Theoretical Study on the Structure and Stability of Si5X （X = Li, Be, B, C, N, O, F, Na, Mg, Al, Si, P, S, Cl） Clusters

1 INTRODUCTION In the later 60s of last century, silicon substituted for germanium to present as mainstream in semicon- ductor. The semi-conductive devices made by silicon have many advantages, for example, refractory pro- perty, high radioresistance, simple and stable process- ing technic, high machinability and low cost. So it was widely used to manufacture large power appara- tuses, for instance, digit and linear integrated circuit, large scale integrated circuit (LSI), etc. Thus, th…     

Theoretical Studies on the Abstraction Reaction of Atomic O（^3p） with Si2H6

The hydrogen abstraction reaction of O(^3P) with Si2H6 has been studied theoretially. Two transition states of ^3A″ and ^3A′ symmetries have been located for this abstraction reaction. Geometries have been optimized at the UMP2 leve with 6-311G (d) basis set. G3MP2 has been used for the final single-point energy calculation. The rate constants have been calculated over a wide temperature range of 200-3000K using canonical variational transition-state sheory (CVT) with small curvature tunneling effect(SCT). The calculated CVT/SCT rate constants match well with the experimental value.     

First-Principle Studies on Adsorption of Cu^＋ and Hydrated Cu^＋ Cations on Clean Si（111） Surface

To study the adsorption behavior of Cu+ in aqueous solution on semiconductor surface, the interactions of Cu+ and hydrated Cu+ cations with the clean Si(111) surface were investigated via hybrid density functional theory(B3LYP) and Mller-Plesset second-order perturbation(MP2) method. The clean Si(111) surface was described with cluster models(Si14H17, Si16H20 and Si22H21) and a four-silicon layer slab under periodic boundary conditions. Calculation results indicate that the bonding nature of adsorption of Cu+ on Si surface can be viewed as partial cova- lent as well as ionic bonding. The binding energies between hydrated Cu+ cations and Si(111) surface are large, suggesting a strong interaction between them. The coordination number of Cu+(H2O)n on Si(111) surface was found to be 4. As the number of water molecules is larger than 5, water molecules form a hydrogen bond network. In aqueous solution, Cu+ cations will safely attach to the clean Si(111) surface.     

Theoretical Study on the Structural and Electronic Properties of the Reduced SnO2 （110） Surface

The reduced SnO2(110) surface has been investigated by using first-principles method with a slab model. By examining the vacancy formation energy of three kinds of reduced SnO2(110) surfaces, the most energetically favorable defect surface is confirmed to be the surface with the coexistence of bridging and in-plane oxygen vacancies, which is different with the traditional model by only removing bridging oxygen. The results of band structure calculations indicate that the electronic structure of this defect surface is similar to the SnO surface.     

镓在裸Si系和SiO2/Si系掺杂效应

Based on the diffusion action of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO_2/Si system is first presented in this paper ,the gallium doping effect in the two systems is analyzed theoretically. Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .     

Theoretical Study on the Structure and Isomerization of CH_3SB

1 INTRODUCTION Solid boron and materials containing boron are po-tential excellent rocket fuel. Many studies arefocused in experiment and theory on the boroncompounds, among which simple boroncompound-HOB with simple structure can be readilyprepared. There are many reports on the experimentaland theoretical re- search results of the molecule aswell as unsaturated CH3NH=B and H2N=B exceptHOB. Very recently, some theoretical studies ofunsaturated CH3OB…     

Studies on Photocatalytic Hydrogen Production Relating to the Surface Functional Groups＇ Modulation of Polymer-modified Pt/ZnS-CdS/SiO2

