利用被动锁模技术实现超短脉冲激光输出实验

基于被动锁模技术,设计了结构紧凑的Z型谐振腔,采用半导体可饱和吸收镜作为被动锁模元件,利用激光二极管泵浦增益线宽较宽的Nd∶YVO4晶体,最终实现了连续锁模的脉冲输出.在输入功率为8.20W时,获得了输出功率为1.72W的1 064nm连续锁模脉冲激光输出,光-光转换效率达21%,锁模脉冲重复频率为110MHz.     

Passive mode locking of an in-band-pumped Ho:YLiF4 laser at 2.06 μm

We demonstrate the passive mode-locking operation of an in-band-pumped Ho:YLiF(4) laser at 2.06 μm using a semiconductor saturable absorber mirror based on InGaAsSb quantum wells. A transform-limited pulse train with minimum duration of 1.1 ps and average power of 0.58 W has been obtained at a repetition frequency of 122 MHz. A maximum output power of 1.7 W has been generated with a corresponding pulse duration of 1.9 ps.     

低温GaAs被动调Q锁模Nd:Gd0.42 Y0.58VO4 混晶激光器特性研究

采用低温生长GaAs晶体作为被动饱和吸收体兼输出镜,实现了Nd:Gd0.42Y0.58VO4混晶激光器的调Q锁模运转.研究了Nd:Gd0.42Y0.588VO4激光器的基频运转特性.在输出镜透射率T=10%、腔长L=40 mm的情况下,当抽运功率为8.6 W时,获得激光输出功率3.78 W,光-光转换效率为43.9%.并测量了Nd:Gd0.42Y0.58VO4混晶被动调Q激光器的输出特性.实验结果表明激光器调Q运转阈值为2 W,当抽运功率为3.7 W时,激光器出现调Q锁模行为;当抽运功率为8.6 W时,激光器调Q锁模深度达70%以上,对应的脉冲包络重复频率为670 kHz,半峰全宽为180 ns,平均输出功率为1.35 W,光-光转换效率为15.7%.     

A 1.7-ps pulse mode-locked Yb3+:Sc2SiO5 laser with a reflective graphene oxide saturable absorber

By using a reflective graphene oxide as saturable absorber,a diode-pumped passively mode-locked Yb3+:Sc2Si O5(Yb:SSO)laser has been demonstrated for the first time.Without extra negative dispersion compensation,the minimum pulse duration of 1.7 ps with a repetition rate of 94 MHz was obtained at the central wavelength of 1062.6 nm.The average output power amounts to 355 m W under the absorbed pump power of 15 W.The maximum peak power of the mode-locking laser is up to 2.2 k W,and the single pulse energy is 3.8nJ.     

Diode-end-pumped passively mode-locked Nd:GGG laser with a semiconductor saturable mirror

We report on the passive mode-locking of a diode-end-pumped neodymium-doped gadolinium gallium garnet (Nd:GGG) crystal with a semiconductor saturable absorber mirror (SESAM). Continuous wave (CW) mode-locking was obtained. The mode-locked pulse duration was estimated to be ∼17.5 ps with a maximum average output power of 0.4 W. The mode-locked pulses have a repetition rate of 121.5 MHz. To our knowledge, this is the first demonstration of passive mode-locking of the diode pumped Nd:GGG lasers.     

A diode-pumped high power Q-switched and self-mode-locked Nd:YVO4 laser with a LiF:F2- saturable absorber

Simultaneous mode-locking and Q-switching has been accomplished in a diode-pumped Nd:YVO₄/LiF:F₂ ^- laser. At an absorbed pump power of 23.6 W, the average output power was 6.0 W and the repetition rate of the Q-switched pulse was 260 kHz. A depth of mode-locking of 100% was obtained and there was no satellite pulse between mode-locked pulse trains. The mode-locked pulse inside the Q-switched pulse had a repetition rate of approximately 148 MHz and its average duration was estimated to be around 75 ps. Received: 6 February 2001 / Revised version: 23 April 2001 / Published online: 18 July 2001     

Theoretical and experimental study of single mode-locking pulse generation with low repetition rate in a dual-loss-modulated QML YVO4/Nd:YVO4 laser with EO and GaAs

Using electro-optic (EO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser at 1.06 μm is realized. The experimental results show that the number of the mode-locking pulses underneath the Q-switched envelope decreased with increasing pump power. With an output coupling of 6.5 %, the single mode-locking pulse underneath the Q-switched envelope with 1 kHz repetition rate was obtained when the pump power exceeded 4.65 W. At a pump power of 8.25 W for an output coupling of 10 %, a stable mode-locking pulse train at a repetition rate of 1 kHz was achieved with pulse energy as high as 582 μJ and pulse duration of about 580 ps, corresponding to a peak power of 1 MW. Using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled rate equations for diode-pumped doubly QML YVO₄/Nd:YVO₄ laser are given and the numerical solutions of the equations are basically in accordance with the experimental results.     

