A global potential energy surface for H2S+(X 4A′′) and quasi-classical trajectory study of the S+(4S) + H2(X1Σ+g) reaction

A novel global potential energy surface for H₂S⁺(X?⁴A″) based on accurate ab initio calculations is presented. Energies are calculated at the multi-reference configuration interaction level with Davidson correction using aug-cc-pVQZ basis set plus core-polarisation high-exponent d functions. A grid of 4552 points is used for the least-square fitting procedure in the frame of a many-body expansion. The topographical features of the new potential energy surface are here discussed in detail. Such a surface is then employed for dynamic studies of the S(⁴S) + H₂(X?¹Σ⁺_g) →SH⁺(X?³Σ^?) + H(²S) reaction using the quasi-classical trajectory method. State specific trajectories are calculated, for both ground and ro-vibrationally excited initial states of H₂(X?¹Σ⁺_g). Corrections to the zero point energy leakage of the classical calculations are also presented. Calculated reaction cross sections and rate constants are here reported and compared with available literature.     

A new global potential energy surface of the ground state of SiH2+ (X2A1) system and dynamics calculations of the Si+ + H2 (v0 = 2, j0 = 0) → SiH+ + H reaction

A global potential energy surface (PES) of the ground state of SiH$_{2}^{+}$ system is built by using neural network method based on 18223 ab initio points. The topographic properties of PES are presented and compared with previous theoretical and experimental studies. The results indicate that the spectroscopic parameters obtained from the new PES are in good agreement with the experimental data. In order to further verify the validity of the new PES, a test dynamics calculation of the Si$^{+} +$ H$_{2}$ ($v_0 = 2, j_{0} = 0$) $\to $ H $+$ SiH$^{+}$ reaction has been carried out by using the time-dependent wave packet method. The integral cross sections and rate constants are computed for the title reaction. The reasonable dynamical behavior indicates that the newly constructed PES is suitable for relevant dynamics investigations.     

CS2+( 2Πg )的(1+1)光解离动力学研究

在气束条件下,利用483．2nm的激光（3＋1）共振增强多光子电离（REMPI）CS2分子以产生CS2＋离子源,用另一束可调谐激光在424－482nm内,通过对CS2^+(x^2∏g)(1+1)双光子共振解离产生的碎片离子发谱的探测,来获取CS2^+的光解离动力学信息,光解离碎片S^+的激光发谱（PHOFEX）可归属为CS2^+（A^2∏u,3/2(v′=0-4,v′＝v1_(1/2)v2-)←X^2′∏g,3/2(0,0,0))和（A^2∏u,1/2(v=0-4)←X^2∏g,1/2(0,0,0))跃迁,对CS2^+光解离动力学的研究表明,其产生S^+的通道为：（i)CS2吸收一个光子从基态X^2∏g共振激发至A^-2∏u态,（ii)已布居的A^-2∏u态的振动能级和X^2-∏g态的高振动能级产生耦合,（iii)吸收第二个光子从上述耦合的振动能级进一步激发至B^2∑u^+态,再通过B^-2∑u^+态与^4∑^-态间的自旋－轨道相互作用,经由4∑^-排斥态解离产生S^+_CS。     

