Photorefractive parameters and light-induced absorption in BaTiO3

The light-induced absorption coefficient Δα and the light-intensity dependence of the photorefractive parameters known as the effective trap density N_E, the mobility-recombination product μτ_r and the photoconductivity σ_ph have been measured for four nominally pure BaTiO₃ crystals. The qualitative correlation between Δα, N_E, Δα,N_E, (μτ_r)^?1 and σ_ph has been revealed. The results are explained by the two-center model of deep and shallow traps.     

Effect of Cd impurity on the electrical properties of a-Se80Te20

Temperature dependence of dark and photoconductivity is studied in amorphous films of Se₈₀Te_20−xCd_x in the temperature range (300 K to 380 K) with a view to see the effect of Cd impurity on a-Se₈₀Te₂₀ binary alloy. It is observed that, at low concentration of Cd (x = 0.5), the dark and photoconductivity increase at all temperatures. However, at higher concentration of Cd (x = 10), an appreciable reduction in these parameters occurs in the same temperature range. The photosensitivity (σ_ph/σ_d) remains unchanged at x = 0.5 but decreases quite significantly at x = 10. The results are explained in terms of impurity doping at x = 0.5 and alloying effect at x = 10.     

Observation of Meyer-Neldel rule in thermally activated Poole-Frenkel photoconduction in a-Se<Subscript>70</Subscript>Te<Subscript>30−<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> thin films

In the present paper, we report the compensation effect on photoconductivity of thin films of Se₇₀Te_30−x Cd _x (x = 2, 4, 6) alloys for high field conduction. Steady state photoconductivity measurements have been made in thin films for different electric fields. The photoconduction was found to be ohmic at low fields and Poole-Frenkel type at high fields. Meyer-Neldel rule (MN rule) for the pre-exponential factor (σ _ph)₀ and activation energy (ΔE _ph) of photoconduction in thin films of Se₇₀Te_30−x Cd _x is observed in the present study.     

Electrical and thermal properties of a-(Se70Te30)100−x(Se98Bi2)x (0⩽x⩽20) alloys

In electrical properties, the dc conductivity and photoconductivity measurements have been made in vacuum evaporated thin films of a-(Se₇₀Te₃₀)_100−x(Se₉₈Bi₂)_x system, in the temperature range (308–355 K). It has been observed that dc conductivity and activation energy depend on the Bi concentration. Photocurrent dependence on incident radiation has also been observed which follow the power law (I_ph∝F^γ). Transient photocurrent exhibits the non-exponential decay time. All these parameters show that the recombination within the localized states is predominant. In crystallization kinetics, the heating rate dependence of glass transition and crystallization temperatures is studied to calculate the activation energy for thermal relaxation and activation energy for crystallization. The composition dependence of the activation energy for thermal relaxation and activation energy for crystallization is discussed in terms of the structure of Se–Te–Bi glassy system.     

Thermal conductivity of high-porosity biocarbon precursors of white pine wood

This paper reports on measurements of the thermal conductivity κ and the electrical conductivity σ of high-porosity (cellular pores) biocarbon precursors of white pine tree wood in the temperature range 5–300 K, which were prepared by pyrolysis of the wood at carbonization temperatures (T _carb) of 1000 and 2400°C. The x-ray structural analysis has permitted the determination of the sizes of the nanocrystallites contained in the carbon framework of the biocarbon precursors. The sizes of the nanocrystallites revealed in the samples prepared at T _carb = 1000 and 2400°C are within the ranges 12–35 and 25–70 Å, respectively. The dependences κ(T) and σ(T) are obtained for samples cut along the tree growth direction. As follows from σ(T) measurements, the biocarbon precursors studied are semiconducting. The values of κ and σ increase with increasing carbonization temperature of the samples. Thermal conductivity measurements have revealed that samples of both types exhibit a temperature dependence of the phonon thermal conductivity κ_ph, which is not typical of amorphous (and amorphous to x-rays) materials. As the temperature increases, κ_ph first varies proportional to T, to scale subsequently as ～T ^1.7. The results obtained are analyzed.     

Possible evidence for the relaxation case in CdS

Possible evidence for the effects characteristic of the relaxation case (in which the dielectric relaxation time τ_d=ε? exceeds the minority carrier diffusion length life time τ₀) was observed by photoconductivity experiment in InCdSIn structure. A deviation from linearity in the relationship between conductivity (σ - σ₀) and light intensity (I) is consistent with an analysis based on the theory of relaxation case semiconductor.     

