氢化二维过渡金属硫化物的稳定性和电子特性:第一性原理研究

用氢对单层二维过渡金属硫化物(TMDs)进行功能化是调节单层TMDs电子性质的既有效又经济的方法.采用密度泛函理论,对单层TMDs (MX_2 (M=Mo, W; X=S, Se, Te))的稳定性和电子性质进行理论研究,发现在单层MX_2 的层间有一个比其表面更稳定的氢吸附位点.当同阳离子时,随着阴离子原子序数的增加, H原子与MX_2 层的结合越强,氢化单层MX_2 结构越稳定;相反,同阴离子时,随着阳离子原子序数的增加, H原子与MX_2 层的结合越弱.氢原子从MoS_2的表面经层间穿越到另一表面的扩散势垒约为0.9 eV.氢化对单层MX_2 的电子特性也会产生极大的影响,主要表现在氢化实现了MX_2 体系从无磁性到磁性体系的过渡.表面氢化会使MX_2 层的带隙急剧减小,而层间氢化使MX_2 的电子结构从半导体转变为金属能带.     

六角柱形NaErF_(4)和NaErF_(4)@NaYF_(4)核壳微粒制备及多色上转换荧光调控性能EI北大核心CSCD

采用简单的水热法合成了六角柱形NaErF_(4)和NaErF_(4)@NaYF_(4)核壳上转换发光材料,利用扫描电镜(SEM)、X射线粉末衍射(XRD)和荧光光谱(PL)等表征对材料的形貌、结构和上转换发光性能进行了研究。结果表明,纯NaErF_(4)样品为六角柱形,边长和厚度均为1μm左右,样品表面光滑。随着NaYF_(4)壳层的包覆,六角相NaErF_(4)周围出现了大量的立方相NaYF_(4)纳米颗粒,得到了NaErF_(4)@NaYF_(4)核壳结构。荧光光谱表明,通过在六角柱形NaErF_(4)表面包覆NaYF_(4)壳层,可以有效增强上转换发光强度,其中,位于527,543,663 nm处的3个发射峰分别对应于Er^(3+)的^(2)H_(11/2)→^(4)I_(15/2)、^(4)S_(3/2)→^(4)I_(15/2)和^(4)F_(9/2)→^(4)I1_(5/2)能级跃迁。随着壳层中Y∶F比例的增加,立方相NaYF_(4)的晶体衍射峰逐渐增强;同时,对应的NaErF_(4)@NaYF_(4)样品发射光谱中红绿比(R/G)逐渐增大,发光颜色也从绿色、经黄绿色逐渐向黄色过渡,实现了多色发光。     

Deposition of lead iodide films on Rh(1 0 0) electrodes from colloidal solutions––the effect of an iodine adlayer

The growth of PbI₂ precipitates on single crystal substrates from colloidal solutions has been investigated with in air scanning tunneling microscopy and synchrotron-based X-ray photoelectron spectroscopy. The PbI₂ growth on Rh(1 0 0) results in nano-clusters with lateral dimensions between 30 and 60 Å, consistent with earlier reports. However, the growth of PbI₂ on a well-ordered iodinated Rh(1 0 0), denoted as (√2×√2)R45°-I, leads to atomically smooth PbI₂ films having a hexagonal symmetry with lattice constant identical to the bulk value of 4.5 Å. The heteroepitaxy is believed to be effected by the atomic iodine monolayer that helps to accommodate large lattice mismatch between PbI₂ and Rh surface with short-range van der Waals interaction.     

Interfacial properties of 2D WS2 on SiO2 substrate from X-ray photoelectron spectroscopy and first-principles calculations

Two-dimensional (2D) WS₂ films were deposited on SiO₂ wafers, and the related interfacial properties were investigated by high-resolution X-ray photoelectron spectroscopy (XPS) and first-principles calculations. Using the direct (indirect) method, the valence band offset (VBO) at monolayer WS₂/SiO₂ interface was found to be 3.97 eV (3.86 eV), and the conduction band offset (CBO) was 2.70 eV (2.81 eV). Furthermore, the VBO (CBO) at bulk WS₂/SiO₂ interface is found to be about 0.48 eV (0.33 eV) larger due to the interlayer orbital coupling and splitting of valence and conduction band edges. Therefore, the WS₂/SiO₂ heterostructure has a Type I energy-band alignment. The band offsets obtained experimentally and theoretically are consistent except the narrower theoretical bandgap of SiO₂. The theoretical calculations further reveal a binding energy of 75 meV per S atom and the totally separated partial density of states, indicating a weak interaction and negligible Fermi level pinning effect between WS₂ monolayer and SiO₂ surface. Our combined experimental and theoretical results provide proof of the sufficient VBOs and CBOs and weak interaction in 2D WS₂/SiO₂ heterostructures.     

