Electronic structure and optical properties of Nb-doped Sr2TiO4 by density function theory calculation

This paper investigates the effect of Nb doping on the electronic structure and optical properties of Sr2TiO4 by the first-principles calculation of plane wave ultra-soft pseudo-potential based on density functional theory(DFT).The calculated results reveal that due to the electron doping,the Fermi level shifts into conduction bands(CBs) for Sr2 Nb x Ti1 x O4 with x=0.125 and the system shows n-type degenerate semiconductor features.Sr2TiO4 exhibits optical anisotropy in its main crystal axes,and the c-axis shows the most suitable crystal growth direction for obtaining a wide transparent region.The optical transmittance is higher than 90% in the visible range for Sr2 Nb 0.125Ti0.875O4.     

First-principles study of La and Sb-doping effects onelectronic structure and optical properties of SrTiO3

The effects of La and Sb doping on the electronic structure and optical properties of SrTiO 3 are investigated by first-principles calculation of the plane wave ultra-soft pseudo-potential based on density functional theory. The calculated results reveal that corner-shared TiO 6 octahedra dominate the main electronic properties of SrTiO 3 , and its structural stability can be improved by La doping. The La 3+ ion fully acts as an electron donor in Sr 0.875 La 0.125 TiO 3 and the Fermi level shifts into the conduction bands (CBs) after La doping. As for SrSb 0.125 Ti 0.875 O 3 , there is a distortion near the bottom of the CBs for SrSb 0.125 Ti 0.875 O 3 after Sb doping and an incipient localization of some of the doped electrons trapped in the Ti site, making it impossible to describe the evolution of the density of states (DOS) within the rigid band model. At the same time, the DOSs of the two electron-doped systems shift towards low energies and the optical band gaps are broadened by about 0.4 and 0.6 eV for Sr0.875La0.125TiO3 and SrSb0.125Ti0.875O3 , respectively. Moreover, the transmittance of SrSb0.125Ti0.875O3 is as high as 95% in most of the visible region, which is higher than that of Sr0.875La0.125TiO3 (85%). The wide band gap, the small transition probability and the weak absorption due to the low partial density of states (PDOS) of impurity in the Fermi level result in the significant optical transparency of SrSb0.125 Ti0.875 O3 .     

萤石结构TiO2的电子结构和光学性质

利用第一性原理计算了立方相萤石TiO₂的晶胞参数,能带结构和电子态密度.结果显示萤石TiO₂属于间接带隙半导体材料,其间接禁带宽度(Γ→X)E_g为2.07eV,比常见的金红石和锐钛矿TiO₂的禁带宽度窄.为了更清楚地了解萤石的光学性质,利用Kramers-Kronig色散关系,分别对萤石和金红石TiO₂的复介电常数、吸收率等参数进行了计算,并将二者结果做了 关键词： 2')" href="#">萤石结构TiO₂ 密度泛函理论 能带结构 光学性质     

萤石结构TiO2的电子结构和光学性质

利用第一性原理计算了立方相萤石TiO₂的晶胞参数，能带结构和电子态密度.结果显示萤石TiO₂属于间接带隙半导体材料，其间接禁带宽度(Γ→X)E_g为2.07eV，比常见的金红石和锐钛矿TiO₂的禁带宽度窄.为了更清楚地了解萤石的光学性质，利用Kramers-Kronig色散关系，分别对萤石和金红石TiO₂的复介电常数、吸收率等参数进行了计算，并将二者结果做了     

Electronic structure and thermodynamic properties of LiBC under high pressure

This paper investigates the electronic structure and thermodynamic properties of LiBC in the hexagonal structure by using the generalized gradient approximation （GGA） and local density approximation correction scheme in the frame of density functional theory. The geometric structure of LiBC under zero pressure, and the dependences of the normalized lattice parameters a/ao and c/co, the ratio e/a, the normalized primitive volume V/Vo on pressure are given. The thermodynamic quantity （including the heat capacity Cv, Debye temperature 6~D, thermal expansion a and Grfineisen parameter -y） dependences on temperature and pressure are obtained through the GGA method and the quasi-harmonic Debye model. The band structures and density of state of LiBC under different pressures have also been analysed.     

Investigation of electronic structure of Nd-doped TiO2 nanoparticles using synchrotron radiation photoelectron spectroscopy

Doping with transition metal ions in TiO₂ has been found effective to modify the electronic structure of TiO₂ nanoparticles. Application of synchrotron radiation photoelectron spectroscopy (SRPES) to Nd-doped TiO₂ nanoparticles revealed that there existed different peak positions and structure with different doping concentration in the valence band spectra. From the onset of valence band spectrum, it was observed that doping Nd ions alters the electronic structure and makes the band gap of TiO₂ narrow.     

