Improved catalytic activity of Pt/rGO counter electrode in In2O3-based DSSC

A platinum/reduced graphene oxide (Pt/rGO) nanocomposite acting as a counter electrode (CE) was fabricated using a chemical bath deposition method for In₂O₃-based dye-sensitized solar cell (DSSC) via sol-gel technique. The report analyzes the morphological and electrochemical impedance spectroscopy of the annealing Pt/rGO films at 350, 400, and 450 °C. Micrograph images obtained from field emission scanning electron microscopy demonstrated the annealed films are highly porous. The energy-dispersive X-ray results show that the carbon atoms were homogeneously distributed on the film annealed at 400 °C. A good photovoltaic performance was exhibited with high photocurrent density of 8.1 mA cm⁻² and power conversion efficiency (η) of 1.68 % at the Pt/rGO CE annealed at 400 °C. The employed electrochemical impedance spectroscopy analysis quantifies that the Pt/rGO films annealed at 400 °C provide more efficient charge transfer with the lowest effective recombination rate and high electron life time, hence improving the performance of Pt/rGO CE.

     

Structure and electrical properties of HfO<Subscript>2</Subscript> high-<Emphasis Type="Italic">k</Emphasis> films prepared by pulsed laser deposition on Si (100)

High-k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The as-deposited films were amorphous and that were monoclinic and orthorhombic after annealed at 500°C in air and N₂ atmosphere, respectively. After annealed, the accumulation capacitance values increase rapidly and the flat-band voltage shifts from −1.34 V to 0.449 V due to the generation of negative charges via post-annealing. The dielectric constant is in the range of 8–40 depending on the microstructure. The I–V curve indicates that the films possess of a promising low leakage current density of 4.2×10⁻⁸ A/cm² at the applied voltage of −1.5 V.     

Thin TiO2 grown by metal–organic chemical vapor deposition on (NH4)2S x -treated InP

The electrical characteristics of thin TiO₂ films prepared by metal–organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO₂ film of 4.7 nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8×10⁻² and 1.1×10⁻⁴ A/cm² at +2 V bias and 1.6×10⁻¹ and 8.3×10⁻⁴ A/cm² at −2 V bias. The lower leakage currents of TiO₂ with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5×10¹³ cm², respectively. The lowest mid-gap interface state density is around 7.6×10¹¹ cm⁻² eV⁻¹. The equivalent oxide thickness is 0.52 nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6 nm and reaches 9.3 MV/cm at 2.5 nm.     

Structure and impedance spectroscopy of Pr1? x Sr x Fe0.8Co0.2O3? δ ( x =0.1, 0.2, 0.3) thin films grown by laser ablation

Polycrystalline samples of Pr_1−x Sr _x Fe_0.8Co_0.2 O_3−δ (x=0.1, 0.2, 0.3) (PSFC) were prepared by the combustion synthesis route at 1200°C. The structure of the polycrystalline powders was analysed with X-ray powder diffraction data. The X-ray diffraction (XRD) patterns were indexed as the orthoferrite similar to that of PrFeO₃ having a single-phase orthorhombic perovskite structure (Pbnm). Pr_1−x Sr _x Fe_0.8Co_0.2O_3−δ (x=0.1, 0.2, 0.3) films have been deposited on yttria-stabilized zirconia (YSZ) single-crystal substrates at 700°C by pulsed laser deposition (PLD) for application to thin film solid oxide fuel cell cathodes. The structure of the films was analysed by XRD, scanning electron microscopy (SEM) and atomic force microscopy (AFM). All films are polycrystalline with a marked texture and present pyramidal grains in the surface with different size distributions. Electrochemical impedance spectroscopy (EIS) measurements of PSFC/YSZ single crystal/PSFC test cells were conducted. The Pr_0.7Sr_0.3Fe_0.8Co_0.2O_3−δ film at 850°C presents a lower area specific resistance (ASR) value, 1.65 Ω cm², followed by the Pr_0.8Sr_0.2Fe_0.8Co_0.2O_3−δ (2.29 Ω cm² at 850°C) and the Pr_0.9Sr_0.1Fe_0.8Co_0.2O_3−δ films (5.45 Ω cm² at 850°C).     