酞菁铜与MoS_2(0001)范德瓦耳斯异质结研究

利用光电子能谱、原子力显微镜以及低能电子衍射等表面研究手段系统研究了真空沉积生长的酞菁铜薄膜与衬底MoS2(0001)之间的范德瓦耳斯异质结界面电子结构和几何结构.角分辨光电子能谱清楚地再现了MoS2(0001)衬底在Γ点附近的能带结构.低能电子衍射结果表明,CuPc薄膜在MoS2(0001)表面沿着衬底表面[11ˉ20],[1ˉ210]和[ˉ2110]三个晶向有序生长,反映了衬底对CuPc的影响.原子力显微镜结果表明,CuPc在MoS2衬底上遵循层状-岛状生长模式:在低生长厚度下(单层薄膜厚度约为0.3 nm),CuPc分子平面平行于MoS2表面上形成均匀连续的薄膜;在较高的沉积厚度下,CuPc沿衬底晶向形成棒状晶粒,表现出明显的各向异性.光电子能谱显示界面偶极层为0.07 eV,而且能谱在膜厚1.2 nm饱和,揭示了酞菁铜与MoS2(0001)范德瓦耳斯异质结的能级结构.     

Cu对用于高速相变存储器的Sb2Te薄膜的结构及相变的影响研究

采用原位X射线衍射仪、拉曼光谱仪和X射线反射仪分别研究了Cu-Sb₂Te 薄膜的微结构、成键结构和结晶前后的密度变化. Sb₂Te薄膜的结晶温度随着Cu含量的增加而增大. 在10 at.%和14 at.% Cu的Sb₂Te薄膜中, Cu与 Te 成键, 结晶相由六方相的Cu₇Te₄、菱形相的Sb及六方相的Sb₂Te构成. 10 at.% 和14 at.% Cu 的Sb₂Te薄膜在结晶前后的厚度变化分别约为3.2%和 4.0%, 均小于传统的Ge₂Sb₂Te₅ (GST)薄膜. 制备了基于Cu-Sb₂Te薄膜的相变存储单元, 并测试了其器件性能. Cu-Sb₂Te器件均能在10 ns的电脉冲下实现可逆SET-RESET操作. SET和RESET操作电压随着Cu含量的增加而减小. 疲劳测试结果显示, Cu 含量为10 at.%和14 at.%的PCRAM单元的循环操作次数分别达到1.3×10⁴和1.5×10⁵, RESET和SET态的电阻比值约为100. Cu-Sb₂Te可以作为应用于高速相变存储器(PCRAM)的候选材料.     

Electronic structures and topological properties of TeSe2 monolayers

The successfully experimental fabrication of two-dimensional Te monolayer films [Phys. Rev. Lett. 119 106101 (2017)] has promoted the researches on the group-VI monolayer materials. In this work, the electronic structures and topological properties of a group-VI binary compound of TeSe₂ monolayers are studied based on the density functional theory and Wannier function method. Three types of structures, namely, α-TeSe₂, β-TeSe₂, and γ-TeSe₂, are proposed for the TeSe₂ monolayer among which the α-TeSe₂ is found being the most stable. All the three structures are semiconductors with indirect band gaps. Very interestingly, the γ-TeSe₂ monolayer becomes a quantum spin Hall (QSH) insulator with a global nontrivial energy gap of 0.14 eV when a 3.5% compressive strain is applied. The opening of the global band gap is understood by the competition between the decrease of the local band dispersion and the weakening of the interactions between the Se p_x, p_y orbitals and Te p_x, p_y orbitals during the process. Our work realizes topological states in the group-VI monolayers and promotes the potential applications of the materials in spintronics and quantum computations.     

