DMFC阳极CO_2气泡生长及脱离特性研究

通过对竖直放置直接甲醇燃料电池水平流道内扩散层壁面上CO_2气泡的受力分析,建立描述气泡生长动力学方程,获得CO_2气泡生长速率和气泡脱离直径的计算方法。计算结果表明:CO_2气泡生长和脱离主要受浮力、曳力、剪切升力和表面张力的控制;气泡生长速率随电流密度和接触环直径的增大而增大;甲醇溶液流速增加,气泡脱离直径变小,且流速对气泡脱离直径的影响随接触环直径减小而变大;电池放电电流密度的变化对气泡脱离直径几乎没有影响;温度和甲醇浓度增加,均使气泡脱离直径略有减小;扩散层表面润湿性越好,气泡的脱离直径越小。     

碳黑颗粒生长模型的初步研究

本文利用反应类(Reaction Class)概念和矩(Moment)方法,研究了层流预混甲烷火焰中碳黑颗粒的成核与长大过程。模型综合考虑了颗粒的成核、颗粒间由于碰撞的聚合、以及气态组分在颗粒表面的生长。通过数值计算预报了碳黑颗粒平均粒径、总表面积、体积分数和数密度,以及萘(A4)和乙炔(C2H2)在颗粒表面的增长速率。     

OMVPE硒化锌薄膜的生长与激光特性

本文叙述了在GaAs衬底上用有机金属气相外延(OMVPE)法生长单晶ZnSe薄膜的方法。研究了生长温度,硒锌比对外延膜光电性能的影响。发现生长温度在285℃可以得到表面光亮、结晶性好、低阻、高迁移率、深中心浓度低的外延层。以光泵浦作激发研究了OMVPE ZnSe薄膜的受激发射性质并测量其光学增益。利用ZnSe/GaAs的自然解理面形成的光反馈腔制成了激光器。该激光器的工作温度可以延续到150K。     

EFFECTS OF ISLAND-EDGE EXCHANGE BARRIER ON 2D PATTERN FORMATION IN SURFACTANT-MEDIATED EPITAXY

The nucleation and growth of two-dimensional islands in a surfactant-mediated epitaxy system have been studied by computer simulation. To improve the recent results published in the literature, we use a configuration-dependent energy barrier for the exchange process at the island edge in our model. The simulations produce fractal islands at high temperatures or low deposition fluxes, and a transition to regular compact islands occurs at lower temperatures or higher fluxes, in good agreement with the recent experimental results. The barrier for the island-edge exchange has quite a strong effect on the island density as a function of temperature and flux. A small change of the island-edge exchange barrier induces a large variation of the island density in the low-temperature or high-flux region. The flux-dependent island density shows a clear scaling-law behaviour in the intermediate-flux region. The scaling exponent increases evidently as the island-edge exchange barrier increases.     

EFFECT OF SMALL CLUSTER DIFFUSION DURING TWO-DIMENSIONAL THIN FILM GROWTH ON METAL SURFACE

The diffusion of small clusters such as dimers and trimers on metal surface and the growth of two-dimensional thin films are studied by Monte Carlo simulation, using realistic growth model and physical parameters. It is found that small cluster diffusion plays an important role in the process of thin film growth at not very low temperature. It affects not only the island density and the size of islands but also the critical value of saturation occurring during growth of thin films. The effect of small cluster diffusion depends on both the size of critical nucleus and the growth temperature. The simulation results also show that the larger the cluster allowed to diffuse, the easier the saturation that takes place, giving rise to the lower critical coverage of saturation occurring. It is suggested that the effect of small cluster diffusion should be included in establishing the growth models of thin films.     

基于改进格子Boltzmann焓法模型的霜层生长数值研究

采用介观尺度格子Boltzmann方法数值研究壁面的表面特性对霜层生长的影响.将成核概率模型和改进的焓法相变模型相耦合，建立基于成核概率理论的霜层生长过程格子Boltzmann模型.该模型能够在宏观尺度上模拟霜层生长的加密加厚过程，也可以从微观尺度上描述局部的冰枝生长导致的霜层结构的动态变化，应用该模型能够获得霜层平均厚度、平均密度、结霜量等内部非稳态物理量.开展冷壁面上霜层形成及生长过程的数值研究，获得霜层的拓扑结构时空演化特性，得到不同时刻下结霜量以及霜层的平均厚度、平均密度、平均固相体积分数，探讨冷壁面温度、相对湿度、冷表面浸润性能对结霜的影响.     

