Vertical WS_2 spin valve with Ohmic property based on Fe_3GeTe_2 electrodes

The two-dimensional(2 D) transition-metal dichalcogenides(TMDCs) have been recently proposed as a promising class of materials for spintronic applications. Here, we report on the all-2 D van der Waals(vd W) heterostructure spin valve device comprising of an exfoliated ultra-thin WS_2 semiconductor acting as the spacer layer and two exfoliated ferromagnetic Fe_3 GeTe_2(FGT) metals acting as ferromagnetic electrodes. The metallic interface rather than Schottky barrier is formed despite the semiconducting nature of WS_2, which could be originated from the strong interface hybridization. The spin valve effect persists up to the Curie temperature of FGT. Moreover, our metallic spin valve devices exhibit robust spin valve effect where the magnetoresistance magnitude does not vary with the applied bias in the measured range up to 50 μA due to the Ohmic property, which is a highly desirable feature for practical application that requires stable device performance. Our work reveals that WS_2-based all-2 D magnetic vd W heterostructure, facilitated by combining 2 D magnets, is expected to be an attractive candidate for the TMDCs-based spintronic applications.     

Strain drived band aligment transition of the ferromagnetic VS_2/C_3N van der Waals heterostructure

Exploring two-dimensional(2 D) magnetic heterostructures is essential for future spintronic and optoelectronic devices.Herein,using first-principle calculations,stable ferromagnetic ordering and colorful electronic properties are established by constructing the VS_2/C_3 N van der Waals(vdW) heterostructure.Unlike the semiconductive properties with indirect band gaps in both the VS_2 and C_3 N monolayers,our results indicate that a direct band gap with type-Ⅱ band alignment and p-doping characters are realized in the spin-up channel of the VS_2/C_3 N heterostructure,and a typical type-Ⅲband alignment with a broken-gap in the spin-down channel.Furthermore,the band alignments in the two spin channels can be effectively tuned by applying tensile strain.An interchangement between the type-Ⅱ and type-Ⅲ band alignments occurs in the two spin channels,as the tensile strain increases to 4%.The attractive magnetic properties and the unique band alignments could be useful for prospective applications in the next-generation tunneling devices and spintronic devices.     

Magnetic van der Waals materials: Synthesis,structure, magnetism,and their potential applications

As the family of magnetic materials is rapidly growing, two-dimensional (2D) van der Waals (vdW) magnets have attracted increasing attention as a platform to explore fundamental physical problems of magnetism and their potential applications. This paper reviews the recent progress on emergent vdW magnetic compounds and their potential applications in devices. First, we summarize the current vdW magnetic materials and their synthetic methods. Then, we focus on their structure and the modulation of magnetic properties by analyzing the representative vdW magnetic materials with different magnetic structures. In addition, we pay attention to the heterostructures of vdW magnetic materials, which are expected to produce revolutionary applications of magnetism-related devices. To motivate the researchers in this area, we finally provide the challenges and outlook on 2D vdW magnetism.     

Magnetic two-dimensional van der Waals materials forspintronic devices

Magnetic two-dimensional (2D) van der Waals (vdWs) materials and their heterostructures attract increasing attention in the spintronics community due to their various degrees of freedom such as spin, charge, and energy valley, which may stimulate potential applications in the field of low-power and high-speed spintronic devices in the future. This review begins with introducing the long-range magnetic order in 2D vdWs materials and the recent progress of tunning their properties by electrostatic doping and stress. Next, the proximity-effect, current-induced magnetization switching, and the related spintronic devices (such as magnetic tunnel junctions and spin valves) based on magnetic 2D vdWs materials are presented. Finally, the development trend of magnetic 2D vdWs materials is discussed. This review provides comprehensive understandings for the development of novel spintronic applications based on magnetic 2D vdWs materials.     

Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

We numerically study the general valley polarization and anomalous Hall effect in van der Waals (vdW) heterostructures based on monolayer jacutingaite family materials Pt₂AX₃ (A = Hg, Cd, Zn; X = S, Se, Te). We perform a systematic study on the atomic, electronic, and topological properties of vdW heterostructures composed of monolayer Pt₂AX₃ and two-dimensional ferromagnetic insulators. We show that four kinds of vdW heterostructures exhibit valley-polarized quantum anomalous Hall phase, i.e., Pt₂HgS₃/NiBr₂, Pt₂HgSe₃/CoBr₂, Pt₂HgSe₃/NiBr₂, and Pt₂ZnS₃/CoBr₂, with a maximum valley splitting of 134.2 meV in Pt₂HgSe₃/NiBr₂ and sizable global band gap of 58.8 meV in Pt₂HgS₃/NiBr₂. Our findings demonstrate an ideal platform to implement applications on topological valleytronics.     

Recent advances in two-dimensional layered and non-layered materials hybrid heterostructures

With the development of Moore's law, the future trend of devices will inevitably be shrinking and integration to further achieve size reduction. The emergence of new two-dimensional non-layered materials (2DNLMs) not only enriches the 2D material family to meet future development, but also stimulates the global enthusiasm for basic research and application technologies in the 2D field. Van der Waals (vdW) heterostructures, in which two-dimensional layered materials (2DLMs) are physically stacked layer by layer, can also occur between 2DLMs and 2DNLMs hybrid heterostructures, providing an alternative platform for nanoelectronics and optoelectronic applications. Here, we outline the recent developments of 2DLMs/2DNLMs hybrid heterostructures, with particular emphasis on major advances in synthetic methods and applications. And the categories and crystal structures of 2DLMs and 2DNLMs are also shown. We highlight some promising applications of the heterostructures in electronics, optoelectronics, and catalysis. Finally, we provide conclusions and future prospects in the 2D materials field.     

Spintronic with semiconductors

Soon afterwards the discovery of the giant magnetoresistance in metallic multilayers, researchers have attempted to integrate spintronic properties with semiconductor materials. They came up against several difficulties related to the structural and electronic properties of the ferromagnetic metal-semiconductor interface. We will report on the recent progress made in this field of spintronic with semiconductors. First of all we will explain the interfacial resistance conditions required to inject and detect efficient spin current in a semiconductor and in a second part we will show that efficient spin injection experiments have been now achieved thanks to the addition of a tunnel resistance at the interface. We will then report on the magnetoresistance experiment performed with diluted magnetic semiconductors as ferromagnetic material. This type of material can constitute an alternative road to achieving electrical control spintronic devices. Finally, we will finish by reporting on research for a highly spin-polarized source to inject spin-polarized current in a semiconductor. It will be mainly focused on tunnel magnetoresistance junctions with semiconductor barriers and hot electron transistor. To cite this article: J.-M. George et al., C. R. Physique 6 (2005).     

Review of Raman spectroscopy of two-dimensional magnetic van der Waals materials

Ultrathin van der Waals (vdW) magnets provide a possibility to access magnetic ordering in the two-dimensional (2D) limit, which are expected to be applied in the spintronic devices. Raman spectroscopy is a powerful characterization method to investigate the spin-related properties in 2D vdW magnets, including magnon and spin-lattice interaction, which are hardly accessible by other optical methods. In this paper, the recent progress of various magnetic properties in 2D vdW magnets studied by Raman spectroscopy is reviewed, including the magnetic transition, spin-wave, spin-lattice interaction, symmetry tuning induced by spin ordering, and nonreciprocal magneto-phonon Raman scattering.     

