TiO_2薄膜的硼掺杂对TiO_2/p~+-Si异质结器件电致发光的增强

利用磁控溅射在重掺硼硅(p+-Si)衬底上分别沉积TiO2薄膜和掺硼的TiO2(Ti O2∶B)薄膜,并经过氧气氛下600℃热处理,由此形成相应的TiO2/p+-Si和TiO2∶B/p+-Si异质结。与Ti O2/p+-Si异质结器件相比,TiO2∶B/p+-Si异质结器件的电致发光有明显的增强。分析认为:TiO2∶B薄膜经过热处理后,B原子进入TiO2晶格的间隙位,引入了额外的氧空位,而氧空位是TiO2/p+-Si异质结器件电致发光的发光中心,所以上述由B掺杂引起的氧空位浓度的增加是TiO2∶B/p+-Si异质结器件电致发光增强的原因。     

Dissociation of liquid water on defective rutile TiO2 (110) surfaces using ab initio molecular dynamics simulations

In order to obtain a comprehensive understanding of both thermodynamics and kinetics of water dissociation on TiO₂, the reactions between liquid water and perfect and defective rutile TiO₂ (110) surfaces were investigated using ab initio molecular dynamics simulations. The results showed that the free-energy barrier (~4.4 kcal/mol) is too high for a spontaneous dissociation of water on the perfect rutile (110) surface at a low temperature. The most stable oxygen vacancy (V_o1) on the rutile (110) surface cannot promote the dissociation of water, while other unstable oxygen vacancies can significantly enhance the water dissociation rate. This is opposite to the general understanding that V_o1 defects are active sites for water dissociation. Furthermore, we reveal that water dissociation is an exothermic reaction, which demonstrates that the dissociated state of the adsorbed water is thermodynamically favorable for both perfect and defective rutile (110) surfaces. The dissociation adsorption of water can also increase the hydrophilicity of TiO₂.     

Evidence for bicarbonate formation on vacuum annealed TiO2(110) resulting from a precursor-mediated interaction between CO2 and H2O

The reaction of CO₂ and H₂O to form bicarbonate (HCO⁻₃) was examined on the nearly perfect and vacuum annealed surfaces of TiO₂(110) with temperature programmed desorption (TPD), static secondary ion mass spectrometry (SSIMS) and high resolution electron energy loss spectrometry (HREELS). The vacuum annealed TiO₂(110) surface possesses oxygen vacancy sites that are manifested in electronic EELS by a loss feature at 0.75 V. These oxygen vacancy sites bind CO₂ only slightly more strongly (TPD peak at 166 K) than do the five-coordinated Ti⁴⁺ sites (TPD peak at 137 K) typical of the nearly perfect TiO₂(110) surface. Vibrational HREELS indicates that CO₂ is linearly bound at the latter sites with a ν_a(OCO) frequency similar to the gas phase value. In contrast, oxygen vacancies dissociate H₂O to bridging OH groups which recombine to liberate H₂O in TPD at 490 K. No evidence for a reaction between CO₂ and H₂O is detected on the nearly perfect surface. In sequentially dosed experiments on the vacuum annealed surface at 110 K, CO₂ adsorption is blocked by the presence of preadsorbed H₂O, adsorbed CO₂ is displaced by postdosed H₂O, and there is little or no evidence for bicarbonate formation in either case. However, when CO₂ and H₂O are simultaneously dosed, a new CO₂ TPD state is observed at 213 K, and the 166 K state associated with CO₂ at the vacancies is absent. SSIMS was used to tentatively assign the 213 K CO₂ TPD state to a bicarbonate species. The 213 K CO₂ TPD state is not formed if the vacancy sites are filled with OH groups prior to simultaneous CO₂+H₂O exposure. Sticking coefficient measurements suggest that CO₂ adsorption at 110 K is precursor-mediated, as is known to be the case for H₂O adsorption on TiO₂(110). A model explaining the circumstances under which the proposed bicarbonate species is formed involves the surface catalyzed conversion of a precursor-bound H₂O–CO₂ van der Waals complex to carbonic acid, which then reacts at unoccupied oxygen vacancies to generate bicarbonate, but falls apart to CO₂ and H₂O in the absence of these sites. This model is consistent with the conditions under which bicarbonate is formed on powdered TiO₂, and is similar to the mechanism by which water catalyzes carbonic acid formation in aqueous solution.     

