Higher <Emphasis Type="Italic">η</Emphasis><Subscript>c</Subscript>(<Emphasis Type="Italic">nS</Emphasis>) and <Emphasis Type="Italic">η</Emphasis><Subscript>b</Subscript>(<Emphasis Type="Italic">nS</Emphasis>) mesons

The hyperfine splittings in heavy quarkonia are studied in a model-independent way using experimental data on dielectron widths. Relativistic correlations are taken into account together with the smearing of spin-spin interaction. The radius of smearing is fixed by known G/ψ−η _c(1S), ψ(2S)−η _c′(2S) splittings, which appears to be small, r _ss ≅ 0.06 fm. Nevertheless, even with such a small radius, substantial suppression of hyperfine splittings (∼50%) is observed in bottomonium. For nS b states (n = 1, 2, ..., 6), our predicted splittings (in MeV) are 28, 12, 10, 5, 6, 3. For the 3S and 4S charmonium states, the splittings 16(2) and 12(4) MeV are obtained. The text was submitted by the authors in English.     

Spectral-luminescent properties of AgLa<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Eu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>(MoO<Subscript>4</Subscript>)<Subscript>2</Subscript> solid solutions

The luminescent properties of AgLa_{1 − x} Eu _x (MoO₄)₂ (x = 0.1, 0.2, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1.0) under laser excitation (λ = 337.1 nm) are studied. It is shown that, upon substitution of Eu³⁺ for La³⁺, the symmetry of luminescence centers does not vary. According to the X-ray diffraction data, all samples have scheelite-like structure; the pattern of variation in volumes of their unit cells counts in favor of the presence of a continuous series of solid solutions. It is found that an increase in the europium concentration in AgLa_{1 − x} Eu _x (MoO₄)₂ leads to an increase in the luminescence intensity with a maximum at x = 0.9.     

Spectral-luminescent properties of LiRbLa<Subscript>2 − <Emphasis Type="Italic">x</Emphasis></Subscript>Eu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>(MoO<Subscript>4</Subscript>)<Subscript>4</Subscript> solid solutions

The luminescent properties of LiRbLa_{2 − x} Eu _x (MoO₄)₄ (x = 0.002, 0.02, 0.1, 0.2, 0.5, 1.0, 1.5, 2.0) solid solutions are investigated under laser excitation {λ_ex = 337.1 nm). It is established that the composition containing 50 at % Eu³⁺ is the brightest of the considered set of phosphors and has the highest quantum yield.     

Electronic structure and ground state parameters of Ru<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript><Emphasis Type="Italic">Me</Emphasis><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Al refractory alloys

The electronic structure and ground state parameters of B2 RuAl-based refractory alloys have been investigated in the framework of the density functional theory using the exact muffin-tin orbital method in combination with the coherent potential approximation. It has been demonstrated that the number of states at the Fermi level for the Ru_{1 − x} Me _x Al alloys as a function of the alloying metal content has a minimum, which indicates a change in the Fermi surface topology and the presence of specific features in the behavior of elastic constants. It has been concluded that the electronic structure of the alloys can be described in terms of the rigid band model. The nonlinear variations of the lattice parameters of the alloys has been explained.     

Analysis of structural defects in the CdSe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>1 – <Emphasis Type="Italic">x</Emphasis></Subscript> nanocrystals

Spectral dependence of the absorption coefficient of the CdSe _x S_{1 – x} nanocrystals in silicate glass with different perfections of crystalline lattice is experimentally studied. A dependence of the concentration of defects on the time of thermal processing is obtained. It is demonstrated that the defect elimination results from thermal activation process.     

Elasticity moduli of Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Te solid solutions

Results of investigations into the temperature dependences (4.2–300 K) of the low-frequency ultrasound velocity in Cd _x Hg_1–x Te single crystals are presented. The elastic moduli and the Debye temperatures are calculated for different solid solution compositions. Based on the data obtained, possible stresses are estimated on the heteroboundary of the materials with a number of substrates.     

Magnetostriction of Fe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>S (<Emphasis Type="Italic">x</Emphasis> = 0.27) crystals

The magnetostriction of Fe _x Mn_{1 − x} S (x = 0.27) single crystals in strong magnetic fields up to 120 kOe has been investigated. It has been found that the magnetostriction reaches colossal values (±3 × 10⁻⁴) atypical of compounds of 3d elements. It has been found that the magnetostriction changes sign when varying temperature and magnetic field; this behavior indicates an important role of the spin-phonon interactions in the formation of the magnetic order in solid solutions of iron-manganese sulfides.     