二维范德瓦尔斯异质结构的制备与物性研究

二维范德瓦尔斯材料(可简称二维材料)已发展成为备受瞩目的材料大家族,而由其衍生的二维范德瓦尔斯异质结构的集成、性能及应用是现今凝聚态物理和材料科学领域的研究热点之一.二维范德瓦尔斯异质结构为探索丰富多彩的物理效应和新奇的物理现象,以及构建新型的自旋电子学器件提供了灵活而广阔的平台.本文从二维材料的转移技术着手,介绍二维范德瓦尔斯异质结构的构筑、性能及应用.首先,依据湿法转移和干法转移的分类,详细介绍二维范德瓦尔斯异质结构的制备技术,内容包括转移技术的通用设备、常用转移方法的具体操作步骤、三维操纵二维材料的方法、异质界面清洁.随后介绍二维范德瓦尔斯异质结构的性能和应用,重点介绍二维磁性范德瓦尔斯异质结构,并列举在二维范德瓦尔斯磁隧道结和摩尔超晶格领域的应用.因此,二维材料转移技术的发展和优化将进一步助力二维范德瓦尔斯异质结构在基础科学研究和实际应用上取得突破性的成果.     

二维范德瓦尔斯异质结构的制备与物性研究

二维范德瓦尔斯材料(可简称二维材料)已发展成为备受瞩目的材料大家族,而由其衍生的二维范德瓦尔斯异质结构的集成、性能及应用是现今凝聚态物理和材料科学领域的研究热点之一.二维范德瓦尔斯异质结构为探索丰富多彩的物理效应和新奇的物理现象,以及构建新型的自旋电子学器件提供了灵活而广阔的平台.本文从二维材料的转移技术着手,介绍二维范德瓦尔斯异质结构的构筑、性能及应用.首先,依据湿法转移和干法转移的分类,详细介绍二维范德瓦尔斯异质结构的制备技术,内容包括转移技术的通用设备、常用转移方法的具体操作步骤、三维操纵二维材料的方法、异质界面清洁.随后介绍二维范德瓦尔斯异质结构的性能和应用,重点介绍二维磁性范德瓦尔斯异质结构,并列举在二维范德瓦尔斯磁隧道结和摩尔超晶格领域的应用.因此,二维材料转移技术的发展和优化将进一步助力二维范德瓦尔斯异质结构在基础科学研究和实际应用上取得突破性的成果.     

On the understanding of the microscopic origin of the properties of diluted magnetic semiconductors by atom probe tomography

Spintronics, in which both the spin and charge of electrons are used for logic and memory operations, promises to revolutionize the current information technology. Just as silicon supports microelectronics, diluted magnetic semiconductors (DMSs) will be the platform of spintronics. Ideal DMSs should maintain ferromagnetic and semiconducting properties at operating temperatures to realize the spintronic functions. Although many high-temperature Curie temperature DMSs have been reported, the origin of ferromagnetism remains controversial. Currently, this is a major obstacle to the development of spintronic devices. The solution to this problem depends on a more complete understanding of DMS microstructure, especially the distribution of doped magnetic ions at atomic resolution and any defects introduced. Therefore, an analysis technique is required, possessing both high spatial and elemental resolutions, which is beyond the capability of conventional techniques, such as electron microscopy. However, atom probe tomography (APT), which recently has been successfully applied to nanoscale characterization of structural materials, has the potential to provide the unique combination of near atomic spatial and elemental resolutions needed for such an investigation.     

Controlled vapor growth of 2D magnetic Cr_2Se_3 and its magnetic proximity effect in heterostructures

Two-dimensional(2 D) magnetic materials have aroused tremendous interest due to the 2 D confinement of magnetism and potential applications in spintronic and valleytronic devices. However, most of the currently 2 D magnetic materials are achieved by the exfoliation from their bulks, of which the thickness and domain size are difficult to control, limiting the practical device applications. Here, we demonstrate the realization of thickness-tunable rhombohedral Cr_2Se_3 nanosheets on different substrates via the chemical vapor deposition route. The magnetic transition temperature at about 75 K is observed. Furthermore, van der Waals heterostructures consisting of Cr_2Se_3 nanosheets and monolayer WS_2 are constructed.We observe the magnetic proximity effect in the heterostructures, which manifests the manipulation of the valley polarization in monolayer WS_2. Our work contributes to the vapor growth and applications of 2 D magnetic materials.     

