TiN/Al2O3纳米多层膜的共格外延生长及超硬效应

采用多靶磁控溅射法制备了一系列具有不同Al₂O₃调制层厚度的TiN/Al₂O₃纳米多层膜. 利用X射线能量色散谱、X射线衍射、扫描电子显微镜、高分辨透射电子显微镜和微力学探针表征了多层膜的成分、微结构和力学性能. 研究结果表明，在TiN/Al₂O₃纳米多层膜中，单层膜时以非晶态存在的Al₂O₃层在厚度小于1.5 nm时因TiN晶体层的模板效应而晶化，并与TiN层形成共格外延生长，相应地，多层膜产生硬度明显升高的超硬效应，最高硬度可达37.9 GPa. 进一步增加多层膜中Al₂O₃调制层的层厚度，Al₂O₃层逐渐形成非晶结构并破坏了多层膜的共格外延生长，使得多层膜的硬度逐步降低. 关键词： 2O₃纳米多层膜')" href="#">TiN/Al₂O₃纳米多层膜 外延生长 非晶晶化 超硬效应     

Synthesis and characterization of mono-dispersed Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Er<Superscript>3+</Superscript>-coated SiO<Subscript>2</Subscript> nanoparticles by co-precipitation process

In this paper, a facile co-precipitation process for preparing mono-dispersed core–shell structure nanoparticles is reported. The 110 nm SiO₂ cores coated with an yttrium aluminum garnet (Y₃Al₅O₁₂) layer doped with Er³⁺ were synthesized and the influence of the concentration ratio of [urea]/[metal ions] on the final product was investigated. The structure and morphology of samples were characterized by the X-ray powder diffraction, Fourier transform IR spectroscopy and transmission electron microscopy, respectively. The results indicate that a layer of well-crystallized garnet Y₃Al₅O₁₂:Er³⁺ were successfully coated on the silica particles with the thickness of 20 nm. The near infrared and upconversion luminescent spectra of the SiO₂@Y₃Al₅O₁₂:Er³⁺ powders further confirm that a Y₃Al₅O₁₂:Er³⁺ coating layer has formed on the surface of silica spherical particles.     

Co on thin Al2O3 films grown on Ni3Al(1 0 0)

The growth of Co on thin Al₂O₃ layers on Ni₃Al(1 0 0) was investigated by Auger electron spectroscopy, high resolution electron energy loss spectroscopy (EELS), and scanning tunneling microscopy. At 300 K, Co grows in three-dimensional clusters on top of the Al₂O₃ layer. A defect structure of the alumina layer plays a crucial role during the early stage of Co growth. After deposition of 10 Å of Co, a complete screening of the dipoles of the Al₂O₃ layer due to the Co film is found in the EELS measurements. Annealing the Co film reveals a process of coalescence of Co clusters and, above 700 K, diffusion of the Co atoms through the oxide film into the substrate takes place.     

Synthesis and Characterization of Monodispersed SiO2@Y3Al5O12:Er3+ Core-Shell Particles

Submicron core-shell structure particles SiO₂@Y₃Al₅O₁₂:Er³⁺, which silica spherical particles was coated with an yttrium aluminum garnet (Y₃Al₅O₁₂) layer doped with Er³⁺, were prepared by the modified Pechini-Type sol-gel method for the first time. The structure and morphology of samples were detected by the X-ray powder diffraction (XRD) measurement, field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM), respectively. The results indicate that well-crystallized garnet nanocrystallines were formed on the surface of the silica particles. The luminescent spectra in near infrared and visible region of the core-shell structured SiO₂@Y₃Al₅O₁₂:Er³⁺ powders were also investigated and compared with those of the pure Y₃Al₅O₁₂:Er³⁺ and the Er³⁺ doped silicate glass. The results show that mono-dispersed SiO₂@Y₃Al₅O₁₂:Er³⁺ core-shell spherical particles with the near infrared, red and green luminescent emissions under the excitation of 980 nm laser diode have been successfully synthesized.     

