Volume reflection of 1-GeV protons by a bent silicon crystal

The volume reflection of 1-GeV protons by a bent crystal has been observed. The crystal is made of single crystal silicon. The (111) atomic planes are bent owing to the elastic quasimosaicity effect, which makes it possible to reduce the crystal length for a beam to 30 μm. It is found that the probability of the reflection effect is higher than the probability of the channeling effect (0.71 vs. 0.63), and the deflection angle of the protons reflected inside the crystal is equal to 1.39 ± 0.04 in terms of the critical angle for channeling under the conditions of the experiment (170 μrad). The width of the reflected peak is equal to 1.76 ± 0.04 in the same units. The protons that are not involved in channeling at the angular position of maximum channeling undergo volume reflection and are deflected in the direction opposite to the channeled beam by the angle 1.01 ± 0.05 in terms of the critical angle for channeling. The width of the reflected peak is equal to 1.94 ± 0.08 in the same units. Original Russian Text ? Yu.M. Ivanov, N.F. Bondar’, Yu.A. Gavrikov, A.S. Denisov, A.V. Zhelamkov, V.G. Ivochkin, S.V. Kos’yanenko, L.P. Lapina, A.A. Petrunin, V.V. Skorobogatov, V.M. Suvorov, A.I. Shchetkovsky, A.M. Taratin, W. Scandale, 2006, published in Pis’ma v Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2006, Vol. 84, No. 7, pp. 445–450.     

Special misorientations in localized deformation regions in Fe-3%Si alloy single crystals

Extended regions located at an angle of 20° to the rolling plane are observed inside deformation bands in a (110)[001] Fe-3%Si alloy single crystal at a high strain (～60%). These regions were interpreted earlier as shear bands. The lattice orientation in these bands is close to (110)[001], and their habit plane is parallel to the {112} planes of the deformed {111}〈112〉 matrix. The misorientations between the bands and the matrix group around special misorientations Σ9, Σ19a, Σ27a, and Σ33a, which are characterized by close angles of rotation about axis 〈110〉. During primary recrystallization, the (110)[001] grains growing from the bands retain segments of the corresponding special boundaries with the deformed matrix.     

Deflection of MeV protons by an unbent half-wavelength silicon crystal

The interaction of a 2?MeV proton beam with an ultrathin unbent Si crystal was studied through simulation and experiment. Crystal thickness along the beam was set at 92?nm, i.e., at half the oscillation wavelength of the protons in the crystal under planar channeling condition. As the nominal beam direction is inclined by less than the critical angle for planar channeling with respect to the crystal planes, under-barrier particles undergo half an oscillation and exit the crystal with the reversal of the transverse momenta; i.e., the protons are "mirrored" by the crystal planes. Over-barrier particles suffer deflection, too, to a direction opposite that of mirroring with a dynamics similar to that of volume reflection in a bent crystal. On the strength of such coherent interactions, charged particle beams can be efficiently steered through an ultrathin unbent crystal by the same physical processes as for thicker bent crystals.     

UHV-SEM observations of cleaning process and step formation on silicon (111) surfaces by annealing

The cleaning process and step formation by high temperature annealing up to 1250°C on the Si(111) surface are observed by an ultra-high-vacuum scanning electron microscope (UHV-SEM). The clean surface is composed of alternate planes of terraces and step bands with widths of several μm and 1 μm, respectively, in the 〈1?1?2〉 direction. Both planes are inclined by about 10° to each other. The surface steps are not only monolayer steps, but also higher steps comprising several monolayers. Monolayer steps join to form a high step, and 70–80 steps of several monolayers high form a step band by bunching in an average distance of several hundred A toward the 〈1?10〉 direction. The step structure depends on the annealing temperature and on the angle at which the cutting plane is off from the exact 〈111〉 orientation. In several studies of high energy reflection electron microscopy under small grazing angle incidence monolayer steps were observed on the terrace, but no rough structures like the step bands and high steps could be discerned. The step structure observed by the present experiment is compared with those observed by previous workers.     

