Optical and electrical studies on spray deposited ZnO thin films

ZnO thin films were prepared by spray pyrolytic decomposition of zinc acetate onto a glass substrate. These films were analyzed for the optical and electrical properties. Optical studies show that in these films the electronic transition is of the direct transition type. The optical energy gap for the films of different thicknesses is estimated to be in the range 2.98 – 3.09 eV. Electrical studies indicate that the films exhibit thermally activated electronic conduction and the activation energies are found to be dependent on the film thickness. The complex impedance measurements were carried out over a wide range of frequencies at room temperature (300 K). All the impedance spectra contain only a single arc, but the arc has a non‐zero intersection with the real axis in the high frequency region. Also, the arc has its centre lying below with the real axis which indicates the multirelaxation behavior of the films. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Surface structure of obliquely deposited layers and liquid crystal alignment

The dependence of the orientational action of obliquely deposited SiO_x layers on the deposition angle and the residual gas pressure has been investigated. The variation of the pressure gave rise to a modification of the general dependence of the pretilt angle of liquid crystals on the deposition angle. A model has been developed which explains the action of all deposition parameters on the orientational behaviour of liquid crystals. In a first step, some tendencies of the layer formation are stated. Thereby, in a second step, it is possible to explain the change in the orientation at variations of deposition parameters using the knowledge of these tendencies and experimentally stated informations on the relative change of layer parameters.     

Structure related properties of obliquely deposited amorphous a-As2S3 thin films

The surface roughness and morphology growth of a-As₂S₃ films vacuum deposited within a large scale of vapor incidence angles are studied. The formation of a columnar structure at normal and oblique deposition is demonstrated. The relationship between the micromorphology of the films and their optical and mechanical properties is revealed for as grown and annealed samples.     

Characterizations of pulsed laser deposited SiC thin films

Thin films of silicon carbide (SiC) were prepared using pulsed laser deposition (PLD) on Si(1 0 0) substrates at a temperature of 370 °C. Various structural characterizations showed the development of short-range SiC precipitates in the films. These films were annealed isochronally at temperatures of 800 °C, 1000 °C and 1200 °C for 2 h under an inert environment. Thermally induced crystalline ordering of SiC into β-SiC phase was investigated by X-ray diffraction (XRD), Raman spectroscopy and Fourier transforms infrared (FTIR) spectroscopic measurements. In addition to the crystallization of SiC films, high temperature annealing resulted in the dissolution of carbon clusters found in the as-grown films.     

Optical properties of Al‐doped ZnO thin films deposited by two different sputtering methods

Aluminum‐doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O₂/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Also effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were explained using the X‐ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical studies of aromatic polyazomethine thin films

Optical transmission and fundamental reflectivity spectra of aromatic polyazomethine thin films, obtained by vacuum evaporation via the polycondensation process have been investigated in the wide spectral range 0.49–6.2 eV. As initial monomers, terephaldehyde (TPA) and one of four different amines, i.e. paraphenylene-diamine (PPDA), 7,2-diamino-fluorene, 1,1′-biphenyl-3,3′,4,4′-tetramine and 3-amino-4-(1-naphthyldiazenyl)phenylamine (fat brown RR) have been used, respectively. Amorphous character of these films was confirmed by the results of X-ray diffraction and AFM investigations. Absorption coefficient of the films has been obtained and the edge of absorption seems to be similar to the absorption edge typical for amorphous semiconductors, what allowed to obtain the Urbach energy and E_T parameter. The energy gaps of the films, following the Tauc relation, are found to change from 2.05 to 2.4 eV, depending on the length of conjugated part of the polymer chain. Absorption bands above the absorption edge, observed for different polyazomethine films are connected with their chemical structure and possible electronic transitions.     

Angular correlation studies of thin metal films

Angular correlation of positron annihilation radiation is widely used in solid state physics studies (Goldanskii; Hautojärvi), in the defectoscopy of monocrystals in particular (Nielsen et al.). The interest to surface studies gave rise recently to very sophysticated and expensive method of positron beams (Goldanskii et al.). The recent study and recently published papers (Aravin et al.; Valiev et al.) demonstrate, however, that valuable information on surface properties can be obtained using the traditional angular correlation (AC) technique.     

Optical and kinetic properties of cathodically deposited amorphous tungsten oxide films

Optical properties and the coloration–decoloration kinetics of electrochromic films of amorphous tungsten oxide (a-WO₃), produced by cathodic deposition from a sodium tungstate based aqueous peroxide electrolyte, have been investigated. As films color in 1 N H₂SO₄, sequential appearance of bands with maxima at ∼1 eV, 1.6 eV, 2 eV, and 2.4 eV is observed in their optical absorption and electrosorption spectra, is the same as in the case of reduction of nanosized hydrated-WO₃ colloids with a gradual decrease in their size to that of 12-tungsten polyanions with Keggin structure, indicating the presence of such polytungstates in cathodically deposited a-WO₃, too. When polytungstate is reduced by one electron, an absorption band with a maximum at ∼1.6 eV appears in the optical spectrum of the film. This band corresponds to the optical excitation of charge transfer of the W⁵⁺ → W⁶⁺ type between two adjacent tungsten atoms. The reduction of polytungstate by a second electron with potential shift towards more negative values is accompanied by the appearance of an analogous band with a maximum at ∼2 eV. The reduction of such polytungstates involves participation of the bulk of injected electrons, indicating their dominate role in the nanostructure of the films investigated. The effective co-diffusion coefficient of electrons and protons in cathodically deposited a-WO₃ exhibits a potential dependence with a maximum at 0.1 V against a silver-chloride electrode, where its value is ∼10⁻⁸ cm²/s. It has been shown that the decrease in this coefficient at potential values of over 0.1 V is caused by a decrease in electron mobility.     