Defects in Ce-doped LuAG and YAG scintillation layers grown by liquid phase epitaxy

The single crystalline Lu₃Al₅O₁₂ (LuAG) and Y₃Al₅O₁₂ (YAG) garnet layers doped by Ce³⁺ ions were grown by the liquid phase epitaxy from the flux. The effect of the flux composition, growth conditions, and substrate polishing on the layer morphology, creation of defects, and on optical and emission properties of layers was studied. The defects typical of the epitaxial growth are discussed.     

Surface sensitive spectroscopic study of the interaction of oxygen with Al(111) - low temperature chemisorption and oxidation

The interaction of an atomically clean Al(111) surface with O₂ has been studied using a combination of electron energy loss spectroscopy (EELS) and Auger spectroscopy (AES). Oxygen dissociatively adsorbs and occupies both surface and subsurface binding sites under all exposure conditions in the temperature range 122–700 K. Surface sites are preferentially occupied at low exposures, while higher exposures increasingly favor population of subsurface sites. Studies of O₂ adsorption at temperatures as low as 131 K have shown that formation of Al₂O₃ occurs at high oxygen exposures. The Al₂O₃ produced exhibits a 54 eV Auger transition and a characteristic vibrational spectrum with loss features at 430, 645, and 880 cm⁻¹. Argon ion bombardment of thin monolayer level Al₂O₃ layers leads to preferential loss of Al₂O₃ and a reduction in the subsurface-to-surface oxygen ratio. Electron bombardment of similar, thin Al₂O₃ layers is ineffective in inducing desorption of surface species, whereas thick Al₂O₃ layers are strongly influenced by electron bombardment, as judged from AES behavior. Qualitative models for O₂ adsorption, oxidative annealing, and damage by ion and electron bombardment are given.     

Deposition and characterization of binary Al2O3/SiO2 coating layers on the surfaces of rutile TiO2 and the pigmentary properties

Binary Al₂O₃/SiO₂-coated rutile TiO₂ composites were prepared by a liquid-phase deposition method starting from Na₂SiO₃·9H₂O and NaAlO₂. The chemical structure and morphology of binary Al₂O₃/SiO₂ coating layers were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, TG-DSC, Zeta potential, powder X-ray diffraction, and transmission electron microscopy techniques. Binary Al₂O₃/SiO₂ coating layers both in amorphous phase were formed at TiO₂ surfaces. The silica coating layers were anchored at TiO₂ surfaces via Si-O-Ti bonds and the alumina coating layers were probably anchored at the SiO₂-coated TiO₂ surfaces via Al-O-Si bonds. The formation of continuous and dense binary Al₂O₃/SiO₂ coating layers depended on the pH value of reaction solution and the alumina loading. The binary Al₂O₃/SiO₂-coated TiO₂ composites had a high dispersibility in water. The whiteness and brightness of the binary Al₂O₃/SiO₂-coated TiO₂ composites were higher than those of the naked rutile TiO₂ and the SiO₂-coated TiO₂ samples. The relative light scattering index was found to depend on the composition of coating layers.     

Fluorination of Al2O3 blocking layer for improving the performance of metal‐oxide‐nitride‐oxide‐silicon flash memory

The characteristics of Al₂O₃ film grown by atomic‐layer deposition as blocking layer with and without fluorine plasma treatment were investigated based on a capacitor structure of Al/Al₂O₃/TaON/SiO₂/Si. The physical structure was studied by transmission electron microscopy, and the chemical composition of the blocking layer was analyzed by X‐ray photoelectron spectroscopy and secondary ion mass spectroscopy. Moreover, the surface roughness of the blocking layer was investigated by atomic force microscopy. Compared with a capacitor with Al₂O₃ blocking layer, the one with fluorinated Al₂O₃ displayed higher programming/erasing speeds, better endurance property and better charge retention characteristic because the fluorination could reduce excess oxygen and traps in the blocking layer, thus forming a larger barrier height at the interface between the charge‐trapping layer and the blocking layer. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

X-ray spectral analysis of the interface of a thin Al<Subscript>2</Subscript>O<Subscript>3</Subscript> film prepared on silicon by atomic layer deposition