LPCVD a—Si薄膜的缺陷补偿和掺杂

本文通过ESR,σ_D,σ_Ph,SIMS和E_α等测量,对LPCVD方法生长的a-Si材料的掺杂、缺陷补偿和氢化作了研究,发现在这种材料中,虽然不存在可检测得出的氢含量,却仍然能够进行掺杂,特别是在重掺杂区,缺陷得到有效的补偿,E_F向带边移动。文中基于Street最近提出的关于a-Si掺杂的新观点,用缺陷补偿和化学配位等观点解释了没有氢情况下的掺杂机理。 关键词：     

Effect of pressure on the temperature dependence of the thermal conductivity of InSb

The dependence of the thermal conductivity of indium antimonide on temperature (in the range 300–450 K) and hydrostatic pressure (up to 0.4 GPa) has been investigated. It is shown that the phonon thermal conductivity λ_ph obeys the law T ^?n (n ≥ 1). Hydrostatic pressure affects the magnitude and temperature dependence of the thermal conductivity of InSb: with an increase in pressure, the thermal conductivity increases, while the parameter n in the dependence λ_ph ≈ T ^?n decreases.     

Lattice thermal conductivity of compounds with inhomogeneous intermediate rare-earth ion valence

The thermal conductivity κ (within the range 4–300 K) and electrical conductivity σ (from 80 to 300 K) of polycrystalline Sm₃S₄ with the lattice parameter a=8.505 Å (with a slight off-stoichiometry toward Sm₂S₃) are measured. For T>95 K, charge transfer is shown to occur, as in stoichiometric Sm₃S₄ samples, by the hopping mechanism (σ ～ exp(?ΔE/kT) with ΔE ～ 0.13 eV). At low temperatures [up to the maximum in the lattice thermal conductivity κ_ph(T)], κ_ph ～ T ^2.6; in the range 20–50 K, κ_ph ～ T ^?1.2; and for T>95 K, where the hopping charge-transfer mechanism sets in, κ_ph ～ T ^?0.3 and a noticeable residual thermal resistivity is observed. It is concluded that in compounds with inhomogeneous intermediate rare-earthion valence, to which Sm₃S₄ belongs, electron hopping from Sm²⁺ (ion with a larger radius) to Sm³⁺ (ion with a smaller radius) and back generates local stresses in the crystal lattice which bring about a change in the thermal conductivity scaling of κ_ph from T ^?1.2 to T ^?0.3 and the formation of an appreciable residual thermal resistivity.     

Effect of cobalt impurities on the electrical and photoelectrical properties of GaS single crystals

Static dark current-voltage characteristics (CVC's), the temperature dependence of electric conductivity [σ(T)], the currents of thermostimulated depolarization (TSD), the spectral distribution of photoconductivity (SDPC) and photoluminescence (PL) have been studied in GaS 〈0.1 at % Co〉 single crystals.The results of complex investigations of CVC's, σ(T) dependences, TSD, the SDPC and PL show that the forbidden gap of GaS 〈0.1 at % Co〉 single crystals exhibits acceptor levels (E_V + 0.26 and E_V + 0.63 eV).     

Influence of electric current and magnetic field on terahertz photoconductivity in Pb1 − x Sn x Te(In)

Photoconductivity of Pb_{1 ? x} Sn _x Te(In) solid solutions in the terahertz spectral range is defined by a new type of local electron states linked to the quasi-Fermi level. The paper deals with investigation of the influence of electric current and magnetic field on the amplitude of the terahertz photoconductivity in Pb_{1 ? x} Sn _x Te(In) alloys of different composition. It is shown that the density of local electron states responsible for the positive persistent photoconductivity decreases with increasing electric current via a sample, as well as with transition to the hole conductivity in samples with a high content of tin telluride (x > 0.26). It is found that the magnetic field dependence of the positive photoconductivity is non-monotonous and has a maximum. The maximum position in magnetic field is proportional to the terahertz radiation quantum energy. Mechanisms responsible for the effects observed are discussed.     

