Multiferroic properties of solben gel derived Bi5Fe1-xCoxTi3O15 thin films

Co-doped Bi₅FeTi₃O₁₅ thin films (BFCT-x, Bi₅Fe_1-xCo_xTi₃O₁₅) were prepared using a sol—gel technique. XRD patterns confirm their single phase Aurivillius structure, and the corresponding powder Rietveld analysis indicates the change of space group around x=0.12. The magnetic hysteresis loops are obtained and ferromagnetism is therefore confirmed in BFCT-x thin films. The remanent magnetization (M_r) first increases and reaches the maximum value of 0.42 emu/cm³ at x=0.12 due to the possible Fe³⁺—O—Co³⁺ ferromagnetic coupling. When x = 0.25, the M_r increases again because of the dominant Fe³⁺—O—Co³⁺ ferromagnetic coupling. The remanent polarization (2P_r) of BFCT-0.25 was measured to be as high as 62 μC/cm², a 75% increase when compared with the non-doped BFCT-0 films. The 2P_r remains almost unchanged after being subjected to 5.2 × 10⁹ read/write cycles. Greatly enhanced ferroelectric properties are considered to be associated with decreased leakage current density.     

Multiferroic RMnO3 thin films

Multiferroic materials have received an astonishing attention in the last decades due to expectations that potential coupling between distinct ferroic orders could inspire new applications and new device concepts. As a result, a new knowledge on coupling mechanisms and materials science has dramatically emerged. Multiferroic RMnO₃ perovskites are central to this progress, providing a suitable platform to tailor spin–spin and spin–lattice interactions.With views towards applications, the development of thin films of multiferroic materials have also progressed enormously and nowadays thin-film manganites are available, with properties mimicking those of bulk compounds. Here we review achievements on the growth of hexagonal and orthorhombic RMnO₃ epitaxial thin films and the characterization of their magnetic and ferroelectric properties, we discuss some challenging issues, and we suggest some guidelines for future research and developments.     

Room temperature magnetic properties of Fe and C implanted ZnO films

ZnO films prepared by radio frequency magnetron sputtering were singly or sequentially implanted with 120 keV Fe ions at a fluence of 5 × 10¹⁶ ions/cm² and 20 keV C ions at a fluence of 3 × 10¹⁵ ions/cm². Magnetic and optical properties as well as structures of the films have been investigated using various techniques. Magnetic measurements show that the as-deposited ZnO film presents room temperature ferromagnetism. Single Fe or C ion implantation has no contribution to enhancement in the film magnetism, while magnetic moment increases distinctly in the Fe and C ions sequentially implanted film. Results from structural measurements reveal that Fe nanoparticles are formed in the Fe singly implanted ZnO film. The post C implantation induces dissolution of Fe nanoparticles and promotes Fe atoms to substitute Zn atoms in the lattice. Based on the structural results, the effect of magnetic enhancement has been tentatively interpreted.     

Tailoring the structural and magnetic properties of sol-gel derived Sm-Co nanogranular films

In this study, we investigated the microstructure, phase evolution and magnetic properties of nanogranular films of Sm-Co compounds processed by the sol-gel method. By controlling the compositional ratio of Sm:Co precursor concentration, nanogranular films consisting of three distinct hard magnetic phases namely, Sm₂Co₇, SmCo₅ and Sm₂Co₁₇ with coercivity values of 1.78, 2.94 and 2.12 kOe, respectively, were obtained through this technique.     

热处理参数对溶胶-凝胶法制备氧化锌薄膜特性的影响

采用溶胶-凝胶旋涂法在Si(111)衬底上生长了ZnO薄膜，并用荧光光谱、原子力显微镜和XRD对ZnO薄膜样品进行了分析.结果表明，溶胶-凝胶旋涂法制备的ZnO薄膜为纤锌矿结构，其c轴取向程度与热处理温度有很大的关系.当热处理温度小于550℃时，氧化锌薄膜在室温下均有较强的紫外带边发射峰，而可见波段的发射很弱；当热处理温度高于550℃时，可见波段发射明显增强.对经过不同时间热处理的ZnO薄膜样品分析表明，氧化锌薄膜的荧光特性及表面形貌与热处理时间也有很大关系，时间过短可见波段的发射较强，但时间过长会导致晶 关键词： ZnO薄膜 光致发光     

Gradient-stress on polarization in Ba1-xSrxTiO3 films

A group of position-thickness-dependent stresses are used to modified Landau-Devonshire theory to investigate the second-order phase transition in Ba_1−x Sr _x TiO₃ films. The result shows that the short-range interaction between the unit cells of the film and the substrate induces the phase transition dispersion and the rise of the transition temperature in the films. The dependence of the effective dielectric constant on the temperature and the average spontaneous polarization on the film thickness are computed, which qualitatively agree with the experiments.      