ZnSb掺杂的Ge2Sb2Te5薄膜的相变性能研究

本文采用双靶(ZnSb靶和Ge₂Sb₂Te₅靶)共溅射制备了系列ZnSb掺杂的Ge₂Sb₂Te₅(GST)薄膜. 利用X射线衍射、透射电子显微镜、原位等温/变温电阻测量、X射线光电子能谱等测试研究了薄膜样品的非晶形态、电学及原子成键特性. 利用等温原位电阻测试表明ZnSb掺杂的Ge₂Sb₂Te₅薄膜具有更高的结晶温度. 采用Arrhenius 公式计算发现ZnSb掺杂的Ge₂Sb₂Te₅薄膜的十年数据保持温度均高于传统的Ge₂Sb₂Te₅薄膜的88.9℃. 薄膜在200, 250, 300和350℃ 下退火后的X射线衍射图谱表明ZnSb的掺杂抑制了Ge₂Sb₂Te₅薄膜从fcc态到hex态的转变. 通过对薄膜的光电子能谱和透射电镜分析可知Zn, Sb, Te原子之间键进行重组, 形成Zn–Sb 和Zn–Te 键, 且构成非晶物质存在于晶体周围. 采用相变静态检测仪测试样品的相变行为发现ZnSb掺杂的Ge₂Sb₂Te₅薄膜具有更快的结晶速度. 特别是(ZnSb)_24.3(Ge₂Sb₂Te₅)_75.7薄膜, 其结晶温度达到250℃, 十年数据保持温度达到130.1℃, 并且在70 mW激光脉冲功率下晶化时间仅～64 ns, 远快于传统Ge₂Sb₂Te₅薄膜的晶化时间～280 ns. 以上结果表明(ZnSb)_24.3(Ge₂Sb₂Te₅)_75.7薄膜是一种热稳定性好且结晶速度快的相变存储材料.     

Adsorption and reactions of CH2I2 on Ru(001) surface

The adsorption and dissociation of CH₂I₂ were studied at 110 K with the aim of generating CH₂ species on the Ru(001) surface. The methods used included X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), temperature programmed desorption (TPD), Auger electron spectroscopy (AES) and work function measurements. Adsorption of CH₂I₂ is characterized by a work function decrease (0.96 eV at monolayer), indicating that adsorbed CH₂I₂ has a positive outward dipole moment. Three adsorption states were distinguished: a multilayer (T_p=200 K), a weakly bonded state (T_p=220 K) and an irreversibly adsorbed state. A new feature is the formation of CH₃I, which desorbs with T_p=160 K. The adsorption of CH₂I₂ at 110 K is dissociative at submonolayer, but molecular at higher coverages. Dissociation of the monolayer to CH₂ and I proceeded at 198–230 K, as indicated by a shift in the I(3d_5/2) binding energy from 620.6 eV to 619.9 eV. A fraction of adsorbed CH₂ is self-hydrogenated into CH₄ (T_p=220 K), and another one is coupled to di-σ-bonded ethylene, which — instead of desorption — is converted to ethylidyne at 220–300 K. Illumination of the adsorbed CH₂I₂ initiated the dissociation of CH₂I₂ monolayer even at 110 K, and affected the reaction pathways of CH₂.     

A multitechnique surface science examination of Sn deposition on Pt(100)

Interfaces prepared by vapor deposition of Sn onto Pt(100) surfaces have been examined using the following techniques: Auger electron and X-ray photoelectron spectroscopy (AES and XPS), low-energy electron diffraction (LEED), and low-energy ion surface scattering (LEISS) with Ne⁺ ions. Tin deposition was conducted at 320 and 600 K, and the surface composition and order was examined as a function of further annealing to 1200 K. The AES uptake plots (signal versus deposition time) indicate that the Sn growth mode can be described by a layer-by-layer process only up to one adayer at 320 K. Some evidence of 3D growth is inferred from LEED and LEISS data for higher Sn coverages. For deposition at 600 K, AES data indicate significant interdiffusion and surface alloy formation. LEED observations (recorded at a substrate temperature of 320 K) show that the characteristic hexagonal Pt(100) reconstruction disappears with Sn exposures of 4.6 × 10¹⁴ atoms cm² (θ_Sn = 0.35 monolayer (ML)). Further Sn deposition results in a c(2 × 2) LEED pattern starting at a coverage of slightly above 0.5 ML. The c(2 × 2) LEED pattern becomes progressively more diffuse with increasing Sn exposure with eventual loss of all LEED features above 2.2 ML. Annealing experiments with various precoverages of Sn on Pt(100) are also described by AES, LEED, and LEISS results. For specific Sn precoverages and annealing conditions, c(2 × 2), p(3√2 × √2)R45°, and a combination of the two LEED patterns are observed. These ordered LEED patterns are suggested to arise from ordered PtSn surface alloys. In addition, the chemisorption of CO and O₂ at the ordered annealed Sn/Pt(100) surfaces was also examined using thermal desorption mass spectroscopy (TDMS), AES, and LEED.     

