Polymerization of solid C<Subscript>60</Subscript> under C<Stack><Subscript>60</Subscript><Superscript>+</Superscript></Stack> cluster ion bombardment

The structure transformation occurring in fullerene film under bombardment by 50 keV C₆₀⁺ cluster ions is reported. The Raman spectra of the irradiated C₆₀ films reveal a new peak rising at 1458 cm⁻¹ with an increase in the ion fluence. This feature of the Raman spectra suggests linear polymerization of solid C₆₀ induced by the cluster ion impacts. The aligned C₆₀ polymeric chains composing about 5–10 fullerene molecules have been distinguished on the film surface after the high-fluence irradiation using atomic force microscopy (AFM). The surface profiling analysis of the irradiated films has revealed pronounced sputtering during the treatment. The obtained results indicate that the C₆₀ polymerization occurs in a deep layer situated more than 40 nm below the film surface. The deep location of the C₆₀ polymeric phase indirectly confirms the dominant role of shock waves in the detected C₆₀ phase transformation.     

Hydrogen-enhanced recrystallization in N<Superscript>+</Superscript>-implanted GaAs

The hydrogen-enhanced recrystallization during thermal annealing in N⁺-implanted GaAs has been studied by combinatorial implantation process. Raman spectroscopy was used to study the crystallization properties of a set of hydrogenated cells on the N⁺-implanted GaAs wafer. A whole competitive process between H⁺ implantation-induced damage and recovery in the regrowth process of amorphous GaAs was observed within the proton dose region of 1.6×10¹⁵ to 1.1×10¹⁷ cm^-2. In H⁺ dose region of 2.1×10¹⁶ to 5.4×10¹⁶ cm^-2, H-enhanced recovery of crystal dominates the regrowth process. The crystal quality is better than that of unhydrogenated cell of N⁺-implanted GaAs in the H⁺ dose range from 4.7×10¹⁶ to 8.1×10¹⁶ cm^-2. It is suggested that the vacancy supersaturation produced during hydrogen irradiation is dominantly responsible for the enhancement of thermal regrowth in the N⁺-implanted GaAs. Both the crystallization and amorphization process are clearly observed in different proton implantation dose regions. PACS 61.72.Vv; 63.20.Dj; 81.05.Ea     

II. Electron-impact dissociative excitation of C<Subscript>2</Subscript>H<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> and C<Subscript>2</Subscript>D<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack>

Absolute cross-sections for electron-impact dissociative ionization of C₂ H₂⁺ and C₂ D₂⁺ to CH⁺, C⁺, C₂⁺ , H⁺, CH₂⁺ and C₂D⁺ fragments are determined for electron energies ranging from the corresponding threshold to 2.5 keV. Results obtained in a crossed beams experiment are analyzed to estimate the contribution of dissociative ionization to each fragment formation. The dissociative ionization cross sections are seen to decrease for more than an order of magnitude, from CH⁺ (5.37±0.10) × 10^-17 cm² over C⁺ (4.19± 0.16) × 10^-17 cm², C₂D⁺ (3.94±0.38) × 10^-17 cm², C₂⁺ (3.82±0.15) × 10^-17 cm² and H⁺ (3.37±0.21) × 10^-17 cm² to CH₂⁺ (2.66±0.14) × 10^-18 cm². Kinetic energy release distributions of fragment ions are also determined from the analysis of the product velocity distribution. Cross section values, threshold energies and kinetic energies are compared with the data available from the literature. Conforming to the scheme used in the study of the dissociative excitation of C₂H₂⁺ ( C₂ D₂⁺ )\left( {\rm C}_2 {\rm D}_2^+ \right), the cross-sections are presented in a format suitable for their implementation in plasma simulation codes.     