Diode-pumped femtosecond Yb:CaNb2O6 laser

We report to our knowledge a diode-pumped passively mode-locked Yb:CaNb(2)O(6) (Yb:CN) laser for the first time. Both CW and passive mode-locking operation of the laser are experimentally investigated. A maximum CW output power of 1.4 W with a slope efficiency of 20% is obtained on a 7 mm long 1.5 at.% Yb:CN crystal, while stable passive mode-locking with a commercial semiconductor saturable absorption mirror (SESAM) was achieved on a 3 mm long 3 at.% Yb:CN crystal. The mode-locked pulses have pulse width of 251 fs and an average output power of 44 mW at 1038 nm.     

888 nm LD抽运Nd∶YVO4被动锁模皮秒振荡器

报道了基于888 nm半导体抽运Nd∶YVO4晶体连续被动锁模的皮秒振荡器。通过热激发抽运方式改善激光器的热性能,提高锁模振荡器输出的平均功率与单脉冲能量。利用半导体可饱和吸收体(SESAM)实现激光器锁模运转的启动与维持。在抽运功率为60 W时,获得最大输出功率为15 W,重复频率为53 MHz的皮秒脉冲输出,光-光转换效率为24%。在输出功率为15 W时脉冲宽度为45 ps。     

Nd,Cr:YAG自调Q自锁模激光器的研究

实验采用光纤耦合激光二极管泵浦,得到了二极管泵浦Nd,CrYAG自调Q自锁模1.064 μm激光输出,其锁模调制深度达到了近100%,其输出功率最高可达1.9 W,平均输出功率稳定性优于1%.实验表明平均输出功率、重复频率和脉冲宽度随泵浦功率增加而上升.     

Diode-pumped passively mode-locked Nd:KGd(WO(4))(2) laser with 1-W average output power

Continuous-wave passive mode locking of a diode-pumped Nd:KGd(WO(4))(2) laser is demonstrated. The use of a saturable Bragg reflector as the mode-locking element permits the generation of 6.3-ps pulses, assuming a sech(2) pulse shape. An output power of 1 W was obtained, which corresponds to a slope efficiency of 34.5%.     

Diode-pumped simultaneously Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/LBO red Laser

A diode-end-pumped simultaneously Q-switched and mode-locked intracavity frequency doubled Nd:GdVO₄/LBO red laser with an acousto-optic Q-switch was realized. The maximum red laser output power of 250 mW was obtained at the incident pump power of 8.3 W and the repetition rate of 10 kHz. At 5 kHz, the maximum mode-locking modulation depth of about 80% was achieved with the Q-switched pulse width of 440 ns. The red mode-locked pulse inside the Q-switched pulse had a repetition rate of 115 MHz, its average pulse width was estimated to be about 350 ps.     

High-power, passively mode-locked Nd:GdVO₄ laser using single-walled carbon nanotubes as saturable absorber

We use a new (to our knowledge) fabrication method of a single-walled carbon nanotube (SWCNT) absorber without polymer to sustain high-power illumination. Using a series of saturable absorbers (SAs) incorporating different amounts of SWCNTs, we demonstrate mode-locking for a Nd:GdVO? laser in the 1 μm spectral range. Continuous-wave mode-locking (CWML) pulses with a maximum output power of 3.6 W at 1063 nm and high noise extinction of 61 dB has been achieved to give the highest pulse peak power of 3.6 kW and pulse energy of 30 nJ under 15 W pumping. To our knowledge, this is the highest CWML output power with SWCNT-SAs reported. The measured nonlinear absorption of the SWCNT-SAs shows a modulation depth of ~3% with subpicosecond recovery time.     