Deflection of high-energy negative particles in a bent crystal through axial channeling and multiple volume reflection stimulated by doughnut scattering

Different kinds of deflection in a silicon crystal bent along the 〈111〉 axis was observed for 150 GeV/c   negative particles, mainly π⁻${\pi }^{-}$ mesons, at one of the secondary beams of the CERN SPS. The whole beam was deflected to one side in quasi-bound states of doughnut scattering (DSB) by atomic strings with the efficiency (95.4 ± 0.2)% and with the peak position close to the bend crystal angle, α=185 μrad$\alpha =185\text{μrad}$. It was observed volume capture of π⁻${\pi }^{-}$ mesons into the DSB states with a probability higher than 7%. A beam deflection opposite to the crystal bend was observed for some orientations of the crystal axis due to doughnut scattering and subsequent multiple volume reflections of π⁻${\pi }^{-}$ mesons by different bent planes crossing the axis.     

Remanenz und Ummagnetisierungsbeginn in Nickeleinkristallen

The hysteresis, especially the remanence, and the magnetostriction of nickel single crystal rods of 〈110〉, 〈111〉, 〈100〉 and medium orientation are measured at room temperature in a magnetic joke and their dependence on plastic deformation is investigated. In undeformed crystals the nucleation of reverse domains needs a negativeH-field several times the coercivity, thus causing an “overshooting” of the hysteresis. Very small plastic deformations initiate the formation of the reverse domains and destroy the overshooting. Similar to polycrystals, the remanence of the single crystals — except those with 〈100〉 as axis — falls steeply at the beginning of plastic deformation to about 40% of its initial value. The magnetization reversal and the role of nucleation processes are discussed for the different orientations.     

Dynamical chaos and stochastic mechanism of high-energy negatively charged particle deflection by bent crystals

Deflection of high-energy negatively charged particles in straight and bent crystals through multiple scattering by crystal atomic strings was considered for the case in which the initial angle between the particle momentum and one of the main crystallographic axes was approximately four critical angles of axial channeling. It was shown that in a bent crystal with a small crystal thickness, when the crystal bend was less than the beam incidence angle, the beam deflected in the direction opposite to the direction of the crystal bend. At larger crystal thicknesses, the large part of the beam starts to deflect in the direction of the crystal bend. In addition, there is a group of particles that follow the crystal axis bend in the angular region of approximately the critical angle of axial channeling with respect to the current direction of the crystal axis. It was shown that in all of these deflection processes, the periodicity of the location of atomic strings in the crystal does not influence the angular distributions of scattered particles. This fact is connected with the effect of dynamical chaos in particle motion in the periodical field of bent crystal atomic strings. It was also shown that observed in a recent CERN experiment effect of beam deflection, when the angle between the initial particle momentum and the crystal axis was approximately four critical angles of axial channeling, is due to peculiarities of the stochastic multiple scattering of particles by bent crystal atomic strings. These peculiarities are connected with the effect of dynamical chaos in particle motion in crystals.     

Optical properties of thin films of closely packed SiO2 spheres

Ordered, closely packed, defect-free one-, two-, and three-layer thick films of SiO₂ spheres of diameter D varying from 0.6 to 1.4 μm were obtained. Their optical transmittance and reflectance spectra were measured in the range 0.3–2.5 eV. The one-layer structures reveal a transmittance minimum whose spectral position is described by the Bragg law with the plane separation equal to the sphere radius D/2. As the number of the layers increases, a spectral feature appears which signals the formation of a photonic gap in the 〈111〉 direction of the fcc crystal lattice and is determined by the distance between the {111} planes equal to 0.816D. The spectra of two-and three-layer structures measured with a diverging light beam contain additional lines originating from the formation of photonic gaps by the {111} and {221} planes. __________ Translated from Fizika Tverdogo Tela, Vol. 44, No. 6, 2002, pp. 1026–1031. Original Russian Text Copyright ? 2002 by Bazhenov, Gorbunov, Aldushin, Masalov, Emel’chenko.     

Orientation dependences of the response of an electromagnetic spectrometer with oriented crystal converter

The experimental results of the study of orientation dependences of the response of a composite Cherenkov shower spectrometer with a converter made of a 1-mm tungsten crystal oriented along the 〈111〉 axis at an electron energy of 28 GeV and two converter temperatures, 293 and 77 K, are presented. The parameters of the cascade curve of the shower development are varied depending on the orientation angle and crystal temperature. It is found that there is a point S in the cascade curve of the shower development in the spectrometer, at which all cascade curves intersect at any converter orientation. The position of this point in the spectrometer depth depends on the converter temperature.     