氧气分压对TiO2薄膜结构、磁性及输运性质的影响

采用脉冲激光沉积技术在LaAlO_3(100)基片上制备了TiO_2薄膜,研究了氧气分压对薄膜结构、磁性与输运性质的影响.结构测量表明,TiO_2薄膜的结构与沉积过程中的氧气分压有关,氧气分压的增大有利于薄膜向锐钛矿相转变.磁性测量表明,在较高的氧气分压下制备的TiO_2薄膜表现为顺磁性,在较低氧气分压下制备的TiO_2薄膜表现出明显的室温铁磁性,其铁磁性与氧空位有密切关系.输运测量进一步表明,TiO_2薄膜表现为半导体导电特性,在具有铁磁性的薄膜中还观察到了低温磁电阻效应.     

溶胶-凝胶法制备BaTiO3/SrTiO3多层膜的介电增强效应

采用溶胶凝胶法,在PtTiSiO2Si衬底上逐层制备了BaTiO3SrTiO3多层膜.从多层膜的XRD图可看出明显的双峰,分别对应为BaTiO3和SrTiO3的特征峰,表明样品已形成了多层膜结构.与同厚度的Ba05Sr05TiO3单层膜比较,BaTiO3SrTiO3多层膜的介电系数得到了明显的增强,在频率为10kHz时,周期为66nm的BaTiO3SrTiO3多层膜相对于同厚度的Ba05Sr05TiO3薄膜的介电系数从245增强到595,而损耗依然保持较低,分别为0029和0033.研究同时表明,BaTi 关键词： 溶胶-凝胶法 多层膜 介电增强     

Sol-gel法制备Bi0.85Nd0.15FeO3多铁性薄膜

利用sol-gel法在Pt/Ti/SiO₂/Si衬底上制备出Bi_0.85Nd_0.15FeO₃薄膜.研究退火温度对其晶相形成的影响,发现在450 ℃退火时,Bi_0.85Nd_0.15FeO₃晶相开始形成,但是结晶较差,而且存在杂相;在500—600 ℃退火可以获得单相Bi_0.85Nd_0.15FeO₃薄膜,退火温度升高有利于其结晶.对600 ℃退火的Bi_0.85Nd_0.15FeO₃薄膜的介电、铁电和电磁性能进行了测试.在测试频率为1 MHz时,其介电常数和介电损耗分别为145,0.032;饱和磁化强度大约为44.8 emu/cm³;剩余极化值(2P_r)大约是16.6 μC/cm². 关键词： sol-gel法 0.85Nd_0.15FeO₃薄膜')" href="#">Bi_0.85Nd_0.15FeO₃薄膜 铁电性能 铁磁性能     

溶胶-凝胶VO2薄膜转换特性研究

利用溶胶凝胶法在SiO2Si衬底上沉积高取向的V2O5薄膜,在压强低于2Pa,温度高于400℃的条件下,对V2O5薄膜进行真空烘烤,获得了电阻率变化3个数量级以上、弛豫宽度为62℃的VO2多晶薄膜.以X射线衍射(XRD)、扫描电子显微镜(SEM)图和电阻率转换特性等实验结果为依据,详细分析了溶胶凝胶薄膜在真空烘烤时从V2O5向VO2的转化,它经历了从VnO2n+1(n=2,3,4,6)到VO2的过程.实验证明,根据选择合适的成膜热处理条件和真空烘烤条件是实现溶胶凝胶V2O5结构向VO2结构成功转换的关键 关键词： 溶胶-凝胶法 氧化钒薄膜 VO2膜转换特性     

