Fano resonance and wave transmission through a chain structure with an isolated ring composed of defects

We consider a discrete model that describes a linear chain of particles coupled to an isolated ring composed of N defects. This simple system can be regarded as a generalization of the familiar Fano-Anderson model. It can be used to model discrete networks of coupled defect modes in photonic crystals and simple waveguide arrays in two-dimensional lattices. The analytical result of the transmission coefficient is obtained, along with the conditions for perfect reflections and transmissions due to either destructive or constructive interferences. Using a simple example, we further investigate the relationship between the resonant frequencies and the number of defects N, and study how to affect the numbers of perfect reflections and transmissions. In addition, we demonstrate how these resonance transmissions and refections can be tuned by one nonlinear defect of the network that possesses a nonlinear Kerr-like response.     

Non-steady-state tunnelling recombination in insulating solids,controlled by defect diffusion and rotation

Abstract

The experimental data for KCl—Ag, KBr, NaCl—Ag and KCl—SO₄ crystals as well as Na₂O.3SiO₂—Tb³⁺ glass are summarized which demonstrate the delayed increase (decrease) of the intensity of the thermally stimulated tunnelling recombination of radiation defects after step-wise defrosting (frosting) of their mobility. Both theory and experiment presented here allow to distinguish the cases when the recombination kinetics is controlled by the rotation of an anisotropic defects or their diffusion respectively. It can be achieved studying the non-steady-state stages of kinetics. The effect of relative spatial defect distribution upon the kinetics under study is considered; it is argued that the {F, V _k } recombination in KBr occurs within spatially correlated pairs.     

Effect of microstructure on the coercivity of HDDR Nd-Fe-B permanent magnetic alloy

The effect of the grain boundary microstructure on the anisotropy and coercivity was investigated in an HDDR Nd-Fe-B permanent magnetic alloy. Considering the special microstructure of its magnetic powder grain, an anisotropic theoretical model influenced simultaneously by the structure defect at the grain boundary and the exchange coupling interaction was put forward. The variations of the structure defect factors based on the nucleation and pinning mechanism with 2r ₀/lex (where r ₀ and lex are the defect thickness and the length of exchange coupling, respectively) were calculated. The results show that the coercivity mechanism of an HDDR Nd-Fe-B permanent magnetic alloy is greatly related to its microstructure defect at the grain boundary. For a fixed lex, when 2r ₀/lex < 1.67, the coercivity is controlled by the pinning mechanism; when 2r ₀/lex > 1.67, it is determined by the nucleation mechanism. The coercivity reaches the maximum when 2r ₀/lex = 1.67. The calculation result is consistent well with the experimental result given by Morimoto et al. Supported by the National Natural Science Foundation of China (Grant No. 50671055)     

Photoluminescence spectroscopy of defects in ZnO nano/microwires

Photoluminescence spectroscopy is used to study defects found in single ZnO nano/microwires at 90 K. The defect, acting as binding site for bound exciton (BX) transition, is represented by BF, the fractional intensity of the BX peak in the whole near-band edge ultraviolet (UV) luminescence. The concentration of defects as origins of the visible emissions is proportional to the intensity fraction DF, i.e., the intensity fraction of visible emissions in the sum total of all UV and visible luminescences. By comparing BF and DF, it is concluded that the two defects are not correlated to each other. The former kind of defect is considered to be related to the blueshift of the near-band edge peak as the radius of the nano/microwires decreases at room temperature.     

Ionic conduction and effect of immobile cation substitution in binary system (AgI)4/5–(PbI2)1/5

Samples of stoichiometry (AgI)₄(PbI₂)_1?x (CdI₂) _x , (0 ≤ x ≤ 0.4), have been prepared and studied by electrical conductivity, X-ray powder diffraction and DSC techniques. The ionic conductivity of samples was found to increase with temperature, and an abrupt increase at phase transition temperature was observed. The Cd⁺²-doped samples exhibited lower phase transition temperature compared to that of the pure samples. The ionic conductivity decreases with an increase in Cd⁺² content in pre-transition, while enhances in conductivity result in Cd⁺² content samples of x ≤ 0.2 in the post-transition region. Different resources of investigation confirmed the solubility limit of Cd⁺² in the high-temperature phase to be x = 0.2. The change in the ionic conductivity of Cd⁺²-doped samples is explained by the increase in the defect concentration and the free volume available in the lattice. The drop in phase transition temperature of Cd²⁺-doped systems is attributed to the lattice distortion and the increase in the defect–defect interaction.     