Short-Range order of TlIn<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Sn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te<Subscript>2</Subscript> thin films

The formation of the short-range order structure of amorphous nanometer-thick TlIn_1–x Sn _x Te₂ films (х = 0.02–0.09) obtained via vacuum deposition onto substrates of fresh KCl and KJ chips and celluloid at a temperature below Т = 213 K is studied by high-energy electron diffraction. Both freshly deposited films and films held in vacuum (10^–2 Pa) at room temperature in darkness for several months are studied. The effect of the tin concentration on the interatomic distances, the coordination numbers, and the time of amorphous phase stability of TlIn_1–x Sn _x Te₂ films due to a great spread in bond lengths and bond angles is established.     

Crystal structure and magnetic susceptibility of (CuInSe<Subscript>2</Subscript>)<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>(2MnSe)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

The crystal structure of samples in the (CuInSe₂)_{1 ? x} (2MnSe) _x system at room temperature and their magnetic susceptibility in the temperature range 77–1000 K are investigated. It is established that compositions with concentrations 0≤ x ≤ 0.2 form solid solutions with a tetragonal structure, space group I \(\bar 4\)2d (122). The specific magnetic susceptibility χ of samples with 0.1 ≤ x ≤ 0.4 at 77 K lies in the range 9 × 10^?4?1.6 × 10^t-3cm³/g. The temperature dependence of the inverse magnetic susceptibility of the sample with x = 0.4 suggests the presence of a component with antiferromagnetic ordering and a reliably measured Néel temperature that is characteristic of MnSe. The dependences χ = f(T) of the compositions with x = 0.1, 0.2, 0.3, and 0.4 indicate the occurrence of magnetic phase transitions with a change in the spin state.     

Growth and photoelectric properties of graded-gap Si-(Si<Subscript>2</Subscript>)<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>(GaP)<Subscript>x</Subscript> heterostructures

Theoretical grounds for formation of continuous substitutional solid solutions are analyzed taking into account the generalized moments, the difference in valence, and covalent radii of initial components. On the basis of these studies, the technology of formation of epitaxial (Si₂)_1?x(GaP)_t (0≤x≤1) layers on silicon substrates from the tin solution-melt using forced cooling is developed. The distribution of components over the thickness of Si-(Si₂)_1?x(GaP)_x layers, the photosensitivity, and the current-voltage characteristics of the Si-(Si₂)_1?x(GaP)_x heterostructures are studied. Analyses of the results of the X-ray studies and photoelectric properties of obtained solid-solution epitaxial layers indicate that the grown graded-gap (Si₂)_1?x(GaP)_x layers have a high structural quality.     

Magnetic capacitance of the Gd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Bi<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>FeO<Subscript>3</Subscript> thin films

The capacitance, inductance, and dissipation factor of the Gd _x Bi_1–x FeO₃ films were measured in the temperature range of 100 K < T < 800 K in magnetic fields of up to 8 kOe at frequencies of 0.1–100 kHz. The magnetic susceptibility maxima in the low-temperature region and dependences of the relaxation time and inductance on prehistory of the films cooled in zero and nonzero magnetic fields are established. The giant increase in magnetic capacitance in the external bias electric field is found. The results obtained are explained by the domain structure transformation in external electric and magnetic fields.     

Polarization characteristics of graded thick Ba<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Sr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>TiO<Subscript>3</Subscript> films

The barium strontium titanate ceramics Ba_{1 − x} Sr _x TiO₃ with a spatially variable composition has been prepared according to the thick film technology (tape casting). The strontium content over the film thickness is varied from 0 to 30 mol %. The structure and polarization characteristics of the samples prepared have been investigated. It has been found that the polarization characteristics of multilayer structures are determined by the ratio between the thicknesses of layers with different compositions and by their properties. No shift of the hysteresis loops in the graded thick Ba_{1 − x} Sr _x TiO₃ ( _x = 0–0.3) films has been revealed. The results obtained have been analyzed in the framework of modern theoretical approaches.     

High-temperature study of SrFe<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Mo<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>3−<Emphasis Type="Italic">z</Emphasis></Subscript> perovskites

The structure of high-temperature SrFe_{1 − x} Mo _x O_{3 − z} (0 ≤ x ≤ 0.5) phases was studied. Such studies are necessary to understand the mechanism of oxygen transport in membrane materials used for high-temperature oxygen separation.     

Structural study of CuCr<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>V<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>2</Subscript> substitutional solid solutions

The local structure and charged state of metal atoms in the CuCrS₂ matrix and CuCr_{1 − x} V _x S₂ solid solutions of substitution of vanadium for chromium (0 < x < 0.25) are studied by x-ray absorption spectroscopy (XAFS) using synchrotron radiation. According to XANES spectra (near-edge fine structures), introducing vanadium does not change the charged state of matrix elements and they exist as Cu(1+), Cr(3+), V(3+), and S(2−) in the solid solution. According to EXAFS spectra (extended fine structures), introducing vanadium slightly distorts the local structures of both Cr and Cu atoms (to a greater extent for copper than for chromium). The XAFS analysis data show that vanadium only partially filled vacant positions (specified by the composition of the initial mixture) in the chromium sublattice, the majority of them being located in irregular positions of slightly distorted octahedrons consisting of sulphur atoms. It is shown that the substitution effect leads to deformation (compression) of the lattices of CuCr_{1 − x} V _x S₂ samples without changing their crystallochemical structures and symmetries, but changes their magnetic structures.     

