Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Study of dielectric characteristics of graded Ba<Subscript>1−x</Subscript>Ca<Subscript>x</Subscript>Zr<Subscript>0.05</Subscript>Ti<Subscript>0.95</Subscript>O<Subscript>3</Subscript> thin films grown by a sol-gel process

The compositionally graded Ba_1−xCa_xZr_0.05Ti_0.95O₃ (x = 0, 0.05, 0.10) (BCZT) thin films with compositional gradient from BaZr_0.05Ti_0.95O₃ to Ba_0.90Ca_0.10Zr_0.05Ti_0.95O₃ were deposited on Pt/Ti/SiO₂/Si substrates by sol-gel processing. The crystal structure of the thin films was determined by X-ray diffraction. Field emission scanning electron microscopy (FESEM) was used to examine crystallite size and morphology of compositionally graded thin films. The dielectric properties of compositionally graded thin films were characterized by measuring the dielectric constant and dielectric loss as a function of temperature, applied electric field and frequency. As a result, compositionally graded thin films with weak temperature dependence were realized. Dielectric constant peaks, common to a ferroelectric transition, were not observed in the temperature range from 298 to 413 K. The compositionally graded BCZT thin films with weak temperature dependence of tunability could be attractive materials for frequency and phase agile tunable microwave components such as tunable filters, tunable oscillators, and phase shifters for application in phased array antennas.     

Hydrothermal synthesis, structure and property of nano-BaTiO3-based dielectric materials

A series of Ba_1-xSr_xTi_1-yZr_yO₃ (0≤x≤0.5, 0≤y≤0.4) and BA_1?xZn_xTi_1?ySn_yO₃ (0≤x≤0.3, 0≤y≤0.3) solid solutions were synthesized by low-temperature/low-pressure hydrothermal method below 170°C, 0.8 MPa. XRD pattern and cell parameters-composition figures of these prepared powders demonstrated that they are completely miscible solid solutions based on BaTiO₃. Furthermore, TEM showed that they have a shape of uniform, substantially spherical particles with an average particle size of 70 nm in diameter. The sintered ceramics of those powders doped by Sr²⁺ and Zr⁴⁺ or Zn²⁺ and Sn⁴⁺ have dielectric constant twelve times higher than and dielectric loss 1/6 those of pure BaTiO₃ phase at room temperature.     

Electrical,dielectric and pyroelectric behavior of neodymium substituted barium zirconium titanate

Neodymium (Nd) substituted barium zirconium titanate with nominal composition (Ba_1−xNd_x)(Zr_0.52Ti_0.48)O₃ [x = 0.1, and 0.2] were synthesized using solid state reaction method. X-ray analysis confirmed the formation of perovskite structure along with minor pyroclore phase of neodymium. The change in grain size revealed the influence of Nd-ions on the microstructure. The sintered samples exhibited negative temperature coefficient of resistance (NTCR) and superior semiconducting behavior. Addition of Nd³⁺varies the room temperature resistivity of Ba(Zr_0.52Ti_0.48)O₃. As the concentration of Nd-ion increased, the value of temperature dependent dielectric constant decreased whereas the Curie temperature of the ceramics shifted toward higher temperature side showing diffuse phase transition. This is attributed to decrease in average grain size. Temperature dependent pyroelectric current exhibited combination of primary and secondary pyroelectric effect.     

Structure and electrical properties of Pb(Zr<Subscript>0.25</Subscript>Ti<Subscript>0.75</Subscript>)O<Subscript>3</Subscript> thin films on LaNiO<Subscript>3</Subscript>—Coated thermally oxidized Si substrates

Pb(Zr_0.25Ti_0.75)O₃ (PZT25) thin films were prepared on LaNiO₃-coated thermally oxidized silicon substrates by chemical solution deposition method, where LaNiO₃ electrodes were also prepared by a chemical solution deposition technique. The dielectric constant and dielectric loss of the PZT25 thin films were 570 and 0.057, respectively. The remanent polarization and coercive field were 20.11 μC/cm² and 60.7 kV/cm, respectively. The PZT25 thin films on LaNiO₃-coated thermally oxidized silicon substrates showed improved fatigue characteristics compared with their counterparts on plantium-coated silicon substrates.     

Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO2 (rutile) and (001) BaTiO3 single crystals

The orientation relationships of Ti-rich barium titanate phases formed by solid state reactions at high temperatures were studied using (110) TiO₂ (rutile) and (001) BaTiO₃ single-crystal substrates. Well-oriented Ba₆Ti₁₇O₄₀ islands were observed after a vapor–solid reaction of a BaO quantity equivalent to a nominal BaO film thickness of 1 nm with the TiO₂ substrate, whereas a thin film consisting of well-oriented BaTiO₃ and Ba₆Ti₁₇O₄₀ grains was formed after vapor–solid reaction of a BaO quantity equivalent to a nominal BaO film thickness of 50 nm with the rutile substrate. A topotaxial orientation relationship between Ba₆Ti₁₇O₄₀ and TiO₂ was found. Topotaxy is facilitated by a certain similarity in the oxygen sublattices of TiO₂ and Ba₆Ti₁₇O₄₀. The mechanism of the reaction occurring between BaO vapor and the TiO₂ surface at high temperature is discussed. On the other hand, several well-oriented Ba₄Ti₁₃O₃₀, Ba₆Ti₁₇O₄₀ and Ba₂Ti₅O₁₂ phases were observed to be embedded in the mainly forming Ba₂TiSi₂O₈ phase after a solid–solid reaction of amorphous SiO₂ thin films with (001) BaTiO₃ substrates at temperatures above 1000 °C. They were formed by a topotaxial reaction involving the transformation of (111) planes of BaTiO₃ into (001) planes of the Ti-rich phases by removal of BaO and insertion of TiO₂. Cross-sections of the interfaces between the substrates and the various reaction products are studied by (high-resolution) transmission electron microscopy.     

Thermal analysis of phase transitions in perovskite electroceramics

Perovskite oxide ceramics have found wide applications in energy storage capacitors, electromechanical transducers, and infrared imaging devices due to their unique dielectric, piezoelectric, pyroelectric, and ferroelectric properties. These functional properties are intimately related to the complex displacive phase transitions that readily occur. In this study, these solid–solid phase transitions are characterized with dielectric measurements, dynamic mechanical analysis, thermomechanical analysis, and differential scanning calorimetry in an antiferroelectric lead-containing composition, Pb_0.99Nb_0.02[(Zr_0.57Sn_0.43)_0.92Ti_0.08]_0.98O₃, and in a relaxor ferrielectric lead-free composition, (Bi_1/2Na_1/2)_0.93Ba_0.07TiO₃. The (Bi_1/2Na_1/2)_0.93Ba_0.07TiO₃ ceramic develops strong piezoelectricity through electric field-induced phase transitions during the poling process. The combined thermal analysis techniques clearly reveal the differences in unpoled and poled ceramics.     

Powderless processing of ceramics: Thin-layer electroceramics

A review is made of progress on the sol-gel processing of dense insulating electroceramics by polymeric condensation routes. Up until the past ten years, powders and porous coatings were principally made for optical and conductive applications. Much effort was expended on silica (SiO₂) and silicate-based systems. Recently, these approaches have been extended to non-silicate systems [1]. In this paper information is presented for the powderless processing of selected electroceramics in thin-layer form. Materials include PbTiO₃, BaTiO₃, Ba_1–x Pb _x TiO₃, PbZrO₃, Pb(Zr_1–y Ti _y )O₃ and (Pb_1–x La _x )(Zr_1–y Ti _y )O₃ which find applications in ceramic capacitors, piezoelectric transducers and electrooptic modulators. The approach is to avoid powders, and the attendent problems of powder handling, flow, packing, etc., and make use of polymerization condensation reactions to form extended networks with chemical linkage. Data are reported for the synthesis and low temperature processing routes for amorphous and polycrystalline ceramics.     

Structural,optical and dielectric relaxor properties of neodymium doped cubic perovskite (Ba1−xNd2x/3)(Zr0.3Ti0.7)O3

Neodymium doped Barium Zirconate Titanate (Ba_1−xNd_2x/3)(Zr_0.3Ti_0.7)O₃ (x = 0.00, 0.02, 0.04, 0.06, 0.08, 0.10) ceramics were prepared using the solid state reaction route. Structural characterizations of the materials were done by using X-ray diffraction and Raman spectroscopy. XRD study suggested that all the compositions were of single phase cubic perovskite structure with space group Pm-3m while Raman spectra revealed that the replacement of the Ba²⁺ ions by Nd³⁺ ions significantly reduced the intensity of the Raman active modes and shifted them towards higher energy side. Room temperature optical property was analyzed by photoluminescence spectroscopy, which confirmed formation of shallow defects in the band gap. Photoluminescence property was attributed to the presence of polar [TiO₆] distorted clusters in the globally cubic matrix. As a result PL emission spectra of these materials were found to belong to violet–blue regions. Microstructural study of sintered pellets revealed that the grain sizes increase with increase in doping concentration. The temperature dependence of the dielectric properties was investigated in the frequency range 1 kHz to 1 MHz. The broadening in the dielectric constant peak around the phase transition temperature and shifting of the temperature maximum towards higher temperatures with increase in frequency indicated a relaxor type of behavior.     

