Ferromagnetism in epitaxial germanium and silicon layers supersaturated with managanese and iron impurities

The possibility of laser synthesis of diluted magnetic semiconductors based on germanium and silicon doped with manganese or iron up to 10–15 at % has been shown. According to data on the electronic levels of 3d atoms in semiconductors, Mn and Fe impurities are most preferable for realizing ferromagnetism in Ge and Si through the Ruderman-Kittel-Kasuya-Yosida mechanism. Epitaxial Ge and Si layers 50–110 nm in thickness were grown on gallium arsenide or sapphire single crystal substrates heated to 200–480°C. The content of a 3d impurity has been measured by x-ray spectroscopy. The ferromagnetism of layers and high magnetic and acceptor activities of Mn in Ge, as well as of Mn and Fe in Si, are manifested in the observation of the Kerr effect, anomalous Hall effect, high hole conductivity, and anisotropic ferromagnetic resonance at 77–500 K. According to the ferromagnetic resonance data, the Curie point of Ge:Mn and Si:Mn on a GaAs substrate and of Si:Fe on an Al₂O₃ substrate is no lower than 420, 500, and 77 K, respectively.     

Laser-plasma deposited nanosized layers of ferromagnetic semiconductors and silicon- and germanium-based Heusler alloys

The electric, magnetic resonance, and magneto-optical properties of thin laser-plasma deposited 50–100-nm layers of diluted magnetic semiconductors Ge:(Mn, Al)/GaAs, Ge:(Mn, Al)/Si, and Heusler alloys Co₂MnSi/Si, Co₂MnSi/GaAs, and Fe₂CrSi/GaAs with T _c > 293 K were studied. Anomalous ferromagnetic resonance in Ge:(Mn, Al) layers, ferromagnetism in CoSi/Si characterized by strong hysteresis in the magneto-optic Kerr effect, and the anomalous Hall effect at 293 K were observed.     

Magnetism in structures with ferromagnetic and superconducting layers

The influence of superconductivity on ferromagnetism in the layered Ta/V/Fe_1–x V _x /V/Fe_1–x V _x /Nb/Si structures consisting of ferromagnetic and superconducting layers is studied using polarized neutron reflection and scattering. It is experimentally shown that magnetic structures with linear sizes from 5 nm to 30 μm are formed in these layered structures at low temperatures. The magnetization of the magnetic structures is suppressed by superconductivity at temperatures below the superconducting transition temperatures in the V and Nb layers. The magnetic states of the structures are shown to undergo relaxation over a wide magnetic-field range, which is caused by changes in the states of clusters, domains, and Abrikosov vortices.     

New diluted ferromagnets based on diamond-like semiconductors GaSb,InSb, InAs,Ge, and Si,supersaturated with manganese or iron impurities during laser epitaxy

The electric, magnetic, and magneto-optical properties of thin (50–100 nm) GaSb:Mn, InSb:Mn, InAs:Mn, Ge:Mn, Ge:Fe, Si:Mn, and Si:Fe layers with a Curie point up to 500 K, obtained by laser plasma deposition in vacuum in the case of strong supersaturation of a solid solution with a 3d impurity, have been experimentally investigated.     

Magnetoresistive properties of nanostructured magnetic metals,manganites, and magnetic semiconductors

We consider methods for controlling magnetoresistive parameters of magnetic metal superlattices, manganites, and magnetic semiconductors. By reducing the thickness of ferromagnetic layers in superlattices (e.g., Fe layers in Fe/Cr superlattices), it is possible to form superparamagnetic clustered–layered nanostructures with a magnetoresistance weakly depending on the direction of the external magnetic field, which is very important for applications of such type of materials. Producing Mn vacancies and additionally annealing lanthanum manganites in the oxygen atmosphere, it is possible to increase their magnetoresistance by more than four orders of magnitude. By changing the thickness of p–n junction in the structure of ferromagnetic semiconductors, their magnetoresistance can be increased by 2–3 orders of magnitude.     