Observation of channeling and volume reflection in bent crystals for high-energy negative particles

Deflection due to planar channeling and volume reflection in short bent silicon crystals was observed for the first time for 150 GeV/c negative particles, π⁻ mesons, at one of the secondary beams of the CERN SPS. The deflection efficiency was about 30% for channeling and higher than 80% for volume reflection. Volume reflection occurs, in spite of the attractive character of the forces acting between the particles and the crystal planes, in a wide angular range of the crystal orientations determined by the crystal bend angle.     

Volume reflection of a proton beam in a bent crystal

Volume reflection predicted in the mid-1980s by Taratin and Vorobiev has been observed for the first time in the interactions of a 70 GeV proton beam with a short bent crystal. Incident protons deviate from convex atomic planes in the bulk of the crystal as a result of coherent interaction with bent lattice around the tangency point of particle trajectory with a curved atomic plane. The deflection angle 2theta(R) was found to be (39.5+/-2.0) microrad, or (1.65+/-0.08)theta(c) in terms of the critical angle for channeling. The process has a large probability with respect to channeling and takes place in the angular range equal to the bend angle of atomic planes. It could possibly open new fields of application of crystals in high-energy particle beam optics.     

Bending of high energy beams using axial and planar channeling

A very strong and dramatic bending effect has been found for 12 GeV/c positive particles channeled along crystal axes and planes. For a combination of axial and planar channeling the bending efficiency is 5–10%. The maximum bending angle was 52 mrad obtained over a 20 mm long 〈111〉 Si-crystal. The axial channeling is also able to bend negative particles.     

Steering of Sub-GeV electrons by ultrashort Si and Ge bent crystals

We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. Crystals with 15 \(\upmu \)m of length, bent along (111) planes, were exploited to investigate orientational coherent effects. By using a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature, it was possible to study the steering capability of planar channeling and volume reflection vs. the curvature radius and the atomic number, Z. For silicon, the channeling efficiency exceeds 35%, a record for negatively charged particles. This was possible due to the realization of a crystal with a thickness of the order of the dechanneling length. On the other hand, for germanium the efficiency is slightly below 10% due to the stronger contribution of multiple scattering for a higher-Z material. Nevertheless this is the first evidence of negative beam steering by planar channeling in a Ge crystal. Having determined for the first time the dechanneling length, one may design a Ge crystal based on such knowledge providing nearly the same channeling efficiency of silicon. The presented results are relevant for crystal-based beam manipulation as well as for the generation of e.m. radiation in bent and periodically bent crystals.     

CVD金刚石薄膜孪晶形成的原子机理分析

采用X射线衍射技术、电子背散射衍射技术和扫描电镜分别观察了不同甲烷浓度条件下沉积的CVD自支撑金刚石薄膜的宏观织构、晶界分布和表面形貌. 研究了一阶孪晶在金刚石晶体{111}面生长的原子堆垛过程. 结果表明，由于一阶孪晶〈111〉60°的取向差关系以及{111}面的原子堆垛结构，使{111}面上容易借助碳原子的偏转沉积产生一阶孪晶. 低甲烷浓度时，碳原子倾向于在表面能较低的{111}面沉积，为孪晶的形成提供了便利，且高频率孪晶使薄膜织构强度减弱. 甲烷浓度升高使生长激活能较小的{001}面成为主要前沿生长面，因而只有〈001〉晶向平行薄膜法向的晶粒能够不断长大，因此孪晶形核概率明显减小. 另外，在薄膜中发现二阶孪晶，并对二阶孪晶的形成进行了分析. 关键词： 金刚石薄膜 孪晶 原子机理 取向差     

Multiplicity of charged particles in electron-induced showers developing in oriented silicon and tungsten crystals

A more than twofold increase in the average multiplicity of charged particles in electromagnetic showers initiated by electrons with an energy of 26 GeV in tungsten crystals 2.7, 5.8, and 8.4 mm thick, oriented along the 〈111〉 axis, in comparison with misoriented crystals is shown. For a silicon crystal 20 mm thick, oriented along the 〈110〉 axis, at an electron energy of 28 GeV, the average multiplicity of charged particles increases by a factor of ～1.6. The widths of the orientation dependences of the average multiplicity of charged particles in electron-induced showers in silicon and tungsten crystals are proportional to the crystal thickness and depend on the electron energy as E ^?1/2.     

