Weak-link bi-epitaxial Josephson junctions in a YBa2Cu3O7−δ film on BaZrO3/CeO2/SrTiO3

A bi-epitaxial (001)YBa₂Cu₃O_7−δ /(110)BaZrO₃/(001)CeO₂ three-layer heterostructure has been grown on (100)SrTiO₃ by laser ablation. The epitaxial relations between the layers making up the heterostructure were derived from x-ray diffraction data. The I _cR_n product for the bi-epitaxial Josephson junctions thus obtained was within 1–1.5 mV for 4.2 K, and 30–60 μV for 77 K. The normal resistance R _n=(2–5 Ω) was practically independent of temperature. The magnetic field dependences of I _c had typically a clearly pronounced main maximum, followed by distorted subsequent peaks. Interaction of the Josephson ac current with self-induced electromagnetic waves at the 45° grain boundary and with external microwave radiation (f=11 GHz) produced current steps in the I-V characteristics of the bi-epitaxial junctions at the corresponding voltages. Fiz. Tverd. Tela (St. Petersburg) 39, 1732–1738 (October 1997)     

Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures

The electroluminescent characteristics of an InGaAsSb/GaAlAsSb heterostructure LED emitting at 1.85 μm are studied in the temperature range 20–200°C. It is shown that the emission power exponentially drops as P ≅ 0.4exp(2.05 × 10³/T) with a rise in temperature primarily because of an increase in the Auger recombination rate. It is found that band-to-band radiative recombination goes in parallel with recombination through acceptor levels, the latter causing the emission spectrum to broaden. With a rise in temperature, the activation energy of the acceptor levels decreases by the law ΔE≅ 32.9 − 0.075T and the maximum of the LED’s emission spectrum shifts toward the long-wavelength range (hν _max = 0.693 − 4.497 × 10⁻⁴ T). Based on the dependence E _g = hν _max − 0.5kT and experimental data, an expression is derived for the temperature variation of the bandgap in the In_0.055Ga_0.945AsSb active area, E _g ≅ 0.817 − 4.951 × 10⁻⁴ T, in the range 290 K < T < 495 K. The resistance of the heterostructure decreases exponentially with rising temperature as R ₀ ≅ 5.52 × 10⁻²exp(0.672/2kT), while cutoff voltage U _cut characterizing the barrier height of a p−n junction decreases linearly with increasing temperature (U _cut = −1.59T + 534). It is found that the current through the heterostructure is due to the generation-recombination mechanism throughout the temperature interval.     

Electrical switching in the MoO<Subscript>3</Subscript>–WO<Subscript>3</Subscript>–P<Subscript>2</Subscript>O<Subscript>5</Subscript> and MoO<Subscript>3</Subscript>–P<Subscript>2</Subscript>O<Subscript>5</Subscript> glasses

High field electrical switching on blown films of MoO₃(60%)–P₂O₅(40%), MoO₃(50%)–WO₃(10%)–P₂O₅(40%), and MoO₃(45%)–WO₃(15%)–P₂O₅(40%) having different thicknesses was studied and compared. Switching was observed using two terminal samples. S-type current–voltage characteristic (current-controlled negative resistance—CCNR) with memory was observed in molybdenum–phosphate glasses, but N-type characteristic (voltage-controlled negative resistance—VCNR) with threshold in tungsten–molybdenum–phosphate glasses was observed. The important observation was that with the addition of WO₃ to binary MoO₃–P₂O5 led to a change of I–V characteristic from CCNR with memory to VCNR with threshold. The measurements of density and molar volume showed linear relation between MoO₃ content and density which decreased with the increase of MoO₃ content. The samples’ thickness had no significant effect on threshold voltage. The attained results also indicated that the electrode material had no effect on switching property of devices. The switching behavior of the devices did not show any dependence on the polarity of the applied voltage. In terms of the effect of heat on the switching behavior of molybdenum–phosphate glasses, it was found that threshold voltage decreases with increasing of temperature. Finally, the switching phenomenon was explained by thermal (formation of crystalline filaments) and electronic models.     

