Electronic Properties of Fullerenes for Two Kinds of Hybridized Orbits

The electronic hopping energies and the band structure of a neutral C₆₀ molecule for two kinds of hybridized orbits, sp³ and sp², are studied using the Wannier function method and tight-binding approximation model, respectively. By comparison, the sp³ hybridized type is superior in the band structure obtained by employing the Wannier function method. When the effective nuclear charge number Z = 1.148 the energy gap (t_lu-h_u), bandwidth (t_3g-a_g) and threshold value (t_3g-h_u) of the ionization energy are 1.70 eV, 11.35 eV and 7.69 eV, respectively. These results are in accord with the experimental values.     

C60分子电子性质的理论研究

根据C₆₀分子的结构特征,构造了电子的局域波函数,在该函数表象下计算了电子格点之间的跳跃能量.对不等性sp³杂化,通过优化计算,当有效核电荷数Z=1.112时,得到的能隙(最低未占据轨道(LUMO)与最高占据轨道(HOMO)之间的能量差)、能带宽度以及电离能阈值分别为1.70eV,12.19eV和8.13eV.这与实验结果符合得较好.与之相应的电子跳跃能量是：最近邻分别为-2.299eV,-2.113eV;次近邻分别为0.103eV,0.170eV;三近邻分别为 关键词：     

强激光照射对6H-SiC晶体电子特性的影响

使用基于密度泛函微扰理论的第一性原理赝势法, 模拟研究了纤锌矿6H-SiC晶体在强激光照射下电子特性的变化. 研究结果表明, 电子温度T_e在升高到3.89 eV及以上后, 6H-SiC由间接带隙的晶体变为直接带隙的晶体; 带隙值随电子温度T_e升高先是增大后又快速减小, 当电子温度T_e大于4.25 eV以后, 带隙已经消失而呈现出金属特性.     

An Improved Study of Electronic Band Structure and Optical Parameters of X-Phosphides (X=B,Al, Ga,In) by Modified Becke-Johnson Potential

We report the electronic band structure and optical parameters of X-Phosphides (X=B, Al, Ga, In) by first-principles technique based on a new approximation known as modified Becke-Johnson (mBJ). This potential is considered more accurate in elaborating excited states properties of insulators and semiconductors as compared to LDA and GGA. The present calculated band gaps values of BP, AlP, GaP, and InP are 1.867 eV, 2.268 eV, 2.090 eV, and 1.377 eV respectively, which are in close agreement to the experimental results. The band gap values trend in this study is as: E_g(mBJ-GGA/LDA) > E_g(GGA) > E_g(LDA). Optical parametric quantities (dielectric constant, refractive index, reflectivity and optical conductivity) which based on the band structure are also presented and discussed. BP, AlP, GaP, and InP have strong absorption in between the energy range 4-9 eV, 4-7 eV, 3-7 eV, and 2-7 eV respectively. Static dielectric constant, static refractive index and coefficient of reflectivity at zero frequency, within mBJ-GGA, are also calculated. BP, AlP, GaP, and InP show significant optical conductivity in the range 5.2-10 eV, 4.3-8 eV, 3.5-7.2 eV, and 3.2-8 eV respectively. The present study endorses that the said compounds can be used in opto-electronic applications, for different energy ranges.     

An Improved Study of Electronic Band Structure and Optical Parameters of X-Phosphides (X=B,Al, Ga,In) by Modified Becke-Johnson Potential

We report the electronic band structure and optical parameters of X-Phosphides (X=B, Al,Ga,In) by first-principles technique based on a new approximation known as modified Becke-Johnson (mBJ). This potential is considered more accurate in elaborating excited states properties of insulators and semiconductors as compared to LDA and GGA. The present calculated band gaps values of BP, AlP, GaP, and InP are 1.867 eV, 2.268 eV, 2.090 eV, and 1.377 eV respectively, which are in close agreement to the experimental results. The band gap values trend in this study is as: Eg (mBJ-GGA/LDA)Eg (GGA) Eg (LDA). Optical parametric quantities (dielectric constant, refractive index, reflectivity and optical conductivity) which based on the band structure are also presented and discussed. BP, AlP, GaP, and InP have strong absorption in between the energy range 4-9eV, 4-7eV, 3-7eV, and 2-7eV respectively. Static dielectric constant, static refractive index and coefficient of reflectivity at zero frequency, within mBJ-GGA, are also calculated. BP, AlP, GaP, and InP show significant optical conductivity in the range 5.2-10eV, 4.3-8eV, 3.5-7.2eV, and 3.2-8eV respectively. The present study endorses that the said compounds can be used in opto-electronic applications, for different energy ranges.     

