Talbot外腔压窄线阵大功率半导体激光器输出谱宽

线阵半导体激光器（LDA）内部发光元周期排列,基于Talbot效应,改进传统Littrow外腔窄线宽系统,在Littrow外腔中置入反射率为20%平平镜构成Talbot外腔以进一步窄化激光器输出谱宽,并将外腔窄线宽输出通过铷池进行吸收实验。实验结果表明：铷池对Tablot外腔输出吸收系数比Littrow外腔吸收系数相对提高42.9%,说明Talbot外腔能有效提高外腔输出谱宽的均匀性,提高半导体激光器泵浦效率。     

利用外腔改善半导体激光器列阵的远场特性

采用一个由快轴准直透镜和一个高反射率平面镜组成的简单外腔,在腔长为几个cm时实现了半导体激光器列阵中部分单元的锁相运行;DLA远场出现了3个瓣,每瓣发散角为10 mrad左右,对比度为50%;通过控制部分单元的输出,可以抑制旁瓣的能量.     

半导体激光器列阵在外腔下的光谱特性

使用普通高反镜作为19个单元的半导体激光器列阵(LDA)的外腔,通过调节高反镜的位置和角度,使LDA发出的光反馈回有源层,从而压窄了输出光谱并降低了LDA的阈值电流.实验中,运行于外腔下的LDA在不同的驱动电流下的输出光谱均被压窄到了原来的1/10左右,阈值电流从7 A降到了5.5 A,并且在9 A的偏置电流下输出功率提高了2倍.     

Tunable diode laser spectroscopy with optimum wavelength scanning

In this paper, an improved signal processing method is given, aiming at a sensitivity improvement of the tunable diode laser spectroscopy based gas concentration measurement. The gas absorption spectrum is probed with an optimum wavelength scanning function which enables a more efficient curve fit than for traditional linear wavelength scanning. The wavelength scanning function is determined to be optimum, in the sense that the variance of the estimated concentration noise is minimized. This optimum scanning function depends on the signal model used in curve fitting. Several models including interfering gas spectra and etalon fringes are examined. Compared to the gas absorption spectrum recorded by ramping the wavelength linearly, the optimum spectrum waveforms have a cascade structure, which means that the optimum scanning preferably samples important points of the spectrum. The new method theoretically enables a factor of ～2 improvement on detection sensitivity of the estimated concentration. Furthermore, direct spectroscopy is superior to second harmonic detection, because the concentration noise can be an additional factor of ～2 lower.     

外腔锁相宽发光区二极管激光列阵研究

利用简单的外腔,实现了具有宽发光区的商用半导体二极管激光列阵(DLA)的外腔锁相。光谱测量表明,DLA的谱宽由自由运行时的1.9 nm压缩到了0.16 nm,峰值波长由803.8 nm调整到805.5 nm;实测远场光瓣间角距等于1.6 mrad,即波长与发光单元间距之比,表明列阵运行在基超模(或最高阶超模);峰谷结构调制度大于0.8。观察表明,外腔长度在1/10~1/6泰伯距离内变化时,锁相均能实现。实验事实表明锁相是交叉注入锁定的结果。利用半导体激光注入锁定理论,定性分析了外腔DLA由自由振荡向锁相过渡的过程,预言了锁相场波长应出现在自由运行DLA光谱长波端,实验也证实了这一事实。     

一种实现光纤激光器高功率输出的方法

介绍了一种实现光纤激光器高功率输出的新方法——采用螺旋芯光纤，这种光纤是在光纤制作过程中按照一定的弯曲半径使纤芯呈螺旋状排布在光纤包层中。介绍了这种螺旋芯光纤的原理和其提高输出功率的能力，以及目前的理论与实验研究现状。基于该光纤，提出了一种光纤激光器相干合成新思想。     

Tunable single-mode Fabry-Perot laser diode using a built-in external cavity and its modulation characteristics

A tunable single-mode laser is obtained by using a weakly coupled cavity structure involved in a coaxially packaged Fabry-Perot laser diode. The cleaved end facet of the coupling fiber becomes an optical reflector and forms an external cavity with a laser facet. The single-mode oscillation condition is controlled and stabilized by tuning the operating temperature. The tuning range is about 10 nm with the side-mode suppression ratio of more than 27 dB when the temperature changes from 11.5 degrees C to 25 degrees C. Direct modulation characteristics were investigated, and our results show that a shorter external cavity can bear deeper modulation depth.     

