Research of China (Grant No
2006CB202601), and Basic Research Project of Henan Province in China
(Grant No 072300410140). 7280N, 7830G, 8115H This paper reports that the intrinsic microcrystalline silicon ($\mu
$c-Si:H) films are prepared with plasma enhanced chemical vapour
deposition from silane/hydrogen mixtures at 200\du\ with the aim to
increase the deposition rate. An increase of the deposition rate to
0.88\,nm/s is obtained by using a plasma excitation frequency of
75\,MHz. This increase is obtained by the combination of a higher
deposition pressure, an increased silane concentration, and higher
discharge powers. In addition, the transient behaviour, which can
decrease the film crystallinity, could be prevented by filling the
background gas with Hchemical vapour deposition,
plasma deposition, solar cells, crystallinity Program supported by the State Key
Development Program for Basic Research of China (Grant No
2006CB202601), and Basic Research Project of Henan Province in China
(Grant No 072300410140). 7280N, 7830G, 8115H This paper reports that the intrinsic microcrystalline silicon ($\mu
$c-Si:H) films are prepared with plasma enhanced chemical vapour
deposition from silane/hydrogen mixtures at 200\du\ with the aim to
increase the deposition rate. An increase of the deposition rate to
0.88\,nm/s is obtained by using a plasma excitation frequency of
75\,MHz. This increase is obtained by the combination of a higher
deposition pressure, an increased silane concentration, and higher
discharge powers. In addition, the transient behaviour, which can
decrease the film crystallinity, could be prevented by filling the
background gas with H$_{2}$ prior to plasma ignition, and selecting
proper discharging time after silane flow injection. Material
prepared under these conditions at a deposition rate of 0.78\,nm/s
maintains higher crystallinity and fine electronic properties. By
H-plasma treatment before i-layer deposition, single junction $\mu
$c-Si:H solar cells with 5.5{\%} efficiency are fabricated. 相似文献