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1.
In this work, we develop a theory of thermoelectric transport properties in two-dimensional semiconducting quantum well structures. Calculations are performed for n-type 0.1 wt.% CuBr-doped Bi2Se3/Bi2Te3/Bi2Se3 and p-type 3 wt.% Te-doped Sb2Te3/Bi2Te3/Sb2Te3 quantum well systems in the temperature range 50–600 K. It is found that reducing the well thickness has a pronounced effect on enhancing the thermoelectric figure of merit (ZT). For the n-type Bi2Se3/Bi2Te3/Bi2Se3 with 7 nm well width, the maximum value of ZT is estimated to be 0.97 at 350 K and for the p-type Sb2Te3/Bi2Te3/Sb2Te3 with well width 10 nm the highest value of the ZT is found to be 1.945 at 440 K. An explanation is provided for the resulting higher ZT value of the p-type system compared to the n-type system.  相似文献   

2.
The temperature dependence of the Raman spectra of Bi2Te3 and Bi0.5Sb1.5Te3 thermoelectric films was investigated. The temperature coefficients of the Eg(2) peak positions were determined as –0.0137 cm–1/°C and –0.0156 cm–1/°C, respectively. The thermal expansion of the crystal caused a linear shift of the Raman peak induced by the temperature change. Based on the linear relation, a reliable and noninvasive micro‐Raman scattering method was shown to measure the thermal conductivity of the thermoelectric films. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

3.
The film of thermoelectric ternary p-type (Bi0.15Sb0.85)2Te3 was deposited on polyimide foil substrate at 168 °C using direct-current magnetron sputtering. Microstructural investigations of the film were performed by electron microscopy techniques. SEM observations showed that the film surface consisted of large-sized particulates with small-sized particles and also mound-like crystal agglomerates in some areas. Chemical composition of the film was analyzed using energy-dispersive X-ray spectrometer (EDS). It has been observed that the EDS results were in an agreement with nominal composition for the film. Detailed microstructural investigations were carried out using transmission electron microscopy (TEM). TEM images and selected area electron diffraction patterns showed that the film has randomly oriented polycrystalline grain structure. High-resolution TEM images indicated that the microstructure of film also contained nano-crystal structure, smaller than 10 nm.  相似文献   

4.
5.
The free carrier concentration of the Sb2−xInxTe3, Bi2−xInxTe3 and Bi2Te3−xSx crystals has been determined from the values of the Hall constants and the free carrier concentration of the Sb2−xTlxTe3 has been calculated from the plasma resonance frequency; with increasing value of x, the hole concentration decreases. As the incorporation of the elements In, Tl and S into the lattice Sb2Te3 or Bi2Te3, respectively, gives rise to the uncharged defects InxSb, TlxSb, InxBi and SxTe, the x causes the decrease of the antisite defects concentration. The proven effect is explained in the following way: the antisite defects can be created only in crystals whose atoms are bound by weakly polarized bonds. The incorporation of In, Tl and S atoms into the crystal lattice of Sb2Te3 or Bi2Te3 increases the bond polarity, the ionicity of ternary crystals increases. This unfavorably affects the increase of antisite defects whose concentration decreases. The change of the bond polarity is considered from the changes discovered in the formation energy of antisite defects of the above mentioned ternary crystals.  相似文献   

6.
7.
This paper presents ambient and high pressure measurements of transport properties of the Bi2Te3–Sb2Te3 series of materials. The electrical resistivity, thermal conductivity, and Seebeck coefficient have been measured on both end compounds and the direct solid solution of the two at pressure up to 10 GPa. An additional discussion involving the high pressure structure will be presented. From this, it was determined that these materials undergo at least two structural phase transitions between 0 and 20 GPa and a discussion is presented regarding this and the changes in the transport properties.  相似文献   

