Ab-initio study of Li based chalcopyrite compounds LiGaX2 (X= S,Se, Te) in tetragonal symmetry: A class of future materials for optoelectronic applications

Structural, electronic, optical, and thermoelectric aspects of chalcopyrite LiGaX₂ (X = S, Se and Te) compounds have been investigated by density functional theory (DFT) based Wien2k simulator. The optimized ground state parameters are calculated by Wu-Cohen generalized gradient approximation (WC-GGA) and electronic structures, which have been further improved by modified Becke-Johnson (mBJ) potential. Moreover, a comparative study is given among the contribution of three anions (S, Se and Te) in the same symmetry of tetragonal phase. The calculated band gaps of the studied compounds are 3.39, 2.83, and 1.96 eV for LiGaS_2, LiGaSe₂ and LiGaTe₂, respectively. The observed band gaps consider the studied compounds are potential materials for optoelectronic devices. In addition, the optical response of the studied materials has been analyzed in terms of dielectric constants, refraction, absorption, reflectivity and energy loss function. We have also reported the thermoelectric properties like Seebeck coefficient, thermal and electrical conductivities, and figure of merit as function of temperatures by using BoltzTrap code. The high thermal efficiency and absorption spectra in the visible region make the studied materials multifunctional for energy applications.     

Electronic properties and topological phases of ThXY(X= Pb,Au, Pt and Y= Sb,Bi, Sn) compounds

The electronic properties and topological phases of Th XY(X = Pb, Au, Pt, Pd and Y = Sb, Bi, Sn) compounds in the presence of spin–orbit coupling, using density functional theory are investigated. The Th Pt Sn compound is stable in the ferromagnetic phase and the other Th XY compounds are stable in nonmagnetic phases. Band structures of these compounds in topological phases(insulator or metal) and normal phases within generalized gradient approximation(GGA) and Engel–Vosko generalized gradient approximation(GGA EV) are compared. The Th Pt Sn, Th Pt Bi, Th Pt Sb, Th Pd Bi, and Th Au Bi compounds have topological phases and the other Th XY compounds have normal phases. Band inversion strengths and topological phases of these compounds at different pressure are studied. It is seen that the band inversion strengths of these compounds are sensitive to pressure and for each compound a second-order polynomial fitted on the band inversion strengths–pressure curves.     

Study of magnetic and optical properties of Zn_(1-x)TM_xTe(TM = Mn,Fe,Co,Ni) diluted magnetic semiconductors:First principle approach

We present structural,magnetic and optical characteristics of Zn_(1-x)TM_xTe(TM = Mn,Fe,Co,Ni and x = 6.25%),calculated through Wien2 k code,by using full potential linearized augmented plane wave(FP-LAPW) technique.The optimization of the crystal structures have been done to compare the ferromagnetic(FM) and antiferromagnetic(AFM) ground state energies,to elucidate the ferromagnetic phase stability,which further has been verified through the formation and cohesive energies.Moreover,the estimated Curie temperatures T_c have demonstrated above room temperature ferromagnetism(RTFM) in Zn_(1-x)TM_xTe(TM =Mn,Fe,Co,Ni and x= 6.25%).The calculated electronic properties have depicted that Mn- and Co-doped ZnTe behave as ferromagnetic semiconductors,while half-metallic ferromagnetic behaviors are observed in Fe- and Ni-doped ZnTe.The presence of ferromagnetism is also demonstrated to be due to both the p-d and s-d hybridizations between the host lattice cations and TM impurities.The calculated band gaps and static real dielectric constants have been observed to vary according to Penn's model.The evaluated band gaps lie in near visible and ultraviolet regions,which make these materials suitable for various important device applications in optoelectronic and spintronic.     