Optical properties of flash-evaporated CuInTe2 thin films

Optical absorption spectra of flash-evaporated polycrystalline thin films of CuInTe₂ are measured in the photon energy range from 0.5 to 3.0 eV. A gap energy in the range from 0.96 to 0.99 eV and a spin-orbit splitting of the valence band of 0.61 ± 0.03 eV are derived from the spectra. It is found that the spectra are considerably influenced by grain boundary effects.     

Optical characterization of thermally evaporated thin CdO films

Cadmium Oxide films have been prepared by vacuum evaporation method on a glass substrate at room temperature. Detailed structural, optical, and electrical properties of the films are presented at different annealing temperatures. The crystal structure of the samples was studied by X‐ ray diffraction. The spectral absorption coefficient of the CdO film at the fundamental absorption region (450‐650nm) was determined using the spectral data of transmittance. The direct and indirect band gap energies were determined and found to be 2.33 eV and 1.95 eV respectively. The third order optical nonlinearities χ(3) of CdO films has been measured used the z‐can technique. The real and imaginary parts of χ(3) have been measured at 514 nm and found to be 1.7x10^‐3 esu and 3.0x10^‐3 esu, respectively. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical properties of thermally evaporated CdS thin films

CdS thin films of varying thicknesses were deposited on cleaned glass substrates at room temperature by thermal evaporation technique in a vacuum of about 2 x 10^‐5 torr. UV‐VIS spectra of the films were studied using the optical transmittance measurements which were taken in the spectral region from 300 nm to 1100 nm. The absorbance and reflectance spectra of the films in the UV‐VIS region were also studied. Optical constants such as optical band gap, extinction coefficient, refractive index, optical conductivity and complex dielectric constant were evaluated from these spectra. All the films were found to exhibit high transmittance (∼ 60 ‐ 93 %), low absorbance and low reflectance in the visible/near infrared region from ∼ 500 nm to 1100 nm. The optical band gap energy was found to be in the range 2.28 – 2.53 eV. All the films annealed at 300°C for 4 hours in vacuum (∼ 10^‐2 torr) showed a decrease in the optical transmittance with its absorption edge shifted towards the longer wavelength, leading to the result that the optical band gap decreases on annealing the films. Also, on annealing crystallinity of the films improves, resulting in decrease in the optical transmittance. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and characterization of manganese sulphide thin films deposited by spray pyrolysis

Manganese sulphide (MnS) thin films have been deposited onto glass substrate by a low cost spray‐pyrolysis technique at 220 °C. The as‐deposited MnS thin films have been characterized using scanning electron microscopy (SEM), energy dispersive X‐ray (EDX) spectroscopy, atomic force microscopy (AFM), X‐ray diffraction, UV visible spectroscopy and photo electrochemical (PEC) measurement. The SEM and AFM images showed that the MnS thin films were well covered onto the substrate surface. The as‐deposited raw thin film was found to be amorphous in nature and perfectly crystalline phase after annealing the sample. Optical band gap of the MnS thin films was found to vary from 3.1 to 3.21 eV and the band gap decreases with the increase in film thickness. Optical constants such as refractive index, extinction coefficient have been evaluated using reflectance and absorbance data. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Nanoindentation investigation of amorphous hydrogenated carbon thin films deposited by ECR-MPCVD

Nanomechanical properties of amorphous hydrogenated carbon thin films are performed by nanoindentation technique. The amorphous hydrogenated carbon films are produced on silicon substrate by electron cyclotron resonance microwave plasma chemical vapor deposition (ECR-MPCVD). The effect of negative bias voltage on amorphous hydrogenated carbon films is examined by Raman spectroscopy and the results showed that the intensity ratio of D-peak to G-peak (I_D/I_G) of amorphous hydrogenated carbon films at various bias voltages, increased as the bias voltage increased. The results also showed that Young’s modulus and hardness also increased as the bias voltage increased. In addition, Young’s modulus and hardness both decreased as the indentation depth increased.     

Optical and morphological properties of porous diamond-like-carbon films deposited by magnetron sputtering

Porous diamond-like-carbon (PDLC) thin films obtained on silicon substrate by DC low energy magnetron sputtering have been investigated by photoluminescence, transmission and reflection spectroscopy, photoacoustic and spectroscopic ellipsometry. The absorption features observed for these films show similarities with those of porous silicon (PS) as well as in the performed gradient structural pattern classification of the SFM porosity, by means of the computational GPA-flyby environment on PS and PDLC samples. The dielectric function is also calculated for the bulk diamond-like carbon using the full-potential linearized augmented plane wave method within the framework of local density approximation to density functional theory. From the measurement a low real dielectric constant of about 4.5 at 0.8 eV was found whereas the calculated e₁(0) for the bulk diamond has a value of 5.5.     

