Fabrication and characterization of all-Nb lumped-element Josephson parametric amplifiers

Josephson parametric amplifiers (JPAs) with nearly quantum-limited noise performance have become indispensable devices for the measurements of superconducting quantum information. We have developed an all-Nb lumped-element flux-driven JPA operating in the three-wave mixing mode. Our Nb-based JPA comprises Nb/Al-AlO_x/Nb Josephson junctions, a parallel-plate capacitor with SiO₂ dielectric sandwiched between two Nb layers, a bottom coplanar waveguides layer, and a top Nb wiring layer. We experimentally demonstrate a 20 dB gain over a 190 MHz bandwidth, a mean 1 dB compression of -123 dBm, and near quantum-limited noise performance. This fabrication process can be further used to design impedance transformed parametric amplifiers for multiple-qubit readout.     

Vacuum-gap-based lumped element Josephson parametric amplifier

We propose a lumped element Josephson parametric amplifier with vacuum-gap-based capacitor.The capacitor is made of quasi-floating aluminum pad and on-chip ground.We take a fabrication process compatible with air-bridge technology,which makes our design adaptable for future on-chip integrated quantum computing system.Further engineering the input impedance,we obtain a gain above 20 dB over 162-MHz bandwidth,along with a quasi quantum-limit noise performance.This work should facilitate the development of quantum information processing and integrated superconducting circuit design.     

Fabrication of Josephson parameter amplifier and its applicationin squeezing vacuum fluctuations

Josephson parameter amplifier (JPA) is a microwave signal amplifier device with near-quantum-limit-noise performance. It has important applications in scientific research fields such as quantum computing and dark matter detection. This work reports the fabrication and characterization of broadband JPA devices and their applications in multi-qubit readout and squeezing of vacuum state. We use a process in which transmission lines and electrodes are made of niobium thin film and aluminum Josephson junctions are made by Dolan bridge technique. We believe this process is more convenient than the process we used previously. The whole production process adopts electron beam lithography technology to ensure high structural resolution. The test result shows that the gain value of the manufactured JPA can exceed 15 dB, and the amplification bandwidth is about 400 MHz. The noise temperature is about 400 mK at the working frequency of 6.2 GHz. The devices have been successfully used in experiments involving superconducting multi-qubit quantum processors. Furthermore, the device is applied to squeeze vacuum fluctuations and a squeezing level of 1.635 dB is achieved.     

Fabrication and characterization of ultra-low noise narrow and wide band Josephson parametric amplifiers

We have fabricated two types of lumped-element Josephson parameter amplifiers (JPAs) by using a multilayer micro-fabrication process involving wet etching of Al films. The first type is a narrow band JPA which shows typical gain above 14 dB in a bandwidth around 35 MHz. The second type is a wideband JPA which is coupled to an input 50 Ω transmission line via an impedance transformer that changes the impedance from about 15 Ω on the non-linear resonator side to 50 Ω on the input transmission line side. The wideband JPA could operate in a 200 MHz range with a gain higher than 14 dB. The amplifiers were used for superconducting qubit readout. The results showed that the signal to noise ratio and hence the readout fidelity were improved significantly.     

Amplification effect on SBS and Rayleigh scattering in the backward pumped distributed fiber Raman amplifier

The amplification effect on stimulated Brillouin scattering （SBS） and Rayleigh scattering in the backward pumped G652 fiber Raman amplifier （FRA） is studied. The pump source is a 1427.2-nm fiber Raman laser whose power is tunable between 0 - 1200 mW, and the signal source is a tunable narrow spectral bandwidth （〈 10 MHz） external cavity laser （ECL）. The Rayleigh scattering lines are amplified by the FRA and Stokes SBS lines are amplified by the FRA and the fiber Brillouin amplifier. The total gain of SBS lines is the production of the gain of Raman amplifier and that of Brillouin amplifier. In experiment, the SBS gain is about 42 dB and the saturation gain of 25-km G652 backward FRA is about 25 dB, so the gain of fiber Brillouin amplifier is about 17 dB.     