Theoretical optoelectronic analysis of intermediate-band photovoltaic material based on ZnY1-xOx （Y = S,Se, Te） semiconductors by first-principles calculations

The structural, energetic, and electronic properties of lattice highly mismatched ZnY1-xOx （Y = S, Se, Te） ternary alloys with dilute O concentrations are calculated from first principles within the density functional theory. We demonstrate the formation of an isolated intermediate electronic band structure through diluted O-substitute in zinc-blende ZnY （Y = S, Se, Te） at octahedral sites in a semiconductor by the calculations of density of states （DOS）, leading to a significant absorption below the band gap of the parent semiconductor and an enhancement of the optical absorption in the whole energy range of the solar spectrum. It is found that the intermediate band states should be described as a result of the coupling between impurity O 2p states with the conduction band states. Moreover, the intermediate bands （IBs） in ZnTeO show high stabilization with the change of O concentration resulting from the largest electronegativity difference between O and Te compared with in the other ZnSO and ZnSeO.     

Structural,electronic, and optical properties of ZnO_(1-x)Se_x alloys using first-principles calculations

The structural, electronic, and optical properties of binary ZnO, ZnSe compounds, and their ternary ZnO 1-x Se x alloys are computed using the accurate full potential linearized augmented plane wave plus local orbital (FP-LAPW + lo) method in the rocksalt (B1) and zincblende (B3) crystallographic phases. The electronic band structures, fundamental energy band gaps, and densities of states for ZnO 1-x Se x are evaluated in the range 0 ≤ x ≤ 1 using Wu-Cohen (WC) generalized gradient approximation (GGA) for the exchange-correlation potential. Our calculated results of lattice parameters and bulk modulus reveal a nonlinear variation for pseudo-binary and their ternary alloys in both phases and show a considerable deviation from Vegard's law. It is observed that the predicted lattice parameter and bulk modulus are in good agreement with the available experimental and theoretical data. We establish that the composition dependence of band gap is semi-metallic in B1 phase, while a direct band gap is observed in B3 phase. The calculated density of states is described by taking into account the contribution of Zn 3d, O2p, and Se 4s, and the optical properties are studied in terms of dielectric functions, refractive index, reflectivity, and energy loss function for the B3 phase and are compared with the available experimental data.     

半导体材料AAl2C4(A=Zn, Cd, Hg; C=S, Se)的电子结构和光学性质

采用基于密度泛函理论的第一性原理方法, 对具有缺陷型黄铜矿结构的半导体材料A^ⅡAl₂C₄^Ⅵ(A=Zn, Cd, Hg; C =S, Se)的构型和电子结构进行研究, 并系统考察了各晶体的光学性质. 对于线性光学性质, 五种晶体在红外区和部分可见光区具有良好的透光性能, 其中HgAl₂S₄和HgAl₂Se₄晶体具有适中的双折射率. 在非线性光学性质方面, 该类晶体倍频效应较强, 理论预测得到的二阶静态倍频系数均较大(>20 pm/V). 体系的倍频效应主要来源于价带顶附近以S/Se 价p轨道为主要成分的能带向含有较多Al/Hg 价p成分的空带之间的跃迁. 通过与已商业化的AgGaC₂晶体光学性质的对比, 结果表明HgAl₂S₄和HgAl₂Se₄是一类性能优良的红外非线性光学晶体材料.     

Eu_mSi_n(m=1～2,n=1～8)团簇结构和性质的密度泛函理论研究

在密度泛函理论的框架下,采用广义梯度近似（GGA）研究了Eu₂Si_n（n=1～7）团簇的基态几何结构,系统计算了平均结合能E_b、二阶能量差分△₂E、最高占据轨道（HOMO）与最低未占据轨道（LUMO）之间的能隙,并与已有的EuSi_n（n=2～8）团簇相关数据作对比分析.研究表明:单Eu原子比双Eu原子掺杂的Si团簇具有更高的稳定性,EuSi₃、EuSi₆、Eu₂Si₄团簇较相应邻近团簇结构稳定;Eu_mSi_n（m=1～2,n=l～8）团簇的能隙随着团簇总原子数的增加呈现振荡变化,态密度分析得到能隙振荡变化的原因是S原子的s轨道与Eu原子的p轨道发生了杂化.     