A high efficient antireflective down-conversion Y<Subscript>2</Subscript>O<Subscript>3</Subscript>:Bi<Superscript>3+</Superscript>, Yb<Superscript>3+</Superscript> thin films

The high efficient antireflective down-conversion Y₂O₃:Bi, Yb films have been prepared successfully on Si(100) substrates by pulsed laser deposition (PLD) method, Upon excitation of ultraviolet photon varying from 300 to 400 nm, near-infrared emission of Yb³⁺ was observed for the film, can be efficiently absorbed by silicon (Si) solar cell. Most interestingly, there is a very low average reflectivity 1.46% for the incident light from 300 to 1100 nm. To the best of our knowledge, this is the lowest reflectance for the down-conversion thin films prepared by cost efficient method. The surface topography of the high efficient antireflective films can be controllably tuned through the substrate template regulation by optimizing process parameters. Besides, the results showed that there is a close relationship between luminescent property and morphology of the film. With the change of the surface morphology, the intensity of Bi³⁺ and Yb³⁺ emission peaks increase first and then decrease. The obtained results demonstrate that this film can enhance the Si solar cell efficiency through light trapping and spectrum shifting.     

I. Electron-impact ionization and dissociation of C<Subscript>2</Subscript>H<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> and C<Subscript>2</Subscript>D<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack>

Absolute cross-sections for electron-impact ionization and dissociation of C₂H₂⁺ and C₂D₂⁺ have been measured for electron energies ranging from the corresponding thresholds up to 2.5 keV. The animated crossed beams experiment has been used. Light as well as heavy fragment ions that are produced from the ionization and the dissociation of the target have been detected for the first time. The maximum of the cross-section for single ionization is found to be (5.56 ± 0.03)× 10^-17 cm² around 140 eV. Cross-sections for dissociation of C₂ H₂⁺ (C₂D₂⁺) to ionic products are seen to decrease for two orders of magnitude, from C₂D⁺ (12.6 ± 0.3) × 10^-17 cm² over CH⁺(9.55 ± 0.06) × 10^-17 cm², C⁺ (6.66 ± 0.05) × 10^-17 cm², C₂⁺ (5.36 ± 0.27) × 10^-17 cm², H⁺ (4.73 ± 0.29) × 10^-17 cm² and CH₂⁺ (4.56 ± 0.27) × 10^-18 cm² to H₂⁺ (5.68 ± 0.49) × 10^-19 cm². Absolute cross-sections and threshold energies have been compared with the scarce data available in the literature.     

Kinetics of Rb<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> and Rb<Superscript>+</Superscript> formation in laser-excited rubidium vapor

We have studied the formation of the molecular ion Rb₂⁺ and the atomic ion Rb⁺. These are created in laser excited rubidium vapor at the first resonance, 5s–5p and 5p-nl transitions. A theoretical model is applied to this interaction to explain the time evolution and the laser-power dependence of the population density of Rb⁺ and Rb₂⁺. A set of rate equations which describe: the temporal variation of the population density of the excited states; the atomic ion density; and the electron density, were solved numerically under the experimental conditions of Barbier and Cheret. In their experiment the Rb concentration was 1×10¹³cm⁻³ and the laser power was taken to be 50–500 mW at vapor temperature = 450 K. The results showed that the main processes for producing Rb₂⁺ are associative ionization and Hornbeck-Molnar ionization. The calculations have also showed that, the atomic ions Rb⁺ are formed through the Penning Ionization (PI) and photoionization processes. Moreover, a reasonable agreement between the experimental results and our calculations for the ion currents of the Rb⁺ and Rb₂⁺ is obtained.      

Raman measurements on thin films of the La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> manganite: a probe of substrate-induced effects

We report on a Raman study of the phonon spectrum of La _0.7Sr_0.3MnO₃ thin films epitaxially grown on LaAlO₃. The spectrum, as a function of film thickness d, does not change over the 1000–100 ? range, whereas a strong hardening of the phonon frequencies of both bending and stretching modes is apparent in ultra-thin films (d<100 ?) where substrate-induced effects are remarkable. This behaviour, which appears to be related with the measured d-dependence of the insulator-to-metal transition temperature, is ascribed to co-operative effects of MnO₆ octahedra rotation and charge-localization. Raman spectroscopy proves to be a simple and powerful tool to monitor subtle structural modifications hardly detectable with conventional diffraction techniques in ultra-thin films.     

