Thermoelectric-transport in metal/graphene/metal hetero-structure

We investigate the thermoelectric-transport properties of metal/graphene/metal hetero-structure. We use a single band tight-binding model to present the two-dimensional electronic band structure of graphene. Using the Landauer--Butticker formula and taking the coupling between graphene and the two electrodes into account, we can calculate the thermoelectric potential and current versus temperature. It is found that in spite of metal electrodes, the carrier type of graphene determines the electron motion direction driven by the difference in temperature between the two electrodes, while for n type graphene, the electrons move along the thermal gradient, and for p type graphene, the electrons move against the thermal gradient.     

Electronic properties of single-molecule junction: Effect of the molecular distortion

For a model system consisting of a benzenedithio (BDT) molecule sandwiched between two Au plates, the electronic properties as a function of different BDT geometry are investigated using density functional theory. The distorted BDT structures are got through stretching the electrode distance. The corresponding electronic properties, including the spatial distribution of the frontier orbits, the gap between the highest occupied molecular orbital and the lowest unoccupied molecular orbital levels and density of states at the Fermi energy are determined. It reveals that the molecular distortion essentially determines electronic structures. The result should be beneficial to understand the stress-dependent or structure-dependent transport mechanism of electrons of the BDT junction.     

Strain-tunable electronic and optical properties of h-BN/BC_3 heterostructure with enhanced electron mobility

By using first-principles calculation, we study the properties of h-BN/BC_3 heterostructure and the effects of external electric fields and strains on its electronic and optical properties. It is found that the semiconducting h-BN/BC_3 has good dynamical stability and ultrahigh stiffness, enhanced electron mobility, and well-preserved electronic band structure as the BC_3 monolayer. Meanwhile, its electronic band structure is slightly modified by an external electric field. In contrast,applying an external strain can mildly modulate the electronic band structure of h-BN/BC_3 and the optical property exhibits an apparent redshift under a compressive strain relative to the pristine one. These findings show that the h-BN/BC_3 hybrid can be designed as optoelectronic device with moderately strain-tunable electronic and optical properties.     

Ab-initio investigations of the electronic properties of bulk wurtzite Beryllia and its derived nanofilms

In this Letter we investigate the electronic properties of the bulk and the nanofilm BeO in wurtzite structure. We performed a first-principles pseudo-potential method within the generalized gradient approximation. We will give more importance to the changes in band structure and density of states between the bulk structure and its derived nanofilms. The bonding characterization will be investigated via the analysis Mulliken population and charge density contours. It is found that the nanofilm retains the same properties as its bulk structure with slight changes in electronic properties and band structure which may offer some unusual transport properties.     

Anomalous Optical and Electronic Properties of CaTiO3 Perovskites

With the help of the first-principles full potential linearized augmented plane wave method, absorption coefficients, reflectivity, dielectric behavior and electronic properties, including electronic energy bands, density of states and charge density distributions, are studied for the tetragonal and cubic CaTiO3. By considering the thermal expansion effects, an approximate method is proposed for the study of the stability of ground state and a tendency of phase transition, based on the minimum free energy principle. Subsequently, numerical calculations are carried out by using the first-principles perturbation method. We demonstrate that the high-temperature phase is cubic. It is shown that optical spectra in tetragonal phase exhibit single-peak feature and differ from multi-peak character in cubic. We find that strong orbital hybridization results in the co-valent bonds between Ti 3d and O 2p electrons and forms two-type dipoles (Ti-O1 and Ti-O2) in tetragonal, while the Ti-O dipoles are identical in cubic. It is argued that crystal structure determines the dipole distributions and leads to some electron states among which the dipole-dipole transition forbidden is a key, causing such anomalous optical phenomena with the insulator characteristics. The predicted charge density distribution and the tendency of phase transition from tetragonal to cubic are in good agreement with experimental observations.     

Electronic properties of Li-doped zigzag graphene nanoribbons

Zigzag graphene nanoribbons (ZGNRs) are known to exhibit metallic behavior. Depending on structural properties such as edge status, doping and width of nanoribbons, the electronic properties of these structures may vary. In this study, changes in electronic properties of crystal by doping Lithium (Li) atom to ZGNR structure are analyzed. In spin polarized calculations are made using Density Functional Theory (DFT) with generalized gradient approximation (GGA) as exchange correlation. As a result of calculations, it has been determined that Li atom affects electronic properties of ZGNR structure significantly. It is observed that ZGNR structure exhibiting metallic behavior in pure state shows half-metal and semiconductor behavior with Li atom.     