碰撞诱导振动能量转移K_2[1~1Σ_u~+(v′=2)]+He,H_2→K2[1~1Σ_u~+(v′=1,3)]+He,H_2

在样品池条件下,利用激光诱导荧光方法研究了K2[11Σ+u(v′=2)]+He,H2→K2[11Σ+u(v′=1,3)]+He,H2的碰撞能量转移。池温保持在420 K,He和H2气压在40~250 Pa之间变化。脉冲激光激发K2基态至11Σ+u(v′=2)态,荧光中含有直接和碰撞转移荧光成分,记录直接11Σ+u(v′=2)→11Σ+g(v″=0)荧光发射的时间分辨强度。在发射开始时v′=2能级的布居未受v′=1,3→v′=2碰撞转移的影响,因此光强为一纯指数曲线,从强度的对数值给出的直线斜率得到有效寿命,由Stern-Volmer方程得到v′=2→v″=0的辐射寿命为(36±7)ns,v′=2与He和H2碰撞的总的转移截面分别为(3.0±0.5)×10-16cm2和(6.4±1.2)×10-15cm2。在不同的He和H2气压下,测量v′=1,2,3→v″=0的时间积分荧光强度,结合11Σ+u(v′=1,3)能量辐射率的测量,得到了v′=2→v′=1和v′=2→v′=3的碰撞转移面分别为(1.4±0.5)×10-16cm2,(1.2±0.4)×10-16cm2(对K2+He)和(3.2±1.0)×10-15cm2,(2.6±0.9)×10-15cm2(对K2+H2)。     

Theoretical study of Si+(2PJ)–RG complexes and transport of Si+(2PJ) in RG (RG = He–Ar)

We calculate accurate interatomic potentials for the interaction of a singly charged silicon cation with a rare gas atom of helium, neon or argon. We employ the RCCSD(T) method, and basis sets of quadruple-ζ and quintuple-ζ quality; each point is counterpoise-corrected and extrapolated to the basis set limit. We consider the lowest electronic state of the silicon atomic cation, Si⁺(²P), and calculate the interatomic potentials for the terms that arise from this: ²Π and ²Σ⁺. We additionally calculate the interatomic potentials for the respective spin-orbit levels, and examine the effect on the spectroscopic parameters; we also derive effective ionic radii for C⁺ and Si⁺. Finally, we employ each set of potentials to calculate transport coefficients, and compare these to available data for Si⁺ in He.     

用耦合簇理论及相关一致五重基研究SiH2(X1A1)自由基的解析势能函数

运用单双迭代三重激发耦合簇理论和相关一致五重基对SiH2的基态结构进行了优化,并在优化结构的基础上进行了离解能和振动频率的计算.结果表明:SiH2的基态为C2v结构,平衡核间距RSi-H=0.15163 nm,H-Si-H键的键角α=92.363°,离解能De(HSi-H)=3.2735 eV,频率ν1(a1)=1020.0095 cm -1,ν2(a1)=2074.8742cm-1,ν3(a1)=2076.4762cm-1.这些结果与实验值均较为相符.对H2的基态使用优选出的cc-pV6Z基组、对SiH的基态使用优选出的aug-cc-pV5Z基组进行几何构型与谐振频率的计算并进行单点能扫描,且将扫描结果拟合成了解析的Murrell-Sorbie函数.与实验结果及其他理论计算结果的比较表明,本文关于SiH自由基光谱常数(De,Re,ωe,Be,αe和ωeχe)的计算结果达到了很高的精度.采用多体项展式理论导出了SiH2(C2v,X1A1)自由基的解析势能函数,其等值势能图准确再现了它的离解能和平衡结构特征.同时还给出了SiH2(C2v,X1A1)自由基对称伸缩振动等值势能图中存在的两个对称鞍点,对应于SiH+H→SiH2反应,势垒高度为0.5084 eV.     

SiH4+H→H2+SiH3反应的约化维数计算

对SiH4+ H→H2+SiH3反应体系应用SVRT模型进行了4维的量子动力学计算.将得到的速率常数与实验数据以及其他理论方法进行比较,得出了一些有意义的结论,并与CH4+H→H2+CH3反应在同种理论模型下做了对比,较好的与实验相吻合.最后验证了理论方法以及势能面的正确性.     