Carrier mobility in nonstoichiometric n-Bi2Te3−x Sex solid solutions

A study has been made of the thermoelectric and galvanomagnetic properties of n-Bi₂Te_3−x Se_x solid solutions (x=0.3 and 0.36) in the temperature range 80–300 K. The lowest carrier concentrations, (0.8–1)×10¹⁸ cm⁻³, were obtained by displacing the solid solution from the stoichiometric to a Te-rich composition. At such carrier concentrations, the second subband in the conduction band of n-Bi₂Te_3−x Se_x is not filled, which results in a growth of mobility because of the absence of interband scattering, and brings about an increase of thermoelectric efficiency in the 80–120-K range. Fiz. Tverd. Tela (St. Petersburg) 39, 483–487 (March 1997)     

Spectral-luminescent properties of condensation products of 8-aminoquinoline,aromatic aldehydes,and dimedone

Hydrobenzophenanthrolinone derivatives were synthesized by three-component condensation of 8-aminoquinoline, aromatic aldehydes, and dimedone. The structures of the obtained substances were confirmed by NMR and IR spectroscopy and mass spectrometry. Spectral-luminescent investigations of the synthesized compounds showed that they were characterized by high oscillator strengths for allowed electronic transitions S _n ← S ₀ (n = 1–3). Low fluorescence quantum yields in EtOH (Φ_fl ~ 10^–4–10^–3) and an increase of the Φfl values in toluene (~10^–2) at room temperature and with lowering the temperature to 77 K (Φ_fl ~ 10^–1) for a number of the compounds under study were satisfactorily explained within the framework of Marcus theory.     

Preparation of epitaxial orthorhombic YMnO<Subscript>3</Subscript> thin films and the current–voltage rectifying effect

Epitaxial orthorhombic YMnO₃(YMO) thin films on (001) Nb:SrTiO₃(NSTO) substrates were prepared by pulsed laser deposition. The weak ferromagnetism at low temperature, probably ascribed to the stretched Mn-spin configuration along [010] direction, was identified. The dielectric anomaly at the spin–glass freezing point indicates clearly a spin–phonon (magnetoelectric) coupling which can be modulated by electric field. The as-prepared YMO/NSTO heterostructure exhibits significant current–voltage (I–V) rectifying effect over a broad temperature range.     

Multilevel resistance switching of Ag/Nb-doped SrTiO<Subscript>3</Subscript>/Ti structure

Rectifying and photovoltaic properties of a La_0.7Sr_0.3CoO_3−σ /Si heterostructure have been experimentally studied. The heterostructure exhibits a rectifying behavior, similar to that of the traditional diode. A photovoltaic effect is observed when the heterostructure is exposed to the laser with a wavelength of 532 nm and a power of 6 mW/mm². It is interesting to note that the peak photovoltages initially increase with decreasing temperature, followed by a decrease at T<220 K. This reveals that the photovoltaic effect can be modulated by the intrinsic properties of the La_0.7Sr_0.3CoO_3−σ layer.     

Ferroelectric and phase transition studies in cesium nitrate: poly(vinyl?alcohol)?composite films

The composite films of cesium nitrate (CsNO₃) and poly(vinyl alcohol) (PVA) with varying composition were prepared using the solvent cast method. The hysteresis loop characteristics show optimum remnant polarization (P _r ) of 2.75 μC/cm² at 50 wt.% composition. The field emission scanning electron microscope images show a nearly homogeneous distribution of CsNO₃ grains in the 50 wt.% composite film. The temperature dependence of the remnant polarization shows a diffused transition temperature range from the ferroelectric to the paraelectric phase and this has been attributed to the reduced enthalpy. The butterfly features of the dielectric constant–voltage (ε–V) characteristics have been attributed to polarization switching.     

Investigation of temperature-dependent electrical properties of p-VOPc/n-si heterojunction under dark conditions

An organic/inorganic heterojunction p-VOPc/n-Si was fabricated and its electrical properties were investigated. Temperature-dependent dark current–voltage (I–V) characteristics of the heterojunction exhibited rectification behaviour with a rectification ratio of 405 at ±1 V and room temperature. The current–voltage characteristics of the cell showed ohmic conduction at low voltages followed by a space charge-limited current (SCLC) conduction dominated by an exponential trap distribution at higher voltages. At room temperature, the series and shunt resistances were found to be approximately 1.4 and 100 kΩ, respectively. Diode ideality factor n was found to be 3.2 at room temperature and dropped to 1.9 at 363 K. Room temperature mobility of vanadyl phthalocyanine (VOPc) was extracted from the I–V characteristics in the SCLC region and was found approximately 15.5 × 10⁻³ cm² V⁻¹ s⁻¹. The effective barrier height, Ф_B, was estimated as 0.77 eV. The effect of temperature, on various heterojunction parameters was recorded under dark conditions and at temperatures ranging from 300 to 363 K.     

