AlN-Y2O3配比对SiC耐磨材料结构和性能的影响

在AlN-Y2O3添加量为6wt;的前提下,将摩尔比分别为10∶90、20∶80、30∶70和40∶60的AlN、Y2O3引入SiC耐磨材料中,于氧化气氛下经1600℃保温3h烧成,研究了AlN、Y2O3配比对SiC耐磨材料结构和性能的影响.结果表明:AlN、Y2O3配比对SiC耐磨材料的性能影响较大,当其为30∶70时,SiC耐磨材料的性能较优,其体积密度和显气孔率分别为2.66 g/cm3和3.95;,磨损量为0.11 g/min,硬度和抗折强度分别为2774 HV和185 MPa.SiC耐磨材料较优异的烧结性能和力学性能可归因于新生成的Y2Si2O7和3Al2O3·2SiO2充填于SiC颗粒间所起的强化作用.     

稻壳灰制备Si3N4/SiC复合粉体的研究

本文主要研究不同的SiO2∶C比例对所制备Si3N4/SiC复合粉体组成的影响.采用生物质能电厂所产生的工业废弃物稻壳灰和炭黑为原料,以稻壳灰中的SiO2为标准与炭黑配成不同比例的粉料,在氮气气氛下经1550℃保温3h热处理.采用X射线衍射(XRD)和扫描电子显微镜(SEM)分析烧后试样的物相组成和显微结构.结果表明:当SiO2∶C为5∶6时得到的产物为Si3N4/SiC复合粉体;当SiO2∶C为5∶2和5∶3时,得到产物的组成为SiC、O'-Sialon和β-Si3N4.     

微波水热法合成BaFe12O19磁性粉体

以Fe(NO3)2.9H2O、Ba(NO3)2为原料,NaOH为矿化剂,采用微波水热法合成了BaFe12O19六角磁性粉体。采用X射线衍射(XRD)、扫描电子显微镜(SEM)、综合热分析仪(DSC/TG)以及振动式样磁强计(VSM)等分析测试方法对所制备粉体性能进行了表征。研究了n(Ba2+)/n(Fe3+)、反应时间和煅烧温度对样品物相、显微结构和磁性能的影响。结果表明:当n(Ba2+)/n(Fe3+)为1∶8,pH为13,200℃微波水热反应60 min,820℃煅烧后即可制得BaFe12O19磁性粉体,此粉体的饱和磁化强度为71.9 emu/g,剩余磁化强度为43.8 emu/g和矫顽力4145 Oe。     

矿化剂浓度和反应时间对微波水热合成高纯BiFeO3粉体的影响

以Fe(NO3)3·9H2O和Bi(NO3)3·5H2O为反应原料,KOH为矿化剂,采用微波水热法制备高纯的单相BiFeO3粉体。研究了KOH浓度和微波水热反应时间对BiFeO3粉体纯度和相变的影响。研究表明,当KOH浓度高于6 mol/L时能合成出纯相BiFeO3粉体,随着水热矿化剂浓度的提高粉体形貌逐渐由准立方演变为截角立方,最后趋于类八面体结构的团聚体。当延长微波水热反应时间,BiFeO3粉体逐渐由三方相结构(R3m)向六方相结构(R3c)转变。当KOH浓度为10 mol/L,Bi3+/Fe3+摩尔比为1,微波水热时间为30 min,反应温度在200℃就可制备出高纯BiFeO3粉体,其饱和磁化强度约为0.075 emu/g。     

晶硅切割废粉为原料的反应烧结Si3N4结合SiC复相陶瓷的工艺研究

以晶硅切割废料Si粉和SiC为原料,Y2O3-Al2O3-Fe2O3为复合烧结助剂,反应烧结法制备低压铸造升液管用Si3N4/SiC复相陶瓷材料.设计L9(34)正交实验,研究了原料中Si、助剂Al2O3、Y2O3和Fe2O3的含量对陶瓷材料力学性能的影响和优化.采用X射线衍射(XRD)和扫描电镜(SEM)对复合材料的相组成、断口形貌进行分析.结果表明,反应烧结后试样生成Si3N4结合SiC晶粒为主相的烧结体,并含有少量SiALON及未反应的Si.Si含量对力学性能的影响最为显著,通过对正交试验的验证,20wt; Si、3.2wt; Al2O3、0.8wt;Fe2O3和2wt; Y2O3时烧结体抗弯强度最高.     

