Stability of Thin-Film Cu–As2S3 and Ag–As2S3 Structures

Technical Physics - Thin-film Cu–As2S3 and Ag–As2S3 structures obtained by successively evaporating Cu(Ag) and As2S3 in vacuum on glass substrates have been studied. Samples of these...     

Assignment of Isodoublet of 2^3S1 Meson Nonet

Inserting the masses of some states, which have been established in theexperiments or the theory of lattice QCD, we investigate the mass of theisodoublet of the 2³S₁ meson nonet. The agreement results, 1567±22.6MeV and 1576.8MeV, are given by two different approaches. We suggest that the assignment of 2³S₁ meson nonet should be re-examined in future experiments.     

Super-linear frequency dependence of ac conductivity of disordered Ag2S–Sb2S3 at cryogenic temperatures

The ac conductivity of a new class of disordered solids, i.e. mechanochemically synthesized amorphous fast ion conducting Ag₂S–Sb₂S₃ materials, has been investigated in the audio frequency range (10–10⁷?Hz) down to cryogenic temperatures (～10?K). The conductivity spectra exhibit the usual signature of a disordered system at higher temperatures, well described by the Jonscher power law (JPL) i.e., σ′(ω)?=?σ _dc?+?A(T)ω*, although the frequency exponent (n?<?1) is found to be a weak function of temperature. However, as the temperature is lowered, the frequency width of the σ _dc region decreases gradually and that of the JPL region increases. Eventually, the σ _dc region disappears and the JPL region alone dominates the spectrum. However, at the lowest temperatures, both the σ _dc and JPL regions disappear and σ′(ω) obeys a super-linear power law (SPL) (σ′?∝?ω^m , m?≥?1). It is observed that the SPL has strikingly similar characteristics to the well-established nearly-constant-loss (NCL) behaviour corresponding to m?=?1. Both SPL and NCL appear in the same time–temperature (low-temperature/low-frequency) domain. Furthermore, in both cases the conductivity is a distinctly weak function of temperature but quite sensitive to frequency, and the SPL/NCL?→?JPL crossover frequency is thermally activated with almost the same energy as the ac activation energy. The presence of the SPL is further manifested in the form of a well-defined minimum in the dielectric loss, ε″(ω), spectra. It is therefore proposed that the entire low-temperature/low-frequency spectra can be described by a modified Jonscher power law, σ′(ω)?=?σ _dc(T)?+?A(T) ωⁿ ?+?B(T)ω^m , m?=?1 (NCL), m?>?1 (SPL), where the second term with n?<?1 accounts for the JPL and the third term with m?≥?1 accounts for SPL/NCL. The results and some other low-temperature/low-frequency conductivity data are consistent with an asymmetric double well potential (ADWP) model.     

Controlled crystallization of β-In2S3 in 65GeS2⋅25In2S3⋅10CsCl chalcohalide glass

65GeS₂?25In₂S₃?10CsCl chalcohalide glass-ceramics containing β-In₂S₃ crystallites in the glassy matrix were prepared by traditional melt-quenching and subsequent heat-treatment at a fairly low temperature (T _g +10 ^°C) for different durations. The transmission spectra show that the cut-off edge of short wavelength is red-shifted with the prolongation of annealing time, but remains an excellent transmittance in the mid-IR region. Meanwhile, its crystallization behavior was investigated systematically. The results show that the precipitation of β-In₂S₃ crystal phase is responsible for the first crystallization peak, and the second crystal phase is GeS₂, which precipitated in the interior after a heat treatment at a high temperature (T _g +70 ^°C). Furthermore, the crystallization mechanism was investigated using the non-isothermal method. The crystallization rate constant K value of 6.08×10^?4 s^?1 at 346 ^°C for the β-In₂S₃ phase is about three times larger than that of the GeS₂ phase, indicating a much easier crystallization mechanism of β-In₂S₃ phase. Therefore, it is easy to control the precipitation of sole β-In₂S₃ crystallite, and to avoid interference of the second crystal phase GeS₂.     