(Cu,N)共掺杂TiO2/MoS2异质结的电子和光学性能:杂化泛函HSE06

在密度泛函理论的基础上,系统地研究了Cu/N（共）掺杂的TiO₂/MoS₂异质结体系的几何结构、电子结构和光学性质.计算发现,TiO₂/MoS₂异质结的带隙相比于纯的TiO₂（101）表面明显变小,Cu/N（共）掺杂TiO₂/MoS₂异质结体系的禁带宽度也明显地减小,这导致光子激发能量的降低和光吸收能力的提高.通过计算Cu/N（共）掺杂TiO₂/MoS₂的差分电荷密度,发现光生电子与空穴积累在掺杂后的TiO₂（101）表面和单层MoS₂之间,这表明掺杂杂质体系可以有效地抑制光生电子-空穴对的复合.此外,我们计算了在不同压力下TiO₂/MoS₂异质结的几何、电子和光学性质,发现适当增加压力可以有效提高异质结的光吸收性能.本文结果表明,Cu/N（共）掺杂TiO₂/MoS₂异质结和对TiO₂/MoS₂异质结加压都能有效地提高材料的光学性能.     

Interdiffusion in vacuum-deposited dielectric thin films

The observation of interdiffusion imperfection in vacuum-deposited optical thin films is reported. We measured the diffusion lengths of interdiffusion in dielectric thin films of typical combinations of coating materials (TiO₂–SiO₂ and TiO₂–MgF₂) by analyzing the atomic concentration data along the depth obtained with X-ray photoelectron spectroscopy technique. The resultant diffusion lengths in the deposited layers of dielectric coating materials are not small, hence the effects of interdiffusion should be taken into account in the design of optical filters.     

Transmission of low-energy (< 10 eV) O ions through Au films on TiO2(110)

In an attempt to identify the fundamental processes that influence ion transport through metallic surface layers, we have studied the transmission of O⁺ ions through discontinuous Au films adsorbed on TiO₂(110). A low energy (< 10 eV) O⁺ ion beam is generated via electron stimulated desorption when an Au-dosed TiO₂(110) substrate is bombarded with a focused 250 eV electron beam. Low energy ion scattering data indicate that Au evaporated under ultrahigh vacuum conditions at 300 K forms three-dimensional clusters on TiO₂(110). As the Au coverage increases, the formation of Au clusters on TiO₂(110) blocks a fraction of the TiO₂ surface and the O⁺ yield is attenuated. However, for high coverages (≥30% Au covered substrate) the O⁺ signal decreases at a faster rate than the TiO₂ open area fraction. We attribute the attenuation of the O⁺ yield for high Au coverages mainly to blocking of O⁺ by Au clusters, to deflection of trajectories by the image force between ions and Au clusters, and to charge transfer between desorbing O⁺ and neighboring Au clusters.     

金红石TiO_2中本征缺陷扩散性质的第一性原理计算

基于密度泛函理论的爬坡弹性带方法,对金红石相二氧化钛晶体中钛间隙、钛空位、氧间隙、氧空位4种本征缺陷的扩散特征进行了研究.对比4种本征缺陷在晶格内部沿不同扩散路径的过渡态势垒后发现,缺陷扩散过程呈现出明显的各向异性.其中,钛间隙和氧间隙沿[001]方向具有最小的扩散势垒路径,激活能分别为0.505 eV和0.859 eV;氧空位和钛空位的势垒最小的扩散路径分别沿[110]方向和[111]方向,激活能分别为0.735 eV和2.375 eV.     

Cu掺杂SnO_2/TiO_2复合薄膜的制备及性能研究

制备Cu掺杂的纳米Sn O2/Ti O2溶胶,采用旋涂法在载玻片上镀膜,经干燥、煅烧制得Cu掺杂的Sn O2/Ti O2薄膜,通过对比实验探讨掺杂比例、条件、复合形式等对结构和性能的影响。采用XRD、SEM、EDS、UVVis等测试手段对样品进行表征,并以甲基橙为探针考察了其光催化降解性能。XRD测试结果显示薄膜的晶型为锐钛矿型,结晶度较高。SEM谱图显示薄膜表面无明显开裂,粒子分布均匀,粒径约为20 nm。EDS测试结果表明薄膜材料中含有Cu元素,谱形一致。UV-Vis吸收光谱表明Cu掺杂以及Sn O2/Ti O2的复合使得在近紫外区的光吸收比纯Ti O2明显增强。光催化实验表明Cu掺杂后使得Sn O2/Ti O2复合薄膜对甲基橙的光催化降解效率进一步提高,Sn O2/Ti O2复合薄膜的光催化活性在10%Cu掺杂时达到最高。     