8.
The low field susceptibility versus temperature has been studied for the series of colossal magnetoresistive (CMR) manganites Ln0.7Ca0.3−xSrxMnO3 (LnPr, x = 0.10, 0.05, 0; LnNd, x = 0). The effect of the average size of the interpolated cation upon Tc is confirmed for the larger sizes (LnPr, x = 0.10, 0.05) showing a classical ferromagnetic behavior at low temperature in agreement with the neutron diffraction studies. For a smaller size of the A-site cation (LnPr or Nd, x = 0) an original behavior is observed: the χ(T) curves show a spin-glass-like behavior with a cusp at Tcusp, whereas the neutron diffraction data in zero magneteic field evidence a ferromagnetic component starting around Tcusp.  相似文献   

9.
Sr-doped Ba0.7La0.3TiO3(BSLTO)thin films are deposited by pulsed laser deposition,and their microstructure,conductivity,carrier transport mechanism,and ferroelectricity are systematically investigated.The x-ray diffraction measurements demonstrate that Sr-doping reduces the lattice constant of BSLTO thin films,resulting in the enhanced phonon energy in the films as evidenced by the Raman measurements.Resistivity-temperature and Hall effect measurements demonstrate that Sr can gradually reduce electrical resistivity while the electron concentration remains almost unchanged at high temperatures.For the films with semiconducting behavior,the charge transport model transforms from variable range hopping to small polaron hopping as the measurement temperature increases.The metalic conductive behaviors in the films with Sr=0.30,0.40 conform to thermal phonon scattering mode.The difference in charge transport behavior dependent on the A-site cation doping,is clarified.It is revealed that the increasing of phonon energy by Sr doping is responsible for lower activation energy of small polaron hopping,higher carrier mobility,and lower electrical resistivity.Interestingly,the piezoelectric force microscopy(PFM)results demonstrate that all the BSLTO films can exhibit ferroelectricity,especially for the room temperature metallic conduction film with Sr=0.40.These results imply that Sr-doping could be a potential way to explore ferroelectric metal materials for other perovskite oxides.  相似文献   

10.
张辉  曾德长 《物理学报》2010,59(4):2808-2814
研究了Terfenol-D材料中巨磁致伸缩的逆效应,即磁机械效应.基于Stoner-Wohlfarth(SW)模型,考虑磁晶各向异性和应力各向异性能,依据自由能极小原理,获得了退磁态下Terfenol-D单晶中磁化强度方向和压应力的关系.采用数值方法求解了平衡条件下的非线性方程组.理论结果表明,Terfenol-D巨磁致伸缩单晶中的磁各向异性取决于磁晶各向异性和应力各向异性之间的竞争.在压应力的作用下,Terfenol-D单晶中的磁各向异性由立方向单轴转变.理论和实验结果的比较表明,存在一个临界压应力,使磁致伸缩效应达到极大值.该理论结果还解释了压应力使得Terfenol-D单晶材料难于磁化和磁致伸缩效应出现极大值的实验事实.理论计算不仅为研究这类问题提供了一个更准确的方法,而且其结果也有助于理解类似材料中的磁化过程. 关键词: Terfenol-D 磁机械效应 巨磁致伸缩效应 磁各向异性  相似文献   

11.
采用机械合金化法制备了p型赝三元(Sb2Te3-Bi2Te3-Sb2Se3)合金粉体,对其进行XRD分析表明Te,Bi,Sb,Se单质粉末,经100h球磨后实现了合金化;SEM分析表明所得机械合金化粉体材料颗粒均匀、细小,颗粒尺寸在10nm到100nm量级.使用这种粉体制备了冷压烧结块体样品,在室温下测量了温差电动势率(α)和电导率(σ),研究了烧结温度对材料热电性能的影响,结果表明在低于300℃的烧结温区,样品室温下的热电性能随烧结温度的升高不断提高,功率因子(α2σ)由未烧结样品的0.59μW cm-1K-2升高到在300℃下烧结样品的15.9μW cm-1K-2,这一结果对确定材料的最佳烧结温度具有重要意义. 关键词: 赝三元热电材料 机械合金化 冷压 烧结  相似文献   