Ka波段二次谐波回旋速调管放大器的输出特性

 根据谐波回旋速调管放大器的注-波互作用特点,对Ka波段二次谐波三腔回旋速调管放大器的输出腔进行了数值模拟和优化设计,获得了输出腔末端高频波绕射输出孔径和腔体绕射Q值的对应关系。通过PIC粒子模拟,分析了该放大器的频率响应特点等输出特性。结果表明,在35 GHz频率,磁场0.685 T,电子注电压70 kV,电流15 A,横纵速度比为1.45,输入功率1.6 kW时,放大器可以获得超过220 kW的峰值输出功率、约22%的效率和23 dB的增益,3 dB带宽可达到110 MHz。     

S波段四腔相对论速调管放大器的整管性能

在速调管放大器中,中间谐振腔一方面可以提高器件的放大增益,另一方面也容易产生杂频振荡,影响器件正常工作。针对这种杂频振荡的影响,在三腔相对论速调管的基础上发展了四腔相对论速调管。采用PIC粒子模拟软件从整管上对四腔强流相对论速调管放大器的冷腔结构、束波互作用、微波提取等方面进行研究。为得到输出功率和效率的最优值,结构上采用低互作用输入腔,设计了阶梯状结构漂移管,通过对输出腔作用间歇进行优化处理抑制电子回流。模拟结果表明整管微波模拟输出功率达了3.7 GW,效率22%,增益56 dB,1 dB带宽74 MHz,并实现了对杂频振荡的抑制。     

Optimized photoelectric receiver to enhance modulation bandwidth of visible light communication system

In the visible light communication (VLC) system which combines lighting and communication functions, the 3-dB modulation bandwidth is mainly limited by the light-emitting diode (LED) suffered high-frequency response attenuation. An optimized photoelectric receiver was proposed to enhance the 3-dB modulation bandwidth. The frequency response of the photoelectric receiver was derived. Theoretical analysis predicted that a gain peak would appear in the high-frequency response of the photoelectric receiver. The value of the gain and the frequency point of the gain peak can be adjusted by selecting appropriate values of feedback resistor and capacitor. Then, the measurement platform of 3-dB modulation bandwidth for blue-LED VLC system was established. Experimental measurements demonstrated that the photoelectric receiver with proper sets of feedback resistor and capacitor can compensate the high-frequency response attenuation of a normal LED. The 3-dB modulation bandwidth obtains 56% enhancement if the photoelectric receiver was replaced from a commercial one to our optimized design. In order to further expand the 3-dB modulation bandwidth, an equalization circuit consists of two-stage transistor amplifier and an emitter-follower was introduced to suppress the low-frequency response. The 3-dB modulation bandwidth for the VLC system with our optimized photoelectric receiver can be expanded to 241 or 281 MHz, while the circuit was, respectively, arranged as pre-equalization or post-equalization.     

Bandwidth tunable high-Tc superconducting filter

We have developed a high-T_c superconducting band-pass filter, whose center frequency and bandwidth can be tuned independently, with steep attenuation at both lower and higher band edges. This tunable filter is composed of two different types of band-pass filters, one with steep attenuation at the lower band edge and the other with steep attenuation at the higher band edge. Two filters are connected in series and each filter is covered with additional dielectric plates, respectively. The tuning characteristics of the entire filter can be controlled by adjusting the distances between the dielectric plates and the substrate. The entire filter was fabricated monolithically on a 30-mm-wide and 60-mm-long LaAlO₃ substrate. A center frequency of 1.93 GHz, a 3 dB bandwidth of 20 MHz, and an attenuation of 30 dB, 1.0 MHz apart from both band edges, were obtained for the entire filter. Then, a sapphire plate was set above each of two filters, and a center frequency tuning of 10 MHz and a bandwidth tuning of 5 MHz were obtained by adjusting the distances between the substrate and the sapphire plates.     

一种增益平坦的光子晶体拉曼光纤放大器

为解决传统拉曼放大器增益系数低和增益不平坦的问题,采用级联光子晶体光纤的设计方法设计了一种增益平坦的拉曼光纤放大器.采用受激拉曼散射效应的稳态分析理论,分析了光子晶体光纤的拉曼增益谱,建立了拉曼放大器的理论模型.通过解耦合方程,推导了实现增益平坦的约束条件,发现光纤长度和泵浦功率是影响拉曼光纤放大器增益平坦度的两个参数.仿真结果表明,在1 508～1 544 nm的带宽范围内,实现了一个增益高达21 dB,增益平坦度仅为0.14 dB的光子晶体拉曼光纤放大器,可在光纤通信系统应用中发挥重要作用.     

