Photosensitive fluorinated polyimides with a low dielectric constant based on reaction development patterning

The fluorinated polyimide PI(6FDA/HFBAPP) was prepared by the reaction of 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride (6FDA) with 2,2‐bis[4‐(4‐aminophenoxy)phenyl]hexafluoropropane (HFBAPP) in 1‐methyl‐2‐pyrrolidone/toluene. A multiblock copolyimide with both fluorinated and rigid‐rod segments, PI(6FDA/HFBAPP)(BPDA/2‐DMB), was prepared by the addition of a second dianhydride, 3,3′,4,4′‐biphenyltetracarboxylic dianhydride (BPDA), and a second diamine, 2,2′‐dimethylbenzidine (2‐DMB), to the polyimide main chain. The potential lithographic performance of photosensitive polyimides composed of nonphotosensitive fluorine‐containing polyimides and photosensitive diazonaphthoquinone (DNQ) was studied on the basis of a new imaging principle recently proposed by our laboratory, that is, reaction development patterning. Neat PI(6FDA/HFBAPP) showed a low dielectric constant (?) of 2.41 and a low dissipation factor (tan δ) of 0.0027 at 20 GHz, and a 10‐μm resolution of the fluorinated polyimide/DNQ system was demonstrated with reactive development with a solution including ethanolamine after ultraviolet exposure. Although slight changes in the dielectric properties were observed in the presence of DNQ residues, these values (? = 2.63 and tan δ = 0.0033 at 20 GHz) were low enough for use in microelectronic applications. However, PI(6FDA/HFBAPP)(BPDA/2‐DMB), having a lower coefficient of thermal expansion (CTE; 33 ppm/°C) than PI(6FDA/HFBAPP) (49 ppm/°C), exhibited good positive photosensitivity, whereas the relatively low‐CTE multiblock copolyimide displayed a much higher ? value (3.48 at 1 MHz) than the highly fluorinated polyimide (2.88 at 1 MHz). A film consisting of PI(6FDA/HFBAPP)(BPDA/2‐DMB) and the remaining DNQ derivatives showed a CTE value comparable to that of the neat polyimide film. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 861–871, 2003     

Photosensitive Polyarylates Based on Reaction Development Patterning

Films of a commercially available polyarylate (U polymer®) containing a photosensitive agent were prepared by means of spin‐coating onto copper foil, which showed positive‐tone behavior after UV irradiation and development with an ethanolamine/N‐methylpyrrolidone/H₂O mixture. Scanning electron microscope photographs of the images exhibited fine patterns (≈10 μm line/space resolution) with 9–14 μm film thickness. The pattern‐forming mechanism is based on the reaction development patterning (RDP) process, where the main pattern‐forming reaction occurs during development.     

Lithographic design of photosensitive polyarylates based on reaction development patterning

The factors affecting pattern‐forming properties in reaction development patterning were examined with polyarylates with various bisphenol moieties. The developability of the photosensitive polyarylates was dependent on the properties of the subtituent (R) in the bisphenol moieties. The development time decreased in the following order: R?C(CH₃)₂ > fluorenyl unit ? phenolphthalein unit > C(CF₃)₂ > SO₂. This order agreed with that of the reactivity between the polyarylates and ethanolamine, and these orders can be explained by pK_a of the bisphenol used to prepare the polyarylates. The development with NH₂? R′? OH resulted in successful positive‐tone pattern formation. However, pattern formation with the developers containing NH₂? R′? OCH₃ was unsuccessful. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2694–2706, 2006     

Preparation of a chemically amplified photosensitive polyimide based on norbornene‐end‐capped poly(amic acid ethoxymethylester)