Study of defect evolution by TEM with in situ ion irradiation and coordinated modeling

The paper describes a novel transmission electron microscopy (TEM) experiment with in situ ion irradiation designed to improve and validate a computer model. TEM thin foils of molybdenum were irradiated in situ by 1?MeV Kr ions up to ～0.045 displacements per atom (dpa) at 80°C at three dose rates ?5?×?10^?6, 5?×?10^?5, and 5?×?10^?4?dpa/s – at the Argonne IVEM-Tandem Facility. The low-dose experiments produced visible defect structure in dislocation loops, allowing accurate, quantitative measurements of defect number density and size distribution. Weak beam dark-field plane-view images were used to obtain defect density and size distribution as functions of foil thickness, dose, and dose rate. Diffraction contrast electron tomography was performed to image defect clusters through the foil thickness and measure their depth distribution. A spatially dependent cluster dynamic model was developed explicitly to model the damage by 1?MeV Kr ion irradiation in an Mo thin foil with temporal and spatial dependence of defect distribution. The set of quantitative data of visible defects was used to improve and validate the computer model. It was shown that the thin foil thickness is an important variable in determining the defect distribution. This additional spatial dimension allowed direct comparison between the model and experiments of defect structures. The defect loss to the surfaces in an irradiated thin foil was modeled successfully. TEM with in situ ion irradiation of Mo thin foils was also explicitly designed to compare with neutron irradiation data of the identical material that will be used to validate the model developed for thin foils.     

Defect engineering by synchrotron radiation X‐rays in CeO2 nanocrystals

This work reports an unconventional defect engineering approach using synchrotron‐radiation‐based X‐rays on ceria nanocrystal catalysts of particle sizes 4.4–10.6 nm. The generation of a large number of oxygen‐vacancy defects (OVDs), and therefore an effective reduction of cations, has been found in CeO₂ catalytic materials bombarded by high‐intensity synchrotron X‐ray beams of beam size 1.5 mm × 0.5 mm, photon energies of 5.5–7.8 keV and photon fluxes up to 1.53 × 10¹² photons s^?1. The experimentally observed cation reduction was theoretically explained by a first‐principles formation‐energy calculation for oxygen vacancy defects. The results clearly indicate that OVD formation is mainly a result of X‐ray‐excited core holes that give rise to valence holes through electron down conversion in the material. Thermal annealing and subvalent Y‐doping were also employed to modulate the efficiency of oxygen escape, providing extra control on the X‐ray‐induced OVD generating process. Both the core‐hole‐dominated bond breaking and oxygen escape mechanisms play pivotal roles for efficient OVD formation. This X‐ray irradiation approach, as an alternative defect engineering method, can be applied to a wide variety of nanostructured materials for physical‐property modification.     

Electrical properties of polycrystalline TiO<Subscript>2</Subscript>. Prolonged oxidation kinetics

The equilibration kinetics for polycrystalline TiO₂ was monitored during prolonged oxidation at 1,323 K and p(O₂)=75 kPa using the measurements of the electrical conductivity and thermoelectric power. The determined kinetic data indicate the presence of two kinetics regimes; the Regime I (rapid kinetics) and the Regime II (slow kinetics). The prolonged oxidation of TiO₂ is considered in terms of the formation of Ti vacancies at the surface and their subsequent transport into the bulk. This effect, also observed for TiO₂ single crystal, allows to obtain p-type TiO₂ without the incorporation of acceptor-type foreign ions into the TiO₂ lattice. This project was performed as part of the University of New South Wales Research and Development programme on solar-hydrogen.     