二极管激光阵列在Talbot外腔中同相模的选择

 从理论和实验上对二极管激光阵列在Talbot外腔中的锁相进行了研究。在同相模和异相模近场分布的基础上,利用1维情况下的菲涅耳衍射公式计算了其远场分布。根据同相模和异相模在Talbot腔中的分布特性,采用1/2 Talbot腔并将外腔镜倾斜一个角度a的方法既能选择同相模,又能使模式的功率损耗最小。二极管激光阵列芯片采用CD金刚石材料,“三明治”结构对其进行封装,明显地减小了阵列的“smile”效应。在实验中实现了二极管激光阵列同相模的锁相输出,远场单瓣模的半高全宽为0.11 mm。     

Dual-wavelength bandwidth-narrowed output of a high-power diode laser using a simple external cavity

Using an external cavity consisting of an etalon and a mirror, dual-wavelength operation of a high-power broad-area multi-stripe diode laser is achieved. The reflection of the etalon is used as the output beam of the system. The free-running bandwidth of the laser diode is about 2.0 nm. At dual-wavelength operation, the bandwidth of each wavelength component is narrowed to about 0.07 nm, while the space between them is 1.65 nm, determined by the FSR of the etalon. We obtain an available dual-wavelength output power of 2.0 W at the drive current of 6.5 A. The power ratio of the components at two different wavelengths can be changed by changing the temperature of the diode laser. To tune the wavelength of the dual-wavelength output, the temperature of the laser diode and the tilt angle of the etalon are changed simultaneously PACS 42.55.Px; 42.60.Fc; 42.60.Da     

Spectral beam combining of a broad-stripe diode laser array in an external cavity

The outputs from an 11-element, linear diode laser array with broad stripes have been beam combined into a single beam with a beam quality of ~20x diffraction limited in the plane of the junction. This beam combining was achieved by use of a common external cavity containing a grating, which simultaneously forces each array element to operate at a different, but controlled, wavelength and forces the beams from all the elements to overlap and propagate in the same direction. The power in the combined beam was 50% of the output from the bare laser array.     

二极管激光阵列在Talbot外腔中同相模的选择

从理论和实验上对二极管激光阵列在Talbot外腔中的锁相进行了研究。在同相模和异相模近场分布的基础上,利用1维情况下的菲涅耳衍射公式计算了其远场分布。根据同相模和异相模在Talbot腔中的分布特性,采用1/2 Talbot腔并将外腔镜倾斜一个角度a的方法既能选择同相模,又能使模式的功率损耗最小。二极管激光阵列芯片采用CD金刚石材料,“三明治”结构对其进行封装,明显地减小了阵列的“smile”效应。在实验中实现了二极管激光阵列同相模的锁相输出,远场单瓣模的半高全宽为0.11 mm。     

外腔中半导体二极管激光阵列的高阶侧模锁定

 理论分析了外腔较短情况下,宽条半导体二极管激光阵列（LDA）高阶侧模相位锁定的可能性,观察了包含主、旁瓣结构的多侧模远场光强分布。从实验记录结果可以看出,在旁瓣中出现了标志锁相的峰、谷结构,而且该结构的调制度明显高于主瓣中的峰、谷结构的调制度,结果表明：在外腔较短情况下,LDA高阶侧模相位锁定的现象是存在的。     