Surface and interface characteristics of TiO2–muscovite nanocomposites

The morphology and chemical characteristics of the surface and the interface of TiO₂–muscovite nanocomposites were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Our results clearly showed that TiO₂ grains formed on the TiO₂ thin film surface, whereas the presence of TiO₂ grains on the interface between TiO₂ thin films and the muscovite substrates was not obvious. While euhedral rutile grains were found in samples doped with Zn ions, none were found in samples doped with Sn ions. The XPS results showed that cations present in the muscovite substrates diffused into the TiO₂ thin films. Etching measurements revealed that diffusion abilities of cation impurities varied: Si and Al diffused more easily than K. The observed differences in chemical composition and oxidation of the elements, especially on the surface and the subsurface, may influence the different crystallization behaviors of elements in TiO₂ thin films and the different active degree of elements diffusing from muscovite substrates.     

基于Au/TiO_2/FTO结构忆阻器的开关特性与机理研究

采用简单的一步水热法在FTO导电玻璃上外延生长了锐钛矿TiO_2纳米线,制备了具有Au/TiO_2/FTO器件结构的锐钛矿TiO_2纳米线忆阻器,系统研究了器件的阻变开关特性和开关机理.结果表明,Au/TiO_2/FTO忆阻器具有非易失的双极性阻变开关特性.同时,在103s的时间内,器件在0.1 V的电阻开关比始终保持在20以上,表明器件具有良好的非易失性.此外,器件在低阻态时遵循欧姆导电特性,而在高阻态时则满足陷阱控制的空间电荷限制电流传导机制,同时提出了基于氧空位导电细丝形成与断开机制的阻变开关模型.研究结果表明Au/TiO_2/FTO忆阻器将是一种很有发展潜力的下一代非易失性存储器.     

Ce和O空位共掺杂TiO_2的电子结构与光学性质

采用基于密度泛函理论加U的计算方法,研究了Ce和O空位单(共)掺杂锐钛矿相TiO_2的电子结构和光吸收性质.计算结果表明,Ce和O空位共掺杂TiO_2的带隙中出现了杂质能级,且带隙窄化为2.67 eV,明显比纯TiO_2和Ce,O空位单掺杂TiO_2的要小,因而可提高TiO_2对可见光的响应能力,使TiO_2的光吸收范围增加.光吸收谱显示,掺杂后TiO_2的光吸收边发生了显著红移;在400.0—677.1 nm的可见光区,共掺杂体系的光吸收强度显著高于纯TiO_2和Ce单掺杂TiO_2,而略低于O空位单掺杂TiO_2.此外,Ce掺杂TiO_2中引入O空位后,TiO_2的导带边从-0.27 eV变化为-0.32 eV,这表明TiO_2的导带边的还原能力得到了加强.计算结果为Ce和O空位共掺杂TiO_2在可见光光解水方面的进一步研究提供了有力的理论依据.     

High pressure structural phase transitions of TiO_2 nanomaterials

Recently, the high pressure study on the TiO_2 nanomaterials has attracted considerable attention due to the typical crystal structure and the fascinating properties of TiO_2 with nanoscale sizes. In this paper, we briefly review the recent progress in the high pressure phase transitions of TiO_2 nanomaterials. We discuss the size effects and morphology effects on the high pressure phase transitions of TiO_2 nanomaterials with different particle sizes, morphologies, and microstructures. Several typical pressure-induced structural phase transitions in TiO_2 nanomaterials are presented, including size-dependent phase transition selectivity in nanoparticles, morphology-tuned phase transition in nanowires, nanosheets,and nanoporous materials, and pressure-induced amorphization(PIA) and polyamorphism in ultrafine nanoparticles and TiO_2-B nanoribbons. Various TiO_2 nanostructural materials with high pressure structures are prepared successfully by high pressure treatment of the corresponding crystal nanomaterials, such as amorphous TiO_2 nanoribbons, α-PbO_2-type TiO_2 nanowires, nanosheets, and nanoporous materials. These studies suggest that the high pressure phase transitions of TiO_2 nanomaterials depend on the nanosize, morphology, interface energy, and microstructure. The diversity of high pressure behaviors of TiO_2 nanomaterials provides a new insight into the properties of nanomaterials, and paves a way for preparing new nanomaterials with novel high pressure structures and properties for various applications.     

