一个通用的记忆器件模拟器

本文根据惠普忆阻器模型提出了一个新的接地忆阻器模拟等效电路.并以此为基础,采用常规的电子元件构建了一个通用的记忆器件模拟器.该模拟器能在电路拓扑结构不变的情况下,通过改变接入元件的性质能将接地忆阻器分别转化为浮地忆阻器、浮地忆感器和浮地忆容器.由于该模拟器是浮地的,因而可以方便的与其他电子器件实现灵活的连接形式.Pspice仿真实验验证了模拟器的真确性和有效性.     

基于电流反馈运算放大器的忆阻混沌电路设计与仿真

将电流反馈运算放大器和四种基本电路元件电容、电感、电阻、忆阻器巧妙结合,设计出一种新型忆阻混沌电路.分析系统的基本动力学行为,如耗散性、平衡点稳定性、相图、Lyapunov指数和参数影响等.数值仿真结果表明,该电路可产生一类特殊的混沌吸引子,且随系统参数的演变可产生丰富复杂的混沌特性.为了验证系统的正确性,设计了实现该系统的仿真电路,Pspice仿真结果验证了理论分析的正确性.     

基于有源广义忆阻的无感混沌电路研究

采用常见元器件等效实现一个广义忆阻器, 进而制作出一个电路特性可靠的非线性电路, 有助于忆阻混沌电路的非线性现象的实验展示及其所产生的混沌信号的实际工程应用. 基于忆阻二极管桥电路, 构建了一种无接地限制的、易物理实现的一阶有源广义忆阻模拟器; 由该模拟器并联电容后与RC桥式振荡器线性耦合, 实现了一种无电感元件的忆阻混沌电路; 建立了无感忆阻混沌电路的动力学模型, 开展了相应的耗散性、平衡点、稳定性和动力学行为等分析. 结果表明, 无感忆阻混沌电路在相空间中存在分布2个不稳定非零鞍焦的耗散区和包含1个不稳定原点鞍点的非耗散区; 当元件参数改变时, 无感忆阻混沌电路有着共存分岔模式和共存吸引子等非线性行为. 研制了实验电路, 该电路结构简单、易实际制作, 实验测量和数值仿真两者结果一致, 验证了理论分析的有效性.     

忆阻电路的基本性质及其应用

对有边界的忆阻元件与电容、 电感的串、 并联电路分别进行了研究, 分析了电路所具有的特性和频率及元件的电容、 电感对电路的影响, 通过仿真验证了理论结果.根据有边界的忆阻元件及其构成电路的性质研究, 对其潜在的应用进行了预测.     

Dynamic analysis and fractional-order adaptive sliding mode control for a novel fractional-order ferroresonance system

Ferroresonance is a complex nonlinear electrotechnical phenomenon, which can result in thermal and electrical stresses on the electric power system equipments due to the over voltages and over currents it generates. The prediction or determination of ferroresonance depends mainly on the accuracy of the model used. Fractional-order models are more accurate than the integer-order models. In this paper, a fractional-order ferroresonance model is proposed. The influence of the order on the dynamic behaviors of this fractional-order system under different parameters n and F is investigated.Compared with the integral-order ferroresonance system, small change of the order not only affects the dynamic behavior of the system, but also significantly affects the harmonic components of the system. Then the fractional-order ferroresonance system is implemented by nonlinear circuit emulator. Finally, a fractional-order adaptive sliding mode control(FASMC)method is used to eliminate the abnormal operation state of power system. Since the introduction of the fractional-order sliding mode surface and the adaptive factor, the robustness and disturbance rejection of the controlled system are enhanced. Numerical simulation results demonstrate that the proposed FASMC controller works well for suppression of ferroresonance over voltage.     

Design of a memcapacitor emulator based on a memristor

Since Hewlett-Packard?s solid state implementation of a memristive system in 2008, a lot of research has begun to develop applications using this new component. As it is not available as a two terminal device yet, emulating circuits must be developed. Building on our previous work to develop an analog model of a memristor, a memcapacitor emulator is proposed in this Letter. This model can be realized by transforming a memristor emulator to a memcapacitor emulator. The characteristics of a memcapacitor are based on the theory proposed by L.O. Chua. The transformation process is described in detail in this Letter. Simulation and experimental results are given as well.     

