Ultraviolet-Laser-Induced Crystallization of Sol-Gel Derived Indium Oxide Films

Modification of sol-gel derived indium oxide thin films using ultraviolet lasers was investigated. Irradiation by an ArF excimer (6.4 eV) and the fourth harmonic generation of a Nd : YAG laser (4.7 eV) was found to be effective in crystallization with a loss of hydroxyl groups and a decrease in the sheet resistance of the sol-gel films. Transparent crystalline indium oxide films were successfully obtained by 6.4 eV laser irradiation at fluences below 20 mJ/(cm2·shot), whereas degradation of the films was induced by a relatively high-fluence beam.     

Ultraviolet-Laser-Induced Crystallization of Sol-Gel Derived Inorganic Oxide Films

Structural changes stimulated by ultraviolet (UV) laser irradiations of sol-gel derived inorganic oxide films were investigated. Dried gel films of TiO₂, Nb₂O₅, Ta₂O₅, SrTiO₃ and Pb(Zr _x Ti_1–x )O₃ (PZT) were found to be crystallized by the laser irradiation. On the other hand, the photo-induced change in gel films of BaTiO₃, LiNbO₃ and LiTaO₃ was not observed although the laser beams were absorbed in the films. These sol-gel films were thermally crystallized at almost the same temperature around 600–700°C except TiO₂. Thus, the UV-laser-induced crystallization is not directly ascribed to a simple thermal effect with the irradiation. Photochemical properties of the cations are assumed to be important for the change in sol-gel films.     

Crystallization Behavior of SiO2-TiO2 Sol-Gel Thin Films

The aim of this work was to investigate the crystallization behavior of thin films of SiO₂−TiO₂ made by the sol-gel process as function of the TiO₂ content and the temperature and time of heat treatment. Precursor solutions were prepared by hydrolysis of TEOS (tetraethoxysilane) and TPOT (titaniums tetraisopropoxide). Multilayer films were spun on single crystal silicon wafers. The compositions studied were (on a molar percentage basis) 20TiO₂−80SiO₂, 30TiO₂−70SiO₂, 40TiO₂−60SiO₂ and pure TiO₂. The films were heat treated at different temperatures between 300°C and 1200°C, for different periods of time (30 s-90 h). The crystallization kinetics were followed by micro-Raman spectrometry. Grazing incidence X-ray diffraction showed that the films crystallized into one or both of two crystalline phase of TiO₂: anatase and rutile (for pure TiO₂ only). The volume fractions of the crystalline phase varied from very low values (<1%), up to 100%, for a TiO₂ sample heat treated at 800°C for 8 hours. The results show that the volume fraction of crystalline phase is strongly influenced by the heat treatment temperature and also, to a smaller extent, by the heat treatment time. The most important parameter, however, is the composition of the films: the higher their TiO₂ concentration, the lower is the crystallization temperature and the larger is the crystallized fraction.     

Sol-Gel Derived Barium-Strontium Titanate Films

Sol-gel techniques for the preparation of barium-strontium titanate (BST) films are discussed. The evolution of film microstructure during heat treatment, and the dielectric properties of BST films prepared from alkoxide solutions and from alkoxide solutions modified by 2-ethylhexanoic acid were studied. It is shown that the extent of the modification of the precursors by 2-ethylhexanoic acid changes the precursor molecular complexity governing the microstructure of the films and their electrical properties.     

Structural Changes in Sol-Gel Derived SiO2 and TiO2 Films by Exposure to Water Vapor

Structural changes in sol-gel derived thin films by exposure to water vapor were investigated using Fourier transform infrared absorption spectroscopy, ellipsometry and x-ray diffraction. We found that SiO₂ gel films were densified with a decrease in OH groups by the exposure at 60°–180°C. The shrinkage and the peak frequency of ₄ (TO) for the exposed films were comparable to those heated in a dry atmosphere at temperatures above 500°C. However, OH groups in the films were not completely removed by the water exposure. A subsequent annealing above 300°C changed the structure of the water-exposed SiO₂ films with condensation of the remaining OH groups. Although the exposed SiO₂ gel films were amorphous, TiO₂ gel films were transformed to anatase with a decrease in OH groups by the treatments at 80°–180°C.     