Highly frequency-, temperature-, and bias-stable dielectric properties of 500 °C processed Bi2SiO5 thin films with low dielectric loss

Excellent dielectric frequency, bias, and temperature stability of bismuth silicate (Bi₂SiO₅, BSO) thin films with a low dielectric loss has been obtained in this study. The thin films were prepared on Pt/Ti/SiO₂/Si substrates by a chemical solution deposition method at a relatively low annealing temperature of 500 °C. The BSO films have a preferred growth along (200) orientation with dense fine-grained surface morphology. The dielectric constant and dielectric loss of the thin film annealed at 500 °C are 57 and 0.01, respectively, at 100 kHz, with little change between 1 kHz and 100 kHz and in the bias electric field range between −250 kV/cm and 250 kV/cm, indicating that the thin film exhibits a low dielectric loss as well as excellent frequency and bias field stability. The dielectric-temperature measurements confirmed that the BSO thin film annealed at 500 °C also has good temperature stability between 150 K and 450 K. Our results suggest that the BSO thin films have potential applications in the next-generation integrated capacitors.     

Nanosized IrO<Subscript>2</Subscript> electrocatalysts for oxygen evolution reaction in an SPE electrolyzer

Nanosized IrO₂ electrocatalysts (d ~ 7–9 nm) with specific surface area up to 100 m² g⁻¹ were synthesized and characterized for the oxygen evolution reaction in a solid polymer electrolyte (SPE) electrolyzer. The catalysts were prepared by a colloidal method in aqueous solution and a subsequent thermal treatment. An iridium hydroxide hydrate precursor was obtained at ~100 °C, which was, successively, calcined at different temperatures from 200 to 500 °C. The physico-chemical characterization was carried out by X-ray diffraction (XRD), thermogravimetry–differential scanning calorimetry (TG–DSC) and transmission electron microscopy (TEM). IrO₂ catalysts were sprayed onto a Nafion 115 membrane up to a loading of 3 mg cm⁻². A Pt catalyst was used at the cathode compartment with a loading of 0.6 mg cm⁻². The electrochemical activity for water electrolysis of the membrane-electrode assemblies (MEAs) was investigated in a single cell SPE electrolyzer by steady-state polarization curves, impedance spectroscopy and chrono-amperometric measurements. A maximum current density of 1.3 A cm⁻² was obtained at 1.8 V and 80 °C for the IrO₂ catalyst calcined at 400 °C for 1 h. A stable performance was recorded in single cell for this anode catalyst at 80 °C. The suitable catalytic activity and stability of the most performing catalyst were interpreted in terms of proper combination between nanostructure and suitable morphology.     

Phase transformation of nanostructured titanium dioxide thin films grown by sol–gel method

Nanostructured TiO₂ thin films were deposited on quartz glass at room temperature by sol–gel dip coating method. The effects of annealing temperature between 200^∘C to 1100^∘C were investigated on the structural, morphological, and optical properties of these films. The X-ray diffraction results showed that nanostructured TiO₂ thin film annealed at between 200^∘C to 600^∘C was amorphous transformed into the anatase phase at 700^∘C, and further into rutile phase at 1000^∘C. The crystallite size of TiO₂ thin films was increased with increasing annealing temperature. From atomic force microscopy images it was confirmed that the microstructure of annealed thin films changed from column to nubbly. Besides, surface roughness of the thin films increases from 1.82 to 5.20 nm, and at the same time, average grain size as well grows up from about 39 to 313 nm with increase of the annealing temperature. The transmittance of the thin films annealed at 1000 and 1100^∘C was reduced significantly in the wavelength range of about 300–700 nm due to the change of crystallite phase. Refractive index and optical high dielectric constant of the n-TiO₂ thin films were increased with increasing annealing temperature, and the film thickness and the optical band gap of nanostructured TiO₂ thin films were decreased.     

Nitrogen implantation in GaAs1−xPx (x=0.4; 0.65)

Nitrogen ions were implanted in GaAs_1−xP_x (x=0.4; 0.65) at room temperature at various doses from 5×10¹² cm⁻² to 5×10¹⁵ cm⁻² and annealed at temperatures from 600°C up to 950°C using a sputtered SiO₂ encapsulation to investigate the possibility of creating isoelectronic traps by ion implantation. Photoluminescence and channeling measurements were performed to characterize implanted layers. The effects of damage induced by optically inactive neon ion implantation on photoluminescence spectrum were also investigated. By channeling measurements it was found that damage induced by nitrogen implantation is removed by annealing at 800°C. A nitrogen induced emission intensity comparable to the intensity of band gap emission for unimplanted material was observed for implanted GaAs_0.6P_0.4 after annealing at 850°C, while an enhancement of the emission intensity by a factor of 180 as compared with an unimplanted material was observed for implanted GaAs_0.35P_0.65 after annealing at 950°C. An anomalous diffusion of nitrogen atoms was found for implanted GaAs_0.6P_0.4 after annealing at and above 900°C.     