Anisotropy of photoconductivity and nonlinear effects in GaSe monocrystals at high optical excitation

In this work, the photoelectric properties of gallium selenide (GaSe) monocrystals in the edge absorption region, with various configurations of current contacts, at low and high optical excitation levels are investigated. The photoconductivity spectrum behavior is determined by localized electronic and excitonic states along c-axis. It is shown that the localization of electronic and excitonic states in one-dimensional fluctuation potential along c-axis results to an anisotropy in photoconductivity spectrum at various current contacts configurations. At E⊥c the photoconductivity is observed in the hν < E_g and hν > E_g regions. In the case of hv < E_g, the maximum photoconductivity, in the impurity and exciton absorption region are observed at 1.975 eV and 2.102 eV, respectively. With rising of excitation energy level, suppression of photoconductivity in the exciton absorption region and increases in impurity absorption region is observed. At E||c contact configuration, the considerable photoconductivity is observed only in the impurity absorption region, which also increases with rising of excitation level. It is supposed that, suppression of photoconductivity in the exciton absorption region at high excitation levels is connected with exciton-exciton interaction, which results to a nonlinear light absorption. The results are compared with the absorption and photoluminescence measurements.     

Line phosphorescence spectrum of octachlorodibenzo-p-dioxine at 4.2 K

The line phosphorescence spectrum of octachlorodibenzo-p-dioxine (OCDX) is obtained and interpreted. The symmetry of the lowest triplet state of this molecule is established. The vibrational frequencies found from the vibronic phosphorescence spectrum at 4.2 k are assigned to the vibrational modes of certain symmetry related to individual functional atomic groups of the molecule. The relation between contributions from the spin-orbit (SO) and vibronic-spin-orbit (VSO) interactions to the phosphorescence rate constant k _ph of the OCDX molecule is found from the vibronic line intensities. It is found that the increase in the number of Cl atoms in OCDX compared to that in tetrachlorobenzo-p-dioxine results in the increase in the relative contribution of the VSO interaction to k _ph.     

The temperature dependence of optical gap and photoconductivity threshold in undoped hydrogenated amorphous silicon films

We report on the temperature dependences of the optical gap E_o and the photoconductivity threshold (?ω)_o for undoped hydrogenated amorphous silicon films. When increasing the temperature, both E_o and (?ω)_o are seen to linearly decrease at respective rates β= 3.5 10^?4 eV K^?1 (temperature range 290 K–460 K) and γ= 5.2 10^?4 eV K^?1 (temperature range 220 K – 360 K). At higher temperatures E_o decreases at the rate β = 14.3 10^?4 ev K^?1. Our results are discussed in terms of conduction in extended states. We show there is no physical reason in relating the temperature dependence of the activation energy and that of the gap as generally assumed. From optical absorption we deduce a minimum metallic conductivity σ_min the value of which agrees with Mott's predictions. On the contrary, σ_min measured from dark conductivity is nearly two orders of magnitude lower. A discussion is proposed infering band bending at the film substrate interface.     

Photoconductivity of poly-<Emphasis Type="Italic">p</Emphasis>-xylylene + CdS nanocomposite films over a wide temperature range

For poly-p-xylylene + CdS (PPX + CdS) nanocomposite films, the dependences of the photo-conductivity σ _ph (T) on the concentration C of CdS nanoparticles, intensity and wavelength of exciting light, and temperature T within 15–300 K are examined. An appreciable photocurrent appears at C ≥ 10 vol %, when a large percolation cluster of CdS nanoparticles is formed. The photocurrent spectrum is compared to the absorption spectrum of the film. The photocurrent I _ph (P) increases with the intensity of light flux P in a wavelength range near 435 nm according to the I _ph (P) ∼ P ⁿ power law, where n < 1. At 15 K, the photoconductivity of films with C ≈ 11.5 and 13.5 vol % is higher than that of a pure CdS film (C = 100 vol %) by factors of ≈100 and ≈30, respectively. For films with C > 11.5 vol %, the σ _ph (T) dependence at low T exhibits a metal-like character (σ _ph (T) decreases with increasing temperature). Atomic force microscopy is used to examine the surface topography of PPX + CdS films, which is found to be strongly dependent on the concentration of nanoparticles. The dark conductivity and photoconductivity of nanocomposite films arise due to the thermo- and photoexcitation transfer of electrons from the CdS nanoparticles to the PPX matrix with the formation of an electronic double layer at the PPX matrix-large percolation CdS cluster interface, a process that populates the phenyl rings of the adjacent PPX layer with excess electrons. As a result, various mechanisms of electron transfer in the polymer matrix can be realized: Mott’s hopping conduction mechanism with variable-range hopping in the matrix between CdS clusters and the metal-like behavior of the conductivity in the polymer shell of the large cluster at low temperatures. The polymer shell contains excess electrons on the phenyl rings -C₆H₄- in the composition of anion-resonances -C₆H₄⁻-.     