用丙烯酸酯和环氧树脂将亲水性的-OH和芳香性的苯环修饰到Pt/ZnS-CdS/SiO2催化剂表面,在不同气氛下进行热处理,得到了表面修饰并热处理后的Pt/ZnS-CdS/SiO2光催化剂,考察催化剂的可见光催化分解水产氢活性.结果表明修饰并热处理后催化剂活性不同程度的下降.XRD结果表明,修饰前后ZnS和CdS的特征衍射峰没有改变,但空气热处理致使催化剂晶型由立方晶型的CdS和六方晶型的ZnS向六方晶型的CdS和α-ZnS的转变,氢气气氛热处理致使催化剂的晶型向六方结构的固溶体Zn0.5Cd0.5S转变,未修饰的催化剂在空气和氢气中热处理后晶型发生了同样的转变.HRTEM结果表明表面修饰后催化剂平均粒径由18 nm减小为6 nm,仍以ZnS为外层,CdS为内层的核壳结构形态存在.紫外可见漫反射（UV-Vis DRS）结果表明,经修饰和热处理后的光催化剂在450～800 nm区间的光吸收增加,在空气中773 K煅烧后的催化剂的吸收限由480 nm红移至520 nm,而在氢气中于773 K煅烧后吸收限则由480 nm蓝移至420 nm.修饰后催化剂的羟基吸收强度增大,出现了苯环的特征吸收峰,这些官能团经热处理后发生了显著变化.红外光谱（IR）结果表明空气热处理导致部分含氧官能团发生了脱离,羟基吸收增强;氢气热处理导致C—O和C—O—C的吸收峰增强,同时催化剂表面发生碳化.热重差热分析（TG-DTA）与红外结果均证实了这种变化.产氢活性下降可能归结为表面羟基减少导致的在反应体系中的分散性和光生电荷的分离效率降低;催化剂表面的含氧官能团占据了催化活性位并且降低了颗粒在水溶液中的分散性.     

Hard X-ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces

We present a study of buried GaP/Si(001) heterointerfaces by hard X-ray photoelectron spectroscopy. Well-defined thin (4–50 nm) GaP films were grown on Si(001) substrates with 2° miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested.     

C(膜)/Si(SiO2 )(纳米微粒)/C(膜)热处理的形态及结构分析

用直流辉光溅射+真空镀膜法制备了一种新型结构的硅基纳米发光材料- C(膜)/Si(SiO2)(纳米微粒)/C(膜)夹层膜,并对其进行了退火处理.用TEM、 SEM、 XRD和XPS对其进行了形态结构分析.TEM观察表明: Si(SiO2)纳米微粒基本呈球形,粒径在30 nm左右.SEM观察表明: 夹层膜样品总厚度约为50 μm,膜表面比较平整、致密.400℃退火后,样品表面变得凹凸不平,出现孔状结构; 650℃退火后,样品表面最平整、致密且颗粒均匀.XRD分析表明:制备出的夹层膜主要由SiO2和Si组成,在C原子的还原作用和氧气的氧化作用的共同作用下, SiO2和Si的含量随加热温度的升高而呈现交替变化: 400℃时, C的还原作用占主导地位, SiO2几乎全部被还原成了Si,此时Si含量最高; 400～650℃时,氧化作用占主导地位, Si又被氧化成SiO2, Si含量降低, SiO2含量逐渐上升,在650℃达到最高.XPS分析表明: 在加热过程中, C原子逐渐扩散进入Si(SiO2)微粒层,在650℃与Si反应生成了新的SiC.     

A new Si tetramer structure on Si (001)

Interactions between Si ad-dimers on Si (001) have been studied by molecular dynamics simulations using the Stillinger–Weber potential. The interactions determine the formation of clusters from diffusing dimers. We show different pathways for the formation of multiple-dimer clusters and propose a new tetramer (T_CC) structure formation by two diffusing dimers interacting. This tetramer structure has been found to be energetically stable with respect to isolated ad-dimers. Moreover, their local bonding configuration is very similar to the B-type step edge which is known to be the favoured adsorption site for epitaxial growth. The proposed tetramer may play a crucial role as the nucleus of the new epitaxial layer on Si (001).     

Theoretical study of the Si2NO potential energy surface

The structures, spectroscopies, and stabilities of the doublet Si₂NO radical are explored at the density functional theory (DFT) and ab initio levels. Seventeen isomers are located, connected by 26 interconversion transition states. At the CCSD(T)/6‐311+G(2df)//QCISD/6‐311G(d)+ZPVE level, three low‐lying isomers are predicted, that is, one bent species SiNSiO 3 (5.1 kcal/mol) containing the important Si?N triple bonding and two four‐membered ring isomers including cyclic cSiNSiO 1 (0.0) with Si? Si cross‐bonding with C_2v symmetry and puckered cSiNSiO 1′ (11.9) with divalent carbene character. Three low‐lying isomers 1, 1′, and 3 have reasonable kinetic stabilities and might be observable either experimentally or astrophysically. The possible formation strategies of 1, 1′, and 3 in laboratory and in space are discussed in detail. The calculated vibrational frequencies and possible formation processes of 3 are consistent with recent experimental observations. In light of the fact that no cyclic nitrogen‐containing species have been detected in space, two cyclic isomers 1 and 1′ could be promising candidates. Furthermore, the bonding nature of three isomers 1, 1′, and 3 is analyzed. The calculated results are also compared with those of the analogue C₂NO radical. © 2006 Wiley Periodicals, Inc. Int J Quantum Chem, 2007     

