Diameter-dependent coercivity of cobalt nanowires

We show that the coercivity of electrochemically grown cobalt nanowires (NWs) within the pores of a polycarbonate membrane can be changed to a large extent by tuning their diameters. The face centered cubic crystalline structure of the NWs having diameter in the range of 10 to 200 nm could be retained. Smaller diameter wires (below 30 nm) are found to be single crystalline and oriented in the [110] growth direction, but for higher diameter wires the crystallite size became very small. Magnetization measurements with an applied field parallel to the axis of the NWs show that the nature of the M–H loop changes from square to linear as the diameter of the NWs increases. The coercivity was found to be 1700 Oe and 480 Oe at 5 K (1000 Oe and 250 Oe at 300 K) for 10 nm and 100 nm wires, respectively. The observed changes in the nature of the M–H loop and in coercivity could be explained following the Stoner–Wohlfarth model and using the fact that the domain size reduces as the diameter of the wires increases.     

Holographically recorded reverse-mode transmission gratings in polymer-dispersed liquid crystal cells

We have synthesized one-dimensionally structured and switchable reverse-mode transmission gratings in polymer-dispersed liquid crystalline materials by holographic exposure technique using the 540 nm wavelength from a solid-state laser. These structures offer the potential for electrically switchable diffractive optical elements, whose functionality can be switched on by applied electric fields. We present results for the diffraction efficiency (η) as functions of curing-time, intensity of the writing-beams, polarizations of the writing, as well as probe beams, and frequency of the electric field. For exposure times much shorter than the time needed for complete-cure of the grating structure, η increases upon application of the electric field; for an electric field of 14 MV/m @1.1 kHz, we observe $\frac{\Delta\eta}{\eta}\sim 1100\%$ with switching time constant of ～15 ms.     

High-rate reactive magnetron sputtering of zirconia films for laser optics applications

ZrO₂ exhibits low optical absorption in the near-UV range and is one of the highest laser-induced damage threshold (LIDT) materials; it is, therefore, very attractive for laser optics applications. This paper reports explorations of reactive sputtering technology for deposition of ZrO₂ films with low extinction coefficient k values in the UV spectrum region at low substrate temperature. A high deposition rate (64 % of the pure metal rate) process is obtained by employing active feedback reactive gas control which creates a stable and repeatable deposition processes in the transition region. Substrate heating at 200 °C was found to have no significant effect on the optical ZrO₂ film properties. The addition of nitrogen to a closed-loop controlled process was found to have mostly negative effects in terms of deposition rate and optical properties. Open-loop O₂ gas-regulated ZrO₂ film deposition is slow and requires elevated (200 °C) substrate temperature or post-deposition annealing to reduce absorption losses. Refractive indices of the films were distributed in the range n = 2.05–2.20 at 1,000 nm and extinction coefficients were in the range k = 0.6 × 10^?4 and 4.8 × 10^?3 at 350 nm. X-ray diffraction analysis showed crystalline ZrO₂ films consisted of monoclinic + tetragonal phases when produced in Ar/O₂ atmosphere and monoclinic + rhombohedral or a single rhombohedral phase when produced in Ar/O₂ + N₂. Optical and physical properties of the ZrO₂ layers produced in this study are suitable for high-power laser applications in the near-UV range.     

Photochemical Properties of a Novel Cyanobacteriochrome from Anabaena sp. PCC7120

Cyanobacteriochromes are phytochrome homologues in cyanobacteria that act as photoreceptor sensors. We report the photochemistry of All4261 GAF2, a novel cyanobacteriochrome from the heterocyst-forming cyanobacterium Anabaena sp. PCC 7120. All4261 contains four tandemly arranged GAF domains. The respective chromophore domains were co-expressed in Escherichia coli with the genes for phycocyanobilin biosynthesis enzymes, HO1, and PcyA. The resulting proteins were analyzed by zinc-induced fluorescence, UV-Vis absorption and emission fluorescence spectra. Only All4261 GAF2 binded chromophore covalently, having zinc-induced fluorescence band in SDS-PAGE gel with the zinc acetate solution existed. Absorption spectra analysis showed that All4261 GAF2 had absorption peaks at 340 nm and 590 nm, failing to show photoreversibility. Fluorescence spectra revealed that All4261 GAF2 had a fluorescence emission peak at 645 nm, with high fluorescence quantum yield and molar extinction coefficient.     

