Z-scan determination of the third-order optical nonlinearity of a triphenylmethane dye using 633 nm He–Ne laser

The third-order nonlinear optical response of a triphenylmethane dye (Acid blue 7) was studied using the Z-scan technique with a continuous-wave He–Ne laser radiation at 633 nm. The magnitude and sign of the third-order nonlinear refractive index n₂ of aqueous solution of Acid blue 7 dye were determined; the negative sign indicates a self-defocusing optical nonlinearity in the sample studied. The negative nonlinear refractive index n₂ and nonlinear absorption coefficient β were estimated to be −1.88 × 10⁻⁷ cm²/W and −3.08 × 10⁻³ cm/W, respectively, corresponding to Re(χ⁽³⁾) = −8.35 × 10⁻⁶ esu, and Im(χ⁽³⁾) = −6.88 × 10⁻⁷ esu. The experimental results show that Acid blue 7 dye have potential applications in nonlinear optics.     

Structural and optical properties of thermally evaporated Bi2Te3 films

Bi₂Te₃ films were prepared by thermal evaporation technique. X-ray diffraction analysis for as-deposited and annealed films in vacuum at 150 °C were polycrystalline with rhombohedral structure. The crystallite size is found to increase as the film thickness increases and has values in the range 67–162 nm. The optical constants (the refractive index, n, and absorption index, k) were determined using transmittance and reflectance data in the spectral range 2.5–10 μm for Bi₂Te₃ films with different thicknesses (25–99.5 nm). Both n and k are independent on the film thickness in the investigated range. It was also found that Bi₂Te₃ is a high refractive index material (n has values of 4.7–8.8 in the wavelength range 2.5–10 μm). The allowed optical transitions were found to be direct optical transitions with energy gap  eV. The optical conductivities σ₁ = ƒ(hν) and σ₂ = f(hν) show distinct peaks at about 0.13 and 0.3 eV, respectively. These two peaks can be attributed to optical interband transitions.     

20GeS2·80Sb2S3硫系玻璃的析晶行为及动力学机理研究

实现玻璃微晶化过程控制的基础是要充分认识其析晶行为及动力学机理. 利用示差扫描量热法和析晶热处理等手段, 研究发现 20GeS₂·80Sb₂S₃硫系玻璃属于表面析晶, 在268℃(T_g+30℃)下热处理60 h, 可以获得表面约40 μm的Sb₂S₃晶层复合玻璃陶瓷样品. 在此基础上, 利用非等温法从理论上分析该玻璃的析晶动力学机理. 计算得到其析晶活化能E_c为(223.6±24.1)kJ·mol^-1, 在热处理温度(268℃)下的析晶速率常数K为1.23×10^-4 s^-1, 属于较难析晶的玻璃组成; 玻璃的晶体生长指数m和晶体生长维数n均为2, 表明其Sb₂S₃相的析晶行为是二维生长过程, 与析晶实验结果完全相符. 由此可知, 对于Sb₂S₃晶体复合的硫系玻璃陶瓷样品可通过玻璃粉末压片烧结、带铸法或丝网印刷法制备获得, 为今后功能硫系玻璃的开发提供实验依据和理论指导. 关键词： 硫系玻璃 微晶化 析晶动力学 析晶行为     

Picosecond nonlinear optical response of Ba0.5Sr0.5TiO3 thin films fabricated by pulsed laser deposition

Well-crystallized Ba_0.5Sr_0.5TiO₃ thin films with good surface morphology were prepared on MgO(1 0 0) substrates by pulsed laser deposition technique at a deposition temperature of 800 °C under the oxygen pressure of 2 × 10⁻³ Pa. X-ray diffraction and atomic force microscopy were used to characterize the films. The full width at half maximum of the (0 0 2) Ba_0.5Sr_0.5TiO₃ rocking curve and the root-mean-square surface roughness within the 5 μm × 5 μm area were 0.542° and 0.555 nm, respectively. The nonlinear optical properties of the films were determined by a single beam Z-scan method at a wavelength of 532 nm with laser duration of 55 ps. The results show that Ba_0.5Sr_0.5TiO₃ thin films exhibit a fast third-order nonlinear optical response with the nonlinear refractive index and nonlinear absorption coefficient being n₂ = 5.04 × 10⁻⁶ cm²/kW and β = 3.59 × 10⁻⁶ (m/W), respectively.     

