Low‐temperature synthesis and Raman scattering of Mn‐doped ZnO nanopowders

Nanocrystalline Mn‐doped zinc oxides Zn_1−xMn_xO (x = 0–0.10) were synthesized by the sol–gel technique at low temperature. The calcination temperature of the as‐prepared powder was found at 350 °C using differential thermal analysis. A thermogravimetric analysis showed that there is a mass loss in the as‐prepared powder till 350 °C and an almost constant mass till 800 °C. The X‐ray diffraction patterns of investigated nanopowders calcined at 350 °C correspond to the hexagonal ZnO structure without any foreign impurities. The average grain size of the nanocrystal that was observed around ∼25–40 nm from transmission electron microscopy matched well with the crystallite size calculated from the line shape of X‐ray diffraction. The chemical bonding structure in Zn_1−xMn_xO nanopowders was examined using X‐ray photoelectron spectroscopy techniques, which indicate substitution of Mn²⁺ ions into Zn²⁺ sites in ZnO lattice. Micro Raman spectroscopy confirmed the insertion of Mn ions in the ZnO host matrix, and similar wurtzite structure of Zn_1−xMn_xO (x < 10%) nanocrystals. Temperature‐dependent Raman spectra of the nanocrystals displayed suppression of luminescence and enhancement in full width at half maximum in pure ZnO nanocrystals with increase in temperature, which suggests an enhancement in particle size at elevated temperature. Copyright © 2009 John Wiley & Sons, Ltd.     

Identification of oxygen vacancy types from Raman spectra of SnO2 nanocrystals

Raman spectra acquired from spherical SnO₂ nanocrystals prepared by pulsed laser ablation and hydrothermal synthesis exhibit three oxygen‐vacancy‐related Raman modes at 234, 573, and 618 cm⁻¹. The peak location and intensity vary with annealing temperature under O₂ finally approaching those of bulk materials. Density functional calculation discloses that the three Raman modes stem from subbridging, in‐plane, and bridging oxygen vacancies, respectively. Raman spectra can thus be used to discern different types of oxygen vacancies in SnO₂ nanocrystals. Copyright © 2012 John Wiley & Sons, Ltd.     

Evidences of the evolution from solid solution to surface segregation in Ni‐doped SnO2 nanoparticles using Raman spectroscopy

Ni‐doped SnO₂ nanoparticles, promising for gas‐sensing applications, have been synthesized by a polymer precursor method. X‐ray diffraction (XRD) and transmission electron microscopy (TEM) data analyses indicate the exclusive formation of nanosized particles with rutile‐type phase (tetragonal SnO₂) for Ni contents below 10 mol%. The mean crystallite size shows a progressive reduction with the Ni content. Room‐temperature Raman spectra of Ni‐doped SnO₂ nanoparticles show the presence of Raman active modes and modes activated by size effects. From the evolution of the A_1g mode with the Ni content, a solubility limit at ∼2 mol% was estimated. Below that content, Raman results are consistent with the occurrence of solid solution (ss) and surface segregation (seg.) of Ni ions. Above ∼2 mol% Ni, the redshift of A_1g mode suggests that the surface segregation of Ni ions takes place. Disorder‐activated bands were determined and their integrated intensity evolution with the Ni content suggest that the solid‐solution regime favors the increase of disorder; meanwhile, that disorder becomes weaker as the Ni content is increased. Copyright © 2010 John Wiley & Sons, Ltd.     

Micro‐Raman investigation of tin dioxide nanostructured material based on annealing effect

Rutile‐structured nanocrystalline tin dioxide (SnO₂) powder was synthesized by the chemical precipitation method using the precursor SnCl₂• 5H₂O. The SnO₂ powder was annealed at different temperatures, namely, 600, 800 and 1000 °C. Micro‐Raman spectra were recorded for both the as‐grown and annealed SnO₂ nanocrystalline samples. Micro‐Raman spectral measurements on the SnO₂ nanoparticle show the first‐order Raman modes A_1g (633 cm⁻¹), E_1g (475 cm⁻¹) and B_2g (775 cm⁻¹), indicating that the grown SnO₂ belongs to the rutile structure. The first‐order A_1g mode is observed as an intense band, whereas the other two modes show low intensity. The full width at half‐maximum and band area of the Raman lines of SnO₂ nanoparticle annealed at various temperatures were calculated. The effect of high‐temperature annealing on the vibrational modes of SnO₂ was studied. The optical image of SnO₂ nanocrystalline material was used to understand the surface morphology effect. Copyright © 2011 John Wiley & Sons, Ltd.     

