Molecular dynamics simulation of silver bromide nanostructures in single-walled carbon nanotubes

Nanostructures formed upon filling single-walled carbon nanotubes of different diameters (ranging from 11.5 to 17.6 ?) with silver bromide have been investigated using the molecular dynamics method. The results of molecular dynamics computer simulation have demonstrated that, in such tubes, AgBr nanotubes in the form of rolled-up two-dimensional crystalline networks (including structures both with a trigonal coordination and with a tetragonal coordination of ions) can be produced as well as fragments of the NaCltype structure, which is typical of bulk AgBr crystals. In the initial stage of their filling, the carbon nanotubes in the silver bromide melt are deformed, on average, to a greater extent than those in a similar system with AgI. After taking out from the melt, the degree of deformation of the nanotubes decreases and, in the majority of cases, AgBr nanotubular structures based on a hexagonal network are formed inside them.     

(NaZSM-5)-AgI主体-客体纳米复合材料的研究

用热扩散法成功地把AgI组装于NaZSM5的孔道中,对制备的样品(NaZSM5)AgI进行了化学分析、粉末XRD分析、化学吸附、红外光谱表征,研究了所制备的样品固体扩散漫反射吸收光谱及发光性质.化学分析表明,AgI已进入NaZSM5主体中.粉末XRD分析显示了组装AgI后NaZSM5沸石骨架依然存在,红外光谱表明了(NaZSM5)AgI样品骨架振动与NaZSM5的骨架振动有细微差别,这主要是由组装了AgI引起的.吸附研究说明了AgI已进入NaZSM5的孔道.固体扩散漫反射吸收光谱表明,主体NaZSM5对制备的主体客体样品光吸收几乎没有影响,(NaZSM5)AgI的吸收光谱受AgI尺寸大小的影响.发光研究表明,制备的样品能带隙很高,辐射过程很强,(NaZSM5)AgI样品系具有发光功能的复合材料.     

Dynamics of confined excitons and biexcitons of CuCl quantum dots

We investigated the dynamics of confined excitons and biexcitons in CuCl quantum dots in an NaCl matrix by using subpicosecond pump and probe absorption spectra, and time-resolved luminescence spectra. Then temporal changes of the absorption, optical gain, and luminescence are interpreted in relation to the exciton dynamics. The optical nonlinearity is discussed in terms of the exciton-exciton interaction in the quantum dot.     

基于碘化银固定相的薄层色谱-红外光谱联用研究

在分析复杂混合物方面原位薄层色谱-红外光谱联用有巨大潜力,二者联用能够相互取长补短,极大地提高对复杂混合物的解析能力。但因固定相自身的红外吸收能够对样品的检测造成干扰,使该方法进展缓慢。实验应用对中红外光透明的碘化银纳米微粒作为固定相制备薄层层析板,并对碘化银薄层板的层析效果及原位红外光谱检测的可行性进行了初步的研究。通过正交设计实验法优化反应条件,制备出粒径为100 nm左右的碘化银颗粒;应用沉降-挥发法制备薄层层析板,实验表明该薄层板具备分离混合物的能力,且原位红外光谱检测结果表明碘化银作为固定相不干扰样品检测。     

Phase diagram of the bose condensation of dipolar excitons in GaAs/AlGaAs quantum-well heterostructures

Experimental studies of the phase diagram of Bose condensation in a system of spatially indirect dipolar excitons in GaAs/AlGaAs quantum wells are reviewed. The properties of spatially periodic patterns arising in the luminescence of the exciton Bose condensate in a ring-shaped potential trap and the coherence of the condensate luminescence are discussed.     

具有表面修饰的SnO2纳米微晶的光学性质研究

给出了裸的及包裹ＳｎＯ２纳米微晶的吸收、荧光和激发谱的实验结果。发现随着粒子尺寸的减小,包覆一层有机分子的ＳｎＯ２纳米微晶的吸收谱带边向长波方向发生位移,这与裸ＳｎＯ２纳米微晶的结果是不一致。表明纳米晶体的尺寸及其表面状态对它们的光谱性质有很大影响。从量子限域效应和介电限域效应两个方面对实验结果进行了讨论。     

Luminescence and spectroscopy

The connection between luminescence and different chapters of spectroscopy is discussed. Modern theoretical concepts and experimental techniques wiped away the boundaries that traditionally existed between them. Nevertheless, the basic notions of luminescence remain valid. Being focused on the dynamics and kinetics of electronically excited states, luminescence serves as an effective tool in solving numerous problems in contemporary solid-state physics. Electron–phonon interaction, excitons in disordered systems, the emission spectroscopy of the fractional quantum Hall effect and spin injection are discussed as specific examples.     