Nonlinear beam clean-up using resonantly enhanced sum-frequency mixing

We investigate the possibility of improving the beam quality and obtaining high conversion efficiency in nonlinear sum-frequency generation. A 765 nm beam from an external cavity tapered diode laser is single-passed through a nonlinear crystal situated in the high intracavity field of a 1342 nm Nd:YVO₄ laser, generating a SFG beam at 488 nm. The ECDL have M _H ² =1.9 and M _V ² =2.4 and the solid-state laser has M ²<1.05. Varying the focusing of the 765 nm beam, the conversion efficiency and the beam quality of the generated 488 nm beam change correspondingly. We show that it is possible to improve the M ² of the 488 nm beam to less than 1.3 while preserving a high conversion efficiency of the SFG process.     

Hole transport characteristics in phosphorescent dye-doped NPB films by admittance spectroscopy

Admittance spectroscopy is a powerful tool to determine the carrier mobility. The carrier mobility is a significant parameter to understand the behavior or to optimize the organic light-emitting diode or other organic semiconductor devices. Hole transport in phosphorescent dye, bis[2-(9,9-diethyl-9H-fluoren-2-yl)-1-phenyl-1Hbenzoimidazol-N,C3] iridium(acetylacetonate [(fbi)₂Ir(acac)]) doped into N,N-diphenyl-N,N-bis(1-naphthylphenyl)-1,1-biphenyl-4,4-diamine (NPB) films was investigated by admittance spectroscopy. The results show that doped (fbi)₂Ir(acac) molecules behave as hole traps in NPB, and lower the hole mobility. For thicker films(?300 nm), the electric field dependence of hole mobility is as expected positive, i.e., the mobility increases exponentially with the electric field. However, for thinner films (?300 nm), the electric field dependence of hole mobility is negative, i.e., the hole mobility decreases exponentially with the electric field. Physical mechanisms behind the negative field dependence of hole mobility are discussed. In addition, three frequency regions were divided to analyze the behaviors of the capacitance in the hole-only device and the physical mechanism was explained by trap theory and the parasitic capacitance effect.     

Laser-induced periodic surface structures formed on the sidewalls of microholes trepanned by a femtosecond laser

Laser-induced periodic surface structures (LIPSSs) were observed on the sidewalls of 300-μm-diameter holes trepanned on cemented tungsten carbide using femtosecond laser pulses at a wavelength of 800 nm. For a circularly polarized beam, LIPSSs were formed at a period of 300 nm and oriented perpendicularly to the plane of incidence on the sidewalls. For a linearly polarized beam, LIPSS formation was dependent on the relative angle α between the polarization direction and the plane of incidence. For relative angles α from 0° to 70° and from 110° to 180°, LIPSS spacing was 300 nm. However, there were two types of LIPSSs coexisting from 70° to 110°. One had a spacing of 120 nm and the other had a spacing that varied from 500 to 760 nm. It was found that the orientation angle of LIPSSs measured between the LIPSS orientation and the plane of incidence had a nonlinear dependence on α. To understand this dependence, a model was proposed in which LIPSSs are assumed to align perpendicularly to the direction of the absorbed electric field lying in the tangent plane of the sidewall of a drilled hole. The calculated results from this model showed good agreement with the experimental results.     

Optimization of perpendicular magnetic anisotropy tips for high resolution magnetic force microscopy by micromagnetic simulations

Magnetic Force Microscopy (MFM) tip coated with perpendicular magnetic anisotropy film (PMA tip) is one of the choices for high resolution imaging at low scan height (SH), since it has negligible tip–sample interaction related to its stable magnetic state, sharp, and small tip stray field. In this work, detailed micromagnetic studies are carried out to understand the effect of geometrical and magnetic parameters including the cone angle θ of the PMA tip, intergrain exchange constant $A_{2}^{*}$ , saturation magnetization M _s and uniaxial crystalline anisotropy constant K ₁ of the tip coating on the MFM tip resolution. To evaluate the resolution performance of the optimized PMA tip, MFM images of high-density granular recording media and patterned media are simulated. We find that, for the PMA tip and its coating, a cone angle in a range of 36.9^° to 53.1^°, a saturation M _s of 700 emu/cm³, a large uniaxial crystalline anisotropy constant K ₁ (>4.9×10⁶ erg/cm³) and a high intergrain exchange constant $A_{2}^{*}$ of (0.3–1.0)×10^?6 erg/cm are optimized conditions for high resolution imaging. The optimized PMA tip has an excellent performance on imaging of high-density thin film media (bit size of 8×16 nm²) at low SH of 2–8 nm and bit pattern media with a pitch of 50 nm, edge-edge spacing of 5–15 nm at SH of 8–15 nm.     

