共查询到20条相似文献,搜索用时 15 毫秒
1.
Kögler R. Eichhorn F. Kaschny J.R. Mücklich A. Reuther H. Skorupa W. Serre C. Perez-Rodriguez A. 《Applied Physics A: Materials Science & Processing》2003,76(5):827-835
Nanometer-sized SiC precipitates were synthesized in situ in Si by simultaneous implantation of two ion beams of C+ and Si+ ions. The results of simultaneous dual-beam implantation are compared with those of sequential dual-beam ion implantation
and of single-beam C+ ion implantation. Remarkable differences are observed regarding the content and the crystal quality of SiC precipitates as
well as the defect structure of the Si substrate. The SiC precipitation during dual-beam synthesis is found to depend on the
ion energy of the second beam and on the implantation mode, simultaneous or sequential. For suitable implantation conditions,
simultaneous dual-beam synthesis can improve the in situ SiC formation in comparison to the single-beam synthesis. A higher
density of SiC precipitates with better crystal quality was observed, whereas their size was not changed. The second ion beam
enables a shift in the dynamic equilibrium of constructive and destructive processes for SiC formation. A model is proposed
assuming that SiC precipitation preferentially proceeds in regions with vacancy defects. The implantation process itself creates
vacancy-dominated and also interstitial-dominated regions. The balance of the local point-defect composition is shifted under
the second ion beam. In this way, the conditions for SiC precipitation can be modified.
Received: 18 February 2002 / Accepted: 17 May 2002 / Published online: 17 December 2002
RID="*"
ID="*"Corresponding author. Fax: +49-351/260-3411, E-mail: koegler@fz-rossendorf.de 相似文献
2.
J. Wang Z. Li W. Cai Z. Miao P. Chen X. Chen W. Lu 《Applied Physics A: Materials Science & Processing》2003,76(6):975-978
Raman spectroscopy was used to study the evolution of host lattice recrystallization in Mn+-implanted GaAs. A high dose of Mn+-ions (>1015 cm-2) was introduced into semi-insulating GaAs by the combinatorial implantation method. Subsequent thermal annealing at 920 °C
was carried out to re-grow the implantation-induced amorphous layers. The dependence of the recrystallization behavior on
the Mn content was systematically observed. The lattice orientation of recrystallized layers in the surface changed after
high-dose implantation (>1.6×1015 cm-2) and annealing. The size of the recrystallized crystallites decreased with increasing Mn+ dose, as indicated by images from atomic force microscopy. The decrease in the phonon frequency of the Raman lines with the
size reduction of microcrystals was in good agreement with the spatial correlation model. However, at higher doses (>7×1016 cm-2), a blue shift of the frequency was observed due to the compressive stress exerted on the microcrystals.
Received: 5 March 2002 / Accepted: 29 August 2002 / Published online: 8 January 2003
RID="*"
ID="*"Corresponding author. Fax: +86-21/658-30734, E-mail: jqwang@mail.sitp.ac.cn 相似文献
3.
P.J. Simpson A.P. Knights K. Dudeck S. Ruffell B. Terreault 《Applied Surface Science》2008,255(1):63-67
Despite decades of study, voids in silicon produced by implantation of H or He followed by annealing continue to be a topic of interest. There are two key applications: gettering of heavy metal impurities, and “ion cutting” used in silicon-on-insulator fabrication. Positron annihilation is one of the few techniques that can probe the vacancies and vacancy clusters that are the precursors to void formation. Data from recent studies will be discussed, including (I) isotopic substitution, in which comparisons of H vs. D implantation permit examination of the impact of primary point defects vs. chemical effects. Remarkable differences exist between H and D in blistering of silicon - ion doses 2-3 times higher are required for blistering with D than with H, despite a higher rate of primary defect production for D; (II) the effect of annealing temperature ramp-rate, in which we show that ramp-rate has a significant impact on residual defects, despite which it is so disregarded as to often be omitted from published reports; and (III) comparisons with electron microscopy which suggest that positron annihilation can be insensitive to large voids. In these studies, positron annihilation augments data from techniques including ion channelling, Raman scattering and electron microscopy; the suite of techniques allows elucidation of the interplay between implanted impurities and the vacancies and interstitials created by implantation. 相似文献
4.