Nano-confined and copper-defect in wide-bandgap semiconductors

Copper-doped cadmium iodide nanocrystals were synthesized and grown for an investigation of the optical nonlinear effects via the measurements of the second harmonic generation (SHG) and nonlinear transmittance (NLT). The second-order optical susceptibilities in dependences of the size of the nanocrystals as well as of their copper contents were calculated. The observed size dependence demonstrates the nanosized quantum-confined effect, where the quantum confinement dominates the material's electronic and optical properties, with a clear increase in the SHG with decreasing the thickness of the nanocrystals. A dramatic change of the second-order optical response with increasing copper content of the nanocrystals was also observed. Optical absorption of the nanocrystals studied using NLT technique shows a decrease of the two-photon absorption with increasing thickness of the nanocrystals. The obtained results are discussed in details by exploring the photo-induced electron-phonon anharmonic mechanism for noncentrosymmetry of the impure material processes involving quantization.     

Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells

Exciton states in Zn(Cd)Se/ZnMgSSe quantum wells with different diffusion spreading of interfaces are studied by optical spectroscopy methods. It is shown that the emission spectrum of quantum wells at low temperatures is determined by free excitons and bound excitons on neutral donors. The nonlinear dependence of the stationary photoluminescence intensity on the excitation power density and the biexponential luminescence decay are explained by the neutralization of charged defects upon photoexcitation of heterostructures. With the stationary illumination on, durable (about 40 min) reversible changes in the reflection coefficient near the exciton resonances of quantum wells are observed. It is shown that, along with the shift of exciton levels, the spreading of heteroboundaries leads to three effects: an increase in the excitonphonon interaction, an increase in the energy shift between the emission lines of free and bound excitons, and a decrease in the decay time of exciton luminescence in a broad temperature range. The main reasons for these effects are discussed.     

Vanishing of the Mott transition in semiconductor nanocrystals

The dynamics of the system of photoexcited electron–hole pairs in semiconductor nanocrystals of different size with increasing excitation intensity was experimentally studied by utilizing the luminescence spectra of semiconductor-doped glasses in order to elucidate the peculiarities of many-body effects in structures approaching the zero-dimensional limit. Vanishing of effects causing the Mott transition in bulk crystals was observed with decreasing nanocrystal radius, and a new type of transformation of excitons to unbound electron–hole pairs was shown to take place in nanocrystals where the energy shift for electrons and holes due to quantum confinement becomes comparable with the exciton binding energy.     

Temperature dependent time-resolved exciton luminescence in GaAs/AlGaAs quantum wires and dots

Transient photoluminescence of GaAs/AlGaAs quantum wires and quantum dots formed by strain confinement is studied as a function of temperature. At low temperature, luminescent decay times of the wires and dots correspond to the radiative decay times of localized excitons. The radiative decay time can be either longer or shorter than that of the host quantum well, depending on the size of the wires and dots. For small wires and dots (∼ 100 nm stressor), the exciton radiative recombination rate increases due to lateral confinement. Exciton localization due to the fluctuation of quantum well thickness plays an important role in the temperature dependence of luminescent decay time and exciton transfer in quantum wire and dot structures up to at least ∼ 80 K. Lateral exciton transfer in quantum wire and dot structures formed by laterally patterning quantum wells strongly affects the dynamics of wire and dot luminescence. The relaxation time of hot excitons increases with the depth of strain confinement, but we find no convincing evidence that it is significantly slower in quasi 1-D or 0-D systems than in quantum wells.     

Photoluminescence of Er<Superscript>3+</Superscript> ions in layers of quasi-ordered silicon nanocrystals in a silicon dioxide matrix

The spectra and kinetics of photoluminescence from multilayered structures of quasi-ordered silicon nanocrystals in a silica matrix were studied for undoped samples and samples doped with erbium. It was shown that the optical excitation energy of silicon nanocrystals could be effectively transferred to Er³⁺ ions, which was followed by luminescence at a wavelength of 1.5 µm. The effectiveness of energy transfer increased as the size of silicon nanocrystals decreased and the energy of exciting light quanta increased. The excitation of erbium luminescence in the structures was explained based on dipole-dipole interaction (the Förster mechanism) between excitons in silicon nanocrystals and Er³⁺ ions in silica surrounding them.     

Excitons in hybrid organic-inorganic nanostructures

In two-dimensional heterostructures made of semiconductor and organic layers, when resonance between the Wannier and Frenkel excitons is realized, the dipole-dipole interaction coupling them leads to novel effects. First, we discuss the pronounced nonlinear optical properties of the hybrid Frenkel-Wannier excitons appearing when the energy splitting of the excitonic spectrum is large compared to the exciton linewidths (the case of strong resonant coupling). Next, we consider the case of weak resonant coupling for which the Förster mechanism of energy transfer from an inorganic quantum well to an organic overlayer is of great interest: the electrical pumping of excitons in the semiconductor quantum well could be employed to turn on efficiently the organic material luminescence.     