基于XRD与差热-热重探究Ba1.55Ca0.45SiO4晶体的合成机理

以正硅酸乙酯、乙酸钡、乙酸钙为原料,通过液相混溶的方式将三者均匀混合获得预处理粉体,而后利用XRD与DTA-TG研究固相合成法过程中预处理粉体中各物质间的相互反应,同时利用XRD探究不同的升温速率、不同的煅烧工艺以及保温时间对合成高膨胀系数Ba1.55Ca0.45SiO4晶体的影响.结果 表明,在固相反应的过程中,预处理粉体中的乙酸盐首先分解生成相对应的碳酸盐,同时可能形成相对应的BaCa(CO3)2固溶体;随着温度升高,低熔点的碳酸盐开始分解,当温度升高至1 063℃时,BaCO3与SiO2反应生成Ba2SiO4晶体,继续升温至1 144℃时,Ca2+固溶进入Ba2SiO4晶体形成Ba1.55Ca0.45SiO4晶体;另外,将预处理粉体二次煅烧或压制成条状样品进行加热时,粉体中的BaCO3难以完全参与反应,而当粉体自然堆积、以1℃/min的升温速率加热至1 250℃保温5h后可获得平均线性热膨胀系数为12.63×10-6 K-1的Ba1.55Ca0.45SiO4晶体.     

熔盐法制备CuFeMnO4光吸热材料的研究

以KOH、KNO3为熔盐,Cu(NO3)2·3H2O、Fe(NO3)3·9H2O、50wt; Mn(NO3)2为原料,研究了金属离子配比及合成温度对熔盐法制备CuFeMnO4粉体的影响,采用XRD和FESEM进行物相及微观形貌的测试分析,利用自行设计测试装置对CuFeMnO4涂层的吸热性能进行评价.研究结果表明,CuFeMnO4粉体主晶相为尖晶石型,当金属离子配比为Fe3+∶ Cu2+∶ Mn2+=1∶0.5∶1时,可有效地抑制杂相的生成;合成温度为700℃时,晶体成核均匀,晶粒尺寸较小.该粉体制成涂料涂覆在铝板上,可使铝板的吸热温度提高22℃,增强了吸热效果.     

Bi4Si3O12晶体的水热法生长研究

采用水热法,以固相烧结的化学计量比(2Bi2 O3∶3SiO2)的玻璃态Bi4Si3O12做培养料,以NaOH溶液为矿化剂,研究了在水热体系下形成Bi4Si3O12晶体的相区.结果发现,在生长温度为380 ～ 500℃,矿化剂浓度为1.5 ～4 mol/L时,自发成核生成的晶粒均为Bi4Si3O12和Bi12SiO20两种物相.通过在矿化剂溶液中外加一定量的SiO2,得到完全纯相的Bi4Si3O12,并生长出尺寸超过8 mm的Bi4Si3O12单晶.无论在矿化剂溶液中是否添加SiO2,生长的Bi4Si3O12都呈四面体形状,显露面以{112}面族为主,Bi4Si3O12晶体的这一结晶习性能够用周期性键链(PBC)理论予以解释.     

FeYO3/Y2O3:1;Eu3+,1;Tb3+粉体的制备及其磁性研究

以FeCl2和KOH为原料采用水热法制备Fe3 O4粉体,然后以氧化钇、氧化铕和氧化铽为原料制备Eu3+,Tb3+共掺杂的Y2 O3荧光粉体,并通过XRD对粉体的物相结构进行分析;然后以三聚氰胺以及所制备的Fe3 O4和Y2 O3:Eu3+,Tb3+粉体为原料,采用微波烧结法在Ar气氛下制备FeYO3/Y2 O3:1;Eu3+,1;Tb3+粉体,并对其磁学性能进行了研究.研究结果表明:当Fe3 O4,Y2 O3:1;Eu3+,1;Tb3+和三聚氰胺比例为1:3:4时,所制备的FeYO3/Y2 O3:1;Eu3+,1;Tb3+粉体的磁力饱和强度为12.299 emu·g-1,磁力最强.     