A positive‐working chemically amplified photosensitive polyimide (PSPI) developable with basic aqueous solutions was obtained from poly(amic acid ethoxymethylester) (PAAE) as a polyimide precursor and diphenyliodonium 5‐hydroxynaphthalene‐1‐sulfonate (DINS) as a photoacid generator. The norbornene‐end‐capped PAAE based on 4,4′‐oxydiphthalic anhydride and 4,4′‐oxydianiline exhibited high transparency at 365 nm. The protection ratio of the ethoxymethyl groups was optimized to maximize the difference between the dissolution rates of the exposed and unexposed areas. The acid generated from DINS in the UV‐exposed region effectively deprotected the ethoxymethyl groups of PAAE by a chemical amplification mechanism. A 10‐μm‐thick film of the PSPI precursor system containing 16 wt % DINS exhibited a sensitivity (D^o) of 1100 mJ cm^?2 when developed with a 2.38 wt % aqueous tetramethyl ammonium hydroxide solution at room temperature. A fine, positive, 5‐μm line‐and‐space pattern was fabricated in a 15‐μm‐thick film with 1500 mJ cm^?2 of UV exposure. This resolution is excellent in comparison with those previously reported for chemically amplified PSPIs, and such a film can thus be used as a buffer coating in semiconductor packaging. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 43: 5520–5528, 2005     

New synthetic route for photosensitive poly(benzoxazole)

A new positive working photosensitive poly(benzoxazole) (PBO) precursor based on poly(o‐hydroxyazomethine) ( 3 ) and 1‐{1,1‐bis[4‐(2‐diazo‐1‐(2H)naphthalenone‐5‐sulfonyloxy)phenyl]ethyl}‐4‐{1‐[4‐(2‐diazo‐1(2H)naphthalenone‐5‐sulfonyloxy)phenyl]methylethyl}benzene (S‐DNQ) as a photosensitive compound was developed. 3 was prepared by the condensation of 2,2‐bis(3‐amino‐4‐hydroxyphenyl)hexafluoropropane with isophthalaldehyde in 1‐methyl‐2‐pyrrolidinone/toluene under azeotropic conditions. The photosensitive PBO precursor containing 30 wt % S‐DNQ showed a sensitivity of 120 mJ cm^?2 and a contrast of 2.2 when it was exposed to 436‐nm light and developed with a 2.38 wt % aqueous tetramethylammonium hydroxide solution at room temperature. A fine positive image featuring 10‐μm line and space patterns was observed on the film of the photoresist exposed to 200 mJ cm^?2 ultraviolet light at 436 nm by the contact mode. The positive image was successfully converted into the PBO pattern by a thermal treatment. © 2002 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 40: 3399–3405, 2002     

Novel positive‐working and aqueous‐base‐developable photosensitive poly(imide benzoxazole) precursor

A novel positive‐working and aqueous‐base‐developable photosensitive poly(imide benzoxazole) precursor based on a poly(amic acid hydroxyamide) bearing phenolic hydroxyl groups and carboxylic acid groups, a diazonaphthoquinone (DNQ) photosensitive compound, and a solvent was developed. Poly(amic acid hydroxyamide) was prepared through the polymerization of 2,2‐bis(3‐amino‐4‐hydroxyphenyl)hexafluoropropane, trimellitic anhydride chloride, and 4,4′‐oxydibenzoyl chloride. Subsequently, the thermal cyclization of the poly(amic acid hydroxyamide) precursor at 350 °C produced the corresponding poly(imide benzoxazole). The inherent viscosity of the precursor polymer was 0.17 dL/g. The cyclized poly(imide benzoxazole) showed a high glass‐transition temperature of 372 °C and 5% weight loss temperatures of 535 °C in nitrogen and 509 °C in air. The structures of the precursor polymer and the fully cyclized polymer were characterized with Fourier transform infrared and ¹H NMR. The photosensitive polyimide precursor containing 25 wt % DNQ photoactive compound showed a sensitivity of 256 mJ/cm² and a contrast of 1.14 in a 3‐μm film with a 0.6 wt % tetramethylammonium hydroxide developer. A pattern with a resolution of 5 μm was obtained from this composition. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 5990–5998, 2004     

A positive-working photosensitive alkaline-developable polyimide with a highly dimensional stability and low dielectric constant based on poly(amic acid) as a polyimide precursor and diazonaphthoquinone as a photosensitive compound

