B掺杂量对TiO2纳米粉体的结构与光催化性能影响研究

采用溶胶凝胶法制备了不同量B掺杂TiO2纳米粉体,采用X射线衍射(XRD)、透射电子显微镜(TEM)、X射线光电子能谱(XPS)、傅里叶变换红外吸收光谱(FT-IR)及紫外-可见漫反射光谱(UV-Vis)等技术对催化剂进行了表征.结果表明:B部分掺入到TiO2晶格间隙中形成B-O-Ti键,部分以B2O3的形式存在,随着B掺杂量的增加,进入晶格的B比例减少;B掺杂有效抑制了TiO2由锐钛矿相向金红石相的转变,掺杂样品经650℃煅烧后仍为锐钛矿结构,随B掺杂量的增加,其晶粒变小;B掺杂使得TiO2表面羟基量显著增加,且掺杂量越大表面羟基量越多;各掺杂样品的吸收边带没有明显红移,光吸收强度较未掺杂TiO2稍弱,且随着B掺杂量的增加,光吸收能力呈递减趋势.可见光催化降解亚甲基蓝结果表明,B掺杂大大提高了TiO2的光催化活性,这与掺B后晶粒变小,表面羟基量显著增加有关;当B掺杂质量百分数为1.0;时,B/TiO2可见光催化活性最高,达93.40;.     

铁、氮共掺杂二氧化钛的水热法合成及其光催化性能研究

为了研制分解汽车尾气路面TiO2涂层,以钛酸丁酯为Ti源、硝酸铁为Fe源,尿素为N源,采用水热法合成了Fe-N共掺杂TiO2((Fe,N)-TiO2)纳米粉体.采用X射线衍射仪、透射电子显微镜、X射线光电子能谱、紫外-可见光谱仪等对样品进行了表征.结果表明合成的(Fe,N)-TiO2样品均为锐钛矿晶型,样品的平均粒径大小约为7.2nm.Fe、N共掺杂对TiO2的晶体结构没有明显影响,Fe和N离子都已经进入TiO2晶格.相对于纯TiO2而言,随着Fe和N离子的掺入,(Fe,N)-TiO2样品在可见光范围内吸光强度明显增强,光吸收带边发生红移.以可见光光催化降解亚甲基蓝(MB)研究了样品的光催化性能,(Fe,N)-TiO2对MB的降解能力较纯TiO2和N-TiO2有明显提高,说明Fe和N离子共掺杂会产生协同效应,使(Fe,N)-TiO2样品在可见光区域的光催化活性得到显著提高.     

稀土Sm掺杂对纳米TiO2结构和可见光催化性能的影响

采用溶胶-凝胶法制备了纯TiO2和稀土Sm掺杂TiO2纳米粉体( Sm-TiO2),通过XRD、XPS、FT-IR、UV-Vis-DRS、PL和Nano-sizer纳米粒度仪等对样品进行表征,以亚甲基蓝( MB)的光催化降解为探针反应,探讨稀土Sm掺杂对纳米TiO2的结构和可见光催化性能的影响。结果表明,Sm掺入TiO2后在表面存在Sm3+和Sm2+两种价态, Sm掺杂抑制了TiO2从锐钛矿向金红石的相转变,阻碍纳米晶粒生长,增加了纳米粉体表面羟基含量;适量的Sm掺杂能使TiO2吸收光谱的阈值波长红移,有效降低光生e-/h+的复合率,提高TiO2光催化活性。热处理温度500℃时,掺杂1.0wt;Sm的纳米TiO2样品在普通日光灯下对MB在6 h内的光催化降解效率达97;,明显高于同等条件下Degussa公司产品P25的降解率56;。     

Sm,C掺杂改性纳米TiO2及其可见光催化性能研究

通过溶胶-凝胶法制备了Sm、C分别单掺杂和共掺杂纳米TiO2光催化剂,采用XRD、FESEM、TEM、XPS、UV-Vis-DRS、PL、Nano-sizer纳米粒度分析仪等对样品进行表征,以光催化降解亚甲基蓝(MB)作为评价模型,研究了不同样品对MB的光催化降解效果.结果表明,Sm单掺杂抑制了TiO2从锐钛矿向金红石的相转变,抑制晶粒长大,C的单掺杂则促进了TiO2的相转变,Sm或(和)C的掺杂均能细化TiO2晶粒,拓展TiO2在可见光区的光谱响应范围,降低光生e-/h+对的复合几率.Sm、C的掺杂均能有效提高TiO2的光催化活性,且共掺杂时存在协同效应,当n(Sm)∶n(C)∶n(Ti)=0.01∶0.3∶1、热处理温度500 ℃时,Sm/C-TiO2样品在普通日光灯下催化降解MB的一级表观速率常数是相同条件下纯TiO2的4.3倍.     

