A fractal approach to low velocity non-Darcy flow in a low permeability porous medium

In this paper, the mechanism for fluid flow at low velocity in a porous medium is analyzed based on plastic flow of oil in a reservoir and the fractal approach. The analytical expressions for flow rate and velocity of non-Newtonian fluid flow in the low permeability porous medium are derived, and the threshold pressure gradient （TPG） is also obtained. It is notable that the TPG （J） and permeability （K） of the porous medium analytically exhibit the scaling behavior J ~ K-D＇r/（l＋Or）, where DT is the fractal dimension for tortuous capillaries. The fractal characteristics of tortuosity for capillaries should be considered in analysis of non-Darcy flow in a low permeability porous medium. The model predictions of TPG show good agreement with those obtained by the available expression and experimental data. The proposed model may be conducible to a better understanding of the mechanism for nonlinear flow in the low permeability porous medium.     

A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects （SCEs） and the drain induced barrier lowering （DIBL） more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.     

Threshold Multiparty Controlled Teleportation of Arbitrary m-Qubit Quantum Information

We present a （t, .n） threshold multiparty controlled quantum teleportation protocol of an arbitrary m-qubit quantum state between two remote parties. The unknown m-qubit quantum state can be recovered by the receiver under control of a subset of the n controllers if the number of the subset is larger than or equal to a threshold, say, t, but not for any t - 1 or fewer controllers. Our scheme seems to be more practical and more flexible than other existing protocols. The quantum resource required is just m Einstein-Podolsky-Rosen （EPR） pairs plus some single photons. The techniques required are only Bell state measurement, single-qubit unitary operation and yon Neumann measurement. So our scheme is also feasible with present-day technique.     

Investigation on the influence of atomic potentials on the above threshold ionization

We systematically investigate the influence of atomic potentials on the above-threshold ionization （ATI） spectra in one-dimensional （1D） cases and compare them with the three-dimensional （3D） case by numerically solving the time-dependent Schrrdinger equation. It is found that the direct ionization plateau and the rescattering plateau of the ATI spectrum in the 3D case can be well reproduced by the 1D ATI spectra calculated from the supersolid-core potential and the soft-core potential, respectively. By analyzing the factors that affect the yield of the ATI spectrum, we propose a modified-potential with which we can reproduce the overall 3D ATI spectrum. In addition, the influence of the incident laser intensities and frequencies on the ATI spectra calculated from the proposed modified potential is studied.     

High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 (72 A/cm2 per quantum well), and the slope efficiency was 0.2 W/A. The internal loss was 11 cm-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.     

Different Epidemic Models on Complex Networks

Models for diseases spreading are not just limited to SIS or SIR. For instance, for the spreading of AIDS/HIV, the susceptible individuals can be classified into different cases according to their immunity, and similarly, the infected individuals can be sorted into different classes according to their infectivity. Moreover, some diseases may develop through several stages. Many authors have shown that the individuals＇ relation can be viewed as a complex network. So in this paper, in order to better explain the dynamical behavior of epidemics, we consider different epidemic models on complex networks, and obtain the epidemic threshold for each ease. Finally, we present numerical simulations for each case to verify our results.     

Pseudo-differential Operators and Generalized Lax Equations in Symbolic Computation

In this paper, the pseudo-differential operators and the generalized Lax equations in integrable systems are implemented in symbolic software Mathematica. A great deal of differential polynomials which appear in the procedure are dealt with by differential characteristic chain method. Using the program, several classical examples are given.     

Application of thermal stress model to paint removal by Q-switched Nd:YAG laser

In this paper, we demonstrate that thermal stress is the main mechanism in the process of paint removal by Q-switched Nd：YAG laser （λ = 1064 nm, τ = 10 ns）. A theoretical model ofpaint removal by short-pulse laser is established from the perspective of thermal stress. Thermal stress is generated by thermal expansion, and the temperatures of different samples are calculated according to the one-dimensional （1D） heat conduction equation. The theoretical cleaning threshold can be obtained by comparing thermal stress with the adhesion of paint, and the theoretical damage threshold is obtained by calculating the temperature. Moreover, the theoretical calculations are verified by experimental results. It is shown that the thermal stress model of the laser cleaning is very useful to choose the appropriate laser fluence in the practical applications of paint removal by Q-switched Nd： YAG laser because our model can validly balance the efficiency of laser cleaning and the safety of the substrate.     

Design and simulation of a beam position monitor for the high current proton linac

In this paper, the 2-D electrostatic field software, POISSON, is used to calculate the characteristic impedance of a BPM （beam position monitor） for a high current proton linac. Furthermore, the time-domain 3-D module of MAFIA with a beam microbunch at a varying offset from the axis is used to compute the induced voltage on the electrodes as a function of time. Finally, the effect of low β beams on the induced voltage, the sensitivity and the signal dynamic range of the BPM are discussed.     

Enhancement-mode A1GaN/GaN high electronic mobility transistors with thin barrier＊

An enhancement-mode （E-mode） A1GaN/GaN high electron mobility transistor （HEMTs） was fabricated with 15-nm A1GaN barrier layer. E-mode operation was achieved by using fluorine plasma treatment and post-gate rapid thermal annealing. The thin barrier depletion-HEMTs with a threshold voltage typically around -1.7 V, which is higher than that of the 22-nm barrier depletion-mode HEMTs （-3.5 V）. Therefore, the thin barrier is emerging as an excellent candidate to realize the enhancement-mode operation. With 0.6-tim gate length, the devices treated by fluorine plasma for 150-W RF power at 150 s exhibited a threshold voltage of 1.3 V. The maximum drain current and maximum transconductance are 300 mA/mm, and 177 mS/ram, respectively. Compared with the 22-nm barrier E-mode devices, VT of the thin barrier HEMTs is much more stable under the gate step-stress,     