束—等离子体放电中低频等离子体波的非稳定性研究

本文采用非中性冷等离子体模型,研究了沿磁场入射的电子束和等离子体相互作用引起的低频等离子体波的非稳定性。计算表明,在束-等离子体放电情况下,振动频率和增长率都随电子束密度增加而增加,当束电流一定时,它们随l增加而略有增加。l=1时其频率数量级与离子迴旋频率相同。l≥3时,振动频率几乎不随k_z变化,其振动频率和增长率数量级与低混杂振荡频率相同,实质是低混杂漂移非稳定性。理论结果与实验一致。     

高温下金属薄膜生长初期的模拟研究

采用实际的生长模型和物理参量,用Monte Carlo方法对高温下金属薄膜的生长过程进行了模拟研究.综合考虑了原子沉积、扩散、成核、生长和扩散原子的再蒸发、原子沿岛周界扩散和岛的合并等众多过程后,模拟得到与实验结果相当一致的薄膜生长形貌及其相应的定量结果.通过动态统计薄膜生长过程中的岛数目及薄膜生长率,得到实验中不易直接获得的高温下薄膜生长的许多细节,如岛数目和薄膜生长率随表面温度、覆盖度变化的详细情况等 关键词： 薄膜 Monte Carlo模拟 成核 岛密度 薄膜生长率     

电子回旋共振等离子体特性及其对生长氮化镓晶膜的影响

为了解并优化在电子回旋共振等离子体辅助化学汽相沉积GaN晶膜的工艺研究中的等离子体特性,利用朗缪尔探针及法拉第筒系统地测量了离子密度(N_i)、等离子体势(V_p)、电子温度(T_e)及离子流强(J_i)等多个等离子体参量随微波功率(P_w)及沉膜室气压(p)变化的关系.给出了在P_w＝850W,p＝0.22Pa时,上述等离子体参量的轴向及径向分布.GaN晶膜的生长速率、电学及晶体学性能 关键词：     

氮气氛下(100)织构金刚石薄膜的成核与生长研究

利用热丝化学气相沉积法研究了氮气浓度对金刚石薄膜成核和生长的影响.实验发现氮气的 加入对金刚石成核密度影响不大,但促进了已形成的金刚石核的长大.适量的氮气不仅使金 刚石生长速率得到很大的提高,而且稳定了金刚石薄膜(100)面的生长,使金刚石薄膜具有 更好的(100)织构.利用原位光发射谱对衬底附近的化学基团进行了研究.研究表明,氮气的 引入使得金刚石生长的气相化学和表面化学性质发生了很大变化.含氮基团的萃取作用提高 了金刚石表面氢原子的脱附速率,从而提高了金刚石膜的生长速率.而含氮基团的选择吸附 使金刚石 关键词： 氮气 金刚石薄膜 织构 原位光发射谱     

磷酸铝(AlPO4)晶体中缺陷的X射线形貌研究

用X射线衍射形貌法研究了AlPO₄晶体中的微观缺陷。在所研究的晶体中,主要晶体缺陷是生长层,沉淀物和位错。位错密度在晶体表面附近最大,晶体中部较低。位错主要起源于热应力和由沉淀物或生长层所造成的晶格畸变。多数位错的柏氏矢量是b=(a+c)<1123>型,部分的是b=a[2110]。分析了晶体缺陷与生长条件之间的关系。控制生长过程中的温度波动,特别是晶体出炉时的冷却速度,对提高晶体完美性是重要的。 关键词：     

THREE-DIMENSIONAL ANALYSIS OF ELECTROMAGNETICALLY PUMPED FREE-ELECTRON-LASER

An analysis of the electromagnetieally pumped free-electron-laser, which includes a solid relativistic electron beam and a cylindrical waveguide, is presented in this paper. Linear and nonlinear dispersion relations are derived. The mode structure is investigated and the instability growth rates are formulated for both the Raman regime and high-gain Compton regime. The results show that the growth rates closely depend on the amplitude and fre-quency of the pump wave, the electron density, and the electron energy. The growth rates are also related to the radii of the electron beam and waveguide, as well as the structure of coupled modes. The growth rates can be greatly enhanced as long as reasonable parameters are chosen. In addition, a comparison of theoretical and experimental results is finally given in the present paper.     

Numerical study of physical properties of resistive wall modes in tokamaks

The effect of plasma with toroidal rotation on the resistive wall modes in tokamaks is studied numerically. An eigenvalue method is adopted to calculate the growth rate of the modes for changing plasma resistivity and plasma density distribution, as well as the diffusion time of magnetic field through the resistive wall. It is found that the resistive wall mode can be suppressed by the toroidal rotation of the plasma. Also, the growth rate of the resistive wall mode decreases when the edge plasma density is the same as the core plasma density, but it only changes slightly with the plasma resistivity.     