High-power passively Q-switched mode-locking Nd:GdVO4 laser with LT-InGaAs saturable absorber

The generation of passively Q-switched mode-locking (QML) pulse has been obtained from a diode-pumped Nd:GdVO₄ laser with a LT-InGaAs wafer as saturable absorber as well as output coupler. Under the incident pump power of 10 W, an average output power of QML was 1.8 W with a Q-switched repetition rate of 280 kHz. The pulse duration of Q-switched pulse is about 160 ns and mode-locked pulse within the Q-switched envelope had a repetition rate of 410 MHz. It is indicated that the present LT-InGaAs is a very promising device in the field of mode locking solid-state laser, and we are sure that it will be complete pure cw mode locking with single beam output easily after further optimizing in the parameter such as saturation fluence, modulation depth, recovery time and damage threshold in semiconductors.     

7 W laser diode end-pumped Nd:YVO<Subscript>4</Subscript> passively mode-locking laser with a semiconductor saturable absorber mirror

A powerful and stable LD end pumped Nd:YVO₄ passively mode-locking oscillator by SESAM was demonstrated. At the pumping power of 30 W, 7 W output was obtained with repetition rate of 79.5 MHz and pulse duration of 15 ps. The beam quality factors M ² were measured to be 1.30 and 1.33, respectively.     

二极管端面泵浦的附加脉冲锁模的Nd：YLF激光器

研究了二极管端面泵浦的附加脉冲锁模的Ｎｄ：ＹＡＧ激光器并分析了脉冲压缩原理及自启动机制,在最大泵浦功率为２．４Ｗ时,得到重复频率为１３４ＭＨｚ、脉宽为２ｐｓ、有效输出功率７６ｍＷ、相应峰值继２８３Ｗ、波长为１．０５３μｍ、波长为１．０５３μｍ的稳定的连续模脉冲序列。     

LD泵浦全固态355nm紫外皮秒脉冲激光器

利用激光二极管（LD）端面抽运Nd∶YVO4激光晶体皮秒三倍频355nm全固态紫外激光器,采用半导体可饱和吸收镜（SESAM）锁模技术及皮秒再生放大技术,对1 064 nm基波采用Ⅰ类相位匹配Li3B3O5（LBO）晶体二倍频和Ⅱ类相位匹配LBO晶体三倍频,获得了稳定性好、倍频效率较高的355 nm紫外激光输出。当二极管泵浦功率为5 W时,获得了脉宽为17 ps、重复频率为1 Hz、单脉冲能量为129.6 J的稳定三倍频紫外激光输出,基频光到二倍频光和三倍频光的转换效率分别达到60.3%和16.6%,3 h输出单脉冲能量的抖动在0.58%以下。     

Diode-end-pumped passively mode-locked high-power Nd:YVO4 laser with a relaxed saturable Bragg reflector

We demonstrate a high-power passively mode-locked Nd:YVO (4) laser that uses a saturable Bragg reflector (SBR) with strain relaxation. 23.5 W of average power with ~21.5-ps cw mode-locked pulse trains was generated at a 50-W pump power. Experimental results show that appropriate strain relaxation in the SBR makes the mode-locking operation less sensitive to temperature variation.     

半导体可饱和吸收镜被动锁模侧面抽运Nd:YAG激光器研究

利用半导体可饱和吸收镜(SESAM)锁模技术实现的超快脉冲激光器具有结构简单紧凑、脉冲序列稳定等优势,在许多领域有着重要用途,自问世以来受到国内外的广泛关注.分析了SESAM被动锁模侧面抽运固体激光器的具体要求,进行了不同条件下的SESAM被动锁模侧面抽运Nd:YAG激光器实验.获得了最高平均功率9.5 W,脉冲重复频率71 MHz,单脉冲能量约141 nJ的皮秒激光脉冲.对SESAM被动锁模侧面抽运Nd:YAG激光器进行了实验和理论分析,对实现高功率连续超短脉冲激光器进行了探讨.     

Femtosecond and continuous-wave laser performance of a diode-pumped Yb3+:CaYAlO4 laser

The cw and femtosecond laser operations of Yb(3+):CaYAlO(4) (Yb:CYA) are demonstrated. The laser emitted a maximum cw power of 1.94 W with a slope efficiency (η(slope)) of 71% and an optical-to-optical efficiency (η(opt)) of 51%. Under mode-locking operation, the laser emitted near transform-limited pulses with 156 fs pulse width, 8.1 nJ pulse energy and 0.74 W average power. The η(slope) and η(opt) of the mode-locked laser were 37% and 20%, respectively.