利用纳米球提高红外波长上转换探测器效率

在红外波长上转换探测器氮化硅(SiN_x)钝化层制作单层六角密排的二氧化硅(SiO_2)纳米球阵列,以提高红外波长上转换探测器的整体效率.采用自组装的方法在器件钝化层上制备了直径分别约为300,450,750和1000 nm的SiO_2纳米球,并与无表面微纳结构器件进行对比测试.结果表明:钝化层附着SiO_2纳米球能有效地提高红外波长上转换器的光提取效率;当SiO_2纳米球直径为750 nm时的光提取效率最优,是无表面微纳结构器件的2.6倍,可实现低成本制作高效率红外波长上转换探测器.     

Modulated spin structures due to the four-spin exchange interaction in some intermetallic compounds

The model consisting of the two-spin exchange interaction and the four-spin one is studied. The systematic change of the magnetic structures among MnS₂, MnSe₂ and MnTe₂ is shown to be well-explained by this model. The three types of magnetic structures of EuSe is also discussed.     

Formation of high quality gallium nitride thin films on Ga-diffused Si(1 1 1) substrate

High quality gallium nitride thin films have been successfully grown on the Ga-diffused Si(1 1 1) substrates through ammoniating Ga₂O₃ thin films deposited by r.f. magnetron sputtering. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscope (AFM) and photoluminescence (PL) were used to characterize the synthesized samples. The analyses reveal that the formed films are high quality polycrystalline hexagonal gallium nitride. The as-formed GaN films show a flat surface topography with RMS roughness varied from 29 to 48 Å. The strong near-band-edge-emission peak around 368 nm was observed at room temperature. This is a novel method to fabricate GaN thin films based on the direct reaction between Ga₂O₃ and NH₃ on the Ga-diffused Si(1 1 1) substrates.     

Two dimensional GeO2/MoSi2N4 van der Waals heterostructures with robust type-II band alignment

Constructing two-dimensional (2D) van der Waals heterostructures (vdWHs) can expand the electronic and optoelectronic applications of 2D semiconductors. However, the work on the 2D vdWHs with robust band alignment is still scarce. Here, we employ a global structure search approach to construct the vdWHs with monolayer MoSi₂N₄ and wide-bandgap GeO₂. The studies show that the GeO₂/MoSi₂N₄ vdWHs have the characteristics of direct structures with the band gap of 0.946 eV and type-II band alignment with GeO₂ and MoSi₂N₄ layers as the conduction band minimum (CBM) and valence band maximum (VBM), respectively. Also, the direct-to-indirect band gap transition can be achieved by applying biaxial strain. In particular, the 2D GeO₂/MoSi₂N₄ vdWHs show a robust type-II band alignment under the effects of biaxial strain, interlayer distance and external electric field. The results provide a route to realize the robust type-II band alignment vdWHs, which is helpful for the implementation of optoelectronic nanodevices with stable characteristics.     

层状二硫化钼研究进展

近年来,层状二硫化钼由于其特殊的类石墨烯结构和独特的物理化学性质已成为国内外研究的热点.本文综述了层状二硫化钼的物理结构、价带结构和光学性质;介绍了制备方法,包括生长制备和剥离制备.生长制备的原料包括四硫代钼酸铵((NH4)_2MoS_4)、钼(Mo)和三氧化钼(MoO_3)等.剥离制备包括微机械剥离、液相超声法、锂离子插层法和电化学锂离子插层法等.归纳了层状二硫化钼在场效应晶体管、传感器和存储方面的应用,展望了层状二硫化钼的研究前景.     