Polarization‐free directional coupling of surface plasmon polaritons

Surface plasmon polaritons (SPPs) have sparked enormous interest on nanophotonics beyond the diffraction limit for their remarkable capabilities of subwavelength confinements and strong enhancements. Due to the inherent polarization sensitivity of the SPPs [transverse‐magnetic (TM) polarization], it is a great challenge to couple the s‐polarized free‐space light to the SPPs. Here, an ultrasmall defect aperture (<λ²/2) is designed to directionally couple both the p‐ and s‐polarized incident beams to the single SPP mode in a broad bandwidth, which is guided by a subwavelength plasmonic waveguide. Simulations show that hot spots emerge at the sharp corners of the defect aperture when the incident beams illuminate it from the back side. The strong radiative fields from the hot spots are directionally coupled to the SPP mode because of the symmetry breaking of the defect aperture. By adjusting the structural parameters, both the unidirectional and bidirectional SPP coupling from the two orthogonal linear‐polarization incident beams are experimentally demonstrated. The polarization‐free coupling of the SPPs is of importance in circuits for fully optical processing of information with a deep‐subwavelength footprint.

     

Light‐induced degradation in indium‐doped silicon

Light‐induced degradation of charge carrier lifetime was observed in indium‐doped silicon. After defect formation, an annealing step at 200 °C for 10 min deactivates the defect and the initial charge carrier lifetime is fully recovered. The observed time range of the defect kinetics is similar to the well known defect kinetics of the light‐induced degradation in boron‐doped samples. Differences between defect formation in boron‐ and indium‐doped silicon are detected and discussed. A new model based on an acceptor self‐interstitial A_Si–Si_i defect is proposed and established with experimental findings and existing ab‐initio simulations.

     

The non-Arrhenius migration of interstitial defects in bcc transition metals

Thermally activated migration of defects drives microstructural evolution of materials under irradiation. In the case of vacancies, the activation energy for migration is many times the absolute temperature, and the dependence of the diffusion coefficient on temperature is well approximated by the Arrhenius law. On the other hand the activation energy for the migration of self-interstitial defects, and particularly self-interstitial atom clusters, is very low. In this case a trajectory of a defect performing Brownian motion at or above room temperature does not follow the Arrhenius-like pattern of migration involving infrequent hops separated by the relatively long intervals of time during which a defect resides at a certain point in the crystal lattice. This article reviews recent atomistic simulations of migration of individual interstitial defects, as well as clusters of interstitial defects, and rationalizes the results of simulations on the basis of solutions of the multistring Frenkel–Kontorova model. The treatment developed in the paper shows that the origin of the non-Arrhenius migration of interstitial defects and interstitial defect clusters is associated with the interaction between a defect and the classical field of thermal phonons. To cite this article: S.L. Dudarev, C. R. Physique 9 (2008).     

First-principles calculation of point-defective structures of B2-NiSc intermetallics

A pseudo-potential plane-wave method based on first principles was used to calculate the physical parameters of B2-NiSc intermetallics and the geometrical, energetic, and electronic structures of point defects. The possible types of point defects in B2-NiSc intermetallics were analyzed and predicted by comparing the formation enthalpy and formation energy for different kinds of point defect structures. The results show that Ni vacancy defects and Ni anti-position defects are the main point defects in the B2-NiSc intermetallics, and that these point defects emerge as double vacancy defects or double anti-position defects. When the double Ni atoms at Sc sites are in the first nearest neighborhood, the point defect structures are found to be the most stable. An analysis of the electronic structure of NiSc point defects shows that the Ni anti-position defect is more stable than the Sc vacancy defect in the Ni-rich alloy, and the Ni vacancy defect is more stable than the Sc anti-position defect in the Sc-rich alloy. These results are consistent with the energy calculation. Through analysis of C₁₁–C₁₂, G/B and Poisson's ratio, it was found that the Ni_Sc point defect has little effect on crystal plasticity, and that the V_Ni point defect improves crystal plasticity.     

Real‐time image‐content‐based beamline control for smart 4D X‐ray imaging

Real‐time processing of X‐ray image data acquired at synchrotron radiation facilities allows for smart high‐speed experiments. This includes workflows covering parameterized and image‐based feedback‐driven control up to the final storage of raw and processed data. Nevertheless, there is presently no system that supports an efficient construction of such experiment workflows in a scalable way. Thus, here an architecture based on a high‐level control system that manages low‐level data acquisition, data processing and device changes is described. This system is suitable for routine as well as prototypical experiments, and provides specialized building blocks to conduct four‐dimensional in situ, in vivo and operando tomography and laminography.     