Intersubband cyclotron resonance of holes in strained Ge/GeSi(111) heterostructures with germanium wide quantum wells and cyclotron resonance of 1<Emphasis Type="Italic">L</Emphasis> electrons in GeSi layers

The submillimeter (?ω=0.5–5 meV) magnetoabsorption spectra of strained Ge/Ge_1?xSi_x(111) multilayer heterostructures with thick Ge layers (d_Ge=300–850 Å, d_GeSi≈200 Å, x≈0.1) are investigated at T=4.2 K upon band-gap optical excitation. It is revealed that the absorption spectra contain cyclotron resonance lines of 1L electrons localized in GeSi solid solution layers (unlike the previously studied structures with thin Ge layers as quantum wells for 3L electrons). The absorption spectra of the samples with thick Ge layers (d_Ge=800–850 Å) exhibit cyclotron resonance lines of holes due to transitions from the lower Landau levels in the first quantum-well subband to the Landau levels belonging to the third and fifth higher subbands.     

Spin-wave resonance in Ge<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> films exhibiting percolation ferromagnetism

Magnetic properties of Ge_{1 ? x} Mn _x (x = 0.02, 0.04, 0.08) thin films obtained by ion-implanting Mn⁺ ions into single-crystal Ge plates are investigated. The contributions of the subsystem of dispersed Mn²⁺ ions, Ge³Mn⁵ ferromagnetic clusters, and Mn-enriched ferromagnetic domains of Ge to the magnetic moment of Ge_{1 ? x} Mn _x films are distinguished. In the subsystem of dispersed Mn²⁺ ions in Ge_{1 ? x} Mn _x films at temperatures below 10 K, a spin-wave resonance is observed in the magnetically ordered state due to percolation ferromagnetism. It is established that, in the films with percolation ferromagnetism, the exchange integrals determined from static measurements correspond to those determined by dynamic measurements.     

Electronic Structure and Magnetic Phase Transition in Helicoidal Fe<Subscript>1 - <Emphasis Type="Italic">x</Emphasis></Subscript>Co<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Si Ferromagnets

LSDA + U + SO calculations of the electronic structure of helicoidal Fe_{1 - x}Co _x Si ferromagnets within the virtual crystal approximation have been supplemented with the consideration of the Dzyaloshinski-Moriya interaction and ferromagnetic fluctuations of the spin density of collective d electrons with the Hubbard interactions at Fe and Co atoms randomly distributed over sites. The magnetic-state equation in the developed model describes helicoidal ferromagnetism and its disappearance accompanied by the occurrence of a maximum of uniform magnetic susceptibility at temperature T _C and chiral fluctuations of the local magnetization at T > T _C . The reasons why the magnetic contribution to the specific heat at the magnetic phase transition changes monotonically and the volume coefficient of thermal expansion (VCTE) at low temperatures is negative and has a wide minimum near T _C have been investigated. It is shown that the VCTE changes sign when passing to the paramagnetic state (at temperature T _S ).     

Tunable magnetic interaction by an applied electric field in a Co-adsorbed SiC monolayer

The magnetic properties of Co-adsorbed SiC monolayer under an external electric field are investigated using first-principles method. In the absence of the electric field, the interaction between two Co atoms is ferromagnetic, which is originated by the p?d hybridization between Co and its neighboring C and Si atoms. When an electric field was introduced along the c axis, the interaction between two Co dopants switched from ferromagnetic to antiferromagnetic, which could be dominated by the competition between p?d exchange and superexchange. Moreover, the magnetic anisotropy prefers to parallel to the a axis and it seems not to be turn into the c axis under the electric field.     

Ferromagnetic and spin-wave resonance in Co/Pd/CoNi multilayer films

It has been found that the magnitude and sign of exchange interaction between Co(5 nm) and CoNi(5 nm) ferromagnetic layers through Pd depend on magnetization orientation of ferromagnetic layers. If magnetization is oriented in a layer plane, exchange interaction can be both ferromagnetic and antiferromagnetic. If magnetization orientation is orthogonal to a layer plane, the exchange constant is always positive at d_Pd<d _c and equals zero at d_Pd>d _c (d _c is the characteristic length).     