Spectroscopic study of B2Σ+–X1 2Π1/2 transition of electron electric dipole moment candidate PbF

PbF, a valuable candidate for measuring the electron electric dipole moment (eEDM), is of great significance in measuring its spectrum and deriving its molecular constants in experiment. In the present work, the rovibronic spectrum of the B$^{2}{\Sigma }^{+}$-X$_{1}^{\, 2}{\Pi }_{1/2}$ transition of PbF in a wavelength range of 260 nm-285 nm is studied by the laser ablation/laser induced fluorescence method. The molecular parameters of the X$_{1}^{\, 2}{\Pi }_{1/2}$ (${v'}=0)$ and B$^{2}{\Sigma }^{+}$ (${v}'=0, 1$) states are derived from the recorded spectra of the (0, 0) and (1, 0) bands of the B$^{2}{\Sigma }^{+}$-X$_{1}^{\, 2}{\Pi }_{1/2}$ transition. Also, the Franck-Condon factors (FCFs) of the transitions between the B$^{2}{\Sigma }^{+}$ and X$_{1}^{\, 2}{\Pi }_{1/2}$ states are calculated by the RKR/LEVEL method and the Morse potential method, respectively.     

A theoretical study of the non-adiabatic charge transfer process Ar2+ (3 P) + He(1 S) → Ar+(2 P) + He+(2 S)

CI calculation with a large basis have been used to calculate the two lowest ³Π adiabatic potential energy curves for the title reaction. These potentials have been transformed to diabatic potentials by employing a recipe based on the CI coefficients. Quantum mechanical close coupling calculations in the diabatic basis have produced total and differential cross sections which are in good agreement with experimental data. Full quantum mechanical and Landau-Zener calculations of the total cross section are in fair agreement with recent experimental measures and by small changes to the diabatic potentials can be brought into essentially exact agreement.     

Internal (SiH)X groups,X = 1–4, in microcrystalline hydrogenated silicon and their IR spectra on the basis of periodic DFT modelling

Vibrational Si–H frequencies were calculated on the basis of density functional theory (DFT) using periodic boundary conditions for N-Si voids, N < 8, in microcrystalline hydrogenated silicon (MHS) and (100), (110), and (111) slabs of 8, 5, and 8 layers, respectively, with the dangling bonds being saturated with hydrogen atoms. The slabs are considered as the models of inter-grain boundaries (IGB) in MHS. The N-Si voids of different shapes have been obtained via random deleting N silicon atoms. It was shown that the high stretching modes (HSM) of Si–H vibrations, which are usually assigned to SiH_X, appear also due to (SiH)_X groups, X = 2–4, in the N-Si voids. No such (SiH)_X groups were formed with X > 1 at the IGB. The low stretching modes (LSM) are thus assigned to Si–H groups presented at both N-Si voids and IGB. Similar relative stability of the voids is obtained with two different DFT approaches, i.e., B3LYP with atomic basis set and Perdew-Burke-Ernzerhof (PBE) with plane wave basis set. This result allows a simple interpretation of usually small I_HSM/(I_LSM + I_HSM) intensity ratio as a consequence of minor concentration of any voids in device quality MHS.     

用变分过渡态理论研究CH3SiH3+H→CH3SiH2+H2反应动力学

用变分过渡态理论对ＣＨ３ＳｉＨ３与Ｈ的抽提取应进行了理论研究;利用从头算计算了反应体系的构型、振动频率和能量等信息;计算了温度在２９８￣１７００Ｋ内反应的速率常数和穿透系数。结果表明,在室温下,变分对于此反应影响较大,隧道效应特别明显,计算得到的速率常数和实验值符合得很好。     

H2SiCl2 中 SiH 伸缩振动的泛频光谱

在2000 ～ 9000 波数 、 12000 ～12900 波数的光谱区间记录了室温下H2SiCl2气体分子的振动泛频光谱，所用的仪器分别是高分辨傅立叶变换光谱仪和高灵敏激光腔内吸收光谱仪。用局域模模型和包含达林－丹尼生共振的简正模模型，归属了SiH伸缩振动的基频和泛频，振动量子数的改变△VSiH=1, 2, 3, 4 and 6。通过对实验能级的非线性拟合，得到SiH伸缩振动的谐振频率ωm、非谐性常数χm、键间耦合系数λ、莫尔斯振子参数 De、α 和相互作用力常数 。实验发现，随着振动能量的增加，振动簇（manifold，两个SiH键的伸缩振动量子数m+n=常数 ）中能量最低的两个能级的间距逐渐减小。当△VSiH≥4时，在实验误差范围内这两个最低的振动态能级简并。这种简并的能级结构类似双原子莫尔斯振子，符合Birge-Sponer 关系。双原子莫尔斯振子直接描述了H2SiCl2分子中SiH 的高泛频伸缩振动，表明在高振动情况下振动能量已经集中到单个SiH键上。     

