Thermal behaviour of precursors for CuInS2 thin films deposited by spray pyrolysis

The thermal decomposition of precursors for copper indium disulphide (CuInS₂) thin films obtained by drying aqueous solutions of copper chloride (CuCl₂), indium chloride (InCl₃) and thiourea (SC(NH₂)₂) at the Cu:In:S molar ratios of 1:1:3 (1) and 1:1:6 (2) was monitored by simultaneous thermogravimetry /differential thermal analysis/ evolved gas analysis-mass spectrometry (TG/DTA/EGA-MS) measurements in a dynamic 80 %Ar + 20 %O₂ atmosphere. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy were used to characterise the dried precursors and products of the thermal decomposition. The precursors 1 and 2 are mixtures of copper and indium chloride thiourea complex compounds, whilst 1 can also contain unreacted InCl₃. The thermal degradation of 1 and 2 in the temperature range of 30–800 °C consists of six steps with a total mass loss of 71.5 and 89.8 %, respectively. According to XRD, CuInS₂ is formed below 300 °C. Decomposition of 1 and 2 is completed at 620 and 600 °C, respectively. The final decomposition product of 1 at 800 °C consists of a mixture of In₂O₃ and CuO phases, whilst 2 consists of In₂O₃, CuO and Cu₂In₂O₅ phases. EGA by MS revealed the release of CS₂, NH₃, H₂NCN and HNCS, which upon their oxidation also yield COS, SO₂, HCN and CO₂.     

Deposition conditions,composition, and structure of chemically deposited In<Subscript>2</Subscript>Se<Subscript>3</Subscript> films

In₂Se₃ films up to 300 nm thick have been obtained for the first time by hydrochemical deposition on glass, glass ceramic, and molybdenum substrates in the In(NO₃)₃–C₄O₆H₆–CSeN₂H₄ system with the use of selenourea as a chalcogenizing agent. The phase and element composition and morphological features of layers obtained at 353 and 363 K have been studied by X-ray photoelectron spectroscopy, energy-dispersive electron probe X-ray microanalysis, and scanning electron microscopy. The optical band gap width has been determined.     

The 3Ga<Subscript>2</Subscript>S<Subscript>3</Subscript>-EuLaGa<Subscript>3</Subscript>S<Subscript>7</Subscript> system

The La₂S₃-Ga₂S₃-EuS system has been investigated along the 3Ga₂S₃-EuLaGa₃S₇ join by physicochemical methods (DTA, X-ray powder diffraction, microstructural analysis). is a quasi-binary eutectic-type section of the ternary system. Solubility on the base of both components has been revealed in the system. Solubility at room temperature is 3 mol % EuLaGa₃S₇ on the Ga₂S₃ side 1.5 mol % Ga₂S₃ and on the base of the EuLaGa₃S₇ compound. The coordinates of the eutectic point are 80 mol% EuLaGa₃S₇ and 1020 K.     

Phase equilibria in the La<Subscript>2</Subscript>S<Subscript>3</Subscript>-Bi<Subscript>2</Subscript>S<Subscript>3</Subscript>-La<Subscript>2</Subscript>O<Subscript>3</Subscript> ternary system

Phase equilibria in the La₂S₃-Bi₂S₃-La₂O₃ ternary system were studied by differential thermal, X-ray powder diffraction, and microstructure analyses. Phase diagrams of five vertical sections and a liquidus surface projection were plotted for the La₂S₃-Bi₂S₃-La₂O₃ system. The regions of primary crystallization of phases and coordinates of non- and monovariant equilibria were determined for the system.     

Sensors based on SnO<Subscript>2</Subscript> + In<Subscript>2</Subscript>O<Subscript>3</Subscript> composite films for detecting CO in air

The sensor properties of nanostructured films of SnO₂, In₂O₃, and their combinations for detecting CO in air in the temperature range of 330–520°C were investigated. It was found that SnO₂ films show the least sensitivity to CO. Sensitivity grows as the concentration of In₂O₃ in SnO₂ increases, and it reaches its maximum value in pure In₂O₃. At the same time, the maximum of sensitivity to CO in air shifts towards low temperatures. Sensor response time was found to be about 1 s for the studied SnO₂ and In₂O₃ films, and about 0.5 s for the composite film. The mechanism of sensor sensitivity for the studied metal oxide films in detecting CO in air is discussed.     