Sc12X团簇(X=B,C,N,Al,Si,P)的电子结构和稳定性

基于第一性原理,在密度泛函理论框架下,用广义梯度近似(GGA)研究二十面体Sc12X(X=B、C、N、Al、Si、P)中性和荷电团簇的电子结构和稳定性,系统计算了它们的基态束缚能(BE)、原子间平衡间距、最高占据轨道(HOMO)与最低占据轨道(LUMO)之间的能隙、局域电荷以及HOMO电子构型.研究表明,用C、Si原子或荷电后的B、N、Al、P离子分别替代团簇Sc13中心原子可以使其成为稳定的结构.Sc12X团簇束缚能改变的原因在于掺杂改变了中心原子或离子与表面原子的轨道杂化.     

Cu-X(X=B, Al, Ga, In)共掺杂对ZnS可见光吸收的影响

ZnS能够用于光解水制氢,但是由于ZnS带隙较宽在一定程度上制约了可见光的吸收。为了减小闪锌矿ZnS的带隙宽度,增加对可见光的吸收,采用密度泛函理论研究了Cu-X(X=B, Al, Ga, In)共掺杂对ZnS电子结构和可见光吸收的影响。计算结果表明Cu-X(X=B, Al, Ga, In)共掺杂ZnS的结合能都是负值,都属于稳定结构;掺杂使得闪锌矿ZnS的带隙宽度由2.9eV分别减小到2.68eV、2.41 eV、2.18 eV、1.82 eV,导致了吸收谱和光导产生红移,有利于可见光的吸收;掺杂后导带底向低能级方向移动,同时在禁带中产生p-d杂化能级,导致了带隙宽度减小,有利于可见光的吸收和阻止光生载流子的复合;最后掺杂ZnS的带边位置满足水解制氢的条件,可用于制造光催化剂。综上所述Cu-X(X=B, Al, Ga, In)共掺杂ZnS有利于可见光的吸收。     

First-principles calculations of structural,electronic, and thermodynamic properties of ZnO_(1-x)S_x alloys

In this study the pseudo-potential method is used to investigate the structural, electronic, and thermodynamic proper- ties of ZnOl_xSx semiconductor materials. The results show that the electronic properties are found to be improved when calculated by using LDA ~ U functional as compared with local density approximation （LDA）. At various concentrations the ground-state properties are determined for bulk materials ZnO, ZnS, and their tertiary alloys in cubic zinc-blende phase. From the results, a minor difference is observed between the lattice parameters from Vegard＇s law and other calculated results, which may be due to the large mismatch between lattice parameters of binary compounds ZnO and ZnS. A small deviation in the bulk modulus from linear concentration dependence is also observed for each of these alloys. The ther- modynamic properties, including the phonon contribution to Helmholtz free energy △F, phonon contribution to internal energy △E, and specific iheat at constant-volume Cv, are calculated within quasi-harmonic approximation based on the calculated phonon dispersion relations.     

Theoretical calculations of structural,electronic, and elastic properties of CdSe_(1-x)Te_x:A first principles study

The plane wave pseudo-potential method was used to investigate the structural, electronic, and elastic properties of Cd Se_(1-x)Te_x in the zinc blende phase. It is observed that the electronic properties are improved considerably by using LDA + U as compared to the LDA approach. The calculated lattice constants and bulk moduli are also comparable to the experimental results. The cohesive energies for pure Cd Se and Cd Te binary and their mixed alloys are calculated. The second-order elastic constants are also calculated by the Lagrangian theory of elasticity. The elastic properties show that the studied material has a ductile nature.     

V_nB_(8(n+1))~-(n=1-3)团簇的几何结构、电子和光谱特性

基于密度泛函理论和卡里普索结构预测方法,系统研究了V_nB_(8(n+1))~-(n=1-3)团簇的几何结构、电子和光谱特性.首先,利用卡里普索结构预测方法确定了VB_(16)~-的基态结构为高对称性的C_(2v)点群对称结构.在此基态结构基础上,通过堆积的方式优化得到了V_2B_(24)~-和V_3B_(32)~-团簇的基态结构.结果显示,V_2B_(24)~-和V_3B~(32)~-团簇分别拥有高对称性的C_(4h)和D_(8d)点群对称结构.基于上述基态结构,系统分析了不同尺寸团簇的自然布局分布和自然电子组态、Mayer键级和电子局域函数.最后,讨论了不同团簇的红外、拉曼光谱等光谱特性,为过渡金属钒掺杂硼基纳米材料的研究提供理论参考.     