基于自洽GW方法的碳化硅准粒子能带结构计算

在多体微扰理论的框架下, 分别采用G₀W₀方法和准粒子自洽GW方法计算3C-SiC和2H-SiC的准粒子能级. 由一个平均Monkhorst-Pack网格点上的准粒子能级和准粒子波函数出发, 结合最局域Wannier函数插值, 得到3C-SiC和2H-SiC的自洽准粒子能带结构. 3C-SiC的价带顶在Γ点, 导带底在X点. DFT-LDA, G₀W₀和准粒子自洽GW给出的3C-SiC间接禁带宽度分别为 1.30 eV, 2.23 eV和2.88 eV. 2H-SiC价带顶在Γ 点, 导带底在K点. 采用DFT-LDA, G₀W₀和准粒子自洽GW方法得到的间接禁带宽度分别为2.12 eV, 3.12 eV和 3.75 eV. 计算基于赝势方法, 对于3C-SiC和2H-SiC的准粒子自洽GW计算给出的禁带宽度均比实验值略大.     

强激光照射对2H-SiC晶体电子特性的影响

使用基于密度泛函微扰理论的第一原理赝势法, 计算了纤锌矿结构2H-SiC晶体在强激光照射下的电子特性, 分析了其能带结构和电子态分布. 计算结果表明: 2H-SiC平衡晶格参数a 和c随电子温度T_e的升高逐渐增大; 电子温度在0–2.25 eV范围内时, 2H-SiC仍然是间接带隙的半导体晶体, 当T_e超过2.25 eV达到2.5 eV以上时, 2H-SiC变为直接带隙的半导体晶体; 随着电子温度升高, 导带底和价带顶向高能量或低能量方向发生了移动, 当电子温度T_e大于3.5 eV以后, 价带顶穿越费米能级; 电子温度T_e在0–2.0 eV变化时, 带隙随电子温度升高而增大; T_e在2.0–3.5 eV范围变化时, 带隙随电子温度升高而快速地减少, 表明2H-SiC晶体的金属性随电子温度T_e的继续升高而增强. 在T_e =0, 5.0 eV 处, 计算了2H-SiC晶体总的电子态密度和分波态密度. 电子结构表明T_e =0 eV 时, 2H-SiC 是一个带隙为2.3 eV的半导体; 在T_e =5.0 eV时, 带隙已经消失而呈现出金属特性, 表明当电子温度升高时晶体的共价键变弱、金属键增强, 晶体经历了一个熔化过程, 过渡到金属状态.     

B12-nAlnN12 (n=0, 6, 12) 的稳定性和电子结构研究

通过Al取代B在B12N12中掺杂,基于密度泛函理论对B6Al6N12的稳定性进行了系统研究．表明在B6Al6N12中,Al和B倾向于相对分开．在最稳定结构中,B原子和Al原子分别处在笼的两半．我们还分析了B12-nAlnN12 (n=0, 6, 12)的电子结构,B12N12的能隙为6.84eV,掺Al后其能隙明显变窄,Al12N12和B6Al6N12的能隙分别为3.91eV和4.08eV．NBO分析表明,B12N12中B/N原子的电荷分别为±1.17,Al12N12中Al/N 原子的电荷分别为±1.85．在B6Al6N12中,B/Al原子上的电荷分别为1.06~1.12和1.86~1.91,N原子上的电荷为-1.18~-1.83．     

B12-nAlnN12 (n=0, 6, 12) 的稳定性和电子结构研究

通过Al取代B在B12N12中掺杂,基于密度泛函理论对B6Al6N12的稳定性进行了系统研究．表明在B6Al6N12中,Al和B倾向于相对分开．在最稳定结构中,B原子和Al原子分别处在笼的两半．我们还分析了B12-nAlnN12 (n=0, 6, 12)的电子结构,B12N12的能隙为6.84eV,掺Al后其能隙明显变窄,Al12N12和B6Al6N12的能隙分别为3.91eV和4.08eV．NBO分析表明,B12N12中B/N原子的电荷分别为±1.17,Al12N12中Al/N 原子的电荷分别为±1.85．在B6Al6N12中,B/Al原子上的电荷分别为1.06~1.12和1.86~1.91,N原子上的电荷为-1.18~-1.83．     