微结构对Eu掺杂Bi4Ti3O12铁电薄膜铁电性能的影响

采用金属有机物分解法在Pt/Ti/Si(111)基底上制备了退火温度分别为600℃,650℃,700℃的Bi_3.15Eu_0.85Ti₃O₁₂(BET)铁电薄膜,并对其结构及铁电性能进行了测试,再使用扫描探针显微镜对BET薄膜的电畴翻转进行了实时观测.BET薄膜c畴发生180°畴变的最小电压为+6V,而r畴由于其高四方性,即使极化电压增至+12V也不会发生翻转.薄膜的铁电性主要源于c畴的极化,随着退火温度的升高,c畴的区域面积增加,BET薄膜的剩余极化强度随之增大.退火温度为700℃的BET薄膜剩余极化强度达到84μC/cm². 关键词： 铁电薄膜 电畴翻转 扫描探针显微镜     

BiFeO3 thin films: Novel effects

In this paper we report synthesis of phase-pure highly resistive magnetoelectric BiFeO₃ thin films on Pt/TiO₂/SiO₂/Si substrate by using pulsed laser deposition technique. For the first time saturated ferroelectric hysteresis loop has been observed. It has confirmed the presence of ferroelectricity in BiFeO₃ compound. The films exhibit dielectric anomaly near Neel temperature. This anomaly is related to the influence of vanishing magnetic order on the electric order. In situ domain alignment occurs during observation of the films under transmission electron microscope.     

烘烤温度对溶胶-凝胶法制备镧掺杂钛酸铋薄膜结构与铁电性质的影响

采用溶胶-凝胶法，在保持薄膜结晶温度和有机物分解温度相同情况下，发现烘烤温度（即溶剂的挥发温度）对镧掺杂钛酸铋薄膜的晶体结构、表面形貌和铁电性质均产生重要影响.在较低烘烤温度下得到的薄膜（117）择优取向明显.但随着烘烤温度增加，薄膜的（117）择优取向逐渐减弱.薄膜的表面晶粒形貌则从棒状逐渐转变为盘状.还测量了薄膜的铁电性质，发现在250℃烘烤温度下得到的薄膜具有最大的剩余极化强度，2Pr为28.4μC/cm2.对实验现象进行了定性解释. 关键词： 溶胶-凝胶法 烘烤温度 铁电薄膜     

Fundamental absorption edge of thin films of Bi4Si3O12

The fundamental absorption edge of thin films of Bi₄Si₃O₁₂ is investigated. On the basis of its temperature dependence, exciton-phonon interaction is investigated, which made it possible to interpret the absorption edge as the absorption of autolocalized excitons. The temperature dependence of the forbidden band width is given. I. Franko Lvov State University, 50, Dragomanov St., Lvov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 2, pp. 232–235, March–April, 1997.     

Effects of annealing temperature on ultra-low dielectric constant SiO2 thin films derived from sol-gel spin-on-coating

The results of ultra-low dielectric constant (k) SiO₂ films, derived from sol-gel spin-on-coating process using a combination of tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) (mole ratio of TEOS:MTES=4:1), have been reported. The effects of post deposition annealing temperature (300-500 °C for 30 min in argon ambience) on the physical, chemical, and electrical properties of the oxide have been systematically investigated. Filmetric system, Fourier transform-infrared spectroscope, X-ray diffraction system, atomic force microscope, and field-emission scanning electron microscope with energy dispersive X-ray have been employed for physical and chemical analyses. Electrical property of the oxide, in terms of leakage current through the oxide, has also been investigated. The oxide, annealed at 500 °C, produced the lowest dielectric constant value (k=2.3) and the lowest leakage current with no obvious oxide breakdown. The explanation of this observation has been discussed.     

Structure and magnetic properties of Co-substituted NiZn ferrite thin films synthesized by the sol-gel process

Co-substituted NiZn ferrite thin films, Ni_0.5Zn_0.5Co_xFe_2−xO₄ (0≤x≤0.2), were synthesized by the sol-gel process. The structure and magnetic properties of Ni_0.5Zn_0.5Co_xFe_2−xO₄ ferrite thin films have been investigated. The diffraction peak shifted towards the lower angle and the lattice parameter increased with Co substitution. There is little influence of Co substitution on the microstructure of NiZn ferrite thin films. The saturation magnetization gradually increases with the increase in Co substitution when x≤0.10, and decreases when x>0.10. Meanwhile, the coercivity initially decreases with the increase in Co substitution when x≤0.10, and increases when x>0.10.     