First-principles calculations for titanium monoxide clusters TinO （n=1-9）

Based on the density-functional theory, this paper studies the geometric and magnetic properties of TinO （n=1-9） clusters. The resulting geometries show that the oxygen atom remains on the surface of clusters and does not change the geometry of Tin significantly. The binding energy, second-order energy differences with the size of clusters show that Ti7O cluster is endowed with special stability. The stability of TinO clusters is validated by the recent time-of-flight mass spectra. The total magnetic moments for TinO clusters with n=1-4, 8-9 are constant with 2 and drop to zero at n=5-7. The local magnetic moment and charge partition of each atom, and the density of states are discussed. The magnetic moment of the TinO is clearly dominated by the localized 3d electrons of Ti atoms while the oxygen atom contributes a very small amount of spin in TinO clusters.     

First-principles calculations of structural and electronic properties of Tl_xGa_(1-x)As alloys

The zincblende ternary alloys Tl_xGa_(1-x) As(0 x 1) are studied by numerical analysis based on the plane wave pseudopotential method within the density functional theory and the local density approximation. To model the alloys,16-atom supercells with the 2 × 2 × 2 dimensions are used and the dependency of the lattice parameter, bulk modulus,electronic structure, energy band gap, and optical bowing on the concentration x are analyzed. The results indicate that the ternary Tl_xGa_(1-x) As alloys have an average band gap bowing parameter of 4.48 eV for semiconductor alloys and 2.412 eV for semimetals. It is found that the band gap bowing strongly depends on composition and alloying a small Tl content with GaAs produces important modifications in the band structures of the alloys.     

Structural, electronic and magnetic properties of Mn, Co, Ni in Gen for (n=1-13)

The structural, electronic and magnetic properties of TMGe_n (TM=Mn, Co, Ni; n=1-13) have been investigated using spin polarized density functional theory. The transition metal (TM) atom prefers to occupy surface positions for n<9 and endohedral positions for n≥9. The critical size of the cluster to form endohedral complexes is at n=9, 10 and 11 for Mn, Co and Ni respectively. The binding energy of TMGe_n clusters increases with increase in cluster size. The Ni doped Ge_n clusters have shown higher stability as compared to Mn and Co doped Ge_n clusters. The HOMO-LUMO gap for spin up and down electronic states of Ge_n clusters is found to change significantly on TM doping. The magnetic moment in TMGe_n is introduced due to the presence of TM. The magnetic moment is mainly localized at the TM site and neighbouring Ge atoms. The magnetic moment is quenched in NiGe_n clusters for all n except for n=2, 4 and 8.     

(Nb,N)共掺杂锐钛矿电子结构和光学性质的第一性原理研究

二氧化钛（TiO₂）作为一种性能优良的光催化剂已经受到越来越多的关注.本研究采用密度泛函理论的第一性原理和广义梯度近似+U方法,对锐钛矿结构TiO₂晶体三种可能的（Nb,N）共掺杂TiO₂的几何结构、形成能、能带结构、电子密度和光吸收系数进行了研究,并与单掺杂（Nb/N）体系进行了对比.对掺杂后体系的几何结构进行的计算表明杂质原子掺入后晶格发生了不同程度的畸变.此外,（Nb,N）共掺杂体系与纯TiO₂相比,其禁带宽度和吸收边较小.同时,与N掺杂TiO₂相比,N的2p态在共掺杂情形下变为完全占据,从而减少了电子空穴对的复合.而且共掺杂体系的形成能比N单掺杂体系低,因而更加稳定.因此,（Nb,N）共掺杂可以很好地提升锐钛矿型TiO₂在可见光波段的光催化性能.     