Transient effects on diffusion and activation during post-implantation anneals are a major obstacle for the further miniaturization
of ultra-large-scale integrated semiconductor devices. The article reviews recent developments in the simulation of such phenomena
with particular emphasis on models for the kinetics of self-interstitial agglomerates and boron–interstitial clusters.
Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003
RID="*"
ID="*"Corresponding author. Fax: +49-9131/761-212, E-mail: pichler@iis-bfhg.de 相似文献
5.
L.-W. Yin M.-S. Li Z.-G. Gong Z.-Y. Hao 《Applied Physics A: Materials Science & Processing》2003,76(7):1079-1084
A type of synthetic diamond single crystal about 0.4–0.5 mm in dimension prepared under high pressure–high temperature (HPHT)
in the presence of a FeNi molten catalyst was quenched from HPHT and irradiated with 300 keV electrons at room temperature.
Transmission electron microscopy was employed to examine the microstructure of the diamond single crystal before and after
electron irradiation. It was found that there exists a large amount of cellular interfaces in the quenched diamond sample,
which indicates the growth condition of the diamond under HPHT. Hexagonal dislocation loops about several tens of nanometers
in dimension were observed in the high-pressure-synthesized diamond single crystal before electron irradiation, which strongly
suggests that a number of vacancies were quenched-in due to rapid quenching from high temperature at the end of diamond synthesis,
and were aggregated in the synthetic diamond to form vacancy disks on the (111) plane, the collapse of such vacancy disks
forming vacancy-type dislocation loops. After electron irradiation, it was found that defect clusters present as interstitial-character
dislocation loops were formed in the electron-irradiated region of the diamond. The interstitial dislocation loops grow with
increase of the irradiation time. The present study, in comparison to previous work on ion implantation on diamond, indicates
that electron irradiation does not induce a phase transformation but produces interstitial dislocation loops due to the migration
of interstitial atoms and vacancies. The result of the study directly indicates that interstitials and vacancies in diamond
are mobile at room temperature under electron irradiation. Nitrogen, as the most important kind of impurity contained in the
HPHT as-grown diamond, probably acts as nucleation of the interstitial loops.
Received: 16 November 2001 / Accepted: 12 June 2002 / Published online: 17 December 2002
RID="*"
ID="*"Corresponding author. E-mail: yinlw@sdu.edu.cn 相似文献
6.
Depending on the implantation temperature, the implantation of carbon ions into silicon at high doses results in the formation
of either amorphous SiCx or crystalline 3C-SiC precipitates. Various aspects of the precipitation behaviour observed, such as the impeded nucleation,
the limited growth and the resulting sensitivity to ballistic destruction are attributed to the large interfacial energy between
crystalline silicon and 3C-SiC. Periodically arranged amorphous SiCx nanoclusters, which are formed at lower temperatures, are shown to promote amorphisation by their surrounding stress field
and to represent sinks for silicon self-interstitials, which can be activated by annealing at 900 °C. By control of the depth
distribution of equally sized, oriented 3C-SiC precipitates formed at higher implantation temperatures, it is possible to
establish suitable starting conditions for the formation of buried homogeneous, single-crystalline 3C-SiC layers during a
post-implantation anneal. The properties of these ion-beam-synthesised SiC layers are described and attempts to combine them
with insulating and metallic layers are reviewed. A survey is given of the emerging applications of ion-beam-synthesised buried
SiC layers and microstructures in electronic, optical and micromechanical devices and as large-area SiC pseudosubstrates.
Received: 11 November 2002 / Accepted: 12 November 2002 / Published online: 4 April 2003
RID="*"
ID="*"Corresponding author. Fax: +49-821/598-3425, E-mail: lindner@physik.uni-augsburg.de 相似文献
7.