Curved surface effect and emission on silicon nanostructures

The curved surface （CS） effect on nanosilicon plays a main role in the activation for emission and photonic manipulation. The CS effect breaks the symmetrical shape of nanosilicon on which some bonds can produce localized electron states in the band gap. The investigation in calculation and experiment demonstrates that the different curvatures can form the characteristic electron states for some special bonding on the nanosilicon surface, which are related to a series of peaks in photoluminecience （PL）, such as LN, LNO, Lo1, and Lo2 lines in PL spectra due to Si-N, Si-NO, Si=O, and Si-O-Si bonds on curved surface, respectively. Si-Yb bond on curved surface of Si nanostructures can provide the localized states in the band gap deeply and manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as the Lyb line of electroluminescence （EL） emission.     

e^＋e^- → charm cross sections via ISR

We discuss recent measurements of exclusive e^＋e^- cross sections for charmed hadron final states near threshold performed by Belle and BABAR. The results are based on a study of events with initial-stateradiation photons in a large data sample collected with the Belle and BABAR detectors at the T（4S） resonance and nearby continuum.     

Deriving Energy-Gap of Some Nonlinear Hamiltonians by Invariant Eigen-operator Method

By virtue of the invariant eigen-operator method we search for the invariant eigen-operators for some Hamiltonians describing nonlinear processes in particle physics. In this way the energy-gap of the Hamiltonians can be naturally obtained. The characteristic polynomial theory has been fully employed in our derivation.     

Observation of a p^-p mass threshold enhancement in ψ′→ π 〉＋π^-J/ψ（J/ψ 〉 γp^-p） decay

The decay channel ψ′→ π 〉＋π^-J/ψ（J/ψ 〉 γp^-p） is studied using a sample of 1.06 × 10^8 ψ′ events collected by the BESIII experiment at BEPCII. A strong enhancement at threshold is observed in the p^-p invariant mass spectrum. The enhancement can be fitted with an S-wave Breit-Wigner resonance function with a resulting peak mass of M = 1861-13^＋6 （stat）-26^＋7 （syst） MeV/c^2 and a narrow width that is Г 〈 38 MeV/c^2 at the 90% confidence level. These results are consistent with published BESII results. These mass and width values do not match with well established mesons.     

Novel wavelength-accurate InP-based arrayed waveguide grating

A 13-channel, InP-based arrayed waveguide grating （AWG） is designed and fabricated in which the on-chip loss of the central channel is about -5 dB and the crosstalk is less than -23 dB in the center of the spectrum response. However, the central wavelength and channel spacing are deviated from the design values. To improve their accuracy, an optimized design is adopted to compensate the process error. As a result, the central wavelength 1549.9 nm and channel spacing 1.59 nm are obtained in the experiment, while their design values are 1549.32 nm and 1.6 nm, respectively. The route capability and thermo-optic characteristic of the AWG are also discussed in detail.     

Characteristic Numbers of Matrix Lie Algebras

A notion of characteristic number of matrix Lie algebras is defined, which is devoted to distinguishing various Lie algebras that are used to generate integrable couplings of soliton equations. That is, the exact classification of the matrix Lie algebras by using computational formulas is given. Here the characteristic numbers also describe the relations between soliton solutions of the stationary zero curvature equations expressed by various Lie algebras.     

Photoelectric characteristics of silicon P–N junction with nanopillar texture:Analysis of X-ray photoelectron spectroscopy

Silicon nanopillars are fabricated by inductively coupled plasma(ICP) dry etching with the cesium chloride(CsCl)islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus(P) diffusion by liquid dopant source(POCl3) at 870℃ to form P–N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy(XPS) is used to measure the Si 2p core levels of P–N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P–N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light.The energy shift of the Si 2p core level is-0.27 eV for the planar P–N junction and-0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.     

π-electroproduction on hydrogen near threshold at four-momentum transfers of 0.2, 0.4 and 0.6 GeV

The reaction e + p → e + π⁰ + p was measured near the one pion threshold, detecting the final electron and proton in coincidence for values of q² = 0.2, 0.4 and 0.6 GeV². The slope of the cross section at threshold is determined. The data are compared with those of the e + p → e + π⁺ + n reaction, measured simultaneously, and with the results of pseudovector Born approximation and with dispersion theoretical calculations.     

The pion form factor at a timelike momentum transfer of approximately 1 fm from π electroproduction at threshold

From an extrapolation of threshold π⁺ electroproduction data combined with a kinematical constraint at an unphysical point, we derive the value of the pion form factor at a time-like value of the momentum transfer k²_π 1 fm⁻². The result is F_π(k²_π) = 1.19 ± 0.1. From this value, using a twice subtracted dispersion relation, we obtain r_π 0.98 ± 0.24 fm.     

GENERALIZED SCALING LAWS IN THRESHOLD PKENOMENA OF NON-EQUILIBRIUM SYSTEMS

A general discussion on threshold phenomena, namely exponent behaviors of abrupt transitions between steady states near a threshold for a non-equilibrium system satisfying potential condition and having the arbitrary values of z and c, both characteristic parameters of the system, is given. It is shown that the scaling hypothesis in general homogeneous function form holds for threshold phenomena. The expressions of the threshold exponents,β,δ,γ^′ and α^′of the threshold amplitudes, B, D, Γ^′ and A^′,and the generalized scaling laws obeyed by them are all obtained. These Iaws reduce to the same as the scaling laws in critical phenomena when z=c=1.The results support, in respect of exponent behaviors of transitions, the statement on the great similarity between the phase transitions in equilibrium systems and the abrupt transitions of steady states in non-equilibrium systems.