含有单相铁芯变压器的铁磁混沌电路的分析及控制

对一个含有单相铁芯变压器的三阶非自治铁磁混沌电路进行了理论研究和计算机仿真分析.研究表明,仅含由磁通链控制的非线性电感器件的三阶非自治电路可以作为一个四阶自治改进系统来分析.数值仿真和电路实验证实了此系统确实存在混沌动力学行为.同时,还提出了一种通过改变线性电容参数控制混沌的方法.     

最简荷控型忆阻器混沌电路的设计及实现

利用惠普荷控型忆阻器、电感、电容和负电导串联设计了一类单回路忆阻器混沌电路.采用常规的动力学分析目的 研究系统的基本动力学特性,如平衡点稳定性分析、李雅普诺夫指数谱和分岔图等.数值仿真表明该系统在一个平衡点的情况下产生一类特殊的单涡卷混沌吸引子,且随系统参数的改变产生丰富复杂的混沌行为.为验证电路的正确性,利用Pspice进行相应电路仿真,仿真结果与理论分析、数值计算基本一致.     

A Simpler Memristor Emulator Based on Varactor Diode

A new memristor(MR) emulator is designed by making use of only three current-feedback operational amplifiers,one varactor diode, one capacitor and five resistors. As compared with other reported MR emulators, only three active devices and ten components in total are required for realizing this MR emulator, and hence this emulator can be regarded as a simpler one for the moment. The results obtained by Multisim simulation and experimental prototypes are given to verify the practicality and feasibility of this MR emulator.     

基于模拟电路的新型忆感器等效模型

本文首先利用光敏电阻阻值的可控性, 建立了磁通控制型忆阻器的等效电路模型. 通过对忆感器和忆阻器间转换关系的分析, 采用模拟电子元器件设计了磁通控制型忆感器的实用等效电路模型, 给出了理论分析并结合Pspice软件进行了仿真验证. 忆感器等效电路模型的韦安关系展现出典型的非线性磁滞回线特性. 最后, 运用实验手段研究了正弦波和三角波两种典型电压信号激励下忆感器与RC串联后电路的动态特征, 证明了本文提出忆感器等效电路模型的有效性. 关键词： 忆阻器 忆感器 磁滞回线特性 Pspice     

Chaotic memristor

We suggest and experimentally demonstrate a chaotic memory resistor (memristor). The core of our approach is to use a resistive system whose equations of motion for its internal state variables are similar to those describing a particle in a multi-well potential. Using a memristor emulator, the chaotic memristor is realized and its chaotic properties are measured. A Poincaré plot showing chaos is presented for a simple nonautonomous circuit involving only a voltage source directly connected in series to a memristor and a standard resistor. We also explore theoretically some details of this system, plotting the attractor and calculating Lyapunov exponents. The multi-well potential used resembles that of many nanoscale memristive devices, suggesting the possibility of chaotic dynamics in other existing memristive systems.     

忆阻元件与RLC以及二极管串并联电路的特性研究

对第四类基本电路元件:忆阻元件与RLC以及二极管串并联电路特性进行了研究,分别建立了两种电路的数学模型,并进行了仿真研究,分析了电路中的电容、电感、电阻等参数对电路特性的影响,得出了相关的结论.     

Sensitivity Analysis of Dual-Window High Power SPST Switch at W-Band Frequencies

This paper discusses the sensitivity analysis of high power, high performance W-band dual-window SPST switch with respect to key design parameters viz. the window capacitance, window inductance and the spacing between the windows. The theoretical analysis presented in this work reveals that the Insertion Loss of the switch depends critically on the window capacitance and window spacing. The performance is not strongly affected over a fairly wide range of window inductance.     

A fully analytic treatment of resonant inductive coupling in the far field

For the application of resonant inductive coupling for wireless power transfer, fabrication of flat spiral coils using ribbon wire allows for analytic expressions of the capacitance and inductance of the coils and therefore the resonant frequency. The expressions can also be used in an approximate way for the analysis of coils constructed from cylindrical wire. Ribbon wire constructed from both standard metals as well as high temperature superconducting material is commercially available, so using these derived expressions as a basis, a fully analytic treatment is presented that allows for design trades to be made for hybrid designs incorporating either technology. The model is then extended to analyze the performance of the technology as applied to inductively coupled communications, which has been demonstrated as having an advantage in circumstances where radiated signals would suffer unacceptable levels of attenuation.     