溶胶-凝胶工艺制备发光薄膜研究进展

本文综述了通过深胶－凝胶工艺制备发光薄膜的基本过程、薄膜的表征方法、发光薄膜的当前发展及应用情况。依据组成特点,对溶胶－凝胶法制备的发光薄膜乾地了分类阐述,并预言了今后该法制备发光薄膜的发展趋势。     

溶胶-凝胶-水热晶化法制备锐钛矿TiO2纳米膜的耐蚀性能

以钛酸正丁酯为前驱体, 采用溶胶-凝胶-水热晶化法在不锈钢(SS)表面制备TiO₂纳米膜. 利用X射线衍射(XRD)、Raman光谱、场发射扫描电子显微镜(SEM)、原子力显微镜(AFM)和俄歇电子能谱(AES)表征了TiO₂纳米膜的晶型、表面形貌和表面化学组成. 通过极化曲线和电化学阻抗谱(EIS)研究了TiO₂纳米膜的耐蚀性能. 170 °C下水热晶化制备的锐钛矿TiO₂与450 °C焙烧制备的锐钛矿TiO₂的结晶度类似, 但两种TiO₂薄膜的表面结构存在明显差异, 水热晶化法制备的TiO₂纳米膜在3.5% (w) NaCl溶液中的耐蚀性能优于焙烧法制备的.     

XPS Analysis of Lead Zirconate Titanate Thin Films Prepared Via a Sol-Gel Process

The crystalline phase and composition of sol-gel-derived lead zirconate titanate (PbZr _x Ti_{1 – x} O₃, PZT) thin films were determined by an X-ray photoelectron spectroscopic (XPS) data processing technique. As a result, it was proved that existence of the surface layer with several tens nm in thickness, of which the crystalline phase and composition were different from those of the inside of the thin films, was found. The newly developed XPS analytical technique is much applicable for the characterization of PZT thin film surface.     

Scratch-Resistant Improvement of Sol-Gel Derived Nano-Porous Silica Films

Scratch-resistance of sol-gel derived nano porous silica films were studied. The thin films were prepared with a dip-coating method from both one-step and two-step catalyzed silica sols, and treated in a mixture gas of ammonia and water vapour afterwards. The thin films were characterized by using Atomic Force Microscope (AFM), ellipsometer, Fourier-transform Infrared Spectroscope (FTIR), respectively. Experimental results have shown that the two-step catalysis remarkably improves strength of the films, and abrasion-resistance and adhesion of the silica films were further increased after the mixture gas treatment. It is attributed to the cross-linking of silica particles in the sols by randomly branched or/and entangled linear chains and more Si–O–Si bonds formed by the mixture gas treatment.     

PZT Aerogels: Sol-Gel Derived Piezoelectric 3-3 Composites

Ultrasonic transducers with low acoustic impedances are required for applications in gaseous media. In porous piezoelectrics the pore volume acts as a second medium of a solid-gas composite and thus lowers the overall acoustic impedance. Lead zirconate titanate (PbZr_.53Ti_.47O₃, PZT) aerogels were prepared by sol-gel processing and supercritical drying in isopropanol. Prefiring at 400°C in air and subsequent thermal treatment in saturated PbO-atmosphere results in phase transformation to PZT (perovskite phase), grain growth and aerogel densification. In this paper the densification of this new class of piezoelectric material at temperatures above 600°C is described. Porosities were measured as a function of sintering time and temperature. Changes in the microstructure were characterized by scanning electron microscopy. Dielectric measurements are presented.     

Effect of Niobium Modifications to PZT (53/47) Thin Films Made by a Sol-Gel Route

Niobium-modified lead zirconate titanate thin films (PNZT) with nominal compositions, Pb_(1–0.5x) (Zr_0.53 Ti_0.47)_1–x Nb _x O₃:x = 0.02–0.07, have been prepared using a diol based sol-gel route. Single-layer (0.5 m) films were fabricated on platinised silicon substrates by spin-coating. The effect of niobium additions with regard to phase development, microstructure, and ferroelectric and dielectric properties were investigated for different annealing temperatures. For comparison, unmodified PZT films were also prepared. Niobium substitution increased the crystallisation temperatures for perovskite PNZT phase formation. The values of remanent polarisation P _r and dielectric constant _r were found to decrease with the introduction of Nb. For example, in films heated at 700°C for 15 min, the P _r value of an unmodified PZT film was 31 C cm^–2, compared to 17 C cm^–2 for an x = 0.05 PNZT film, whilst respective relative permittivity values fell from 1190 to 600. The highest Nb concentration film, x = 0.07, did not display any switchable polarisation characteristics, which is consistent with high levels of intermediate pyrochlore phase.     