Electronic structure of O-doped SiGe calculated by DFT+U method

To more in depth understand the doping effects of oxygen on Si Ge alloys, both the micro-structure and properties of O-doped Si Ge(including: bulk,(001) surface, and(110) surface) are calculated by DFT + U method in the present work.The calculated results are as follows.(i) The(110) surface is the main exposing surface of Si Ge, in which O impurity prefers to occupy the surface vacancy sites.(ii) For O interstitial doping on Si Ge(110) surface, the existences of energy states caused by O doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers.(iii) The finding about decreased surface work function of O-doped Si Ge(110) surface can confirm previous experimental observations.(iv) In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-Si Ge-based solar cells in the future.     

Electronic structure and optical property of boron doped semiconducting graphene nanoribbons

We present a system study on the electronic structure and optical property of boron doped semiconducting graphene nanoribbons using the density functional theory. Energy band structure, density of states, deformation density, Mulliken popular and optical spectra are considered to show the special electronic structure of boron doped semiconducting graphene nanoribbons. The C—B bond form is discussed in detail. From our analysis it is concluded that the Fermi energy of boron doped semiconducting graphene nano...     

PbWO4电子结构的密度泛函计算

采用基于密度泛函理论的相对论性离散变分和嵌入团簇方法模拟计算了PbWO₄晶体的本征能级结构.发现价带主要由O2p轨道组成,含有部分W5d轨道;导带主要由W5d和O2p的轨道组成.发现导带底由Pb6p_1/2的狭窄能级占有.禁带宽度和价带宽度分别约为4.8和4eV.计算结果很好地解释了实验得到的反射谱,并从理论上分析了PbWO₄晶体蓝光的发光模型. 关键词： 密度泛函 电子结构 4')" href="#">PbWO₄     

Zn,Cd掺杂AlN电子结构的第一性原理计算

基于密度泛函理论(DFT)框架下的第一性原理的平面波超软赝势方法(USPP),对Zn,Cd掺杂AlN的32原子超原胞体系进行了几何结构优化,从理论上给出了掺杂和非掺杂体系的晶体结构参数。计算了掺杂AlN晶体的结合能、电子态密度、差分电荷密度,并对计算结果进行了细致的分析。计算结果表明,Cd、Zn都可以提供很多的空穴态,是良好的p型掺杂剂,但是相对于Cd, Zn原子在AlN晶体中的溶解度更大,并且可以提供更多的空穴,有利于形成更好的p型电导。     

富勒烯C20分子器件的电子结构和传导特性

运用基于密度泛函理论和基于非平衡格林函数的第一性原理方法研究了富勒烯C₂₀分子及连接电极构成的C₂₀分子器件的电子结构及电子输运性质.构建了三个基于C₂₀分子的嵌入K和Si原子的电子输运系统,并得到了电子透射谱和分子轨道分布.分析了三种器件的电子结构和输运性质的产生原因,说明C₂₀分子器件的电子传导主要集中在外壳.在C₂₀分子空笼中嵌入K和Si原子后,其电子输运仍然主要集中于富勒烯C₂₀的外壳. 关键词： 20分子')" href="#">富勒烯C₂₀分子 电子结构 电子传导     

CuI晶体缺陷态电子结构及其施主-受主对发光机理的研究

运用相对论密度泛函理论和嵌入分子团簇方法，模拟计算了具有γ相CuI晶体的本征缺陷态电子结构.结果表明，四面体间隙Cu和Cu空位最有可能在禁带中引入浅施主和受主能级，从而形成施主-受主对(DAP)，产生420—430 nm的DAP复合发光. 关键词： γ-CuI晶体 密度泛函理论 电子结构 发光机理     

高压下氧化镉弹性性质、电子结构和光学性质的第一性原理研究

 运用基于密度泛函理论的平面波赝势方法（PWP）,计算研究了氧化镉NaCl结构（B1结构）和CsCl结构（B2结构）在不同压力条件下的几何结构、弹性性质、电子结构和光学性质。交换关联能分别采用广义梯度近似（GGA）和局域密度近似（LDA）。通过比较计算和实验得到的晶格常数和体模量不难发现,LDA的计算结果更符合实验值。在高压的作用下,两种结构的导带能级有向高能级移动的趋势,而价带能级有向低能级移动的趋势,因此直接带隙变大。同时,对照态密度分布图及高压下能级的移动情况,分析了CdO两种结构在高压作用下的光学性质。     

FeS2(pyrite)电子结构与光学性质的密度泛函计算

采用局域密度近似的自洽密度泛函理论计算了FeS2的电子结构与光学性质。费米能级附近区域的能带与态密度计算表明价带极大值在X（100）点和导带极小值在G（000）点，直接带隙和音接带隙分别为0.74eV、0.6eV。并用电子结构信息精确计算了介质极化矩阵元，从而给出了FeS2的介电函数虚部及相关光学参量，理论结果与实验符合甚佳。     