Stochastic and Relaxation Processes in Argon by Measurements of Dynamic Breakdown Voltages

Statistically based measurements of breakdown voltages U _b and breakdown delay times td and their variations in transient regimes of establishment and relaxation of discharges are a convenient method to study stochastic processes of electrical breakdown of gases, as well as relaxation kinetics in afterglow. In this paper the measurements and statistical analysis of the dynamic breakdown voltages U _b for linearly rising (ramp) pulses in argon at 1.33 mbar and the rates of voltage rise k up to 800 V s ^–1 are presented. It was found that electrical breakdowns by linearly rising (ramp) pulses is an inhomogeneous Poisson process caused by primary and secondary ionization coefficients α , γ and electron yield Y variations on the voltage (time). The experimental breakdown voltage distributions were fitted by theoretical distributions by applying approximate analytical and numerical models. The afterglow kinetics in argon was studied based on the dependence of the initial electron yield on the relaxation time Y ₀ (τ ) derived from fitting of distributions. The space charge decay was explained by the surface recombination of nitrogen atoms present as impurities. The afterglow kinetics and the surface recombination coefficients on the gas tube and cathode were determined from a gas‐phase model. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

由单负材料组成的含有缺陷层的一维光子晶体结构中的缺陷模

用转移矩阵方法研究了由单负材料组成的含有缺陷层的一维光子晶体的透射特性.研究结果表明:当缺陷层存在时,会在原有光子晶体的禁带中出现缺陷模.缺陷模的位置随杂质层磁导率μ的增加从禁带的高频端向低频端移动;但随杂质层介电常数ε的增加却从禁带的低频端向高频端移动.利用该特性可以实现对光传播的动态调控. 关键词： 单负材料 光子晶体 缺陷模     

Identification and elimination of inductively coupled plasma-induced defects in AlxGa1 - xN/GaN heterostructures

By using temperature-dependent Hall,variable-frequency capacitance-voltage and cathodoluminescence (CL) measurements,the identification of inductively coupled plasma (ICP)-induced defect states around the Al x Ga 1-x N/GaN heterointerface and their elimination by subsequent annealing in Al x Ga 1-x N/GaN heterostructures are systematically investigated.The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed.The interface state density after the ICP-etching process is as high as 2.75×10 12 cm 2 ·eV 1.The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N 2 ambient.The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.     

Effect of gamma irradiation on X‐ray absorption and photoelectron spectroscopy of Nd‐doped phosphate glass

X‐ray absorption near‐edge structure (XANES) and X‐ray photoelectron spectroscopy (XPS) of Nd‐doped phosphate glasses have been studied before and after gamma irradiation. The intensity and the location of the white line peak of the L₃‐edge XANES of Nd are found to be dependent on the ratio O/Nd in the glass matrix. Gamma irradiation changes the elemental concentration of atoms in the glass matrix, which affects the peak intensity of the white line due to changes in the covalence of the chemical bonds with Nd atoms in the glass (structural changes). Sharpening of the Nd 3d_5/2 peak profile in XPS spectra indicates a deficiency of oxygen in the glasses after gamma irradiation, which is supported by energy‐dispersive X‐ray spectroscopy measurements. The ratio of non‐bridging oxygen to total oxygen in the glass after gamma radiation has been found to be correlated to the concentration of defects in the glass samples, which are responsible for its radiation resistance as well as for its coloration.     

基于布里渊区谱的二维光子晶格线性缺陷模式分析

结合均匀光子晶格的衍射关系和晶格中正负缺陷的布里渊区谱特性,探讨了光诱导二维光子晶格中线性缺陷模式的形成条件,对布里渊区中各点的缺陷模式进行了模拟分析,并得到了光子带隙结构中“嵌入点”X₁点的正、负缺陷模式.结果表明：对于二维缺陷,只有当衍射关系曲面中沿两个正交的横向波矢方向同时为正常（反常）衍射的区域才能存在正（负）缺陷模式;而对于一维缺陷,只要在一个横向波矢方向上存在正常（反常）衍射的区域就可以支持正（负）缺陷模式,因此在某些特殊点处,正和负的缺陷模式可以同时存在.X₁点正缺陷模式的存在预示着自聚焦非线性同样可以支持带内孤子.研究结果有助于对光子晶格中晶格孤子（特别是带内孤子）的理解和进一步研究. 关键词： 光诱导光子晶格 光子带隙 线性缺陷态