第一性原理计算Mo浓度对Mo掺杂BiVO4光催化性能的影响

本文利用基于密度泛函理论的第一性原理研究了不同浓度的Mo掺杂BiVO₄的V位的电子结构、光学性质和光催化性能.缺陷形成能的计算结果说明BiMo_xV_1-xO₄(x=0.0625, 0.125, 0.25)三种掺杂体系都是可以稳定存在的.电子结构计算结果表明：BiMo_xV_1-xO₄(x=0, 0.0625, 0.125, 0.25)四种体系的带隙分别为2.123 eV,2.142 eV,2.160 eV和2.213 eV.掺杂BiVO₄体系的带隙值均大于本征BiVO₄,且带隙随着Mo浓度的增加而增大. BiMo_xV_1-xO₄(x=0.0625, 0.125, 0.25)三种掺杂体系的能带结构全部向低能量区域移动,导致掺杂体系导带底越过费米能级,Mo掺杂BiVO₄后具...     

Si，Ge，Zr和Sn掺杂SrTiO3的电子结构和光催化性能第一性原理研究

使用QUANTUM ESPRESSO(QE)软件包实现的密度泛函理论研究了Si, Ge, Zr和Sn掺杂SrTiO₃的结构,电子结构和光催化性能.使用广义梯度近似(GGA)获得SrTiO₃的晶格常数与先前的实验数据非常一致.同时,获得了SrTi_0.875X_0.125O₃(X=Si, Ge, Zr, Sn)四种掺杂体系的晶格常数. SrTiO₃和SrTi_0.875X_0.125O₃(X=Si, Ge, Zr, Sn)四种掺杂的带隙值分别1.853 eV、1.849 eV、1.916 eV、1.895 eV和1.925 eV.在研究五种SrTiO₃体系的光催化性能时,采用剪刀算符对五种SrTiO₃体系的带隙值进行修正.计算本征SrTiO₃和SrTi_0.875X_0.125O₃     

Fe掺杂GaN光电特性的第一性原理研究

基于密度泛函理论体系,计算了本征GaN材料和12.5%的Fe掺杂GaN体系的光电特性,分析了晶体结构、能带结构和电子态分布、介电函数、吸收系数、折射率、反射率、能量损失谱和消光系数,从理论上讨论了掺杂对体系光电特性的影响.计算所得理想GaN的禁带宽度为3.41 eV,Fe的重掺杂体系明显变窄,为3.06 eV,但仍为直接带隙半导体.本征GaN材料与Fe掺杂GaN体系的静态介电常数为5.74和6.20,折射率为2.39和2.48,能量损失最大值在20.02 eV和18.96 eV,最大吸收系数能量均在13.80 eV左右.计算结果为Fe掺杂GaN高压光电导开关材料及器件的进一步研究提供了有力的理论依据和实验支持.     

Structural,electronic and optical properties of Ca3Bi2: First-principles investigation

In this work by applying first principles calculations structural, electronic and optical properties of Ca₃Bi₂ compound in hexagonal and cubic phases are studied within the framework of the density functional theory using the full potential linearized augmented plane wave (FP-LAPW) approach. According to our study band gap for Ca₃Bi₂ in hexagonal phase are 0.47, 0.96 and 1?eV within the PBE-GGA, EV-GGA and mBJ-GGA, respectively. The corresponding values for cubic phase are 1.24, 2.08 and 2.14?eV, respectively. The effects of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths and anti-symmetry gap are investigated. It is found that the hydrostatic pressure increases the band widths of all bands below the Fermi energy while it decreases the band gap and the anti-symmetry gap. In our calculations, the dielectric tensor is derived within the random phase approximation (RPA). The first absorption peak in imaginary part of dielectric function for both phases is located in the energy range 2.0–2.5?eV which are beneficial to practical applications in optoelectronic devices in the visible spectral range. For instance, hexagonal phase of Ca₃Bi₂ with a band gap around 1?eV can be applied for photovoltaic application and cubic phase with a band gap of 2?eV can be used for water splitting application. Moreover, we found the optical spectra of hexagonal phase are anisotropic along E||x and E||z.     