可见光响应氮掺杂TiO2制备与性能表征

采用水热法制备了可见光响应的氮掺杂TiO2光催化剂,利用XRD、SEM、XPS、UV-vis对样品结构、形貌和光谱等性质进行表征.研究结果表明:氮掺杂抑制晶粒长大,促进晶格畸变;氮进入TiO2晶格中,引起TiO2光催化剂的激发,吸收光谱向低能方向移动.以降解甲基橙为模型反应,研究样品的光催化性能;以对苯二甲酸作为·OH自由基捕获剂,利用化学荧光技术研究光催化反应体系中·OH自由基生成量.结果表明:与纯TiO2相比,氮掺杂样品具有较高的光催化活性.这与下列因素有关:氮掺杂样品具有较小的晶粒尺寸,有利于促进光生电荷的分离与相界面上电荷转移效率,降低TiO2能隙并使吸收光谱红移.在实验条件下,光催化性能随n(N/Ti)比值的增大而增强;羟基自由基的生成速率与光催化活性规律一致,即·OH的生成速率越大,光催化活性越高.     

铋铁共掺纳米TiO2复合薄膜的制备及光催化性能

本文以钛酸丁酯、硝酸铋、硝酸铁为主要原料,采用溶胶-凝胶法制备了铋铁共掺的纳米TiO2复合薄膜.用XRD、UV-VIS、SEM及降解率等方法对样品进行了表征.以甲基橙为降解物,考察Bi3+和Fe3+掺杂对TiO2复合薄膜催化剂的光催化活性影响及其机理研究.结果表明Bia+和F3+掺杂后,纳米TiO2复合薄膜光催化活性有了明显的提高.     

Ag/TiO2的制备及光催化性能研究

以钛酸丁酯为钛源,采用溶胶-凝胶法制备了Ag掺杂纳米TiO2,结合XRD、TEM、Uv-vis等测试手段,对样品的结构和性能进行了表征.以甲基橙溶液为目标降解物,探讨了Ag掺杂纳米TiO2的光催化活性,分析了Ag掺杂纳米TiO2提高光催化性能的机理.结果表明,Ag掺杂使TiO2晶粒减小,拓展了TiO2的光谱响应范围,降低了光生电子和空穴的复合几率;Ag掺杂后,TiO2光催化剂的吸收光谱向可见光区发生红移.Ag掺杂量为n(Ag)∶n(TiO2)=0.08;,紫外光下240 min,Ag掺杂纳米TiO2前后材料对甲基橙溶液去除率由60.3;提高到83.1;.     

TiO2/SiO2纤维的表征及其光催化活性

本文采用溶胶-凝胶法及离心甩丝,以TiCl4为钛源、乙酰丙酮为螯合剂成功制备了TiO2/SiO2纤维,并采用XRD 、FE-SEM、FT-IR和DSC -TG等手段对样品结构和性能进行表征.结果表明掺入SiO2可以抑制TiO2晶粒长大和晶型转变,700℃热处理后,未掺SiO2和掺15wt; SiO2的样品晶粒大小分别为32.4 nm和7.6 nm.TiO2/SiO2纤维直径为10～20μm,且表面含有大量纳米气孔.以活性艳红X-3B溶液为降解对象,研究了掺杂量、热处理温度对纤维光催化活性的影响,表明最优的方案为掺15wt; SiO2、热处理制度为700℃/2 h.     

硅铝共掺杂对TiO2薄膜结构及性能的影响

采用非水解溶胶-凝胶法制备了Si、Al共掺杂的TiO2薄膜.应用X射线衍射、紫外可见分光光度计研究了Si、Al掺杂对TiO2薄膜晶型转变、晶粒尺寸、光吸收性能及光催化性能的影响.结果表明:适量引入Si、Al后,可显著提高1000℃热处理后TiO2薄膜的光催化活性;当Si/Ti物质的量比为0.2时,薄膜由于混晶结构光催化活性最佳;Si、Al共掺杂能抑制TiO2的晶型转变及TiO2的晶粒生长,且Si、Al共掺杂的抑制作用比单一Si掺杂更有效;当Si/Ti物质的量比为0.15、Al/Ti物质的量比为0.05时,TiO2锐钛矿向金红石的转变温度从750℃提高到1200℃.     