Engineering the electronic structure of graphene superlattices via Fermi velocity modulation

Graphene superlattices have attracted much research interest in the last years, since it is possible to manipulate the electronic properties of graphene in these structures. It has been verified that extra Dirac points appear in the electronic structure of the system. The electronic structure in the vicinity of these points has been studied for a gapless and gapped graphene superlattice and for a graphene superlattice with a spatially modulated energy gap. In each case a different behavior was obtained. In this work we show that via Fermi velocity engineering it is possible to tune the electronic properties of a graphene superlattice to match all the previous cases studied. We also obtained new features of the system never observed before, reveling that the electronic structure of graphene is very sensitive to the modulation of the Fermi velocity. The results obtained here are relevant for the development of novel graphene-based electronic devices.     

Anomalous Optical and Electronic Properties of CaTiO3 Perovskites

With the help of the first-prlnciples full potential linearized augmented plane wave method, absorption coefficients, reflect/vity, dielectric behavior and electronic properties, including electronic energy bands, density of states and charge density distributions, are studied for the tetragonal and cubic CaTiO3. By considering the thermal expansion effects, an approximate method is proposed for the study of the stability of ground state and a tendency of phase transition, based on the minimum free energy principle. Subsequently, numerical calculations are carried out by using the first-principles perturbation method. We demonstrate that the high-temperature phase is cubic. It is shown that optical spectra in tetragonal phase exhibit single-peak feature and differ from multi-peak character in cubic. We find that strong orbital hybridization results in the co-valent bonds between Ti 3d and O 2p electrons and forms two-type dipoles （Ti-Ol and Ti-02） in tetragonal, while the Ti-O dipoles are identical in cubic. It is argued that crystal structure determines the dipole distributions and leads to some electron states among which the dipole-dipole transit/on forbidden is a key, causing such anomalous optical phenomena with the insulator characteristics. The predicted charge density distribution and the tendency of phase transition from tetragonal to cubic are in good agreement with experimental observations.     

Zigzag型石墨纳米带电子结构和输运性质的第一性原理研究

采用第一性原理电子结构和输运性质计算研究了zigzag型单层石墨纳米带(具有armchair 边缘)的电子结构和输运性质及其边缘空位缺陷效应. 研究发现,完整边缘的zigzag型石墨纳米带是具有一定能隙的半导体带,边缘空位缺陷的存在使得纳米带能隙变小,且缺陷浓度越大,能隙越小,并发生了半导体-金属转变. 利用这些研究结果,将有助于在能带工程中实现其电子结构裁剪. 关键词： 石墨纳米带 空位缺陷 电子结构 输运性质     

Zigzag型石墨纳米带电子结构和输运性质的第一性原理研究

采用第一性原理电子结构和输运性质计算研究了zigzag型单层石墨纳米带(具有armchair 边缘)的电子结构和输运性质及其边缘空位缺陷效应. 研究发现，完整边缘的zigzag型石墨纳米带是具有一定能隙的半导体带，边缘空位缺陷的存在使得纳米带能隙变小，且缺陷浓度越大，能隙越小，并发生了半导体-金属转变. 利用这些研究结果，将有助于在能带工程中实现其电子结构裁剪.     

A comparative study of electronic structure and magnetic properties of SrCrO3 and SrMoO3

A comparative study of electronic structure and magnetic properties of SrCrO₃ and SrMoO₃ has been carried out using FPLAPW method with density-functional theory. The calculated results suggest that both compounds are nonmagnetic (NM) metal in cubic structures at room temperature, and they exhibit very similar band structure and electronic properties except more extend Mo 4d orbitals than Cr 3d electronic states. However, the electronic structure and magnetic properties exhibit remarkable differences between them in the low temperature phases. SrCrO₃ is with a C-AFM ground state with magnetic moment of 1.18μ_B/Cr in the tetragonal structure, while SrMoO₃ is with a NM ground state in the orthorhombic structure. It is assumed that the extend 4d orbitals may be the reason which results in NM solution at low temperature phase of SrMoO₃.     

The charge neutrality level and the fermi level pinning in A<Superscript>3</Superscript>N (BN,AlN, GaN,InN) nitrides

The electronic band structure and position of the charge neutrality level (CNL) in BN, AlN, GaN, and InN compounds with cubic and hexagonal lattices are calculated within the density functional theory (DFT-GGA). It is shown that the charge neutrality level is shifted from the middle of the BN and AlN forbidden band to the upper half of the GaN forbidden band and to the allowed energy region in the InN conduction band as the cation atomic weight increases. This determines semiinsulating properties of BN and AlN, n-type conductivity of GaN, and n ⁺-type conductivity of InN upon saturation of these materials by intrinsic lattice defects due to hard radiation. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 24–31, December, 2008.     