Sol-Gel Derived Thin Films for Hydrogen Sulphide Gas Sensing

Utilizing the sol-gel fabrication route, we have successfully modified and tailored the optical absorption in the visible spectrum of thionine dye trapped in an MTMS gel-matrix to coincide with the emission of a red diode laser operating at 660 nm. These thionine-doped MTMS thin films coated onto transparent substrates have shown a remarkable change in optical absorption in the presence of gaseous hydrogen sulphide (H₂S) diluted in air and in the absence of any buffer gas. The rapid response, sensitivity, reversibility and durability shown by this material can be exploited in developing absorption-based optical H₂S sensors in either an integrated optics or all-optical fiber approach using a red diode laser source.     

Low-Temperature Preparation of (Ba,Sr)TiO3 Perovskite Phase by Sol-Gel Method

We have investigated on the synthesis of Ba_{1 – x}Sr_xTiO₃ (BST, x = 0.0–1.0) solid solution at low temperature by a sol-gel method using precursor solutions of Ba(OC₂H₅)₂, Sr(OC₂H₅)₂, and Ti(OCH(CH₃)₂)₄ dissolved in 2-methoxyethanol. Crystalline BST solid solution monolithic gels were obtained as dried at 90°C. Crystalline fraction of BST gels increased with increasing concentration of the precursor solution and increasing amount of the hydrolysis water used. Ba_0.4Sr_0.6TiO₃ (x = 0.6) gels from a precursor solution of 0.5 mol/l with hydrolysis water of H₂O/Ti = 50 crystallized during aging at 30°C.     

Gasochromic Behavior of Sol-Gel Derived Pd Doped Peroxopolytungstic Acid (W-PTA) Nano-Composite Films

The behavior of sol-gel prepared thin films exhibiting a gasochromic effect; i.e., a reversibly change in colour from transparent when in air to blue when in H2, has been studied. The films were prepared from a Pd (PdCl2) doped peroxopolytungstic acid sol using a dip-coating technique. Transmission electron microscopy together with selected area electron diffractrometry revealed that the films consist of monoclinic and hexagonal nanocrystalline grains (2–5 nm) embedded in an amorphous phase. This amorphous hydrated phase was established using Infrared (IR) and Raman spectroscopy. Characteristic vibrations observed in the in-situ IR spectra of the coloured and bleached states revealed the presence and the importance of terminal W=O and W—OH2 groups in the colouring of the films. Colouring/bleaching changes of Pd doped W-PTA films observed using in-situ UV-Vis spectroscopy are described in terms of Pd concentration, and the number of reducing/oxidising cycles. The rate of colouring/bleaching is greater for films containing a higher concentration of Pd but the change in the optical density does not increase, i.e., shows saturation.     

Excimer Laser Crystallization of SnO2:Sb Sol-Gel Films

Instead of classical or rapid thermal annealing, KrF excimer laser irradiation has been successfully applied to crystallize dried SnO₂:Sb films elaborated by a sol-gel process. The penetration of the crystallization front below the film surface, as imaged by transmission electron microscopy, is controlled by the laser fluence and the number of pulses and can thus be confined in the film itself without affecting sensitive substrates. All films laser irradiated at fluences higher than 40 mJ/cm² become conductive. At constant laser fluence, the electrical sheet resistance goes through a minimum with increasing number of pulses. The consequence of film's densification and morphology on electrical properties is discussed.     