Phonon amplification in a quasi-one-dimensional GaAs quantum channel

We propose a calculation for the amplification coefficient γ_qof acoustical phonons interacting with electrons in a quasi-one-dimensional GaAs channel subjected to an external dc electric field. Two regimes of temperatures have been investigated and it has been found, by considering only intrasubband transitions, that the amplification coefficient for a particular frequency, and for phonons propagating along the channel length ( z -axis), is a step-like function of the applied field at low temperatures. For high temperatures the amplification coefficient shows an exponential behavior as a function of the applied electric field. Furthermore, provided the one-dimensional quantum channel has high electron mobility values, coherent acoustic-phonons can be amplified in modest electric fields.     

Picosecond nonlinearity of GeO2–Bi2O3–PbO–TiO2 glasses at 532 and 1,064 nm

The third-order optical properties of GeO₂–Bi₂O₃–PbO–TiO₂ glasses at 532 nm and 1,064 nm were studied to evaluate their potential for optical limiting and all-optical switching. The Z-scan technique was used to determine the nonlinear (NL) refractive index, n ₂, and the NL absorption coefficient, α ₂, of samples with different amounts of the constituent oxides. Values of n ₂ ≈ + 0.7 × 10^?14 cm²/W at 1,064 nm and ≈+1.5 × 10^?14 cm²/W at 532 nm were measured. The NL absorption coefficient, α ₂, was smaller than the minimum that our apparatus can measure (α ₂ < 0.01 cm/GW) in the near-infrared (1,064 nm); in the visible region (532 nm), we obtained α ₂ ≈ 4.4 cm/GW. The set of NL parameters measured indicates the potential usefulness of the GeO₂–Bi₂O₃–PbO–TiO₂ glasses for all-optical switching at 1,064 nm and for optical limiting at 532 nm.     

Synthesis and luminescent properties of BaGd2O4:Dy3+, an novel scintillating phosphor

The BaGd_2?x O₄:xDy³⁺ (0 ≤ x ≤ 0.08) phosphors were synthesized at 1,300 °C in air by the solid-state reaction route. The as-synthesized phosphors were characterized by X-ray powder diffraction, photoluminescence excitation spectra, photoluminescence (PL) spectra, X-ray excited luminescence (XEL) spectra, and thermoluminescence (TL) spectra. It is found that the quenching concentration of Dy³⁺ ions in BaGd₂O₄ host is dependent on the selected excitation wavelength. The optimal PL intensity for the investigated BaGd_2?x O₄:xDy³⁺ phosphors is found to be x = 0.01, 0.02, and 0.04, upon excitation by 234, 277, and 350 nm ultraviolet light, respectively. The energy transfer among Dy³⁺ ions upon excitation by 350 nm is confirmed to be an electric dipole–dipole interaction mechanism based on the fitting of Huang’s rule. In addition, the intensive XEL from BaGd₂O₄:Dy³⁺ phosphor is observed by the naked eyes at room temperature, and TL properties of the investigated phosphors are analyzed and discussed. All the results imply that the investigated phosphors could be a promising scintillating phosphor.     

Investigation of structural and optical properties of 100 MeV F7+ ion irradiated Ga10Se90-xAlx thin films

Present work focuses on the effect of swift heavy ion (SHI) irradiation of 100 MeV F⁷⁺ ions by varying the fluencies in the range of 1 × 10¹² to 1 × 10¹³ ions/cm² on the morphological, structural and optical properties of polycrystalline thin films of Ga₁₀Se_90-xAl_x (x = 0, 5). Thin films of ~300 nm thickness were deposited on cleaned Al₂O₃ substrates by thermal evaporation technique. X-ray diffraction pattern of investigated thin films shows the crystallite growth occurs in hexagonal phase structure for Ga₁₀Se₉₀ and tetragonal phase structure for Ga₁₀Se₈₅Al₅. The further structural analysis carried out by Raman spectroscopy and scanning electron microscopy verifies the defects or disorder of the investigated material increases after SHI irradiation. The optical parameters absorption coefficient (α), extinction coefficient (K), optical band gap (E_g) and Urbach’s energy (E_U) are determined from optical absorption spectra data measured from spectrophotometry in the wavelength range 200–1100 nm. It was found that the values of absorption coefficient and extinction coefficient increase while the value of optical band gap decreases with the increase in ion fluence. This post irradiation change in the optical parameters was interpreted in terms of bond distribution model.     