Optical properties of excitons in CdS semiconductor-insulator quantum wires

The characteristic features of the luminescence spectra of CdS semiconductor nanocrystals, crystallized in hollow channels in a dielectric template, are explained in terms of excitonic transitions in semiconductor-insulator quantum wires. The excitonic transition energies agree with the values calculated taking into account the effects of size quantization and the “dielectric enhancement of excitons” — the large increase in the electron-hole attraction as a result of the difference between the permittivities of the semiconductor and insulator. The theoretically computed binding energies of excitons in CdS quantum wires with a diameter of 10 nm reach 170 meV. It is shown that the excitonic transition energy is constant for a wide range of wire diameters. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 3, 216–220 (10 August 1999)     

Time-resolved luminescence spectra of AgBr at high excitation densities

Time-resolved luminescence measurements in AgBr at 1.9K and cw excitation densities up to 100 kW/cm² reveal new emission bands with strong vibrational structure close to the free exciton. Besides the emission of excitons bound to isoelectronic I^- traps two different luminescence systems are separated by making use of their different lifetime and excitation behaviour. The results are discussed in view of the electron-hole-liquid recombination recently found in the investigated spectral range.     

CdSe/CdS核/壳型纳米晶的光谱特性

以巯基乙酸为稳定剂制备了CdSe/CdS核／壳型纳米晶。用光吸收谱（Abs)、光致发光谱（PL）及光致发光激发谱（PLE）研究了CdS壳层对CdSe纳米晶电子结构，从而对其吸收和发光性能的影响。根据PL和PLE的结果以及带边激子精细结构的计算结果，我们用尺寸很小的纳米晶中所形成的基激缔合物解释了PL光谱与吸收边之间较大的Stokes位移。     

Femtosecond optical diagnostics of interlevel energy relaxation in the band gap of silver iodide nanocrystals

The kinetics of the relaxation processes in silver iodide nanocrystals synthesized in a nanoporous silicate glass matrix and excited by femtosecond laser pulses has been experimentally studied. A short-lived characteristic transmission band is found to be formed in the spectral range of exciton absorption of nanocrystals. The specific features of photoexcited-carrier relaxation, which are due to the energy redistribution of captured carriers over levels in the band gap of silver iodide nanocrystals, are considered. The energy transfer relaxation rates are estimated and possible mechanisms of the energy transfer are discussed.     

Excitons in GaAs quantum wells

This paper attempts to summarize some of the salient properties of excitons in GaAs quantum wells and in doing so it will emphasize work at AT&T Bell Labs with which the authors have been associated. Although the text relies heavily on published material, an effort has been made to stress new material, and where feasible, unpublished aspects, e.g., figures, related to earlier work. Topics discussed on the quasi-2D excitons in GaAs quantum well include: their inherent tendency for intrinsic free-exciton emission, exciton binding energies, bound and localized excitons including biexcitons and excitons bound to neutral impurities, effects of n- and p-type modulation and antimodulation doping, and the developments leading to a proposed set of quantum well parameters that results in acceptable fits to the observed exciton transitions for GaAs quantum wells with both square and parabolic potential profiles.     

Synthesis and characterizations of spherical hollow composed of AgI nanoparticle using AgBr as the precursor

Hollow spheres of AgI with an average radius of 100-200 nm have been prepared by a simple reaction between AgBr suspension and KI in the presence of gelatin. Gelatin played a decisive role as an inhibitor of the direct attack of I⁻ ions to AgBr surfaces and coagulation of the growing AgI in producing the spherical AgI particles. The products were characterized by X-ray powder diffraction, transmission electron microscopy, UV-vis absorption spectroscopy and X-ray photoelectron spectra techniques. The band gaps are estimated to be 2.95 eV according to the results of optical measurements of the hollow spheres of AgI.     

Picosecond dynamics and stimulated emissions of excitons in Zn1-xCdxSe/ZnSe quantum wells

The dynamics and stimulated emission processes of the exciton luminescence are studied in quantum wells (QWs) of the Zn_1-xCd_xSe/ZnSe system. A multiquantum well (MQW) structure shows an exciton lifetime of 150-280 ps and a stimulated emission effect due to exciton-exciton scattering as well as due to electron-hole plasma recombination. A combined-QW structure in which a single quantum well (SQW) is located adjacent to MQWs shows a tunneling process of the excitons from the MQWs through the barriers to the SQW. The stimulated emission takes place in the SQW due to phase space filling effects of the excitons. These observed stimulated emission processes are highly related to the blue-laser-diode operation at both low and room temperatures.