The extent and phase chemical composition of the interface forming under atomic layer deposition (ALD) of a 6-nm-thick Al₂O₃ film on the surface of crystalline silicon (c-Si) has been studied by depthresolved, ultrasoft x-ray emission spectroscopy. ALD is shown to produce a layer of mixed Al₂O₃ and SiO₂ oxides about 6–8 nm thick, in which silicon dioxide is present even on the sample surface and its concentration increases as one approaches the interface with the substrate. It is assumed that such a complex structure of the layer is the result of interdiffusion of oxygen into the layer and of silicon from the substrate to the surface over grain boundaries of polycrystalline Al₂O₃, followed by silicon oxidation. Neither the formation of clusters of metallic aluminum near the boundary with c-Si nor aluminum diffusion into the substrate was revealed. It was established that ALD-deposited Al₂O₃ layers with a thickness up to 60 nm have similar structure.     

Effect of surface roughness on the development of protective Al2O3 on Fe-10Al (at.%) alloys containing 0-10 at.% Cr

The effect of alloy surface roughness, achieved by different degrees of surface polishing, on the development of protective alumina layer on Fe-10 at.% Al alloys containing 0, 5, and 10 at.% Cr was investigated during oxidation at 1000 °C in 0.1 MPa oxygen. For alloys that are not strong Al₂O₃ formers (Fe-10Al and Fe-5Cr-10Al), the rougher surfaces increased Fe incorporation into the overall surface layer. On the Fe-10Al, more iron oxides were formed in a uniform layer of mixed aluminum- and iron-oxides since the layer was thicker. On the Fe-5Cr-10Al, more iron-rich nodules developed on an otherwise thin Al₂O₃ surface layer. These nodules nucleated preferentially along surface scratch marks but not on alloy grain boundaries. For the strong Al₂O₃-forming Fe-10Cr-10Al alloy, protective alumina surface layers were observed regardless of the surface roughness. These results indicate that the formation of a protective Al₂O₃ layer on Fe-Cr-Al surfaces is not dictated by Al diffusion to the surface. More cold-worked surfaces caused an enhanced Fe diffusion, hence produced more Fe-rich oxides during the early stage of oxidation.     

Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition

We report the permeation barrier properties of Al₂O₃/ZrO₂ multi-layers deposited by remote plasma atomic layer deposition. Electrical Ca degradation tests were performed to derive the water vapor transmission rate (WVTR) of Al₂O₃, ZrO₂ and Al₂O₃/ZrO₂ multi-layers at 50 °C and 50% relative humidity (RH). Al₂O₃/ZrO₂ multi-layers exhibit better barrier properties than Al₂O₃ and ZrO₂ layers, and when more individual layers were deposited in the same total thickness, the WVTR value was reduced further, indicating a better barrier property. The WVTR of the Al₂O₃ and ZrO₂ layers were 9.5 × 10⁻³ and 1.6 × 10⁻² g/m² day, respectively, but when deposited alternatively with 1 cycle of each layer, the WVTR decreased to 9.9 × 10⁻⁴ g/m² day. X-ray diffraction results indicated that ZrO₂ has a monoclinic structure but Al₂O₃ and Al₂O₃/ZrO₂ multi-layers show an amorphous structure. Cross sectional Al₂O₃/ZrO₂ multi-layer structures and the formation of a ZrAl_xO_y phase are observed by transmission electron microscopy (TEM). X-ray photoelectron spectrometry (XPS) results indicate that Al₂O₃ and ZrO₂ contain 33.7% and 37.8%, respectively, Al–OH and Zr–OH bonding. However, the ZrAl_xO_y phase contained 30.5% Al–OH and Zr–OH bonding. The results of transmittance measurement indicate that overall, Al₂O₃, ZrO₂ and Al₂O₃/ZrO₂ multi-layers show high transmittance greater than 80% in the visible region.     