Electron-impact ionization and dissociation of C<Subscript>2</Subscript>D<Superscript>+</Superscript>

Absolute cross sections for electron-impact single ionization, dissociative excitation and dissociative ionization of the ethynyl radical ion (C₂D⁺)^+) have been measured for electron energies ranging from the corresponding reaction thresholds to 2.5 keV. The animated crossed electron-ion beam experiment is used and results have been obtained for the production of C₂D²⁺, C²⁺, C₂⁺_2^+ , CD⁺, C⁺ and D⁺. The maximum of the cross section for single ionization is found to be (2.01 ± 0.02) × 10^-17 cm², at the incident electron energy of 105 eV. Absolute total cross sections for the various singly charged fragments production are observed to decrease by a factor of almost three, from the largest cross-section measured for C⁺, over C₂⁺_2^+ and CD⁺ down to that of D⁺. The maxima of the cross sections are obtained to be (14.5 ± 0.5) × 10^-17 cm² for C₂⁺_2^+, (12.1 ± 0.1) × 10^-17 cm² for CD⁺, (27.7 ± 0.2) × 10^-17 cm² for C⁺ and (11.1 ± 0.8) × 10^-17 cm² for D⁺. The smallest cross section is measured to be (1.50 ± 0.04) × 10^-18 cm² for the production of the doubly charged ion C²⁺. Individual contributions for dissociative excitation and dissociative ionization are determined for each singly-charged product. The cross sections are presented in closed analytic forms convenient for implementation in plasma simulation codes. Kinetic energy release distributions of dissociation fragments are seen to extend from 0 to 6 eV for the heaviest fragment C₂⁺_2^+, up to 11.0 eV for CD⁺, 14.2 eV for C⁺ and 11.2 eV for D⁺ products.     

Double-beta decay of <Superscript>150</Superscript>Nd to the first 0<Superscript>+</Superscript> excited state of <Superscript>150</Superscript>Sm

Two-neutrino-double-beta decay of ¹⁵⁰Nd to the first 0⁺ excited state in ¹⁵⁰Sm is investigated with a 400-cm³ low-background HPGe detector. Data analysis for 11320.5 h shows an excess of events at 333.9 and 406.5 keV. This allows us to estimate the half-life of the investigated process as [1.4 _?0.2 ^+0.4 ±0.3(syst.)]×10²⁰ yr.     

Surface characteristics of V-Ga alloys after irradiation by Ar<Superscript>+</Superscript> and N<Superscript>+</Superscript> ions

V-5Ga-6Cr and V-5Ga-0.05Ce vanadium alloys irradiated by Ar⁺ and N⁺ ions with energies of 20 keV have been investigated. Irradiation by Ar⁺ and N⁺ ions leads to strengthening of the surface layers of samples. Their thicknesses exceed the projectile ranges of these ions (16.4 and 32.8 nm, respectively) in vanadium by more than two orders of magnitude. The experimentally determined penetration depth of argon ions is less that 70 nm. The sample side irradiated by Ar⁺ ions has a predominant orientation of crystallites in the (100) and (211) planes, while the unirradiated sample has a (110) surface. The lattice parameter of the irradiated sample does not differ from that of the initial sample. Possible mechanisms by which modified deep layers are formed during ion bombardment are discussed.     