Amorphous carbon

The properties of various types of amorphous carbon and hydrogenated amorphous carbon are reviewed with particular emphasis on the effect of atomic structure on the electronic structure. It is shown how the proportion of sp³ and sp² sites not only defines the short-range order but also a substantial medium-range order. Medium-range order is particularly important in amorphous carbon because it is the source of its optical gap, whereas short-range order is usually sufficient to guarantee a gap in other amorphous semiconductors. The review discusses the following properties: short-range order and the radial distribution function, the infrared and Raman spectra, mechanical strength, the electronic structure, photoemission spectra, optical properties, electron energy-loss spectra, core-level excitation spectra, electrical conductivity, electronic defects and the electronic doping of hydrogenated amorphous carbon.     

Funnel-type etched ion tracks in polymers

It is shown that conical track etching is a much more complicated process than generally assumed. The choice of the corresponding parameters (i.e. the ratios of concentrations and diffusion coefficients of both etchant (e.g. NaOH) and stopping solutions (e.g. HCl) and the etching temperature) determines the ratio of polymer dissolution to etchant penetration. The latter value controls the counterplay of diffusion, etching, ionic conductivity, field emission and capacitive effects, which is decisive for both the final track shapes and their electronic properties. The stages of track evolution during etching under different conditions are outlined in detail. Both transparent conical nanopores and “funnel-type” tracks can be obtained, the latter consisting of a shorter cone and a residual latent track. Depending on the internal structure of that latent track segment, such funnel-type tracks either allow smooth transmission of the rectified currents or they emit unipolar current spikes. Not only the study of electronic properties of single ion tracks, but also of a multitude of tracks makes sense. Depending on the applied parameters, the individual track properties may either just add up, or new effects may be found that emerge from the interaction of the tracks among each other. This is preferentially the case for spike-emitting tracks, where effects such as phase-locked spike synchronization can be found as described by neural network theory.     

双空位缺陷石墨纳米带的电子结构和输运性质研究

基于第一原理电子结构和输运性质计算,研究了585双空位拓扑缺陷对锯齿（zigzag）型石墨纳米带（具有椅型（armchair）边）电子结构和输运性质的影响.研究发现,585双空位缺陷的存在使得锯齿型石墨纳米带的能隙增大,并在能隙中出现了一条局域于缺陷处的缺陷态能带,双空位缺陷的取向也影响其能带结构.另外,585双空位缺陷对能隙较小的锯齿型石墨纳米带输运性质的影响较大,而对能隙较大的锯齿型石墨纳米带影响很小,缺陷取向并不显著影响纳米带的输运性质. 关键词： 石墨纳米带 585空位缺陷 电子结构 输运性质     

Electronic structure and magnetic properties of Co- and Mn-based Heusler alloys and thin films

The full-potential linearized augmented-plane-wave method is used to investigate the electronic structure of several Co- and Mn-based ferromagnetic Heusler alloys. It is shown that calculated lattice constants and spin magnetic moments are in good agreement with experimental values. Electronic structure of Ni₂MnGa(001) surface as well as Ni₂MnGa thin film on GaAs(001) substrate is also investigated. The changes of electronic structure and magnetic properties at surface are analyzed.     

Theoretical investigation of electronic and optical properties of andalusite within density functional theory

The electronic and optical properties of andalusite were studied by using quantum-mechanical calculations based on the density functional theory (DFT). The electronic structure shows that andalusite has a direct band gap of 5.01 eV. The complex dielectric function and optical constants, such as extinction coefficient, refractive index, reflectivity and energy-loss spectrum, are calculated. The optical properties of andalusite are discussed based on the band structure calculations. It is shown that the O-2p states and Al-3s states play a major role in optical transitions as initial and final states, respectively.     

On the electronic structure of Krogmann salts

It is shown that many of the properties of KCP above any Peierls' transition may be predicted from a non-empirical localized orbital calculation of the electronic structure.     

富勒稀C36的电子结构与电子传导

本文采用基于第一性原理的密度泛函理论和非平衡格林函数方法研究了C36分子的电子结构和电子传导特性．本文以Au(1,1,1)为电极分别建立了4个电子输运模型,分别计算了他们的电子传输概率、伏安曲线,同时分析了产生这些分子器件电子输运性质的原因．研究计算结果发现, C36的电子输运主要发生在分子壳上,当左、右电极分别连接在第6号和第35号碳原子两端时,C36的电子输运性能最好,伏安曲线显示该分子具有半导体特性．     

Tuning dimensionality by nanowire adsorption on layered materials

The dimensionality of electronic states determines a number of physical phenomena such as phase transitions, transport, or superconductivity. Employing scanning tunneling microscopy combined with angle-resolved photoemission spectroscopy we demonstrate how the dimensionality of electronic states can be continuously tuned from three to two dimensions. This is achieved by adsorption of nanowires on surfaces of layered crystals without changing the chemical composition of the material. Exemplary results for Rb nanowires on TiTe2 are discussed with the help of electronic structure calculations.