Fabrication of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Al structure by nitric acid oxidation at room temperature

A thick Al₂O₃/aluminum (Al) structure has been fabricated by oxidation of Al with 68wt% and 98wt% nitric acid (HNO₃) aqueous solutions at room temperature. Measurements of the Al₂O₃ thickness vs. the oxidation time show that reaction and diffusion are the rate-determining steps for oxidation with 68wt% and 98wt% HNO₃ solutions, respectively. Observation of transmission electron micrographs shows that the Al₂O₃ layer formed with 68wt% HNO₃ has a structure with cylindrically shaped pores vertically aligned from the Al₂O₃ surface to the Al₂O₃/Al interface. Due to the porous structure, diffusion of HNO₃ proceeds easily, resulting in the reaction-limited oxidation mechanism. In this case, the Al₂O₃/Al structure is considerably rough. The Al₂O₃ layer formed with 98wt% HNO₃ solutions, on the other hand, possesses a denser structure without pores, and the Al₂O₃/Al interface is much smoother, but the thickness of the Al₂O₃ layer formed on crystalline Al regions is much smaller than that on amorphous Al regions. Due to the relatively uniform Al₂O₃ thickness, the leakage current density flowing through the Al₂O₃ layer formed with 68wt% HNO₃ is lower than that formed with 98wt% HNO₃.     

Preparation of the subnanometer thick epitaxial Al2O3(0001) layers on Fe(110) for magnetic tunnel junctions

Growth as well as crystallographic and electronic properties of thin AlO_x layers on Fe(110) were studied by means of low-energy electron diffraction and Auger-electron spectroscopy. Al layers of different thickness were deposited on Fe(110) and successfully oxidized to AlO_x. The step-by-step oxidation of thin Al layers at room temperature leads to the formation of amorphous AlO_x on top of the Fe(110) surface. A subsequent annealing at 250 °C of the oxidized 7-Å thick Al layer results in the formation of a well-ordered Al₂O₃(0001) layer on the Fe(110) surface.     

Fracture and debonding behavior of coated brittle alumina layer on ductile aluminum substrate wire

The fracture and debonding behavior of the Al₂O₃ layer coated on a ductile aluminum substrate wire was studied experimentally and analytically. When tensile strain was applied, the brittle Al₂O₃ coating layer showed multiple cracking perpendicular to the tensile axis. After the multiple cracking, compressive fracture of the Al₂O₃ layer arose in the circumferential direction when the layer was thinner than around 30 μm, while interfacial debonding between the Al₂O₃ layer and aluminum substrate arose when it was thicker. Such a difference in behavior between thin and thick layers could be accounted for by the difference in the layer thickness-dependence of the tensile radial stress at the interface and the compressive hoop stress of the Al₂O₃ layer calculated by the finite element method; the former stress increases while the latter one decreases with increasing layer thickness.     

An investigation into ultra-thin pseudobinary oxide (TiO<Subscript>2</Subscript>)<Subscript>x</Subscript>(Al<Subscript>2</Subscript>O<Subscript>3</Subscript>)<Subscript>1-x</Subscript> films as high-<Emphasis Type="Italic">k</Emphasis> gate dielectrics

As potential gate dielectric materials, pseudobinary oxide (TiO₂)_x(Al₂O₃)_1-x (0.1≤x≤0.6) films (TAO) were deposited on Si (100) substrates by pulsed-laser deposition method and studied systematically via various measurements. By a special deposition process, including two separate steps, the TAO films were deposited in the form of two layers. The first layer was deposited at room temperature and the second layer was completed at the substrate temperature of 400 °C. Detailed data show that the properties of the TAO films are closely related to the ratio between TiO₂ and Al₂O₃. The existence of the first layer deposited at room temperature can effectively restrain the formation of the interfacial layer. And according to the results of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy performed on the films, no other information belonging to the silicon oxide could be observed. For the (TiO₂)_0.4(Al₂O₃)_0.6 film, the best result has been achieved among all samples and its dielectric constant is evaluated to be about 38. It is valuable for the amorphous TAO film as one of the promising dielectric materials for high-k gate dielectric applications. PACS 77.55.+f; 73.40.Qv; 81.15.Fg     

The electrical properties of dielectric stacks of SiO2 and Al2O3 prepared by atomic layer deposition method