回旋速调管放大器注-波互作用分析

 给出了自洽非线性大信号理论分析方法,在理论分析和高频计算的基础上,建立了回旋速调管放大器注-波互作用计算模型,对其进行数值计算。研究多种参量对放大器输出功率、增益、效率等的影响,通过优化得到了中心频率34 GHz的四腔回旋速调管放大器设计方案。粒子模拟表明：在工作电压65 kV,注电流8 A,电子注横向与纵向速度比为1.5时,输出功率230 kW,带宽230 MHz,电子效率45%,饱和增益33 dB。     

Kα波段TE01模基波回旋速调放大器的设计与实验

在回旋速调放大器自洽非线性大信号理论分析和数值计算的基础上,给出了一支Kα波段TE₀₁模4腔基波回旋速调放大器的设计方案,并完成了样管的研制.同时对样管进行了热测实验,得到了如下实验结果:注电压为70 kV,电流为10 A,输入功率为60 W,磁场强度1.31 T,中心频率34 GHz,峰值功率245 kW,平均功率大于3 kW,增益36.1 dB,效率 35%,3 dB带宽大于280 MHz. 关键词： 回旋速调放大器 注-波互作用 群聚腔 输入腔     

超导量子器件片上皮法电容的制备及测量

片上集成电容是超导量子芯片上的核心器件，其数值一般在百飞法(fF)至皮法(pF)范围.采用常规微纳加工技术在蓝宝石基片上制备了铌-氧化硅-铝(Nb/SiO₂/Al)平行板电容.利用刻蚀工艺制备了平行板电容器的下极板Nb,利用剥离工艺制备平行板电容器的上极板Al和介电层SiO₂.室温下利用锁相放大原理和桥式电路原理测定电容大小，两种方法测定电容值基本一致，表明锁相放大原理测试pF级电容的可靠性.利用该电容与铝基约瑟夫森结组成谐振器，制备了中心频率位于4.35 GHz的约瑟夫森参量放大器.在稀释制冷机中10 mK温度下测定直流偏置谐振器的磁通-频率相位图，拟合数据获得的电容值与室温测定电容值接近，表明在mK、GHz条件下工作的片上集成电容可在室温、kHz条件下测定其数值大小.     

Millimeter-wave gyroklystron amplifier experiment using arelativistic electron beam

A fundamental-mode TE₁₁₁° two-cavity intense-beam gyroklystron amplifier experiment, operating at an accelerating voltage of 1 MV, is reported. The two cavities that were tested are designed to serve as bunching cavities for a high-power output cavity. The two-cavity amplifier has demonstrated a linear gain of 15 dB and an unsaturated output power of ~40 kW, with the intracavity gain and power ~4 dB higher. The frequency of the second cavity has been found to track the frequency of the driven cavity over a range of 300 MHz around a center frequency of 35 GHz. Stable amplifier operation was achieved with beam currents as large as 150 A and a velocity pitch ratio of 0.36. The stable operating range was limited by spurious oscillation in the TE₁₁₂° mode. Theoretical calculations indicate that higher gains might be attainable if this mode could be suppressed     

A High-Gain, 28GHz, 200kW Gyroklystron Amplifier

A design study of a high efficiency/gain gyroklystron amplifier is performed to demonstrate amplified radiation power of 200kW operating at 28GHz. A key design feature of the present gyroklystron amplifier is that the amplifier is designed to be high gain so that it can be saturated by a low power solid state power amplifier. A non-linear, time-dependent, large signal numerical code is used to predict tube performance. Simulations predict that a stable amplifier radiation power of 214kW is produced with a saturated gain of 54dB, an electronic efficiency of 37%, and a frequency bandwidth of 0.3% from a five-cavity gyroklystron amplifier. The amplifier gain is found to be very sensitive to a beam velocity spread.     

Enhanced Raman amplifier flatness with nonlinear broadening over non-standard transmission fibre

Nonlinear CW pump broadening over non-standard transmission fibre is used for the first time to achieve improved gain flatness in a single-pump broadband Raman amplifier. As an illustration of the benefits that can be obtained from this approach, a threefold increase in the bandwidth for 0.1 dB gain variation is reported when the broadened pump is used to produce 9.2 dB on-off gain over 25 km LEAF fibre.     