Dependence of ablation threshold and LIPSS formation on copper thin films by accumulative UV picosecond laser shots

The ablation threshold and Laser-induced periodic surface structure (LIPSS) formation on copper thin film were investigated using a picosecond laser (Nd:YAG laser: 266 nm, 42 ps, 10 Hz). We show that the ablation threshold varies with respect to the number of laser shots (N) on two different substrates. The single-shot ablation threshold was estimated to be close to 170 ± 20 mJ/cm². The incubation coefficient was estimated to be 0.68 ± 0.03 for copper thin films on silicon and glass substrates. In addition, morphology changes of the ablated regions, in the same spot area, were studied as a function of fluence and number of laser shots. An intermediate structure occurred with a mix of low spatial frequency LIPSS (LSFL), high spatial frequency LIPSS (HSFL) and regular spikes at a fluence F < 250 mJ/cm² and 1,000 < N ≤ 10.000 shots. LSFL was observed with a spatial period close to the irradiation wavelength and an orientation perpendicular to the laser polarization, and HSFL with a spatial period of ～120 nm and a parallel orientation. Lastly, the global relationship between the laser parameters (i.e. fluence and number of shots) and LIPSS formation was established in the form of a 2D map.     

Defect-dominated optical emission and enhanced ultraviolet photoconductivity properties of ZnO nanorods synthesized by simple and catalyst-free approach

We report on the defect-dominated light emission and ultraviolet (UV) photoconductivity characteristics of ZnO nanorods (NRs) fabricated using a facile, cost-effective, and catalyst-free thermal decomposition route under varying reaction temperatures. The morphological and structural studies reveal the formation of homogeneous quality nanorods in large scale at the highest reaction temperature of 600 ^°C. The luminescence feature of the nanorods is dominated by the defect related emission over the typical band edge emission. The variation of band-edge and native defect-related emission response of the samples has been correlated to the morphology and microstructure. In photoconductivity studies, the I–V characteristics of the ZnO NRs prepared at different reaction temperatures in dark and under UV illumination (λ=365 nm) follow the power law, i.e., IαV ^r . An enhanced ultraviolet photodetection has been observed in the nanorods fabricated at the highest reaction temperature of 600 ^°C. The sample prepared at highest reaction temperature of 600 ^°C exhibits UV photosensitivity value (photo-to-dark current ratio) of around 1.18×10³, which is much higher in magnitude compared to that of the samples prepared at lower reaction temperatures. The enhanced photoconductivity may be assigned to the development of uniformity and homogeneity of the nanorods. Further development of such ZnO nanostructures can form the basis of promising prototype luminescent and UV photodetecting devices.     

Theoretical and experimental research on spectral performance and laser induced damage of Brewster's thin film polarizers

Polarizers respectively with broad polarizing region bandwidth, large layer thickness error tolerance and high extinction ratio are designed and prepared. Transmittance spectra of the prepared samples are measured at Brewster's angle, and the results show that different requirements can be fulfilled by optimized designs. Spectral performance of designs with higher layer thickness error tolerance coincides better with the theoretical spectra. Laser induced damage threshold of the prepared samples are evaluated. Electric field distribution, defect, film absorption, and damage morphology are investigated, and the results indicate that electric field distribution in high index layers is the main reason that causes the difference of laser induced damage threshold. For both p polarized and s polarized light, the lower the electric field peak value and the farther the layer, which has the strongest electric field away from air, the higher the laser induced damage threshold.     

Controlling the demagnetizing field of an in-plane free layer by exchange coupling with a perpendicular multilayer

The demagnetizing field of a Co₅₀Fe₅₀ free layer in an in-planemicron-sized magnetic tunnel junction (MTJ) can be partially compensated by exchangecoupling with a [Co₉₀Fe₁₀/Pt] _N multilayer with perpendicular magnetic anisotropy via a Ru interlayer. The perpendicularanisotropy for N = 5 is optimized for nominal CoFe and Pt thicknessof 0.4 nm and 1.0 nm, respectively. An increase of tunnel magnetoresistance (TMR) from 2%to 75% is observed in MTJs as the free layer thickness, t variesfrom 1.0 nm to 3.0 nm. A phenomenological model is developed to interpret the TMRdependence in terms of the free layer magnetization rotation from in-plane to out-of-planewith decreasing t, a consequence of interlayer exchange coupling with theperpendicular multilayer. We suggest that this strategy could significantly reduce theswitching current density in such MTJs.     