Evolution of Phase Composition and Structure in Sapphire Implanted with <Superscript>64</Superscript>Zn<Superscript>+</Superscript> Ions and Heat-Treated in Oxygen

Single-crystal Al₂O₃ substrates are implanted with ⁶⁴Zn⁺ ions using doses of 5 × 10¹⁶ cm^–2 and an energy of 100 keV. The samples are annealed in oxygen with a stepwise increase in temperature from 400 to 1000°C. The changes on the surface and in the bulk of the sample are analyzed via scanning electron microscopy, energy-dispersive analysis, transmission electron microscopy, and Auger electron spectroscopy.     

Double-beta decay of <Superscript>150</Superscript>Nd to the first 0<Superscript>+</Superscript> excited state of <Superscript>150</Superscript> Sm: Current state

Two-neutrino double-beta decay of ¹⁵⁰Nd to the first 0⁺ excited state in ¹⁵⁰Sm is investigated with the 400-cm³ low-background HPGe detector. Preliminary data analysis for 6843 h shows an excess of events at 333.9 and 406.5 keV. If this excess is assigned to the investigated transition, then its half-life can be estimated at [1.2 _?0.3 ^+0.5 ±0.4(syst.)]×10²⁰ yr.     

Kinetics of radiation-induced segregation in 12Cr-MoWSiVNbB steel after Ni<Superscript>++</Superscript> and He<Superscript>+</Superscript> ion irradiation

Ferritic-martensitic 12Cr-MoWSiVNbB (EP-823) steel was irradiated with 7 MeV Ni⁺⁺ ions within fluence interval 5 × 10¹⁸−5.4 × 10¹⁹ ions/m² and with 30 and 70 keV He⁺ ions within fluence interval 10²⁰–10²¹ ions/m² at 500°C. Results from a comparative analysis of Cr and Si radiation-induced segregation profiles near the surface are presented. Dependence of the amount of surface segregation on damage dose, displacement generation rate, and radiation-induced point defects concentration is established.     

Optical absorption spectra of the Bi<Superscript>+</Superscript> impurity center in CsCdBr<Subscript>3</Subscript> ternary bromide

Optical absorption spectra of the Bi⁺ impurity center isomorphically substituting Cs⁺ in CsCdBr3 are recorded over a wide temperature range (from 3.2 to 300 K). An analysis of the vibrational degrees of freedom of the impurity center within the framework of the model of a single effective phonon mode yields various spectroscopic parameters of the optical transition in the Bi⁺ ion, such as the zero-phonon transition energy, Huang–Rhys parameter, and effective phonon energy. The results are used to compare the properties of the Bi⁺ center in various crystalline matrices.     

Frequency measurements in the b <Superscript>3</Superscript>Π(0<Subscript>u</Subscript><Superscript>+</Superscript>) - X <Superscript>1</Superscript>Σ<Subscript>g</Subscript><Superscript>+</Superscript> system of K<Subscript>2</Subscript>

Absolute transition frequencies of the b ³Π(0_u ⁺) - X ¹Σ_g ⁺ system of K₂ were measured in a molecular beam with Lamb dip absorption spectroscopy applying a frequency comb from a femtosecond pulsed laser. Both, K atoms and K₂ molecules are present in the beam and are expected to interact by collisions. The atoms can be deflected optically out of the beam, and thus the collision rate between K atoms and K₂ molecules is changed by about an order of magnitude. The molecular transition frequencies for low collisional rate are compared with those for high one. Limits for the collisional frequency shift within the beam are determined.     

Absolute cross-sections and kinetic-energy-release distributions for electron-impact ionization and dissociation of CD<Stack><Subscript>3</Subscript><Superscript>+</Superscript></Stack>

Absolute cross-sections have been measured for electron-impact dissociative excitation and ionization of CD₂⁺ leading to formation of CD₂²⁺, CD⁺, C⁺, D₂⁺ and D⁺. The animated crossed-beams method is applied in the energy range from the reaction threshold up to 2.5 keV. The maximum total cross-sections are found to be (1.2±0.1)×10^-17 cm², (6.1±0.7)×10^-17 cm², (6.4±0.7)×10^-17 cm², (26.3±3.8)×10^-19 cm² and (14.9±1.4)×10^-17 cm² for CD₂²⁺, CD⁺, C⁺, D₂⁺ and D⁺ respectively. Individual contributions for dissociative excitation and dissociative ionization are determined for each singly-charged product, which are of significant interest in fusion plasma edge modelling and diagnostics. Conforming to the scheme recently applied in the CD₄⁺ and in the CD₃⁺ articles, the cross-sections are presented in closed analytic forms convenient for implementation in plasma simulation codes. Kinetic-energy-release distributions are determined for each ionic fragment at selected electron energies.     