宽带喇曼/EDFA混合放大器的优化设计

采用改进的模拟退火算法对Raman/EDFA混合放大器的增益谱进行了优化,根据EDFA及Raman的功率传播方程获得了简洁的目标函数.通过对模拟退火算法几个优化环节的改进,使其能够更快速地应用于Raman/EDFA的多峰值问题的优化设计,可以在短时间内获得最优的放大器参量.计算结果表明选择合适的喇曼抽运波长和抽运功率,仅用4个反向抽运的分布式喇曼放大器加C波段的EDFA就可以获得C+L波段约70 nm的带宽、开关增益达到15 dB、最大增益波动小于1.2 dB的平坦增益谱,而且无需额外的平坦滤波器.     

Watt-level Er-doped and Er-Pr-codoped ZBLAN fiber amplifiers at the 2.7-2.8 microm wavelength range

Characteristics of diode-pumped Er-doped and Er-Pr-codoped ZBLAN fiber amplifiers were investigated at the 2.7-2.8 microm wavelength range. An amplified signal of 4.6 W was obtained from the singly Er-doped amplifier for an input signal of 110 mW, corresponding to a net gain of 16.2 dB. An amplified signal of 2.65 W was obtained from the Er-Pr-codoped amplifier for an input signal of 70 mW, corresponding to a net gain of 15.8 dB. It is found that the gain bandwidth of the singly Er-doped amplifier is much narrower than that of the Er-Pr-codoped amplifier. Small gain, no gain, or even a loss for shorter-wavelength signals propagating through the singly Er-doped amplifier should attribute for the large number residual populations in the lower laser level caused by the inefficient depopulation of the energy transfer upconversion processes.     

一种兼具宽带增益改善和宽带、宽角度低雷达散射截面的微带天线

设计并制备了一种兼具高增益和低雷达散射截面(radar cross section, RCS)的微带天线, 通过给原始微带天线加载双屏频率选择表面(frequency selective surface, FSS)覆层, 使其具有宽带的3 dB增益带宽和宽带、宽角度的低RCS特性. 该FSS单元的上层是四个开口处都焊有电阻的金属环结构, 下层是中间和四边都开缝的金属贴片结构. 上层加载的电阻主要用于吸收雷达入射波, 减缩天线RCS; 下层的贴片和天线地板构成Fabry-Perot谐振腔, 提高天线增益. 在5.75–11.37 GHz频带内, S₂₂<-10 dB, S₁₂<-10 dB; 在11.21–11.54 GHz频带内, S₁₁反射系数相位曲线斜率为正, 幅度模值均在0.86以上. 实验结果表明: 与原始天线相比, 在谐振频点11.73 GHz处, 天线增益提高3.4 dB, E, H面的半功率波束宽度分别减小16°和50°; 天线的3 dB增益带宽为10.00–12.40 GHz, 完全覆盖阻抗带宽. 在4.10–11.30 GHz 频带内, 天线法向RCS均有3 dB以上的减缩, 最大减缩23.08 dB; 4.95 GHz处的单站RCS在-20°–20°的角域、双站RCS 在-37°–37°的角域均有3 dB以上的减缩. 实验结果证实了该FSS覆层可用于同时改善天线的辐射和散射 性能. 关键词： 频率选择表面 低雷达散射截面 高增益 宽带     

Optimization of gain flattened C-band EDFA using macro-bending

Optimization of gain flattened C-band erbium-doped fiber amplifier (EDFA) using a macrobending method with an improved gain flatness and bandwidth is demonstrated. The optimization for gain flatness and bandwidth was achieved by varying the bending radius and the length of the doped fiber. In the optimized condition, the gain saturation effect as well as the energy transfer from shorter wavelengths to longer wavelengths resulted in a flattened and broadened gain profile in the C-band region. The amplifier was optimized to a 9 m long erbium-doped fiber (EDF) with erbium ion concentration of 1100 ppm and bending radius of 6.5 mm. The gain variation of the EDFA is obtained within ±1 dB over 25 nm bandwidth of C-band region.