A positive-working photosensitive polyimide precursor based on fluorinated poly(amic acid) (FPAA) and 2,3,4-tris(1-oxo-2-diazonaphthoquinon-4-ylsulfonyloxy)benzophenone (D4SB) as a photosensitive compound has been developed. FPAA was prepared by ring-opening polyaddition of dianhydrides, pyromellitic dianhydride and biphenyltetracarboxylic dianhydride, with diamine, 2,2′-bis(trifluoromethyl)benzidine, in methanol. The FPAA film showed excellent transparency to UV light and good solubility in a wide range of organic solvents. The dissolution behavior of FPAA containing 30 wt % D4SB after exposure was studied, and it was found that the difference of dissolution rate between exposed and unexposed parts was enough to get high contrast due to the photochemical reaction of D4SB in the polymer film. The photosensitive fluorinated polyimide (FPI) precursor containing 30 wt % D4SB showed a sensitivity of 80 mJ cm⁻² and a contrast of 7.8 with 365 nm light when it was developed with 0.3% aqueous tetramethyl ammonium hydroxide solution at room temperature. The FPI film cured up to 360°C had a low coefficient of thermal expansion of 10.3 ppm °C⁻¹ and a low dielectric constant of 3.04. © 1998 John Wiley & Sons, Inc. J. Polym. Sci. A Polym. Chem. 36: 2261–2267, 1998     

Low‐CTE photosensitive polyimide based on semialicyclic poly(amic acid) and photobase generator

A negative‐type photosensitive polyimide (PSPI) based on semialicyclic poly(amic acid) (PAA), poly(trans‐1,4‐cyclohexylenediphenylene amic acid), and {[(4,5‐dimethoxy‐2‐nitrobenzyl)oxy]carbonyl} 2,6‐dimethylpiperidine (DNCDP) as a photobase generator has been developed as a next‐generation buffer coat material. The semialicyclic PAA was synthesized from 3,3′,4,4′‐biphenyltetracarboxylic dianhydride and trans‐1,4‐cyclohexyldiamine in the presence of acetic acid, and the PAA polymerization solution was directly used for PSPI formulation. This PSPI, consisting of PAA (80 wt %) and DNCDP (20 wt %), showed high sensitivity of 70 mJ/cm² and high contrast of 10.3, when it was exposed to a 365‐nm line (i‐line), postexposure baked at 190 °C for 5 min, and developed with 2.38 wt % tetramethylammonium hydroxide aqueous solution containing 20 wt % isopropanol at 25 °C. A clear negative image of 6‐μm line and space pattern was printed on a film, which was exposed to 500 mJ/cm² of i‐line by a contact printing mode and fully converted to poly(trans‐1,4‐cyclohexylenebiphenylene imide) pattern upon heating at 250 °C for 1 h. The PSPI film had a low coefficient of thermal expansion of 16 ppm/K compared to typical PIs, such as prepared from 3,3′,4,4′‐biphenyltetracarboxylic dianhydride and 4,4′‐oxydianiline. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 48: 1317–1323, 2010     

Direct patterning of poly(amic acid) and low‐temperature imidization using a crosslinker,a photoacid generator,and a thermobase generator

A positive‐type photosensitive polyimide (PSPI) based on poly(amic acid) (PAA), a crosslinker 1,1,1‐tris{4‐[2‐(vinyloxy)ethoxy]phenyl}ethane (TVPE), a photoacid generator (PAG) (5‐propylsulfonyloxyimino‐5H‐thiophen‐2‐ylidene)‐2‐(methylphenyl)acetonitrile (PTMA), and a thermobase generator (TBG) t‐butyl 2,6‐dimethylpiperidine‐1‐carboxylate (BDPC) has been developed as a promising material in microelectronics. The PAA was prepared from 3,3′,4,4′‐biphenyltetracarboxylic dianhydride (BPDA) and 4,4′‐oxydianiline (ODA) in dimethyl sulfoxide (DMSO). The PSPI, consisting of PAA (69 wt %), TPVE (21 wt %), PTMA (3 wt %), and BDPC (7 wt %), showed high sensitivity of 21 mJ/cm² and a high contrast of 6.8 when it was exposed to a 436‐nm line (g‐line), postbaked at 90 °C for 5 min, and developed with 1.69 wt % TMAHaq. A clear positive image of 8 μm line and space pattern was printed on film, which was exposed to 50 mJ/cm² of g‐line by a contact printing mode and fully converted to the corresponding polyimide (PI) pattern on heating at 200 °C, confirmed by FTIR spectroscopy. Thus, this system will be a good candidate for next generation PSPIs. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 3362–3369, 2009     