FeS2(100)表面原子几何与电子结构的理论研究

采用密度泛函理论研究了FeS2(100)表面原子几何与电子结构.理论计算结果表明:FeS2(100)表面无弛豫、无重构,是体相原子几何的自然终止.与体相电子结构相比,FeS2(100)表面电子特性明显不同,禁带中央产生新的表面态,且表面态局域性强,主要由Fe原子的3d分波贡献.配位场理论定性分析表明:FeS2(100)完整晶面表面态产生机制是Fe原子的配位数减少、局部对称性下降所致 关键词： 密度泛函理论 表面电子结构 FeS2     

MnTe电子结构和磁性的第一性原理研究

采用基于密度泛函理论的赝势投影缀加波方法, 对六种典型的二元晶体结构Rocksalt (RS), Cesiun-chloride (CC), Zinc-blende (ZB), Wurtzite (WZ), Iron-silicide (IS) 和Nickel-Arsenide (NA)的MnTe进行了计算研究. 通过比较六种结构的结合能, 确定了MnTe的基态结构是反铁磁的NA结构. 研究了这六种结构MnTe的电子结构、磁性, 并用Birch-Murnaghan状态方程拟合求得了各相结构的体弹性模量和相变压. 电子态密度表明, RS, CC和IS结构的MnTe为反铁磁导体, ZB, WZ和NA结构的MnTe均为反铁磁半导体.     

First-principles study of elastic and electronic properties of layered ternary nitride SrZrN2 under pressure

The structural, elastic, and electronic properties of SrZrN₂ under pressure up to 100?GPa have been carried out with first-principles calculations based on density functional theory. The calculated lattice parameters at 0?GPa and 0?K by using the GGA-PW91-ultrasoft method are in good agreement with the available experimental data and other previous theoretical calculations. The pressure dependence of the elastic constants and the elastic-dependent properties of SrZrN₂, such as bulk modulus B, shear modulus G, Young's modulus E, Debye temperature Θ, shear and longitudinal wave velocity V_S and V_L, are also successfully obtained. It is found that all elastic constants increase monotonically with pressure. When the pressure increases up to 140?GPa, the obtained elastic constants do not satisfy the mechanical stability criteria and a phase transition might has occurred. Moreover, the anisotropy of the directional-dependent Young's modulus and the linear compressibility under different pressures are analysed for the first time. Finally, the pressure dependence of the total and partial densities of states and the bonding property of SrZrN₂ are also investigated.     

关于Al_nC和Al_nC~+(n=1—8)团簇结构和稳定性的研究

通过采用7种密度泛函理论DFT方法对AlnC进行计算,所得结果与实验数据比较,选择了B3lyp方法和6-311G(d)基组对AlnC及AlnC+(n=1—8)团簇进行结构优化和频率分析,得到了AlnC及AlnC+基态以及亚稳态结构.当n从小到大变化时,这些团簇的结构从平面向立体过渡,平面构型以三角形为主,立体构型主要是三棱柱笼状结构;在这些团簇中的高对称性结构中,中性团簇和阳离子只能有其一是稳定构型;在所研究的团簇中,Al2C和Al5C团簇较为稳定.     

DFT study on the structure and spectra of GasP5 cluster

In this paper, possible structures of GasP5 cluster were optimized by using density functional method with generalized gradient correction （B3LYP）. The electronic structure of the isomers with lower energy was studied. The most stable structure obtained for GasP5 is a distorted pentaprism. The Ga-P bond formed in the cluster is strongly ionic. Based on NBO analysis, an average value of 0.59 electron transfers from Gallium to Phosphorus. The bond length 2.33-2.43 is around the value in bulk GaP. The HOMO-LUMO gap is about 2.2 eV. The dipole moment and polarizability are calculated, and the IR and Raman spectra are also presented.     

Mg和Zn掺杂CuAlS2电子结构的分析

从能带结构和态密度分析了黄铜矿CuAlS₂的电子结构.对比未掺杂CuAlS₂,从晶体结构、电子结构、电荷密度分布讨论了Mg和Zn替位Al掺杂对CuAlS₂的影响.结果表明:Mg和Zn掺杂CuAlS₂都导致晶格常数增大,Mg掺杂晶胞体积增大更多;掺杂在价带顶引入受主态,形成p型电导;Mg掺杂比Zn掺杂的受主能级电离能略小;而Zn掺杂CuAlS₂体系总能更低,晶格结构更稳定. 关键词： 2')" href="#">CuAlS₂ p型掺杂 电子结构 能带结构