Glycol-based sol-gel process for the fabrication of ferroelectric PZT thin films

A new sol-gel system using ethylene glycol was developed for the fabrication of PZT thin films with compositions near the morphotropic phase boundary Pb(Zr_0.52Ti_0.48)O₃. Ethylene glycol was used as both a chelating agent and a solvent to replace the highly toxic methoxyethanol used in previous formulations. Thin films were deposited by spin coating the solutions onto platinized silicon substrates. Films were completely crystallized by about 600°C and contained the ferroelectric perovskite phase. A dielectric constant of about 750–800 at 1 KHz was obtained for thin films of 0.3 µm thickness. The hysteresis measurements revealed a remanent polarization of 15 mC/cm² with a coercive field of 60 kV/cm.     

Orientation dependence of the dielectric and piezoelectric properties for the Ba0.98Ca0.02Ti0.96Sn0.04O3 thin films

Lead free Ba_0.98Ca_0.02Ti_0.96Sn_0.04O₃ (BCST) thin films with (110), (111) and (001) orientations were processed via chemical solution deposition, and effects of orientation on the dielectric and piezoelectric properties were investigated in some aspects. The (110) orientated BCST thin films exhibit highest Curie temperature (T _c of 85 °C) and lowest dielectric loss (tan δ of 0.02). While, the (111) orientated BCST thin films exhibit highest dielectric tunability (74 %) and largest piezoelectric coefficient (d ₃₃ of 78 pm/V), which indicate that it is a promising lead-free replacement for lead-based applications. The anisotropic dielectric and piezoelectric properties in the three kinds of oriented BCST films has been attributed to the difference of structure, in-plane stress and polarization rotation in orientation engineered BCST films. This work clearly reveals the dielectric and piezoelectric properties of BCST films exhibit a strong sensitivity to orientation.     

New perovskite-related oxides having high dielectric constant: Ln2Ba2CaZn2Ti3O14 (Ln = La and Pr)

Two new oxides, La₂Ba₂CaZn₂Ti₃O₁₄ and Pr₂Ba₂CaZn₂Ti₃O₁₄, have been synthesized by the ceramic route at 1100°C. These oxides crystallize in the disordered cubic structure with an ‘a’ lattice parameter of 3.9728 (2) and 3.9448 (5) respectively. These oxides show high dielectric constant (70 and 57) and low loss (0.003 and 0.013 at 100 kHz) for La₂Ba₂CaZn₂Ti₃O₁₄ and Pr₂Ba₂CaZn₂Ti₃O₁₄ respectively. The dielectric constant is highly stable with frequency and temperature. Dedicated to Professor C N R Rao on his 70th birthday     

Synthesis, structure and dielectric properties of Ba1-xSrxMyTi1-yO3 (M = Zr, Sn)

A series of Ba_1-xSr_xM_yTi_1-yO₃ (M = Zr, Sn, 0⩽x⩽0.4, 0⩽y⩽0.3) solid solutions were synthesized with the soft chemical method below 100 °C. XRD pattern and cell parameters-composition figures of the prepared powder demonstrate that they are completely miscible solid solutions based on BaTiO₃. Furthermore, TEM shows that they have a shape of uniform, substantially spherical particles with an average particle size of 70 nm in diameter. The sintered ceramics of the powder doped with Sr²+and Zr⁴⁺ or Sn⁴⁺ have dielectric constant eight times higher and dielectric loss thirty per cent lower than those of pure BaTiO₃ phase at room temperature.     

(La0.4Ba0.4Ca0.2)(Mn0.4Ti0.6)O3: A new titano-manganate with a high dielectric constant and antiferromagnetic interactions

A new perovskite-based titano-manganate, (La_0.4Ba_0.4Ca_0.2)(Mn_0.4Ti_0.6)O₃, has been prepared by the ceramic route at 1100°C. This oxide was found to possess the cubic perovskite structure with  Å (space group ). The refined composition as obtained by Rietveld analysis of powder X-ray data was found to be (La_0.44Ba_0.38Ca_0.18)(Mn_0.43Ti_0.57)O_2.91(3) (R_p=0.0704, wR_p=0.0828). The composition was also ascertained by Energy dispersive X-ray analysis. Iodometric studies led to a slightly higher oxygen content (compared to Rietveld refinement) corresponding to an average manganese oxidation state of 3.05. The above oxide was found to exhibit high dielectric constant (ε) of 6980 at 1 kHz decreasing to 590 at 100 kHz. At high temperatures (200°C) it shows an unusually high dielectric constant of 20,000 at 1 kHz. In addition to the dielectric properties, detailed magnetic studies show evidence of long-range antiferromagnetic interactions near 5 K. The presence of unusually high dielectric constant coupled with the long-range magnetic interactions may open up interesting applications.     