掺杂稀土铁磁性纳米复合粉体的制备

采用水热法以FeCl2和KOH为原料制备Fe3 O4粉体,以氧化钇、氧化铕和氧化铽为原料制备Y2 O3:1;Eu3+,5;Tb3+粉体,然后以Fe3 O4粉体,Y2 O3:1;Eu3+,5;Tb3+粉体和三聚氰胺为原料,采用微波烧结法在Ar气气氛下制备FeYO3/Y2 O3:1;Eu3+,5;Tb3+复合粉体,利用XRD衍射仪对各种粉体的结构进行分析,利用扫描电镜对复合粉体的形貌进行观察,并利用振动样品磁强计对复合粉体的磁学性能进行研究.结果表明:复合粉体均呈针状,长度和细度均为纳米级.当Fe3 O4,Y2 O3:1;Eu3+,5;Tb3+和三聚氰胺比例为1:3:4时,所制备的FeYO3/Y2 O3:1;Eu3+,5;Tb3+粉体磁力最强,磁力饱和强度为11.3 emu·g-1.     

CsI-LiCl共晶材料的坩埚下降法生长与闪烁性能研究

本文采用坩埚下降法,在真空密封的石英坩埚中成功生长出CsI-LiCl与CsI-LiCl:Na共晶闪烁体。通过扫描电子显微镜(SEM)观察晶体微结构表明该共晶中LiCl相与CsI相存在周期性的层状排列,CsI相的厚度在5 μm左右。共晶样品的X射线激发发射谱显示在CsI-LiCl和CsI-LiCl:Na共晶样品存在缺陷发光,在CsI-LiCl样品中还观察到了纯CsI的自陷激子(STE)发光。CsI-LiCl样品在α粒子激发下的多道能谱中观察到明显的全能峰,这一结果证明CsI-LiCl共晶可用于热中子探测的潜力。     

静电纺丝法制备CeO2微纳米纤维及其除氟性能

以聚丙烯腈(PAN)为载体,六水合硝酸铈[Ce(NO₃)₃·6H₂O]为原料,采用静电纺丝法制备了Ce(NO₃)₃/PAN纤维,在空气中热处理得到CeO₂微纳米纤维,通过XRD、BET和SEM对CeO₂微纳米纤维进行表征。采用静态吸附实验探讨了CeO₂微纳米纤维去除水溶液中氟离子的性能,考察了溶液pH值、初始氟离子浓度及共存阴离子等对吸附性能的影响。结果表明,pH=3时,CeO₂微纳米纤维对F^-的吸附性能最佳,CeO₂吸附量随着F^-浓度的增大呈上升趋势。CeO₂微纳米纤维对F^-的吸附等温线遵循Langmuir模型,二级动力学模型能很好地描述CeO₂微纳米纤维对F^-的吸附过程。CeO₂微纳米纤维的除氟性能优良,可为其实际应用提供理论参考。     

First-principles coexistence simulations of supercooled liquid silicon

We perform first-principles coexistence simulations of the low-density and the high-density phases of supercooled liquid silicon and find a negative slope for the coexisting line in the temperature-pressure plane. Electron density maps and electron-localization function plots of the two phases of silicon show marked differences. The calculated differences suggest more localized electrons in the low-density liquid compared to the high-density liquid, coming from an increased population of covalent bonds, which further explain the calculated negative slope in the two phase coexistence regime. This is consistent with the presence of a pseudo-gap in low-density liquid silicon, absent in the high-density liquid which shows a metallic behavior.     

Crystal structures of thecis andtrans isomers of dithiahexahydro[3.3]metacyclophane

Structures of both thecis andtrans isomers of dithiahexahydro[3.3]metacyclophane, ?C₆H₄?CH₂SCH₂?C₆H₁₀?CH₂SCH₂?, have been determined, wherecis andtrans refer to the attachments to the cyclohexane ring. Thecis form crystallizes in the monoclinic space groupP2₁/c witha=8.4299(11)Å,b=21.772(2)Å,c=8.9724(13)Å, β=116.574(11)^o, andZ=4. Thetrans isomer packs into the monoclinic space groupP2₁ witha=8.159(16)Å,b=10.185(5)Å,c=9.558(2)Å, β=112.435(18)^o, andZ=2. The cyclohexane ring of thecis isomer is in the chair conformation, while the cyclohexane of thetrans isomer is found in a twisted boat conformation.     

CTAB与SDBS对碳酸锶粒子生长形态调控及机理研究

以表面活性剂CTAB和SDBS为化学添加剂,采用化学共沉淀法对碳酸锶晶体的生长形态进行调控,成功地制备出了实心的树枝状和花瓣为空心的花状碳酸锶粉体,并用X射线衍射(XRD)、扫描电子显微镜(SEM)和傅里叶变换红外光谱(FT-IR)等分析手段对样品进行了表征;最后重点对化学添加剂可能产生的影响机理进行了初步的探讨.结果表明,CTAB和SDBS在晶体生长的过程中能起到显著的影响作用,两者对粒子分散性能的作用效果相反,而且后者对晶体(013)和(213)晶面表面能降低的贡献明显大于前者.     