Size-dependent luminescence of Sm3+ doped SnO2 nano-particles dispersed in sol-gel silica glass

Sol-gel glasses with composition (100?x)SiO₂–xSnO₂ doped with 0.4 mol% of Sm³⁺, with x ranging from 1 to 10, have been successfully synthesized. Transparent doped nano-glass-ceramics were prepared by thermal treatment of the precursor glasses at 900°C during 4 hours, leading to nanocomposites comprising SnO₂ nanocrystals embedded into an amorphous SiO₂ phase. A structural analysis in terms of X-ray Diffraction and High Resolution Transmission Electron Microscopy confirms the precipitation of SnO₂ nanocrystals within the glassy matrix. The mean radius of the obtained SnO₂ nanocrystals, ranging from 2.1 to 4.7 nm calculated by the Scherrer and Brus equations, similar to the Bohr’s exciton radius, constitutes a wide band-gap semiconductor quantum-dot system. Energy transfer from SnO₂ nanocrystal host to Sm³⁺ ions is confirmed by luminescence spectra and analyzed as a function of SnO₂ concentration, showing an evolution that could be ascribed to selective excitation of nanocrystal sets with predetermined size. Besides, a study of the luminescence as a function of temperature helps to clarify the involved energy transfer mechanisms.     

Raman and IR studies of BaBi2Ta2O9 prepared by a sol–gel process

The formation of ferroelectric BaBi₂Ta₂O₉ (BBT) by a sol–gel process was studied by X‐ray, Raman and infrared (IR) spectroscopy. Our results show that the formation of a Bi‐layered phase proceeds via an intermediate fluorite‐type phase. This method allows obtaining a BBT phase already at 750 °C. This temperature is about 150–200 °C lower than that required in the conventional solid‐state reaction. Therefore, a material with smaller particle size can be obtained. Raman and IR studies of the obtained Bi‐layered phase show that phonon properties of the synthesized particles are slightly different from those of the bulk material due to the size effect, defects and weak changes in local order. Temperature dependence of Raman and IR wavenumbers is consistent with the orthorhombic distortion of the BBT structure. Copyright © 2011 John Wiley & Sons, Ltd.     

Study of the structural phase transformation,and optical behavior of the as synthesized ZnO–SnO2–TiO2 nanocomposite

Bulk nanocomposites ZnO–SnO₂–TiO₂ were synthesized by solid-state reaction method. The X-ray diffraction patterns and Raman spectra of bulk nanocomposite as a function of sintering temperature (700 °C–1300 °C) indicate that the structural phases of SnO₂ and TiO₂ depend on the sintering temperature while the ZnO retains its hexagonal wurtzite phase at all sintering temperatures and SnO₂ started to transform into SnO at 900 °C and completely converted into SnO at 1100 °C, whereas the titanium dioxide (TiO₂) exhibits its most stable phase such as rutile at low sintering temperature (≤900°C) and it transforms partially into brookite phase at high sintering temperature (≥ 900 °C). The optical band gap of nanocomposite ZnO–SnO₂–TiO₂ sintered at 700 °C, 900 °C, 1100 °C and 1300 °C for 16 hours is calculated using the transformed diffuse reflectance ultra violet visible near infra red (UV–VisNIR) spectra and has been found to be 3.28, 3.29, 3.31 and 3.32 eV, respectively.     

Oxygen vacancy‐induced microstructural changes of annealed CeO2−x nanocrystals

Nanocrystalline ceria (CeO₂) is known for its ionic conductivity and oxygen storage properties, which depend on the presence of oxygen ion vacancies. The vacancies cause several important changes in CeO₂ involving microstrain, electronic structure, magnetic properties, etc. In this article, we focus our attention to the microstructural changes of nanocrystalline CeO_2−x annealed at different temperatures in the range 200–500 °C. Structural and vibrational properties were investigated by X‐ray diffraction and Raman spectroscopy. It was observed that the content of oxygen vacancies changed significantly with increasing annealing temperature, which plays an important role in the observed microstructural changes of the annealed samples. We demonstrate that the observed microstrain changes, because of variable defect content, dominate over the crystallite size effect. This finding is opposite to the conclusions made by several other authors. A new mode, classified as a probable surface mode, was observed in the Raman spectra at ∼480 cm⁻¹, the appearance of which can be explained by the large defective structure and disorder in the ceria lattice. Copyright © 2011 John Wiley & Sons, Ltd.     