12.
The thermal conductivity of (La0.25Pr0.75)0.7Ca0.3MnO3 manganite has been studied. The isotope substitution of 18O for 16O in this compound leads to a ferromagnetic-antiferromagnetic phase transition at low temperatures. It has been found that the thermal conductivity in the ferromagnetic state is approximately two times higher than in the antiferromagnetic state. It has been shown that the small value of thermal conductivity and its temperature dependence can be due to strong phonon scattering from crystal lattice defects, which are thought of as Jahn-Teller distortions. The parameters of this scattering can be determined within the Debye model of thermal conductivity from a comparison of samples differing in their isotope composition.  相似文献   

13.
Tunneling measurements of dI/dV, d 2 I/dV 2, and d 3 I/dV 3 were formed along the C 3 axis (normally to layers) for Bi2Te3 and Sb2Te3 layered semiconductors in the temperature range 4.2<T>29 5 K. Temperature dependences of the forbidden band energy E g were obtained. The forbidden band energy in Bi2Te3 was 0.20 eV at room temperature and increased to 0.24 eV at T=4.2 K. The E g value for Sb2Te3 was 0.25 eV at 295 K and 0.26 eV at 4.2 K. The distance between the top of the higher valence band of light holes and the top of the valence band of heavy holes situated lower was found to be ΔE V≈19 meV in Bi2Te3; this distance was independent of temperature. The conduction bands of Bi2Te3 and Sb2Te3 each contain two extrema with distances between them of ΔE c≈25 and 30 meV, respectively.  相似文献   

14.
The change of the lattice thermal conductivity of bulk nanostructured materials based on Bi2Te3-Sb2Te3 solid solutions with grain size distribution has been studied. These materials have a polycrystalline structure with grain sizes ranging from a few tens of a nanometer to a few micrometers. Large grains may contain inclusions or consist of several smaller parts which can be identified with coherent scattering regions seen in X-ray diffraction. The change of the lattice thermal conductivity mediated by additional scattering by inclusions and grain boundaries has been calculated. This calculation allows for the effect of nanoparticle size distribution. The calculated estimates are compared with the available experimental data.  相似文献   

15.
王善禹  谢文杰  李涵  唐新峰 《物理学报》2010,59(12):8927-8933
采用熔体旋甩结合放电等离子烧结(MS-SPS)技术制备了单相n型四元(Bi0.85Sb0.15)2(Te1-xSex)3(x=0.15,0.17,0.19,0.21)化合物,并对所得样品的微结构和热电传输性能进行了系统研究.样品自由断裂面的场发射扫描电子显微镜及抛光面的背散射电子成分分析表明:块体材料晶粒细小,晶粒排列紧密,成分分布均匀且相结构单一,样品中存在大量10—100nm的层状结构.随着Se含量x的增加,样品的电导率和热导率逐渐增加,而Seebeck系数逐渐降低.相比商业应用的区熔材料,MS-SPS方法合成的高Se组成的样品均在425K后表现出更高的ZT值,其中(Bi0.85Sb0.15)2(Te0.83Se0.17)3样品具有最高的ZT值,在360K可达到0.96,并在320—500K均保持较高的ZT值,500K时其ZT值相比区熔材料提高了48%.此外,通过调节Se的含量,可以有效地调控材料的ZT峰值出现的温度段,这对多级或梯度热电器件的制备具有重要意义.  相似文献   