Rubidium-cation conductivity of Rb<Subscript>3–2<Emphasis Type="Italic">x</Emphasis></Subscript>Pb<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>PO<Subscript>4</Subscript> solid solutions

New Rb₃PO₄-based ceramic materials with high rubidium-cation conductivity in the Rb_3–2x Pb _x PO₄ system have been synthesized and studied. Introduction of Pb²⁺ cations leads to a sharp increase in the conductivity of rubidium orthophosphate due to formation of cation vacancies and, at temperatures 350–550°C, also due to the stabilization of high-temperature cubic modification Rb₃PO₄. At high temperatures, the electrolytes prepared have very high ion conductivity higher than 10^–1 S cm^–1 at 700°C, which is higher than the values previously obtained in similar systems with additions of tin and cadmium ions. The factors influencing the transport properties of the materials under study are discussed.     

Synthesis and magnetic and electrical study of Tm<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>Mn<Subscript>1–<Emphasis Type="Italic">x</Emphasis> </Subscript>S solid solutions

New antiferromagnetic semiconductor compounds Tm_xMn_1–xS (0 ≤ x ≤ 0.15) with an NaCl-type FCC lattice are synthesized, and their structural, magnetic, and electrical properties are investigated at temperatures of 80–1100 K in magnetic fields of up to 10 kOe. Anomalies in the temperature dependence of resistivity in the region of magnetic transition are observed. The activation energy of the synthesized compounds is found and shown to grow along with the concentration of a substitute.     

Magnetic properties of single crystals of the Cr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>S solid solutions (0 ≤ <Emphasis Type="Italic">x</Emphasis> < 0.3)

The Cr _x Mn_{1 − x} S single crystals have been synthesized based on manganese monosulfide as a result of cation substitution, and their magnetic properties have been studied. It has been established that the Cr _x Mn_{1 − x} S solid solutions with a face-centered cubic NaCl structure are formed in the concentration region 0 ≤ x < 0.3. The unit cell parameter of the solid solution decreases as the degree of substitution increases due to the variation in the ionic radius of cations. These substances are antiferromagnets. An increase in the degree of cation substitution in the Cr _x Mn_{1 − x} S solid solutions is accompanied by a decrease in the number of 3d electrons in the d shell of manganese monosulfide and causes a decrease in the magnetic transition temperature from 149 K (x = 0) to 96 K (x = 0.29), which differs from previously known results.     

X-ray spectra and electronic band structure of nitrogen in Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>N solid solid solutions

The electronic energy structure of the valence band and the x-ray absorption near edge structure (XANES) region of nitrogen in Al _x Ga_1?x N solid solutions and binary crystals of gallium nitride GaN and aluminum nitride AlN are calculated using the local coherent potential method and the cluster version of the muffin-tin approximation within the framework of the multiple scattering theory. It is demonstrated that the calculated electron densities of states correlate with the nitrogen K x-ray emission and nitrogen K x-ray absorption spectra. The electronic energy structure of the top of the valence band and the XANES region in Al _x Ga_1?x N solid solutions are compared with those in the binary crystals of the GaN and AlN nitrides, and an interpretation of their specific features is proposed. An analogy is drawn between the evolution of the electronic energy structure of the valence band and the XANES region in the alloys under investigation and the evolution of the electronic band structure in the Al _x B_1?x N and B _x Ga_1?x N alloys. General trends in the transformation of the structure and variations in properties of these alloys are discussed.     

Short-range order in Fe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>(<Emphasis Type="Italic">x</Emphasis>=0.05−0.08) alloys with induced magnetic anisotropy

Previously, iron—silicon alloys were investigated using X-ray diffraction and Mössbauer spectroscopy. It was demonstrated that, at low silicon concentrations, the alloys undergo a local separation into regions of the α iron phase depleted in silicon and silicon-rich clusters with a B2 ordering. The structure of locally ordered regions of the B2 phase is characterized by a pair ordering of silicon atoms: the Si—Si pairs are formed by next-nearest neighbors, and the axes of pairs are oriented along the 〈100〉 directions, which are the easy-magnetization axes. The thermomagnetic treatment in a constant magnetic field applied along the 〈100〉 axis induces an axial magnetic anisotropy, results in the formation of an anisotropic distribution of the B2 phase, and leads to a slight decrease in the volume fraction of the coordination 6: 2 with two silicon atoms in the first coordination shell of the iron atom. Therefore, the formation of an anisotropic local order of pairs of silicon atoms occurs as a result of their reorientation.