M. Takai W. Jarupoonphol C. Ochiai O. Yavas Y.K. Park 《Applied Physics A: Materials Science & Processing》2003,76(7):1007-1012
Localized physical and chemical reactions induced by focused ion and electron beams, i.e. dual beams, have been used to fabricate
field emitters (FEs) and their arrays, field-emitter arrays (FEAs), without masking and annealing processes. Issues arising
from beam processing such as beam-induced damage and contamination were eliminated to provide FEAs with low leakage current.
Quick prototyping and repairing processes of FEs and FEAs using dual-beam processing have been demonstrated.
Nb- or Au-gated Pt FEAs have been fabricated using dual beams. The fabricated FEAs showed a turn-on voltage of 40 V for field
emission with a typical emission current of about 1 μA/tip.
Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003
RID="*"
ID="*"Corresponding author. Fax: +81-6/6850-6662, E-mail: takai@rcem.osaka-u.ac.jp 相似文献
8.
Jaiswal S.L. Simpson J.T. Withrow S.P. White C.W. Norris P.M. 《Applied Physics A: Materials Science & Processing》2003,77(1):57-61
The recent observation of optical gain from silicon nanocrystals embedded in SiO2 opens an opportunity to develop a nanoscale silicon-based laser. However, the challenge remains to design and develop a laser
architecture using CMOS-compatible materials. In this paper we present two designs for a waveguide laser in which silicon
nanocrystals embedded in SiO2 are used as the optical gain media. One design employs a SiO2 membrane containing encapsulated Si nanocrystals. Preliminary calculations given here show that a highly resonant laser cavity
can be produced in a SiO2 membrane using sub-wavelength structures. This photonic crystal architecture, used to guide and contain the light, can be
combined with a gain medium of optically active Si nanocrystals synthesized in the SiO2 membrane using ion implantation/thermal annealing to produce a Si-based laser. The laser cavity dimensions can be matched
to the near-infrared wavelengths where optical gain has been observed from Si nanocrystals. The second design utilizes silicon
nanocrystals embedded in a distributed-feedback laser cavity fabricated in SiO2. Lasing action over a broad wavelength range centered at ∼770 nm should be possible in both of these configurations.
Received: 20 December 2002 / Accepted: 7 January 2003 / Published online: 11 April 2003
RID="*"
ID="*"Corresponding author. Fax: +1-434/982-2037, E-mail: supriya@virginia.edu 相似文献
9.
Y. Chen M.J. Conway J.D. Fitzgerald 《Applied Physics A: Materials Science & Processing》2003,76(4):633-636
Multi-walled carbon nanotubes with cylindrical and bamboo-type structures are produced in a graphite sample after mechanical
milling at ambient temperature and subsequent thermal annealing up to 1400 °C. The ball milling produces a precursor structure
and the thermal annealing activates the nanotube growth. Different nanotubular structures indicate different formation mechanisms:
multi-wall cylindrical carbon nanotubes are probably formed upon micropores and the bamboo tubes are produced because of the
metal catalysts. A two-dimensional growth governed by surface diffusion is believed to be one important factor for the nanotube
growth. A potential industrial production method is demonstrated with advantages of large production quantity and low cost.
Received: 17 May 2002 / Accepted: 12 September 2002 / Published online: 4 December 2002
RID="*"
ID="*"Corresponding author. Fax: +61-2/6125-8338, E-mail: ying.chen@anu.edu.au 相似文献
10.