Ferroelectric and dielectric behaviour of Bi0.92La0.08FeO3 multiferroic thin films prepared by soft chemistry route

Bi_0.92La_0.08FeO₃ (BLFO) thin films were grown on platine substrates by the soft chemical route. Ferroelectric and dielectric behaviors of BLFO films deposited by spin-coating technique and annealed at 773 K for 2 h in air atmosphere were explained. BLFO thin films obtained presents a rhombohedral structure. The BLFO films present dielectric and ferroelectric behaviors with dielectric permittivity and dielectric loss of approximately 81 and 0.0144 at 1 kHz. The Au/BLFO/Pt capacitor shows a hysteresis loop with remnant polarization of 20.6 μC/cm² and coercive field of 53.88 kV/cm. The polarization switching and the fatigue behavior of the BLFO films were significantly enhanced.     

Microstructure,dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr<Subscript>0.25</Subscript>Ti<Subscript>0.75</Subscript>]O<Subscript>3</Subscript> thin films

Ba[Zr_0.25Ti_0.75]O₃ (BZT) thin films were synthesized by the complex polymerization method and heat treated at 400 °C for different times and at 700 °C for 2 h. These thin films were analyzed by X-ray diffraction (XRD), Fourier-transform infrared (FT-IR) spectroscopy, field emission gun-scanning electron microscopy (FEG-SEM) and atomic force microscopy (AFM), Ultraviolet–visible (UV–vis) absorption spectroscopy, electrical and photoluminescence (PL) measurements. FEG-SEM and AFM micrographs showed that the microstructure and thickness of BZT thin films can be influenced by the processing times. Dielectric constant and dielectric loss of BZT thin films heat treated at 700 °C were approximately 148 and 0.08 at 1 MHz, respectively. UV–vis absorption spectra suggested the presence of intermediary energy levels (shallow and deep holes) within the band gap of BZT thin films. PL behavior was explained through the optical band gap values associated to the visible light emission components.     

The chemical and dielectric properties of epoxy/(Ba0.8Sr0.2)(Ti0.9Zr0.1)O3 composites for embedded capacitor application

The characteristics of epoxy/(Ba_0.8Sr_0.2)(Ti_0.9Zr_0.1)O₃ (BSTZ) composites are investigated for the further application in embedded capacitor device. The effects of BSTZ ceramic powder filler ratio on the chemical, physical and dielectric properties of epoxy/BSTZ composites are studied. Differential scanning calorimeter (DSC) thermal analysis is conducted to determine the optimum values of hardener agent, curing temperature, reaction heat, and glass transition temperature (T_g). The hardener reaction process starts at about 115 °C and completes at about 200 °C, for that it is appropriate to process of epoxy/BSTZ composites in the range of temperature. The highest glass transition temperature (T_g) of 155 °C is obtained at one equivalent weight ratio (hardener/epoxy). Only the BSTZ phase can be detected in the XRD patterns of epoxy/BSTZ composites. The more BSTZ ceramic powder is mixed with epoxy, the higher crystalline intensity of tetragonal BSTZ phase are revealed in the XRD patterns. The dielectric constant measured at 1 MHz increases from 5.8 to 23.6 as the content of BSTZ ceramic powder in the epoxy/BSTZ composites increases from 10 to 70 wt%. The loss tangents of the epoxy/BSTZ composites slightly increase with the increase of measurement frequency.     

A structure, conductivity and dielectric properties investigation of A3CoNb2O9 (A=Ca, Sr, Ba) triple perovskites

The room temperature structures as well as the temperature-dependent conductivity and dielectric properties of the A₃CoNb₂O₉ (A=Ca²⁺, Sr²⁺ and Ba²⁺) triple perovskites have been carefully investigated. A constrained modulation wave approach to Rietveld structure refinement is used to determine their room temperature crystal structures. Correlations between these crystal structures and their physical properties are found. All three compounds undergo insulator to semiconductor phase transitions as a function of increasing temperature. The hexagonal Ba₃CoNb₂O₉ compound acts as an insulator at room temperature, while the monoclinic Ca₃CoNb₂O₉ compound is already a semiconductor at room temperature. The measured dielectric frequency characteristics of the A=Ba compound are excellent.     

Investigation on the growth of CaCu3Ti4O12 thin film and the origins of its dielectric relaxations

Using the radio frequency magnetron sputtering, CaCu₃Ti₄O₁₂ (CCTO) thin films were deposited on platinized silicon substrates. The influence of annealing temperature on structures and morphologies of the thin films was investigated. The high annealing temperature increased the crystallinity of the films. Temperature dependence of the dielectric constant revealed an amazing different characteristic of the dielectric relaxation at ∼10 MHz, whose characteristic frequency abnormally increased with the decrease of the measuring temperature unlike the relaxations due to extrinsic origins. Meanwhile, the dielectric constant at high frequencies was close to the value derived from the first principle calculation. All these gave the evidences to ascribe this relaxation to the intrinsic mechanism.