Ene Reaction with Pummerer-Type Reaction Intermediate of α-(Methylthio)isobutyl Acetamide: A New Synthesis of Pellitorine

Pummerer-type reaction intermediate 2 of α-(methylthio)isobutyl acetamide ( 1 ) has been found to react with 1-alkenes to afford ene adducts 3 . Pellitorine 4 was synthesized from the adduct 3d.     

Ene Reaction of Pummerer‐type Reaction Intermediate of (Methylthio)Acetonitrile: Synthesis of Dienenitriles

Pummerer‐type reaction intermediate 2 of (methylthio)acetonitrile ( 1 ) has been found to react with 1‐alkenes to afford ene adducts 3 . Dienenitriles ( 4 ) were synthesized from adducts 3 .     

Reaction of Hydroxyurea with Iron(III): Products and the Stoichiometry of the Redox Reaction

Products and reaction stoichiometry of the interaction between iron(III) and hydroxyurea (HU) in aqueous solutions were studied. Under condition of an excess of iron(III) over hydroxyurea, initially formed mono(hydroxyureato)iron(III) complex decomposed through redox processes, forming two moles of Fe^II, one mole of NH₄⁺, one mole of CO₂, and 0.5 mole of N₂O per 1 mole of initially present HU. Hydroxyurea radical, H₂N‐CO‐NHO^?, was detected in the course of the reaction. The possible mechanism of the formation of the products is discussed and compared with that obtained for horseradish peroxidase mediated oxidation of hydroxyurea with hydrogen peroxide. The possibility of direct reaction of hydroxyurea with the iron center of protein R2 of the ribonucleotide reductase is proposed. The reaction examined may serve as a simple model for testing the suggested hydroxyurea like activity for chemical substances.     

一类含多氟烷基侧链的螺环化合物的合成及结构表征

A series of spiro compounds have been synthesized via several steps.The structure of these compounds wereconfirmed by ~1H NMR,~(13)C NMR,IR,MS spectra and X-ray diffraction analysis.The possible mechanism to formthese products was also proposed.     

Poly(ether imide)s derived from phthalazinone‐containing dianhydrides

An unsymmetrical and noncoplanar heterocyclic dianhydride was synthesized from a bisphenol‐like phthalazinone, 4‐(4‐hydroxylphenyl)‐2,3‐phthalazin‐1‐one, and a series of novel poly(ether imide)s based on it, with intrinsic viscosities of 0.67–1.42 dL/g, were obtained by one‐step solution polymerization in m‐cresol at 200 °C for 20 h. The polymers were readily soluble in N‐methyl‐2‐pyrrolidinone and m‐cresol. The poly(ether imide)s derived from 4,4′‐oxydianiline and 4,4′‐methylenedianiline were also very soluble in chloroform, 1,1′,2,2′‐tetrachloroethane, and N,N‐dimethylacetamide. The glass‐transition temperatures were 289–326 °C, as determined by differential scanning calorimetry. All the degradation temperatures for 5% weight loss occurred above 482 °C in nitrogen. The tensile strength of thin films of some of the polymers varied from 103.1 to 121.4 MPa. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 6089–6097, 2004     

New poly (amide-imide) syntheses. IX. Preparation and properties of poly(amide-imide)s derived from 2,7-bis (4-aminophenoxy) naphthalene and various bis (trimellitimide)s