The importance of electron correlation in graphene and hydrogenated graphene

Local density approximation (LDA) and Green function effective Coulomb (GW) calculations are performed to investigate the effect of electronic correlations on the electronic properties of both graphene and graphane. The size of band gap in graphane increases from 3.7 eV in LDA to 4.9 eV in GW approximation. By calculating maximally localized Wannier wave functions, we evaluate the necessary integrals to get the Hubbard U and the exchange J interaction from first principles for both graphene and graphane. Our ab-initio estimates indicate that in the case of graphene, in addition to the hopping amplitude t ～ 2.8 eV giving rise to the Dirac nature of low lying excitations, the Hubbard U value of ～8.7 eV gives rise to a super-exchange strength of J _AFM ～ 3.5 eV. This value dominates over the direct (ferromagnetic) exchange value of J _FM ～ 1.6 eV. This brings substantial Mott-Heisenberg aspects into the problem of graphene. Moreover, similarly large values of the Hubbard and super-exchange strength in graphane suggests that the nature of gap in graphane has substantial Mott character.     

Threshold fragmentation of atomic and molecular systems by charged particle impact

The Wannier theory –originally derived for the ionisation of atoms by electrons —is extended to general fragmentation reactions which produce three charged particles of arbitrary masses and charges. The center of mass fragmentation cross section and the angular correlation are shown to be given in terms of two energy-independent, characteristic indices as in Wannier's case. These indices vary drastically as a function of masses and charges of the fragments. It is also shown that these indices may have singularities at critical however physical values of charges and masses. In such cases a generalized Wannier threshold law with a suitable, fractional exponent does not exist. The theory developed in this article applies to energies up to several eV above the fragmentation threshold.     

电子-声子作用对卤化铊中Wannier激子结合能的影响

一些作者对卤化铊中Wannier激子的结合能所作的计算值比实验值大一个数量级。我们用过去得到的电子-空穴有效作用势,计算了卤化铊中Wannier激子的结合能,比其他作者所得的结果有了很大的改进。     

Unexpected behavior of the near-threshold double-photoionization cross section of beryllium

The threshold region of the double-photoionization cross section of atomic beryllium was investigated using monochromatized synchrotron radiation. The photon energy dependence of the double-photoionization cross section can be described by the Wannier power law up to 1.7 eV above threshold. However, we unexpectedly find oscillations in the cross section, which are in excellent agreement with a modulated threshold law based on the Coulomb-dipole theory [Phys. Rev. Lett. 49, 365 (1982)]]. This new finding casts some doubts on the general applicability of the Wannier power law.     

高x值混晶Hg1-xCdxTe光吸收边的压力效应

采用金刚石对顶砧高压装置,在0—36kbar流体静压力范围和室温条件下测量了高x值的P型碲镉汞混晶Hg_0.3Cd_0.7Te光吸收边及其随压力的变化。300K下Hg_0.3Cd_0.7Te光学能隙的实验值与用经验公式的计算值一致。用最小二乘法拟合不同压力下的实验结果,得到Hg_0.3Cd_0.7Te能隙的一阶压力系数α=8.7×10^-11eV/Pa,与用化学键介电 关键词：     

Tunable band gap and optical properties of surface functionalized Sc_2C monolayer

Using the density functional theory, we have investigated the electronic and optical properties of two-dimensional Sc_2C monolayer with OH, F, or O chemical groups. The electronic structures reveal that the functionalized Sc_2C monolayers are semiconductors with a band gap of 0.44–1.55 eV. The band gap dependent optical parameters, like dielectric function, absorption coefficients, reflectivity, loss function, and refraction index were also calculated for photon energy up to 20 eV. At the low-energy region, each optical parameter shifts to red, and the peak increases obviously with the increase of the energy gap. Consequently, Sc_2C monolayer with a tunable band gap by changing the type of surface chemical groups is a promising 2D material for optoelectronic devices.     

Huge excitonic effects in layered hexagonal boron nitride

The all-electron GW approximation energy band gap of bulk hexagonal boron nitride is shown to be of indirect type. The resulting computed in-plane polarized optical spectrum, obtained by solving the Bethe-Salpeter equation for the electron-hole two-particle Green function, is in excellent agreement with experiment and has a strong anisotropy compared to out-of-plane polarized spectrum. A detailed analysis of the excitonic structures within the band gap shows that the low-lying excitons belong to the Frenkel class and are tightly confined within the layers. The calculated exciton binding energy is much larger than that obtained by Watanabe et al. [Nat. Mater. 3, 404 (2004).] based on a Wannier model assuming h-BN to be a direct-band-gap semiconductor.