Thermoelectric properties of stannite-phase CuZn2AS4 (CZAS; A=Al,Ga and In) nanocrystals for solar energy conversion applications

The current study aimed to comprehensively investigate structural, electronic, optical and transport properties of quaternary semiconductor CuZn₂AS₄ (CZAS; A=Al, Ga and In) nanocrystals (NCs). Based on energy considerations, the stannite structure (I-42m; No. 121) is found to be more stable than the kesterite (I-4; No.82) and wurtzite (P6₃mc; No.186) type structures. By means of hybrid functional calculations, these nanocrystals have direct band gap of 0.81–1.71 eV with a high absorption coefficient of >10⁴ cm^?1, which are well-suited for use in solar energy-conversion applications. Some of the latest advances in applications of these nanocrystals in thermoelectric applications are also highlighted in the current study. It is observed that transport coefficients of these materials are found to be nearly direction independent and isotropic. All three samples are p-type conductors at room temperature. Especially, the Seebeck coefficient of CuZn₂AlS₄ is even larger than that of CuZn₂GaS₄ and CuZn₂InS₄ under the studied carrier concentration and temperature region. The maximum figure of merit (ZT) reaches 0.982 (0.977), 0.984 (0.974) and 0.53 (0.955) for p-type (n-type) CuZn₂AlS₄, CuZn₂GaS₄, and CuZn₂InS₄, respectively, at 300 K. The high Seebeck coefficients, high figure of merit and low thermal conductivities make these systems good candidates for high-efficiency thermoelectric conversion applications.     

Nb-X(X=Y,Zr)共掺杂SnO_2电子结构的第一性原理研究

本文采用第一性原理方法研究了Nb-X(X=Y,Zr)共掺杂SnO_2能带结构与态密度,探讨了其磁性产生的机理.研究结果表明,Nb-Y共掺杂SnO_2体系自旋向上和自旋向下的能带、态密度完全对称,总磁矩为0μB;Nb-Zr共掺杂的SnO_2体系自旋向上和自旋向下的能带与态密度在费米能级处都出现了不对称的情况,出现耦合现象,其总磁矩为0.933μB;分析Nb-Y共掺杂SnO_2的能带结构与态密度得到自旋向上和自旋向下的能带禁带中的4条杂质能级来源于Nb-Y共掺杂SnO_2电子的施主与受主能级;NbZr共掺杂SnO_2体系产生磁性的原因在于Nb和Zr的d轨道的引入.     

Structural,elastic, electronic,andoptical properties of layered TiNX (X = F,Cl, Br,I) compounds: a density functional theory study

ABSTRACT

Titanium nitride halides, TiNX (X = F, Cl, Br, I) in the α-phase (orthorhombic) are exciting quasi two-dimensional (2D) electronic systems exhibiting a fascinating series of electronic ground states. Pristine TiNX are semiconductors with varying energy gaps and possess attractive properties for potential applications in optoelectronics, photovoltaics, and thermoelectrics. Alkali metal intercalated TiNCl becomes superconducting at reasonably high temperature. We have revisited the electronic band structure of TiNX using density functional theory (DFT) based calculations. The atomic orbital resolved partial electronic energy densities of states are calculated together with the total density of states (TDOS). The structural and elastic properties have been investigated in details for the first time. The elastic anisotropy has been explored. The optical properties of TiNX are studied for the first time. The Debye temperatures have been calculated and the related thermal and phonon parameters are discussed. The calculated physical parameters are compared with existing theoretical and experimental results and showed fair agreement. TiNX are found to reflect electromagnetic radiation strongly in the mid ultraviolet region. The elastic properties show high degree of anisotropy. The effect of halogen atoms on various structural, elastic, electronic, and thermal properties in TiNX are also discussed in detail.     

第一性原理计算LiNBe(N=1～12)团簇的基态结构及其电子性质

从第一性原理出发利用密度泛函理论(DFT)计算了LiNBe(N=1-12)团簇的基态结构及其电子性质.计算结果表明:铍掺杂锂团簇LiNBe(N=1-12)的基态结构相当于Be原子取代LiN 1主团簇基态结构中一个Li原子的位置;当团簇尺寸N≥6时,杂质原子Be被束缚在主团簇笼子内;随着团簇尺寸增大,团簇的离解能和二阶能量差分均出现了奇-偶振荡;从结构稳定性上来看,Li6Be是个幻数团簇.