A relation between a metallic film covering on diamond formed during growth and nanosized inclusions in HPHT as-grown diamond single crystals 总被引:3,自引:0,他引:3
L.-W. Yin M.-S. Li Z.-G. Gong Y.-J. Bai F.-Z. Li Z.-Y. Hao 《Applied Physics A: Materials Science & Processing》2003,76(7):1061-1065
One of the most important characteristics and basic phenomena during diamond growth from liquid metal catalyst solutions saturated
with carbon at high temperature–high pressure (HPHT) is that there exists a thin metallic film covering on the growing diamond,
through which carbon-atom clusters are delivered to the surface of the growing diamond by diffusion. A study of microstructures
of such a metallic film and a relation between the thin metallic film and the inclusions trapped in HPHT as-grown diamond
single crystals may be helpful to obtain high-purity diamond single crystals. It was found that both the metallic film and
the HPHT as-grown diamond single crystals contain some nanostructured regions. Examination by transmission electron microscopy
suggests that the microstructure of the thin metallic film is in accordance with nanosized particles contained in HPHT as-grown
diamond single crystals. The nanosized particles with several to several tens of nanometers in dimension distribute homogeneously
in the metallic film and in the diamond matrix. Generally, the size of the particles in the thin metallic film is relatively
larger than that within the diamond matrix. Selected area electron diffraction patterns suggest that the nanosized particles
in the metallic film and nanometer inclusions within the diamond are mainly composed of f.c.c. (FeNi)23C6, hexagonal graphite and cubic γ-(FeNi). The formation of the nanosized inclusions within the diamond single crystals is thought
not only to relate to the growth process and rapid quenching from high temperature after diamond synthesis, but also to be
associated with large amounts of defects in the diamond, because the free energy in these defect areas is very high. The critical
size of carbide, γ-(FeNi)and graphite particles within the diamond matrix should decrease and not increase according to thermodynamic
theory during quenching from HPHT to room temperature and ambient pressure.
Received: 13 September 2001 / Accepted: 12 June 2002 / Published online: 17 December 2002
RID="*"
ID="*"Corresponding author. Fax: +86-0531/295-5081; E-mail: yinlw@sdu.edu.cn 相似文献
11.
Crystal structure, morphology, depth profile of elements and mid-infrared optical constants of ‘mild’ lead telluride film 总被引:1,自引:0,他引:1
B. Li S. Zhang F. Zhang L. Zeng 《Applied Physics A: Materials Science & Processing》2003,76(6):965-968
The characterizations of a so-called ‘mild’ PbTe layer thermal-evaporated from an excess of Te (<1 mol.%) evaporable materials
are reported. The results reveal that the film obtained is polycrystalline and has a single-phase NaCl-type PbTe crystal structure.
It is also demonstrated that the film has a homogeneous surface morphology and a high degree of homogeneous distribution of
Te-rich components along the layer. The study of mid-infrared optical constants of a surface-polished film indicates that
the influence of surface scattering on optical properties is very small.
Received: 3 July 2002 / Accepted: 7 August 2002 / Published online: 4 December 2002
RID="*"
ID="*"Corresponding author. Fax: +86-21/6516-9946, E-mail: lbincome@yahoo.com 相似文献
12.
This paper deals with the implantation of high-energy (1.0–3.0 MeV) atomic and molecular Al+ ions in Si(100) to a fluence of 5×1014 Al atoms/cm2 at room temperature. The molecular effect, i.e. the increase of the displacement yield compared with the sum of the atomic
yields, and the damage formation as well as defect behaviour after annealing have been investigated. A detailed experimental
study has been made of the evolution of extended secondary defects which form during thermal anneals of Al+ or Al2
+ irradiated silicon. The samples have been examined using combined Rutherford backscattering and channeling experiments together
with transmission electron microscopy observations. The surface structure of the implanted wafers has been measured by atomic
force microscopy. The results for the implantation-induced roughness at the Si surface, resulting from Al+ or Al2
+ irradiation at the same energy/atom, total atomic fluence, flux rate, and irradiation temperature, are presented and discussed.
Received: 19 August 1999 / Accepted: 20 October 1999 / Published online: 23 February 2000 相似文献
13.
S. Kaschieva L. Rebohle W. Skorupa 《Applied Physics A: Materials Science & Processing》2003,76(5):823-826
The effect of gamma irradiation on the interface states of ion-implanted MOS structures is studied by means of the thermally
stimulated charge method. 10-keV oxygen- or boron- (O+ or B+) implanted samples are gamma-irradiated with 60Co. Gamma irradiation creates electron levels at the SiSiO2 interface of the samples in a different way depending on the type of the previously implanted atoms (O+ or B+). The results demonstrate that the concentration of the shallower levels (in the silicon band gap) of oxygen-implanted samples
increases more effectively after gamma irradiation. The same irradiation conditions increase more intensively the concentration
of the deeper levels (in the silicon band gap) of boron-implanted samples.