α-In2S3 and β-In2S3 phases produced by SILAR technique

In₂S₃ films have been deposited by the successive ionic adsorption and reaction technique (SILAR) at room temperature. The films have been examined to evaluate the structural and optical properties. X-ray diffraction spectra have revealed the presence of both the α-In₂S₃ (cubic) and β-In₂S₃ (tetragonal) phases. The presence of the α-In₂S₃ phase at room temperature is attributed to the richness of In in the deposited materials. The presence of both phases is also supported by FESEM observations. The crystallinity of the material has been observed to improve with increasing thickness. Direct band gap of the deposits decreased from 2.89 to 2.37?eV with increasing thickness.     

Identification of the 3s 2 3p 2 3 P 1,2 — 3s3p 3 5 S 2 0 intercombination transition in siliconlike Ni14+

The³P1, 2^{? 5}S ₂ ^o intercombination lines in Ni¹⁴⁺ have been identified in the EUV spectrum emitted by foil-excited Ni ion beams. The wavelengths are close to the theoretically predicted values. The relative intensities of the lines confirm the predicted branching ratios. In a most recent paper Ellis and Martinson [1] give predicted wavelengths and transition rates for the 3s²3p^{2 3}P_1,2 — 3s3p^{3 5}S ₂ ^o , intercombination transition in siliconlike ions with 16≤Z≤28. The data were obtained theoretically (and compared with other theoretical data by Huang [2]) but adjusted to match the known wavelengths of this transition in the first three ions of the sequence and the finestructure intervals of the³P state which are known for a few more ionization stages.     

IR impurity absorption in Sb2S3–GeS2(Ge2S3) chalcogenide glasses

The IR optical transmission spectra in the 4000–1000 cm⁻¹ (2.5–10 μm) region in the chalcogenide glasses (ChG) of the ternary Ge–Sb–S system of stoichiometric Sb₂S₃–GeS₂ and non-stoichiometric Sb₂S₃–Ge₂S₃ compositions are studied. The compositional dependences of the measured IR spectra connected with influence of O-, H- and C-based absorbed impurites are analyzed.     

The molecular structure and the analytical potential energy function of S2^- and S3^-

In this paper, the equilibrium geometry, harmonic frequency and dissociation energy of S2^- and S3^- have been calculated at QCISD/6-311＋＋G（3d2f） and B3P86/6-311＋＋G（3d2f） level. The S2^- ground state is of 2IIg, the S3^- ground state is of 2B1 and S3^- has a bent （C2v） structure with an angle of 115.65° The results are in good agreement with these reported in other literature. For S3^- ion, the vibration frequencies and the force constants have also been calculated. Base on the general principles of microscopic reversibility, the dissociation limits has been deduced. The Murrell-Sorbie potential energy function for S2^- has been derived according to the ab initio data through the least- squares fitting. The force constants and spectroscopic data for S2^- have been calculated, then compared with other theoretical data. The analytical potential energy function of S3^- have been obtained based on the many-body expansion theory. The structure and energy can correctly reappear on the potential surface.     

Electron paramagnetic resonance study of S− and S− 3

Abstract

Two new sulphur are reported in monocristalline rubidiumchloride doped with rubidium and sulphur, and irradiated with X-rays at room temperature. By an extensive comparison with other experimental data on chalcogen centres in alkali halides an interstitial RbCl:S^? and a substitutional RbCl:S^? ₃ model is proposed for these paramagnetic defects. Theoretical calculations confirm the S^? ion model for the former.     

Phase Transition in Ag2S and the Relative Position of Atomic Planes of the α-Ag2S and β-Ag2S Phases

JETP Letters - The relative position of atomic planes of low-temperature monoclinic acanthite α-Ag2S and high-temperature bcc argentite β-Ag2S has been determined from X-ray and electron...     

Ultrafast non-resonant third-order optical nonlinearity of GeS2–Ga2S3–CdS chalcogenide glass

Ultrafast third-order nonlinear optical responses of 4(1?x)/5GeS₂-(1?x)/5Ga₂S₃-xCdS (x=0.05, 0.10 and 0.15 in mol%) chalcogenide glasses was investigated by using the femtosecond time-resolved optical Kerr effect technique at a wavelength of 800 nm. The largest third-order nonlinear susceptibility of all samples was estimated to be 1.65×10^?13 esu. An ultrafast nonlinear response time of about 250 fs was observed, which was dominantly assigned to the ultrafast distortion of the electron cloud under femtosecond laser excitation. A nonlinear relationship between the third-order nonlinear susceptibility and the introduced amount of CdS was discussed, suggesting a possible disturbance between different polarizable bonds in the glass system.     