XANES and XPS studies of processes initiated by high-vacuum annealing in SnO x /MWCNT composite layers

The initial and thermally treated composites based on SnO _x /MWCNT have been studied by the XANES and XPS methods using the equipment of the BESSY II Russian-German beamline of synchrotron radiation and by the AES and HRTEM methods. The characteristic mechanisms of chemical and structural transformations in the SnO _x phase have been determined depending on the vacuum annealing temperature. It has been found that the basic process in the metal-oxide component at annealing temperatures not exceeding 500°C is the tin monoxide SnO disproportionation reaction with the formation of the dioxide SnO₂ phase and metallic tin. An increase in the annealing temperature to 800°C results in the activation of carbothermal reduction of metallic tin in contact areas of oxide clusters and MWCNT, as well as in the formation of nanocrystalline structures in the metal-oxide component of composite.     

Phonon–phonon interactions in Ce0.85Gd0.15O2−δ nanocrystals studied by Raman spectroscopy

Phonon–phonon interactions and phase stability of Gd‐doped ceria nanocrystals were examined over the temperature range 293–1100 K by Raman spectroscopy. The phonon confinement model (PCM) based on size, inhomogeneous strain and anharmonic effects was used to properly describe the anharmonic interactions in this system. The interplay between size and anharmonic effects influenced different phonon decay channels in nano grains than in larger grains. After the gradual cooling down to room temperature (RT), the Raman study revealed the phase separation in this system pointing to the phase instability of Ce_0.85Gd_0.15O_2−δ nanocrystals after heat treatment. The concentration of extrinsic (intrinsic) oxygen vacancies was also studied by Raman spectroscopy during the heat treatment of the Ce_0.85Gd_0.15O_2−δ nanocrystalline sample. Copyright © 2009 John Wiley & Sons, Ltd.     

Micro‐Raman and photoluminescence analysis of composite vanadium oxide/poly‐vinyl acetate fibres synthesised by electro‐spinning

Composite vanadium oxide (VO_x)‐based fibres were synthesised by the electro‐spinning method combined with conventional sol–gel processing using polyvinyl acetate (PVAc) as a polymeric binder and vanadium oxytriisopropoxide as a vanadium oxide precursor. The microstructure and composition of as‐spun and calcined (300–500 °C) VO_x–PVAc fibres were systematically investigated by scanning electron microscopy, thermogravimetry, reflectance infrared Fourier transform, micro‐Raman spectroscopy and photoluminescence in view of their possible use in gas sensor fabrication. The comparative discussion of the characterization results indicates that V₂O₅–PVAc fibres are obtained. Calcination gradually removes PVAc and promotes structural rearrangement with consequent fibre‐morphology changes. With increasing calcination temperature, the crystallinity degree of V₂O₅ improves and a more oxygen‐deficient substoichiometric surface layer forms. Calcination at 400 °C preserves the fibre integrity. Indeed, fibres calcined at this temperature appear as the most suitable ones for use as the active layer in gas‐sensing devices. Copyright © 2011 John Wiley & Sons, Ltd.     

Sunlight assisted photodegradation by tin oxide quantum dots

Rutile phase of SnO₂ quantum dots of average size of 2.5 nm were synthesized at a growth temperature of 70 °C and characterized with XRD, TEM, FTIR and Raman analysis. The effective strain within the lattice of SnO₂ quantum dots was calculated by Williamson–Hall method. The broad peaks in XRD as well as Raman spectra and the presence of Raman bands at 569 and 432 cm⁻¹ are due to lower crystallinity of nanoparticles. The optical band gap of SnO₂ quantum dots was increased to 3.75 eV attributed to the quantum size effect. SnO₂ quantum dots were annealed in air atmosphere and the crystallite size of the particles increased with annealing temperature. Sunlight assisted photodegration property of SnO₂ quantum dots was investigated with vanillin as a model system and it shows the photodegradation efficiency of 87%. The photoluminescence and photodegradation efficiency of nanocrystallite SnO₂ decreases with increase of crystallite size contributed to the reduction in population of defects and surface area.     

