高亮度布拉格反射波导激光器

设计并制备了808 nm波长布拉格反射波导激光器,在垂直方向采用光子带隙效应进行光场限制,实现了超大光模式体积和单横模激射。所制备的10μm条宽、未镀腔面膜的器件在室温、准连续条件下的总输出功率可超过650 mW,最高功率受热扰动限制。激光器垂直方向和水平方向的远场发散角半高全宽分别为8.3°和8.1°,这种近圆形的光束输出可以有效地提高激光器的耦合效率。     

2μm GaSb基低垂直发散角布拉格反射波导激光器优化设计

为实现2 μm低发散角激光,提出在GaSb基半导体激光器中引入布拉格反射波导,利用光子带隙效应替代传统的全反射进行光场限制。研究了分布反馈反射镜(DBR)的厚度、对数、高低折射率DBR厚度比以及中心腔厚度等参数对激光器垂直远场发散角和光限制因子的影响。结果表明:垂直远场发散角随单对DBR厚度的增加而减小;光限制因子与远场发散角都随拉格反射镜对数的增加而减小,随高低折射率DBR厚度比的减小而增大;随着中心层厚度的增大,光限制因子减小而远场发散角增大。最终在理论上优化设计出了一种双边布拉格反射波导结构的超低垂直发散角2 μm GaSb基边发射半导体激光器,其垂直远场发散角可降低到10°以下。     

布拉格反射波导激光器的光谱特性（英文）

设计并制备了基于双边非1/4波长布拉格反射波导的边发射半导体激光器,中心腔采用低折射率材料,在垂直方向利用布拉格反射进行光限制,实现了超大光斑尺寸且稳定单横模工作。10μm条宽、未镀膜的脊型激光器在准连续和连续工作方式下的总的输出功率分别超过了170 mW和80 mW,且最高功率受热扰动限制。激光器远场图案在垂直方向为双瓣状,单瓣垂直方向和水平方向发散角分别低至7.85°和6.7°。激射谱半高全宽仅为0.052 nm,光谱包络存在周期性调制现象,模式间隔约为3.3 nm。电流增加到300 mA以上时,激光器出现模式跳变。     

一种基于布拉格反射波导的表面等离子体激光光源（英文）

设计了一种基于布拉格反射波导的新型表面等离子体激光光源。这种光源结构简单,便于集成,可以在室温电泵浦的条件下工作,同时可以输出约毫瓦量级的表面等离子激光,相比于文献报道中纳米尺度的纳瓦级表面等离子体激光光源要高很多。该表面等离子体激光光源发射波长为808 nm,布拉格反射波导所提供的倾斜激光光线在我们设计的准Otto模型中可以直接耦合成为表面等离子体。     

单频窄线宽分布布拉格反射光纤激光器研究

分析了单频窄线宽分布布拉格反射（DBR）光纤激光器的单模工作条件,在此基础上算出单模工作区域,制作了一个单频窄线宽分布布拉格反射光纤激光器。该激光器在波长为975.5nm的半导体激光器抽动下,在1556.91nm波长处。当抽运功率为55.35mW时输出功率可达1.43mW,频宽小于1.2MHz(受测量仪器分辨率限制）。经测量,该输出激光是稳定的单纵模输出。     

分布布拉格反射光纤激光器的特性分析

利用耦合模理论和数值方法,对分布布拉格反射光纤激光器的特性进行分析,对利用不同光栅作反射镜的激光器阈值增益谱进行了比较。为进一步的设计与制作提供了理论指导。     

光纤光栅外腔分布布拉格反射激光器中的波长转换

报道了一种新型的基于光纤光栅外腔分布布拉格反射激光器的波长转换技术，获得了８ｎｍ的波长转换间隔，对注入信号的灵敏度、转换信号之间的反相特性等进行了测量研究。讨论了波长转换的机理和该技术的特点和优点。     

电流调谐光纤光栅外腔分布布拉格反射激光器

报道一种新颖的波长可调谐光纤光栅外腔分布拉格反射激光器。把经过金属管封装的光纤面布拉格光栅作为激光二极管的外腔反射镜,得到的单模激光输出不仅线宽窄,边模抑制比高,而且,调节流过金属管的电流,可在5nm范围内的6个不同波长间转换。     

窄带高反射光纤布拉格反射滤波器

利用改进的非对称六层波导模型，分析了光纤布拉格反射滤波器的特性。讨论了波导结构参数－主要是高折射率层的厚度对器件特性的影响，指出了在制作过程中控制器件反射率的途径。     

胆甾相液晶可见光布拉格反射实验

胆甾相液晶可见光反射行为，在某种意义上与晶体粉末样品Ｘ光衍射相似，本主要提供一个巧妙而又直观的布拉格反射实验方法，并测量胆甾相结构周期－螺距与温度的关系，进而揭示胆甾相液晶热色效应的机理。     

A photonic crystal waveguide with silicon on insulator in the near-infrared band

A two-dimensional (2D) photonic crystal waveguide in the \Gamma--K direction with triangular lattice on a silicon-on-insulator (SOI) substrate in the near-infrared band is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. Its transmission characteristics are analysed from the stimulated band diagram by the effective index and the 2D plane wave expansion (PWE) methods. In the experiment, the transmission band edge in a longer wavelength of the photonic crystal waveguide is about 1590\,nm, which is in good qualitative agreement with the simulated value. However, there is a disagreement between the experimental and the simulated results when the wavelength ranges from 1607 to 1630\,nm, which can be considered as due to the unpolarized source used in the transmission measurement.     