Structural,magnetic and transport properties of ion beam deposited Co thin films

Magnetic nanostructures display new and interesting physical phenomena and are currently used in a large variety of applications. We studied the structural, magnetic and transport properties of Co thin films deposited by ion beam sputtering. We probed the influence of the buffer layer material (Al, Cu, Ru or Ta) and thickness (10–100 Å) on the structural properties of Co thin films. Using X-ray diffraction we observed that textured fcc Co films can be grown on amorphous Ta as thin as 20 Å but for the other buffer layers no texture is observed. We also studied by magneto-optical Kerr effect (MOKE) the magnetic properties of the Co thin films as a function of Co thickness (100–1000 Å). Finally, the electrical resistivity and anisotropic magnetoresistance (AMR) of our Co thin films (on a Ta buffer) was obtained as a function of Co thickness.     

Structure and properties of hydrogenated amorphous silicon carbide thin films deposited by PECVD

a-Si_1?xC_x:H films are deposited by RF plasma enhanced chemical vapor deposition (PECVD) at different RF powers with hydrogen-diluted silane and methane mixture as reactive gases. The structure and properties of the thin films are measured by infrared spectroscope (IR), Raman scattering spectroscope and ultra violet–visible transmission spectroscope (UV–vis), respectively. Results show that the optical band gap of the a-Si_1?xC_x:H thin films increases with increasing Si–C bond fraction. It can be easily controlled through controlling Si–C bond formed by modulating deposition power. At low deposition power, the bond configuration of the a-Si_1?xC_x:H thin film is more disordered owing to the distinct different bond lengths and bond strengths between Si and C atoms. At a too high deposition power, it becomes still high disordered due to dangling bonds appearing in the a-Si_1?xC_x:H thin film. The low disordered bond configuration appears in the thin film deposited with moderate deposition power density of about 2.5 W/cm².     

Nucleation and grain growth in as deposited and ion implanted GeTe thin films

The crystallization dynamic of amorphous GeTe 50 nm thick films deposited on a SiO₂/Si substrate by RF magnetron sputtering, either ion implanted by Ge⁺ ions or not, has been analyzed in situ by optical microscopy during annealing in the 143-155 °C temperature range. Raman spectroscopy has been also performed in as deposited, ion implanted (i.i.) and melt quenched (m.q.) amorphous samples to compare the local order among the different amorphous structure. Nucleation and growth rates, for i.i. and as deposited samples, have been observed and directly compared by optical microscopy in a region of about 5 × 10⁴ μm². From these data, the activation energy and pre-exponential terms of each process have been calculated. The nucleation rate and growth velocity of the i.i. films increased by a factor thirteen and a factor three with respect to the as deposited samples. This evidence, in agreement with Raman spectroscopy data, suggests that implantation, providing kinetic energy by collision cascade, induces a local atomic rearrangement towards more relaxed amorphous states. As a result the crystallization kinetic is enhanced by the reduction of wrong bonds formed during sputter deposition, a process which occurs far from equilibrium conditions.     

Investigation of optical parameters of Ag-In-Se thin films deposited by e-beam technique

The optical properties of the Ag-In-Se (AIS) thin films deposited by e-beam technique were investigated by means of the optical transmittance measurements. The optical absorption coefficients of the films were found to vary from 10³ to 10⁵ cm⁻¹ over the wavelength range of 300-1100 nm. The real and imaginary parts of the refractive index and dielectric constant for the as-grown and annealed films in between 100 and 400 °C were evaluated by means of both envelope method (EM) and continuous wavelet transform (CWT) method and the results were in quite good agreement with each other. The refractive index, n, dispersion over the measured wavelength range was explained by applying single-oscillator model (SOM) and the related parameters were calculated. The optical absorption process for the AIS thin films was characterized by three direct transitions from three closely spaced valence bands to a single conduction band due to the splitting of the valence band under the influence of the tetragonal crystalline field and spin-orbit interaction. The direct optical band gap energy decreases as the annealing temperature increases because of the increase in the width of band tail states near valence-band edge caused by the Se segregation. The two distinct parameters of the quasicubic model; crystal-field splitting, Δ_CF, and spin-orbit splitting, Δ_SO, were calculated for as-grown and annealed AIS thin films.     

Investigation of anisotropy in as-evaporated amorphous chalcogenide thin films by optical waveguiding

Intrinsic birefringence in as-evaporated As_xS_1−x amorphous films have been measured by means of waveguiding technique. The anisotropy is between the directions in the film plane and the perpendicular ones. Dark relaxation, annealing behavior as well as compositional dependence of the optical anisotropy in fresh amorphous films are used for analysis of the effect in terms of the microscopic model proposed. A simple phenomenological model, based on distinct structural sites in chalcogenides, is shown to qualitatively explain some aspects of this phenomenon.