Study on reaction mechanism of YBa2Cu3O7-x film by TFA-MOD process

This paper systematically investigates the intermediate phases of YBa2Cu3O7-x (YBCO) film prepared by metalorganic deposition method using trifluoroacetates (TFA-MOD). According to x-ray diffraction and Raman analyses, the precursor film decomposed in a mixture of BaF2, Y2O3 and CuO after the pyrolysis process. Then these intermediate phases converted into tetragonal YBa2Cu3O6.5 at about 725°C. The influence of water vapour pressure on the YBa2Cu3O7-x film growth on LaAlO3 single-crystal substrates was also studied. The films prepared at low water vapour pressures (40-140 hPa) showed poor electrical performance due to the a-axis grain structure and impurity phases. However, the films prepared at 190 hPa exhibited the highest critical temperature of 90 K and the highest Jc of 3.8 MA/cm2, which was attributed to the formation of a purer YBCO phase and stronger biaxial texture.     

High critical current density YBa2Cu3O7−δ tapes prepared by the surface-oxidation epitaxy method

YBa₂Cu₃O_7−δ (YBCO) films with high critical current density (J_c) were successfully fabricated on nickel tapes buffered with epitaxial NiO. NiO was prepared on the textured nickel tape by the surface-oxidation epitaxy (SOE) method. We have reported so far a critical temperature (T_c) of 87 K and J_c=4–6×10⁴ A/cm² (77 K, 0 T) for the YBCO films on NiO/Ni tapes. To enhance the superconducting properties of the YBCO films on the SOE-grown NiO, depositions of thin oxide cap layers such as YSZ, CeO₂, and MgO on NiO were investigated. These oxide cap layers were epitaxially grown on NiO and provided the template for the epitaxial growth of YBCO films. Substantially improved data of T_c=88 K and J_c=3×10⁵ A/cm² (77 K, 0 T) and 1×10⁴ A/cm² (77 K, Hc, 4 T) were obtained for YBCO film on NiO, by using a MgO cap layer with a thickness of 50 nm. The method described in this paper is a simple way to produce long YBCO tape conductors with high-J_c values.     

退火氧压对YBa2Cu3O7-x薄膜中的激光感生热电电压效应的影响

测量了在不同氧压下退火生长的YBa₂Cu₃O_7-x(YBCO)薄膜中的激光感生热电电压(LITV)信号,发现随退火氧压的增大可使LITV信号的峰值有2—4倍的增强,并且变化趋势与薄膜热电势的各向异性随氧含量的变化规律相同.波长在473—808nm范围内的连续激光辐照,在5000Pa的氧压下退火生长的YBCO薄膜中探测到的LITV信号最大;而紫外脉冲激光辐照时,LITV信号的最大值出现在退火氧压为10⁵Pa 关键词： 2Cu₃O_7-x薄膜')" href="#">YBa₂Cu₃O_7-x薄膜 激光感生热电电压 各向异性的Seebeck系数 氧含量     

Increased critical current density and pinning in thick Ag/YBa2Cu3O7−x multilayers

We have investigated the superconducting properties of Ag/YBa₂Cu₃O_7−x thick multilayers grown by Pulsed Laser Deposition, and found that the artificial pinning centres induced by Ag nanodots lead to a significant increase in critical current, especially in high applied magnetic fields. Transmission Electron Microscopy showed a columnar growth of YBa₂Cu₃O_7−x induced by Ag nanodots, while angle-dependent transport measurements revealed the existence of strong, both isotropic and c-axis correlated, artificial pinning centres.     

掺杂Y2O3和BaCeO3提高MOD-YBCO超导性能的研究

本文通过在前驱液中添加过量钇盐和铈的有机盐,采用三氟乙酸盐-金属有机沉积法(TFA-MOD) 在铝酸镧单晶基体上制备了含有纳米氧化钇和纳米铈酸钡的YBCO薄膜. 与纯YBCO薄膜相比,掺杂Y₂O₃/BaCeO₃的YBCO膜的临界转变温度几乎保持不变,为91 K左右. 而掺杂Y₂O₃/BaCeO₃的YBCO膜的临界电流密度达到5.0 MA/cm² (77 K, 0T), 是纯YBCO膜临界电流密度的1.5倍.薄膜中的Y₂O₃和BaCeO₃可能在YBCO内部起到了 有效的钉扎磁通作用. 关键词： 钇钡铜氧薄膜 2O₃和纳米BaCeO₃')" href="#">纳米Y₂O₃和纳米BaCeO₃ 磁通钉扎 三氟乙酸盐-金属有机沉积     

Temperature dependence of flux pinning in YBa2Cu3Ox

Magnetization versus applied field data have been taken up to 5 T over a wide temperature range from 10 K to 77 K for polycrystalline YBa₂Cu₃O_x with x=6.98 and x=6.62. The intragrain critical current density has been calculated based on the magnetization measurements. The observed temperature dependence of the flux pinning behavior in the x=6.98 sample indicates a new pinning mechanism in the intermediate temperature region, whose strength increases linearly with the applied field above certain field values. The experimental results also suggest that the twin boundary pinning is active only in the low temperature region.     