16.
采用磁控三靶(Si,Sb及Te)共溅射法制备了Si掺杂Sb2Te3薄膜,作为对比,制备了Ge2Sb2Te5和Sb2Te3薄膜,并且采用微加工工艺制备了单元尺寸为10μm×1Oμm的存储器件原型来研究器件性能.研究表明,Si掺杂提高了Sb2Te3薄膜的晶化温度以及薄膜的晶态和非晶态电阻率,使得其非晶态与晶态电阻率之比达到106,提高了器件的电阻开/关比;同Ge2Sb2Te5薄膜相比,16at%Si掺杂Sb2Te3薄膜具有较低的熔点和更高的晶态电阻率,这有利于降低器件的RESET电流.研究还表明,采用16at%Si掺杂Sb2Te3薄膜作为存储介质的存储器器件原型具有记忆开关特性,可以在脉高3V、脉宽500 ns的电脉冲下实现SET操作,在脉高4 V、脉宽20 ns的电脉冲下实现RESET操作,并能实现反复写/擦,而采用Ge2Sb2Te5薄膜的相同结构的器件不能实现RESET操作.  相似文献   

17.
Abstract

Single crystals of (Sb0.75Bi0.25)2-xMnxTe3 (x = 0.0–0.05) were characterized by X-ray diffraction, measurements of reflectance in the plasma resonance frequency region, Hall coefficient, electrical conductivity, and Seebeck coefficient. It was found that Mn atoms in the crystal structure of Sb1.5Bi0.5Te3 behave like acceptors; the increase in the hole concentration is explained by the formation of substitutional defects of Mn'Sb and Mn'Bi in the crystal lattice of the studied crystals.  相似文献   

18.
《Current Applied Physics》2015,15(3):261-264
Bismuth telluride (Bi2Te3) thin films were electrodeposited at room temperature from nitric baths in the presence of a surfactant, cetyltrimethylammonium bromide (CTAB). Nearly stoichiometric Bi2Te3 thin films were obtained from electrolytes containing 7.5 mM Bi(NO3)3. The surface morphology and mechanical properties of the electrodeposited thin film were improved by the addition of CTAB to the electrolyte, while the electrical and thermoelectric properties were preserved. Post-deposition annealing in a reducing environment did not improve the electrical and thermoelectric properties, possibly because the change in the microstructure of the Bi2Te3 thin film was too small.  相似文献   

19.
The regularities of changes in the optical properties of crystals of Bi2Te3-Sb2Te3 solid solutions in the range of the effects caused by free-carrier plasma oscillations at a variation in the ratio of Bi2Te3 and Sb2Te3 components are investigated. It is established that, when the Sb2Te3 content in a solid solution exceeds 80 mol %, the fundamental absorption edge undergoes plasma screening. Doping a Sb2Te3 crystal with tin increases the free-carrier concentration and plasma frequencies, thus enhancing the screening effect, whereas introduction of 0.1 mol % selenium reduced the plasma frequency and thus removes the fundamental-absorption-edge screening.  相似文献   

20.
A new approach to the study of phase separation in lanthanum manganites is proposed based on the combined investigation of their optical and magnetooptical characteristics providing information about the conducting and ferromagnetic regions, respectively. Effects of the 18O isotope substitution for 16O in the epitaxial films of (La0.5Pr0.5)0.7Ca0.3MnO3 (grown on SrTiO3 or LaAlO3 substrates) upon the IR absorption spectra and the equatorial Kerr effect measured in the 1.5–3.8 eV range were studied. A giant drop in the temperature of maximum resistance of the film grown on SrTiO3 and disappearance of the metal-insulator transition in the film on LaAlO3, observed upon the isotope exchange, are accompanied by a decrease in the contribution of free charge carriers to the absorption spectra, by the appearance of bands due to localized states, and by a decrease in magnitude of the equatorial Kerr effects. Measurements of the Kerr effect and the temperature variation of the optical transmission show evidence of the presence of ferromagnetic metal regions in the 18O-isotope-substituted (La0.5Pr0.5)0.7Ca0.3MnO3/LaAlO3 film at low temperatures, with a general semiconductor character of the resistivity behavior in the entire temperature range studied. Changes observed in the absorption spectra are explained based on a model of the pseudo-Jahn-Teller polar centers and phase separation. The optical and magnetooptical data show evidence of a percolation nature of the giant isotope effect in manganites.  相似文献   

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