Eleven bis(phenoxy) naphthalene-containing poly(amide-imide)s IIIa–k were synthesized by the direct polycondensation of 2,7-bis (4-aminophenoxy) naphthalene (DAPON) with various aromatic bis (trimellitimide)s IIa–k in N-methyl-2-pyrrolidone (NMP) using triphenyl phosphite and pyridine as condensing agents. Poly (amide-imide)s IIIa–k having inherent viscosities of 0.70–1.12 dL/g were obtained in quantitative yields. The polymers containing p-phenylene or bis(phenoxy) benzene units exhibited crystalline x-ray diffraction patterns. Most of the polymers were readily soluble in various solvents such as NMP, N, N-dimethylacetamide, dimethyl sulfoxide, m-cresol, o-chlorophenol, and pyridine, and gave transparent, and flexible films cast from DMAc solutions. Cast films showed obvious yield points in the stress-strain curves and had strength at break up to 87 MPa, elongation to break up to 11%, and initial modulus up to 2.10 GPa. These poly(amide-imide)s had glass transition temperatures in the range of 255–321°C, and the 10% weight loss temperatures were recorded in the range of 529–586°C in nitrogen. The properties of poly(amideimide)s IIIa–k were compared with those of the corresponding isomeric poly (amide-imide)s III′ prepared from 2,7-bis(4-trimellitimidophenoxy) naphthalene and aromatic diamines. © 1994 John Wiley & Sons, Inc.     

手性催化剂(4R)-苄氧基-(S)-脯氨酸的合成及其对不对称羟醛反应的催化活性

手性催化剂(4R)-苄氧基-(S)-脯氨酸的合成及其对不对称羟醛反应的催化活性;羟醛反应     

铜(II)与四(间甲基)苯基卟啉镉(II)取代反应动力学

用分光光度法研究了二甲亚砜溶液中, 氯化铜与meso-四(间甲基)苯基卟啉镉(Ⅱ)(Cd(Ⅱ)P)亲电取代反应的动力学. 讨论了影响反应的因素, CuCl_2+Cd(Ⅱ)P→Cu(Ⅱ)P+CdCl_2提出了反应机理并进行了验证. 用AST286微机对实验数据进行非线性最小二乘法拟合, 得到拟合曲线及似平衡步的平衡常数K及其它基元步骤的速率常数k_1, k_(-1), k_2. 研究了温度对反应的影响, 求得似平衡步的△_rH_m~-θ-, △_rS_m~-θ-及其它基元步骤的活化参数△~≠H_m, △~≠S_m.     

Ene Reaction with Pummerer-Type Reaction Intermediate of 1-[(2-Methylthio)ethanoyl]pyrrolidine: A Novel Synthesis of Trichonine

Pummerer-type reaction intermediate 2 of 1-[(2-methylthio)ethanoyl]pyrrolidine (1) has been found to react with 1-alkenes to afford ene adducts 3 . Trichonine 4 was synthesized from the adduct 3g .     

Synthesis and characterization of negative‐type photosensitive hyperbranched polyimides with excellent organosolubility from an A2 + B3 monomer system

A series of photosensitive hyperbranched polyimides (HB‐PIs) were prepared through facile end‐group modifications of the fully imidized polymer. A triamine, 1,3,5‐tris(4‐aminophenoxy)benzene, and a dianhydride, 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride, were condensed with a dropwise addition method in a molar ratio of 1/2 to afford an anhydride‐terminated poly(amic acid) precursor, which was then end‐capped by 4‐aminophenol and chemically imidized to yield a phenol‐terminated HB‐PI. The modifications of the terminal phenol groups of the polyimide by acyl chloride compounds (acryloyl chloride, methylacryloyl chloride, and cinnamoyl chloride) gave the target polymers. The photosensitive HB‐PIs showed good thermal properties and excellent solubility even in low‐boiling‐point solvents at room temperature, such as acetone, 1,1,2‐trichloroethane, tetrahydrofuran, and chloroform. Photosensitive property studies revealed good photolithographic properties with a resolution greater than 3 μm and a sensitivity of 650–680 mJ/cm². © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 1735–1744, 2004     

二苯基膦乙酸钯催化suzuki偶联反应合成联苯类含氟液晶

液晶化合物;suzuki偶联反应;二苯基膦乙酸钯;配位催化