MnS-Pr<Subscript>2</Subscript>S<Subscript>3</Subscript> phase diagram

The MnS-Pr₂S₃ phase diagram is of the eutectic type with incomplete solubility based on the starting sulfides (MnS and Pr₂S₃). The extent of the MnS-based solid solution at 1470 K is 1 mol % Pr₂S₃. γ-Pr₂S₃ at 1470 K dissolves 23 mol % MnS, α-Pr₂S₃ at 1170 K dissolves 6 mol % MnS. The eutectic composition (30 mol % Pr₂S₃ at 1550 K) coincides with the value calculated from the Schroeder equation for the liquidus branch descending from MnS. A value of 64 kJ/mol was calculated for the heat of melting of Pr₂S₃ using the Schroeder equation.     

UV assisted pyrolysis of solution deposited BiFeO<Subscript>3</Subscript> multiferroic thin films. Effects on microstructure and functional properties

BiFeO₃ thin films were processed on platinized silicon substrate via chemical solution deposition. Short wave UV assisted pyrolysis was conducted in oxygen atmosphere in order to obtain a fine and homogeneous grain structure. Phase pure thin films with a pronounced (100) texture were obtained at a fairly low annealing temperature of 600°C. For comparison specimens processed without UV assisted pyrolysis were also investigated. It is shown that UV assisted pyrolysis leads to a substantial improvement of leakage resistance properties. Polarization switching could also be obtained using capacitance-voltage (C-V) curves. The leakage current was investigated as a function of temperature. Interpretation in terms of Frenkel-Poole mechanism leads to a high trap depth in the range of 2.4 eV which is attributed to the creation of Fe²⁺ centres. For both microstructures investigated well saturated magnetization loops were obtained with a remnant magnetization of 2Mr = 5.4 emu/cm³ and a coercive fields in the range of 2Hc = 200 Oe. Slightly higher saturation magnetization 2Ms of 55.4 emu/cm³ was obtained for UV assisted pyrolysis in comparison to 45.8 emu/cm³ for the thin films processed without UV.     

Sm<Subscript>2</Subscript>S<Subscript>3</Subscript>-Sm<Subscript>2</Subscript>O<Subscript>3</Subscript> phase diagram

The Sm₂S₃-Sm₂O₃ phase diagram was studied by physicochemical methods of analysis from 800 K up to melting. Two oxysulfides are formed in the system: Sm₁₀S₁₄O with tetragonal crystal structure (space group I41/acd; unit cell parameters: a = 1.4860 nm, c = 1.9740 nm; microhardness: H = 4700 MPa; solid decomposition temperature: 1500 K) and Sm₂O₂S with hexagonal structure (space group P-3m1; a = 0.3893 nm, c = 0.6717 nm; H = 4500 MPa; congruent melting temperature: 2370 K). Within the extent of the Sm₂O₂S-based solid solution (61–70 mol % Sm₂O₃) at 1070 K, a singular point appears at the compound composition on property-composition curves. The eutectic coordinates: 23 mol % Sm₂O₃ and 1850 K; 80 mol % Sm₂O₃ and 2290 K.     

Mechanical and optical properties of SiO<Subscript>2</Subscript> thin films deposited on glass

The optical and mechanical properties of amorphous SiO₂ films deposited on soda-lime silicate float glass by reactive RF magnetron sputtering at room temperature were investigated in dependence of the process pressure. The densities of the films are strongly influenced by the process pressure and vary between 2.38 and 1.91 g cm^?3 as the pressure changes from 0.27 to 1.33 Pa. The refractive indices of the films shift between 1.52 and 1.37, while the residual compressive stresses in the deposited films vary in the range from 440 to 1 MPa. Hardness and reduced elastic modulus values follow the same trend and decline with the increase of process pressure from 8.5 to 2.2 GPa and from 73.7 to 30.9 GPa, respectively. The abrasive wear resistance decreases with the density of the films.     