Trap characterization for Bi4Ti3O12 thin films by thermally stimulated currents

Thermally stimulated current (TSC) measurements performed in the 100 K–400 K temperature range on Bi₄Ti₃O₁₂ (BiT) thin films annealed at 550 °C and 700 °C had revealed two trapping levels having activation energies of 0.55 eV and 0.6 eV. The total trap concentration was estimated at 10¹⁵ cm⁻³ for the samples annealed at 550 °C and 3×10¹⁵ cm⁻³ for a 700 °C annealing and the trap capture cross-section was estimated about 10⁻¹⁸ cm². From the temperature dependence of the dark current in the temperature range 20 °C–120 °C the conduction mechanism activation energy was found to be about 0.956–0.978 eV. The electrical conductivity depends not only on the sample annealing temperature but also whether the measurement is performed in vacuum or air. The results on the dark conductivity are discussed considering the influence of oxygen atoms and oxygen vacancies. Received: 28 January 1998 / Accepted: 8 January 1999 / Published online: 5 May 1999     

Solution epitaxy of gallium-doped ZnO on p-GaN for heterojunction light-emitting diodes

We report white light emission from a Ga-doped ZnO/p-GaN heterojunction light-emitting diode which was fabricated by growing gallium-doped ZnO film on the p-GaN in water at 90°C. As determined from Ga-doped ZnO films grown on (111) oriented MgAl₂O₄ spinel single crystal substrates, thermal treatment at 600°C in nitrogen ambient leads to a carrier concentration of 3.1×10²⁰ cm⁻³ (and carrier mobility of 28 cm²/Vs) which is two orders of magnitude higher than that of the undoped films. Electroluminescence emissions at wavelengths of 393 nm (3.155 eV) and 529.5 nm (2.4 eV) were observed under forward bias in the heterojunction diode and white light could be visibly observed. The high concentration of electrons supplied from the Ga-doped ZnO films helped to enhance the carrier recombination and increase the light-emitting efficiency of the heterojunction diode.     

Pulsed laser deposition of Zr–N codoped <Emphasis Type="Italic">p</Emphasis>-type ZnO thin films

Present p-type ZnO films tend to exhibit high resistivity and low carrier concentration, and they revert to their natural n-type state within days after deposition. One approach to grow higher quality p-type ZnO is by codoping the ZnO during growth. This article describes recent results from the growth and characterization of Zr–N codoped p-type ZnO thin films by pulsed laser deposition (PLD) on (0001) sapphire substrates. For this work, both N-doped and Zr–N codoped p-type ZnO films were grown for comparison purposes at substrate temperatures ranging between 400 to 700 °C and N₂O background pressures between 10⁻⁵ to 10⁻² Torr. The carrier type and conduction were found to be very sensitive to substrate temperature and N₂O deposition pressure. P-type conduction was observed for films grown at pressures between 10⁻³ to 10⁻² Torr. The Zr–N codoped ZnO films grown at 550 °C in 1×10⁻³ Torr of N₂O show p-type conduction behavior with a very low resistivity of 0.89 Ω-cm, a carrier concentration of 5.0×10¹⁸ cm⁻³, and a Hall mobility of 1.4 cm² V⁻¹ s⁻¹. The structure, morphology and optical properties were also evaluated for both N-doped and Zr–N codoped ZnO films.     

Study of field emission and dielectric properties of AlN films prepared by DC sputtering technique at different substrate temperatures

Nanocrystalline AlN thin films were prepared via DC sputtering technique at different substrate temperature. The crystal orientation and particle size of aluminum nitride thin films were investigated by XRD analysis. Study indicated that the sample contained pure phase hexagonal AlN nanoparticles with a single peak corresponding to the (100) planes. The peak at 665 cm⁻¹ in the FTIR spectrum of film was assigned to the LO phonon of hexagonal AlN. The particle size of the film, prepared at substrate temperature 200°C was about 9.5 nm, as investigated by atomic force microscope. Field emission study indicated that it can be used as a good field emitter. Turn-on field (E_to) of 15.02 V/μm was observed for the AlN films synthesized at substrate temperature 200°C. Dielectric constant of the AlN film was found nearly independent of frequencies in the measured frequency range 1 KHz to 1 MHz, i.e. in the audio frequency range. The values of dielectric constant (ε) were 10.07, 9.46 and 8.65 for the film prepared at 70°C, 150°C and 200°C, respectively, at frequency 1 KHz.     