Received: 17 June 2002 / Accepted: 31 August 2002 / Published online: 8 January 2003
RID="*"
ID="*"Corresponding author. Fax: +359-2/975-3236, E-mail: kaschiev@issp.bas.bg 相似文献
14.
C.H. Chen T. Kiguchi A. Saiki N. Wakiya K. Shinozaki N. Mizutani 《Applied Physics A: Materials Science & Processing》2003,76(6):969-973
In order to qualitatively and quantitatively analyze the structural defects including the defect types and their concentrations
in oxide heteroepitaxial films, a new X-ray rocking-curve width-fitting method was used in the case of doubleCeO2/YSZ/Si (YSZ=yttria-stabilized ZrO2) films that were prepared by pulsed laser deposition. Two main defect types, angular rotation and oriented curvature, were
found in both CeO2 and YSZ. Dislocation densities of CeO2 and YSZ, which were obtained from the angular rotations, are functions of the YSZ thickness. A distinct two-step correlation
between dislocation densities of CeO2 and YSZ was found that as the dislocation density of YSZ is higher than 2.4×1011 cm-2, the dislocation density of CeO2 shows a high sensitivity with that of YSZ compared with the low relativity in lower dislocation density (<2.4×1011 cm-2). In addition, YSZ always has higher dislocation densities and oriented curvatures than CeO2 in each specimen, which can be attributed to the smaller mosaic domain sizes in YSZ than in CeO2 as observed by high-resolution transmission electron microscopy.
Received: 12 August 2002 / Accepted: 14 August 2002 / Published online: 4 December 2002
RID="*"
ID="*"Corresponding author. Fax: +81-3/5734-3369, E-mail: chun_hua_chen@hotmail.com 相似文献
15.
S. Milita Y. Le Tiec E. Pernot L. Di Cioccio J. Härtwig J. Baruchel M. Servidori F. Letertre 《Applied Physics A: Materials Science & Processing》2002,75(5):621-627
A new process was recently developed to manufacture silicon carbide on insulator structures (SiCOI). The process consists
of several steps: (i) hydrogen implantation into an oxidised SiC wafer, (ii) bonding the oxidised surface of this wafer to
an oxidised silicon substrate and (iii) high temperature splitting of a thin SiC film from the SiC wafer at the depth of the
maximum hydrogen concentration and further annealing of the splitted film. The defect generation occurring during this process
was investigated by synchrotron radiation X-ray diffraction topography, with special emphasis on to the last two steps. Various
X-ray topographic techniques were used to characterise the lattice defects inside the SiC wafer, to quantify the strong lattice
distortion near the edges of the splitted SiC film and to reveal SiC film regions lost during the splitting process. Moreover,
we show that the strain fields of dislocations, observed in the silicon substrate after high temperature splitting and annealing
of the splitted structure, induce a corresponding deformation in the thin SiC overlayer, despite the presence of the sandwiched
oxide film. The defect density is much lower in the central region of the SiCOI structure.
Received: 29 June 2001 / Accepted: 8 November 2001 / Published online: 20 March 2002 相似文献
16.
E. Majkova S. Luby R. Senderak Y. Chushkin M. Jergel I. Zergioti D. Papazoglou A. Manousaki C. Fotakis 《Applied Physics A: Materials Science & Processing》2003,76(5):763-766
The sub-picosecond laser microstructuring of multilayer gratings is presented in this paper. A micromachining system operating
with a 0.5 ps KrF laser at 248 nm was used to etch grating structures with a groove width of 1–2 μm in Mo/Si and Si/Mo multilayers.
Atomic force microscopy, scanning electron microscopy and X-ray reflectivity were used to characterize the microetched patterns.
The ω-scans around the 1st Bragg maximum show symmetric satellites up to 3rd order, with positions corresponding to the grating
period. The use of sub-picosecond laser pulses minimizes the thermally affected zone and enhances the quality of the etched
features. Short pulse laser processing is advantageous for the fabrication of high spatial resolution microstructures required
in X-ray optics.