Monte Carlo simulation of a bimolecular reaction of the type A+(1/2)B 2 → AB — The influence of A-desorption on kinetic phase transitions

The model recently proposed by Ziff et al. [1] for reactions of the type A+(1/2)B ₂ AB is extended in order to study the effect of A-desorption on irreversible (kinetic) phase transitions (IPT). The IPT from a stationary state with AB-production to a B-poisoned state is not influenced by A-desorption. On the other hand, desorption of A-species prevents the existence of a truly A-poinsoned state. Therefore the IPT from the stationary regime to an A-poisoned state does not occur but an apparent phase transition is observed for small values of the desorption probability (P _D). The rate of AB-production (R _AB ) crosses over from a regime where it becomes dominated by the rate of A-adsorption, when the coverage with A-species is negligible to another regime where R _AB is dominated by the rate of B ₂-adsorption, when the coverage with B-species is negligible. Within the former regime, R _AB decays exponentially with the mole fraction of A-molecules in the gas phase and exhibits a power law dependence with P _D (exponent =2).     

Ab initio CI study of the vibrational structure of the 1 1Σ− (1 1 A″)←X and 1 1Δ (2 1 A′, 2 1 A″)←X electronic transitions in HCN and DCN

The results of an ab initio CI study of the vibrational/vibronic structure of the 1 ¹Σ^? (1 ¹ A″)←X and 1 ¹Δ (2 ¹ A′, 2 ¹ A″)←X electronic transitions in HCN and DCN are presented. Calculated band positions and intensity distributions within the band progressions are compared with corresponding experimental data. While the theoretical results for the 1A″←X transition reproduce well the structure of the observed A-X spectrum, they place doubt on the Bickel-Innes interpretation of the B-X band system in terms of transitions to the same excited electronic state but accompanied by excitation of a single quantum of the C?H stretching vibrational mode.     

Silane photoabsorption spectra mear the Si 2p thresholds：the geometry of Si 2p excited SiH4

Based on the multiple-scattering self-consistent-field method, we have studied the photoabsorption spectra near the Si 2p thresholds of silane. According to our calculations, the clear assignments of the inner-shell photoabsorption spectra are provided. In comparison with the high-resolution experimental spectra, the geometric structure of the Si 2p-excited SiH_{4}^{**} is recommended to be of a C_{2v} symmetry. More specifically, the Si 2p-excited SiH_{4}^{**} have two bond lengths of 2.50 a.u. and another two bond lengths of 2.77 a.u., and the corresponding two bond angles are 104.0° and 112.5° respectively.     

The analytical potential energy function of flue gas SO2（X1A1）

The equilibrium structure of flue gas SO2 is optimized using the density functional theory （DFT）/B3P86 method and CC-PV5Z basis. The result shows that it has a bent （C2v, X1A1） ground state structure with an angle of 119.1184°. The vibronic frequencies and the force constants are also calculated. Based on the principles of atomic and molecular reaction statics （AMIIS）, the possible electronic states and reasonable dissociation limits for the ground state of SO2 molecule are determined. The potential functions of SO and 02 are fitted by the modified Murrell-Sorbie＋c6 （M-S＋c6） potential function and the fitted parameters, the force constants and the spectroscopic constants are obtained, which are all close to the experimental values. The analytic potential energy function of the SO2 （X1A1） molecule is derived using the many-body expansion theory. The contour liues are constructed, which show the static properties of SO2 （XIA1）, such as the equilibrium structure, the lowest energies, the most possible reaction channel, etc.