溶胶-凝胶法制备S掺杂TiO2纳米粉体的光催化性能

本研究采用溶胶-凝胶法制备了S掺杂TiO2纳米粉体.采用X射线衍射(XRD)、热重差热(TG-DTA)、傅里叶变换红外光谱(FT-IR)、透射电子显微镜(TEM)、能量弥散X射线能谱(EDS)及X射线光电子能谱(XPS)等测试手段对其进行了表征,以亚甲基蓝为模拟污染物,评价了不同热处理条件下的粉体在可见光下的光催化活性.结果表明:S掺杂对TiO2由锐钛矿型向金红石型的转变有抑制作用,但对其微观形貌没有影响;部分S进入TiO2晶格间隙形成Ti-O-S键,部分S以SO2-4的形式吸附于TiO2表面,S含量约为0.3at;;S掺杂TiO2纳米粉体具有较高的可见光催化活性,当硫酸钠加入量为10;,550 ℃煅烧1 h的S/TiO2样品的光催化活性最佳,在可见光下对亚甲基蓝的2 h降解率由未掺杂的74.12;提高至86.15;.     

ZnO:Sb掺杂机理的第一性原理研究

为了研究ZnO:Sb的掺杂机理,本文运用第一性原理密度泛函理论计算了理想纤锌矿ZnO和SbO 、SbZn 、SbZn-2VZn三种Sb掺杂ZnO晶体模型的几何结构、能带结构和电子态密度.计算结果表明:sb的掺人使得晶格发生不同程度的膨胀,其中以SbZn-2VZn复合缺陷模型的膨胀最小,键长最短,说明此结构的化学稳定性最高.通过能带和态密度的分析可知,ShO和SbZn模型存在不合理性,而SbZn-2VZn复合缺陷中的VZn可以使价带产生非局域化空穴载流子.定量计算进一步确认了SbZn-2VZn构型的可填充电子数最多,合理解释了晶体导电性的提高.形成能计算表明,在富氧条件下SbZn-2VZn的形成能最低,说明在富氧条件下掺杂Sb更有利于实现ZnO的p型化.     

Growth and evaluation of lanthanoids orthoniobates single crystals processed by a miniature pedestal growth technique

Optimized conditions for the growth of lanthanoids orthoniobates (LnNbO₄, Ln = lanthanide elements) single crystal minirods by a floating zone technique were investigated. Adequate atmospheres and pulling to feeding speed ratios to grow these materials were determined. Emphasis is given to the study of LaNbO₄ because of their more favorable growth conditions and crystalline quality. This material can be efficiently doped with rare earth elements such as erbium. It grows with high crystallinity and its preferential growth direction is [1 1 0]. A preliminary evaluation of optical properties of Er³⁺‐doped LaNbO₄ single crystal under the Judd‐Ofelt formalism indicates spectral parameters Ω_t close and even larger than for Er³⁺ ions in YVO₄. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

镁、溴共掺杂对锂离子电池正极材料LiMn2O4电化学性能的影响

通过溶胶凝胶法制备出LiMn2O4和LiMn1.92 Mg0.08O3.84Br0.16锤离子电池正极材料,并用XRD、SEM、XPS、充放电测试和CV对其结构、形貌、化学成份以及电化学性能进行了研究.结果表明,Mg、Br的掺杂未改变LiMn2O4的结构.在0.5C倍率下,LiMn1.92Mg0.08O3.84Br0.16的放电比容量为119 mAh/g,与LiMn2O4相比,其首次放电比容量提高了3.6;,循环100次后,LiMn1.92Mg0.08O3.84Br0.16的容量保持率高达86.9;.在5C倍率下,LiMn192Mg0.08O384Br0.16的放电比容量为91.1 mAh/g,比LiMn2O4提高了24.1;.实验表明,Mg、Br共同掺杂提高了LiMn2O4的放电比容量,并明显改善其循环稳定性和倍率性能,从而获得了较好的综合电化学性能.     

Influence of Host Lattice in Interstital Dopant Sites: EPR Studies on Cu (II) Doped Sarcosine Cadmium Bromide Single Crystals

EPR study of Cu(II) doped in sarcosine cadmium bromide single crystals are carried out at room temperature. The impurity ions occupy the interstitial position in this crystal lattice. Crystalline field around the Cu(II) ion in this low symmetry crystal is rhombic. The transitions arise from a single paramagnetic site with g_xx = 2.1082, g_yy = 2.0005, g_zz = 2.2071, and A_xx = ‐64 x 10^‐4 cm^‐1, A_yy = ‐23 x 10^‐4 cm^‐1, A_zz =‐185 x 10^‐4 cm^‐1. The ground state is an admixture of dx2‐y2 and dz2 states. The observed molecular orbital coefficient value a2 = 0.85 reveals a moderate covalency of the s bonding and b2 = 0.967 indicates the weak pi bonding. A strong interaction between Cu(II) and nitrogen ligands is found to exist.     