Effects of Pb-ion irradiation on the vortex pinning in melt-textured YBa2Cu3Ox

Melt-textured YBa₂Cu₃O_x quasicrystalline samples were studied for the effects of Pb-ion irradiation on the vortex pinning. The strength of the pinning was monitored by measurements of the saturation remanent magnetization (M_R) as a detailed function of temperature from 4.2 K up to T_c (≈92 K). Our results show that M_R is greatly enhanced by the Pb-ion irradiation at all temperatures below T_c. Specifically, when compared to a similar but nonirradiated sample, the M_R of an optimally irradiated sample is raised by a factor of 3.4 at 4.2 K and, more strikingly, by 12.7 at 77 K. Contrastingly, in an earlier study of a γ-ray irradiated Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O₁₀ sample, the vortex pinning was seen to be enhanced but mainly near 4.2 K, suggesting that the γ-ray irradiation produces highly localized pinning sites. Hence, our present results imply conversely that the Pb-ion irradiation creates extended structural defects that are effective as vortex pinning sites up to relatively high temperatures, including that of liquid nitrogen.     

A model for the chain-to-plane charge transfer in YBa2Cu3O6+x

A model for the chain-to-plane charge transfer is proposed to account for the two plateaus,at 60 K and at 90 K,of the Tc(x) characteristics of the YBa2Cu3O6+x high-Tc superconductor.It is assumed that the number of holes transferred from a CuO chain of length l to two nearby CuO2 sheets is proportional to l(that is,to the number of oxygen atoms in the chain),if the chain length is greater than,or equal to,a certain critical chain length,lcr,that is required to trigger the charge transfer process.No holes are assumed to have been transferred from chains of length l相似文献   

Vortex pinning in YBa2Cu3O7?x films

Evidence that pinning on linear or planar defects dominates the vortex dynamics in YBa₂Cu₃O_7−x (YBCO) films is provided by complex impedance measurements at temperature 8 K<T<T _c and magnetic field 0<B<6 T. Below the vortex lattice melting transition B_g(T) but above a threshold field B_p≈8(1-T/T _c ) T, the inductance of vortices increases as B², much less rapidly than predicted for collective pinning of vortices by point defects. Above the vortex melting line, critical scaling persists over the region B_g(T<B<B^*(T) where the vortex correlation length ξ exceeds a characteristic length scale ξ^*≡ξ(B=B^*)≈450?. The value of ξ^* is not sensitive to Al-doping in the Cu sites in the lattice and is close to the size of twin domains in the film. The nature of the observed crossovers is discussed in terms of available theoretical models for a glass-liquid transition at B_g.     

In situ grown epitaxial YBa2Cu3O7 − x thin films by pulsed laser deposition under reduced oxygen pressure during cool-down time

We report novel pulsed laser deposition conditions that were used to obtain superconducting epitaxial YBCO thin films, grown in situ using an oxygen pressure lower than the usual one during the cool-down time. We studied the influence of the PLD conditions as substrate temperature, oxygen pressure, laser fluence, and number of laser pulses on the crystallographic and morphological features, and on the superconducting properties of the films. Good superconducting properties were obtained without a high temperature post-deposition annealing process. A maximum critical temperature of 88.6 K was obtained.     