Preparation and Characterization of Molybdenum Oxide Thin Films by Sol-Gel Process

This paper presents a new sol-gel process to prepare molybdenum oxide thin films. A molybdenum acetylacetonate sol was prepared by employing the system CH₃COCH₂COCH₃/MoO₃/C₆H₅CH₃/HOCH₂CH₂OCH₃. A molybdenum acetylacetonate gel was prepared by addition of aqueous NH₃. Thermal gravimetry (TG) and differential thermal analyses (DTA) of the gel suggested that crystallization of MoO₃ occurs in a 140 K temperature range around 508°C. MoO₃ films were prepared on fused silica, Si (111) and Al₂O₃ (012) substrates by annealing spin coating films of the sol in oxygen environment at 508°C. X-ray diffraction (XRD) showed that all films crystallize in -MoO₃ structure, and crystallites on fused silica substrate are arbitrarily oriented while those on Si (111) and Al₂O₃(012) substrates oriented in the (010) direction. SEM investigations showed that MoO₃ grains of all films are randomly distributed, with a longitudinal dimension of about 1–5 m and the film thickness is about 1 m.     

Immobilization and Characterization of Lactate Dehydrogenase on TEOS Derived Sol-Gel Films

Physical adsorption and physical entrapment techniques have been utilized for the immobilization of lactate dehydrogenase (LDH) on tetraethylorthosilicate (TEOS) derived sol-gel films. The enzyme (LDH) activity has been assayed as a function of time, temperature, pH and pyruvate concentration. The results of photometric measurements used for monitoring the reaction yield a response time of about 1 min, linearity over a concentration range of 0–1.5 × 10^-3 M and detection limit of 5 × 10^-5 M. The TEOS sol-gel films containing LDH have been found to be stable for about 30 days at temperatures 4 to 10°C.     

Nb-Doped PZT Material by Sol-Gel Combustion

Nanocrystalline niobium doped lead zirconate titanate powders (PZTN) were prepared by a citrate-nitrate sol-gel combustion technique. The technique involves three steps: preparation of stable and homogeneous sol, formation of gel, combustion of gel. The sol was prepared by mixing stable solutions of Zr-oxynitrate, Pb-citrate, Nb- and Ti-peroxo-citrate precursors. The heat induced auto ignition leads to the decomposition of precursors and formation of pure perovskite phase after soaking at 400^∘C for 4 h. The particles were found to be irregular aggregates of nanosized primary particles (crystallite size about 30 nm). Different milling treatments were performed in order to improve the sinterability. Ball milled (100 h with PEG) powders were sintered at 1100^∘C for 2 h in air showing 97% relative density at a densification T 100^∘C lower than following the conventional mixed oxide route. The stoichiometry of the system was determined at each stage of the process and no fluctuation was detected.     

Crystallization Behavior of Alkoxy-Derived Cordierite Gels

Alkoxy-derived cordierite gels were synthesized from tetraethylorthosilicate (TEOS), aluminum isopropoxide (Al(OPr ⁱ )₃), and magnesium ethoxide (Mg(OEt)₂). TEOS was partially hydrolyzed at molar ratios H₂O/TEOS = 1.2, in the presence of hydrochloric acid as a catalyst, HCl/TEOS = 0.1. Aluminum and magnesium alkoxides were added successively or as a double alkoxide. Phase transformations occurring in the gel were studied by differential thermal analysis, x-ray diffractometry, and Fourier-transform infrared spectroscopy. In all cases, -cordierite crystallized at similar temperatures (950–1000°C) with small amounts of spinel, which confirms dominant influence of the optimal conditions for partial hydrolysis of TEOS on the gels homogeneity. The transformation of - into -cordierite began at about 1100°C. Broadening of diffraction peaks and appearance of new bands in the FT IR spectra confirmed the transformation of - into modulated -cordierite at temperatures above 1300°C. Differential thermal analysis under nonisothermal conditions also proved homogeneous nucleation with constant rate and three-dimensional crystallite growth during -cordierite crystallization. The overall activation energy of the crystallization of -cordierite is 580 ± 81 kJ/mol.     

Ferroelectric PZT Thin Films by Sol-Gel Deposition

Sol-gel spin coating has a low thermal budget, is cheap compared to vacuum-based techniques and is now routinely used to produce dense, pore-free ferroelectric films. PbZrx Ti(1 – x)O3 (PZT) is utilized in most applications because it has a large remanent polarization, high piezo- and pyroelectric coefficients and optimized electromechanical coupling factors, depending on precise composition. This paper will review some of the principles and applications of PZT films and highlight using transmission electron microscopy some of the basic problems and solutions involved in producing device-quality material on Si-substrates.