Crystal Chemistry of Nanotubes Lattices

Abstract

X-ray diffraction profiles of pristine and hypothetical “intercalated” crystalline bundles of single-wall carbon nanotubes are computed and compared with experiment. The pristine case is complicated by finite size effects, tube diameter dispersion and the cylindrical form factor for uncorrelated tube rotations. Experimental profiles of “doped” samples are not in agreement with simulations based on 2-D ordered sublattices except at very low doping levels.     

Electrochemical Doping of Single Wall Carbon Nanotubes with Lithium

Abstract

Reversible insertion of Li into purified single wall carbon nanotubes was achieved electrochemically. Galvanostatic charge-discharge and cyclic voltammetry indicated that there is no well-defined redox potential for Li insertion or removal in the nanotube lattice. The Li reversible capacity was found to be 460 mA.h/g, significantly higher than the theoretical value for graphite. In-situ X-ray diffraction revealed an irreversible loss of the 2-D triangular lattice upon doping. In-situ resistivity measurements presented a 20-fold decrease in resistance upon doping, reversible upon undoping.     

掺氮铌酸锂薄膜的制备及基本物性研究

采用激光脉冲沉积与射频等离子体相结合的方法(PLD-RF),在蓝宝石衬底上一步沉积了掺氮铌酸锂(LiNbO3:N)薄膜.采用X射线衍射仪(XRD)、X射线光电子能谱仪(XPS)和紫外-可见-红外光谱仪(UV-Vis-NIR)对LiNbO3:N的晶格结构、掺杂含量及价态、光学性质进行了研究.结果表明铌酸锂薄膜沿(006)方向择优生长,其中氮的原子含量为2.04;,替代氧原子的位置,N的掺入有效的窄化了LiNbO3的带隙,使其紫外-可见吸收光谱的吸收边出现红移,并且在铌酸锂禁带中引入了杂质能级(Ev),能级深度为2.7 eV.     

Electrical switching studies on Ge-Te-Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltages

Bulk Ge₁₇Te_83−xTl_x glasses (0 ≤ x ≤ 13), have been found to exhibit memory type electrical switching. The switching voltages (also known as threshold voltage — V_th) of Ge₁₇Te_83−xTl_x glasses are found to decrease with increasing thallium content. The rate of decrease of V_th is greater at lower concentrations and V_th falls at a slower rate for higher thallium concentrations (x ≥ 6).The addition of thallium to the Ge-Te network fragments the covalent network and introduces ionic nature to it; the reduction in network connectivity leads to the decrease in switching voltages with thallium content. The decrease in the glass transition temperatures of Ge₁₇Te_83−xTl_x glasses with increasing thallium concentration supports the idea of decrease in network connectivity with Tl addition. The more metallic nature of Tl also contributes to the observed reduction in the switching voltages of Ge₁₇Te_83−xTl_x glasses with Tl content.Further, there is an interesting correlation seen between the threshold voltage V_th and the average bond energy, as a function of Tl content. In addition, the switching voltages of Ge₁₇Te_83−xTl_x glasses have been found to decrease with sample thickness almost linearly. The set-reset studies indicate that the Ge₁₇Te₈₁Tl₂ sample can be switched for more than 10 cycles, whereas other glasses could not be reset beyond two switching cycles.     

Electrical and optical properties of Co doped TlGaS2 crystals

In this study, Co doped TlGaS₂ single crystals which belongs to the class of A^IIIB^IIIX₂^VI have been investigated by means of XRD, temperature dependent dark and illuminated conductivity, Space Charge Limited Currents and absorption measurements. The room temperature conductivity and trap concentration values were about 10^‐8 (Ω‐cm)^‐1 and 7.5 × 10¹³ cm^‐3, respectively. From the temperature dependent conductivity measurements, two activation energies namely 271 and 12 meV have been determined in the high and low temperature regions, respectively. The trap level at 271 meV that was determined by the dark temperature dependent conductivity measurement has also been verified by Space Charge Limited Currents analysis. The absorption measurements have showed that the layered compound had indirect and direct band gaps and the values were determined to be 2.49 and 2.56 eV, respectively. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

N型半导体金刚石的研究现状与展望

作为半导体材料的金刚石具有宽的禁带宽度和高的热导率、介质击穿场强等优异性质,因此其应用前景广阔.P型金刚石发展较N型金刚石成熟.因为缺乏可实用的N型金刚石材料,这使得金刚石半导体器件的应用难以实现.因此N型半导体金刚石成为研究者关注的焦点.论文从掺杂元素和制备方法两方面详细介绍了国内外N型金刚石的研究现状.硼与磷或硫元素共掺杂获得N型金刚石的研究取得了较大进展;利用化学气相沉积法和离子注入法制备N型半导体金刚石研究较多且取得了一定进展.高压高温下的温度梯度法便于掺杂调控金刚石性能,因而利用该法合成N型半导体金刚石大单晶值得尝试.