Giant pressure effect in oxygen deficient YBa2Cu3Ox

The pressure effect on T_c of polycrystalline and single crystalline YBa₂Cu₃O_x investigated as a function of oxygen content x by ac-susceptibility measurements under helium pressure. In the overdoped region x> 6.93 the single crystals show a negative dT_c/d p, as expected from the charge transfer model. For optimally doped samples with x = 6.93 we find dT_c/d P = 0.4 K/GPa which points to pressure effects on T_c aside from charge transfer. In the underdoped region x < 6.93 the dT_c/d p values obtained from the experiment depend strongly on the storage temperature of the sample during the experiment. When the samples are stored at temperatures well below 240 K throughout the entire experiment including pressure application and pressure release, dT_c/d p increases to approx. 7 K/GPa at x = 6.7 but with a further decrease of the oxygen content the dT_c/d p drops to approx. 2 K/GPa at x = 6.4. These effects are intrinsic to the YBa₂Cu₃O_x structure and can be explained by considering the anisotropic structure of YBa₂Cu₃O_x. The decrease of the c-axis lattice parameter results in a charge transfer to the CuO₂-planes mainly [1], whereas the compression of the a- and b-axis lattice parameter is known to produce different pressure effects which are responsible for the peak in dT_c/d p at x = 6.7 [2]. When pressure is changed at room temperature oxygen ordering effects occur which cause a relaxation of T_c to the equilibrium value T_c(p) at this pressure with a time constant depending on the oxygen content x. A decrease x results in a peak effect in dT_c/d p at x = 6.7 again, which is enhanced to approx. 12 K/GPa. If the oxygen content is decreased further, dT_c/d p first drops to 5 K/GPa at x = 6.6, but the increases to values of more than 20 K/GPa for x < 6.42. These giant pressure effects at low oxygen contents are mainly caused by a reversible T_c increase (dT_c/d p)_O due to pressure induced oxygen ordering via oxygen motion between unit cells.     

SiO2 passivation film effects on microwave characteristics of YBa2Cu3O7−x-based resonators

SiO₂ film coated as a passivation layer for YBa₂Cu₃O_7−x (YBCO)-based microwave devices is investigated by measuring the microwave characteristics of microstrip line resonators. The SiO₂ film is deposited with its 0.3 to 0.4 μm thickness by a sputtering method using Ar + 30%O₂ plasma. These deposition conditions do not degrade the microwave characteristics and the critical temperature (T_c). Next, the SiO₂ film coated resonators are compared with the uncoated ones for two kinds of degradation conditions: a 200°C annealing in air, and an exposure to air at 85°C and 85% RH (relative humidity). We find that the SiO₂ passivation film prevents the YBCO thin film from the surface degradation and reacting with water.     

YBa2Cu3O7-x的金属-绝缘体转变

借助于局域化的标度理论,我们对层状结构系统引进一个由电导各向异性或层间耦合决定的有效维度,认为电导的减小和有效维度的降低是YBa₂Cu₃O_7-x和其它氧化物金属-绝缘体转变的原因,同时也讨论了有限温度的标度理论以解释正常态电阻率的温度行为。 关键词：     

Hole density and Tc behaviour in YBa2Cu3O7 − x

The behaviour of the hole number in YBCO systems as a function of the oxygen deficiency x is studied theoretically by calculating the density of electron states for several different superstructures formed by periodic arrangements of the oxygen vacancies. The characteristic features of the electronic properties for chain copper sites with different coordination are pointed out and their relevance in determining the number of carriers for oxygen planes is illustrated. It is shown that the curve of the hole number as a function of x shows plateaus and jumps similar to those found in the T_c versus x curves if the de-oxygenation process takes place by forming fragmented chains. Structures formed by filled and empty chains only give a smooth hole behaviour as a function of the composition. The results of the numerical calculations can be understood by a simple model giving the Fermi energy shift in terms of the concentrations of Cu(1) sites with different coordination.     

Transient creep of YBa2Cu3O7−x superconductor

Rapid changes of oxygen partial pressure (P_O2) between 10³ and 2.1×10⁴ Pa have been carried out during steady-state plastic deformation of polycrystalline YBa₂Cu₃O_7−x (YBCO) at temperatures between 825 and 900°C. Transient creep was observed after such P_O2 changes. The analysis of these creep transients allowed the determination of the chemical diffusion coefficient for reequilibration, which is identical to that found from thermogravimetry and electrical conductivity experiments for oxygen vacancies.     

YBa2Cu3O7-x涂层导体的外延生长和性能对CeO2缓冲层的依赖性

利用倾斜衬底沉积法在无织构的金属衬底上生长了MgO双轴织构的模板层,在这一模板层上实现了YBa₂Cu₃O_7-x薄膜的外延生长.在外延YBa₂Cu₃O_7-x薄膜前,依次沉积了钇稳定的立方氧化锆和CeO₂作为缓冲层.利用X射线衍射2θ扫描、扫描、Ω扫描和极图分析测定了这些膜的结构和双轴织 关键词： 2Cu₃O_7-x镀膜导体')" href="#">YBa₂Cu₃O_7-x镀膜导体 2缓冲层')" href="#">CeO₂缓冲层 厚度依赖性 外延生长     

Dependence of the laser-induced voltages on the oxygen content in normal state YBa2Cu3O7−δ films

Our investigation on the relation between oxygen content and the laser-induced voltages of the YBa₂Cu₃O_7−δ films in normal-state shows that deoxygenation of the superconducting films reduces the laser-induced voltages greatly, even reverses the sign of the signals at large oxygen deficiency. The absolute value of the negative signal at large oxygen deficiency can be greater than that of the positive signal.     