Raman spectroscopy of sol–gel derived titanium oxide thin films

Raman spectra of TiO₂ films prepared via the sol–gel process were studied by UV and visible Raman spectroscopy. The evolution of the phases of TiO₂ films during annealing was investigated, and the relative intensities of the Raman bands excited with 325 nm were found to be distinct from those of the bands excited with 514 nm. The transmittance and FTIR spectra of the films annealed at different temperatures were characterized. The crystallization process of the powders and thin films treated by different annealing methods were also studied with Raman spectroscopy. The results show that the change in the relative intensities is caused by the resonance Raman effect. The anatase to rutile transition of the powder occurs at 700 °C, while that of the thin film occurs at 800 °C. The analysis of Raman band shape (peak position and full width at half‐maximum) after conventional furnace annealing and rapid thermal annealing indicates the influence of the non‐stoichiometry and phonon confinement effect. Copyright © 2011 John Wiley & Sons, Ltd.     

In‐situ Raman spectroscopy study of Ru/TiO2 catalyst in the selective methanation of CO

Raman spectroscopic technique has been used to characterize a Ru/TiO₂ catalyst and to follow in situ their structural changes during the CO selective methanation reaction (S‐MET). For a better comprehension of the catalytic mechanism, the in‐situ Raman study of the catalysts activation (reduction) process, the isolated CO and CO₂ methanation reactions and the effect of the composition of the reactive stream (H₂O and CO₂ presence) have been carried out. Raman spectroscopy evidences that the catalyst is composed by islands of TiO₂–RuO₂ solid solutions, constituting Ru–TiO₂ interphases in the form of Ru_xTi_{1 − x}O₂ rutile type solid solutions. The activation procedure with H₂ at 300 °C promotes the reduction of the RuO₂–TiO₂ islands generating Ru^o–Ti³⁺ centers. The spectroscopic changes are in agreement with the strong increase in chemical reactivity as increasing the carbonaceous intermediates observed. The selective methanation of CO proceeds after their adsorption on these Ru^o–Ti³⁺ active centers and subsequent C―O dissociation throughout the formation of CH_x/C_nH_x/C_nH_xO/CH_x―CO species. These intermediates are transformed into CH₄ by a combination of hydrogenation reactions. The formation of carbonaceous species during the methanation of CO and CO₂ suggests that the CO presence is required to promote the CO₂ methanation. Similar carbonaceous species are detected when the selective CO methanation is carried out with water in the stream. However, the activation of the catalysts occurs at much lower temperatures, and the carbon oxidation is favored by the oxidative effect of water. Copyright © 2015 John Wiley & Sons, Ltd.     

Synthesis of nanocrystalline SnO<Subscript>2</Subscript> in supercritical water

Nanocrystalline SnO₂ was synthesized in supercritical water at 385–415°C and 30 MPa (38–106 s residence time) in a tubular flow reactor from an aqueous solution of 0.1–0.4 M SnCl₄. The conversion rate was between 53 and 81%, but increased to 97.8% when 0.1 M NaOH was added. Nanoparticles were analyzed by a series of independent analytical techniques, including TEM, Raman, XRD, SEM, EDX and FT-IR. The initial size of the particles was about 3.7 nm. After calcination at 450°C for 2 h, the particle size increased to 4 nm. The particles were of low crystallinity, as indicated by the weak Raman and XRD signals. All particles were composed of Sn and O, as verified by the EDX spectra. The crystals were tetragonal, as confirmed by the weak XRD spectrum. After calcination at 600°C for 10 h, the particle size increased to 9 nm, while high crystallinity was confirmed by Raman and XRD analyses. All the crystals had the same structure, as indicated by TEM electron diffraction patterns. Using this one-step supercritical water process, nanoparticles of SnO₂ can be conveniently produced continuously in a flow reactor in less than 2 min.     

Vibrational Raman spectra of CdSx Se1‐x magic‐size nanocrystals

Resonant Raman scattering spectra of ultrasmall (<2 nm) magic‐size nanocrystals (NCs) are reported. The spectra of CdS and CdS_x Se_1‐x NCs, resonantly excited with 325 nm and 442 nm laser lines, correspondingly, reveal broad features in the range of bulk optical phonons. The relatively large width, ～50 cm^‐1, and downward shift, ～20 cm^‐1, of the Raman bands with respect to the longitudinal optical phonon in bulk crystals and large NCs are discussed based on the breaking of the translational symmetry and bond distortion in these ultrasmall NCs. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix

We investigate the structural and optical properties of GeO/SiO₂ multilayers obtained by evaporation of GeO₂ and SiO₂ powders under ultrahigh vacuum conditions on Si(001) substrates. Both Raman and infrared absorption spectroscopy measurements indicate the formation of GeSi nanocrystals after postgrowth annealing at 800°C. High-resolution transmission electron microscopy characterizations show that the average size of the nanocrystals is about 5 nm. For samples containing GeSi nanocrystals, photoluminescence is observed at 14 K in the spectral range 1500–1600 nm. The temperature dependence of the photoluminescence is studied.     