A ministop band in a single-defect photonic crystal waveguide based on silicon on insulator

This paper reports that a two-dimensional single-defect photonic crystal waveguide in the Г-K direction with triangular lattice on a silicon-on-insulator substrate is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. A ministop band （MSB） is observed by the measurement of transmission characteristics. It results from the coupling between the two modes with the same symmetry, which is analysed from the stimulated band diagram by the effective index and the two-dimensional plane wave expansion methods. The parameter working on the MSB is the ratio of the radius of air holes to the lattice constant, fla. It is obtained that the critical τ/a value determining the occurrence or disappearance of MSB is 0.36. When τ/a is larger than or equal to 0.36, the MSB occurs. However, when τ/a is smaller than 0.36, the MSB disappears.     

A ministop band in a single-defect photonic crystal waveguide based on silicon on insulator

This paper reports that a two-dimensional single-defect photonic crystal waveguide in the \textit{$\Ga$-K} direction with triangular lattice on a silicon-on-insulator substrate is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. A ministop band (MSB) is observed by the measurement of transmission characteristics. It results from the coupling between the two modes with the same symmetry, which is analysed from the stimulated band diagram by the effective index and the two-dimensional plane wave expansion methods. The parameter working on the MSB is the ratio of the radius of air holes to the lattice constant, $r/a$. It is obtained that the critical $r/a$ value determining the occurrence or disappearance of MSB is 0.36. When $r/a $ is larger than or equal to 0.36, the MSB occurs. However, when $r/a $ is smaller than 0.36, the MSB disappears.     

Ge0.05Si0.95/Si异质结单模共面布拉格反射波导光栅的设计与分析

GeSi/Si异质结布拉格反射光栅是硅基光电集成领域一种重要的集成光学器件,分析GeSi/Si异质结的传光特性和布拉格条件,通过求解布拉格光栅方程,得出耦合系数和耦合效率。利用上述原理设计出入射角为66°,波导层的厚度为2μm,光栅长度为4252μm,槽深为0.05μm,光栅周期为0.456μm,滤波带宽为0.214nm,耦合效率为84.1%的1.3μm Ge_0.05Si_0.95/Si异质结单模共面布拉格反射光栅,并用数值模拟了入射光波电场和反射光波电场的分布。     

980 nm半导体激光器n型波导结构优化

为了提高980 nm半导体激光器的输出功率并获得较小的远场发散角,在非对称波导结构的基础上设计了n型波导结构,即在n型波导中引入高折射率的内波导层。采用理论计算和SimLastip软件模拟对常规非对称波导结构和内波导结构进行了研究。利用分子束外延系统生长980 nm内波导结构的外延材料, 并制作了激光器。对于条宽为100 m、腔长为1000 m的器件,阈值电流为97 mA,斜率效率为1.01 W/A;当注入电流为500 mA时,远场发散角为29(垂直向) 8(水平向),与模拟结果相符。理论计算和实验结果表明：较之于常规非对称波导结构,内波导结构可有效降低光场限制因子,提高输出功率,减小远场发散角。     

Lateral characteristics improvements of DBR laser diode with tapered Bragg grating

Broad area semiconductor laser (BAL) has poor lateral beam quality due to lateral mode competition, which limits its application as a high-power optical source. In this work, the distributed Bragg reflector laser diode with tapered grating (TDBR-LD) is studied. By changing the lateral width, the tapered grating increases the loss of high-order lateral modes, thus improving the lateral characteristics of the laser diode. The measuring results show that the TDBR-LD can achieve a single-lobe output under 0.9 A. In contrast to the straight distributed Bragg reflector laser diode (SDBR-LD), the lateral far field divergence of TDBR-LD is measured to be 5.23° at 1 A, representing a 17% decline. The linewidth of TDBR-LD is 0.4 nm at 0.2 A, which is reduced by nearly 43% in comparison with that of SDBR-LD. Meanwhile, both of the devices have a maximum output power value of approximate 470 mW.     

紫外固化型聚合物高阶布拉格波导光栅滤波器

利用紫外固化材料SU-82005与热交联聚合物甲基丙烯酸甲酯一甲基丙烯酸缩水甘油酯[P（MMA—GMA）]分别作为波导芯层和包层材料,通过直接光刻技术,成功实现了厚度为5μm,宽度为9μm,光栅高度为4μm的起伏型高阶布拉格波导光栅滤波器。对光栅器件的谐振波长,光透射率等重要参数进行了模拟设计。测得制备的聚合物高阶布拉格波导光栅滤波器的谐振波长为1550．4nm,消光比为23dB,3-dB带宽为2nm。     

Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

Performances of blue and green laser diodes(LDs) with different u-InGaN upper waveguides(UWGs) are investigated theoretically by using LASTIP. It is found that the slope efficiency(SE) of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In_(0.05) Ga_(0.95)N lower waveguide(LWG) is designed to reduce the optical loss, and its slope efficiency is improved significantly.