Departures from theory of the experimental line profile of Helium(I) 4471.5 Å

We report discrepancies between the published theoretical calculations of the line profiles for allowed-forbidden transition pairs in neutral helium and observations of the He(I) line near 4471 Å in a pulsed arc plasma (nine ∽ 10¹⁶ cm^-3). Our observations suggest that insufficient wavelength precision in the results reported previously by others has obscured the apparent fact that the peaks in the experimental profile do not follow the wavelength shifts predicted by theory.     

MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions

The paper reports on photoelectrical performance of the mid-wave infrared HgCdTe detector for high operating temperature condition. Detector structure was simulated with APSYS numerical platform by Crosslight Inc. The comprehensive analysis of the detector performance such as dark current, detectivity, time response vs. device architecture and applied bias has been performed. The N⁺pP⁺n⁺ HgCdTe heterostructure photodiode operating in room temperature at a wavelength range of 2.6–3.6 μm enabled to reach: detectivity ～8.7×10¹⁰ cmHz^1/2/W, responsivity ～1.72 A/W and time response ～ 145 ps (V = 200 mV).     

Transverse magnetoresistance and Hall effect in p-type tellurium in strong magnetic fields

Galvanomagnetic effects in tellurium with carrier concentrations ranges from 10¹⁴ ∽7×10¹⁵cm^-3 were measured at liquid helium temperatures in intense magnetic fields up to 90 kOe. In slightly doped crystals, whose carrier concentrations were about 3 ∽ 7 × 10¹⁵cm^-3, the magnetic field dependences of the Hall coefficient and the transverse magnetoresistance were found to be different from those in purer crystals. The results can be explained by assuming the existence of an impurity band and by taking into account the complicated structure of the Landau levels.     

Nonlinear optical response of Ge nanocrystals in silica matrix with excitation of femtosecond pulses

We report an investigation of third-order optical nonlinearities in Ge nanocrystals (∼6 nm radius) embedded in silica matrix using the Z-scan and pump-probe techniques with femtosecond laser pulses at 780-nm wavelength. The nanocrystallite Ge samples were prepared using magnetron co-sputtering and post-thermal annealing at 800 °C. The nonlinear absorption coefficient and refractive index of the Ge nanocrystals were determined to be in the range from 1.8×10^-7 to 6.8×10^-7 cm/W and 1.5×10^-12 to 8.0×10^-12 cm²/W, respectively, which are proportional to the Ge atomic fraction in the matrix. Relaxation of the nonlinear response was found to have two characteristic time constants, 1.8 ps and 65 ps. The mechanisms responsible for the observed nonlinear response are discussed. Received: 21 August 2000 / Revised version: 17 January 2001 / Published online: 30 March 2001     

从核心天线到反应中心分子传能研究

利用飞秒时间分辨光谱技术研究了PSⅡ核心复合物内β-Car分子和Chla分子传递光能到反应中心的时间特性.实验测得,在CP47中的β-Car分子用了150 ps,Chla分子用了15 ps;在CP43中β-Car分子用了160 ps,Chla分子用了20 ps.利用超快光谱动力学实验曲线,理论计算出在核心天线中β-Car分子到Chla 662之间的能量传递速率为1.18×10¹²s^-1,β-Car分子到相邻β-Car分子之间按速率 1.14×10¹²s^-1传递能量.理论研究得出,在核心天线中β-Car分子接收到光能,以Dexter电子交换机制和Frster共振传能机制进行激发能传递,最后由Chla分子把能量传递到反应中心,在CP47中用了139 ps,在CP43中用了152 ps.理论研究表明,在核心天线中,Chla分子接收到光能之后,以随机转移方式将能量迅速传递到反应中心P680,在CP47中用了16.8 ps,在CP43中用了18 ps.理论研究与实验研究基本符合.     