The microwave magnetism of epitaxy LiFe5O8 thin film modulated by thickness

Spinel lithium ferrite LiFe₅O₈ (LFO) has attracted robust research interests due to their potential applications in isolators, circulators, and phase shifters. In this work, a series of LFO thin film with various thickness were fabricated on SrTiO₃ (STO) single-crystalline substrates by pulsed laser deposition technology. We systematically investigated the influences of the thickness of LFO thin film on the crystal structure and magnetic properties. The in-plane lattice parameter a and in-plane lattice parameter c were modulated by controlling the thickness of LFO thin film, which was confirmed using reciprocal space mappings (RSMs) technology. Furthermore, the microwave magnetism of LFO thin film with various thickness were studied systematically by ferromagnetic resonance (FMR) measurement. Moreover, with increasing the thickness of LFO thin film from 50 to 180 nm, the difference of the ferromagnetic resonance field between easy- and hard-magnetization axis can be enhanced and reach to 330 Oe. These results illustrate that dynamic magnetic properties can be controlled by tuning the thickness of LFO thin film. Our work provides an effective method to tailor the lattice parameter and modify the magnetic properties of the LFO thin film and contributes to further design high-frequency functional device.     

Doping effects arising from Ni for Fe in PrFeO3 ceramic thin films

Structural, morphological and transport properties of PrFe_{1? x} Ni _x O₃ (x?=?0.1, 0.2, 0.3, 0.4 and 0.5) thin films grown on LaAlO₃ substrate by pulsed laser deposition were studied experimentally. Structural analysis of the samples showed that they have in-plane compressive strain and single-phase epitaxial growth along with c-axis (001) orientation having orthorhombic structure with space group Pbnm. The observed strain is reduced with Ni substitution. The resistivity as a function of temperature follows the variable range hopping (VRH) model up to certain amount of Ni substitution (x?=?0.3) but fails for higher values of x. From the above model, parameters such as density of states at the Fermi level, N(E _F), hopping energy, E _h, and hopping distance R _h, were calculated. Ni substitution leads to an increase in conductivity and this conduction is controlled by disorder-induced localization of charge carriers. With Ni substitution the gap parameter is found to decrease. The enhancement in conductivity and the failure of VRH model for higher doped compositions at high temperature is discussed.     

Transverse piezoelectric properties of Mn-doped Bi0.5Na0.5TiO3 thin films

Lead-free (Bi_0.5Na_0.5)(Ti_1-xMn_x)O₃ (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on Pt/TiO₂/SiO₂/Si substrate. The effect of Mn substitution on crystal structures, surface morphologies, and ferroelectric and transverse piezoelectric properties of BNTMn-x thin films was investigated. The 0.5 mol% Mn-doped (Bi_0.5Na_0.5)(Ti_0.995Mn_0.005)O₃ thin film exhibited a well-saturated ferroelectric P-E hysteresis loop at room temperature. A remnant polarization (P_r) of 16 μC/cm² was obtained for the BNTMn-0.0050 film at an applied electric field of 400 kV/cm. In addition, a 1.12-μm-thick BNTMn-0.0050 film was applied as a cantilever. The Pt/BNTMn-0.0050/Pt/TiO₂/SiO₂/Si unimorph cantilever exhibited a high transverse piezoelectric coefficient ($e_{31}^1$) of 2.43 C/m².     

溶胶-凝胶法制备Li-N双掺p型ZnO薄膜的结构、光学和电学性能

采用溶胶-凝胶法在n型Si(100)衬底上沉积Li-N双掺杂ZnO薄膜,经X射线衍射和扫描电镜图片分析,所制备薄膜具有多晶纤锌矿结构和高的c轴择优取向.室温下霍尔效应测试结果显示Li-N双掺杂ZnO薄膜具有p型导电特性.在Li掺杂量为15.0at%,Li/N（摩尔比）为1∶1,700℃退火等优化条件下得到的最佳电学性能结果是：电阻率为0.34 Ω·cm,霍尔迁移率为16.43 cm²/V·s,载流子浓度为2.79×10¹⁹ cm^{-3关键词： Li-N双掺 p型ZnO薄膜 溶胶-凝胶 性能}