In situ confocal micro‐Raman spectroscopic investigation of rearrangement kinetics and phase evolution of UHMWPE during annealing

Ultrahigh molecular weight polyethylene was investigated using in situ confocal micro‐Raman spectroscopy during annealing at 110.0 °C. Based on the Raman spectra, crystalline, amorphous, and all‐trans noncrystalline fractions were recognized to evaluate rearrangement kinetics during isothermal annealing at 110.0 °C and phase evolution during cooling from 110.0 to 30.0 °C. For the crystalline fraction, a substantial increase from 0.600 ± 0.001 to 0.639 ± 0.008 was observed during the first 24.2 min of annealing; a very gradual increase from 0.639 ± 0.001 to 0.679 ± 0.001 occurred during the following 114.6 min. For the amorphous phase fraction, conversely, a sharp decrease from 0.240 ± 0.000 to 0.213 ± 0.004 was exhibited during the first 24.2 min of annealing, and then, a flat decrease happened from 0.213 ± 0.004 to 0.192 ± 0.001 as time expanded to 138.8 min. For the all‐tans noncrystalline fraction, a gradual decrease was shown from 0.160 ± 0.000 at 0.0 min to 0.128 ± 0.001 at 138.8 min. The rearrangement rate constant K was obtained to be 0.632 by an Avrami equation. During cooling from 110.0 to 30.0 °C, there were two phase evolution regions: region 1 from 110.0 to 90.0 °C and region 2 from 90.0 to 30.0 °C. The crystal lamella thickened faster in region 1 than in region 2. The amorphous layer continually decreased in content in the combined region of 1 and 2. The all‐trans noncrystalline phase obviously decreased in region 1 and then almost maintained a constant level in region 2. Copyright © 2014 John Wiley & Sons, Ltd.     

Raman spectral studies of Zr4+‐rich BaZrxTi1−xO3(0.5⩽x⩽1.00) phase diagram

This paper reports a systematic study of the composition and the temperature‐dependent‐Raman spectra of Zr⁴⁺‐rich BaZr_xTi_1−xO₃ (BZT) ceramic compositions (0.50⩽x⩽1.00). On the basis of the dielectric behavior of Zr rich BZT ceramics, the observed relaxor behavior has been hypothesized as a result of increasing long‐range interactions of nanosized, Ti⁴⁺‐rich polar regions in a Zr⁴⁺‐rich nonpolar matrix. Beyond an optimum concentration of BaTiO₃ (BT) in the nonpolar matrix of BaZrO₃ (x⩽0.75), a critical size and density of the polar regions is reached when the polar clusters start showing the relaxor like behavior, which finally show classical relaxor behavior for compositions with x = 0.5 and 0.6. This hypothesis is strongly supported from the Raman data on Zr‐rich BZT presented in this paper. Well‐defined BT Raman spectra for 5% BT in BZT composition were recorded, which followed completely up to the 50% Ti addition in the BZT samples. The temperature‐dependent Raman spectra collected on the BZT ceramics far beyond the dielectric transition temperatures supported the existence of the nano‐polar BT regions, like in typical relaxor samples. The full width at half‐maximum (FWHM), integrated intensity of the peaks in the Raman spectra has been analyzed to further support the conclusions. Copyright © 2008 John Wiley & Sons, Ltd.     

Synthesis of tin oxides SnO2–x in the entire composition range (x = 0 to 1) by ion‐beam sputter‐deposition

Ion‐beam sputter‐deposition (IBSD) was used to reactively deposit tin oxide crystalline films at oxygen fluxes of 3–15 sccm and at substrate temperatures of 100–600 °C. Analysing the samples by X‐ray diffraction and Raman spectro‐ scopy yields a map of the crystalline structures in dependence on the growth parameters. In addition to SnO₂, pure SnO films of high quality and an intermediate phase such as Sn₂O₃ or Sn₃O₄ can be reproducibly obtained. Thus, IBSD is, to our knowledge, the only thin‐film deposition technique verified yet to reliably produce samples in the entire composition range of tin oxides. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)