Received: 21 May 2002 / Accepted: 19 August 2002 / Published online: 15 January 2003
RID="*"
ID="*"Corresponding author. Email: dpapa@iesl.forth.gr 相似文献
17.
Z.W. Chen S.Y. Zhang S. Tan J.G. Hou Z.Q. Wu 《Applied Physics A: Materials Science & Processing》2003,76(1):33-35
In this paper, we report on the simulation of fractal clusters and the comparison with experimental fractal patterns. We found
that multiple fractal clusters can be formed in Au/Ge bilayer films for different annealing times. The fractal crystallization
area increases with the increase in the annealing time. The random successive nucleation model can simulate the actual growth
processes of multiple growth sites. The simulating fractal clusters are in good agreement with our experimental fractal patterns.
Received: 21 June 2001 / Accepted: 15 December 2001 / Published online: 3 June 2002
RID="*"
ID="*"Corresponding author. Fax: +86-551/3602-803, E-mail: chenzw@ustc.edu.cn 相似文献
18.
J. Fortágh H. Ott S. Kraft A. Günther C. Zimmermann 《Applied physics. B, Lasers and optics》2003,76(2):157-163
In this article, we describe an experimental system for generating Bose–Einstein condensates and controlling the shape and
motion of a condensate by using miniaturised magnetic potentials. In particular, we describe the magnetic trap setup, the
vacuum system, the use of dispenser sources for loading a high number of atoms into the magneto-optical trap, the magnetic
transfer of atoms into the microtrap, and the experimental cycle for generating Bose–Einstein condensates. We present first
results on outcoupling of condensates into a magnetic waveguide and discuss influences of the trap surface on the ultra-cold
ensembles.
Received: 21 August 2002 / Revised version: 10 December 2002 / Published online: 26 February 2003
RID="*"
ID="*"Corresponding author. Fax: +49-7071/295-829, E-mail: fortagh@pit.uni-tuebingen.de 相似文献
19.
T. Ohtsubo T. Azuma M. Takaura T. Higashiguchi S. Kubodera W. Sasaki 《Applied Physics A: Materials Science & Processing》2003,76(2):139-141
We have demonstrated the non-thermal removal of oxygen atoms from an oxidized silicon surface (SiO2) on a silicon wafer by the use of a low-power (0.3 mW cm-2) incoherent vacuum ultraviolet (VUV) light source at 126 nm. X-ray photoelectron spectroscopy (XPS) has shown that a maximum
Si concentration of 80% appears at the surface after a 20-h irradiation with 9.8 eV photons, as a result of oxygen removal
from the SiO2 matrix. The surface morphology, however, indicates no damage or melting on the surface even after the irradiation.
Received: 15 April 2002 / Accepted: 17 April 2002 / Published online: 10 September 2002
RID="*"
ID="*"Permanent address: Nano-Tech Photon Inc., Shimotomita 4132-1, Shintomi, Miyazaki, 889-1404, Japan
RID="**"
ID="**"Corresponding author. Fax: +81-985/583-899, E-mail: kubodera@opt.miyazaki-u.jp 相似文献
20.
K. Wang A. Chelnokov S. Rowson J.-M. Lourtioz 《Applied Physics A: Materials Science & Processing》2003,76(7):1013-1016
We show the very particular behavior of focused-ion-beam etching in macroporous silicon. We demonstrate that, contrary to
bulk samples, a porous substrate allows extremely high-aspect-ratio patterns to be etched at submicrometer scales. Thanks
to the pre-introduced porosity, the secondary effects that limit the pattern depth in bulk-sample etching, namely the sputtered
material redeposition as well as the beam ‘self-focusing’ effects, are strongly reduced in a porous sample. In this case the
walls between the pores are sputtered in an almost independent way. The etching of deep and straight patterns is feasible.
Combined with photoelectrochemical etching that generates the initial macropores, three-dimensional (3D) lattices can be obtained,
as demonstrated by 3D photonic crystal fabrication.
Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003
RID="*"
ID="*"Corresponding author. Fax: +33-1/6915-6086, E-mail: wang@lps.u-psud.fr 相似文献