The thermal spreading of antimony oxides onto Fe2O3

The uniform antimony-rich surface layer on Fe₂O₃ was carried out via thermal spreading of Sb₂O₃ and Sb₂O₄. TG–DTA results indicate that the oxidation temperature of Sb₂O₃ was decreased ca. 100 K due to thermal spreading effect. Although Sb₂O₄ is almost catalytically inert for oxidation of isobutane and Fe₂O₃ is a typical non-selective catalyst for this reaction, the formation of antimony-rich layer suppresses the combustion reactions and favors the partial oxidation reactions. When Sb₂O₄ instead of Sb₂O₃ was used as antimony resource, the enrichment of antimony on Fe₂O₃ surface was much lower. However, the reaction atmosphere of isobutane oxidation enhances antimony spreading over Fe₂O₃ surface. According to Mars–Van Krevelen mechanism, some Sb₂O₄ in catalysts could be intermediately reduced into Sb₂O₃ during reaction of isobutene oxidation, which thermal spreading is much easier. As shown by Raman results, the Sb₂O₄ that has been spread on Fe₂O₃ surface is probably amorphous.     

First-principles calculations of nitrogen-doped antimony triselenide: A prospective material for solar cells and infrared optoelectronic devices

This study is focused on calculation of the electronic structure and optical properties of non-metal doped Sb2Se3 using the first-principles method. One and two N atoms are introduced to Sb and Se sites in a Sb₂Se₃ crystal. When one and two N atoms are introduced into the Sb₂Se₃ lattice at Sb sites, the electronic structure shows that the doping significantly modifies the bandgap of Sb₂Se₃ from 1.11 eV to 0.787 and 0.685 eV, respectively. When N atoms are introduced to Se sites, the material shows a metallic behavior. The static dielectric constants ε1(0) for Sb₁₆Se₂₄, Sb₁₅N₁Se₂₄, Sb₁₄N₂Se₂₄, Sb₁₆Se₂₃N₁, and Sb₁₆Se₂₂N₂ are 14.84, 15.54, 15.02, 18.9, and 39.29, respectively. The calculated values of the refractive index n(0) for Sb₁₆Se₂₄, Sb₁₅N₁Se₂₄, Sb₁₄N₂Se₂₄, Sb₁₆Se₂₃N₁, and Sb₁₆Se₂₂N₂ are 3.83, 3.92, 3.86, 4.33, and 6.21, respectively. The optical absorbance and optical conductivity curves of the crystal for N-doping at Sb sites show a significant redshift towards the short-wave infrared spectral region as compared to N-doping at Se sites. The modulation of the static refractive index and static dielectric constant is mainly dependent on the doping level. The optical properties and bandgap narrowing effect suggest that the N-doped Sb₂Se₃is a promising new semiconductor and can be a replacement for GaSb due to its very similar bandgap and low cost.     

Structure determination, magnetic and optical properties of a new chromium(II) thioantimonate, [Cr((NH2CH2CH2)3N)]Sb4S7

The chromium(II) antimony(III) sulphide, [Cr((NH₂CH₂CH₂)₃N)]Sb₄S₇, was synthesised under solvothermal conditions from the reaction of Sb₂S₃, Cr and S dissolved in tris(2-aminoethyl)amine (tren) at 438 K. The products were characterised by single-crystal X-ray diffraction, elemental analysis, SQUID magnetometry and diffuse reflectance spectroscopy. The compound crystallises in the monoclinic space group P2₁/n with a=7.9756(7), b=10.5191(9), c=25.880(2) Å and β=90.864(5)°. Alternating SbS₃³⁻ trigonal pyramids and Sb₃S₆³⁻ semi-cubes generate Sb₄S₇²⁻ chains which are directly bonded to Cr(tren)²⁺ pendant units. The effective magnetic moment of 4.94(6)μ_B shows a negligible orbital contribution, in agreement with expectations for Cr(II):d⁴ in a ⁵A ground state. The measured band gap of 2.14(3) eV is consistent with a correlation between optical band gap and framework density that is established from analysis of a wide range of antimony sulphides.     

新型硒化锑材料及其光伏器件研究进展

硒化锑(Sb₂Se₃)是一种二元单相化合物, 原料储量大、毒性低、价格便宜; 同时其禁带宽度合适(～1.15 eV), 吸光系数大(>10⁵ cm^-1), 长晶温度低, 非常适合制作新型低成本低毒的薄膜太阳能电池, 理论光电转换效率可达30%以上. 目前文献报道的Sb₂Se₃薄膜太阳能电池效率已达3.7%, 初步证明了Sb₂Se₃材料在薄膜太阳能电池应用方面的巨大潜力. 本文综述了近年来Sb₂Se₃太阳能电池的研究进展, 着重介绍了Sb₂Se₃的材料特性和薄膜制备及相关理论研究, 阐述了不同结构电池器件的研究进展, 并对其发展趋势进行了展望.     