Amperometric CO<Subscript>2</Subscript> gas sensor based on interconnected web-like nanoparticles of La<Subscript>2</Subscript>O<Subscript>3</Subscript> synthesized by ultrasonic spray pyrolysis

Thin films of La₂O₃ were deposited onto glass substrates by ultrasonic spray pyrolysis. Their structural and morphological properties were characterized by X-ray diffraction, Fourier transform Raman spectroscopy, scanning electron microscopy, transmission electron microscopy, X-ray photo-electron spectroscopy, Brunauer-Emmett-Teller and optical absorption techniques. The sensor displays superior CO₂ gas sensing performance at a low operating temperature of 498 K. The signal change on exposure to 300 ppm of CO₂ is about 75%, and the signal only drops to 91% after 30 days of operation.

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Graphical abstract Schematic diagram of the CO₂ gas sensing mechanism of an interconnected web-like La₂O₃ nanostructure in presence of 300 ppm of CO₂ gas and at an operating temperature of 498 K.

     

Phase diagrams of the systems Sc<Subscript>2</Subscript>S<Subscript>3</Subscript>-Ln<Subscript>2</Subscript>S<Subscript>3</Subscript> for Ln = La,Nd, or Gd

Phase diagrams have been designed for the systems Sc₂S₃-Ln₂S₃ where Ln = La, Nd, or Gd. In these systems, complex sulfides crystallize in orthorhombic space group Pnma. The sulfides melt congruently and have the following parameters; for LaScS₃, a = 0.718 nm, b = 0.654 nm, c = 0.960 nm, 2000 K, 3200 MPa; for NdScS₃, a = 0.712 nm, b = 0.646 nm, c = 0.952 nm, 1960 K, 3500 MPa; and for GdScS₃, a = 0.704 nm, b = 0.640 nm, c = 0.946 nm, 1900 K, 3400 MPa. The extents of the solid solutions based on the existing phases increase as the effective ion radii of Ln³⁺ approaches that of Sc³⁺. At 1670 K, the LnScS₃ homogeneity region is 48–52 mol % Nd₂S₃ and 46–54 mol % Gd₂S₃. Sc₂S₃ dissolves 3 mol % Nd₂S₃ and 6 mol % Gd₂S₃. γ-Nd₂S₃ dissolves 2 mol % Sc₂S₃, and γ-Gd₂S₃ dissolves 4 mol % Sc₂S₃. The subsystems Sc₂S₃-LnScS₃ and LnScS₃-Ln₂S₃ are of the eutectic type. The eutectic coordinates are, respectively, 27 mol % La₂S₃, 1880 K; 75 mol % La₂S₃, 1800 K; 30 mol % Nd₂S₃, 1850 K; 74 mol % Nd₂S₃, 1770 K; 33 mol % Gd₂S₃, 1800 K; and 74 mol % Gd₂S₃, 1730 K.     

Chemisorption of SO<Subscript>2</Subscript> on the Zn-modified In<Subscript>2</Subscript>O<Subscript>3</Subscript> surface

Chemisorption of SO₂ and O₂ on the In₂O₃ surface containing a zinc additive (0.4–2.7 at.%) was studied in a temperature range of 22–200 °C. At least three forms of sorbed SO₂ exist on the modified In₂O₃ surface. The temperature affects the contribution of single forms of SO₂ sorption and, hence, the change in the electric conductivity. The preliminary sorption of O₂ favors the formation of a donor form of chemisorbed SO₂. Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 10, pp. 2228–2232, October, 2005.     

Synthesis of complex sulfide phases BaSm<Subscript>2</Subscript>S<Subscript>4</Subscript>-Tm<Subscript>2</Subscript>S<Subscript>3</Subscript> and studies of their electrolytic properties

The possibility of synthesizing complex sulfide phases in the BaSm₂S₄-Tm₂S₃ system has been studied. Tm₂S₃ solid solutions were obtained with BaSm₂S₄ (CaFe₂O₄ structural type). The samples were identified by X-ray diffraction analysis and electron microscopy. The range of the solid solutions was determined. The total conductance was studied, and the conductance activation energy was calculated for samples with different dopant contents. The electrolytic properties of basic ternary sulfide and complex sulfide phases in the BaSm₂S₄-x mol % Tm₂S₃ system were investigated. A possible mechanism of defect formation was proposed.     