Formation of Schottky-type metal/SrTiO3 junctions and their resistive properties

Motivated by the successful use of strontium titanate with different doping metals for memory cells on the basis of resistive switching and the recent findings on the major importance of oxygen vacancy redistribution in this compound, the present work shows the possibility of a non-volatile resistance change memory based on vacancy-doped SrTiO₃. The formation of corresponding metal/SrTiO_3−δ junctions (δ>0) in an electric field will be discussed as well as the switching between ohmic and Schottky-type contact behavior. A notable hysteresis in the current–voltage characteristics is used to carry out Write, Read, and Erase operations exemplifying the memory cell properties of such junctions. But whereas the electric field-induced formation of Schottky-type junctions is explainable by oxygen vacancy redistribution, the resistive switching needs to be discussed in terms of vacancies serving as electron trap states at the metal/oxide interface.     

Resistance switching properties of In2O3 nanocrystals memory device with organic and inorganic hybrid structure

A memory device with In₂O₃ nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine (BPDA-PDA) polyimide layer on a ZnO layer was fabricated, and its electrical properties were evaluated. Then, the transmittance efficiency in the structure of the BPDA-PDA polyimide/In₂O₃ nanocrystals/ZnO/ITO/double polishing sapphire substrate was measured to be about 80% between 440 to 800 nm by ultraviolet-visible transmittance spectroscopy. A bipolar switching current bistability by difference resistance appeared in the sweep voltage rage from −7 to 7 V. It was considered that the bipolar behavior of current-voltage may originate from a resistance fluctuation because of the electron charging effect in In₂O₃ nanocrystals by voltage sweeping, Fowler–Nordheim tunneling, space-charge-limited current, and the migration of O²⁻ ions.     

Giant dielectric relaxation in SrTiO3-SrMg1/3Nb2/3O3 and SrTiO3-SrSc1/2Ta1/2O3 solid solutions

Ceramic samples of (1−x)SrTiO₃-xSrMg_1/3Nb_2/3O₃ and (1−x)SrTiO₃-xSrSc_1/2Ta_1/2O₃ were prepared, and their dielectric properties were studied at x=0.005–0.15 and 0.01–0.1, respectively, at frequencies 10 Hz–1 MHz and at temperatures 4.2–350 K. A giant dielectric relaxation was observed in the temperature range 150–300 K, and not so strong but well-developed relaxation was found in the temperature range 20–90 K. The activation energy U and the relaxation time τ₀ were determined to be 0.21–0.3 eV and from 10⁻¹¹ to 10⁻¹² s for the high-temperature relaxation and 0.01–0.02 eV and 10⁻⁸–10⁻¹⁰ s for the low-temperature relaxation, respectively. The additional local charge compensation of the heterovalent impurities Mg²⁺ and Nb⁵⁺ (or Sc³⁺ and Ta⁵⁺) by free charge carriers or the host ion vacancies is suggested to be the underlying physical mechanism of the relaxation phenomena. On the basis of this mechanism, the Maxwell-Wagner model and the model of reorienting dipole centers Mg²⁺ (or Sc³⁺) associated with the oxygen vacancy are proposed to explain the high-temperature relaxation with some arguments in favor of the latter model. The polaron-like model with the Nb⁵⁺-Ti³⁺ center is suggested as the origin of the low-temperature relaxation. The reasons for the absence of ferroelectric phase transitions in the solid solutions under study are also discussed. From Fizika Tverdogo Tela, Vol. 44, No. 11, 2002, pp. 1948–1957. Original English Text Copyright ? 2002 by Lemanov, Sotnikov, Smirnova, Weihnacht. This article was submitted by the authors in English.     