Representation of type I heterostructure junctionless tunnel field effect transistor for high-performance logic application

In this paper, a gate-all-around junctionless tunnel field effect transistor (JLTFET) based on heterostructure of compound and group III–V semiconductors is introduced and simulated. In order to blend the high tunneling efficiency of narrow band gap material JLTFETs and the high electron mobility of III–V JLTFETs, a type I heterostructure junctionless TFET adopting Ge–Al _x Ga_1?x As–Ge system has been optimized by numerical simulation in terms of aluminum (Al) composition. To improve device performance, we considered a nanowire structure, and it was illustrated that high-performance logic technology can be achieved by the proposed device. The optimal Al composition founded to be around 20 % (x = 0.2). The numerical simulation results demonstrate that the proposed device has low leakage current I _OFF of ~1.9 × 10^?17, I _ON of 4 µA/µm, I _ON/I _OFF current ratio of 1.7 × 10¹¹ and subthreshold swing SS of 12.6 mV/decade at the 40 nm gate length and temperature of 300 K.     

Diluted magnetic semiconductors and spintronics

Classification of concentrated and diluted magnetic semiconductors is given and their physicochemical properties that are interesting for spintronics are characterized. The electronic structure of magnetic impurities in semiconductors and the nature of indirect exchange interactions between impurity spins in diluted magnetic semiconductors are considered. On the basis of the proposed theory of kinematic exchange, the Curie temperature T _C for bulk diluted magnetic semiconductors (In,Mn)Sb are estimated.     

Anomalous Hall effect and ferromagnetism in the new diluted magnetic semiconductor Sb<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>Cr<Subscript>x</Subscript>Te<Subscript>3</Subscript>

The magnetic and galvanomagnetic properties of single crystals of the new diluted magnetic semiconductor p-Sb_2?xCr_xTe₃ (0 ≤ x ≤ 0.02) have been studied in the temperature range 1.7–300 K. A ferromagnetic phase with the Curie temperature T_c ≈ 5.8 K and the maximum Cr content x = 0.0215 has been revealed. The easy magnetization axis is parallel to the C₃ crystallographic axis. In the presence of strong magnetic fields, the Shubnikov-de Haas effect has been observed. Analysis of this effect shows that doping with chrome reduces the concentration of holes. Negative magnetoresistance and the anomalous Hall effect are observed at liquid helium temperature.     

Determination of the Existence Region of a Griffith-Like Phase in Pr<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Sr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>MnO<Subscript>3</Subscript>/YSZ Films

We have studied the temperature dependences of the magnetic susceptibility and the electron magnetic resonance in Pr_1–xSr _x MnO₃/YSZ polycrystalline films (x = 0.2, 0.4). The paramagnetic properties of samples indicate the presence of short-range-order ferromagnetic correlations above the phase transition temperature (T _c ). The existence region of such correlations has been considered using the Griffith theory.     

Specific features of the electrical resistivity of half-metallic ferromagnets Co<Subscript>2</Subscript> <Emphasis Type="Italic">Me</Emphasis>Al (<Emphasis Type="Italic">Me</Emphasis> = Ti,V, Cr,Mn, Fe)

The transport properties of half-metallic ferromagnetic Heusler alloys Co₂MeAl (Me = Ti, V, Cr, Mn, Fe are transition 3d metals) have been measured in the temperature range of 4–900 K. The specific features of the behavior of the resistivity have been considered in the framework of the two-current model of conductivity that takes into account the existence of the energy gap in the electronic spectra of the alloys near the Fermi level of one of electron subbands that differs in the spin direction.     

On the born relation for crystals with diamond and sphalerite structure

The experimental data on the elastic constants C_ij for crystals with diamond and sphalerite structure at T=293 K were used to check the Born relation Δ4C₁₁(C₁₁?C₄₄)/(C₁₁+C₁₂)²=1. The relation was shown to be satisfied with a low accuracy for diamond due to a large scatter in the C_ij experimental values and with accuracies of 8.3, 7.6, 1.6, and 1.0% for Si, SiC, Ge, and α-Sn, respectively. For II–VI, III–V, and I–VII compounds with sphalerite structure, Λ was found to systematically deviate from unity toward lower values, and it was shown that the quantity (1-Λ) can be used to estimate the bond ionicity in these crystals. The effect of anharmonicity on the Λ values for Ge, Si, GaAs, InAs, and ZnSe was estimated; this effect was found to be insignificant.     