铁磁共振磁交换力显微镜

原子间的自旋相互作用力对原子级别磁性纳米构造体的表面磁性质的理解是极为重要的. 磁交换力显微镜是测量表面自旋作用力的重要手段, 但它的缺点一是需要加外部强磁场, 二是不能分离表面形貌和自旋信息, 这就导致材料表面受外部磁场的影响, 而且表面形貌和自旋信息之间相互影响, 使自旋间的相互作用力的检测和成像研究受到限制.为了解决上述问题, 利用原子力显微镜, 并采用微波照射的方法, 根据铁磁共振原理, 分别独立提取磁性材料表面形貌和自旋信息, 称之为铁磁共振磁交换力显微镜, 理论和实验结果表明此方法可以有效地分离两种信息. 铁磁共振磁交换力显微镜可以促进对原子级磁性材料机能的理解以及磁性相关科学领域的进步, 特别是对自旋电子元件的发展有很大的促进作用, 是新世纪高度信息化社会不可缺少的测量技术. 关键词： 原子力显微镜 磁交换力显微镜 自旋 铁磁共振     

纳米级自旋电子学材料取得重要进展

因为纳米级的自旋电子学器件需要在纳米尺度上仍能在较高温度下保持优异性能的高自旋极化率材料，故与半导体相容的半金属铁磁体近来受到高度重视．文章介绍作者在这个方向上研究工作的最新重要进展：通过大规模系统的高精度第一原理计算，作者发现三个3d过渡金属硫系化合物的闪锌矿相具有优异的半金属铁磁性，并且其结构性能适合做成具有足够厚度的薄膜或层状材料，便于应用于纳米级自旋电子学器件。     

Tunneling Anisotropic Magnetoresistance in L1_0-MnGa Based Antiferromagnetic Perpendicular Tunnel Junction

We report on the tunneling anisotropic magnetoresistance in antiferromagnetic perpendicular tunnel junction consisting of L1_0-MnGa/FeMn/AlO_x/Pt grown on GaAs(001) substrates by molecular-beam epitaxy. The temperature-dependent perpendicular exchange bias effect reveals an exchange coupling between ferromagnetic L1_0-MnGa and antiferromagnetic FeMn. The rotation of antiferromagnetic spins in FeMn can be driven by perpendicularly magnetized L1_0-MnGa due to the exchange-spring effect at the interface and leads to roomtemperature tunneling anisotropic magnetoresistance ratio of 0.86%. We also find that the tunneling anisotropic magnetoresistance strongly depends on temperature and angle. These results have broadened the material selection range for high performance antiferromagnetic spintronic devices.     

Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate

Two-dimensional(2D) ferromagnetic(FM) materials have great potential for applications in next-generation spintronic devices. Since most 2D FM materials come from van der Waals crystals, stabilizing them on a certain substrate without killing the ferromagnetism is still a challenge. Through systematic first-principles calculations, we proposed a new family of 2D FM materials which combines TaX(X = S, Se or Te) monolayer and Al_2O_3(0001) substrate. The TaX monolayers provide magnetic states and the Al_2O_3(0001) substrate stabilizes the former. Interestingly, the Al_2O_3(0001)substrate leads to a metal-to-insulator transition in the Ta X monolayers and induces a band gap up to 303 meV. Our study paves the way to explore promising 2D FM materials for practical applications in spintronics devices.     