WS_2与WSe_2单层膜中的A激子及其自旋动力学特性研究

单层过渡金属硫化物由于其特有的激子效应以及强自旋-谷耦合性质,在光电子学及谷电子学等方面有着很广阔的应用前景.利用超快时间分辨光谱,本文系统地比较了两类钨基单层硫化物(WS_2和WSe_2)的A-激子动力学和谷自旋弛豫特性.实验结果表明, WS_2单层膜的A-激子弛豫表现为双指数过程,而对于WSe_2,其A-激子衰减表现为三指数过程,且激子的寿命远长于前者. WS_2谷自旋极化弛豫表现为单指数衰减,其寿命约0.35 ps,主要由电子-空穴交换作用所主导.而对于WSe_2,谷自旋弛豫表现出双指数弛豫特性:一个寿命为0.5 ps的快过程和一个寿命为28 ps的慢过程.快过程的弛豫来源于电子-空穴交换作用,而慢过程则由于自旋晶格散射形成暗激子的过程.通过调谐抽运光波长,进一步证实WSe_2较WS_2更容易形成暗激子.     

Yb3+/Er3+共掺(MLaFn)x(M=0,K;n=3,4;x=1,1.5)纳米材料的控制合成及其上转换发光性质

采用水热与溶剂热结合的方法,在乙二醇-正己醇体系中,通过调节KF与RE(RE=La,Yb,Er)的量比、反应温度和反应时间实现了由LaF_3(六角相)到KLaF_4(立方相、六角相)晶型的控制合成。借助透射电子显微镜(TEM)和X射线粉末衍射(XRD)对样品的结构和微观形貌进行表征。结果表明,当KF/RE比例为2. 25时,制备的样品为片状的六角相LaF_3纳米颗粒;当KF/RE比例为3. 00时,得到具有近似球形的立方相KLaF_4纳米颗粒;当KF/RE比例为4. 25时,得到了六角相(KLaF_4)_(1. 5)纳米颗粒。上转换发射光谱显示:所有的样品在近红外光(980 nm)激发下,均有3个明显的发射峰,在522 nm、544 nm处分别对应于Er~(3+)的~4S_(3/2),~2H_(11/2)→~4I_(15/2)能级跃迁,655 nm处属于Er~(3+)的~4F_(9/2)→~4I_(15/2)能级跃迁。     

基于熔融玻璃的预沉积法生长毫米级单晶MoS2及WS2-MoS2异质结

MoS₂是一种具有优异光电性能和奇特物理性质的二维材料,在电子器件领域具有巨大的应用潜力.高效可控生长出大尺寸单晶MoS₂是该材料进入产业应用所必须克服的重大难关,而化学气相沉积技术被认为是工业化生产二维材料的最有效手段.本文介绍了一种利用磁控溅射预沉积钼源至熔融玻璃上,通过快速升温的化学气相沉积技术生长出尺寸达1 mm的单晶MoS₂的方法,并通过引入WO₃粉末生长出了二硫化钼与二硫化钨的横向异质结(WS₂-MoS₂).拉曼和荧光光谱仪测试表明所生长的样品具有较好的晶体质量.利用转移电极技术制备出了背栅器件样品并对其进行了电学测试,在室温常压下开关比可达10~5,迁移率可达4.53 cm~2/(V·s).这种低成本高质量的大尺寸材料生长方法为二维材料电子器件的大规模应用找到了出路.     

基于磁圆二向色谱的单层MoS_2激子能量和线宽温度依赖特性

以二硫化钼(MoS_2)为代表的过渡金属硫属化物属于二维层状材料,样品可以薄至单层.单层MoS_2是一种直接带隙半导体,在纳米逻辑器件、高速光电探测、纳米激光等领域具有广阔的应用前景.在实际应用中,温度是影响半导体材料能带结构和性质的主要因素之一.因此研究单层二维材料能带的温度依赖特性对理解其物理机理以及开展器件应用具有重要的意义.目前,在广泛采用的测量单层MoS_2反射谱的研究中,激子峰往往叠加在一个很强的光谱背底上,难以准确分辨激子的峰位和线宽.基于自行搭建的显微磁圆二向色谱系统,研究了单层MoS_2在65—300 K温度范围内的反射谱和磁圆二向色谱,结果表明磁圆二向色谱在研究单层材料激子能量和线宽方面具有明显的优势.通过分析变温的磁圆二向色谱,得到了不同温度下的A,B激子的跃迁能量和线宽.通过对激子能量和线宽的温度依赖关系进行拟合,进一步讨论了声子散射对激子线宽的影响.     

Eu2O3在η-Al2O3和SiO2上固体-固体表面相互作用的研究

用穆斯堡尔谱和X射线衍射技术研究了Eu₂O₃在η-Al₂O₃和硅胶上的固体表面吸附。 关键词：