Ab initio exploration of d<Superscript>0</Superscript> digital magnetic heterostructures: the case of MgO and CaO <Emphasis Type="Italic">δ</Emphasis>-doped with potassium

Previous studies of digital magnetic heterostructures have mainly focused on 3d transition metal δ-doped semiconductors. In this work, sp-electron digital magnetic heterostructures without magnetic ions are proposed. Based on a theoretical density functional investigation, electronic structures and magnetic properties of MgO and CaO δ-doped with K were reported. The results show that these heterostructures are half-metallic ferromagnetic materials having semiconducting up spins and metallic down spins, with an exchange interaction much stronger than that of a random alloy with similar K concentration. Our first-principles calculations show that the carriers at the Fermi level are strongly confined within a few monolayers around the KO plane. This strong confinement is responsible for the large exchange coupling and the two-dimensional half-metallic behavior. The thickness of the host semiconducting spacer does not significantly change the global electric and magnetic features.     

Effect of bias voltage polarity of a substrate on the texture,microstructure, and magnetic properties of Ni films prepared by magnetron sputtering

The influence of the bias voltage polarity U_s on microstructure, crystallographic texture and magnetic properties has been investigated for Ni films with a thickness of ≈15–420 nm, which are obtained via magnetron sputtering at a working gas pressure P corresponding to the collision-deficient flight mode of atoms of the sputtered target between the target and the substrate. The Ni(111)-textured films have been shown to form at U_s ≈–100 V, whose microstructure and magnetic parameters are almost unchanged with a thickness. In contrast, the Ni(200) films are formed at U_s ≈ +100 V, whose magnetic properties and micro-structure depend significantly on the thickness d that manifests in a critical thickness d* ≈ 150 nm, when the structure of the film becomes inhomogeneous in the thickness, the remagnetization loops are changed from rectangular to supercritical with the formation of the band domain structure.     

High-temperature ferromagnetism in laser-deposited layers of silicon and germanium doped with manganese or iron impurities

The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T_c diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T_g=(20-550) °C on single-crystal GaAs or Al₂O₃ substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T_g, for Si:Mn/GaAs layers with T_c≈400 K is shown to be about 400 °C. The Si:Mn/Al₂O₃ layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, Si-based ferromagnetic layers have strongly different magnetic and electric properties in case of uniformly doped structures and digital alloys. Positive results of the Fermi level variation effect on the improvement of Si- and Ge-based DMS layers have been gained on the use of additional doping with shallow acceptor Al impurity which contributes to the increase of the hole concentration and the RKKY exchange interaction of 3d-ions. The Ge:(Mn, Al)/GaAs or Ge (Mn, Al)/Si layers grown at 20 °C feature surprising extraordinary angular dependence of FMR.     

Photoluminescence enhancement in double Ge/Si quantum dot structures

The luminescence properties of double Ge/Si quantum dot structures are studied at liquid helium temperature depending on the Si spacer thickness d in QD molecules. A seven-fold increase in the integrated photoluminescence intensity is obtained for the structures with optimal thickness d = 2 nm. This enhancement is explained by increasing the overlap integral of electron and hole wavefunctions. Two main factors promote this increasing. The first one is that the electrons are localized at the QD base edges and their wavefunctions are the linear combinations of the states of in-plane Δ valleys, which are perpendicular in k-space to the growth direction [001]. This results in the increasing probability of electron penetration into Ge barriers. The second factor is the arrangement of Ge nanoclusters in closely spaced QD groups. The strong tunnel coupling of QDs within these groups increases the probability of hole finding at the QD base edge, that also promotes the increase in the radiative recombination probability.