CW CO2-laser annealing of arsenic implanted silicon

CW CO₂-laser annealing of arsenic implanted silicon was investigated in comparison with thermal annealing. Ion channeling, ellipsometry, and Hall effect measurements were performed to characterize the annealed layers and a correlation among the different methods was made. The laser annealing was done with power densities of 100 to 640 W cm⁻² for 1 to 20 s. It was found that the lattice disorder produced during implantation can be completely annealed out by laser annealing with a power density of 500 W cm⁻² and the arsenic atoms are brought on lattice sites up to 96±2%. The maximum sheet carrier concentration of 6×10¹⁵ cm⁻² was obtained for 1×10¹⁶ cm⁻² implantation after laser annealing, which was up to 33% higher than that after thermal annealing at 600 to 900°C for 30 min.     

SnO2 thin films grown by pulsed Nd:YAG laser deposition

SnO₂ thin films have been deposited on glass substrates by pulsed Nd:YAG laser at different oxygen pressures, and the effects of oxygen pressure on the physical properties of SnO₂ films have been investigated. The films were deposited at substrate temperature of 500°C in oxygen partial pressure between 5.0 and 125 mTorr. The thin films deposited between 5.0 to 50 mTorr showed evidence of diffraction peaks, but increasing the oxygen pressure up to 100 mTorr, three diffraction peaks (110), (101) and (211) were observed containing the SnO₂ tetragonal structure. The electrical resistivity was very sensitive to the oxygen pressure. At 100 mTorr the films showed electrical resistivity of 4×10⁻² Ω cm, free carrier density of 1.03×10¹⁹ cm⁻³, mobility of 10.26 cm² V⁻¹ s⁻¹ with average visible transmittance of ∼87%, and optical band gap of 3.6 eV.     

Effects of deposition temperature and post-annealing on structure and electrical properties in (La<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>)CoO<Subscript>3</Subscript> films grown on silicon substrate

(La_0.5Sr_0.5)CoO₃ (LSCO) thin films have been fabricated on silicon substrate by the pulsed laser deposition method. The effects of substrate temperature and post-annealing condition on the structural and electrical properties are investigated. The samples grown above 650°C are fully crystalline with perovskite structure. The film deposited at 700°C has columnar growth with electrical resistivity of about 1.99×10⁻³ Ω cm. The amorphous films grown at 500°C were post-annealed at different conditions. The sample post-annealed at 700°C and 10⁻⁴ Pa has similar microstructure with the sample in situ grown at 700°C and 25 Pa. However, the electrical resistivity of the post-annealed sample is one magnitude higher than that of the in situ grown sample because of the effect of oxygen vacancy. The temperature dependence of resistivity exhibits semiconductor-like character. It was found that post-annealing by rapid thermal process will result in film cracks due to the thermal stress. The results are referential for the applications of LSCO in microelectronic devices.     

Implantation doping of germanium with Sb,As, and P

The ions of Sb, As, and P have been implanted into germanium at energies ranging from 200 keV to 700 keV. Annealing was performed at 400°C, 550°C, and 650°C. The doping profile was determined by differentialCV-measurements. Strong outdiffusion (80%) and diffusion into the bulk material was observed after annealing. The remaining doping concentration and the diffusion constants were determined by a computer fit at 650°C. We foundD _Sb=1.8×10⁻¹³ cm²/s,D _As=9×10⁻¹⁴ cm²/s andD _P=4×10⁻¹⁴ cm²/s. Lower values of the diffusion constant were determined when the samples were covered with a SiO₂ layer.     

The thermal stability of atomic layer deposited HfLaOx: Material and electrical characterization

HfLaO_x based Metal–oxide–semiconductor capacitors were fabricated by atomic layer deposition in this work. The material and electrical properties of the films along with the high temperature thermal treatment were investigated. It was found that samples undergoing annealing at 900 °C exhibited the best performance. The film was found to be crystallized to a cubic structure at 900 °C, and the roughness of the films was estimated to be 0.332 nm. For electrical characterization, the C–V curve of the film is in good agreement with the corresponding simulated curve, and the capacitor does not show any hysteresis. Moreover, the D_it near the center of silicon band gap exhibits lowest value, and it was calculated to be 2.28 × 10¹¹ eV^?1 cm^?2.     