感性神经元模型及其动力学特性研究

神经元的大小属于介观尺度范围,本文考虑神经元的电感特性,建立了由细胞膜电感、膜电容、钾离子忆阻器和氯离子电阻构成的神经元经典电路模型和介观电路模型.利用经典电路理论和介观电路的量子理论,推导了在外部冲击激励下神经元细胞膜电压响应的表达式.将枪乌贼神经元的电生理参数代入膜电压表达式并计算可知,两种模型下的膜电压均先增大后减小,最后达到零值的静息状态,且其能量主要集中在0—30 Hz的脑电频率范围内.进一步比较发现,介观电路模型下膜电压的峰值及达到峰值所需的时间(达峰时间)均低于经典电路模型下的值,并与枪乌贼轴突受到刺激后的实验结果更接近,说明介观电路模型更能反应神经元受到刺激后的生理特征.基于介观电路模型,随着外部激励强度的增加,膜电压的峰值增加且达峰时间变短.膜电压峰值及达峰时间等参数更易受神经元膜电容的影响.神经元的介观电路模型对于理解神经元受到刺激后的兴奋性,推动受大脑功能启发的量子神经网络的发展等具有重要意义.     

Step-by-step implementation of an amplifier circuit with a graphene field-effect transistor on a printed-circuit board

Power amplifier circuits are implemented with graphene field-effect transistors (FETs), capacitors and inductors, and their gain is improved step-by-step by adjusting the passive components. The transistors are fabricated on a 150-mm wafer using conventional complementary-metal-oxide semiconductor processing along with graphene transferring processes. The completed circuit is implemented on a printed circuit board, which allows for adjustment of the external capacitance and inductance to study the performance of graphene RF FETs. A maximum signal gain of 1.3 dB is achieved at 380 MHz. The device parameters of the transistors are then extracted and the gain is analyzed, and the results show that lowering the source–drain conductance and gate resistance is the key in realizing high performance circuits.     

感性神经元模型及其动力学特性研究

神经元的大小属于介观尺度范围,本文考虑神经元的电感特性,建立了由细胞膜电感、膜电容、钾离子忆阻器和氯离子电阻构成的神经元经典电路模型和介观电路模型.利用经典电路理论和介观电路的量子理论,推导了在外部冲击激励下神经元细胞膜电压响应的表达式.将枪乌贼神经元的电生理参数代入膜电压表达式并计算可知,两种模型下的膜电压均先增大后减小,最后达到零值的静息状态,且其能量主要集中在0—30 Hz的脑电频率范围内.进一步比较发现,介观电路模型下膜电压的峰值及达到峰值所需的时间(达峰时间)均低于经典电路模型下的值,并与枪乌贼轴突受到刺激后的实验结果更接近,说明介观电路模型更能反应神经元受到刺激后的生理特征.基于介观电路模型,随着外部激励强度的增加,膜电压的峰值增加且达峰时间变短.膜电压峰值及达峰时间等参数更易受神经元膜电容的影响.神经元的介观电路模型对于理解神经元受到刺激后的兴奋性,推动受大脑功能启发的量子神经网络的发展等具有重要意义.     

基于单纯形优化法的准方波脉冲形成网络设计

脉冲形成网络常用于大功率固态调制器、微波驱动源以及激光激励源中,以便获取宽平顶的高压长脉冲输出。针对常用的雷利网络,根据宽平顶低纹波的应用需求,开展了优化设计技术研究,提出了基于单纯形优化法的设计算法。主要针对两种情形进行了优化设计及计算:一是电容值相等,通过优化电感值以获取最优的输出波形;二是约定电容值(电容值不完全相等),通过优化计算不同电容排列下的输出结果,寻求最优的电容排列组合及相应的优化电感值。上述优化算法结果表明,在两种情形下均可以获得较优的准方波脉冲输出,可以为准方波脉冲形成网络的工程实现提供一种新的方法。理论计算和电路仿真结果表明,所提出的方法合理可行。     

基于图像识别技术的随机线缆束建模及分布参数统计分析

提出了一种对实际弯曲随机捆扎线束的建模方法,该方法首先基于图像识别技术,使用实际线束在侧视和俯视方向的两幅照片来实现弯曲线束轴心三维坐标的重建,然后再基于随机转移路径方法实现弯曲线束的捆扎随机性。基于该建模方法,通过蒙特卡洛模拟来分析弯曲随机线束分布参数的统计特征,发现自电感、互电感和互电容均值沿线变化趋势与线束高度变化趋势一致,自电容均值则趋势相反;自电容、自电感和互电感的变异系数与线束高度存在负相关特征;捆扎随机性不会改变自电感和自电容均值,但是会降低互电容与互电感均值。