Influence of laser pulse width on absolute EUV-yield from Xe-clusters

Using 50 fs ( ∼ 2×10¹⁸ W/cm²) and 2 ps ( ∼ 5×10¹⁶ W/cm²) pulses from a Ti:Sa multi-TW laser at 800 nm wavelength large Xe-clusters ( 10⁵...10⁶ atoms per cluster) have been excited. Absolute yield measurements of EUV-emission in a wavelength range between 10 nm and 15 nm in combination with cluster target variation were carried out. The ps-laser pulse has resulted in about 30% enhanced and spatially more uniform EUV-emission compared to fs-laser excitation. Circularly polarized laser light instead of linear polarization results in enhanced emission which is probably caused by electrons gaining higher energies by the polarization dependent optical field ionization process. An absolute emission efficiency at 13.4 nm of up to 0.8% in 2π sr and 2.2% bandwidth has been obtained. Received 11 January 2001 and Received in final form 27 March 2001     

The use of a LiNbO3 deflector in a ∽ 100 ps resolution streak camera

This paper describes the performance of a LiNbO₃ electro-optic deflector. Used in the streak mode, the device is shown to yield better than 100 ps temporal resolution. Some simple improvements in the streak circuit and in the electrode geometry should allow ∽ 25 ps resolution to be obtained.     

Design and analysis of novel highly nonlinear photonic crystal fibers with ultra-flattened chromatic dispersion

The present article describes novel highly nonlinear photonic crystal fibers (HN-PCFs) with flattened chromatic dispersion and low confinement losses. The proposed design has been simulated based on the finite-difference method with anisotropic perfectly matched layers absorbing boundary condition. It is proved that the design novel HN-PCFs is obtained a nonlinear coefficient greater than 45 W⁻¹ km⁻¹ and low dispersion slope −0.009 ps/(nm².km) at 1.55 μm wavelength. In addition, results from numerical simulation show that the ultra-flattened dispersion of 0 ± 0.65 ps/(nm.km) can be obtained in a 1.36-1.62 μm wavelength range with confinement losses lower than 10⁻⁷ dB/m in the same wavelength range. Another advantage of the proposed HN-PCFs is that it possessed modest number of design parameters.     

Potassium-48

The decay of ⁴⁸K has been studied for the first time. This activity was produced by means of the ⁴⁸Ca(n,p) reaction with 14 MeV neutrons. A group of five levels in ⁴⁸Ca near 7 MeV accounts for ∽ 75% of the ⁴⁸K β-decay strength.     

Carrier concentration dependence of optical Kerr nonlinearity in indium tin oxide films

Optical Kerr nonlinearity (n₂) in n-type indium tin oxide (ITO) films coated on glass substrates has been measured using Z-scans with 200-fs laser pulses at wavelengths ranging from 720 to 780 nm. The magnitudes of the measured nonlinearity in the ITO films were found to be dependent on the carrier concentration with a maximum n₂-value of 4.1×10^-5 cm²/GW at 720-nm wavelength and an electron density of N_d=5.8×10²⁰ cm^-3. The Kerr nonlinearity was also observed to be varied with the laser wavelength. By employing a femtosecond time-resolved optical Kerr effect (OKE) technique, the relaxation time of OKE in the ITO films is determined to be ∼1 ps. These findings suggest that the Kerr nonlinearity in ITO can be tailored by controlling the carrier concentration, which should be highly desirable in optoelectronic devices for ultrafast all-optical switching. PACS 42.65.An; 42.65.Hw; 78.40.Fy     

Conditions for XUV amplification considering recombination in clusters

3 cm^-l for a wavelength of λ_R≈200 Å in a time ≲1 ps can be expected. The measurable gain G_real depends on the cluster density N_cl. For N_cl≈10¹⁶ cm^-3 we expect G_real≳20 cm^-1. Received: 30 October 1997     

Highly nonlinear dispersion-flattened square photonic crystal fibers with low confinement losses

A new simple structure of an index-guiding highly nonlinear dispersion-flattened square photonic crystal fiber (HNDFSPCF) with low confinement losses is proposed. The results reveal that it is possible to design five-rings HNDF-SPCFs with a flattened dispersion of 0.43 ps/(nm·km), low dispersion slope of -0:02 ps/(nm²·km), low confinement loss of approximately 10³ dB/m, and a large nonlinear coefficient of approximately 35W^-1 km^-1 at 1.55 μm. It is also observed that the confinement loss is less than 10^-1 dB/m in the wavelength range of 1.2 –1.7 μm.     