Infrared optical response of YBa2Cu3O7 and PrBa2Cu3O7 An ellipsometric study

Ellipsometry was used to study (110) and (001) oriented films of YBa₂Cu₃O₇ and PrBa₂Cu₃O₇ in the mid-and near-infrared spectral regions. Below a photon energy of 0.1 eV, the in-plane component of the dielectric tensor of YBa₂Cu₃O₇ is dominated by a Drude term with a squared plasma energy of (3.0 ± 0.3) eV². This “oscillator strength”, and the Lorentzian broadening energy of (0.104 ± 0.005) eV at room temperature, are confirmed by the changes induced in Pr-substituted material, and by low-temperature measurements in the near-infrared. The deviation from the Drude behavior observed above 0.1 eV is accounted for by a broad absorption band with an oscillator strength of (3.6 ± 0.1) eV² in YBa₂Cu₃O₇ which shifts to higher energies and takes over almost all of the oscillator strength of the Drude term when Y is substituted by Pr. The response to electric fields perpendicular to the planes is much weaker, with an upper bound of 0.63 eV² for the squared plasma energy. The in-plane loss function computed from the measured dielectric function follows the Drude-like lineshape, modified by the bound-state absorption band, down to the lowest energy reached in our measurements (0.058 eV).     

Coherence transition in granular YBa2Cu3O7-δ, YBa2Cu2.95Zn0.05O7-δ, and YBa1.75Sr0.25Cu3O7-δ superconductors

We have studied experimentally the electrical magneto-conductivity near the superconducting transition of YBa₂Cu₃O_7-δ, YBa₂ (Cu_2.95Zn_0.05)O_7-δ and Y(Ba_1.75Sr_0.25)Cu₃O_7-δ polycrystalline samples. The measurements were performed in magnetic fields ranging from 0 to 400 Oe applied parallel to the current orientation. The results show that the resistive transition of these systems proceeds in two stages. The pairing transition occurs at the bulk critical temperature T_c, where superconductivity is stabilized within small and homogeneous regions of the sample generically called grains. The regime of approach to the zero resistance state reveals the occurrence of a coherence transition at a lower temperature T_c0. This transition is related to the connective nature of the granular samples and is controlled by fluctuations of the order-parameter phase of individual grains. Our experiments show that the Zn-doping, besides depressing the pairing critical temperature, strongly enlarges the temperature range dominated by effects related to the coherence transition. The substitution of Ba by Sr causes only a small reduction of T_c, but also enhances significantly the effects related to the grain coupling phenomenology. In general, our results indicate that these impurity substitutions in YBa₂Cu₃O_7-δ produce or magnify the granularity at a microscopic level, enhancing the effects of phase fluctuations in the conductivity near the transition.     

Gd替代YBa2Cu3O7－δ超导体的相结构与局域电子结构的研究

利用正电子湮没实验，结合x射线衍射(XRD)结构分析，研究了具有混合稀土特征的(Y_{1 -x}Gd_x)Ba₂Cu₃O_7-δ系列样品. XRD 实验结果表明，半径较大的Gd离子Y位替代使得样品晶胞参数和晶胞体积增大，但所有样品 仍保持与YBa₂Cu₃O_7-δ(YBCO)样品相同的单相正交结 构. 正电子湮没实验表明，正电子各寿命参数表现出很强的Gd替代依赖关系. 从正电子实验 结果出发，计算了Cu-O链区局域电子密度n_e的变化. 结果表明，局域电子密度n _e随Gd含量x的增加而减小，而超导转变温度T_c随局域电子密度ne的减小而增加，这种局域电子密度n_e与超导电性的关联是与铜位替代 完全不同的，且可能是近年来人们关于混合稀土铜氧化物体系具有较高临界电流密度的原因 之一. 该研究结果为铜氧化物超导体的应用和机理研究提供了相应的正电子实验资料. 关键词： 超导电性 正电子湮没 相结构 局域电子密度