Enhanced luminescence from transparent Ni-doped MgO–Al2O3–SiO2 glass ceramics by Ga2O3 addition

Transparent Ni²⁺-doped MgO–Al₂O₃–SiO₂ glass ceramics without and with Ga₂O₃ were synthetized. The precipitation of spinel nanocrystals, which was identified as solid solutions in the glass ceramics, could be favored by Ga₂O₃ addition and their sizes were about 7.6 nm in diameter. The luminescent intensity of the Ni²⁺-doped glass ceramics was largely enhanced by Ga₂O₃ addition which could mainly be caused by increasing of Ni²⁺ in the octahedral sites and the reduction of the mean frequency of phonon density of states in the spinel nanocrystals of solid solutions. The full width at half maximum (FWHM) of emissions for the glass ceramics with different Ga₂O₃ content was all more than 200 nm. The emission lifetime increased with the Ga₂O₃ content and the longest lifetime is about 250 μs. The Ni²⁺-doped transparent glass ceramics with Ga₂O₃ addition have potential application as broadband optical amplifier and laser materials.     

A universal protocol for bidirectional controlled teleportation with network coding

We investigate bidirectional teleportation that works in a fair and efficient manner. Two explicit protocols are proposed to realize bidirectional teleportation with a controller. One is a symmetric protocol for two-qubit states. The other is an asymmetric protocol for single-and two-qubit states. We then devise a universal protocol for arbitrary n_1-and n_2-qubit states via a(2n_1+2n_2+1)-qubit entangled state, where n_1≤n_2.The receiver only needs to perform the single-qubit recovery operation, which is derived by a general expression. Moreover, a(2n_1+1)-bit classical communication cost can be saved within the controller's broadcast channel by the use of network coding technology.     

Structural evolution study of additions of Sb_2S_3 and CdS into GeS_2 chalcogenide glass by Raman spectroscopy

The structures of pseudo-binary GeS_2–Sb_2S_3, GeS_2–CdS, Sb_2S_3–CdS, and pseudo-ternary GeS_2–Sb_2S_3–CdS chalcogenide systems are systematically investigated by Raman spectroscopy. It is shown that a small number of [S_3Ge–GeS_3]structural units(SUs) and-S-S-/S8 groups exist simultaneously in GeS_2 glass which has a three-dimensional continuous network backbone consisting of cross-linked corner-sharing and edge-sharing [GeS_4] tetrahedra. When Sb_2S_3 is added into GeS_2 glass, the network backbone becomes interconnected [GeS_4] tetrahedra and [SbS_3] pyramids. Moreover, Ge atoms in[S_3Ge–GeS_3] SUs tend to capture S atoms from Sb_2S_3, leading to the formation of [S_2Sb–SbS_2] SUs. When CdS is added into GeS_2 glass, [Cd_4GeS_6] polyhedra are formed, resulting in a strong crystallization tendency. In addition, Ge atoms in[S_3Ge–GeS_3] SUs tend to capture S atoms from CdS, resulting in the dissolution of Ge–Ge bond. Co-melting of Sb_2S_3 or CdS with GeS_2 reduces the viscosity of the melt and improves the homogeneity of the glass. The GeS_2 glass can only dissolve up to 10-mol% CdS without crystallization. In comparison, GeS_2–Sb_2S_3 glasses can dissolve up to 20-mol% CdS,implying that Sb_2S_3 could delay the construction of [Cd_4GeS_6] polyhedron and increase the dissolving amount of CdS in the glass.     

Influence of N2:(N2 + Ar) flow ratio and substrate temperature on the properties of zirconium nitride films prepared by reactive dc magnetron sputtering

Preferred crystal orientation and low electrical resistivity are required for ZrN_x films applied in electronic devices. In this paper, effects of N₂:(N₂+Ar) flow ratio (F(N₂)) and substrate temperature on the properties of the films deposited on glass substrate by reactive dc sputtering are investigated. In a wide range of F(N₂) (4–24%), the films show fcc NaCl structure. While for F(N₂) in the ranges of 5–12, 12–24 and >24%, the films show (1 1 1)/(2 0 0), (1 1 1) only and amorphous structures, respectively. The electrical resistivity increases with F(N₂) from 5 to 24%, and can be controlled to some extent by changing the substrate temperature.     

Effects of substitution of Ti for Fe in BiFeO3 films prepared by sol–gel process

Ti substituted BiFe_1−xTi_xO_3+δ films have been prepared on indium–tin oxide (ITO)/glass substrates by the sol–gel process. The films with x=0.00–0.20 were prepared at an annealing temperature of 600 °C. X-ray diffraction patterns indicate that all films adopt R3m structure and the films with x=0 and 0.10 show pure perovskite phase. Cross-section scanning shows the thickness of the films is about 300 nm. Through 0.05 Ti substitution, the 2P_r increases to 8.30 μC/cm² from 2.12 μC/cm² of the un-substituted BiFeO₃ film and show enhanced ferroelectricity at room temperature. The 2P_r values are 2.63 and 0.44 μC/cm² for the films with x=0.01 and 0.2, respectively. Moreover, the films with x=0.05 and 0.10 show enhanced dielectric property since the permittivity increases near 150 at the same measuring frequency. Through the substitution of Ti, the leakage conduction is reduced for the films with x=0.05–0.20.     