垂直各向异性Ho3Fe5O12薄膜的外延生长与其异质结构的自旋输运

垂直磁各向异性稀土-铁-石榴石纳米薄膜在自旋电子学中具有重要应用前景.本文使用溅射方法在(111)取向掺杂钇钪的钆镓石榴石(Gd_0.63Y_2.37Sc₂Ga₃O₁₂,GYSGG)单晶衬底上外延生长了2—100 nm厚的钬铁石榴石(Ho₃Fe₅O₁₂,HoIG)薄膜,并进一步在HoIG上沉积了3 nm Pt薄膜.测量了室温下HoIG的磁各向异性和HoIG/Pt异质结构的自旋相关输运性质.结果显示,厚度薄至2 nm的HoIG薄膜(小于2个单胞层)在室温仍具有铁磁性,且由于外延应变,2—60 nm厚HoIG薄膜都具有很强的垂直磁各向异性,有效垂直各向异性场最大达350 mT;异质结构样品表现出非常可观的反常霍尔效应和“自旋霍尔/各向异性”磁电阻效应,前者在HoIG厚度小于4 nm时开始缓慢下降,而后者当HoIG厚度小于7 nm时急剧减小,说明相较于反常霍尔效应,磁电阻效应对HoIG的体磁性相对更加敏感;此外,自旋相关热电压随HoIG厚度减薄在整个厚度范围以指数方式下降,说明遵从热激化磁振子运动规律的自旋塞贝克效应是其主要贡献者.本文结果表明HoIG纳米薄膜具有可调控的垂直磁各向异性,厚度大于4 nm的HoIG/Pt异质结构具有高效的自旋界面交换作用,是自旋电子学应用发展的一个重要候选材料.     

Magnetoresistance effect in vertical NiFe/graphene/NiFe junctions

For convenient and efficient verification of the magnetoresistance effect in graphene spintronic devices, vertical magnetic junctions with monolayer graphene sandwiched between two NiFe electrodes are fabricated by a relatively simple way of transferring CVD graphene onto the bottom ferromagnetic stripes. The anisotropic magnetoresistance contribution is excluded by the experimental result of magnetoresistance (MR) ratio dependence on the magnetic field direction. The spin-dependent transport measurement reveals two distinct resistance states switching under an in-plane sweeping magnetic field. A magnetoresistance ratio of about 0.17 % is obtained at room temperature and it shows a typical monotonic downward trend with the bias current increasing. This bias dependence of MR further verifies that the spin transport signal in our device is not from the anisotropic magnetoresistance. Meanwhile, the I—V curve is found to manifest a linear behavior, which demonstrates the Ohmic contacts at the interface and the metallic transport characteristic of vertical graphene junction.     

Crossed Andreev reflection-induced magnetoresistance

We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin valve consists of a thin superconducting film sandwiched between two ferromagnetic layers whose magnetization is allowed to be either parallelly or antiparallelly aligned. For a suitable choice of structure parameters and nearly fully spin-polarized ferromagnets, the magnetoresistance can exceed -80%. Our results are relevant for the design and implementation of spintronic devices exploiting ferromagnet-superconductor structures.     

Magnetic dynamics of two-dimensional itinerant ferromagnet Fe_3GeTe_2

Among the layered two-dimensional ferromagnetic materials(2 D FMs),due to a relatively high T_C,the van der Waals(vdW) Fe_3 GeTe_2(FGT) crystal is of great importance for investigating its distinct magnetic properties.Here,we have carried out static and dynamic magnetization measurements of the FGT crystal with a Curie temperature TC ≈ 204 K.The M-H hysteresis loops with in-plane and out-of-plane orientations show that FGT has a strong perpendicular magnetic anisotropy with the easy axis along its c-axis.Moreover,we have calculated the uniaxial magnetic anisotropy constant(K_1)from the SQUID measurements.The dynamic magnetic properties of FGT have been probed by utilizing the high sensitivity electron-spin-resonance(ESR) spectrometer at cryogenic temperatures.Based on an approximation of single magnetic domain mode,the K_1 and the effective damping constant(α_(eff)) have also been determined from the out-of-plane angular dependence of ferromagnetic resonance(FMR) spectra obtained at the temperature range of 185 K to T_C.We have found large magnetic damping with the effective damping constant α_(eff) ～ 0.58 along with a broad linewidth(ΔH_(pp) 1000 Oe at 9.48 GHz,H ‖ c-axis).Our results provide useful dynamics information for the development of FGT-based spintronic devices.