Triethyl ammonium salt of O,O′-bis(p-tolyl)dithiophosphate, [Et3NH]+[(4-MeC6H4O)2PS2]−

Triethyl ammonium Salt of O,O′-bis(p-tolyl)dithiophosphate and O,O′-bis(m-tolyl)dithiophosphate have been obtained by reaction of p- and m-cresol, respectively with P₂S₅ in toluene and have been characterized by elemental analysis, IR, ¹H and ³¹P NMR spectroscopy. The molecular structure of O,O′-bis(p-tolyl)dithiophosphate has been determined. Crystal data: [Et₃NH]⁺[(4-MeC₆H₄O)₂PS₂]⁻: Monoclinic, P2₁/c, a=15.2441(9) ?, b=10.415(2) ?, c=3.9726(9) ?, β=91.709(7)°, V=2217.5(1) ?⁻³, Z=4.Supplementary materials Additional material available from the Cambridge Crystallographic Data Centre (CCDC no. 600927 for [Et₃NH]⁺[(4-MeC₆H₄O)₂PS₂]⁻ comprises the final atomic coordinates for all atoms, thermal parameters, and a complete listing of bond distances and angles. Copies of this information may be obtained free of charge on application to The Director, 12 Union Road, Cambridge CB2 2EZ, UK (fax: +44-1223-336033; email: deposit@ccdc.cam.ac.uk or www:http://www.ccdc.cam.ac.uk).     

X-ray analysis of sideroxol from <Emphasis Type="Italic">Sideritis leptoclada</Emphasis>

Sideroxol (1), a kaurane diterpene which has the ent-7α,18-dihydroxy-15β,16β-epoxykaurane structure (MW = 320.47, C₂₀H₃₂O₃) was obtained from the acetone extract of Sideritis leptoclada plant as well as from some other Sideritis species. It crystallizes in the orthorhombic space group P2₁, 2₁, 2₁ with a = 10.967(3), b = 24.555(5), c = 6.372(4) Å, Dc = 1.240 g cm⁻³, Z = 4, and refines to R = 0.065 for 721 independent reflections. The skeleton consists of three fused six-membered rings and a five-membered ring with fused epoxide. The six membered rings exhibited slightly distorted chair conformation. In addition to sideroxol, two kaurane and five kaurene diterpenes were isolated from the hexane and acetone extracts of the studied plant.     

New zeotype borophosphates with chiral tetrahedral topology: (H)0.5M1.25(H2O)1.5[BP2O8]·H2O (M = Co(II) and Mn(II))

Two new isostructural open‐framework zeotype transition metal borophosphate compounds, (H)_0.5M_1.25(H₂O)_1.5[BP₂O₈]·H₂O (M = Co(II) and Mn(II)) were synthesized by mild hydrothermal method. The structure of compounds were characterized by single‐crystal X‐ray diffraction which have ordered, alternating, vertex‐sharing BO₄, PO₄, and (MO₄)OM(H₂O)₂ groups with hexagonal, P 6₁ 2 2 (No 178) space group and unit cell parameters for Co a = 9.4960(6) Å, c = 15.6230(13) Å, for Mn a = 9.6547(12) Å, c = 15.791(3) Å, Z = 1 for both of them. TGA/DTA analysis, IR spectroscopy were used for characterization. Magnetic susceptibility measurements for both of the compound indicate strong antiferromagnetic interaction between metal centers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique

We have studied the optical, structural and surface morphology of doped and undoped GaN thin films. The p- and n-type thin films have been successfully prepared by low-pressure MOCVD technique by doping with Mg and Si, respectively. The different carrier concentrations were obtained in the GaN thin films by varying dopant concentrations. Photoluminescence (PL) studies were carried to find the defect levels in the doped and undoped GaN thin films at low temperature. In the undoped GaN thin films, a low intensity and broad yellow band peak was observed. The donor–acceptor pair (DAP) emission and its phonon replicas were observed in both the Si or Mg lightly doped GaN thin films. The dominance of the blue and the yellow emissions increased in the PL spectra, as the carrier concentration was increased. The XRD and SEM analyses were employed to study the structural and surface morphology of the films, respectively. Both the doped and the undoped films exhibited hexagonal structure and polycrystalline nature. Mg-doped GaN thin films showed columnar structure whereas Si-doped films exhibited spherical shape grains.