Shear band formation in IF steel during cold rolling at medium reduction levels

The mechanisms of shear band formation in IF steel after cold rolling to ～50% reductions have been investigated using transmission electron microscopy. The observations revealed that shear bands were always parallel to a second set of microbands, where these exist, and contained within individual crystals, indicating that shear banding is controlled by orientation. Crystallographic analysis revealed that shear banding involves two mechanisms, dislocation glide and rigid-body rotation. In the first step, dislocation glide causes a rotation about the 〈211〉 axis to produce the so called ‘S’ band, which gives the shear band its crystallographic character. In the second step, when the most heavily stressed slip plane parallel to the shear band is of the form {110}〈111〉, rigid-body rotation continues about the 〈211〉 axis in the sheared zone and, then, a rotation about the transverse direction (TD) is promoted by the geometry of the sample. Using rigid-body matrix theory, the calculated orientations of shear bands are shown to be in agreement with experimental observations. The process outlined is capable of explaining how slip processes in grains that contain microbands, using either {110} or {112} slip planes, can produce crystallographic shear bands.     

单晶铜纳米线屈服机理的原子模拟研究

采用分子静力学方法模拟了〈100〉单晶铜纳米线的拉伸变形过程,研究了纳米线屈服的机理. 结果表明：1） 纳米线初始屈服通过部分位错随机激活的{111}〈112〉孪生实现,后继屈服通过{111}〈112〉部分位错滑移实现;2） 纳米线变形初期不同滑移面上的部分位错在两面交线处相遇形成压杆位错,变形后期部分位错在刚性边界处塞积,两者都阻碍位错滑移,引起一定的强化作用. 关键词： 纳米线 屈服 位错 分子静力学     

“Volume reflection” of high-energy charged particles in quasi-channeling states in bent crystals

Planar quasi-channeling of high-energy charged particles in bent crystal is considered. In the computer analysis of particle trajectories it is discovered that at a crystal bend far from the critical one quasi-channeled particles are deflected to the side opposite to the bend, i.e. a “volume reflection” of particles (positive and negative) by the field of bent atomic planes takes place.     

Atomically sharp 〈111〉 trihedral angle of a tungsten tip

The processes occuring in the course of heating of a tungsten tip in an electric field and resulting in the formation of the 〈111〉 trihedral angle at the intersection of three {011} closest packed planes in the crystal lattice of tungsten are investigated using field-emission microscopy, continuous-mode field-desorption microscopy, and high-temperature field evaporation microscopy. It is demonstrated that atomically sharp angles can be formed at temperatures above 2200 K in the absence of field evaporation. An atom forming the apex of the trihedral angle lies in the triangle of atoms arranged in the (111) plane. In the triangle, each atom is located at the intersection of the 〈111〉 close-packed atomic rows, which are the boundaries of the {011} planes forming the trihedral angle and the {112} planes forming the angle edges two rows in width.     

Orientation effects in interaction of screw dislocation with interstitial impurity atom in b.c.c. lattice

The cross-slip and pinning of a 1/2a〈111〉 screw dislocation in b.c.c. metals in the vicinity of an interstitial impurity atom are studied in dependence on crystal orientation. To this purpose, the interaction energy between the dislocation and an interstitial atom is calculated in an anisotropic elastic continuum and it is assumed that the screw dislocation moves microscopically on {112} or {110} planes between its stable configuration positions in b.c.c. lattice. It is found that the probability of induced cross-slip is orientation dependent. This result is used for discussion of orientation dependence of the change of CRSS due to increased carbon content which was experimentally determined for Fe-3.2% Si alloy single crystals in a previous paper (Blahovec J., Kade?ková S.: Czech. J. Phys.B 21 (1971), 846).