Optical properties of Tl2In2Se3S layered single crystals

The optical properties of Tl₂In₂Se₃S layered single crystals have been analyzed using transmission and reflection measurements in the wavelength region between 500 and 1100 nm. The optical indirect transitions with a band gap energy of 1.96 eV and direct transitions with a band gap energy of 2.16 eV were determined from analysis of absorption data at room temperature. Dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-effective-oscillator model. The refractive index dispersion parameters – oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index – were found to be 4.67 eV, 45.35 eV, 1.38 × 10¹⁴ m ^{? 2} and 3.27, respectively. Transmission measurements were also performed in the temperature range 10–300 K. As a result of temperature-dependent transmission measurements, the rate of change in the indirect band gap with temperature, i.e. γ = ?5.6 × 10^?4 eV/K, and the absolute zero value of the band gap energy, E _gi(0) = 2.09 eV, were obtained.     

Giant Rashba spin splitting in Bi2Se3:Tl

First‐principles calculations are employed to demonstrate a giant Rashba spin splitting in Bi₂Se₃:Tl. Biaxial tensile and compressive strain is used to tune the splitting by modifying the potential gradient. The band gap is found to increase under compression and decreases under tension, whereas the dependence of the Rashba spin splitting on the strain is the opposite. Large values of α_R = 1.57 eV Å at the bottom of the conduction band (electrons) and α_R = 3.34 eV Å at the top of the valence band (holes) are obtained without strain. These values can be further enhanced to α_R = 1.83 eV Å and α_R = 3.64 eV Å, respectively, by 2% tensile strain. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

High pressure transport properties of the topological insulator Bi2Se3

We report x-ray diffraction, electrical resistivity, and magnetoresistance measurements on Bi2Se3 under high pressure and low temperature conditions. Pressure induces profound changes in both the room temperature value of the electrical resistivity as well as the temperature dependence of the resistivity. Initially, pressure drives Bi2Se3 toward increasingly insulating behavior and then, at higher pressures, the sample appears to enter a fully metallic state coincident with a change in the crystal structure. Within the low pressure phase, Bi2Se3 exhibits an unusual field dependence of the transverse magnetoresistance Δρ(xx) that is positive at low fields and becomes negative at higher fields. Our results demonstrate that pressures below 8 GPa provide a non-chemical means to controllably reduce the bulk conductivity of Bi2Se3.     

Mo6S6 nanowires: structural, mechanical and electronic properties

The properties of nanowires were investigated with ab initio calculations based on the density-functional theory. The molecules build weakly coupled one-dimensional chains, like and Mo₆S_9-xI_x, and the crystals are strongly uniaxial in their mechanical and electronic properties. The calculated moduli of elasticity and resilience along the chain axis are c₁₁ = 320 GPa and E_R = 0.53 GPa, respectively. The electronic band structure and optical conductivity indicate that the crystals are good quasi-one-dimensional conductors. The frequency-dependent complex dielectric tensor ε, calculated in the random-phase approximation, shows a strong Drude peak in ε_∥, i.e., for the electric field polarised parallel to the chain axis, and several peaks related to interband transitions. The electron energy loss spectrum is weakly anisotropic and has a strong peak at the plasma frequency ħω_p ≈20 eV. The stability analysis shows that is metastable against the formation of the layered .     

Trapping centers and their distribution in Tl2In2Se3S layered single crystals

Thermally stimulated current (TSC) measurements have been carried out on Tl₂In₂Se₃S layered single crystals in the temperature range of 10–175 K. The TSC spectra reveal the presence of two peaks (A and B). The electronic traps’ distributions have been analyzed by different light illumination temperature techniques. It was revealed that the obtained traps’ distribution can be described as an exponential one. The variations of one order of magnitude in the traps’ density for every 30 meV (A peak) and 59 meV (B peak) were estimated. Moreover, the mean activation energy, attempt-to-escape frequency, capture cross section and concentration of the traps were determined.     

Ferroelastic phase transition in elpasolite Tl2KInF6

A new elpasolite Tl₂KInF₆ has been synthesized. This compound undergoes at 228 K a ferroelastic phase transition from a room-temperature Fm3m variety to a monoclinic variety. X-ray, optical, calorimetric and DTA studies under hydrostatic pressure have been performed and compared with other elpasolite-type fluorides.     