Picosecond gain dynamics of KrF

We describe the generation of excimer-laser pulses of <10 ps pulse width and up to 40 mJ pulse energy at 248.5 nm and their use in the measurement of ps gain dynamics in a KrF amplifier. Small-signal gain of >2×10⁴, saturation energy density of 2.0 mJ/cm², and gain recovery time of 4 ns were measured. In contrast to XeCl^* no short-gain rcovery time was found in KrF^* and the stored inversion could be fully depleted bya single ps pulse.     

The kinetics of donor-acceptor pair transitions with strong phonon coupling in GaP

Donor-acceptor pair luminescence in GaP was studied by time-resolved spectroscopy, by measuring and analysing the integral band decay over many decades of intensity and time and by measuring and analysing the temperature dependence of the luminescence intensity. We report here the results obtained with some or all of these techniques for pairs involving deep as well as shallow centres. Those with a deep centre are: S_P-Si_P and Si_Ga-Si_P, in which the acceptor is the deep centre, and O_P-C_P and O_P-Zn_Ga, in which the donor is the deep centre. These pairs all have a broad, phonon-dominated luminescence band. The pairs involving shallow centres include Si_Ga-C_P, S_P-C_P and Te_P-C_P. Due to the different way of momentum conservation in these pairs, those involving a donor on a Ga-site have strong phonon co-operation and weak zero-phonon (ZP) transitions, whereas those with a donor on a P-site have strong ZP transitions.With time-resolved spectroscopy, well-resolved structure, due to a ZP pair band and its phonon replicas, is obtained for nearly all pairs. A comparison is made with the structure obtained by measuring in the stationary state at very low excitation densities. Some trends in the strength of phonon co-operation are noted. In the case of Si_Ga-C_P pairs, sharp replicas of ZP pair lines with a momentum-conserving phonon are also resolved.Using the integral band decay technique and results from time-resolved spectroscopy we have determined the transition probabilities for the total luminescence band as well as for the ZP band for nearly all pairs mentioned. The influence of incomplete saturation of the pairs during excitation with a focussed beam of an argon-ion laser is discussed and approximately corrected for. Extrapolated to zero pair separation, the total transition probability ranges from ∽ 10⁵s^-1 for Si_Ga-C_P pairs to ∽ 15 × 10⁵s^-1 for O_P-C_P and O_P-Zn_Ga pairs. The ZP probability ranges from ∽ 4 × 10³s^-1 for Si_Ga-C_P and Si_Ga-Si_P pairs to ∽ 4 × 10⁵s^-1 for S_P-C_P pairs. The transition probability for pairs in GaP is discussed in relation to the site occupied by the donor and the depth of the centres involved. The relatively high dope concentrations used in some cases, ∽ 1 to 2 × 10¹⁸cm^-3, are discussed briefly in relation to “concentration quenching”.The temperature dependence of the luminescence intensity of S_P-Si_P pairs is satisfactorily analysed with a simple linear model. The same model is applied to similar literature data on the S_P-C_P pair luminescence. Using in addition data on the average pair transition probability, trapping rate constants for hole capture by the Si_P and C_P acceptors were calculated to be ∽ 10^-9 cm³s^-1. Evidence is presented that the trapping rate constant for holes by the Zn_Ga-O_P complex is about 2 × 10^-9 cm³s^-1.     

Bandwidth-limited time-synchronized frequency tunable double pulse generation in a branched picosecond Nd: glass laser

Nearly bandwidth-limited, time-synchronized, frequency tunable picosecond pulses are generated in an active and passive mode-locked laser consisting of an Nd: silicate glass and an Nd: phosphate glass branch and a common antiresonant ring. An electro-optic Q-switch, an acousto-optic modulator and a saturable absorber in the antiresonant ring are responsible for mode locking and time synchronization. Three-plate birefringent filters in the gain branches are used for spectral narrowing (pulse duration broadening) and wavelength tuning. Pulses of 40 ps duration with a synchronization jitter of 10 ps are generated. A frequency tuning range from 0 to 350 cm^-1 is achieved.     