十二烷二酸修饰TiO_2电子传输层改善钙钛矿太阳电池的电流特性

在经典的平面异质结钙钛矿太阳电池中,TiO_2致密层的电子传输性能一直是获得优异光伏性能的决定性因素之一.相较于spriro-OMe TAD等常见的空穴传输材料优异的空穴传输能力,作为电子传输材料的TiO_2的导电性较弱,无法形成良好的电荷匹配.为了解决这个问题,我们使用自组装的十二烷二酸(DDDA)单分子层来修饰TiO_2致密层的表面,TiO_2致密层的导电性能得到大幅提升,并且其能带结构得到优化,促进了电子传输,降低了电子积聚和载流子复合,使得电池的短路电流密度(JSC)从修饰前的20.34 mA·cm~(-2)提升至修饰后的23.28 mA·cm~(-2),进而使得电池在标准测量条件下的光电能量转换效率从14.17%提升至15.92%.同时还发现,通过DDDA修饰TiO_2致密层,所制备的器件的光稳定性显著提升,器件未封装暴露在AM 1.5光强100 mW·cm~(-2)的模拟太阳光下超过720 min,保持初始效率的71%以上且趋于稳定.     

Single crystal RuO2/Ti and RuO2/TiO2 interface: LEED, Auger and XPS study

The interactions at the evolving RuO₂/titanium interface have been studied by LEED, AES and XPS. Titanium films of up to 5 monolayers were evaporated onto well ordered and ion sputtered ruthenium dioxide crystal surfaces of (110) and (100) orientation. Stabilization of the surface oxygen content under thermal treatment in UHV (up to 600°C) with increasing titanium coverage was established. After extended (up to 4 h) annealing in O₂ at 600°C an epitaxial ordering of TiO₂ on RuO₂(110) was observed. The (1 × 1) LEED patterns from the epitaxial layer exhibit a reduced background level when compared to the RuO₂ substrate itself. These findings are correlated with the XPS data and are interpreted in connection with the disappearance of the defect RuO₂ phase in the surface layer of the RuO₂. The appearance of the (1 × 2) surface reconstruction at the RuO₂(100)/Ti interface is discussed in the context of maximum cation coordination by oxygen atoms.     

NiTi(110)表面氧原子吸附的第一性原理研究

为了研究给定的NiTi的表面氧化过程,在保持体系中Ni和Ti原子总数相等的条件下,构建了一系列Ti原子在表面反位的c(2×2)-NiTi(110)缺陷体系,并利用第一性原理计算研究了氧原子在各种NiTi(110)反位缺陷体系的吸附行为以及表面形成能.计算结果表明:吸附氧原子的稳定性与表面Ti原子的富集程度有很大的关联性,体系表面Ti原子富集程度越高,氧原子吸附的稳定性越高;当覆盖度较高时,由于氧原子的吸附,可使Ni和Ti原子在表面出现反位.在富氧条件(μ_o≥-9.35 eV)下,氧原子在表面第1层中的全部Ni原子与第3层全部Ti换位的反位缺陷体系上的吸附最稳定,此时随着氧原子的吸附,表面上的Ti原子升高,导致向上膨胀生长形成二氧化钛层,且在其下方形成富Ni层,由此可合理地解释实验上发现NiTi合金氧化形成二氧化钛层的可能原因.     

H_2气氛退火处理对Nb掺杂TiO_2薄膜光电性能的影响

采用电子束沉积方法,以钛酸锶(SrTiO3)为衬底制备铌(Nb)掺杂TiO2薄膜并研究后续H2气氛退火处理对其薄膜样品光电性能的影响.结果发现H2气氛热退火处理能有效改善Nb掺杂TiO2薄膜的导电率,最佳电阻率达到5.46×10-3Ω·cm,在可见光范围内的透光率为60%—80%.导电性能的改善与H2气氛退火处理后多晶薄膜的晶粒尺寸变大和大量的氧空位形成及H原子掺杂有关.     