在密封和半密封容器内生长Tl2Ba2CaCu2Ox高温超导薄膜的研究

以铝酸镧 (0 0 1)单晶为基片 ,采用两步法在两种密封条件下制备 Tl2 Ba2 Ca Cu2 Ox(Tl- 2 2 12 )高温超导薄膜。首先利用脉冲激光沉积 (PL D)工艺沉积非晶 Ba2 Ca Cu2 Ox 前驱体薄膜 ;然后前驱体薄膜分别在半密封的氧化铝坩埚和密封的高温钢容器内铊化、结晶形成 Tl- 2 2 12薄膜。在两种密封条件下 ,都可以制备出纯相的 Tl- 2 2 12超导薄膜。但是 ,在坩埚内制备的 Tl- 2 2 12薄膜的 TCo和 SEM均明显好于在钢容器中制备的超导薄膜     

Remanent fields and critical currents in Tl2 Ba2Ca2Cu3Ox ceramic

The temperature and magnetic-field dependences of the remanent magnetization have been determined from far-field measurements for thallium ceramic samples. The current flow that gives rise to the observed magnetization is intragranular. The results are consistent with flux-creep-controlled transport with a distance between pinning centers of - 1/2/m. Using near-field measurements, the superconducting properties are found to be heterogeneous on a scale of 1 mm. Magnetic domains have been induced by pplying spatial variation in the applied field.     

Closed tube sublimation growth of Ga2Se2: Solid-vapour equilibria and mass transport2

A detailed study of the real conditions of Ga₂Se₂ growth by sublimation in a closed tube system is presented. Mass flow measurements have been carried out as a function of the cross-section of the silica tubes, the thermal gradient along the growth chamber, and the sublimation temperature. With the aid of the results of pressure measurements, flow rates as a function of growth parameters have been evaluated according to diffusion theory, and compared with experimental flow rates. Useful information about the thermodynamic functions ΔH and ΔS of Ga₂Se₂ has thus been obtained.     

205Tl NMR observation of vortex lattice formation in the high temperature superconductor Tl2Ba2CuO6

We report on the asymmetric field distribution of the triangular vortex lattice in the superconductor Tl₂Ba₂CuO₆ as observed by²⁰⁵Tl NMR atB _a =4.26 T. A penetration depth of =1700±100 Å is obtained.     

Angular dependence of the upper critical field in Bi2Sr2CuO6+δ

The angular dependence of the upper critical magnetic field was investigated in a wide range of temperatures in very high-quality Bi₂Sr₂CuO_6+δ single crystals with critical temperature T _c (midpoint) ? 9 K in magnetic fields up to 28 T. Although the typical value of the normal state resistivity ratio ρ_c/ρ_ab≈10⁴, the anisotropy ratio H _c2∥ab/H _c2⊥ab of the upper critical fields is much smaller and shows an unexpected temperature dependence. A model based on strong anisotropy and small transparency between superconducting layers is proposed.     

Thermoelectric properties in Mn-doped Bi2Se3

Using n-type and p-type Mn-doped Bi₂Se₃ single crystals, a thin-film-type thermoelectric (TE) module was fabricated and the TE characteristics were investigated. The Seebeck coefficient at room temperature was about 100 μV K⁻¹ with different sign for both materials. From the Seebeck coefficient and resistivity values, the electric power of our TE module was evaluated to be 90 μW for a single couple at the temperature difference of 10 K. This value is compared to that (∼21 μW) of commercialized TE device. Nevertheless, the actual power was measured to be quite small around 0.74 μW, which is much higher than other homemade TE power level. This small power is attributed to the high electrical contact resistance between the TE material and the heat source and sink. Assuming the contact resistance level ∼0.1 Ω similar to that of commercialized TE devices, the electric power should be about 41 μW, which is almost 2 times higher than that in commercialized TE devices. These results propose that the Mn-doped Bi₂Se₃ system is another promising TE material, which can be replaced with the commercialized Bi₂Te₃ system.     

Electric field gradient and atomic position for Se in MoSe2

Hyperfine Interactions - We have measured the nuclear quadrupole interaction at 77Se in the layer compound semiconductor MoSe2 by γ–γ PAC in the decay of 77Br following...     

A special triple point in non-centrosymmetric materials Zn3In2Se6 and In2Se3

We predict that the non-centrosymmetric materials Zn₃In₂Se₆ and In₂Se₃ are the symmetry protected topological critical triple point metals based on first principles calculation. The dispersion along the Γ-Z line almost vanishes because of the particular crystal structure, and the strain along the c direction maybe drives accidental Dirac point to triple point. An effective theory is developed to describe accidental Dirac points and triple points, by which we calculate the surface states. These materials provide us a new platform to discuss the relation between the triple points and Dirac points.