Raman spectra of single crystals of α-P4S3

Polarization data for the Raman-active k = 0 phonons of single crystals of α-P₄S₃ have been measured at 10 K and at high resolution. Of the 24 external and 60 internal phonons expected for the D_2h factor group of α-P₄S₃ we have observed 16 external and 38 internal phonons. The effect of the layer lattice has been proposed to explain the absence of some expected phonon structure. The present work together with an earlier study of the pressure and temperature dependence of the Raman-active phonons have enabled the 4A₁, A₂ and 5E internal molecular modes to be assigned. The resulting normal coordinates give good fits for the Raman-active bands of the heavy isotope P₄ ³²S₂ ³⁴S and for the mixed chalcogen species P₄S_{3 − x}Se_x.     

Investigation of a high-temperature phase of 3Bi2O3·2TeO2 binary oxide

The high-temperature phase of 3Bi₂O₃·2TeO₂ binary oxide is characterized by thermal analysis, X-ray powder diffraction, and¹²⁵Te Mössbauer spectroscopy. The phase, obtained by rapid quenching from 900 °C, is identified to be cubic Bi₆Te₂O₁₃ with an oxygen-deficient fluorite structure, which is isomorphous with -Bi₂O₃.     

氦原子2~3S—2~3P精密光谱研究

氦原子是最基本的多电子原子,其精密谱是十分理想的检验多电子量子电动力学计算的平台,同时也是利用原子能级结构测定精细结构常数α的理想体系,还能获得原子核结构信息.本文结合我们团队的工作,综述基于氦原子的少体原子精密光谱研究.其中,主要包括氦原子2~3P_J精细结构分裂,以及2~3S—2~3P跃迁频率测定等研究,并对相关工作的前景进行了展望.     

Adsorption of H2S at Stone–Wales defects of graphene-like BC3: a computational study

We employed density functional theory to characterise H₂S adsorption, and dissociation on the pristine and Stone–Wales (SW) defected BC₃ graphenes. H₂S is predicted to be weakly adsorbed on the pristine graphene with the adsorption energy of about 7.11 kcal/mol. Two types of SW defects were generated by rotating a C–C bond (SW-CC) or a B–C bond (SW-BC) by about 90°. We predict that, in contrast to SW-BC, dehydrogenation of H₂S is energetically more favourable on the SW-CC compared to the associative adsorption. It is also found that SW-CC formation is more favourable than the formation of SW-BC. Molecular adsorption of H₂S on both of the SW defected sheets is more favourable than that on the pristine sheet. The preferable adsorption process on the SW-BC and SW-CC defected graphene sheets is via associative and dissociative mechanisms, respectively. Furthermore, the highest occupied molecular orbital and lowest unoccupied molecular orbital energy gap of the SW-BC defected sheet is highly sensitive to the adsorption process which may be used for the detection of H₂S.     

Translational Invariance in Phase Diagram of S = 1／2, 3／2 Spin Glass Systems

By using the replica method and the functional integral technique, the quantum XY spin glass model with ferromagnetic coupling is investigated numerically. From the numerical results of the thermodynamic and magnetic quantities we found that these quantities do not vary with the mean exchange interaction when the mean exchange interaction is lower than 1. This feature demonstrates that there are the mean interaction translational symmetries in the spin-glass and paramagnetic phases.     

Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures

In₂S₃ thin films were deposited onto indium tin oxide-coated glass substrates by chemical spray pyrolysis while keeping the substrates at different temperatures. The structures of the sprayed In₂S₃ thin films were characterized by X-ray diffraction (XFD). The quality of the thin films was determined by Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy were used to explore the surface morphology and topography of the thin films, respectively. The optical band gap was determined based on optical transmission measurements. The indium sulfide phase exhibited a preferential orientation in the (0, 0, 12) crystallographic direction according to the XRD analysis. The phonon vibration modes determined by Raman spectroscopy also confirmed the presence of the In₂S₃ phase in our samples. According to SEM, the surface morphologies of the films were free of defects. The optical band gap energy varied from 2.82 eV to 2.95 eV.