Field dependence of spin-lattice relaxation of Nd3+ ions in Y3Al5O12 crystals

Our studies involve measuring spin-lattice relaxation times for Nd³⁺ ions in yttrium-aluminum garnets over the temperature range 4–50 K at 9.25 and 36.4 GHz for different orientations of the external magnetic field in relation to the crystallographic axes. The temperature dependence of the relaxation rate is described by T ₁ ⁻¹ =AT ⁿ+b exp(−Δ/kT), where n varies from sample to sample, with n=1 for “perfect” samples (i.e., with the longest relaxation times). Here Δ is approximately 130 cm⁻¹, which is the energy of the excited Kramers doublet of the neodymium ion closest to the ground state, and this makes it possible to interpret the second term in T ₁ ⁻¹ as the contribution of two-stage relaxation proceeding through the intermediate level Δ. A strong field dependence of these processes has been discovered: when the frequency was increased fourfold, the relaxation rate increased by a factor of 10. The effect is a specific manifestation of the degeneracy of the excited level, breaking of the symmetry of the crystalline field due to lattice defects, and the prevalence of deformations of a certain type in the spin-lattice interaction. Zh. éksp. Teor. Fiz. 111, 332–343 (January 1997)     

Spontaneous photorefractive effect in Sr1−x CaxTiO3 (x=0.014)

The temperature dependence of the principal values of the refractive index in Sr_1−x Ca_xTiO₃ (x=0.014) has been measured in the 17–275 K range under various conditions of sample illumination with 1.96 eV photons. The spontaneous photorefractive contribution δn ^ph to the temperature-induced variation of the refractive index of Sr_1−x Ca_xTiO₃, which appears after illumination of the sample in the ferrophase (transition temperature T _c=32 K) and persists in the paraphase under heating up to 150 K, has been separated. The photoinduced polarization has been estimated. Fiz. Tverd. Tela (St. Petersburg) 39, 711–713 (April 1997)     

Infrared-to-visible up-conversion emissions and thermometric applications of Er 3+-doped Al 2 O 3

Er³⁺-doped Al₂O₃ has been prepared by a sol–gel method, using aluminium isopropoxide [Al(OC₃H₇)₃]-derived Al₂O₃ sols with addition of erbium nitrate [Er(NO₃)₃·5H₂O]. The phase structure of θ-(Al,Er)₂O₃ phase was obtained for the 0.1 mol. % Er³⁺-doped Al₂O₃ at the sintering temperature of 1273 K. The green and red up-conversion emissions centered at about 523, 545 and 660 nm, corresponding respectively to the ² H _11/2, ⁴ S _3/2→⁴ I _15/2 and ⁴ F _9/2→⁴ I _15/2 transitions of Er³⁺, were detected by a 978-nm semiconductor laser diode excitation. The temperature dependence of green up-conversion emissions was studied over a wide temperature range of 295–725 K, and reasonable agreement between the calculated temperatures obtained by the fluorescence intensity ratio theory and the measured temperature was obtained, which proved that Er³⁺-doped Al₂O₃ has a good potential for the development of high-temperature sensors. It has some advantages compared to glasses due to its higher thermal and mechanical resistance and allows measurements in a large temperature range. PACS 78.55.Hx; 81.40.Tv     

Inherent diode isolation in programmable metallization cell resistive memory elements

The feasibility of a storage element with inherent rectifying or isolation properties for use in passive memory arrays has been demonstrated using a programmable metallization cell structure with a doped (n-type) silicon electrode. The Cu/Cu–SiO₂/n-Si cell used in this study switches via the formation of a nanoscale Cu filament in the Cu–SiO₂ film which results in the creation of a Cu/n-Si Schottky contact with soft reverse breakdown characteristics. The reverse bias leakage current in the on-state diode is dependent on the programming current employed as this influences the area of the electrodeposit and hence the area of the Cu/n-Si junction. The programming current also controls the on-state resistance of the device, allowing multi-level cell (MLC) operation, in which discrete resistance levels are used to represent multiple logical bits in each physical cell. The Cu/Cu–SiO₂/n-Si elements with heavily doped silicon electrodes were readily erasable at voltage less than −5 V which allows them to be re-programmed. Lightly doped silicon electrode devices were not able to be erased due to their very high reverse breakdown voltage but exhibited extremely low leakage current levels potentially allowing them to be used in low energy one-time programmable arrays.     