Interaction of Cl<Subscript>2</Subscript> and SO<Subscript>2</Subscript> with Finely Divided In<Subscript>2</Subscript>O<Subscript>3</Subscript>

The effect of O₂, Cl₂, and SO₂ on electrophysical and sorption properties of powdered In₂O₃ with a large specific area is studied at 23–200°C. The specimen is most sensitive to Cl₂ and SO₂ at near-room temperatures.__________Translated from Elektrokhimiya, Vol. 41, No. 5, 2005, pp. 529–536.Original Russian Text Copyright © 2005 by Vinokurova, Derlyukova.     

Synthesis,structure, and electric properties of oxygen-deficient perovskites Ba<Subscript>3</Subscript>In<Subscript>2</Subscript>ZrO<Subscript>8</Subscript> and Ba<Subscript>4</Subscript>In<Subscript>2</Subscript>Zr<Subscript>2</Subscript>O<Subscript>11</Subscript>

Perovskite phases Ba₃In₂ZrO₈ and Ba₄In₂Zr₂O₁₁ with the nominal concentration of structural oxygen vacancies 1/9 and 1/12, respectively, were synthesized by solid-phase and solution methods. X-ray diffraction showed cubic symmetry of both phases with the unit cell parameter a = 0.4193(2) and 0.4204(3) nm, respectively. The absence of superstructural lines resulted in the conclusion on statistical arrangement of oxygen vacancies. Thermogravimetry and mass spectrometry proved that both phases can reversibly absorb water from gas phase (pH₂O = 2 × 10⁻² atm) with observed correlation between the concentration of oxygen vacancies and amount of absorbed water. The total water amount was up to 0.9 mol per formula unit or, if recalculated for perovskite unit ABO₃, 0.3 and 0.23 mol H₂O, respectively. The temperature curves of coductivity in the atmosphere with various partial water vapor pressures (pH₂O = 3 × 10⁻⁵ and 2 × 10⁻² atm) showed significantly higher conductivity and lower activation energy (0.52 eV) in humid atmosphere due to proton transfer. The proton conductivity is up to 5 × 10⁻⁴ Ohm⁻¹ cm⁻¹ at 300°C for Ba₃In₂ZrO₈ specimen. IR spectrometry showed that protons in the structure exist primarily in OH-groups.     

Phase equilibria in the BaS-Cu<Subscript>2</Subscript>S-Gd<Subscript>2</Subscript>S<Subscript>3</Subscript> system

Phase equilibria in the BaS-Cu₂S-Gd₂S₃ system have been studied along the 800 K isothermal section and the CuGdS₂-BaS, Cu₂S-BaGdCuS₃, BaGdCuS₃-Gd₂S₃, and BaGdCuS₃-BaGd₂S₄ polythermal sections. Complex sulfide BaGdCuS₃ is formed in the title system; it has an orthorhombic KZrCuSe₃-type structure (space group Cmcm) with the unit cell parameters equal to a = 0.40529(2) nm, b = 1.34831(6) nm, c = 1.02940(5) nm. This sulfide melts congruently at 1685 K. BaGdCuS₃ is in equilibrium with sulfides Cu₂S, BaS, Gd₂S₃, CuGdS₂, BaGd₂S₄, BaCu₄S₃, and BaCu₂S₂ and with compositions in the C₀ solid-solution region of the Cu₂S-Gd₂S₃ system. Eutectics are formed between compounds CuGdS₂ and BaGdCuS₃ at 7.0 mol % BaS and T = 1325 K, between BaGdCuS₃ and BaS at 64.0 mol % BaS and T = 1625 K, between Cu₂S and BaGdCuS₃ at 8.0 mol % BaGdCuS₃ and T = 1125 K, between Gd₂S₃ and BaGdCuS₃ at 64.0 mol % Gd₂S₃ and 1495 K, and between BaGdCuS₃ and BaGd₂S₄ at 35 mol % BaGd₂S₄ and T = 1660 K.