The growth of Y2SiO5:Ce thin films with pulsed laser deposition

Y₂SiO₅:Ce phosphor thin films were grown onto Si(100) substrates with pulsed laser deposition (PLD) using a 248-nm KrF excimer laser. Process parameters were varied during the growth process and the effect on the surface morphology and cathodoluminescence (CL) was analysed. The process parameters that were changed included the following: gas pressure (vacuum (5×10⁻⁶ Torr), 1×1⁻² Torr and 1 Torr O₂), different gas species (O₂, Ar and N₂ at a pressure of 455 mTorr), laser fluence (1.6±0.1 J cm⁻² and 3.0±0.3 J cm⁻²) and substrate temperature (400 and 600°C). The surface morphology was investigated with atomic force microscopy (AFM). The morphology of the thin films ablated in vacuum and 10 mTorr ambient O₂ showed more or less the same trend. An increase in the pressure to 1 Torr O₂, however, showed a definite increase in deposited particle sizes. Ablation in N₂ gas resulted in small particles of 20 nm in diameter and ablation in O₂ gas produced bigger particles of 20, 30 and 40 nm as well as an agglomeration of these particles into bigger size clusters of 80 to 100 nm. Ablation in Ar gas led to particle sizes of 30 nm and the particles were much more spherically defined and evenly distributed on the surface. The higher fluence deposition led to bigger particle and grain sizes as well as thicker layers with respect to the lower fluence. The particle sizes of the higher fluence vary mainly between 130 and 140 nm and the lower fluence sizes vary between 50 and 60 nm. The higher fluence particles consist of smaller particles ranging from 5 to 30 nm as measured with AFM. The surface structure of the thin film ablated at 400°C substrate temperature is less compact (lesser agglomeration of particles than at 600°C). The increase in substrate temperature definitely resulted in a rougher surface layer. CL was measured to investigate the effect of the surface morphology on the luminescent intensities. The increased O₂ ambient (1 Torr) resulted in a higher CL intensity compared to the thin films ablated in vacuum. The thin film ablated in Ar gas showed a much higher CL intensity than the other thin films. Ablation at a high fluence resulted in a higher CL intensity. The higher substrate temperature resulted in better CL intensities. The more spherically shaped particles and rougher surface led to increase CL intensities.     

Development of sulphurized SnS thin film solar cells

Thin films of tin sulphide (SnS) have been grown by sulphurization of sputtered tin precursor layers in a closed chamber. The effect of sulphurization temperature (T_s) that varied in the range of 150–450 °C for a fixed sulphurization time of 120 min on SnS film was studied through various characterization techniques. X-ray photoelectron spectroscopy analysis demonstrated the transformation of metallic tin layers into SnS single phase for T_s between 300 °C and 350 °C. The X-ray diffraction measurements indicated that all the grown films had the (111) crystal plane as the preferred orientation and exhibited orthorhombic crystal structure. Raman analysis showed modes at 95 cm⁻¹, 189 cm⁻¹ and 218 cm⁻¹ are related to the A_g mode of SnS. AFM images revealed a granular change in the grain growth with the increase of T_s. The optical energy band gap values were estimated using the transmittance spectra and found to be varied from 1.2 eV to 1.6 eV with T_s. The Hall effect measurements showed that all the films were p-type conducting nature and the layers grown at 350 °C showed a low electrical resistivity of 64 Ω-cm, a net carrier concentration of 2 × 10¹⁶ cm⁻³ and mobility of 41 cm² V⁻¹ s⁻¹. With the use of sprayed Zn_0.76Mg_0.24O as a buffer layer and the sputtered ZnO:Al as window layer, the SnS based thin film solar cell was developed that showed a conversion efficiency of 2.02%.     

Characterization of dip-coated ITO films derived from nanoparticles synthesized by␣low-pressure spray pyrolysis

In₂O₃:Sn (Indium Tin Oxide; ITO) films were prepared from a sol solution with highly crystalline ITO nanoparticles (less than 20 nm in size with 10 at.% Sn) which had been prepared by low-pressure spray pyrolysis (LPSP) in a single step. The ITO sol solution was prepared by dispersing LPSP-prepared ITO nanoparticles into ultra pure water. The nanoparticle ITO film was deposited on a glass substrate using a dip-coating method and then annealed in air at various temperatures. The optical transmittances of the ITO films were measured by UV–Vis spectrometry, and the films were found to have a high transparency to visible light (in the case of a film thickness of 250 nm annealed at 400°C, the transparency was in excess of 95% over the range λ=450–800 nm, with a maximum value near 100% at wavelengths above λ=700 nm). The optical transmittances of the films were influenced by the size of the ITO particle used, the film thickness and the annealing temperature. The ITO films showed a minimum resistivity of 9.5×10⁻² Ω cm, and their resistivity was affected by both the ITO particle size and the annealing temperature used.