We produced dielectric stacks composed of ALD SiO₂ and ALD Al₂O₃, such as SiO₂/Al₂O₃, Al₂O₃/SiO₂, and SiO₂/Al₂O₃/SiO₂, and measured the leakage currents through the stacks in comparison with those of the single oxide layers. SiO₂/Al₂O₃ shows lowest leakage current for negative bias region below 6.4 V, and Al₂O₃/SiO₂ showed highest current under negative biases below 4.5 V. Two distinct electron conduction regimes are observed for Al₂O₃ and SiO₂/Al₂O₃. Poole-Frenkel emission is dominant at the high-voltage regime for both dielectrics, whereas the direct tunneling through the dielectric is dominant at the low-voltage regime. The calculated transition voltage between two regimes for SiO₂ (6.5 nm)/Al₂O₃ (12.6 nm) is −6.4 V, which agrees well with the experimental observation (−6.1 V). For the same EOT of entire dielectric stack, the transition voltage between two regimes decreases with thinner SiO₂ layer.     

Electron transmission through ultra-thin insulating barriers

We propose a model to explain the exponential dependence of the electron transmission coefficient through ultra-thin (4–12 Å average thickness) evaporated films of Al₂O₃. The mechanism involves molecular pinholes in the Al₂O₃ rather than tunneling.     

Corrosion behaviour of sintered NdFeB coated with Al/Al2O3 multilayers by magnetron sputtering

Al/Al₂O₃ multilayers were deposited on sintered NdFeB magnets to improve the corrosion resistance. The amorphous Al₂O₃ films were used to periodically interrupt the columnar growth of the Al layers. The structure of the multilayers was investigated by Scanning Electron Microscopy (SEM) and High Resolution Transmission Electron Microscopy (HRTEM). It was found that the columnar structure was effectively inhibited in the multilayers. Subsequent corrosion testing by potentiodynamic polarization in 3.5 wt.% NaCl and neutral salt spray test (NSS) revealed that the Al/Al₂O₃ multilayers had much better corrosion resistance than the Al single layer. Furthermore, for multilayers with similar thickness, the corrosion resistance was improved as the period decreased.     

Structure of high-T c superconducting tape of the second generation with high current-carrying capacity

Commercial high-T _c superconducting tape produced by Superpower Inc. (the U.S.A.) is studied by scanning and transmission electron microscopy. The superconductor structure is shown to consist of a superconducting layer of average composition GdBa_1.5Cu_2.5–3.0O _y coated by a silver layer and buffer layers of LaMnO₃, MgO,Y₂O₃, and Al₂O₃ deposited on a metallic tape of nickel alloy (Ni-Cr-Mo-Fe-W-Co-Mn). The superconducting layer is formed by the superconducting oxide GdBa₂Cu₃O _y containing lamellar inclusions Gd₂O₃.     

Photon pressure and magnetic moment transfer in multilayered nanosize films

The effect of nanosecond laser pulses with λ = 355 nm on the Kerr and Faraday angles in nanosize layered magnetic films Al₂O₃/TbFe/Al₂O₃/TbFe/Al₂O₃ and Al₂O₃/TbFe/Au/TbFe/Al₂O₃ is studied experimentally. The first ferrimagnetic TbFe layer in these films with transverse anisotropy is enriched by terbium, while the second Tb₂₂Fe₇₈ layer is enriched by iron relative to the composition at the compensation point. When the ferrimagnetic TbFe layers in the film are magnetized in the same direction, the magnetooptical characteristics of each TbFe layers and of the film as a whole depend on the laser radiation power, which is in good agreement with the temperature characteristics. When the TbFe layers are magnetized in opposite directions for a high power of nanosecond pulses, the values of the Faraday and Kerr angles for the output TbFe layer sharply change and even reverse their signs. These results are explained by the effect of electrons with a high spin polarization, which are injected by radiation due to the photon pressure. In the case of antiparallel magnetizations of the TbFe layers, a high concentration of such electrons not only changes the local magnetization of the output layer, but also causes its magnetization reversal due to magnetic moment transfer by such electrons.