钽掺杂二氧化钛薄膜的光电性能研究

采用脉冲激光沉积法 (PLD), 以石英玻璃为衬底制备了钽掺杂TiO₂薄膜并研究了薄膜样品的光电性质. 沉积氧气分气压从0.3 Pa变化到0.7 Pa时薄膜样品的帯隙变化范围是3.26 eV到3.49 eV. 通过测量电阻率随温度的变化关系确定了薄膜内部的主要导电机理. 在150 K到210 K温度范围内, 热激发导电机理是主要的导电机理; 而在10 K到150 K范围内; 电导率随温度的变化复合Mott的多级变程跳跃模型 (VRH); 在210 K到300 K范围内, 电阻率和exp(b/T)^1/2呈正比关系. 关键词： 2')" href="#">Ta掺杂TiO₂ 脉冲激光沉积法 薄膜 导电机理     

I掺杂金红石TiO$lt;sub$gt;2$lt;/sub$gt;(110)面的第一性原理研究

利用基于密度泛函理论的第一性原理研究了I掺杂金红石TiO₂（110）表面的形成能和电子结构,分析了不同掺杂位置的结构对TiO₂光催化性能的影响. 计算表明,氧化环境下I最容易替代掺杂表面五配位的Ti,而还原环境下最容易替代掺杂表面的桥位氧. I替位Ti或I替位O都能降低禁带宽度,可能使TiO₂吸收带出现红移现象或产生在可见光区的吸收,其中I替位桥位氧的禁带宽度最小. 吸收光谱表明,I掺杂不仅能提高TiO₂可见光响应,同时可增加紫外光的吸收能量,提高其可见光及紫外光下的光催化性能. 关键词： 第一性原理 I掺杂 2(110)')" href="#">金红石相TiO₂(110) 光催化     

球磨处理的TiO2光谱特征及其光催化性能研究

为改变TiO₂的颗粒尺寸和提高其光催化性能,采用高能球磨法处理TiO₂粉末,研究球磨时间对样品微观形貌、晶体结构、拉曼光谱、荧光光谱和光催化性能的影响;分析荧光光谱和光催化性能之间的关系,确定光催化机理为快速判断其光催化性能提供依据。结果表明：随着球磨时间的增加样品颗粒由规则形状变成无规则形状且表面变得粗糙。所有样品均主要为锐钛矿结构,有少量的金红石结构,随着球磨时间的增加金红石结构的(110)衍射峰逐渐增强说明在球磨过程中少量的TiO₂发生了相转变,晶粒尺寸先减小后增加。所有样品均出现锐钛矿型TiO₂拉曼散射峰,而未发现金红石晶型的拉曼散射峰。各个拉曼峰的半高宽随着球磨时间的增加都有所增加,这表明样品的表面质量下降,表面缺陷和氧空位逐渐增加导致。所有样品在470 nm附近均出现荧光峰,且球磨后的样品该荧光峰得到增强,经过球磨后的TiO₂样品在397, 452, 483, 500和536 nm等处出现荧光峰,且球磨4 h后的TiO₂荧光峰强度最强,表明其表...     

锐钛矿相和金红石相Nb:TiO_2电学性质的GGA(+U)法研究

采用基于密度泛函理论第一性原理GGA和GGA+U相结合的方法研究了不同掺杂浓度下锐钛矿相和金红石相Nb:TiO2的晶体结构、电子结构以及稳定性.结果表明:锐钛矿相Nb:TiO2能带结构与简并半导体类似,呈类金属导电机理.金红石相Nb:TiO2呈半导体导电机理.Nb原子比Ti原子电离产生出更多的电子.锐钛矿相Nb:TiO2中Nb原子的电离率比金红石相Nb:TiO2的大.以上结果说明锐钛矿相Nb:TiO2比金红石相Nb:TiO2更适宜用作TCO材料;掺杂浓度对其杂质能级,费米能级和有效质量都有影响.Nb原子掺杂浓度越高,材料电离率呈降低趋势;形成能计算结果显示:在富钛条件下不利于Nb原子的掺杂,而在富氧条件下有利于Nb原子的掺杂.对于金红石相和锐钛矿相Nb:TiO2,不论是在贫氧或富氧条件下,随着Nb原子掺杂浓度的提高,形成能均增大.