Enhanced luminescence in ZnGa<Subscript>2</Subscript>O<Subscript>4-x</Subscript>S<Subscript>x</Subscript>:Mn<Superscript>2+</Superscript> thin-film phosphors grown on MgO(100) substrate

Mn-doped ZnGa₂O_4-xS_x thin-film phosphors have been grown using a pulsed laser deposition technique at varying growth conditions. Structural characterization was carried out on a series of ZnGa₂O_4-xS_x:Mn²⁺ films grown on MgO(100) substrates using Zn-rich ceramic targets. Oxygen pressure was fixed at 100 mTorr and substrate temperatures were varied from 500 to 700 °C. The results of X-ray-diffraction patterns showed that the lattice constants of the ZnGa₂O_3.95S_0.05:Mn²⁺ thin films decrease with the substitution of sulfur for the oxygen in ZnGa₂O₄. Measurements of photoluminescence (PL) properties of ZnGa₂O_4-xS_x:Mn²⁺ thin films have indicated that MgO(100) is one of the most promising substrates for the growth of high-quality ZnGa₂O_4-xS_x:Mn²⁺ thin films. In particular, the incorporation of sulfur into the ZnGa₂O₄ lattice could induce a remarkable increase of PL. The highest green-emission intensity was observed with ZnGa₂O_3.95S_0.05:Mn²⁺ films, whose brightness was increased by a factor of 3.5 in comparison with that of ZnGa₂O₄:Mn²⁺ films. This phosphor may be promising for application to flat-panel displays. PACS 78.20.-e; 78.55.-m; 78.66.-w     

Charge transfer in the collision system He<Superscript>2+</Superscript> + C<Stack><Subscript>60</Subscript><Superscript>+</Superscript></Stack>: Theory and experiment

Fullerenes are a direct link between atoms with discrete electronic energy levels and solids with a band structure and a well-defined surface. In this paper, we report on a quantum mechanical treatment of charge transfer and ionization in the ion-ion collision system ³He²⁺ + C ₆₀ ⁺ . This approach considers under- and over-barrier transitions through the one-dimensional barrier between the collision partners. The calculated cross sections for charge transfer compare favorably with experimental data measured in the center-of-mass energy range from 27 to 196 keV employing the crossed beams technique.     

Electron impact dissociation of ND<Superscript>+</Superscript>: formation of D<Superscript>+</Superscript>

Absolute cross sections for electron impact dissociation of ND⁺ leading to the formation of D⁺ have been measured by applying the animated electron-ion beam method in the energy range from the reaction threshold up to 2.5 keV. The maximum inclusive cross section is observed to be (16.8 ± 0.8) × 10⁻¹⁷ cm² at the electron energy of 65.1 eV. The appearance energy for the D⁺ production is measured to be (4.0 ± 0.5) eV. Collected data are analyzed in details by means of an original procedure in order to determine separately the contributions of dissociative channels. A specific Monte Carlo modeling has been developed, which is proven to reconstruct adequately the dissociative ionization cross section. The present energy thresholds provide information about the ground and excited states of the molecular ion, as well as about the possible population of the vibrational levels. The reaction D₂(v) + N⁺ (or H₂(v) + N⁺) is a probable source for that population and it constitutes the first step of the molecular activated processes, so the corresponding chain of reactions has to be considered to study the chemistry of plasma sources.