Photoconductivity studies of Te-substituted Sn-Sb-Se semiconducting films

Amorphous thin films of chalcogenide Sn₁₀Sb₂₀Se_70?X Te _X (0≤X≤8) composition were deposited using the thermal evaporation technique. The dark conductivity measurement showed a thermally activated conduction process with single activation energy in a studied temperature regime. Photoconductivity showed no maxima in the measured temperature regime revealing that the material belongs to the type II photoconductor. The observed small difference between activation energy for photoconduction ΔE _ph and dark conduction ΔE accounts for low photosensitivity of the material. The intensity variation of the photocurrent obeys the power law with the exponent γ～0.56–0.64 revealing the dominant bimolecular recombination mechanism in the studied compositions. Transient photoconductivity revealed that initial rise of the photocurrent becomes slow with tellurium content in the sample. The change in the shape of the transient photocurrent with composition is qualitatively explained based upon change in defect statistics introduced by the tellurium content in the sample. The decay process after the initial decay was found to be nonexponential and is described with a differential life time of charge carrier that showed a decreasing trend with the tellurium content in the sample.     

Effect of excitation intensity and electric field on the photoconductivity relaxation in CdxHg1−x Te/GaAs polycrystalline layers

The photoconductivity relaxation and the stationary photoconductivity in the n-Cd_0.8Hg_0.2Te compensated polycrystalline layers at T=300 K have been investigated as a function of the light intensity and the strength of applied electric field E. It is demonstrated that, at low excitation intensities, the saturation of stationary photoconductivity and a decrease in the relaxation time with an increase in E are caused by the minority carrier extraction. The effect of minority carrier extraction is analyzed with due regard for the internal electric field of potential barriers in intergranular layers. It is assumed that the features of nonequilibrium-carrier recombination, which proceeds through several channels and depends on the excitation intensity and extraction electric field strength, can stem from the polycrystalline structure of the Cd_0.8Hg_0.2Te layers.     

Study of cross sections for the loss of outer 1s, 2s, and 2p electrons by fast ions and atoms of light elements

In the case of light-element ions propagating with velocities V = 1.83 and 3.65 au in H₂, He, N₂, Ne, and Ar, the loss cross sections σ_{i, i+m} for m electrons (m = 1, 2, 3) are considered. The partial loss cross sections σ_i(nl) for one of the outer 1s, 2s, or 2p electrons are determined using the obtained data. It is shown that the experimental cross sections for the loss of the 1s and 2s electrons by positive ions qualitatively agree with the theoretical values calculated in the Born approximation. In the case of the ion velocity V = 1.83 au, the cross sections σ_i for 2p electrons are greater than the cross sections σ_i (1s) and σ_i (2s) by a factor of 1.2–3 for the same binding energies of electrons in the ion (I _nl > 20 eV). It is found experimentally that, at V = 1.83 au, the cross sections σ_i (2p) for I _nl ～ 10–20 eV are less than the cross sections σ_i (1s) by a factor of 2–3, which is probably caused by a decrease in the screening parameter (θ_2p < 1) of the outer shell of atoms.     

On the possibility of determining the diffusion length of excitons in semiconductors from photomagnetic measurement data

The effect of a magnetic field on the photocurrent I_ph in Si and GaAs solar cells is investigated. It is shown that the observed change in the photocurrent I_ph of the solar cells in response to a magnetic field can be caused by a decrease in the diffusion length of excitons L_exc. A simplified model of the photomagnetic experiment is proposed to estimate the diffusion length of excitons L_exc and the contribution made by excitons to the photocurrent of the solar cells.     

Acoustic emissioin monitoring of strength in brittle materials

It has been established that for porcelain, ferrite and cement-porcelain mortar the tensile strength, σ_F, during subsequent loading is closely related to the stress σ_O at which during the unloading period of the proof test the acoustic emission (AE) response changes from a continuous activity to a discrete one. The coefficients in the equation σ_F = A + Bσ_O in bending were found to be the same as those for radial compression. For a very homogeneous material with no continuous AE during unloading, σ_F correlates well with the relative change, κ, in pulse amplitude when two proof tests are carried out. The relationships σ_F(σ_O) and σ_F(κ) are independent of the mode and direction of abrasive machining.