Broad bandwidth interference filter-stabilized external cavity diode laser with narrow linewidth below 100kHz

Interference filter-stabilized external cavity diode lasers(ECDLs) have properties of simple configurations, high stabilities, and narrow linewidths. However, the interference filter used in common ECDL designs requires an ultra-narrow bandwidth(about 0.3 nm) to achieve mode selection, that is considerably expensive and not yet available for a wide range of wavelengths. In this paper, a robust ECDL using an available broad bandwidth(about 4 nm) interference filter as the wavelength discriminator is constructed and tested. The ECDL demonstrated a narrow Lorentzian fitted linewidth of 95 kHz and a spectral purity of 2.9 MHz. The long-term frequency stability of the ECDL reaches 5.59×10~(-12).     

外腔中半导体二极管激光阵列的高阶侧模锁定

理论分析了外腔较短情况下,宽条半导体二极管激光阵列（LDA）高阶侧模相位锁定的可能性,观察了包含主、旁瓣结构的多侧模远场光强分布。从实验记录结果可以看出,在旁瓣中出现了标志锁相的峰、谷结构,而且该结构的调制度明显高于主瓣中的峰、谷结构的调制度,结果表明：在外腔较短情况下,LDA高阶侧模相位锁定的现象是存在的。     

体布拉格光栅外腔实现激光二极管阵列同相模输出

采用体布拉格光栅作为商用二极管激光阵列外腔,通过将每个单元发出的光反馈回相邻单元实现了外腔锁相。采用这种方法对发光单元宽度为100 μm、周期为200 μm,由49个单元构成的二极管阵列进行了外腔锁相实验,在远场获得了高光束质量、窄带宽的稳定输出。二极管激光阵列自由运转下功率为15 W,经外腔锁相后输出功率为3.67 W,对应光束远场发散角1.47 mrad, 光谱的峰值半宽由1.7 nm压窄到0.17 nm。     

Theoretical analysis on phase-locking properties of a laser diode array facing an external cavity

External coupling model has been used to describe the output field of a laser diode array (LDA) phase-locked with an external cavity. The analytical solution for the coupling matrix equation of the phase-locked system has been obtained. The dependencies of the threshold gain, g_j of the system mode on the residue reflection of the front facet, r_f and round trip external cavity lengths, L have been discussed. The working lengths of the external cavity for stably phase-locking the LDA of different residual reflectivities have been calculated.     

Study on a broad-area laser diode with external cavity feedback

The external cavity feedback of a broad-area laser diode is investigated. In Fourier optic methods, the inserted prism in an external cavity can be interpreted as a spatial filter in the Fourier plane of the laser diode. The transverse mode can be selected by changing the position of the filter. As the result of a self-consistency theoretical analysis, the output beam of the external cavity has a single-lobed far-field profile. It agrees well with the experiment result. The beam times-diffraction-limit-factor M² is measured to be 1.16.     

外腔锁相半导体激光器列阵的稳态分析

给出了描述半导体激光器列阵(LDA)稳定状态的非线性方程组。对非线性方程组进行了分析,研究了LDA在稳态运行时的特性。分别分析了LDA在同相模运行和反相模运行时,载流子浓度、振荡频率以及光子数密度与自由运行时相比较所发生的变化。     

0.02 nm带宽近衍射极限输出的双外腔反馈半导体激光器

实验研究了宽接触条形双外腔反馈半导体激光器,在该激光器的输出表面镀增透膜,反馈是由高反射率平面镜和闪耀光栅组成,通过调整平面镜和光栅的倾斜角度,使得特定的空间模式和纵模注入半导体激光器,使之产生振荡,并抑制了激光腔内振荡的其他横模和纵模数,从而输出单瓣近衍射极限的激光束。同时在腔内插入标准具,使得输出激光线宽达到0.02 nm,输出功率在150 mW。输出光束的光束质量因子M2为1.16。