Time distribution of γ-rays from spontaneous fission of 252Cf at short times

The gross time distribution of γ-rays from spontaneous fission of ²⁵²Cf has been measured in the time range 10^?14?10^?10 s after fission for γ-ray energies greater than 0.15 MeV. The measurements have been made by a new method based upon the solid angle aberration. From the measured correlation between half-lives and γ-ray transition energies it is concluded that the transitions are predominantly E2, single-particle transitions at high energies, and mostly vibrational and rotational transitions at lower energies. Some contribution of E1 transitions and M1-E2 mixtures cannot be excluded, however. It was found that about 30% ofthe γ-rays emitted within 12 ns with energies greater than 0.10 MeV, have half-lives shorter than 1 ps and about 52 % half-lives between 1 and 100 ps. The relative yield of γ -rays and γ-ray energy in the time range 10^?14 to 1.2 × 10^?7 s ater fission is given.     

Flattened chromatic dispersion in square photonic crystal fibers with low confinement losses

This research presents a simple index-guiding square photonic crystal fibers (SPCFs) that has a silica core surrounded by air hole with two different diameters. It is demonstrated that the designed two-different-size hole-arrayed index-guiding SPCFs has a ultra-flattened chromatic dispersion of 0 ± 0.9 ps/(nm·km) in a wavelength range of 1.34 to 1.61 μm and low confinement loss of less than 10⁻⁷ dB/m in a wavelength range of 1.2 to 1.7 μm. It has also been shown that the proposed SPCFs show reasonable dispersion tolerance.     

The mass yield distribution of fragments studied with improved antisymmetrized molecular dynamics

The radiative decays of 4.7 d^119m Te and 16 h^119g Te have been re-investigated. Compared to previous investigations, almost twice more transitions have been observed. Revised decay schemes are proposed in which most of the observed transitions are attributed. The half lives of the levels at 270.45 keV (g 7/2), 644.01 keV (s 1/2), 1212.69 keV (9/2⁺) and 1366.15 keV (h 11/2) have been measured by means of the delayed coincidence method and found to be 35±10ps, <10ps, <10 ps and 112±15 ps respectively. The states are discussed in the framework of current models.     

Second harmonic generation accompanying linear mode conversion in a laser-produced plasma

Second harmonic (SH) generation in a laser produced plasma (NdYAG laser with wavelength 1.06 μm, pulse duration 30 ps, intensity 10¹³Wcm^-2) was investigated experimentally as a function of polarization and angle of incidence of the laser beam. The results are in agreement with theoretical predictions for SH generation in the presence of linear mode conversion in the plasma.     

Radiation chemistry of tris(acetylacetonato) cobalt(iii) in aqueous solutions

Abstract

On radiolysis tris(acetylacetonato) cobalt(III) in aqueous solutions is found to get reduced by reaction with (1) hydrated electrons, (2) H atoms, (3) OH radicals and (4) C₂H₂OH radicals. The bimolecular rate constants for the first three reactions, determined by competition kinetics are: 4 × 10¹⁰, 2.3 × 10⁹ and 4.7 × 10⁹ M^?1sec^?1 respectively. Absorption spectra of the irradiated solutions indicate the formation of bis(acetylacetonato) cobalt(II) from reaction (1), but not from (3). The total cobaltous yield in air-free solutions is given byG(Co⁺⁺) = 5.6 and 6.5 at pH 6.5 and 1 respectively. It appears that G_eaq- ∽ _H ⁺ G_oH ∽ 2.8 in neutral solutions. Considerations of material balance for the primary yields of radiolysis of water suggest the possibility that the so-called independent H-atoms in neutral solutions are probably excited water molecules or ion-pairs.