Metastable states of hydrogen: their geometric phases and flux densities

We discuss the geometric phases and flux densities for the metastable states of hydrogen with principal quantum number n = 2 being subjected to adiabatically varying external electric and magnetic fields. Convenient representations of the flux densities as complex integrals are derived. Both, parity conserving (PC) and parity violating (PV) flux densities and phases are identified. General expressions for the flux densities following from rotational invariance are derived. Specific cases of external fields are discussed. In a pure magnetic field the phases are given by the geometry of the path in magnetic field space. But for electric fields in presence of a constant magnetic field and for electric plus magnetic fields the geometric phases carry information on the atomic parameters, in particular, on the PV atomic interaction. We show that for our metastable states also the decay rates can be influenced by the geometric phases and we give a concrete example for this effect. Finally we emphasise that the general relations derived here for geometric phases and flux densities are also valid for other atomic systems having stable or metastable states, for instance, for He with n = 2. Thus, a measurement of geometric phases may give important experimental information on the mass matrix and the electric and magnetic dipole matrices for such systems. This could be used as a check of corresponding theoretical calculations of wave functions and matrix elements.     

Asymmetric Fano resonance and bistability in a two-ring resonator optical switch with high extinction ratio and low switching threshold

We propose a two-ring resonator configuration that can provide optical switching with both high extinction ratio (ER) and low switching threshold. The achievable input threshold is n ₂I_IN ~ 10^?5 or smaller, which is one order lower than that of the conventional one-ring configuration, while maintaining an ER of at least 10dB over a 10-GHz (0.1 nm) optical bandwidth. This performance is enabled by using an asymmetric Fano resonance as opposed to the usual symmetric resonance. The low switching threshold and the high ER are related to the sharpness and the asymmetricity of the Fano resonance, respectively.     

Optical spectroscopic investigations on silver doped sodium phosphate glass

This research investigates the optical spectroscopic characteristics of silver-doped phosphate antibacterial glasses with chemical compositions 42P₂O₅–42ZnO–(16?x) Na₂O, (where x = 0, 0.4, 0.8, 1.2, 1.6 Ag₂O). The glass samples were prepared by conventional melting quenching techniques. The structures of all the homogenous prepared glasses were studied by XRD, and UV–Vis spectroscopy. The glass formability was tested and the amorphous nature was approved using XRD-technique. Archimedes method has been employed to measure the density of the samples hence, the molar volume was calculated. The molar volume and density shows discontinuity of measurements under effect of increasing Ag₂O concentration. The optical spectroscopic analyses for the obtained glass samples has been investigated over the whole range (190–2500 nm) for studying the effect of bandpass absorption glass filter, its color peak center and UV cut-off. Transmittance of some glass samples showed cut-off for UV and short visible wavelengths in some glass samples, so these samples composition can be considered as long-pass edge filters and from band stop ranges started from 190 to 515 nm and increase by increasing doped silver concentration. The optical energy gap decreases by increasing the Ag₂O concentration from 4.43 to 3.61 eV. The refractive index and extinction coefficient and some optical properties are studied and the results indicate clearly that there is no high remarkable change with changing wavelength. The refractive index is found to be increased by increasing the Ag₂O content. The wavelength dependence of extinction coefficient and the dielectric constants exhibit higher values for higher Ag₂O contents.     

Catalyst-free highly vertically aligned ZnO nanoneedle arrays grown by plasma-assisted molecular beam epitaxy

This work describes the growth of highly vertically aligned ZnO nanoneedle arrays on wafer-scale catalyst-free c-plane sapphire substrates by plasma-assisted molecular beam epitaxy under high Zn flux conditions. The photoluminescence spectrum of the as-grown samples reveals strong free exciton emissions and donor-bound exciton emissions with an excellent full width at half maximum (FWHM) of 1.4 meV. The field emission of highly vertically aligned ZnO nanoneedle arrays closely follows the Fowler–Nordheim theory. The turn-on electric field was about 5.9 V/µm with a field enhancement factor β of around 793.