Preparation and ferroelectric properties of pyrochlore-free Pb(Ni1/3Nb2/3)O3-based solid solutions

Polycrystalline ceramics of the perovskite solid solution 0.5Pb(Ni_1/3Nb_2/3)O₃-(0.5-x)-Pb(Zn_1/3Nb_2/3)O₃–xPb(Zr_1/2Ti_1/2)O₃; x=0.0–0.5 (PNN–PZN–PZT) were synthesized by a modified columbite method. Highly dense ceramics lacking parasitic pyrochlore phases were prepared at a calcination temperature of 950 °C by using a double-crucible configuration, excess PbO (2 mol %), and a fast heating/cooling rate (20 °C/min). The ceramics were characterized by a variety of techniques including X-ray diffraction, ferroelectric hysteresis loop measurements, field-induced longitudinal strain measurements, and electron microscopy. It was observed that the remanent polarization exhibited a significant increase with increasing x. In addition, the squareness of the hysteresis loop increased quasi-linearly as the molar fraction of PZT increased. The maximum spontaneous polarization and remanent polarization for the x=0.5 composition were 31.9 μC/cm² and 25.2 μC/cm², respectively. Moreover, the data were analyzed to show the evolution of the micro-domain state as a function of the molar fraction of PZT. PACS 77.22.-d; 77.80.Bh; 77.84.Dy; 61.10.Nz; 77.80.Dj     

Magnetotransport properties of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> with different grain sizes

The magnetotransport and magnetoresistive (MR) properties of manganese-based La_0.67Ca_0.33MnO₃ perovskite with different grain sizes are reported. The electrical resistivity was measured as a function of temperature in magnetic fields of 0.5 and 1 T. The insulator–metal transition temperature, T _IM, shifted to a higher temperature with the application of the magnetic field. In zero field, T _IM is almost constant (∼271 K) for all samples except for the sample with the largest grain size, where T _IM=265 K. The temperature dependence of resistivity was fitted with several equations in the metallic (ferromagnetic) region and the insulating (paramagnetic) region. The density of states at the Fermi level, N(E _F), and the activation energy of electron hopping were estimated by fitting the resistivity versus temperature curves. The ρ–T ² curves are nearly linear in the metallic regime, but the ρ–T ^2.5 curves exhibit a deviation from linearity. The variable range hopping model and small polaron hopping model fit the data well in the high-temperature region, indicating the existence of the Jahn–Teller distortion that localizes the charge carriers. MR was found to increase with an increase in the magnetic field, an effect which is attributed to the intergrain spin tunneling effect.     

Superconducting transition temperature in mercury HTSC-cuprates under hydrostatic pressure

A study is made of the properties of the homologous series of mercury HTSC-cuprates HgBa₂Ca_n−1Cu_nO_2n +2+δ with n=1–8. Experiments are conducted under pressure for samples with n=1–5. The Hg-1223 and Hg-1234 phases were synthesized using a controlled high pressure chamber. The oxygen content of an initial mixture corresponding to the Hg-1234 phase was varied by changing the composition of the initial BaO/BaO₂ oxides. The dependence of the superconducting transition temperature T _c on the lattice constant a (and, therefore, on the oxygen content) and of T _c ^max and dT _c ^max /dp on n are convex upward up to n=4, 5. The maximum values always correspond to the Hg-1223 phase. Experimental T _c ^max (n) curves for the phases with n=1–6 and dT _c ^max /dp curves for n=1–5 are compared with Anderson’s theory (the so-called RVB model). A general analysis of these results indicates that the mercury cuprates have an ideal structure for HTSC. The Hg-1223 phase is the “champion” in this ideal structure and the critical temperature corresponding to this phase (T _c =135 K) is the highest at atmospheric pressure. Zh. éksp. Teor. Fiz. 113, 1474–1483 (April 1998)     

Photoelectric properties of ZnO: In nanorods/SiO2/Si heterostructure assembled in aqueous solution

In-doped zinc oxide (ZnO:In) nanorods were grown onto SiO₂/n-Si substrate without catalyst in aqueous solution. The ZnO:In nanorods/SiO₂/n-Si heterostructure photovoltaic device was prepared. The structural and photoelectric properties of the as-grown ZnO:In nanorods were analyzed. ZnO:In nanorods had a strong and broad UV surface photovoltage response in the range of 300–400 nm, and the bands were identified. The photoelectric conversion properties of ZnO:In nanorods/SiO₂/n-Si heterostructure were investigated. ZnO:In/SiO₂/n-Si heterostructure showed a wide range photocurrent spectral response with high intensity in the UV and visible region. The rectifying behavior of this heterostructure was observed. Moreover, the device had a low turn-on voltage and a high breakdown voltage. Current–voltage characteristic was studied for the heterostructure, and the open-circuit voltage and short-circuit current were obtained. PACS 73.40.Lq; 85.35.Be; 81.16.Dn