应用渐进因子分析法研究SiO_2/Si样品俄歇深度剖析

首次利用渐进因子分析法对ＳｉＯ２／Ｓｉ样品俄歇深度剖析过程进行研究，发现ＳｉＯ２／Ｓｉ界面处有ＳｉＯｘ成分存在，ｘ值在１０～１５之间，厚度约为３０ｎｍ，含量接近５０％。Ａｒ＋离子束的轰击使得ＳｉＯ２薄膜内分解产生亚稳态ＳｉＯ２，含量在１７％左右。研究结果表明，渐进因子分析法非常适合于俄歇深度剖析的化学态分析。     

Mg-SiO_2体系制备Mg_2Si/AZ91D复合材料的研究

采用原位合成技术制备了Mg2Si/AZ91D复合材料,并通过光学显微镜(OM)、扫描电镜(SEM)、能谱仪(EDS)和X射线衍射仪(XRD)等对添加碱土、稀土元素的影响进行了研究。结果表明:AZ91D镁合金中加入SiO2(其中Si占合金质量的3%)后,出现多边形状或树枝晶状的初生Mg2Si相,以及汉字状的共晶Mg2Si相,树枝晶状Mg2Si的平均尺寸约25~50μm,汉字状Mg2Si的平均尺寸约12~15μm;Mg2Si对镁合金中的β-Mg17Al12相有细化作用。添加Ca,Sr,Y对Mg2Si形貌、尺寸有明显的改善,当添加0.9%Ca,0.1%Sr,0.5%RE(80%Y)变质处理后,Mg2Si形貌全部变为多边形状,平均尺寸约0.8~5μm。     

Comparative Investigation of Mo(CO)6 Adsorption on Clean and Oxidized Si(111) Surfaces

Mo(CO)₆ adsorption on the clean, oxygen-precovered and deeply oxidized Si(111) surfaces was comparatively investigated by high-resolution electron energy loss spectroscopy. The downward vibrational frequency shift of the C-O stretching mode in adsorbed Mo(CO)₆ illustrates that different interactions of adsorbed Mo(CO)₆ occur on clean Si(111) and SiO₂/Si(111) surfaces, weak on the former and strong on the latter. The strong interac-tion on SiO₂/Si(111) might lead to the partial dissociation of Mo(CO)₆, consequently the formation of molybdenum subcarbonyls. Therefore, employing Mo(CO)₆ as the precursor, metallic molybdenum could be successfully deposited on the SiO₂/Si(111) surface but not on the clean Si(111) surface. A portion of the deposited metallic molybdenum is transformed into the MoO₃ on the SiO₂/Si(111) surface upon heating, and the evolved MoO₃ finally desorbs from the substrate upon annealing at elevated temperatures.     

BBDMS-PPV/ITO界面结构ADXPS研究

聚合物电致发光器件（Polymer Electroluminescent Device,PLED)已显示出广阔的应用前景^[1-6]。已往人们比较重视阴极材料的选择及相关金属与有机界面的研究^[7],而有关发光层或空穴传输层与阳极ITO膜之间的界面结构及化学问题则少见报道。事实上,ITO膜与有机层之间的作用对器件的可靠性及寿命具有更为严重的影响^[8,9]。由于异质界面的过渡层结构复杂,以纳米尺度上化学组成是非计量比的,因此对这种极薄的埋藏界面的研究方法还需进一步探索。本文通过模型试样制备和变角X射线光电子谱（ADXPS）技术,对PLED中共轭导电聚合物聚2,5－二（二甲基正丁基硅基）对苯乙烯撑（BBDMS－PPV）与阳极ITO膜所形成的界面结构进行了初步研究。     

NiPd/Si界面常温扩散及硅化物形成的XPS证据

Nickel-palladium film on p-Si prepared by potential -controlled electrodeposition has much better adherence than that deposited by other methods .To reveal the reasons of this effect, X-ray photoelectron spectroscopy (XPS) combined with Ar+ sputtering was used to investigate the interface of NiPd /Si. The results showed that dramatic interdiffusion of Ni, Pd and Si had occurred at atmospheric temperature. On the XPS spectra of nickel and palladium , there are two kinds of binding energy , contributed by pure metals and metal silicide respectively. NiSi, PdSi and Pd2Si were formed at the interface. Both of the electric field on the surface and the H atoms in the metal lattice have the possibility to promote reactions between nickel or palladium and silicon .