A study of the thermal-induced nonlinearity of Au and Ag colloids prepared by the chemical reaction method

The nonlinear optical properties of metal Au and Ag colloidal solutions prepared by the chemical reaction method were investigated by a single beam Z-scan technique. Under CW 633 nm excitation, the Au and Ag colloidal solutions exhibited a large thermal-induced refractive index n₂. At the same time, the thermo-optic coefficients dn/dT of the Au and Ag colloidal solutions were obtained. The mechanism responsible for the process of nonlinear refraction was discussed in term of laser heating effect.     

Gas Cotton-Mouton constant measurement by extrapolation in dissolved binary liquid solutions

The magneto-optic Cotton-Mouton effect constant C, light refraction index n and density ρ of binary solutions of toluene in carbon tetrachloride, -picoline and β-picoline in 1,4-dioxane have been measured at different concentrations. The results have been used for the calculation of the molar C^M constants of the solutions. By extrapolating the values C^M = C^M(f₂) for the concentration f₂ → 0, the constant _∞C₂^M = _gasC₂^M of the dipolar component of the solution has been found, which is interpreted as the Cotton-Mouton gas constant. For all solutions, the reduction factors of the dissolved component have been calculated and their linear dependence on the solution concentration has been found.     

Measurement of nonlinear refraction of dyes doped liquid crystal using moiré deflectometry

Recently the nonlinear effects of the azo-dye doped liquid crystals have attracted much interest. In this paper the nonlinear refractive indices, n₂, of two dyes (Sudan Black B, Sudan III) doped nematic liquid crystal were measured at low laser powers using moiré deflectometry technique. The results show when a nonlinear sample is placed in moiré deflectometry setup, the moiré fringe patterns will rotate around the beam center because of self-focusing effect in the sample. By measuring this rotation, the magnitude and the sign of nonlinear refractive index were calculated. The n₂ values for Sudan black B is larger than Sudan III, because of some differences in molecular structure and molecular polarization.     

Synthesis and optical characterization of c-axis oriented GaN thin films on amorphous quartz glass via sol–gel process

c-Axis oriented GaN nanocrystalline thin films were fabricated by nitridation of three different thin films of -GaO(OH), -Ga₂O₃ or β-Ga₂O₃ obtained by sol–gel technique on amorphous quartz glass substrates. All these GaN thin films showed near band edge emission at 390 nm and yellow luminescence at 570 nm. The crystalline nature and c-axis orientation as well as luminescence properties of the GaN thin films increased by several times by using a buffer layer of GaN on the substrate.     

Ge-Se基硫系玻璃在通信波段的三阶非线性与光谱特性研究

在Ge-Se二元体系中引入相同摩尔比的Ga, Sn, Sb, Te四种元素, 使用熔融淬冷法制备了一系列硫系玻璃. 利用吸收光谱获得了不同元素引入下硫系玻璃能带结构的变化, 并结合拉曼光谱详细研究了产生光学特性变化的微观表征. 使用Z扫描方法测试了各个硫系玻璃样品在1550 nm波长下的三阶非线性参数, 发现加入Sn的玻璃的三阶非线性折射率n₂最大, 达到了6.36×10^-17 m²/W, 且其品质因子大于23, 表明Sn引入能够增强硫系玻璃在通信波段的三阶非线性, 这一研究结果为以后的高性能红外器件的设计及制备提供了一种环保且性能优良的候选材料.     

Projective and affine connections on S and integrable systems

It is known that the Korteweg–de Vries (KdV) equation is a geodesic flow of an L² metric on the Bott–Virasoro group. This can also be interpreted as a flow on the space of projective connections on S¹. The space of differential operators Δ⁽ⁿ⁾=∂ⁿ+u₂∂ⁿ⁻²++u_n form the space of extended or generalized projective connections. If a projective connection is factorizable Δ⁽ⁿ⁾=(∂−((n+1)/2−1)p₁)(∂+(n−1)/2p_n) with respect to quasi primary fields p_i’s, then these fields satisfy ∑_i=1ⁿ((n+1)/2−i)p_i=0. In this paper we discuss the factorization of projective connection in terms of affine connections. It is shown that the Burgers equation and derivative non-linear Schrödinger (DNLS) equation or the Kaup–Newell equation is the Euler–Arnold flow on the space of affine connections.