利用类铜离子谱线诊断银等离子体电子密度

测量了激光加热块状银靶产生的等离子体XUV光谱.计算了T_e分别为65eV,86eV和130eV时,AgXIX4s-4P,4P-4d,4d-4f7条谱线在不同电子密度时的强度.根据AgXIX4d~2D_(s/2~-)4f~2F_(r/2)和4P~2P_(3/2)-4d~2D_(s/2)两条谱线的强度比,推导了激光银等离子体电子密度.当入射激光功率密度W为6×10~(12)W/cm~2时,银等离子体电子密度N_e=1×10~(20)/cm~3. 关键词：     

The effect of diffusion and overhangs/vacancies on the microstructure of zig-zag thin film

Basing on some growth models of thin film, we have investigated the growth mechanism of glancing angle deposition (GLAD) film. The simulation verifies that the overhangs/vacancies also contribute to the columnar growth as well as the self-shadowing effect for GLAD thin film. Besides, we have studied the effect of the deposition rate, surface and bulk diffusions on the microstructure of thin film using the time-dependent Monte Carlo method. The results show that the surface and bulk diffusions can significantly enhance the packing density of thin film in GLAD growth, and the increase of the deposition rate induce the moderate decrease of the packing density.     

多波长激光同时辐照下熔石英元件的损伤研究

对比研究了3ω单独辐照、3ω＋2ω和3ω＋1ω双波长同时辐照下熔石英元件的初始损伤和损伤增长规律,重点研究3ω能量密度在其阈值附近时,低能量密度的2ω和1ω对初始损伤和损伤增长的影响,分析了波长间的能量耦合效应。结果表明:双波长同时辐照下,当2ω和1ω能量密度远低于其自身阈值时,它们对初始损伤几率和损伤增长阈值的影响可以忽略,但也会参与初始损伤和损伤增长过程,会增加初始损伤程度和损伤增长系数。基于飞秒双脉冲成像的冲击波速度测量表明,3ω和1ω同时辐照下,波长间的能量耦合效应会促进激光能量向材料沉积的效率。     

高温超导YBCO薄膜中的传输交流损耗

基于Norris方程和Bean临界态模型,考虑薄膜超导体内的磁场和电流密度分布特性,通过解析求解的方法推导出薄膜超导体在传输外加电流时其内部的磁场和电流密度以及传输交流损耗的解析表达式,从定量的角度研究超导体截面几何形状对传输交流损耗的影响.结果表明薄膜超导体边缘处的剧烈变化的磁场和电流的分布以及无场区的电流承载能力是...     

ION-BEAM-INDUCED SOLID PHASE CRYSTALLIZATION OF MeV Si+-IMPLANTED Si(100)

The behavior of ion-beam-induced crystallization of a buried amorphous layer created by means of MeV Si⁺ irradiation at 300℃ in Si(100) was studied by Rutherford backscattering and channeling technique. Sohd phase epitaxial crystallizations occurred from both the front and the back amorphous-crystalline(a/c) interfaces with the growth thickness being increased linearly with increasing dose of the annealing ion beam, Nuclear energy deposition was proved to play a dominant role in the process of ion-beam-induced crystallization. The high density of electronic excitation, which could enhance defect production near or at the a/c interface, may thus enhance the nuclearly normalized growth rate of ion-beam-induced crystallization at the front a/c interface.     

Anomalous scaling in surface roughness evaluation of electrodeposited nanocrystalline Pt thin films

Atomic force microscopy (AFM) is used to measure the surface roughness of crystalline Pt thin films as a function of film thickness and growth rate. Our films were electrodeposited on Au/Cr/glass substrates, under galvanostatic control (constant current density), from a single electrolyte containing Pt⁴⁺ ions. Crystalline structure of the films was confirmed by X-ray diffraction (XRD) technique. The effect of growth rate (deposition current density) and film thickness (deposition time) on the kinetic roughening of the films were studied using AFM and roughness calculation. The data is consistent with a rather complex behaviour known as “anomalous scaling” where both local and large scale roughnesses show power law dependence on the film thickness.     

亚稳态fcc-Mn薄膜的生长及其同步辐射光电子能谱研究

报道亚稳态fcc-Mn薄膜在衬底温度为400K的GaAs(001)表面成功外延的结果.进而利用同步辐射光电子能谱研究该fcc-Mn薄膜随厚度变化的过程.从实验上得到fcc-Mn占有态的电子态密度分布,比较分析亚稳态的fcc-Mn相与热力学稳定的a-Mn相之间电子结构的显著差别,并给出可能的机制. 关键词：